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Acceleration of electromagnetic shower development and enhancement of light yield in oriented scintillating crystals
Authors:
Mattia Soldani,
Pietro Monti-Guarnieri,
Alessia Selmi,
Nicola Argiolas,
Luca Bomben,
Claudia Brizzolari,
Nicola Canale,
Stefano Carsi,
Nikolaos Charitonidis,
Davide De Salvador,
Vincenzo Guidi,
Viktar Haurylavets,
Mikhail Korzhik,
Giulia Lezzani,
Alexander Lobko,
Lorenzo Malagutti,
Sofia Mangiacavalli,
Valerio Mascagna,
Andrea Mazzolari,
Vitaly Mechinsky,
Matthew Moulson,
Riccardo Negrello,
Gianfranco Paternò,
Leonardo Perna,
Christian Petroselli
, et al. (9 additional authors not shown)
Abstract:
We observed a substantial increase of the scintillation light output of lead tungstate (PbWO$_4$) at a small incidence angle with respect to two main lattice axes. This reflects the acceleration of electromagnetic shower development that occurs in the crystalline Strong Field. We measured the scintillation light generated by $120$-$\mathrm{GeV}$ electrons and $10$-$100$-$\mathrm{GeV}$ $γ$ rays on…
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We observed a substantial increase of the scintillation light output of lead tungstate (PbWO$_4$) at a small incidence angle with respect to two main lattice axes. This reflects the acceleration of electromagnetic shower development that occurs in the crystalline Strong Field. We measured the scintillation light generated by $120$-$\mathrm{GeV}$ electrons and $10$-$100$-$\mathrm{GeV}$ $γ$ rays on thick samples. This result deepens the knowledge of the shower development mechanisms in crystal scintillators and could pave the way to the development of innovative accelerator- and space-borne calorimeters.
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Submitted 18 April, 2024;
originally announced April 2024.
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Strong reduction of the effective radiation length in an axially oriented scintillator crystal
Authors:
L. Bandiera,
V. V. Tikhomirov,
M. Romagnoni,
N. Argiolas,
E. Bagli,
G. Ballerini,
A. Berra,
C. Brizzolari,
R. Camattari,
D. De Salvador,
V. Haurylavets,
V. Mascagna,
A. Mazzolari,
M. Prest,
M. Soldani,
A. Sytov,
E. Vallazza
Abstract:
We measured a considerable increase of the emitted radiation by 120 GeV/c electrons in an axially oriented lead tungstate scintillator crystal, if compared to the case in which the sample was not aligned with the beam direction. This enhancement resulted from the interaction of particles with the strong crystalline electromagnetic field. The data collected at the external lines of CERN SPS were cr…
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We measured a considerable increase of the emitted radiation by 120 GeV/c electrons in an axially oriented lead tungstate scintillator crystal, if compared to the case in which the sample was not aligned with the beam direction. This enhancement resulted from the interaction of particles with the strong crystalline electromagnetic field. The data collected at the external lines of CERN SPS were critically compared to Monte Carlo simulations based on the Baier Katkov quasiclassical method, highlighting a reduction of the scintillator radiation length by a factor of five in case of beam alignment with the [001] crystal axes. The observed effect opens the way to the realization of compact electromagnetic calorimeters/detectors based on oriented scintillator crystals in which the amount of material can be strongly reduced with respect to the state of the art. These devices could have relevant applications in fixed-target experiments as well as in satellite-borne gamma-telescopes.
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Submitted 25 July, 2018; v1 submitted 27 March, 2018;
originally announced March 2018.
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Modification of the structure of diamond with MeV ion implantation
Authors:
F. Bosia,
N. Argiolas,
M. Bazzan,
P. Olivero,
F. Picollo,
A. Sordini,
M. Vannoni,
E. Vittone
Abstract:
We present experimental results and numerical simulations to investigate the modification of structural-mechanical properties of ion-implanted single-crystal diamond. A phenomenological model is used to derive an analytical expression for the variation of mass density and elastic properties as a function of damage density in the crystal. These relations are applied together with SRIM Monte Carlo s…
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We present experimental results and numerical simulations to investigate the modification of structural-mechanical properties of ion-implanted single-crystal diamond. A phenomenological model is used to derive an analytical expression for the variation of mass density and elastic properties as a function of damage density in the crystal. These relations are applied together with SRIM Monte Carlo simulations to set up Finite Element simulations for the determination of internal strains and surface deformation of MeV-ion-implanted diamond samples. The results are validated through comparison with high resolution X-ray diffraction and white-light interferometric profilometry experiments. The former are carried out on 180 keV B implanted diamond samples, to determine the induced structural variation, in terms of lattice spacing and disorder, whilst the latter are performed on 1.8 MeV He implanted diamond samples to measure surface swelling. The effect of thermal processing on the evolution of the structural-mechanical properties of damaged diamond is also evaluated by performing the same profilometric measurements after annealing at 1000 °C, and modeling the obtained trends with a suitably modified analytical model. The results allow the development of a coherent model describing the effects of MeV-ion-induced damage on the structural-mechanical properties of single-crystal diamond. In particular, we suggest a more reliable method to determine the so-called diamond "graphitization threshold" for the considered implantation type.
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Submitted 25 August, 2016;
originally announced August 2016.
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Direct measurement and modelling of internal strains in ion-implanted diamond
Authors:
Federico Bosia,
Nicola Argiolas,
Marco Bazzan,
Barbara A. Fairchild,
Andrew D. Greentree,
Desmond W. M. Lau,
Paolo Olivero,
Federico Picollo,
Sergey Rubanov,
Steven Prawer
Abstract:
We present a phenomenological model and Finite Element simulations to describe the depth variation of mass density and strain of ion-implanted single-crystal diamond. Several experiments are employed to validate the approach: firstly, samples implanted with 180 keV B ions at relatively low fluences are characterized using high-resolution X-ray diffraction (HR-XRD); secondly, the mass density varia…
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We present a phenomenological model and Finite Element simulations to describe the depth variation of mass density and strain of ion-implanted single-crystal diamond. Several experiments are employed to validate the approach: firstly, samples implanted with 180 keV B ions at relatively low fluences are characterized using high-resolution X-ray diffraction (HR-XRD); secondly, the mass density variation of a sample implanted with 500 keV He ions well above its amorphization threshold is characterized with Electron Energy Loss Spectroscopy (EELS). At high damage densities, the experimental depth profiles of strain and density display a saturation effect with increasing damage and a shift of the damage density peak towards greater depth values with respect to those predicted by TRIM simulations, which are well accounted for in the model presented here. The model is then further validated by comparing TEM-measured and simulated thickness values of a buried amorphous carbon layer formed at different depths by implantation of 500 keV He ions through a variable-thickness mask to simulate the simultaneous implantation of ions at different energies.
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Submitted 1 March, 2013;
originally announced March 2013.
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High resolution x-ray investigation of periodically poled lithium tantalate crystals with short periodicity
Authors:
Marco Bazzan,
Cinzia Sada,
Nicola Argiolas,
Alessandro C. Busacca,
Roberto L. Oliveri,
Salvatore Stivala,
Luciano Curcio,
Stefano Riva Sanseverino
Abstract:
Domain engineering technology in lithium tantalate is a well studied approach for nonlinear optical applications. However, for several cases of interest, the realization of short period structures (< 2 μm) is required, which make their characterization difficult with standard techniques. In this work, we show that high resolution x-ray diffraction is a convenient approach for the characterization…
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Domain engineering technology in lithium tantalate is a well studied approach for nonlinear optical applications. However, for several cases of interest, the realization of short period structures (< 2 μm) is required, which make their characterization difficult with standard techniques. In this work, we show that high resolution x-ray diffraction is a convenient approach for the characterization of such structures, allowing us to obtain in a nondestructive fashion information such as the average domain period, the domain wall inclination, and the overall structure quality.
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Submitted 24 September, 2012;
originally announced September 2012.
