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Large Memory Window of van der Waals Heterostructure Devices Based on MOCVD-Grown 2D Layered Ge4 Se9.
Noh G, Song H, Choi H, Kim M, Jeong JH, Lee Y, Choi MY, Oh S, Jo MK, Woo DY, Jo Y, Park E, Moon E, Kim TS, Chai HJ, Huh W, Lee CH, Kim CJ, Yang H, Song S, Jeong HY, Kim YS, Lee GH, Lim J, Kim CG, Chung TM, Kwak JY, Kang K. Noh G, et al. Among authors: kim ts, kim cg, kim cj, kim m, kim ys. Adv Mater. 2022 Oct;34(41):e2204982. doi: 10.1002/adma.202204982. Epub 2022 Sep 9. Adv Mater. 2022. PMID: 36000232
Cation Composition-Dependent Device Performance and Positive Bias Instability of Self-Aligned Oxide Semiconductor Thin-Film Transistors: Including Oxygen and Hydrogen Effect.
Jang JT, Kim D, Baeck JH, Bae JU, Noh J, Lee SW, Park KS, Kim JJ, Yoon SY, Kim C, Kim YS, Oh S, Kim DH. Jang JT, et al. Among authors: kim jj, kim dh, kim d, kim c, kim ys. ACS Appl Mater Interfaces. 2022 Jan 12;14(1):1389-1396. doi: 10.1021/acsami.1c18890. Epub 2022 Jan 3. ACS Appl Mater Interfaces. 2022. PMID: 34978416
Tailoring Vacancies Far Beyond Intrinsic Levels Changes the Carrier Type and Optical Response in Monolayer MoSe2-x Crystals.
Mahjouri-Samani M, Liang L, Oyedele A, Kim YS, Tian M, Cross N, Wang K, Lin MW, Boulesbaa A, Rouleau CM, Puretzky AA, Xiao K, Yoon M, Eres G, Duscher G, Sumpter BG, Geohegan DB. Mahjouri-Samani M, et al. Among authors: kim ys. Nano Lett. 2016 Aug 10;16(8):5213-20. doi: 10.1021/acs.nanolett.6b02263. Epub 2016 Jul 18. Nano Lett. 2016. PMID: 27416103
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