Haller EE - Search Results

1

Carrier localization of as-grown n-type gallium nitride under large hydrostatic pressure.

Wetzel C, Walukiewicz W, Haller EE, Ager J 3rd, Grzegory I I, Porowski S, Suski T. Wetzel C, et al. Among authors: haller ee. Phys Rev B Condens Matter. 1996 Jan 15;53(3):1322-1326. doi: 10.1103/physrevb.53.1322. Phys Rev B Condens Matter. 1996. PMID: 9983591 No abstract available.

2

Critical criterion for axial models of defects in as-grown n-type GaAs.

Nolte DD, Walukiewicz W, Haller EE. Nolte DD, et al. Among authors: haller ee. Phys Rev B Condens Matter. 1987 Dec 15;36(17):9374-9377. doi: 10.1103/physrevb.36.9374. Phys Rev B Condens Matter. 1987. PMID: 9942824 No abstract available.

3

Deep-level defects in silicon and the band-edge hydrostatic deformation potentials.

Nolte DD, Walukiewicz W, Haller EE. Nolte DD, et al. Among authors: haller ee. Phys Rev B Condens Matter. 1987 Dec 15;36(17):9392-9394. doi: 10.1103/physrevb.36.9392. Phys Rev B Condens Matter. 1987. PMID: 9942829 No abstract available.

4

Hydrogen passivation of Se and Te in AlSb.

McCluskey MD, Haller EE, Walukiewicz W, Becla P. McCluskey MD, et al. Among authors: haller ee. Phys Rev B Condens Matter. 1996 Jun 15;53(24):16297-16301. doi: 10.1103/physrevb.53.16297. Phys Rev B Condens Matter. 1996. PMID: 9983466 No abstract available.

5

Comment on volume relaxation around defects in silicon upon electron emission.

Nolte DD, Walukiewicz W, Haller EE. Nolte DD, et al. Among authors: haller ee. Phys Rev B Condens Matter. 1988 Sep 15;38(9):6316-6317. doi: 10.1103/physrevb.38.6316. Phys Rev B Condens Matter. 1988. PMID: 9947100 No abstract available.

6

Band-edge hydrostatic deformation potentials in III-V semiconductors.

Nolte DD, Walukiewicz W, Haller EE. Nolte DD, et al. Among authors: haller ee. Phys Rev Lett. 1987 Jul 27;59(4):501-504. doi: 10.1103/PhysRevLett.59.501. Phys Rev Lett. 1987. PMID: 10035785 No abstract available.

7

Formation of a DX center in InP under hydrostatic pressure.

Wolk JA, Walukiewicz W, Thewalt ML, Haller EE. Wolk JA, et al. Among authors: haller ee. Phys Rev Lett. 1992 Jun 15;68(24):3619-3622. doi: 10.1103/PhysRevLett.68.3619. Phys Rev Lett. 1992. PMID: 10045750 No abstract available.

8

Dependence of transition-metal impurity levels on host composition in III-V semiconductors.

Hamera M, Walukiewicz W, Nolte DD, Haller EE. Hamera M, et al. Among authors: haller ee. Phys Rev B Condens Matter. 1989 May 15;39(14):10114-10119. doi: 10.1103/physrevb.39.10114. Phys Rev B Condens Matter. 1989. PMID: 9947790 No abstract available.

9

Neutral-impurity scattering in isotopically engineered Ge.

Itoh KM, Walukiewicz W, Fuchs HD, Beeman JW, Haller EE, Farmer JW, Ozhogin VI VI. Itoh KM, et al. Among authors: haller ee. Phys Rev B Condens Matter. 1994 Dec 15;50(23):16995-17000. doi: 10.1103/physrevb.50.16995. Phys Rev B Condens Matter. 1994. PMID: 9976095 No abstract available.

10

Evidence for correlated hole distribution in neutron-transmutation-doped isotopically controlled germanium.

Itoh KM, Muto J, Walukiewicz W, Beeman JW, Haller EE, Kim H, Mayur AJ, Sciacca MD, Ramdas AK, Buczko R, Farmer JW, Ozhogin VI VI. Itoh KM, et al. Among authors: haller ee. Phys Rev B Condens Matter. 1996 Mar 15;53(12):7797-7804. doi: 10.1103/physrevb.53.7797. Phys Rev B Condens Matter. 1996. PMID: 9982226 No abstract available.

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