Hwang CS - Search Results

1

Fabrication of Ultrathin Ferroelectric Al_0.7Sc_0.3N Films under Complementary-Metal-Oxide-Semiconductor Compatible Conditions by using HfN_0.4 Electrode.

Ryoo SK, Kim KD, Choi W, Sriboriboon P, Heo S, Seo H, Jang YH, Jeon JW, Yeom MK, Lee SH, Park HS, Kim Y, Hwang CS. Ryoo SK, et al. Among authors: hwang cs. Adv Mater. 2025 Jan;37(1):e2413295. doi: 10.1002/adma.202413295. Epub 2024 Nov 13. Adv Mater. 2025. PMID: 39535445

2

Ferroelectricity and antiferroelectricity of doped thin HfO2-based films.

Park MH, Lee YH, Kim HJ, Kim YJ, Moon T, Kim KD, Müller J, Kersch A, Schroeder U, Mikolajick T, Hwang CS. Park MH, et al. Among authors: hwang cs. Adv Mater. 2015 Mar 18;27(11):1811-31. doi: 10.1002/adma.201404531. Epub 2015 Feb 11. Adv Mater. 2015. PMID: 25677113

3

Efficient CH3 NH3 PbI3 Perovskite Solar Cells Employing Nanostructured p-Type NiO Electrode Formed by a Pulsed Laser Deposition.

Park JH, Seo J, Park S, Shin SS, Kim YC, Jeon NJ, Shin HW, Ahn TK, Noh JH, Yoon SC, Hwang CS, Seok SI. Park JH, et al. Among authors: hwang cs. Adv Mater. 2015 Jul 15;27(27):4013-9. doi: 10.1002/adma.201500523. Epub 2015 Jun 2. Adv Mater. 2015. PMID: 26038099

4

Matrix Mapping on Crossbar Memory Arrays with Resistive Interconnects and Its Use in In-Memory Compression of Biosignals.

Lee YK, Jeon JW, Park ES, Yoo C, Kim W, Ha M, Hwang CS. Lee YK, et al. Among authors: hwang cs. Micromachines (Basel). 2019 May 7;10(5):306. doi: 10.3390/mi10050306. Micromachines (Basel). 2019. PMID: 31067708 Free PMC article.

5

Modeling of Negative Capacitance in Ferroelectric Thin Films.

Park HW, Roh J, Lee YB, Hwang CS. Park HW, et al. Among authors: hwang cs. Adv Mater. 2019 Aug;31(32):e1805266. doi: 10.1002/adma.201805266. Epub 2019 Jun 5. Adv Mater. 2019. PMID: 31165533 Review.

6

Electroforming-Free Bipolar Resistive Switching in GeSe Thin Films with a Ti-Containing Electrode.

Kim W, Yoo C, Park ES, Ha M, Jeon JW, Kim GS, Woo KS, Lee YK, Hwang CS. Kim W, et al. Among authors: hwang cs. ACS Appl Mater Interfaces. 2019 Oct 23;11(42):38910-38920. doi: 10.1021/acsami.9b10891. Epub 2019 Oct 9. ACS Appl Mater Interfaces. 2019. PMID: 31550128

7

Atomic Layer Deposition of Ge_xSe_1-x Thin Films for Endurable Ovonic Threshold Selectors with a Low Threshold Voltage.

Yoo C, Kim W, Jeon JW, Park ES, Ha M, Lee YK, Hwang CS. Yoo C, et al. Among authors: hwang cs. ACS Appl Mater Interfaces. 2020 May 20;12(20):23110-23118. doi: 10.1021/acsami.0c03747. Epub 2020 May 7. ACS Appl Mater Interfaces. 2020. PMID: 32345012

8

Polarizing and depolarizing charge injection through a thin dielectric layer in a ferroelectric-dielectric bilayer.

Park HW, Hyun SD, Lee IS, Lee SH, Lee YB, Oh M, Kim BY, Ryoo SG, Hwang CS. Park HW, et al. Among authors: hwang cs. Nanoscale. 2021 Feb 4;13(4):2556-2572. doi: 10.1039/d0nr07597c. Nanoscale. 2021. PMID: 33476352

9

Improved Properties of the Atomic Layer Deposited Ru Electrode for Dynamic Random-Access Memory Capacitor Using Discrete Feeding Method.

Kwon DS, Jeon W, Kim DG, Kim TK, Seo H, Lim J, Hwang CS. Kwon DS, et al. Among authors: hwang cs. ACS Appl Mater Interfaces. 2021 May 26;13(20):23915-23927. doi: 10.1021/acsami.1c03795. Epub 2021 May 16. ACS Appl Mater Interfaces. 2021. PMID: 33998226

10

Time-varying data processing with nonvolatile memristor-based temporal kernel.

Jang YH, Kim W, Kim J, Woo KS, Lee HJ, Jeon JW, Shim SK, Han J, Hwang CS. Jang YH, et al. Among authors: hwang cs. Nat Commun. 2021 Sep 30;12(1):5727. doi: 10.1038/s41467-021-25925-5. Nat Commun. 2021. PMID: 34593800 Free PMC article.

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