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Carrier localization of as-grown n-type gallium nitride under large hydrostatic pressure.
Phys Rev B Condens Matter. 1996 Jan 15;53(3):1322-1326. doi: 10.1103/physrevb.53.1322.
Phys Rev B Condens Matter. 1996.
PMID: 9983591
No abstract available.
Towards the identification of the dominant donor in GaN.
Perlin P, Suski T, Teisseyre H, Leszczynski M, Grzegory I I, Jun J, Porowski S, Boguslawski P, Bernholc J, Chervin JC, Polian A, Moustakas TD.
Perlin P, et al. Among authors: grzegory i i.
Phys Rev Lett. 1995 Jul 10;75(2):296-299. doi: 10.1103/PhysRevLett.75.296.
Phys Rev Lett. 1995.
PMID: 10059658
No abstract available.
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Pressure studies of gallium nitride: Crystal growth and fundamental electronic properties.
Perlin P, Gorczyca I I, Christensen NE, Grzegory I I, Teisseyre H, Suski T.
Perlin P, et al. Among authors: grzegory i i.
Phys Rev B Condens Matter. 1992 Jun 15;45(23):13307-13313. doi: 10.1103/physrevb.45.13307.
Phys Rev B Condens Matter. 1992.
PMID: 10001412
No abstract available.
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Raman scattering and x-ray-absorption spectroscopy in gallium nitride under high pressure.
Perlin P, Jauberthie-Carillon C, Itie JP, San Miguel A, Grzegory I I, Polian A.
Perlin P, et al. Among authors: grzegory i i.
Phys Rev B Condens Matter. 1992 Jan 1;45(1):83-89. doi: 10.1103/physrevb.45.83.
Phys Rev B Condens Matter. 1992.
PMID: 10000155
No abstract available.
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