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Damage-Free Atomic Layer Etch of WSe2: A Platform for Fabricating Clean Two-Dimensional Devices.
Nipane A, Choi MS, Sebastian PJ, Yao K, Borah A, Deshmukh P, Jung Y, Kim B, Rajendran A, Kwock KWC, Zangiabadi A, Menon VM, Schuck PJ, Yoo WJ, Hone J, Teherani JT. Nipane A, et al. Among authors: teherani jt. ACS Appl Mater Interfaces. 2021 Jan 13;13(1):1930-1942. doi: 10.1021/acsami.0c18390. Epub 2020 Dec 22. ACS Appl Mater Interfaces. 2021. PMID: 33351577
Absence of a Band Gap at the Interface of a Metal and Highly Doped Monolayer MoS2.
Kerelsky A, Nipane A, Edelberg D, Wang D, Zhou X, Motmaendadgar A, Gao H, Xie S, Kang K, Park J, Teherani J, Pasupathy A. Kerelsky A, et al. Among authors: teherani j. Nano Lett. 2017 Oct 11;17(10):5962-5968. doi: 10.1021/acs.nanolett.7b01986. Epub 2017 Sep 20. Nano Lett. 2017. PMID: 28920701
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