Lin HC - Search Results

1

Transport diagrams of germanium double quantum dots/Si barriers using photocurrent measurement.

Wang IH, Chiu YW, Lin HC, Li PW. Wang IH, et al. Among authors: lin hc. Sci Rep. 2024 Sep 5;14(1):20749. doi: 10.1038/s41598-024-71177-w. Sci Rep. 2024. PMID: 39237567 Free PMC article.

2

High Photoresponsivity Ge-dot PhotoMOSFETs for Low-power Monolithically-Integrated Si Optical Interconnects.

Kuo MH, Lee MC, Lin HC, George T, Li PW. Kuo MH, et al. Among authors: lin hc. Sci Rep. 2017 Mar 16;7:44402. doi: 10.1038/srep44402. Sci Rep. 2017. PMID: 28300145 Free PMC article.

3

Tunable diameter and spacing of double Ge quantum dots using highly-controllable spacers and selective oxidation of SiGe.

Huang TL, Peng KP, Chen CL, Lin HC, George T, Li PW. Huang TL, et al. Among authors: lin hc. Sci Rep. 2019 Aug 5;9(1):11303. doi: 10.1038/s41598-019-47806-0. Sci Rep. 2019. PMID: 31383902 Free PMC article.

4

Determination of exciton binding energy using photocurrent spectroscopy of Ge quantum-dot single-hole transistors under CW pumping.

Hong PY, Lai CC, Tsai T, Lin HC, George T, Kuo DMT, Li PW. Hong PY, et al. Among authors: lin hc. Sci Rep. 2023 Aug 31;13(1):14333. doi: 10.1038/s41598-023-41582-8. Sci Rep. 2023. PMID: 37653007 Free PMC article.

5

Germanium Quantum-Dot Array with Self-Aligned Electrodes for Quantum Electronic Devices.

Wang IH, Hong PY, Peng KP, Lin HC, George T, Li PW. Wang IH, et al. Among authors: lin hc. Nanomaterials (Basel). 2021 Oct 16;11(10):2743. doi: 10.3390/nano11102743. Nanomaterials (Basel). 2021. PMID: 34685184 Free PMC article.

6

Ge nanodot-mediated densification and crystallization of low-pressure chemical vapor deposited Si₃N₄ for advanced complementary metal-oxide-semiconductor photonics and electronics applications.

Peng KP, Huang TL, George T, Lin HC, Li PW. Peng KP, et al. Among authors: lin hc. Nanotechnology. 2019 Oct 4;30(40):405201. doi: 10.1088/1361-6528/ab2d4a. Epub 2019 Jun 27. Nanotechnology. 2019. PMID: 31247602

7

Very large photoresponsiviy and high photocurrent linearity for Ge-dot/SiO₂/SiGe photoMOSFETs under gate modulation.

Kuo MH, Hong PY, Liu PC, Lee MC, Lin HC, George T, Li PW. Kuo MH, et al. Among authors: lin hc. Opt Express. 2017 Oct 16;25(21):25467-25476. doi: 10.1364/OE.25.025467. Opt Express. 2017. PMID: 29041213 Free article.

8

Single-fabrication-step Ge nanosphere/SiO₂/SiGe heterostructures: a key enabler for realizing Ge MOS devices.

Liao PH, Peng KP, Lin HC, George T, Li PW. Liao PH, et al. Among authors: lin hc. Nanotechnology. 2018 May 18;29(20):205601. doi: 10.1088/1361-6528/aab17b. Epub 2018 Feb 22. Nanotechnology. 2018. PMID: 29469060

9

A study on low temperature transport properties of independent double-gated poly-Si nanowire transistors.

Chen WC, Lin HC, Lin ZM, Hsu CT, Huang TY. Chen WC, et al. Among authors: lin zm, lin hc. Nanotechnology. 2010 Oct 29;21(43):435201. doi: 10.1088/0957-4484/21/43/435201. Epub 2010 Sep 29. Nanotechnology. 2010. PMID: 20876976

10

Room-Temperature Fabrication of p-Type SnO Semiconductors Using Ion-Beam-Assisted Deposition.

Januar M, Prakoso SP, Zhong CW, Lin HC, Li C, Hsieh JH, Liu KK, Liu KC. Januar M, et al. Among authors: lin hc. ACS Appl Mater Interfaces. 2022 Oct 19;14(41):46726-46737. doi: 10.1021/acsami.2c12617. Epub 2022 Oct 6. ACS Appl Mater Interfaces. 2022. PMID: 36203276

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