Fan Z - Search Results

1

Regulating the orientation of a single coordinate bond by the synergistic action of mechanical forces and electric field.

Zhang W, Zhao Z, Tan M, Adijiang A, Zhong S, Xu X, Zhao T, Ramya E, Sun L, Zhao X, Fan Z, Xiang D. Zhang W, et al. Among authors: fan z. Chem Sci. 2023 Oct 2;14(41):11456-11465. doi: 10.1039/d3sc03892k. eCollection 2023 Oct 25. Chem Sci. 2023. PMID: 37886107 Free PMC article.

2

Anisotropic thermoelectric properties in hydrogenated nitrogen-doped porous graphene nanosheets.

Yu X, Liu JH, Zhou WX, Xie ZX, Jia PZ, Deng YX, Cao XH, Fan ZQ, Wu D. Yu X, et al. Phys Chem Chem Phys. 2023 Jul 19;25(28):19082-19090. doi: 10.1039/d3cp01403g. Phys Chem Chem Phys. 2023. PMID: 37427572

3

Geometry, induced magnetism and modified electronic behaviors for magnetic atom adsorption on antimonene nanotubes.

He X, Fan ZQ, Zhang ZH. He X, et al. Among authors: fan zq. Phys Chem Chem Phys. 2020 Oct 28;22(41):23665-23677. doi: 10.1039/d0cp04346j. Phys Chem Chem Phys. 2020. PMID: 33112338

4

Ab initio performance predictions of single-layer In-V tunnel field-effect transistors.

Lu J, Fan ZQ, Gong J, Jiang XW. Lu J, et al. Phys Chem Chem Phys. 2017 Aug 2;19(30):20121-20126. doi: 10.1039/c7cp02695a. Phys Chem Chem Phys. 2017. PMID: 28726966

5

The high magnetoresistance performance of epitaxial half-metallic CrO₂-based magnetic junctions.

Zhang Z, Cheng M, Fan Z, Liu Y, Wang D, Wang K, Xiong R, Lu Z. Zhang Z, et al. Among authors: fan z. Phys Chem Chem Phys. 2023 Jan 18;25(3):1848-1857. doi: 10.1039/d2cp05015c. Phys Chem Chem Phys. 2023. PMID: 36602084

6

Enhancement of tunneling current in phosphorene tunnel field effect transistors by surface defects.

Lu J , Fan ZQ , Gong J , Chen JZ , ManduLa H , Zhang YY , Yang SY , Jiang XW . Lu J , et al. Phys Chem Chem Phys. 2018 Feb 21;20(8):5699-5707. doi: 10.1039/c7cp08678d. Phys Chem Chem Phys. 2018. PMID: 29410993

7

Tunnable rectifying performance of in-plane metal-semiconductor junctions based on passivated zigzag phosphorene nanoribbons.

Su S, Gong J, Fan ZQ. Su S, et al. RSC Adv. 2018 Sep 5;8(55):31255-31260. doi: 10.1039/c8ra05691a. eCollection 2018 Sep 5. RSC Adv. 2018. PMID: 35548223 Free PMC article.

8

High-performance 5.1 nm in-plane Janus WSeTe Schottky barrier field effect transistors.

Fan ZQ , Zhang ZH , Yang SY . Fan ZQ , et al. Nanoscale. 2020 Nov 5;12(42):21750-21756. doi: 10.1039/d0nr05269h. Nanoscale. 2020. PMID: 33094782

9

Edge contact dependent spin transport for n-type doping zigzag-graphene with asymmetric edge hydrogenation.

Deng X, Zhang Z, Tang G, Fan Z, Zhu H, Yang C. Deng X, et al. Among authors: fan z. Sci Rep. 2014 Feb 10;4:4038. doi: 10.1038/srep04038. Sci Rep. 2014. PMID: 24509476 Free PMC article.

10

Improving Performances of In-Plane Transition-Metal Dichalcogenide Schottky Barrier Field-Effect Transistors.

Fan ZQ, Jiang XW, Chen J, Luo JW. Fan ZQ, et al. ACS Appl Mater Interfaces. 2018 Jun 6;10(22):19271-19277. doi: 10.1021/acsami.8b04860. Epub 2018 May 22. ACS Appl Mater Interfaces. 2018. PMID: 29737827

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