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Ti Alloyed α-Ga2O3: Route towards Wide Band Gap Engineering.
Micromachines (Basel). 2020 Dec 20;11(12):1128. doi: 10.3390/mi11121128.
Micromachines (Basel). 2020.
PMID: 33419277
Free PMC article.
Impact of alloy fluctuations and Coulomb effects on the electronic and optical properties of c-plane GaN/AlGaN quantum wells.
Roble AA, Patra SK, Massabuau F, Frentrup M, Leontiadou MA, Dawson P, Kappers MJ, Oliver RA, Graham DM, Schulz S.
Roble AA, et al.
Sci Rep. 2019 Dec 11;9(1):18862. doi: 10.1038/s41598-019-53693-2.
Sci Rep. 2019.
PMID: 31827118
Free PMC article.
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Characterisation of InGaN by Photoconductive Atomic Force Microscopy.
Weatherley TFK, Massabuau FC, Kappers MJ, Oliver RA.
Weatherley TFK, et al.
Materials (Basel). 2018 Sep 21;11(10):1794. doi: 10.3390/ma11101794.
Materials (Basel). 2018.
PMID: 30248899
Free PMC article.
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