Bae JH - Search Results

1

Charge-trap synaptic device with polycrystalline silicon channel for low power in-memory computing.

Park MK, Hwang J, Kim S, Shin W, Shim W, Bae JH, Lee JH, Cho S. Park MK, et al. Among authors: bae jh. Sci Rep. 2024 Nov 23;14(1):29089. doi: 10.1038/s41598-024-80272-x. Sci Rep. 2024. PMID: 39580504 Free PMC article.

2

Implementation of Synaptic Device Using Various High-k Gate Dielectric Stacks.

Seo YT, Park MK, Bae JH, Park BG, Lee JH. Seo YT, et al. Among authors: bae jh. J Nanosci Nanotechnol. 2020 Jul 1;20(7):4292-4297. doi: 10.1166/jnn.2020.17788. J Nanosci Nanotechnol. 2020. PMID: 31968460

3

Reconfigurable neuromorphic computing block through integration of flash synapse arrays and super-steep neurons.

Kwon D, Woo SY, Lee KH, Hwang J, Kim H, Park SH, Shin W, Bae JH, Kim JJ, Lee JH. Kwon D, et al. Among authors: bae jh. Sci Adv. 2023 Jul 21;9(29):eadg9123. doi: 10.1126/sciadv.adg9123. Epub 2023 Jul 19. Sci Adv. 2023. PMID: 37467329 Free PMC article.

4

On-Chip Annealing Using Embedded Micro-Heater for Highly Sensitive and Selective Gas Detection.

Park J, Shin H, Jung G, Hong S, Park MK, Hwang J, Bae JH, Kim JJ, Lee JH. Park J, et al. Among authors: bae jh. Adv Sci (Weinh). 2024 Jul;11(28):e2401821. doi: 10.1002/advs.202401821. Epub 2024 May 13. Adv Sci (Weinh). 2024. PMID: 38738755 Free PMC article.

5

A Split-Gate Positive Feedback Device With an Integrate-and-Fire Capability for a High-Density Low-Power Neuron Circuit.

Choi KB, Woo SY, Kang WM, Lee S, Kim CH, Bae JH, Lim S, Lee JH. Choi KB, et al. Among authors: bae jh. Front Neurosci. 2018 Oct 9;12:704. doi: 10.3389/fnins.2018.00704. eCollection 2018. Front Neurosci. 2018. PMID: 30356702 Free PMC article.

6

Gated Schottky Diode-Type Synaptic Device with a Field-Plate Structure to Reduce the Forward Current.

Bae JH, Lim S, Kwon D, Lee ST, Kim H, Lee JH. Bae JH, et al. J Nanosci Nanotechnol. 2019 Oct 1;19(10):6135-6138. doi: 10.1166/jnn.2019.17003. J Nanosci Nanotechnol. 2019. PMID: 31026923

7

Pruning for Hardware-Based Deep Spiking Neural Networks Using Gated Schottky Diode as Synaptic Devices.

Lee ST, Lim S, Bae JH, Kwon D, Kim HS, Park BG, Lee JH. Lee ST, et al. Among authors: bae jh. J Nanosci Nanotechnol. 2020 Nov 1;20(11):6603-6608. doi: 10.1166/jnn.2020.18772. J Nanosci Nanotechnol. 2020. PMID: 32604482

8

Comprehensive and accurate analysis of the working principle in ferroelectric tunnel junctions using low-frequency noise spectroscopy.

Shin W, Min KK, Bae JH, Yim J, Kwon D, Kim Y, Yu J, Hwang J, Park BG, Kwon D, Lee JH. Shin W, et al. Among authors: bae jh. Nanoscale. 2022 Feb 10;14(6):2177-2185. doi: 10.1039/d1nr06525d. Nanoscale. 2022. PMID: 34989737

9

Effect of Word-Line Bias on Linearity of Multi-Level Conductance Steps for Multi-Layer Neural Networks Based on NAND Flash Cells.

Lee ST, Lim S, Choi N, Bae JH, Kwon D, Kim HS, Park BG, Lee JH. Lee ST, et al. Among authors: bae jh. J Nanosci Nanotechnol. 2020 Jul 1;20(7):4138-4142. doi: 10.1166/jnn.2020.17791. J Nanosci Nanotechnol. 2020. PMID: 31968431

10

Short-Term Memory Characteristics of IGZO-Based Three-Terminal Devices.

Pyo J, Bae JH, Kim S, Cho S. Pyo J, et al. Among authors: bae jh. Materials (Basel). 2023 Feb 1;16(3):1249. doi: 10.3390/ma16031249. Materials (Basel). 2023. PMID: 36770256 Free PMC article.

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