Zhao Y - Search Results

1

Stacking selected polarization switching and phase transition in vdW ferroelectric α-In₂Se₃ junction devices.

Wu Y, Zhang T, Guo D, Li B, Pei K, You W, Du Y, Xing W, Lai Y, Ji W, Zhao Y, Che R. Wu Y, et al. Among authors: zhao y. Nat Commun. 2024 Dec 2;15(1):10481. doi: 10.1038/s41467-024-54841-7. Nat Commun. 2024. PMID: 39622832 Free PMC article.

2

A "Click" Reaction to Engineer MoS₂ Field-Effect Transistors with Low Contact Resistance.

Miao J, Wu L, Bian Z, Zhu Q, Zhang T, Pan X, Hu J, Xu W, Wang Y, Xu Y, Yu B, Ji W, Zhang X, Qiao J, Samorì P, Zhao Y. Miao J, et al. Among authors: zhao y. ACS Nano. 2022 Dec 27;16(12):20647-20655. doi: 10.1021/acsnano.2c07670. Epub 2022 Dec 1. ACS Nano. 2022. PMID: 36455073

3

A Plasmonic Optoelectronic Resistive Random-Access Memory for In-Sensor Color Image Cryptography.

Yang Q, Kang Y, Zhang C, Chen H, Zhang T, Bian Z, Su X, Xu W, Sun J, Wang P, Xu Y, Yu B, Zhao Y. Yang Q, et al. Among authors: zhao y. Adv Sci (Weinh). 2024 Aug;11(29):e2403043. doi: 10.1002/advs.202403043. Epub 2024 May 29. Adv Sci (Weinh). 2024. PMID: 38810136 Free PMC article.

4

Carrier Modulation in 2D Transistors by Inserting Interfacial Dielectric Layer for Area-Efficient Computation.

Bian Z, Miao J, Zhang T, Chen H, Zhu Q, Chai J, Tian F, Wu S, Xu Y, Yu B, Chai Y, Zhao Y. Bian Z, et al. Among authors: zhao y. Small. 2023 Jun;19(26):e2206791. doi: 10.1002/smll.202206791. Epub 2023 Apr 3. Small. 2023. PMID: 37010037

5

Boosting the electronic and catalytic properties of 2D semiconductors with supramolecular 2D hydrogen-bonded superlattices.

Wang C, Furlan de Oliveira R, Jiang K, Zhao Y, Turetta N, Ma C, Han B, Zhang H, Tranca D, Zhuang X, Chi L, Ciesielski A, Samorì P. Wang C, et al. Among authors: zhao y. Nat Commun. 2022 Jan 26;13(1):510. doi: 10.1038/s41467-022-28116-y. Nat Commun. 2022. PMID: 35082288 Free PMC article.

6

Introduction of defects in hexagonal boron nitride for vacancy-based 2D memristors.

Chen H, Kang Y, Pu D, Tian M, Wan N, Xu Y, Yu B, Jie W, Zhao Y. Chen H, et al. Among authors: zhao y. Nanoscale. 2023 Mar 2;15(9):4309-4316. doi: 10.1039/d2nr07234c. Nanoscale. 2023. PMID: 36756937

7

Recent Progress in Contact Engineering of Field-Effect Transistor Based on Two-Dimensional Materials.

Miao J, Zhang X, Tian Y, Zhao Y. Miao J, et al. Among authors: zhao y. Nanomaterials (Basel). 2022 Oct 31;12(21):3845. doi: 10.3390/nano12213845. Nanomaterials (Basel). 2022. PMID: 36364620 Free PMC article. Review.

8

All-2D-Materials Subthreshold-Free Field-Effect Transistor with Near-Ideal Switching Slope.

Hu J, Li H, Chen A, Zhang Y, Wang H, Fu Y, Zhou X, Loh KP, Kang Y, Chai J, Wang C, Zhou J, Miao J, Zhao Y, Zhong S, Zhao R, Liu K, Xu Y, Yu B. Hu J, et al. Among authors: zhao y, zhao r. ACS Nano. 2024 Jul 29. doi: 10.1021/acsnano.4c03856. Online ahead of print. ACS Nano. 2024. PMID: 39073870

9

Reconfigurable Neuromorphic Computing with 2D Material Heterostructures for Versatile Neural Information Processing.

Hu J, Li H, Zhang Y, Zhou J, Zhao Y, Xu Y, Yu B. Hu J, et al. Among authors: zhao y. Nano Lett. 2024 Jul 31;24(30):9391-9398. doi: 10.1021/acs.nanolett.4c02658. Epub 2024 Jul 22. Nano Lett. 2024. PMID: 39038296

10

Current crowding in graphene-silicon schottky diodes.

Anwar MA, Ali M, Bodepudi SC, Malik M, Pu D, Zhu X, Pan X, Shehzad K, Imran A, Zhao Y, Dong S, Hu H, Yu B, Xu Y. Anwar MA, et al. Among authors: zhao y. Nanotechnology. 2023 May 9;34(29). doi: 10.1088/1361-6528/acce41. Nanotechnology. 2023. PMID: 37075709

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