Huang R - Search Results

1

Film before aggregates: an operando GISAXS study on electrochemically assisted surfactant assembly.

Moehl GE, Fitch SD, Cicvarić K, Han Y, Huang R, Rawle J, Shao L, Beanland R, Bartlett PN, Denuault G, Hector AL. Moehl GE, et al. Among authors: huang r. Nanoscale. 2024 Feb 22;16(8):4197-4204. doi: 10.1039/d3nr05126a. Nanoscale. 2024. PMID: 38324330

2

Area Selective Growth of Titanium Diselenide Thin Films into Micropatterned Substrates by Low-Pressure Chemical Vapor Deposition.

Benjamin SL, de Groot CH, Gurnani C, Hector AL, Huang R, Ignatyev K, Levason W, Pearce SJ, Thomas F, Reid G. Benjamin SL, et al. Among authors: huang r. Chem Mater. 2013 Dec 10;25(23):4719-4724. doi: 10.1021/cm402422e. Epub 2013 Nov 5. Chem Mater. 2013. PMID: 24489437 Free PMC article.

3

Phase-Change Memory Properties of Electrodeposited Ge-Sb-Te Thin Film.

Huang R, Kissling GP, Jolleys A, Bartlett PN, Hector AL, Levason W, Reid G, De Groot CH. Huang R, et al. Nanoscale Res Lett. 2015 Dec;10(1):432. doi: 10.1186/s11671-015-1136-4. Epub 2015 Nov 2. Nanoscale Res Lett. 2015. PMID: 26525703 Free PMC article.

4

Nanoscale arrays of antimony telluride single crystals by selective chemical vapor deposition.

Huang R, Benjamin SL, Gurnani C, Wang Y, Hector AL, Levason W, Reid G, De Groot CH. Huang R, et al. Sci Rep. 2016 Jun 10;6:27593. doi: 10.1038/srep27593. Sci Rep. 2016. PMID: 27283116 Free PMC article.

5

Compliance-Free ZrO₂/ZrO_2 - x /ZrO₂ Resistive Memory with Controllable Interfacial Multistate Switching Behaviour.

Huang R, Yan X, Ye S, Kashtiban R, Beanland R, Morgan KA, Charlton MDB, de Groot CHK. Huang R, et al. Nanoscale Res Lett. 2017 Dec;12(1):384. doi: 10.1186/s11671-017-2155-0. Epub 2017 Jun 2. Nanoscale Res Lett. 2017. PMID: 28582965 Free PMC article.

6

Towards a 3D GeSbTe phase change memory with integrated selector by non-aqueous electrodeposition.

Huang R, Kissling GP, Kashtiban R, Noori YJ, Cicvarić K, Zhang W, Hector AL, Beanland R, Smith DC, Reid G, Bartlett PN, de Groot CHK. Huang R, et al. Faraday Discuss. 2019 Feb 18;213(0):339-355. doi: 10.1039/c8fd00126j. Faraday Discuss. 2019. PMID: 30411749

7

[Ge(TeⁿBu)₄] - a single source precursor for the chemical vapour deposition of germanium telluride thin films.

Hawken SL , Huang R , de Groot CHK , Hector AL , Jura M , Levason W , Reid G , Stenning GBG . Hawken SL , et al. Among authors: huang r. Dalton Trans. 2018 Dec 18;48(1):117-124. doi: 10.1039/c8dt03263g. Dalton Trans. 2018. PMID: 30468211

8

Thioether complexes of WSCl₄, WOCl₄ and WSCl₃ and evaluation of thiochloride complexes as CVD precursors for WS₂ thin films.

Smith DE, Greenacre VK, Hector AL, Huang R, Levason W, Reid G, Robinson F, Thomas S. Smith DE, et al. Among authors: huang r. Dalton Trans. 2020 Feb 25;49(8):2496-2504. doi: 10.1039/d0dt00068j. Dalton Trans. 2020. PMID: 32022094

9

Thermoelectric Properties of Bismuth Telluride Thin Films Electrodeposited from a Nonaqueous Solution.

Cicvarić K, Meng L, Newbrook DW, Huang R, Ye S, Zhang W, Hector AL, Reid G, Bartlett PN, de Groot CHK. Cicvarić K, et al. Among authors: huang r. ACS Omega. 2020 Jun 11;5(24):14679-14688. doi: 10.1021/acsomega.0c01284. eCollection 2020 Jun 23. ACS Omega. 2020. PMID: 32596605 Free PMC article.

10

Low temperature CVD of thermoelectric SnTe thin films from the single source precursor, [ⁿBu₃Sn(TeⁿBu)].

Robinson F, Newbrook DW, Curran P, de Groot CHK, Hardie D, Hector AL, Huang R, Reid G. Robinson F, et al. Among authors: huang r. Dalton Trans. 2021 Jan 27;50(3):998-1006. doi: 10.1039/d0dt03760e. Dalton Trans. 2021. PMID: 33355323

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