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Author Correction: Epitaxial growth of high-quality GaN with a high growth rate at low temperatures by radical-enhanced metalorganic chemical vapor deposition.

Dhasiyan AK, Amalraj FW, Jayaprasad S, Shimizu N, Oda O, Ishikawa K, Hori M. Dhasiyan AK, et al. Sci Rep. 2024 Dec 20;14(1):30575. doi: 10.1038/s41598-024-82619-w. Sci Rep. 2024. PMID: 39706881 Free PMC article. No abstract available.

Epitaxial growth of high-quality GaN with a high growth rate at low temperatures by radical-enhanced metalorganic chemical vapor deposition.

Dhasiyan AK, Amalraj FW, Jayaprasad S, Shimizu N, Oda O, Ishikawa K, Hori M. Dhasiyan AK, et al. Sci Rep. 2024 May 13;14(1):10861. doi: 10.1038/s41598-024-61501-9. Sci Rep. 2024. PMID: 38740895 Free PMC article.

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