Perlin P - Search Results

1

Hydrostatic Pressure as a Tool for the Study of Semiconductor Properties-An Example of III-V Nitrides.

Gorczyca I, Suski T, Perlin P, Grzegory I, Kaminska A, Staszczak G. Gorczyca I, et al. Among authors: perlin p. Materials (Basel). 2024 Aug 13;17(16):4022. doi: 10.3390/ma17164022. Materials (Basel). 2024. PMID: 39203200 Free PMC article. Review.

2

450 nm (Al,In)GaN optical amplifier with double 'j-shape' waveguide for master oscillator power amplifier systems.

Stanczyk S, Kafar A, Grzanka S, Sarzynski M, Mroczynski R, Najda S, Suski T, Perlin P. Stanczyk S, et al. Among authors: perlin p. Opt Express. 2018 Mar 19;26(6):7351-7357. doi: 10.1364/OE.26.007351. Opt Express. 2018. PMID: 29609291 Free article.

3

Visible light communications using a directly modulated 422 nm GaN laser diode.

Watson S, Tan M, Najda SP, Perlin P, Leszczynski M, Targowski G, Grzanka S, Kelly AE. Watson S, et al. Among authors: perlin p. Opt Lett. 2013 Oct 1;38(19):3792-4. doi: 10.1364/OL.38.003792. Opt Lett. 2013. PMID: 24081054

4

Pressure studies of gallium nitride: Crystal growth and fundamental electronic properties.

Perlin P, Gorczyca I I, Christensen NE, Grzegory I I, Teisseyre H, Suski T. Perlin P, et al. Phys Rev B Condens Matter. 1992 Jun 15;45(23):13307-13313. doi: 10.1103/physrevb.45.13307. Phys Rev B Condens Matter. 1992. PMID: 10001412 No abstract available.

5

Raman-scattering studies of aluminum nitride at high pressure.

Perlin P, Polian A, Suski T. Perlin P, et al. Phys Rev B Condens Matter. 1993 Feb 1;47(5):2874-2877. doi: 10.1103/physrevb.47.2874. Phys Rev B Condens Matter. 1993. PMID: 10006350 No abstract available.

6

Kinetics of the radiative and nonradiative recombination in polar and semipolar InGaN quantum wells.

Marona L, Schiavon D, Baranowski M, Kudrawiec R, Gorczyca I, Kafar A, Perlin P. Marona L, et al. Among authors: perlin p. Sci Rep. 2020 Jan 27;10(1):1235. doi: 10.1038/s41598-020-58295-x. Sci Rep. 2020. PMID: 31988430 Free PMC article.

7

Effects of MOVPE Growth Conditions on GaN Layers Doped with Germanium.

Schiavon D, Litwin-Staszewska E, Jakieła R, Grzanka S, Perlin P. Schiavon D, et al. Among authors: perlin p. Materials (Basel). 2021 Jan 13;14(2):354. doi: 10.3390/ma14020354. Materials (Basel). 2021. PMID: 33450822 Free PMC article.

8

Refractive Index of Heavily Germanium-Doped Gallium Nitride Measured by Spectral Reflectometry and Ellipsometry.

Schiavon D, Mroczyński R, Kafar A, Kamler G, Levchenko I, Najda S, Perlin P. Schiavon D, et al. Among authors: perlin p. Materials (Basel). 2021 Nov 30;14(23):7364. doi: 10.3390/ma14237364. Materials (Basel). 2021. PMID: 34885522 Free PMC article.

9

Palladium-Based Contacts on p-GaN and Their Application in Laser Diodes.

Levchenko I, Kryvyi S, Kamińska E, Grzanka S, Grzanka E, Marona Ł, Perlin P. Levchenko I, et al. Among authors: perlin p. Materials (Basel). 2023 Oct 6;16(19):6568. doi: 10.3390/ma16196568. Materials (Basel). 2023. PMID: 37834705 Free PMC article.

10

Polarization-Doped InGaN LEDs and Laser Diodes for Broad Temperature Range Operation.

Aktas M, Grzanka S, Marona Ł, Goss J, Staszczak G, Kafar A, Perlin P. Aktas M, et al. Among authors: perlin p. Materials (Basel). 2024 Sep 13;17(18):4502. doi: 10.3390/ma17184502. Materials (Basel). 2024. PMID: 39336243 Free PMC article.

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