High drain field impact ionization transistors as ideal switches.
Yuan B, Chen Z, Chen Y, Tang C, Chen W, Cheng Z, Zhao C, Hou Z, Zhang Q, Gan W, Gao J, Wang J, Xu J, Hu G, Wu Z, Luo K, Luo M, Zhang Y, Zhang Z, Xiong S, Cong C, Bao W, Ma S, Wan J, Zhou P, Lu Y.
Yuan B, et al. Among authors: bao w.
Nat Commun. 2024 Oct 19;15(1):9038. doi: 10.1038/s41467-024-53337-8.
Nat Commun. 2024.
PMID: 39426951
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