Cho S - Search Results

1

Synaptic plasticity and non-volatile memory characteristics in TiN-nanocrystal-embedded 3D vertical memristor-based synapses for neuromorphic systems.

Yang S, Kim T, Kim S, Chung D, Kim TH, Lee JK, Kim S, Ismail M, Mahata C, Kim S, Cho S. Yang S, et al. Among authors: cho s. Nanoscale. 2023 Aug 17;15(32):13239-13251. doi: 10.1039/d3nr01930f. Nanoscale. 2023. PMID: 37525621

2

Nano-cone resistive memory for ultralow power operation.

Kim S, Jung S, Kim MH, Kim TH, Bang S, Cho S, Park BG. Kim S, et al. Among authors: cho s. Nanotechnology. 2017 Mar 24;28(12):125207. doi: 10.1088/1361-6528/aa5e72. Epub 2017 Feb 23. Nanotechnology. 2017. PMID: 28229954

3

Scaling Effect on Silicon Nitride Memristor with Highly Doped Si Substrate.

Kim S, Jung S, Kim MH, Chen YC, Chang YF, Ryoo KC, Cho S, Lee JH, Park BG. Kim S, et al. Among authors: cho s. Small. 2018 May;14(19):e1704062. doi: 10.1002/smll.201704062. Epub 2018 Apr 17. Small. 2018. PMID: 29665257

4

Analytically and empirically consistent characterization of the resistive switching mechanism in a Ag conducting-bridge random-access memory device through a pseudo-liquid interpretation approach.

Choi YJ, Bang S, Kim TH, Hong K, Kim S, Kim S, Cho S, Park BG. Choi YJ, et al. Among authors: cho s. Phys Chem Chem Phys. 2021 Dec 15;23(48):27234-27243. doi: 10.1039/d1cp04637c. Phys Chem Chem Phys. 2021. PMID: 34853837

5

Medium-Temperature-Oxidized GeO_x Resistive-Switching Random-Access Memory and Its Applicability in Processing-in-Memory Computing.

Udaya Mohanan K, Cho S, Park BG. Udaya Mohanan K, et al. Among authors: cho s. Nanoscale Res Lett. 2022 Jul 5;17(1):63. doi: 10.1186/s11671-022-03701-8. Nanoscale Res Lett. 2022. PMID: 35789299 Free PMC article.

6

Short-Term Memory Characteristics of IGZO-Based Three-Terminal Devices.

Pyo J, Bae JH, Kim S, Cho S. Pyo J, et al. Among authors: cho s. Materials (Basel). 2023 Feb 1;16(3):1249. doi: 10.3390/ma16031249. Materials (Basel). 2023. PMID: 36770256 Free PMC article.

7

The Enhanced Performance of Neuromorphic Computing Hardware in an ITO/ZnO/HfO_x/W Bilayer-Structured Memory Device.

Noh M, Ju D, Cho S, Kim S. Noh M, et al. Among authors: cho s. Nanomaterials (Basel). 2023 Oct 28;13(21):2856. doi: 10.3390/nano13212856. Nanomaterials (Basel). 2023. PMID: 37947701 Free PMC article.

8

Analog Memory and Synaptic Plasticity in an InGaZnO-Based Memristor by Modifying Intrinsic Oxygen Vacancies.

Mahata C, So H, Kim S, Kim S, Cho S. Mahata C, et al. Among authors: cho s. Materials (Basel). 2023 Dec 5;16(24):7510. doi: 10.3390/ma16247510. Materials (Basel). 2023. PMID: 38138652 Free PMC article.

9

Improvement of volatile switching in scaled silicon nanofin memristor for high performance and efficient reservoir computing.

Ju D, Lee J, Kim S, Cho S. Ju D, et al. Among authors: cho s. J Chem Phys. 2024 Jul 7;161(1):014709. doi: 10.1063/5.0218677. J Chem Phys. 2024. PMID: 38953444

10

InGaN/GaN light-emitting diode having direct hole injection plugs and its high-current operation.

Kim S, Cho S, Jeong J, Kim S, Hwang S, Kim G, Yoon S, Park BG. Kim S, et al. Among authors: cho s. Opt Express. 2017 Mar 20;25(6):6440-6449. doi: 10.1364/OE.25.006440. Opt Express. 2017. PMID: 28380994 Free article.

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