Gong J - Search Results

1

Distinguishing the Charge Trapping Centers in CaF₂-Based 2D Material MOSFETs.

Zhao Z, Xiong T, Gong J, Liu YY. Zhao Z, et al. Among authors: gong j. Nanomaterials (Basel). 2024 Jun 16;14(12):1038. doi: 10.3390/nano14121038. Nanomaterials (Basel). 2024. PMID: 38921914 Free PMC article.

2

Simulation of a Steep-Slope p- and n-Type HfS₂/MoTe₂ Field-Effect Transistor with the Hybrid Transport Mechanism.

Lyu J, Gong J. Lyu J, et al. Among authors: gong j. Nanomaterials (Basel). 2023 Feb 7;13(4):649. doi: 10.3390/nano13040649. Nanomaterials (Basel). 2023. PMID: 36839017 Free PMC article.

3

First-Principles Prediction of High and Low Resistance States in Ta/h-BN/Ta Atomristor.

He L, Lang S, Zhang W, Song S, Lyu J, Gong J. He L, et al. Among authors: gong j. Nanomaterials (Basel). 2024 Mar 30;14(7):612. doi: 10.3390/nano14070612. Nanomaterials (Basel). 2024. PMID: 38607146 Free PMC article.

4

Improving the Performance of Arsenene Nanoribbon Gate-All-Around Tunnel Field-Effect Transistors Using H Defects.

Song S, Qin L, Wang Z, Lyu J, Gong J, Yang S. Song S, et al. Among authors: gong j. Nanomaterials (Basel). 2024 Dec 6;14(23):1960. doi: 10.3390/nano14231960. Nanomaterials (Basel). 2024. PMID: 39683348 Free PMC article.

5

Improving performance of monolayer arsenene tunnel field-effect transistors by defects.

Song S, Gong J, Wen H, Yang S. Song S, et al. Among authors: gong j. Nanoscale Adv. 2022 Jun 17;4(14):3023-3032. doi: 10.1039/d2na00093h. eCollection 2022 Jul 15. Nanoscale Adv. 2022. PMID: 36133511 Free PMC article.

6

A New Opportunity for 2D van der Waals Heterostructures: Making Steep-Slope Transistors.

Lyu J, Pei J, Guo Y, Gong J, Li H. Lyu J, et al. Among authors: gong j. Adv Mater. 2020 Jan;32(2):e1906000. doi: 10.1002/adma.201906000. Epub 2019 Nov 28. Adv Mater. 2020. PMID: 31777983

7

Influence of the interface structure and strain on the rectification performance of lateral MoS₂/graphene heterostructure devices.

Song S, Gong J, Jiang X, Yang S. Song S, et al. Among authors: gong j. Phys Chem Chem Phys. 2022 Jan 26;24(4):2265-2274. doi: 10.1039/d1cp04502d. Phys Chem Chem Phys. 2022. PMID: 35014641

8

Room-temperature ferromagnetism, half-metallicity and spin transport in monolayer CrSc₂Te₄-based magnetic tunnel junction devices.

Yue R, Su X, Lv X, Zhang B, Su S, Li H, Guo S, Gong J. Yue R, et al. Among authors: gong j. Phys Chem Chem Phys. 2024 Jul 17;26(28):19207-19216. doi: 10.1039/d4cp01660b. Phys Chem Chem Phys. 2024. PMID: 38957083

9

Impact of uniaxial strain on the electronic and transport properties of monolayer α-GeTe.

Yan S, Gong J. Yan S, et al. Among authors: gong j. Nanotechnology. 2020 Oct 30;31(44):445706. doi: 10.1088/1361-6528/aba5b9. Epub 2020 Jul 14. Nanotechnology. 2020. PMID: 32663807

10

Ab initio performance predictions of single-layer In-V tunnel field-effect transistors.

Lu J, Fan ZQ, Gong J, Jiang XW. Lu J, et al. Among authors: gong j. Phys Chem Chem Phys. 2017 Aug 2;19(30):20121-20126. doi: 10.1039/c7cp02695a. Phys Chem Chem Phys. 2017. PMID: 28726966

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