Perovskite-perovskite tandem photovoltaics with optimized bandgaps
Authors:
Giles E. Eperon,
Tomas Leijtens,
Kevin A. Bush,
Rohit Prasanna,
Thomas Green,
Jacob Tse-Wei Wang,
David P. McMeekin,
George Volonakis,
Rebecca L. Milot,
Richard May,
Axel Palmstrom,
Daniel J. Slotcavage,
Rebecca A. Belisle,
Jay B. Patel,
Elizabeth S. Parrott,
Rebecca J. Sutton,
Wen Ma,
Farhad Moghadam,
Bert Conings,
Aslihan Babayigit,
Hans-Gerd Boyen,
Stacey Bent,
Feliciano Giustino,
Laura M. Herz,
Michael B. Johnston
, et al. (2 additional authors not shown)
Abstract:
We demonstrate four and two-terminal perovskite-perovskite tandem solar cells with ideally matched bandgaps. We develop an infrared absorbing 1.2eV bandgap perovskite, $FA_{0.75}Cs_{0.25}Sn_{0.5}Pb_{0.5}I_3$, that can deliver 14.8 % efficiency. By combining this material with a wider bandgap $FA_{0.83}Cs_{0.17}Pb(I_{0.5}Br_{0.5})_3$ material, we reach monolithic two terminal tandem efficiencies of…
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We demonstrate four and two-terminal perovskite-perovskite tandem solar cells with ideally matched bandgaps. We develop an infrared absorbing 1.2eV bandgap perovskite, $FA_{0.75}Cs_{0.25}Sn_{0.5}Pb_{0.5}I_3$, that can deliver 14.8 % efficiency. By combining this material with a wider bandgap $FA_{0.83}Cs_{0.17}Pb(I_{0.5}Br_{0.5})_3$ material, we reach monolithic two terminal tandem efficiencies of 17.0 % with over 1.65 volts open-circuit voltage. We also make mechanically stacked four terminal tandem cells and obtain 20.3 % efficiency. Crucially, we find that our infrared absorbing perovskite cells exhibit excellent thermal and atmospheric stability, unprecedented for Sn based perovskites. This device architecture and materials set will enable 'all perovskite' thin film solar cells to reach the highest efficiencies in the long term at the lowest costs.
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Submitted 20 January, 2017; v1 submitted 12 August, 2016;
originally announced August 2016.
Selective metal deposition at graphene line defects by atomic layer deposition
Authors:
Kwanpyo Kim,
Han-Bo-Ram Lee,
Richard W. Johnson,
Jukka T. Tanskanen,
Nan Liu,
Myung-Gil Kim,
Changhyun Pang,
Chiyui Ahn,
Stacey F. Bent,
Zhenan Bao
Abstract:
One-dimensional defects in graphene have strong influence on its physical properties, such as electrical charge transport and mechanical strength. With enhanced chemical reactivity, such defects may also allow us to selectively functionalize the material and systematically tune the properties of graphene. Here we demonstrate the selective deposition of metal at chemical vapour deposited graphene's…
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One-dimensional defects in graphene have strong influence on its physical properties, such as electrical charge transport and mechanical strength. With enhanced chemical reactivity, such defects may also allow us to selectively functionalize the material and systematically tune the properties of graphene. Here we demonstrate the selective deposition of metal at chemical vapour deposited graphene's line defects, notably grain boundaries, by atomic layer deposition. Atomic layer deposition allows us to deposit Pt predominantly on graphene's grain boundaries, folds, and cracks due to the enhanced chemical reactivity of these line defects, which is directly confirmed by transmission electron microscopy imaging. The selective functionalization of graphene defect sites, together with the nanowire morphology of deposited Pt, yields a superior platform for sensing applications. Using Pt-graphene hybrid structures, we demonstrate high-performance hydrogen gas sensors at room temperatures and show its advantages over other evaporative Pt deposition methods, in which Pt decorates graphene surface non-selectively.
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Submitted 20 October, 2014;
originally announced October 2014.
