Showing 1–22 of 22 results for author: Beanland, R

Modelling fine-sliced three dimensional electron diffraction data with dynamical Bloch-wave simulations

Authors: Anton Cleverley, Richard Beanland

Abstract: Recent interest in structure solution and refinement using electron diffraction (ED) has been fuelled by its inherent advantages when applied to crystals of sub-micron size, as well as a better sensitivity to light elements. Currently, data is often processed using software written for X-ray diffraction, using the kinematic theory of diffraction to generate model intensities -- despite the inheren… ▽ More Recent interest in structure solution and refinement using electron diffraction (ED) has been fuelled by its inherent advantages when applied to crystals of sub-micron size, as well as a better sensitivity to light elements. Currently, data is often processed using software written for X-ray diffraction, using the kinematic theory of diffraction to generate model intensities -- despite the inherent differences in diffraction processes in ED. Here, we use dynamical Bloch-wave simulations to model continuous rotation electron diffraction data, collected with a fine angular resolution (crystal orientations of $\sim0.1^\circ$). This fine-sliced data allows us to reexamine the corrections applied to ED data. We propose a new method for optimising crystal orientation, and take into account the angular range of the incident beam and varying slew rate. We extract observed integrated intensities and perform accurate comparisons with simulations using rocking curves for a (110) lamella of silicon 185~nm in thickness. $R_1$ is reduced from $26\%$ with the kinematic model to $6.8\%$ using dynamical simulations. △ Less

Submitted 19 August, 2022; originally announced August 2022.

Electrodeposited WS$_2$ Monolayers on Fabricated Graphene Electrodes

Authors: Yasir J Noori, Shibin Thomas, Sami Ramadan, Victoria K. Greenacre, Nema M. Abdelazim, Yisong Han, Jiapei Zhang, Richard Beanland, Andrew L. Hector, Norbert Klein, Gillian Reid, Philip Bartlett, Cornelis H. de Groot

Abstract: The development of scalable techniques to make 2D material heterostructures is a major obstacle that needs to be overcome before these materials can be implemented in device technologies industrially. Electrodeposition is an industrially compatible deposition technique that offers unique advantages in scaling 2D heterostructures. In this work, we demonstrate the electrodeposition of atomic layers… ▽ More The development of scalable techniques to make 2D material heterostructures is a major obstacle that needs to be overcome before these materials can be implemented in device technologies industrially. Electrodeposition is an industrially compatible deposition technique that offers unique advantages in scaling 2D heterostructures. In this work, we demonstrate the electrodeposition of atomic layers of WS$_2$ over graphene electrodes using a single source precursor. Using conventional microfabrication techniques, graphene was patterned to create micro-electrodes where WS$_2$ was site-selectively deposited to form 2D heterostructures. We used various characterisation techniques, including atomic force microscopy, transmission electron microscopy, Raman spectroscopy and x-ray photoelectron spectroscopy to show that our electrodeposited WS$_2$ layers are highly uniform and can be grown over graphene at a controllable deposition rate. This technique to selectively deposit TMDCs over microfabricated graphene electrodes paves the way towards wafer-scale production of 2D material heterostructures for nanodevice applications. △ Less

Submitted 31 August, 2021; originally announced September 2021.

Comments: 9 pages, 5 figures

Phase Change Memory by GeSbTe Electrodeposition in Crossbar Arrays

Authors: Yasir J Noori, Lingcong Meng, Ayoub H. Jaafar, Wenjian Zhang, Gabriela P. Kissling, Yisong Han, Nema Abdelazim, Kath Leblanc, Nikolay Zhelev, Ruomeng Huang, Richard Beanland, David C. Smith, Gill Reid, Kees de Groot, Philip N. Bartlett

Abstract: Phase change memories (PCM) is an emerging type of non-volatile memory that has shown a strong presence in the data-storage market. This technology has recently attracted significant research interest in the development of non-Von Neumann computing architectures such as in-memory and neuromorphic computing. Research in these areas has been primarily motivated by the scalability potential of phase… ▽ More Phase change memories (PCM) is an emerging type of non-volatile memory that has shown a strong presence in the data-storage market. This technology has recently attracted significant research interest in the development of non-Von Neumann computing architectures such as in-memory and neuromorphic computing. Research in these areas has been primarily motivated by the scalability potential of phase change materials and their compatibility with industrial nanofabrication processes. In this work, we are presenting our development of crossbar phase change memory arrays through the electrodeposition of GeSbTe (GST). We show that GST can be electrodeposited in microfabricated TiN crossbar arrays using a scalable process. Our phase switching test of the electrodeposited materials have shown that a SET/RESET resistance ratio of 2-3 orders of magnitude is achievable with a switching endurance of around 80 cycles. These results represent the first phase switching of electrodeposited GeSbTe in microfabricated crossbar arrays. Our work paves the way towards developing large memory arrays involving electrodeposited materials for passive selectors and phase switching devices. It also opens opportunities for developing a variety of different electronic devices using electrodeposited materials. △ Less

Submitted 2 August, 2021; v1 submitted 6 April, 2021; originally announced April 2021.

Comments: 9 pages, 5 figures

Lateral electrodeposition of MoS2 semiconductor over an insulator

Authors: Nema Abdelazim, Yasir J Noori, Shibin Thomas, Victoria K Greenacre, Yisong Han, Danielle E. Smith, Giacomo Piana, Nikolay Zhelev, Andrew L. Hector, Richard Beanland, Gillian Reid, Philip N Bartlett, Kees de Groot

Abstract: Developing novel techniques for depositing transition metal dichalcogenides is crucial for the industrial adoption of 2D materials in optoelectronics. In this work, the lateral growth of molybdenum disulfide (MoS2) over an insulating surface is demonstrated using electrochemical deposition. By fabricating a new type of microelectrodes, MoS2 2D films grown from TiN electrodes across opposite sides… ▽ More Developing novel techniques for depositing transition metal dichalcogenides is crucial for the industrial adoption of 2D materials in optoelectronics. In this work, the lateral growth of molybdenum disulfide (MoS2) over an insulating surface is demonstrated using electrochemical deposition. By fabricating a new type of microelectrodes, MoS2 2D films grown from TiN electrodes across opposite sides have been connected over an insulating substrate, hence, forming a lateral device structure through only one lithography and deposition step. Using a variety of characterization techniques, the growth rate of MoS2 has been shown to be highly anisotropic with lateral to vertical growth ratios exceeding 20-fold. Electronic and photo-response measurements on the device structures demonstrate that the electrodeposited MoS2 layers behave like semiconductors, confirming their potential for photodetection applications. This lateral growth technique paves the way towards room temperature, scalable and site-selective production of various transition metal dichalcogenides and their lateral heterostructures for 2D materials-based fabricated devices. △ Less

Submitted 26 November, 2021; v1 submitted 1 April, 2021; originally announced April 2021.

Comments: 8 pages, 5 figures

Unsupervised learning of ferroic variants from atomically resolved STEM images

Authors: Mani Valleti, Sergei V. Kalinin, Christopher T. Nelson, Jonathan J. P. Peters, Wen Dong, Richard Beanland, Xiaohang Zhang, Ichiro Takeuchi, Maxim Ziatdinov

Abstract: An approach for the analysis of atomically resolved scanning transmission electron microscopy data with multiple ferroic variants in the presence of imaging non-idealities and chemical variabilities based on a rotationally invariant variational autoencoder (rVAE) is presented. We show that an optimal local descriptor for the analysis is a sub-image centered at specific atomic units, since material… ▽ More An approach for the analysis of atomically resolved scanning transmission electron microscopy data with multiple ferroic variants in the presence of imaging non-idealities and chemical variabilities based on a rotationally invariant variational autoencoder (rVAE) is presented. We show that an optimal local descriptor for the analysis is a sub-image centered at specific atomic units, since materials and microscope distortions preclude the use of an ideal lattice as a reference point. The applicability of unsupervised clustering and dimensionality reduction methods is explored and are shown to produce clusters dominated by chemical and microscope effects, with a large number of classes required to establish the presence of rotational variants. Comparatively, the rVAE allows extraction of the angle corresponding to the orientation of ferroic variants explicitly, enabling straightforward identification of the ferroic variants as regions with constant or smoothly changing latent variables and sharp orientational changes. This approach allows further exploration of the chemical variability by separating the rotational degrees of freedom via rVAE and searching for remaining variability in the system. The code used in the manuscript is available at https://github.com/saimani5/ferroelectric_domains_rVAE. △ Less

Submitted 20 June, 2022; v1 submitted 18 January, 2021; originally announced January 2021.

Comments: 19 pages, 7 Figures

Characterizing oxygen atoms in perovskite and pyrochlore oxides using ADF-STEM at a resolution of a few tens of picometers

Authors: Ali Mostaed, Brant Walkley, Monica Ciomaga Hatnean, Geetha Balakrishnan, Martin R. Lees, Richard Beanland, Derek C. Sinclair, Ian M. Reaney

Abstract: We present an aberration corrected scanning transmission electron microscopy (ac-STEM) analysis of the perovskite (LaFeO3) and pyrochlore (Yb2Ti2O7 and Pr2Zr2O7) oxides and demonstrate that both the shape and contrast of visible atomic columns in annular dark-field (ADF) images are sensitive to the presence of nearby atoms of low atomic number (e.g. oxygen). We show that point defects (e.g. oxygen… ▽ More We present an aberration corrected scanning transmission electron microscopy (ac-STEM) analysis of the perovskite (LaFeO3) and pyrochlore (Yb2Ti2O7 and Pr2Zr2O7) oxides and demonstrate that both the shape and contrast of visible atomic columns in annular dark-field (ADF) images are sensitive to the presence of nearby atoms of low atomic number (e.g. oxygen). We show that point defects (e.g. oxygen vacancies), which are invisible - or difficult to observe due to limited sensitivity - in X-ray and neutron diffraction measurements, are the origin of the complex magnetic ground state of pyrochlore oxides. In addition, we present, for the first time, a method by which light atoms can be resolved in quantitative ADF-STEM images. Using this method, we resolved oxygen atoms in perovskite and pyrochlore oxides. △ Less

Submitted 21 September, 2020; originally announced September 2020.

Comments: 18 pages and 7 figures plus supplementary information

Large-Area Electrodeposition of Few-Layer MoS2 on Graphene for 2D Material Heterostructures

Authors: Yasir J. Noori, Shibin Thomas, Sami Ramadan, Danielle E. Smith, Victoria K. Greenacre, Nema Abdelazim, Yisong Han, Richard Beanland, Andrew L. Hector, Norbert Klein, Gill Reid, Phillip N. Bartlett, Cornelis H. de Groot

Abstract: Heterostructures involving two-dimensional (2D) transition metal dichalcogenides and other materials such as graphene have a strong potential to be the fundamental building block of many electronic and opto-electronic applications. The integration and scalable fabrication of such heterostructures is of essence in unleashing the potential of these materials in new technologies. For the first time,… ▽ More Heterostructures involving two-dimensional (2D) transition metal dichalcogenides and other materials such as graphene have a strong potential to be the fundamental building block of many electronic and opto-electronic applications. The integration and scalable fabrication of such heterostructures is of essence in unleashing the potential of these materials in new technologies. For the first time, we demonstrate the growth of few-layer MoS2 films on graphene via non-aqueous electrodeposition. Through methods such as scanning and transmission electron microscopy, atomic force microscopy, Raman spectroscopy, energy and wavelength dispersive X-ray spectroscopies and X-ray photoelectron spectroscopy, we show that this deposition method can produce large-area MoS2 films with high quality and uniformity over graphene. We reveal the potential of these heterostructures by measuring the photo-induced current through the film. These results pave the way towards developing the electrodeposition method for the large-scale growth of heterostructures consisting of varying 2D materials for many applications. △ Less

Submitted 22 November, 2020; v1 submitted 18 May, 2020; originally announced May 2020.

Comments: 11 pages and 6 figures

Journal ref: ACS Applied Materials and Interfaces, 2020, 12, 44, 49786-49794

Exit Wavefunction Reconstruction from Single Transmission Electron Micrographs with Deep Learning

Authors: Jeffrey M. Ede, Jonathan J. P. Peters, Jeremy Sloan, Richard Beanland

Abstract: Half of wavefunction information is undetected by conventional transmission electron microscopy (CTEM) as only the intensity, and not the phase, of an image is recorded. Following successful applications of deep learning to optical hologram phase recovery, we have developed neural networks to recover phases from CTEM intensities for new datasets containing 98340 exit wavefunctions. Wavefunctions w… ▽ More Half of wavefunction information is undetected by conventional transmission electron microscopy (CTEM) as only the intensity, and not the phase, of an image is recorded. Following successful applications of deep learning to optical hologram phase recovery, we have developed neural networks to recover phases from CTEM intensities for new datasets containing 98340 exit wavefunctions. Wavefunctions were simulated with clTEM multislice propagation for 12789 materials from the Crystallography Open Database. Our networks can recover 224x224 wavefunctions in ~25 ms for a large range of physical hyperparameters and materials, and we demonstrate that performance improves as the distribution of wavefunctions is restricted. Phase recovery with deep learning overcomes the limitations of traditional methods: it is live, not susceptible to distortions, does not require microscope modification or multiple images, and can be applied to any imaging regime. This paper introduces multiple approaches to CTEM phase recovery with deep learning, and is intended to establish starting points to be improved upon by future research. Source code and links to our new datasets and pre-trained models are available at https://github.com/Jeffrey-Ede/one-shot △ Less

Submitted 30 January, 2020; v1 submitted 29 January, 2020; originally announced January 2020.

Comments: 14 pages, 7 figures, 2 tables

Adaptive Learning Rate Clipping Stabilizes Learning

Authors: Jeffrey M. Ede, Richard Beanland

Abstract: Artificial neural network training with stochastic gradient descent can be destabilized by "bad batches" with high losses. This is often problematic for training with small batch sizes, high order loss functions or unstably high learning rates. To stabilize learning, we have developed adaptive learning rate clipping (ALRC) to limit backpropagated losses to a number of standard deviations above the… ▽ More Artificial neural network training with stochastic gradient descent can be destabilized by "bad batches" with high losses. This is often problematic for training with small batch sizes, high order loss functions or unstably high learning rates. To stabilize learning, we have developed adaptive learning rate clipping (ALRC) to limit backpropagated losses to a number of standard deviations above their running means. ALRC is designed to complement existing learning algorithms: Our algorithm is computationally inexpensive, can be applied to any loss function or batch size, is robust to hyperparameter choices and does not affect backpropagated gradient distributions. Experiments with CIFAR-10 supersampling show that ALCR decreases errors for unstable mean quartic error training while stable mean squared error training is unaffected. We also show that ALRC decreases unstable mean squared errors for partial scanning transmission electron micrograph completion. Our source code is publicly available at https://github.com/Jeffrey-Ede/ALRC △ Less

Submitted 24 June, 2019; v1 submitted 21 June, 2019; originally announced June 2019.

Comments: 7 pages, 6 figures, 1 table

Journal ref: Mach. Learn.: Sci. Technol. 1 015011 (2020)

Partial Scanning Transmission Electron Microscopy with Deep Learning

Authors: Jeffrey M. Ede, Richard Beanland

Abstract: Compressed sensing algorithms are used to decrease electron microscope scan time and electron beam exposure with minimal information loss. Following successful applications of deep learning to compressed sensing, we have developed a two-stage multiscale generative adversarial neural network to complete realistic 512$\times$512 scanning transmission electron micrographs from spiral, jittered gridli… ▽ More Compressed sensing algorithms are used to decrease electron microscope scan time and electron beam exposure with minimal information loss. Following successful applications of deep learning to compressed sensing, we have developed a two-stage multiscale generative adversarial neural network to complete realistic 512$\times$512 scanning transmission electron micrographs from spiral, jittered gridlike, and other partial scans. For spiral scans and mean squared error based pre-training, this enables electron beam coverage to be decreased by 17.9$\times$ with a 3.8\% test set root mean squared intensity error, and by 87.0$\times$ with a 6.2\% error. Our generator networks are trained on partial scans created from a new dataset of 16227 scanning transmission electron micrographs. High performance is achieved with adaptive learning rate clipping of loss spikes and an auxiliary trainer network. Our source code, new dataset, and pre-trained models have been made publicly available at https://github.com/Jeffrey-Ede/partial-STEM △ Less

Submitted 14 February, 2020; v1 submitted 31 May, 2019; originally announced May 2019.

Comments: 20 pages, 11 figures

Journal ref: Sci Rep 10, 8332 (2020)

Structure refinement from 'Digital' Large Angle Convergent Beam Electron Diffraction Patterns

Authors: Alex Hubert, Rudolf A. Römer, Richard Beanland

Abstract: We use semi-automated data acquisition and processing to produce digital large angle CBED (D-LACBED) patterns. We demonstrate refinements of atomic coordinates and isotropic Debye-Waller factors for well-known materials using simulations produced with a neutral, spherical independent atom model. We find that atomic coordinate refinements in Al2O3 have sub-pm precision and accuracy. Isotropic DWFs… ▽ More We use semi-automated data acquisition and processing to produce digital large angle CBED (D-LACBED) patterns. We demonstrate refinements of atomic coordinates and isotropic Debye-Waller factors for well-known materials using simulations produced with a neutral, spherical independent atom model. We find that atomic coordinate refinements in Al2O3 have sub-pm precision and accuracy. Isotropic DWFs are accurate for Cu, a simple fcc metal, but do not agree with X-ray measurements of GaAs or Al2O3. This indicates that models of bonding will be essential to fully interpret D-LACBED data. △ Less

Submitted 16 October, 2018; originally announced November 2018.

Journal ref: Ultramicroscopy 198, 1-9 (2019)

MOVPE growth, transmission electron microscopy and magneto-optical spectroscopy of individual InAsP/GaInP quantum dots

Authors: O. Del Pozo-Zamudio, J. Puebla, A. B. Krysa, R. Toro, A. M. Sanchez, R. Beanland, A. I. Tartakovskii, M. S. Skolnick, E. A. Chekhovich

Abstract: We report on growth and characterization of individual InAsP/GaInP quantum dots with variable nominal As molar fraction. Magneto-photoluminescence experiments reveal QD emission in a wide range from 1.3 to 1.8 eV confirming incorporation of As into quantum dots. Transmission electron microscopy reveals a core-cap structure of InAsP quantum dots with an InAs-rich core capped by an InP-rich layer. I… ▽ More We report on growth and characterization of individual InAsP/GaInP quantum dots with variable nominal As molar fraction. Magneto-photoluminescence experiments reveal QD emission in a wide range from 1.3 to 1.8 eV confirming incorporation of As into quantum dots. Transmission electron microscopy reveals a core-cap structure of InAsP quantum dots with an InAs-rich core capped by an InP-rich layer. Inside the core, an As molar fraction up to x=0.12 is observed. The heavy hole g-factor is found to be strongly dependent on As molar fraction, while the electron g-factor is close to the InP values. This suggests type-II carrier confinement in the studied InAsP dots with holes (electrons) localized in the core (cap) region. Finally, dynamic nuclear polarization is observed which allows for further insight into structural properties using nuclear magnetic resonance. △ Less

Submitted 5 May, 2017; originally announced May 2017.

Journal ref: Phys. Rev. Materials 1, 034605 (2017)

Artefacts in geometric phase analysis of compound materials

Authors: Jonathan J. P. Petersa, Richard Beanland, Marin Alexe, John W. Cockburn, Dmitry G. Revin, Shiyong Y. Zhang, Ana M. Sanchez

Abstract: The geometric phase analysis (GPA) algorithm is known as a robust and straightforward technique that can be used to measure lattice strains in high resolution transmission electron microscope (TEM) images. It is also attractive for analysis of aberration-corrected scanning TEM (ac-STEM) images that resolve every atom column, since it uses Fourier transforms and does not require real-space peak det… ▽ More The geometric phase analysis (GPA) algorithm is known as a robust and straightforward technique that can be used to measure lattice strains in high resolution transmission electron microscope (TEM) images. It is also attractive for analysis of aberration-corrected scanning TEM (ac-STEM) images that resolve every atom column, since it uses Fourier transforms and does not require real-space peak detection and assignment to appropriate sublattices. Here it is demonstrated that in ac-STEM images of compound materials (i.e. with more than one atom per unit cell) an additional phase is present in the Fourier transform. If the structure changes from one area to another in the image (e.g. across an interface), the change in this additional phase will appear as a strain in conventional GPA, even if there is no lattice strain. Strategies to avoid this pitfall are outlined. △ Less

Submitted 23 April, 2015; originally announced April 2015.

Comments: 9 pages, 7 figures, Preprint before review, submitted to Ultramicroscopy 7 April 2015

Design rules for dislocation filters

Authors: Tom Ward, Ana M. Sánchez, Mingchu Tang, Jiang Wu, Huiyun Liu, David J. Dunstan, Richard Beanland

Abstract: The efficacy of strained layer threading dislocation filter structures in single crystal epitaxial layers is evaluated using numerical modeling for (001) face-centred cubic materials, such as GaAs or Si(1-x)Ge(x), and (0001) hexagonal materials such as GaN. We find that threading dislocation densities decay exponentially as a function of the strain relieved, irrespective of the fraction of threadi… ▽ More The efficacy of strained layer threading dislocation filter structures in single crystal epitaxial layers is evaluated using numerical modeling for (001) face-centred cubic materials, such as GaAs or Si(1-x)Ge(x), and (0001) hexagonal materials such as GaN. We find that threading dislocation densities decay exponentially as a function of the strain relieved, irrespective of the fraction of threading dislocations that are mobile. Reactions between threading dislocations tend to produce a population that is a balanced mixture of mobile and sessile in (001) cubic materials. In contrast, mobile threading dislocations tend to be lost very rapidly in (0001) GaN, often with little or no reduction in the immobile dislocation density. The capture radius for threading dislocation interactions is estimated to be approx. 40nm using cross section transmission electron microscopy of dislocation filtering structures in GaAs monolithically grown on Si. We find that the minimum threading dislocation density that can be obtained in any given structure is likely to be limited by kinetic effects to approx. 1.0e+04 to 1.0e+05 per square cm. △ Less

Submitted 13 July, 2014; originally announced July 2014.

Comments: 18 pages, 9 figures

Lateral heterojunctions within monolayer semiconductors

Authors: Chunming Huang, Sanfeng Wu, Ana M. Sanchez, Jonathan J. P. Peters, Richard Beanland, Jason S. Ross, Pasqual Rivera, Wang Yao, David H. Cobden, Xiaodong Xu

Abstract: Heterojunctions between three-dimensional (3D) semiconductors with different bandgaps are the basis of modern light-emitting diodes, diode lasers, and high-speed transistors. Creating analogous heterojunctions between different two-dimensional (2D) semiconductors would enable band engineering within the 2D plane and open up new realms in materials science, device physics and engineering. Here we d… ▽ More Heterojunctions between three-dimensional (3D) semiconductors with different bandgaps are the basis of modern light-emitting diodes, diode lasers, and high-speed transistors. Creating analogous heterojunctions between different two-dimensional (2D) semiconductors would enable band engineering within the 2D plane and open up new realms in materials science, device physics and engineering. Here we demonstrate that seamless high-quality in-plane heterojunctions can be grown between the 2D monolayer semiconductors MoSe2 and WSe2. The junctions, grown by lateral hetero-epitaxy using physical vapor transport, are visible in an optical microscope and show enhanced photoluminescence. Atomically resolved transmission electron microscopy reveals that their structure is an undistorted honeycomb lattice in which substitution of one transition metal by another occurs across the interface. The growth of such lateral junctions will allow new device functionalities, such as in-plane transistors and diodes, to be integrated within a single atomically thin layer. △ Less

Submitted 12 June, 2014; originally announced June 2014.

Comments: 14 pages manuscript + 12 pages supplementary information

Bayesian Density Estimation via Multiple Sequential Inversions of 2-D Images with Application in Electron Microscopy

Authors: Dalia Chakrabarty, Fabio Rigat, Nare Gabrielyan, Richard Beanland, Shashi Paul

Abstract: We present a new Bayesian methodology to learn the unknown material density of a given sample by inverting its two-dimensional images that are taken with a Scanning Electron Microscope. An image results from a sequence of projections of the convolution of the density function with the unknown microscopy correction function that we also learn from the data. We invoke a novel design of experiment, i… ▽ More We present a new Bayesian methodology to learn the unknown material density of a given sample by inverting its two-dimensional images that are taken with a Scanning Electron Microscope. An image results from a sequence of projections of the convolution of the density function with the unknown microscopy correction function that we also learn from the data. We invoke a novel design of experiment, involving imaging at multiple values of the parameter that controls the sub-surface depth from which information about the density structure is carried, to result in the image. Real-life material density functions are characterised by high density contrasts and typically are highly discontinuous, implying that they exhibit correlation structures that do not vary smoothly. In the absence of training data, modelling such correlation structures of real material density functions is not possible. So we discretise the material sample and treat values of the density function at chosen locations inside it as independent and distribution-free parameters. Resolution of the available image dictates the discretisation length of the model; three models pertaining to distinct resolution classes are developed. We develop priors on the material density, such that these priors adapt to the sparsity inherent in the density function. The likelihood is defined in terms of the distance between the convolution of the unknown functions and the image data. The posterior probability density of the unknowns given the data is expressed using the developed priors on the density and priors on the microscopy correction function as elicitated from the Microscopy literature. We achieve posterior samples using an adaptive Metropolis-within-Gibbs inference scheme. The method is applied to learn the material density of a 3-D sample of a real nano-structure and of simulated alloy samples. △ Less

Submitted 3 March, 2014; originally announced March 2014.

Comments: Accepted for Publication in Technometrics

The structure of planar defects in tilted perovskites

Authors: Richard Beanland

Abstract: A mathematical framework is developed to describe tilted perovskites using a tensor description of octahedral deformations. The continuity of octahedral tilts through the crystal is described using an operator which relates the deformations of adjacent octahedra; examination of the properties of this operator upon application of symmetry elements allows the space group of tilted perovskites to be… ▽ More A mathematical framework is developed to describe tilted perovskites using a tensor description of octahedral deformations. The continuity of octahedral tilts through the crystal is described using an operator which relates the deformations of adjacent octahedra; examination of the properties of this operator upon application of symmetry elements allows the space group of tilted perovskites to be obtained. It is shown that the condition of octahedral continuity across a planar defect such as an anti-phase boundary or domain wall necessarily leads to different octahedral tilting at the defect, and a method is given to predict the local tilt system which will occur in any given case. Planar boundaries in the rhombohedral R3c a-a-a- tilt system are considered as an example. △ Less

Submitted 20 March, 2013; originally announced March 2013.

Comments: 20 pages, 4 Figures

Journal ref: Acta Crystallographica (2011). A67, 191-199

'Digital' Electron Diffraction - Seeing the Whole Picture

Authors: Richard Beanland, Paul J. Thomas, David I. Woodward, Pamela A. Thomas, Rudolf A. Roemer

Abstract: The advantages of convergent beam electron diffraction for symmetry determination at the scale of a few nm are well known. In practice, the approach is often limited due to the restriction on the angular range of the electron beam imposed by the small Bragg angle for high energy electron diffraction, i.e. a large convergence angle of the incident beam results in overlapping information in the diff… ▽ More The advantages of convergent beam electron diffraction for symmetry determination at the scale of a few nm are well known. In practice, the approach is often limited due to the restriction on the angular range of the electron beam imposed by the small Bragg angle for high energy electron diffraction, i.e. a large convergence angle of the incident beam results in overlapping information in the diffraction pattern. Techniques have been generally available since the 1980s which overcome this restriction for individual diffracted beams, by making a compromise between illuminated area and beam convergence. Here, we describe a simple technique which overcomes all of these problems using computer control, giving electron diffraction data over a large angular range for many diffracted beams from the volume given by a focused electron beam (typically a few nm or less). The increase in the amount of information significantly improves ease of interpretation and widens the applicability of the technique, particularly for thin materials or those with larger lattice parameters. △ Less

Submitted 28 November, 2012; originally announced November 2012.

Comments: 13 pages, 8 figures

Journal ref: Acta Cryst. (2013). A69, 427-434

III-V quantum light source and cavity-QED on Silicon

Authors: Isaac J. Luxmoore, Romain Toro, Osvaldo Del Pozo-Zamudio, Nicholas A. Wasley, Evgeny A. Chekhovich, Ana M. Sanchez, Richard Beanland, A. Mark Fox, Maurice S. Skolnick, Huiyun Y. Liu, Alexander I. Tartakovskii

Abstract: Non-classical light sources offer a myriad of possibilities in fundamental science and applications including quantum cryptography and quantum lithography. Single photons can encode quantum information and multi-qubit gates in silica waveguide circuits have been used to demonstrate linear optical quantum computing. Scale-up requires miniaturisation of the waveguide circuit and multiple photon sour… ▽ More Non-classical light sources offer a myriad of possibilities in fundamental science and applications including quantum cryptography and quantum lithography. Single photons can encode quantum information and multi-qubit gates in silica waveguide circuits have been used to demonstrate linear optical quantum computing. Scale-up requires miniaturisation of the waveguide circuit and multiple photon sources. Silicon photonics, driven by the incentive of optical interconnects, is a highly promising platform for the passive components, but integrated light sources are limited by silicon's indirect band-gap. III-V semiconductor quantum-dots, on the other hand, are proven quantum emitters. Here we demonstrate single-photon emission from quantum-dots coupled to photonic crystal nanocavities fabricated from III-V material grown directly on silicon substrates. The high quality of the III-V material and photonic structures is emphasized by observation of the strong-coupling regime. This work opens-up the advantages of silicon photonics to the integration and scale-up of solid-state quantum optical systems. △ Less

Submitted 22 November, 2012; originally announced November 2012.

Journal ref: Scientific Reports 3, 1239 (2013)

High resolution nuclear magnetic resonance spectroscopy of highly-strained quantum dot nanostructures

Authors: E. A. Chekhovich, K. V. Kavokin, J. Puebla, A. B. Krysa, M. Hopkinson, A. D. Andreev, A. M. Sanchez, R. Beanland, M. S. Skolnick, A. I. Tartakovskii

Abstract: Much new solid state technology for single-photon sources, detectors, photovoltaics and quantum computation relies on the fabrication of strained semiconductor nanostructures. Successful development of these devices depends strongly on techniques allowing structural analysis on the nanometer scale. However, commonly used microscopy methods are destructive, leading to the loss of the important link… ▽ More Much new solid state technology for single-photon sources, detectors, photovoltaics and quantum computation relies on the fabrication of strained semiconductor nanostructures. Successful development of these devices depends strongly on techniques allowing structural analysis on the nanometer scale. However, commonly used microscopy methods are destructive, leading to the loss of the important link between the obtained structural information and the electronic and optical properties of the device. Alternative non-invasive techniques such as optically detected nuclear magnetic resonance (ODNMR) so far proved difficult in semiconductor nano-structures due to significant strain-induced quadrupole broadening of the NMR spectra. Here, we develop new high sensitivity techniques that move ODNMR to a new regime, allowing high resolution spectroscopy of as few as 100000 quadrupole nuclear spins. By applying these techniques to individual strained self-assembled quantum dots, we measure strain distribution and chemical composition in the volume occupied by the confined electron. Furthermore, strain-induced spectral broadening is found to lead to suppression of nuclear spin magnetization fluctuations thus extending spin coherence times. The new ODNMR methods have potential to be applied for non-invasive investigations of a wide range of materials beyond single nano-structures, as well as address the task of understanding and control of nuclear spins on the nanoscale, one of the central problems in quantum information processing. △ Less

Submitted 17 December, 2011; originally announced December 2011.

Journal ref: Nature Nanotechnology 7, 646 (2012)

Cubic MnSb: epitaxial growth of a predicted room temperature half-metal

Authors: James D. Aldous, Christopher W. Burrows, Ana M. Sánchez, Richard Beanland, Ian Maskery, Matthew K. Bradley, Manuel dos Santos Dias, Julie B. Staunton, Gavin R. Bell

Abstract: Epitaxial films including bulk-like cubic and wurtzite polymorphs of MnSb have been grown by molecular beam epitaxy on GaAs via careful control of the Sb4/Mn flux ratio. Nonzero-temperature density functional theory was used to predict ab initio the spin polarization as a function of reduced magnetization for the half-metals NiMnSb and cubic MnSb. In both cases, half-metallicity is lost at a thres… ▽ More Epitaxial films including bulk-like cubic and wurtzite polymorphs of MnSb have been grown by molecular beam epitaxy on GaAs via careful control of the Sb4/Mn flux ratio. Nonzero-temperature density functional theory was used to predict ab initio the spin polarization as a function of reduced magnetization for the half-metals NiMnSb and cubic MnSb. In both cases, half-metallicity is lost at a threshold magnetization reduction, corresponding to a temperature T*< Tc. This threshold is far higher for cubic MnSb compared to NiMnSb and corresponds to T* > 350K, making epitaxial cubic MnSb a promising candidate for room temperature spin injection into semiconductors. △ Less

Submitted 30 September, 2011; originally announced September 2011.

Comments: 3 figures

On the structure and topography of free-standing chemically modified graphene

Authors: N R Wilson, P A Pandey, R Beanland, J P Rourke, U Lupo, G Rowlands, R A Römer

Abstract: The mechanical, electrical and chemical properties of chemically modified graphene (CMG) are intrinsically linked to its structure. Here we report on our study of the topographic structure of free-standing CMG using atomic force microscopy and electron diffraction. We find that, unlike graphene, suspended sheets of CMG are corrugated and distorted on nanometre length scales. AFM reveals not only l… ▽ More The mechanical, electrical and chemical properties of chemically modified graphene (CMG) are intrinsically linked to its structure. Here we report on our study of the topographic structure of free-standing CMG using atomic force microscopy and electron diffraction. We find that, unlike graphene, suspended sheets of CMG are corrugated and distorted on nanometre length scales. AFM reveals not only long range (100 nm) distortions induced by the support, as previously observed for graphene, but also short-range corrugations with length scales down to the resolution limit of 10 nm. These corrugations are static not dynamic, and are significantly diminished on CMG supported on atomically smooth substrates. Evidence for even shorter range distortions, down to a few nanometres or less, is found by electron diffraction of suspended CMG. Comparison of the experimental data with simulations reveals that the mean atomic displacement from the nominal lattice position is of order 10% of the carbon-carbon bond length. Taken together, these results suggest a complex structure for chemically modified graphene where heterogeneous functionalisation creates local strain and distortion. △ Less

Submitted 20 July, 2010; originally announced July 2010.

Comments: Supplementary information available from authors upon request

Journal ref: New. J. Phys. 12, 125010 (2010)