Boltzmann Switching MoS2 Metal-Semiconductor Field-Effect Transistors Enabled by Monolithic-Oxide-Gapped Metal Gates at the Schottky-Mott Limit.
Kim YH, Jiang W, Lee D, Moon D, Choi HY, Shin JC, Jeong Y, Kim JC, Lee J, Huh W, Han CY, So JP, Kim TS, Kim SB, Koo HC, Wang G, Kang K, Park HG, Jeong HY, Im S, Lee GH, Low T, Lee CH.
Kim YH, et al. Among authors: kim ts, kim sb, kim jc.
Adv Mater. 2024 Jul;36(29):e2314274. doi: 10.1002/adma.202314274. Epub 2024 May 1.
Adv Mater. 2024.
PMID: 38647521