Showing 1–9 of 9 results for author: Borovikov, V

Development of interatomic potential appropriate for simulation of dislocation migration in fcc Fe

Authors: Mikhail I. Mendelev, Valery Borovikov

Abstract: Molecular dynamics (MD) simulation of dislocation migration requires semi-empirical potentials of the interatomic interaction. While there are many reliable semi-empirical potentials for the bcc Fe, the number of the available potentials for the fcc is very limited. In the present study we tested three EAM potentials for the fcc Fe (ABCH97 [Phil. Mag. A, 75, 713-732 (1997)], BCT13 [MSMSE 21, 08500… ▽ More Molecular dynamics (MD) simulation of dislocation migration requires semi-empirical potentials of the interatomic interaction. While there are many reliable semi-empirical potentials for the bcc Fe, the number of the available potentials for the fcc is very limited. In the present study we tested three EAM potentials for the fcc Fe (ABCH97 [Phil. Mag. A, 75, 713-732 (1997)], BCT13 [MSMSE 21, 085004 (2013)] and ZFS18 [J. Comp. Chem. 39, 2420-2431 (2018)]) from literature. It was found that the ABCH97 potential does not provide that the fcc phase is the most stable at any temperature. On the other hand, the fcc phase is always more stable than the bcc phase for the BCT13, ZFS18 potentials. The hcp phase is the most stable phase for the BCT13 potential at any temperature. In order to fix these problems we developed two new EAM potentials (MB1 and MB2). The fcc phase is still more stable than the bcc phase for the MB1 potential but the MB2 potential provides that the bcc phase is the most stable phase from the upper fcc-bcc transformation temperature, T_gamma-delta, to the melting temperature, Tm, and the fcc phase is the most stable phase below T_gamma-delta. This potential also leads to an excellent agreement with the experimental data on the fcc elastic constants and reasonable stacking fault energy which makes it the best potential for the simulation of the dislocation migration in the fcc Fe among all semi-empirical potentials considered in the present study. The MD simulation demonstrated that only the ZFS18, MB1 and MB2 potentials are actually suitable for the simulation of the dislocation migration in the fcc Fe. They lead to the same orders of magnitude for the dislocation velocities and all of them show that the edge dislocation is faster than the screw dislocation. However, the actual values of the dislocation velocities do depend on the employed semi-empirical potential. △ Less

Submitted 25 September, 2020; originally announced September 2020.

Effects of Grain Boundary Disorder on Yield Strength

Authors: Valery Borovikov, Mikhail I. Mendelev, Alexander H. King

Abstract: It was recently reported that segregation of Zr to grain boundaries (GB) in nanocrystalline Cu can lead to the formation of disordered intergranular films [1,2]. In this study we employ atomistic computer simulations to study how the formation of these films affects the dislocation nucleation from the GBs. We found that full disorder of the grain boundary structure leads to the suppression of disl… ▽ More It was recently reported that segregation of Zr to grain boundaries (GB) in nanocrystalline Cu can lead to the formation of disordered intergranular films [1,2]. In this study we employ atomistic computer simulations to study how the formation of these films affects the dislocation nucleation from the GBs. We found that full disorder of the grain boundary structure leads to the suppression of dislocation emission and significant increase of the yield stress. Depending on the solute concentration and heat-treatment, however, a partial disorder may also occur and this aids dislocation nucleation rather than suppressing it, resulting in elimination of the strengthening effect. △ Less

Submitted 22 February, 2018; originally announced February 2018.

Effect of Ag and Zr solutes on dislocation emission from the Σ11(332)[110] symmetric tilt grain boundary in fcc Cu

Authors: Valery Borovikov, Mikhail I. Mendelev, Alexander H. King

Abstract: Addition of solutes is commonly used to stabilize nanocrystalline materials against grain growth. However, segregating at grain boundaries, these solutes also affect the process of dislocation nucleation from grain boundaries under applied stress. Using atomistic simulations we demonstrate that the effect of solutes on the dislocation nucleation strongly depends on the distribution of solutes at t… ▽ More Addition of solutes is commonly used to stabilize nanocrystalline materials against grain growth. However, segregating at grain boundaries, these solutes also affect the process of dislocation nucleation from grain boundaries under applied stress. Using atomistic simulations we demonstrate that the effect of solutes on the dislocation nucleation strongly depends on the distribution of solutes at the grain boundary, which can vary dramatically depending on the solute type. In particular, our results indicate that the solutes with a smaller size mismatch can be more effective in suppressing dislocation emission from grain boundaries. Bearing in mind that dislocation slip originating from grain boundaries or their triple junctions is the dominant mechanism of plastic deformation when grain sizes are reduced to the nanoscale, we emphasize the importance of the search for the optimal solute additions, which would stabilize the nanocrystalline material against grain growth and, at the same time, effectively suppress the dislocation nucleation from the grain boundaries. △ Less

Submitted 20 December, 2017; originally announced December 2017.

Solute effects on interfacial dislocation emission in nanomaterials: nucleation site competition and neutralization

Authors: Valery Borovikov, Mikhail I. Mendelev, Alexander H. King

Abstract: Interfacial nucleation is the dominant process of dislocation generation during the plastic deformation of nano-crystalline materials. Solute additions intended to stabilize nano-crystalline metals against grain growth, may segregate to the grain boundaries and triple junctions where they can affect the process of the dislocation emission. In this Letter we demonstrate that the effect of solute ad… ▽ More Interfacial nucleation is the dominant process of dislocation generation during the plastic deformation of nano-crystalline materials. Solute additions intended to stabilize nano-crystalline metals against grain growth, may segregate to the grain boundaries and triple junctions where they can affect the process of the dislocation emission. In this Letter we demonstrate that the effect of solute addition in a nano-crystalline material containing competing solute segregation sites and dislocation sources can be very complex due to different rates of segregation at different interfaces. Moreover, at large concentrations, when the solutes form clusters near the grain boundaries or triple junctions, the interfaces between these clusters and the matrix can introduce new dislocation emission sources, which can be activated under lower applied stress. Thus, the strength maximum can occur at a certain solute concentration: adding solutes beyond this optimal solute concentration can reduce the strength of the material. △ Less

Submitted 25 October, 2017; originally announced October 2017.

Comments: 12 pages, 7 figures

Effect of Stacking Fault Energy on Mechanism of Plastic Deformation in Nanotwinned FCC Metals

Authors: Valery Borovikov, Mikhail I. Mendelev, Alexander H. King, Richard LeSar

Abstract: Starting from a semi-empirical potential designed for Cu, we developed a series of potentials that provide essentially constant values of all significant (calculated) materials properties except for the intrinsic stacking fault energy, which varies over a range that encompasses the lowest and highest values observed in nature. These potentials were employed in molecular dynamics (MD) simulations t… ▽ More Starting from a semi-empirical potential designed for Cu, we developed a series of potentials that provide essentially constant values of all significant (calculated) materials properties except for the intrinsic stacking fault energy, which varies over a range that encompasses the lowest and highest values observed in nature. These potentials were employed in molecular dynamics (MD) simulations to investigate how stacking fault energy affects the mechanical behavior of nanotwinned face-centered cubic (fcc) materials. The results indicate that properties such as yield strength and microstructural stability do not vary systematically with stacking fault energy, but rather fall into two distinct regimes corresponding to low and high stacking fault energies. △ Less

Submitted 25 January, 2015; originally announced January 2015.

Reflection and implantation of low energy helium with tungsten surfaces

Authors: Valery Borovikov, Arthur F. Voter, Xian-Zhu Tang

Abstract: Reflection and implantation of low energy helium (He) ions by tungsten (W) substrate are studied using molecular dynamics (MD) simulations. Motivated by the ITER divertor design, our study considers a range of W substrate temperatures (300 K, 1000 K, 1500 K), a range of He atom incidence energies ($\le$100 eV) and a range of angles of incidence ($0^{\circ}$-$75^{\circ}$) with respect to substrate… ▽ More Reflection and implantation of low energy helium (He) ions by tungsten (W) substrate are studied using molecular dynamics (MD) simulations. Motivated by the ITER divertor design, our study considers a range of W substrate temperatures (300 K, 1000 K, 1500 K), a range of He atom incidence energies ($\le$100 eV) and a range of angles of incidence ($0^{\circ}$-$75^{\circ}$) with respect to substrate normal. The MD simulations quantify the reflection and implantation function, the integrated moments such as the particle/energy reflection coefficients and average implantation depths. Distributions of implantation depths, reflected energy, polar and azimuthal angles of reflection are obtained, as functions of simulation parameters, such as W substrate temperature, polar angle of incidence, the energy of incident He, and the type of W substrate surface. Comparison between the MD simulation results, the results obtained using SRIM simulation package, and the existing experimental and theoretical results is provided. △ Less

Submitted 27 January, 2014; v1 submitted 9 January, 2014; originally announced January 2014.

Comments: 51 pages, 6 tables, 27 figures. Submitted to Journal of Nuclear Materials

Step-edge instability during epitaxial growth of graphene from SiC(0001)

Authors: Valery Borovikov, Andrew Zangwill

Abstract: The unique electronic properties of graphene offer the possibility that it could replace silicon when microelectronics evolves to nanoelectronics. Graphene grown epitaxially on silicon carbide is particularly attractive in this regard because SiC is itself a useful semiconductor and, by suitable manipulation of the growth conditions, epitaxial films can be produced that exhibit all the transport… ▽ More The unique electronic properties of graphene offer the possibility that it could replace silicon when microelectronics evolves to nanoelectronics. Graphene grown epitaxially on silicon carbide is particularly attractive in this regard because SiC is itself a useful semiconductor and, by suitable manipulation of the growth conditions, epitaxial films can be produced that exhibit all the transport properties of ideal, two-dimensional graphene desired for device applications. Nevertheless, there is little or no understanding of the actual kinetics of growth, which is likely to be required for future process control. As a step in this direction, we propose a local heat release mechanism to explain finger-like structures observed when graphene is grown by step flow decomposition of SiC(0001). Using a continuum equation of motion for the shape evolution of a moving step, a linear stability analysis predicts whether a shape perturbation of a straight moving step grows or decays as a function of growth temperature, the background pressure of Si maintained during growth, and the effectiveness of an inert buffer gas to retard the escape of Si atoms from the crystal surface. The theory gives semi-quantitative agreement with experiment for the characteristic separation between fingers observed when graphene is grown in a low-pressure induction furnace or under ultrahigh vacuum conditions. △ Less

Submitted 9 July, 2009; originally announced July 2009.

Comments: 4 pages, 5 figures

Step bunching of vicinal 6H-SiC{0001} surfaces

Authors: Valery Borovikov, Andrew Zangwill

Abstract: We use kinetic Monte Carlo simulations to understand growth- and etching-induced step bunching of 6H-SiC{0001} vicinal surfaces oriented towards [1-100] and [11-20]. By taking account of the different rates of surface diffusion on three inequivalent terraces, we reproduce the experimentally observed tendency for single bilayer height steps to bunch into half unit cell height steps. By taking acc… ▽ More We use kinetic Monte Carlo simulations to understand growth- and etching-induced step bunching of 6H-SiC{0001} vicinal surfaces oriented towards [1-100] and [11-20]. By taking account of the different rates of surface diffusion on three inequivalent terraces, we reproduce the experimentally observed tendency for single bilayer height steps to bunch into half unit cell height steps. By taking account of the different mobilities of steps with different structures, we reproduce the experimentally observed tendency for adjacent pairs of half unit cell height steps to bunch into full unit cell height steps. A prediction of our simulations is that growth-induced and etching-induced step bunching lead to different surface terminations for the exposed terraces when full unit cell height steps are present. △ Less

Submitted 11 March, 2009; originally announced March 2009.

Comments: 10 pages, 12 figures

Journal ref: Phys. Rev. B 79, 245413 (2009)

On Budaev and Bogy's approach to diffraction by the 2D traction free elastic wedge

Authors: V. Kamotski, L. Ju. Fradkin, B. A. Samokish, V. A. Borovikov, V. M. Babich

Abstract: Several semianalytical approaches are now available for describing diffraction of a plane wave by the 2D (two dimensional) traction free isotropic elastic wedge. In this paper we follow Budaev and Bogy who reformulated the original diffraction problem as a singular integral one. This comprises two algebraic and two singular integral equations. Each integral equation involves two unknowns, a func… ▽ More Several semianalytical approaches are now available for describing diffraction of a plane wave by the 2D (two dimensional) traction free isotropic elastic wedge. In this paper we follow Budaev and Bogy who reformulated the original diffraction problem as a singular integral one. This comprises two algebraic and two singular integral equations. Each integral equation involves two unknowns, a function and a constant. We discuss the underlying integral operators and develop a new semianalytical scheme for solving the integral equations. We investigate the properties of the obtained solution and argue that it is the solution of the original diffraction problem. We describe a comprehensive code verification and validation programme. △ Less

Submitted 6 April, 2006; originally announced April 2006.

MSC Class: 35J05; 35L05; 44A15; 45Exx; 47B35