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Probing charge traps at the 2D semiconductor/dielectric interface.
Nanoscale. 2023 Nov 2;15(42):16818-16835. doi: 10.1039/d3nr03453d.
Nanoscale. 2023.
PMID: 37842965
Review.
Nanoironing van der Waals Heterostructures toward Electrically Controlled Quantum Dots.
Talha-Dean T, Tarn Y, Mukherjee S, John JW, Huang D, Verzhbitskiy IA, Venkatakrishnarao D, Das S, Lee R, Mishra A, Wang S, Ang YS, Johnson Goh KE, Lau CS.
Talha-Dean T, et al. Among authors: john jw.
ACS Appl Mater Interfaces. 2024 Jun 19;16(24):31738-31746. doi: 10.1021/acsami.4c03639. Epub 2024 Jun 6.
ACS Appl Mater Interfaces. 2024.
PMID: 38843175
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Room-temperature infrared photoluminescence and broadband photodetection characteristics of Ge/GeSi islands on silicon-on-insulator.
Singh S, John JW, Sarkar A, Dhyani V, Das S, Ray SK.
Singh S, et al. Among authors: john jw.
Nanotechnology. 2024 Oct 17. doi: 10.1088/1361-6528/ad87fb. Online ahead of print.
Nanotechnology. 2024.
PMID: 39419071
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Successful kinetic impact into an asteroid for planetary defence.
Daly RT, Ernst CM, Barnouin OS, Chabot NL, Rivkin AS, Cheng AF, Adams EY, Agrusa HF, Abel ED, Alford AL, Asphaug EI, Atchison JA, Badger AR, Baki P, Ballouz RL, Bekker DL, Bellerose J, Bhaskaran S, Buratti BJ, Cambioni S, Chen MH, Chesley SR, Chiu G, Collins GS, Cox MW, DeCoster ME, Ericksen PS, Espiritu RC, Faber AS, Farnham TL, Ferrari F, Fletcher ZJ, Gaskell RW, Graninger DM, Haque MA, Harrington-Duff PA, Hefter S, Herreros I, Hirabayashi M, Huang PM, Hsieh SW, Jacobson SA, Jenkins SN, Jensenius MA, John JW, Jutzi M, Kohout T, Krueger TO, Laipert FE, Lopez NR, Luther R, Lucchetti A, Mages DM, Marchi S, Martin AC, McQuaide ME, Michel P, Moskovitz NA, Murphy IW, Murdoch N, Naidu SP, Nair H, Nolan MC, Ormö J, Pajola M, Palmer EE, Peachey JM, Pravec P, Raducan SD, Ramesh KT, Ramirez JR, Reynolds EL, Richman JE, Robin CQ, Rodriguez LM, Roufberg LM, Rush BP, Sawyer CA, Scheeres DJ, Scheirich P, Schwartz SR, Shannon MP, Shapiro BN, Shearer CE, Smith EJ, Steele RJ, Steckloff JK, Stickle AM, Sunshine JM, Superfin EA, Tarzi ZB, Thomas CA, Thomas JR, Trigo-Rodríguez JM, Tropf BT, Vaughan AT, Velez D, Waller CD, Wilson DS, Wortman KA, Zhang Y.
Daly RT, et al. Among authors: john jw.
Nature. 2023 Apr;616(7957):443-447. doi: 10.1038/s41586-023-05810-5. Epub 2023 Mar 1.
Nature. 2023.
PMID: 36858073
Free PMC article.
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Self-powered, low-noise and high-speed nanolayered MoSe2/p-GaN heterojunction photodetector from ultraviolet to near-infrared wavelengths.
Sandhu HK, John JW, Jakhar A, Sharma A, Jain A, Das S.
Sandhu HK, et al. Among authors: john jw.
Nanotechnology. 2022 May 4;33(30). doi: 10.1088/1361-6528/ac6817.
Nanotechnology. 2022.
PMID: 35439737
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Low-noise, high-detectivity, polarization-sensitive, room-temperature infrared photodetectors based on Ge quantum dot-decorated Si-on-insulator nanowire field-effect transistors.
John JW, Dhyani V, Singh S, Jakhar A, Sarkar A, Das S, Ray SK.
John JW, et al.
Nanotechnology. 2021 May 10;32(31). doi: 10.1088/1361-6528/abf6f0.
Nanotechnology. 2021.
PMID: 33845466
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Broadband infrared photodetector based on nanostructured MoSe2-Si heterojunction extended up to 2.5 μm spectral range.
John JW, Dhyani V, Maity S, Mukherjee S, Ray SK, Kumar V, Das S.
John JW, et al.
Nanotechnology. 2020 Nov 6;31(45):455208. doi: 10.1088/1361-6528/ab95b9. Epub 2020 May 22.
Nanotechnology. 2020.
PMID: 32442984
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