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CMOS-Compatible Ultrathin Superconducting NbN Thin Films Deposited by Reactive Ion Sputtering on 300 mm Si Wafer
Authors:
Zihao Yang,
Xiucheng Wei,
Pinku Roy,
Di Zhang,
Ping Lu,
Samyak Dhole,
Haiyan Wang,
Nicholas Cucciniello,
Nag Patibandla,
Zhebo Chen,
Hao Zeng,
Quanxi Jia,
Mingwei Zhu
Abstract:
We report a milestone in achieving large-scale, ultrathin (~5 nm) superconducting NbN thin films on 300 mm Si wafers using a high-volume manufacturing (HVM) industrial physical vapor deposition (PVD) system. The NbN thin films possess remarkable structural uniformity and consistently high superconducting quality across the entire 300 mm Si wafer, by incorporating an AlN buffer layer. High-resoluti…
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We report a milestone in achieving large-scale, ultrathin (~5 nm) superconducting NbN thin films on 300 mm Si wafers using a high-volume manufacturing (HVM) industrial physical vapor deposition (PVD) system. The NbN thin films possess remarkable structural uniformity and consistently high superconducting quality across the entire 300 mm Si wafer, by incorporating an AlN buffer layer. High-resolution X-ray diffraction and transmission electron microscopy analyses unveiled enhanced crystallinity of (111)-oriented δ-phase NbN with the AlN buffer layer. Notably, NbN films deposited on AlN-buffered Si substrates exhibited a significantly elevated superconducting critical temperature (~2 K higher for the 10 nm NbN) and a higher upper critical magnetic field or Hc2 (34.06 T boost in Hc2 for the 50 nm NbN) in comparison with those without AlN. These findings present a promising pathway for the integration of quantum-grade superconducting NbN films with the existing 300 mm CMOS Si platform for quantum information applications.
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Submitted 10 August, 2024;
originally announced August 2024.
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Autonomous UAV for Building Monitoring, Detection and Localisation of Faults
Authors:
Suhas Thalanki,
T Vijay Prashant,
Harshith Kumar M B,
Shayak Bhadraray,
Aravind S,
Srikrishna BR,
Sameer Dhole
Abstract:
Collapsing of structural buildings has been sighted commonly and the presence of potential faults has proved to be damaging to the buildings, resulting in accidents. It is essential to continuously monitor any building for faults where human access is restricted. With UAVs (Unmanned Aerial Vehicles) emerging in the field of computer vision, monitoring any building and detecting such faults is seen…
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Collapsing of structural buildings has been sighted commonly and the presence of potential faults has proved to be damaging to the buildings, resulting in accidents. It is essential to continuously monitor any building for faults where human access is restricted. With UAVs (Unmanned Aerial Vehicles) emerging in the field of computer vision, monitoring any building and detecting such faults is seen as a possibility. This paper puts forth a novel approach where an automated UAV traverses around the target building, detects any potential faults in the building, and localizes the faults. With the dimensions of the building provided, a path around the building is generated. The images captured by the onboard camera of the UAV are passed through a neural network system to confirm the presence of faults. Once a fault is detected, the UAV maneuvers itself to the corresponding position where the crack is detected. The simulation is done with ROS(Robot Operating System) using the AirSim environment which initializes ROS Wrappers and provides an integrated interface of ROS and AirSim to work with, The UAV is simulated in the same.
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Submitted 13 November, 2021;
originally announced November 2021.
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Chalcogenide perovskite BaZrS3 thin-film electronic and optoelectronic devices by low temperature processing
Authors:
Zhonghai Yu,
Xiucheng Wei,
Yixiong Zheng,
Haolei Hui,
Mengying Bian,
Samyak Dhole,
Jung-Hun Seo,
Yi-Yang Sun,
Quanxi Jia,
Shengbai Zhang,
Sen Yang,
Hao Zeng
Abstract:
Owing to its superior visible light absorption and high chemical stability, chalcogenide perovskite barium zirconium sulfide has attracted significant attention in the past few years as a potential alternative to hybrid halide perovskites for optoelectronics. However, the high processing temperatures of BaZrS3 thin films at above 1000 C severely limits their potential for device applications. Here…
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Owing to its superior visible light absorption and high chemical stability, chalcogenide perovskite barium zirconium sulfide has attracted significant attention in the past few years as a potential alternative to hybrid halide perovskites for optoelectronics. However, the high processing temperatures of BaZrS3 thin films at above 1000 C severely limits their potential for device applications. Herein, we report the synthesis of BaZrS3 thin films at temperatures as low as 500 C, by changing the chemical reaction pathway. The single phase BaZrS3 thin film was confirmed by X-ray diffraction and Raman spectroscopies. Atomic force microscopy and scanning electron microscopy show that crystalline size and surface roughness were consistently reduced with decreasing annealing temperature. The lower temperatures further eliminate sulfur vacancies and carbon contaminations associated with high temperature processing. The ability to synthesize chalcogenide perovskite thin films at lower temperatures removes a major hurdle for their device fabrication. The photodetectors demonstrate fast response and an on/off ratio of 80. The fabricated field effect transistors show an ambipolar behavior with electron and hole mobilities of 16.8 cm2/Vs and 2.6 cm2/Vs, respectively.
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Submitted 16 April, 2021; v1 submitted 20 February, 2021;
originally announced February 2021.
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Large-Size Free-Standing Single-crystal b-Ga2O3 Membranes Fabricated by Hydrogen Implantation and Lift-Off
Authors:
Yixiong Zheng,
Zixuan Feng,
A F M Anhar Uddin Bhuiyan,
Lingyu Meng,
Samyak Dhole,
Quanxi Jia,
Hongping Zhao,
Jung-Hun Seo
Abstract:
In this paper, we have demonstrated the large-size free-standing single-crystal b-Ga2O3 NMs fabricated by the hydrogen implantation and lift-off process directly from MOCVD grown b-Ga2O3 epifilms on native substrates. The optimum implantation conditions were simulated with a Monte-Carlo simulation to obtain the high hydrogen concentration with a narrow ion distribution at the desired depth. Two as…
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In this paper, we have demonstrated the large-size free-standing single-crystal b-Ga2O3 NMs fabricated by the hydrogen implantation and lift-off process directly from MOCVD grown b-Ga2O3 epifilms on native substrates. The optimum implantation conditions were simulated with a Monte-Carlo simulation to obtain the high hydrogen concentration with a narrow ion distribution at the desired depth. Two as grown b-Ga2O3 samples with different orientation ([100] and [001]) were used and successfully create 1.2 um thick b-Ga2O3 NMs without any physical damages. These b-Ga2O3 NMs were then transfer-printed onto rigid and flexible substrates such as SiC substrate and polyimide substrate. Various material characterizations were performed to investigate the crystal quality, surface morphology, optical property, mechanical property, and bandgap before and after the lift-off and revealed that good material quality is maintained. This result offers several benefits in that the thickness, doping, and size of b-Ga2O3 NMs can be fully controlled. Moreover, more advanced b-Ga2O3-based NM structures such as (AlxGa1-x)2O3/Ga2O3 heterostructure NMs can be directly created from their bulk epitaxy substrates thus this result provides a viable route for the realization of high performance b-Ga2O3 NM-based electronics and optoelectronics that can be built on various substrates and platforms.
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Submitted 11 February, 2021;
originally announced February 2021.
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Gene drive dynamics in natural populations: The importance of density-dependence, space and sex
Authors:
Sumit Dhole,
Alun L Lloyd,
Fred Gould
Abstract:
The spread of synthetic gene drives is often discussed in the context of panmictic populations connected by gene flow and described with simple deterministic models. Under such assumptions, an entire species could be altered by releasing a single individual carrying an invasive gene drive, such as a standard homing drive. While this remains a theoretical possibility, gene drive spread in natural p…
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The spread of synthetic gene drives is often discussed in the context of panmictic populations connected by gene flow and described with simple deterministic models. Under such assumptions, an entire species could be altered by releasing a single individual carrying an invasive gene drive, such as a standard homing drive. While this remains a theoretical possibility, gene drive spread in natural populations is more complex and merits a more realistic assessment. The fate of any gene drive released in a population would be inextricably linked to the ecology of the population. Given the uncertainty often involved in ecological assessment of natural populations, understanding the sensitivity of gene drive spread to important ecological factors is critical. Here we review how different forms of density-dependence, spatial heterogeneity and mating behaviors can impact the spread of self-sustaining gene drives. We highlight specific aspects of gene drive dynamics and the target populations that need further research.
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Submitted 4 May, 2020;
originally announced May 2020.
