Liang F - Search Results

1

The Influence Mechanism of Quantum Well Growth and Annealing Temperature on In Migration and Stress Modulation Behavior.

Yan L, Liang F, Yang J, Chen P, Jiang D, Zhao D. Yan L, et al. Among authors: liang f. Nanomaterials (Basel). 2024 Apr 18;14(8):703. doi: 10.3390/nano14080703. Nanomaterials (Basel). 2024. PMID: 38668197 Free PMC article.

2

Carbon-Related Defects as a Source for the Enhancement of Yellow Luminescence of Unintentionally Doped GaN.

Liang F, Zhao D, Jiang D, Liu Z, Zhu J, Chen P, Yang J, Liu S, Xing Y, Zhang L, Li M, Zhang Y, Du G. Liang F, et al. Nanomaterials (Basel). 2018 Sep 19;8(9):744. doi: 10.3390/nano8090744. Nanomaterials (Basel). 2018. PMID: 30235861 Free PMC article.

3

Role of Si and C Impurities in Yellow and Blue Luminescence of Unintentionally and Si-Doped GaN.

Liang F, Zhao D, Jiang D, Liu Z, Zhu J, Chen P, Yang J, Liu S, Xing Y, Zhang L. Liang F, et al. Nanomaterials (Basel). 2018 Dec 10;8(12):1026. doi: 10.3390/nano8121026. Nanomaterials (Basel). 2018. PMID: 30544659 Free PMC article.

4

Anomalous Temperature Dependence of Photoluminescence Caused by Non-Equilibrium Distributed Carriers in InGaN/(In)GaN Multiple Quantum Wells.

Ben Y, Liang F, Zhao D, Wang X, Yang J, Liu Z, Chen P. Ben Y, et al. Among authors: liang f. Nanomaterials (Basel). 2021 Apr 16;11(4):1023. doi: 10.3390/nano11041023. Nanomaterials (Basel). 2021. PMID: 33923643 Free PMC article.

5

Improving Output Efficiency of InGaN-Based MQW Green Laser Diodes by Modulating Indium Content of Quantum Barriers and Using Composite Lower Waveguide Layers.

Chen Z, Liang F, Zhao D, Yang J, Chen P, Jiang D. Chen Z, et al. Among authors: liang f. Nanomaterials (Basel). 2022 Jul 27;12(15):2581. doi: 10.3390/nano12152581. Nanomaterials (Basel). 2022. PMID: 35957010 Free PMC article.

6

Effect of Hydrogen Treatment on Photoluminescence and Morphology of InGaN Multiple Quantum Wells.

Wang Y, Liang F, Zhao D, Ben Y, Yang J, Liu Z, Chen P. Wang Y, et al. Among authors: liang f. Nanomaterials (Basel). 2022 Sep 8;12(18):3114. doi: 10.3390/nano12183114. Nanomaterials (Basel). 2022. PMID: 36144901 Free PMC article.

7

Role of Vacancy Defects in Reducing the Responsivity of AlGaN Schottky Barrier Ultraviolet Detectors.

Huang Y, Yang J, Zhao D, Zhang Y, Liu Z, Liang F, Chen P. Huang Y, et al. Among authors: liang f. Nanomaterials (Basel). 2022 Sep 11;12(18):3148. doi: 10.3390/nano12183148. Nanomaterials (Basel). 2022. PMID: 36144936 Free PMC article.

8

Theoretical Optical Output Power Improvement of InGaN-Based Violet Laser Diode Using AlGaN/GaN Composite Last Quantum Barrier.

Zhang Z, Yang J, Zhao D, Liang F, Chen P, Liu Z. Zhang Z, et al. Among authors: liang f. Nanomaterials (Basel). 2022 Nov 12;12(22):3990. doi: 10.3390/nano12223990. Nanomaterials (Basel). 2022. PMID: 36432275 Free PMC article.

9

A Study on the Increase of Leakage Current in AlGaN Detectors with Increasing Al Composition.

Huang Y, Yang J, Zhao D, Zhang Y, Liu Z, Liang F, Chen P. Huang Y, et al. Among authors: liang f. Nanomaterials (Basel). 2023 Jan 28;13(3):525. doi: 10.3390/nano13030525. Nanomaterials (Basel). 2023. PMID: 36770485 Free PMC article.

10

Carrier Redistribution Between Two Kinds of Localized States in the InGaN/GaN Quantum Wells Studied by Photoluminescence.

Xing Y, Zhao D, Jiang D, Liu Z, Zhu J, Chen P, Yang J, Liang F, Liu S, Zhang L. Xing Y, et al. Among authors: liang f. Nanoscale Res Lett. 2019 Mar 12;14(1):88. doi: 10.1186/s11671-019-2919-9. Nanoscale Res Lett. 2019. PMID: 30874975 Free PMC article.

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