Showing 1–10 of 10 results for author: Collaert, N

AlN/Si interface engineering to mitigate RF losses in MOCVD grown GaN-on-Si substrates

Authors: Pieter Cardinael, Sachin Yadav, Herwig Hahn, Ming Zhao, Sourish Banerjee, Babak Kazemi Esfeh, Christof Mauder, Barry O Sullivan, Uthayasankaran Peralagu, Anurag Vohra, Robert Langer, Nadine Collaert, Bertrand Parvais, Jean-Pierre Raskin

Abstract: Fabrication of low-RF loss GaN-on-Si HEMT stacks is critical to enable competitive front-end-modules for 5G and 6G applications. The main contribution to RF losses is the interface between the III-N layer and the HR Si wafer, more specifically the AlN/Si interface. At this interface, a parasitic surface conduction layer exists in Si, which decreases the substrate effective resistivity sensed by ov… ▽ More Fabrication of low-RF loss GaN-on-Si HEMT stacks is critical to enable competitive front-end-modules for 5G and 6G applications. The main contribution to RF losses is the interface between the III-N layer and the HR Si wafer, more specifically the AlN/Si interface. At this interface, a parasitic surface conduction layer exists in Si, which decreases the substrate effective resistivity sensed by overlying circuitry below the nominal Si resistivity. However, a clear understanding of this interface with control of the parasitic channel is lacking. In this letter, a detailed physical and electrical description of MOCVD-grown AlN/Si structures is presented. The presence of a $\text{SiC}_\text{x}\text{N}_\text{y}$ interfacial layer is revealed and its importance for RF losses is shown. Through C-V and I-V characterisation, an increase in the C concentration of this interfacial layer is linked to the formation of negative charge at the AlN/Si interface, which counteracts the positive charge present in the 0-predose limit. The variation of TMAl predose is shown to allow precise tuning of the C composition and, consequently, the resulting interface charge. Notably, a linear relationship between predose and net interface charge is observed and confirmed by the fabrication of an AlN/Si sample with close to zero net charge. In addition, a higher $D_{it}$ ($\sim 2\times 10^{12}$ cm$^\text{-2}$) for such compensated samples is observed and can contribute to low RF loss. An exceptionally high effective resistivity of above 8 k$Ω\cdot$cm is achieved, corresponding to an RF loss below 0.3 dB/mm at 10 GHz. △ Less

Submitted 13 August, 2024; v1 submitted 3 April, 2024; originally announced April 2024.

Comments: The following article has been accepted for publication in Applied Physics Letters. After it is published, it will be found at https://pubs.aip.org/aip/apl

Parasitic Bipolar Leakage in III-V FETs: Impact of Substrate Architecture

Authors: Borna Obradovic, Titash Rakshit, Wei-E Wang, Dennis Lin, Niamh Waldron, Nadine Collaert, Mark S. Rodder

Abstract: InGaAs-based Gate-all-Around (GAA) FETs with moderate to high In content are shown experimentally and theoretically to be unsuitable for low-leakage advanced CMOS nodes. The primary cause for this is the large leakage penalty induced by the Parasitic Bipolar Effect (PBE), which is seen to be particularly difficult to remedy in GAA architectures. Experimental evidence of PBE in In70Ga30As GAA FETs… ▽ More InGaAs-based Gate-all-Around (GAA) FETs with moderate to high In content are shown experimentally and theoretically to be unsuitable for low-leakage advanced CMOS nodes. The primary cause for this is the large leakage penalty induced by the Parasitic Bipolar Effect (PBE), which is seen to be particularly difficult to remedy in GAA architectures. Experimental evidence of PBE in In70Ga30As GAA FETs is demonstrated, along with a simulation-based analysis of the PBE behavior. The impact of PBE is investigated by simulation for alternative device architectures, such as bulk FinFETs and FinFETs-on-insulator. PBE is found to be non-negligible in all standard InGaAs FET designs. Practical PBE metrics are introduced and the design of a substrate architecture for PBE suppression is elucidated. Finally, it is concluded that the GAA architecture is not suitable for low-leakage InGaAs FETs; a bulk FinFET is better suited for the role. △ Less

Submitted 17 May, 2017; originally announced May 2017.

Comments: 8 pages, 17 figures

Electric field reduced charging energies and two-electron bound excited states of single donors in silicon

Authors: R. Rahman, G. P. Lansbergen, J. Verduijn, G. C. Tettamanzi, S. H. Park, N. Collaert, S. Biesemans, G. Klimeck, L. C. L. Hollenberg, S. Rogge

Abstract: We present atomistic simulations of the D0 to D- charging energies of a gated donor in silicon as a function of applied fields and donor depths and find good agreement with experimental measure- ments. A self-consistent field large-scale tight-binding method is used to compute the D- binding energies with a domain of over 1.4 million atoms, taking into account the full bandstructure of the host, a… ▽ More We present atomistic simulations of the D0 to D- charging energies of a gated donor in silicon as a function of applied fields and donor depths and find good agreement with experimental measure- ments. A self-consistent field large-scale tight-binding method is used to compute the D- binding energies with a domain of over 1.4 million atoms, taking into account the full bandstructure of the host, applied fields, and interfaces. An applied field pulls the loosely bound D- electron towards the interface and reduces the charging energy significantly below the bulk values. This enables formation of bound excited D-states in these gated donors, in contrast to bulk donors. A detailed quantitative comparison of the charging energies with transport spectroscopy measurements with multiple samples of arsenic donors in ultra-scaled FinFETs validates the model results and provides physical insights. We also report measured D-data showing for the first time the presence of bound D-excited states under applied fields. △ Less

Submitted 13 July, 2011; originally announced July 2011.

Journal ref: Physical Review B 84, 115428 (2011)

Interface Trap Density Metrology of state-of-the-art undoped Si n-FinFETs

Authors: Giuseppe Carlo Tettamanzi, Abhijeet Paul, Sunhee Lee, Saumitra R. Mehrotra, Nadine Collaert, Serge Biesemans, Gerhard Klimeck, Sven Rogge

Abstract: The presence of interface states at the MOS interface is a well-known cause of device degradation. This is particularly true for ultra-scaled FinFET geometries where the presence of a few traps can strongly influence device behavior. Typical methods for interface trap density (Dit) measurements are not performed on ultimate devices, but on custom designed structures. We present the first set of me… ▽ More The presence of interface states at the MOS interface is a well-known cause of device degradation. This is particularly true for ultra-scaled FinFET geometries where the presence of a few traps can strongly influence device behavior. Typical methods for interface trap density (Dit) measurements are not performed on ultimate devices, but on custom designed structures. We present the first set of methods that allow direct estimation of Dit in state-of-the-art FinFETs, addressing a critical industry need. △ Less

Submitted 11 November, 2010; originally announced November 2010.

Comments: 9 pages, 4 figures, *G.C.T. and A.P. contributed equally to this work

Lifetime enhanced transport in silicon due to spin and valley blockade

Authors: G. P. Lansbergen, R. Rahman, J. Verduijn, G. C. Tettamanzi, N. Collaert, S. Biesemans, G. Klimeck, L. C. L. Hollenberg, S. Rogge

Abstract: We report the observation of Lifetime Enhanced Transport (LET) based on perpendicular valleys in silicon by transport spectroscopy measurements of a two-electron system in a silicon transistor. The LET is manifested as a peculiar current step in the stability diagram due to a forbidden transition between an excited state and any of the lower energy states due perpendicular valley (and spin) config… ▽ More We report the observation of Lifetime Enhanced Transport (LET) based on perpendicular valleys in silicon by transport spectroscopy measurements of a two-electron system in a silicon transistor. The LET is manifested as a peculiar current step in the stability diagram due to a forbidden transition between an excited state and any of the lower energy states due perpendicular valley (and spin) configurations, offering an additional current path. By employing a detailed temperature dependence study in combination with a rate equation model, we estimate the lifetime of this particular state to exceed 48 ns. The two-electron spin-valley configurations of all relevant confined quantum states in our device were obtained by a large-scale atomistic tight-binding simulation. The LET acts as a signature of the complicated valley physics in silicon; a feature that becomes increasingly important in silicon quantum devices. △ Less

Submitted 19 July, 2011; v1 submitted 8 August, 2010; originally announced August 2010.

Comments: 4 pages, 4 figures. (The current version (v3) is the result of splitting up the previous version (v2), and has been completely rewritten)

Journal ref: Physical Review Letters 107, 136602 (2011)

Thermionic Emission as a tool to study transport in undoped nFinFETs

Authors: Giuseppe C. Tettamanzi, Abhijeet Paul, Gabriel P. Lansbergen, Jan Verduijn, Sunhee Lee, Nadine Collaert, Serge Biesemans, Gerhard Klimeck, Sven Rogge

Abstract: Thermally activated sub-threshold transport has been investigated in undoped triple gate MOSFETs. The evolution of the barrier height and of the active cross-section area of the channel as a function of gate voltage has been determined. The results of our experiments and of the Tight Binding simulations we have developed are both in good agreement with previous analytical calculations, confirming… ▽ More Thermally activated sub-threshold transport has been investigated in undoped triple gate MOSFETs. The evolution of the barrier height and of the active cross-section area of the channel as a function of gate voltage has been determined. The results of our experiments and of the Tight Binding simulations we have developed are both in good agreement with previous analytical calculations, confirming the validity of thermionic approach to investigate transport in FETs. This method provides an important tool for the improvement of devices characteristics. △ Less

Submitted 29 March, 2010; originally announced March 2010.

Comments: 3 pages, 3 figure, 1 table

Journal ref: IEEE Electron Device Letters 21 (2010) 150

Coherent transport through a double donor system in silicon

Authors: J. Verduijn, G. C. Tettamanzi, G. P. Lansbergen, N. Collaert, S. Biesemans, S. Rogge

Abstract: Quantum coherence is of crucial importance for the applicability of donor based quantum computing. In this Letter we describe the observation of the interference of conduction paths induced by two donors in a nano-MOSFET resulting in a Fano resonance. This demonstrates the coherent exchange of electrons between two donors. In addition, the phase difference between the two conduction paths can be… ▽ More Quantum coherence is of crucial importance for the applicability of donor based quantum computing. In this Letter we describe the observation of the interference of conduction paths induced by two donors in a nano-MOSFET resulting in a Fano resonance. This demonstrates the coherent exchange of electrons between two donors. In addition, the phase difference between the two conduction paths can be tuned by means of a magnetic field, in full analogy to the Aharonov-Bohm effect. △ Less

Submitted 11 December, 2009; originally announced December 2009.

Tunable Kondo effect in a single donor atom

Authors: G. P. Lansbergen, G. C. Tettamanzi, J. Verduijn, N. Collaert, S. Biesemans, M. Blaauboer, S. Rogge

Abstract: The Kondo effect has been observed in a single gate-tunable atom. The measurement device consists of a single As dopant incorporated in a Silicon nanostructure. The atomic orbitals of the dopant are tunable by the gate electric field. When they are tuned such that the ground state of the atomic system becomes a (nearly) degenerate superposition of two of the Silicon valleys, an exotic and hither… ▽ More The Kondo effect has been observed in a single gate-tunable atom. The measurement device consists of a single As dopant incorporated in a Silicon nanostructure. The atomic orbitals of the dopant are tunable by the gate electric field. When they are tuned such that the ground state of the atomic system becomes a (nearly) degenerate superposition of two of the Silicon valleys, an exotic and hitherto unobserved valley Kondo effect appears. Together with the regular spin Kondo, the tunable valley Kondo effect allows for reversible electrical control over the symmetry of the Kondo ground state from an SU(2)- to an SU(4) -configuration. △ Less

Submitted 30 September, 2009; originally announced September 2009.

Comments: 10 pages, 8 figures

Journal ref: Nano Letters 10 (2), 455-460 (2010)

Transport spectroscopy of a single dopant in a gated silicon nanowire

Authors: H. Sellier, G. P. Lansbergen, J. Caro, N. Collaert, I. Ferain, M. Jurczak, S. Biesemans, S. Rogge

Abstract: We report on spectroscopy of a single dopant atom in silicon by resonant tunneling between source and drain of a gated nanowire etched from silicon on insulator. The electronic states of this dopant isolated in the channel appear as resonances in the low temperature conductance at energies below the conduction band edge. We observe the two possible charge states successively occupied by spin-up… ▽ More We report on spectroscopy of a single dopant atom in silicon by resonant tunneling between source and drain of a gated nanowire etched from silicon on insulator. The electronic states of this dopant isolated in the channel appear as resonances in the low temperature conductance at energies below the conduction band edge. We observe the two possible charge states successively occupied by spin-up and spin-down electrons under magnetic field. The first resonance is consistent with the binding energy of the neutral $D^0$ state of an arsenic donor. The second resonance shows a reduced charging energy due to the electrostatic coupling of the charged $D^-$ state with electrodes. Excited states and Zeeman splitting under magnetic field present large energies potentially useful to build atomic scale devices. △ Less

Submitted 13 November, 2006; v1 submitted 7 August, 2006; originally announced August 2006.

Comments: accepted for publication in Phys. Rev. Lett

Journal ref: Phys. Rev. Lett. 97, 206805 (2006)

Sub-threshold channels at the edges of nanoscale triple-gate silicon transistors

Authors: H. Sellier, G. P. Lansbergen, J. Caro, N. Collaert, I. Ferain, M. Jurczak, S. Biesemans, S. Rogge

Abstract: We investigate by low-temperature transport experiments the sub-threshold behavior of triple-gate silicon field-effect transistors. These three-dimensional nano-scale devices consist of a lithographically defined silicon nanowire surrounded by a gate with an active region as small as a few tens of nanometers, down to 50x60x35 nm^3. Conductance versus gate voltage show Coulomb-blockade oscillatio… ▽ More We investigate by low-temperature transport experiments the sub-threshold behavior of triple-gate silicon field-effect transistors. These three-dimensional nano-scale devices consist of a lithographically defined silicon nanowire surrounded by a gate with an active region as small as a few tens of nanometers, down to 50x60x35 nm^3. Conductance versus gate voltage show Coulomb-blockade oscillations with a large charging energy due to the formation of a small potential well below the gate. According to dependencies on device geometry and thermionic current analysis, we conclude that sub-threshold channels, a few nanometers wide, appear at the nanowire edges, hence providing an experimental evidence for the corner-effect. △ Less

Submitted 5 March, 2007; v1 submitted 16 March, 2006; originally announced March 2006.

Journal ref: Appl. Phys. Lett. 90, 073502 (2007)