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Orbital contributions in the element-resolved valence electronic structure of Bi2Se3
Authors:
Cheng-Tai Kuo,
Shih-Chieh Lin,
Jean-Pascal Rueff,
Zhesheng Chen,
Irene Aguilera,
Gustav Bihlmayer,
Lukasz Plucinski,
Ismael L. Graff,
Giuseppina Conti,
Ivan A. Vartanyants,
Claus M. Schneider,
Charles S. Fadley
Abstract:
In this work, we studied the bulk band structure of a topological insulator (TI) Bi2Se3 and determined the contributions of the Bi and Se orbital states to the valence bands using standing wave-excited hard x-ray photoemission spectroscopy (SW-HAXPES). This SW technique can provide the element-resolved information and extract individual Bi and Se contributions to the Bi2Se3 valence band. Compariso…
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In this work, we studied the bulk band structure of a topological insulator (TI) Bi2Se3 and determined the contributions of the Bi and Se orbital states to the valence bands using standing wave-excited hard x-ray photoemission spectroscopy (SW-HAXPES). This SW technique can provide the element-resolved information and extract individual Bi and Se contributions to the Bi2Se3 valence band. Comparisons with density functional theory (DFT) calculations (LDA and GW) reveal that the Bi 6s, Bi 6p, and Se 4p states are dominant in the Bi2Se3 HAXPES valence band. These findings pave a way for studying the element-resolved band structure and orbital contributions of this class of TIs.
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Submitted 7 December, 2021; v1 submitted 3 August, 2021;
originally announced August 2021.
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Hard x-ray standing-wave photoemission study of the interfaces in a BiFeO$_3$/La$_{0.7}$Sr$_{0.3}$MnO$_3$ superlattice
Authors:
H. P. Martins,
S. A. Khan,
G. Conti,
A. A. Greer,
A. Y. Saw,
G. K. Palsson,
M. Huijben,
K. Kobayashi,
S. Ueda,
C. M. Schneider,
I. M. Vishik,
J. Minár,
A. X. Gray,
C. S. Fadley,
S. Nemšák
Abstract:
Hybrid multiferroics such as BiFeO$_3$ (BFO) and La$_{0.7}$Sr$_{0.3}$MnO$_3$ (LSMO) heterostructures are highly interesting functional systems due to their complex electronic and magnetic properties. One of the key parameters influencing the emergent properties is the quality of interfaces, where varying interdiffusion lengths can give rise to different chemistry and distinctive electronic states.…
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Hybrid multiferroics such as BiFeO$_3$ (BFO) and La$_{0.7}$Sr$_{0.3}$MnO$_3$ (LSMO) heterostructures are highly interesting functional systems due to their complex electronic and magnetic properties. One of the key parameters influencing the emergent properties is the quality of interfaces, where varying interdiffusion lengths can give rise to different chemistry and distinctive electronic states. Here we report high-resolution depth resolved chemical and electronic investigation of BFO/LSMO superlattice using standing-wave hard X-ray photoemission spectroscopy in the first-order Bragg as well as near-total-reflection geometry. Our results show that the interfaces of BFO on top of LSMO are atomically abrupt, while the LSMO on top of BFO interfaces show an interdiffusion length of around 1.2 unit cells. The two interfaces also exhibit different chemical gradients, with the BFO/LSMO interface being Sr-terminated by a spectroscopically distinctive high binding energy component in Sr 2p core-level spectra, which is spatially contained within 1 unit cell from the interface. From the electronic point of view, unique valence band features were observed for bulk-BFO, bulk-LSMO and their interfaces. Our X-ray optical analysis revealed a unique electronic signature at the BFO/LSMO interface, which we attribute to the coupling between those respective layers. Valence band decomposition based on the Bragg-reflection standing-wave measurement also revealed the band alignment between BFO and LSMO layers. Our work demonstrates that standing-wave hard x-ray photoemission is a reliable non-destructive technique for probing depth-resolved electronic structure of buried layers and interfaces with sub-unit-cell resolution. Equivalent investigations can be successfully applied to a broad class of material such as perovskite complex oxides with emergent interfacial phenomena.
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Submitted 14 December, 2020;
originally announced December 2020.
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Bulk Electronic Structure of Lanthanum Hexaboride (LaB6) by Hard X-ray Angle-Resolved Photoelectron Spectroscopy
Authors:
A. Rattanachata,
L. Nicolaï,
H. P. Martins,
G. Conti,
M. J. Verstraete,
M. Gehlmann,
S. Ueda,
K. Kobayashi,
I. Vishik,
C. M. Schneider,
C. S. Fadley,
A. X. Gray,
J. Minár,
S. Nemšák
Abstract:
In the last decade rare-earth hexaborides have been investigated for their fundamental importance in condensed matter physics, and for their applications in advanced technological fields. Among these compounds, LaB$_6$ has a special place, being a traditional d-band metal without additional f- bands. In this paper we investigate the bulk electronic structure of LaB$_6$ using hard x-ray photoemissi…
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In the last decade rare-earth hexaborides have been investigated for their fundamental importance in condensed matter physics, and for their applications in advanced technological fields. Among these compounds, LaB$_6$ has a special place, being a traditional d-band metal without additional f- bands. In this paper we investigate the bulk electronic structure of LaB$_6$ using hard x-ray photoemission spectroscopy, measuring both core-level and angle-resolved valence-band spectra. By comparing La 3d core level spectra to cluster model calculations, we identify well-screened peak residing at a lower binding energy compared to the main poorly-screened peak; the relative intensity between these peaks depends on how strong the hybridization is between La and B atoms. We show that the recoil effect, negligible in the soft x-ray regime, becomes prominent at higher kinetic energies for lighter elements, such as boron, but is still negligible for heavy elements, such as lanthanum. In addition, we report the bulk-like band structure of LaB$_6$ determined by hard x-ray angle-resolved photoemission spectroscopy (HARPES). We interpret HARPES experimental results by the free-electron final-state calculations and by the more precise one-step photoemission theory including matrix element and phonon excitation effects. In addition, we consider the nature and the magnitude of phonon excitations in HARPES experimental data measured at different temperatures and excitation energies. We demonstrate that one step theory of photoemission and HARPES experiments provide, at present, the only approach capable of probing true bulk-like electronic band structure of rare-earth hexaborides and strongly correlated materials.
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Submitted 6 January, 2021; v1 submitted 4 December, 2020;
originally announced December 2020.
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Two-dimensional electron systems in perovskite oxide heterostructures: Role of the polarity-induced substitutional defects
Authors:
Shih-Chieh Lin,
Cheng-Tai Kuo,
Yu-Cheng Shao,
Yi-De Chuang,
Jaap Geessinck,
Mark Huijben,
Jean-Pascal Rueff,
Ismael L. Graff,
Giuseppina Conti,
Yingying Peng,
Aaron Bostwick,
Eli Rotenberg,
Eric Gullikson,
Slavomír Nemšák,
Arturas Vailionis,
Nicolas Gauquelin,
Johan Verbeeck,
Giacomo Ghiringhelli,
Claus M. Schneider,
Charles S. Fadley
Abstract:
The discovery of a two-dimensional electron system (2DES) at the interfaces of perovskite oxides such as LaAlO3 and SrTiO3 has motivated enormous efforts in engineering interfacial functionalities with this type of oxide heterostructures. However, its fundamental origins are still not understood, e.g. the microscopic mechanisms of coexisting interface conductivity and magnetism. Here we report a c…
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The discovery of a two-dimensional electron system (2DES) at the interfaces of perovskite oxides such as LaAlO3 and SrTiO3 has motivated enormous efforts in engineering interfacial functionalities with this type of oxide heterostructures. However, its fundamental origins are still not understood, e.g. the microscopic mechanisms of coexisting interface conductivity and magnetism. Here we report a comprehensive spectroscopic investigation of the depth profile of 2DES-relevant Ti 3d interface carriers using depth- and element-specific techniques, standing-wave excited photoemission and resonant inelastic scattering. We found that one type of Ti 3d interface carriers, which give rise to the 2DES are located within 3 unit cells from the n-type interface in the SrTiO3 layer. Unexpectedly, another type of interface carriers, which are polarity-induced Ti-on-Al antisite defects, reside in the first 3 unit cells of the opposing LaAlO3 layer (~10 Å). Our findings provide a microscopic picture of how the localized and mobile Ti 3d interface carriers distribute across the interface and suggest that the 2DES and 2D magnetism at the LaAlO3/SrTiO3 interface have disparate explanations as originating from different types of interface carriers.
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Submitted 29 October, 2020; v1 submitted 21 December, 2019;
originally announced December 2019.
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Hard x-ray standing-wave photoemission insights into the structure of an epitaxial Fe/MgO multilayer magnetic tunnel junction
Authors:
C. S. Conlon,
G. Conti,
S. Nemšák,
G. Palsson,
R. Moubah,
C. -T. Kuo,
M. Gehlmann,
J. Ciston,
J. Rault,
J. -P. Rueff,
F. Salmassi,
W. Stolte,
A. Rattanachata,
S. -C. Lin,
A. Keqi,
A. Saw,
B. Hjörvarsson,
C. S. Fadley
Abstract:
The Fe/MgO magnetic tunnel junction is a classic spintronic system, with current importance technologically, and interest for future innovation. The key magnetic properties are linked directly to the structure of hard-to-access buried interfaces, and the Fe and MgO components near the surface are unstable when exposed to air, making a deeper probing, non-destructive, in-situ measurement ideal for…
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The Fe/MgO magnetic tunnel junction is a classic spintronic system, with current importance technologically, and interest for future innovation. The key magnetic properties are linked directly to the structure of hard-to-access buried interfaces, and the Fe and MgO components near the surface are unstable when exposed to air, making a deeper probing, non-destructive, in-situ measurement ideal for this system. We have thus applied hard x-ray photoemission spectroscopy (HXPS) and standing-wave (SW) HXPS in the few keV energy range to probe the structure of an epitaxially-grown MgO/Fe superlattice. The superlattice consists of 9 repeats of MgO grown on Fe by magnetron sputtering on an MgO (001) substrate, with a protective Al2O3 capping layer. We determine through SW-HXPS that 8 of the 9 repeats are similar and ordered, with a period of 33 $\pm$ 4 angstrom, with minor presence of FeO at the interfaces and a significantly distorted top bilayer with ca. 3 times the oxidation of the lower layers at the top MgO/Fe interface. There is evidence of asymmetrical oxidation on the top and bottom of the Fe layers. We find agreement with dark-field scanning transmission electron microscope (STEM) and x-ray reflectivity measurements. Through the STEM measurements we confirm an overall epitaxial stack with dislocations and warping at the interfaces of ca. 5 angstrom. We also note a distinct difference in the top bilayer, especially MgO, with possible Fe inclusions. We thus demonstrate that SW-HXPS can be used to probe deep buried interfaces of novel magnetic devices with few angstrom precision.
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Submitted 25 June, 2019; v1 submitted 10 April, 2019;
originally announced April 2019.
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Resonant photoemission with circular polarized light on magnetized LSMO
Authors:
M. C. Richter,
O. Heckmann,
B. S. Mun,
C. S. Fadley,
B. Mercey,
K. Hricovini
Abstract:
We have used resonant photoemission with circular polarized light as a new tool to obtain information about the electronic structure of half-metals. After careful sample surface preparation of La0.7Sr0.3MnO3, we have obtained a dichroic signal for the L2,3 absorption of Mn. Working with a magnetized sample and circular polarized light we observe a clear effect of the helicity of light on the posit…
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We have used resonant photoemission with circular polarized light as a new tool to obtain information about the electronic structure of half-metals. After careful sample surface preparation of La0.7Sr0.3MnO3, we have obtained a dichroic signal for the L2,3 absorption of Mn. Working with a magnetized sample and circular polarized light we observe a clear effect of the helicity of light on the position of the resonant Raman-Auger photoelectrons from the Mn 2p3p3d decay. These results allow us to achieve a rough estimate of the half-metallic spin half-gap.
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Submitted 5 June, 2018;
originally announced June 2018.
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Interface properties and built-in potential profile of a LaCrO$_3$/SrTiO$_3$ superlattice determined by standing-wave excited photoemission spectroscopy
Authors:
Shih-Chieh Lin,
Cheng-Tai Kuo,
Ryan B. Comes,
Julien E. Rault,
Jean-Pascal Rueff,
Slavomir Nemšák,
Amina Taleb,
Jeffrey B. Kortright,
Julia Meyer-Ilse,
Eric Gullikson,
Peter V. Sushko,
Steven R. Spurgeon,
Mathias Gehlmann,
Mark E. Bowden,
Lukasz Plucinski,
Scott A. Chambers,
Charles S. Fadley
Abstract:
LaCrO$_3$ (LCO) / SrTiO$_3$ (STO) heterojunctions are intriguing due to a polar discontinuity along (001), two distinct and controllable interface structures [(LaO)$^+$/(TiO$_2$)$^0$ and (SrO)$^0$/(CrO$_2$)$^-$], and interface-induced polarization. In this study, we have used soft- and hard x-ray standing-wave excited photoemission spectroscopy (SW-XPS) to generate a quantitative determination of…
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LaCrO$_3$ (LCO) / SrTiO$_3$ (STO) heterojunctions are intriguing due to a polar discontinuity along (001), two distinct and controllable interface structures [(LaO)$^+$/(TiO$_2$)$^0$ and (SrO)$^0$/(CrO$_2$)$^-$], and interface-induced polarization. In this study, we have used soft- and hard x-ray standing-wave excited photoemission spectroscopy (SW-XPS) to generate a quantitative determination of the elemental depth profiles and interface properties, band alignments, and the depth distribution of the interface-induced built-in potentials in the two constituent oxides. We observe an alternating charged interface configuration: a positively charged (LaO)$^+$/(TiO$_2$)$^0$ intermediate layer at the LCO$_\textbf{top}$/STO$_\textbf{bottom}$ interface and a negatively charged (SrO)$^0$/(CrO$_2$)$^-$ intermediate layer at the STO$_\textbf{top}$/LCO$_\textbf{bottom}$ interface. Using core-level SW data, we have determined the depth distribution of species, including through the interfaces, and these results are in excellent agreement with scanning transmission electron microscopy and electron energy loss spectroscopy (STEM-EELS) mapping of local structure and composition. SW-XPS also enabled deconvolution of the LCO-contributed and STO- contributed matrix-element-weighted density of states (MEWDOSs) from the valence band (VB) spectra for the LCO/STO superlattice (SL). Monitoring the VB edges of the deconvoluted MEWDOS shifts with a change in probing profile, the alternating charge- induced built-in potentials are observed in both constituent oxides. Finally, using a two-step simulation approach involving first core-level binding energy shifts and then valence-band modeling, the built-in potential gradients across the SL are resolved in detail and represented by the depth distribution of VB edges.
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Submitted 31 August, 2018; v1 submitted 27 February, 2018;
originally announced February 2018.
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Depth-resolved resonant inelastic x-ray scattering at a superconductor/half-metallic ferromagnet interface through standing-wave excitation
Authors:
Cheng-Tai Kuo,
Shih-Chieh Lin,
Giacomo Ghiringhelli,
Yingying Peng,
Gabriella Maria De Luca,
Daniele Di Castro,
Davide Betto,
Mathias Gehlmann,
Tom Wijnands,
Mark Huijben,
Julia Meyer-Ilse,
Eric Gullikson,
Jeffrey B. Kortright,
Arturas Vailionis,
Nicolas Gauquelin,
Johan Verbeeck,
Timm Gerber,
Giuseppe Balestrino,
Nicholas B. Brookes,
Lucio Braicovich,
Charles S. Fadley
Abstract:
We demonstrate that combining standing-wave (SW) excitation with resonant inelastic x-ray scattering (RIXS) can lead to depth resolution and interface sensitivity for studying orbital and magnetic excitations in correlated oxide heterostructures. SW-RIXS has been applied to multilayer heterostructures consisting of a superconductor La$_{1.85}$Sr$_{0.15}$CuO$_{4}$(LSCO) and a half-metallic ferromag…
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We demonstrate that combining standing-wave (SW) excitation with resonant inelastic x-ray scattering (RIXS) can lead to depth resolution and interface sensitivity for studying orbital and magnetic excitations in correlated oxide heterostructures. SW-RIXS has been applied to multilayer heterostructures consisting of a superconductor La$_{1.85}$Sr$_{0.15}$CuO$_{4}$(LSCO) and a half-metallic ferromagnet La$_{0.67}$Sr$_{0.33}$MnO$_{3}$ (LSMO). Easily observable SW effects on the RIXS excitations were found in these LSCO/LSMO multilayers. In addition, we observe different depth distribution of the RIXS excitations. The magnetic excitations are found to arise from the LSCO/LSMO interfaces, and there is also a suggestion that one of the dd excitations comes from the interfaces. SW-RIXS measurements of correlated-oxide and other multilayer heterostructures should provide unique layer-resolved insights concerning their orbital and magnetic excitations, as well as a challenge for RIXS theory to specifically deal with interface effects.
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Submitted 6 December, 2018; v1 submitted 27 February, 2018;
originally announced February 2018.
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Element- and momentum-resolved electronic structure of the dilute magnetic semiconductor manganese doped gallium arsenide
Authors:
Slavomír Nemšák,
Mathias Gehlmann,
Cheng-Tai Kuo,
Shih-Chieh Lin,
Christoph Schlueter,
Ewa Mlynczak,
Tien-Lin Lee,
Lukasz Plucinski,
Hubert Ebert,
Igor Di Marco,
Ján Minár,
Claus M. Schneider,
Charles S. Fadley
Abstract:
The dilute magnetic semiconductors have promise in spin-based electronics applications due to their potential for ferromagnetic order at room temperature, and various unique switching and spin-dependent conductivity properties. However, the precise mechanism by which the transition-metal doping produces ferromagnetism has been controversial. Here we have studied a dilute magnetic semiconductor (5%…
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The dilute magnetic semiconductors have promise in spin-based electronics applications due to their potential for ferromagnetic order at room temperature, and various unique switching and spin-dependent conductivity properties. However, the precise mechanism by which the transition-metal doping produces ferromagnetism has been controversial. Here we have studied a dilute magnetic semiconductor (5% manganese-doped gallium arsenide) with Bragg-reflection standing-wave hard X-ray angle-resolved photoemission spectroscopy, and resolved its electronic structure into element- and momentum- resolved components. The measured valence band intensities have been projected into element-resolved components using analogous energy scans of Ga 3d, Mn 2p, and As 3d core levels, with results in excellent agreement with element-projected Bloch spectral functions and clarification of the electronic structure of this prototypical material. This technique should be broadly applicable to other multi-element materials.
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Submitted 12 September, 2018; v1 submitted 19 January, 2018;
originally announced January 2018.
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Unexpected Termination Switching and Polarity Compensation in LaAlO3/SrTiO3 heterostructures
Authors:
Guneeta Singh-Bhalla,
Pim B. Rossen,
Gunnar K. Palsson,
Jaganatha S. Suresha,
Di Yi,
Abhigyan Dasgupta,
David Doenning,
Victor G. Ruiz,
Ajay K. Yadav,
Morgan Trassin,
John T. Heron,
Charles S. Fadley,
Rossitza Pentcheva,
Jayakanth Ravichandran,
Ramamoorthy Ramesh
Abstract:
Polar crystals composed of charged ionic planes cannot exist in nature without acquiring surface changes to balance an ever-growing dipole. The necessary changes can manifest structurally or electronically. An electronic asymetry has long been observed in the LaAlO3/SrTiO3 system. Electron accumulation is observed near the LaAlO3/TiO2-SrTiO3 interface, while the LaAlO3/SrO-SrTiO3 stack is insulati…
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Polar crystals composed of charged ionic planes cannot exist in nature without acquiring surface changes to balance an ever-growing dipole. The necessary changes can manifest structurally or electronically. An electronic asymetry has long been observed in the LaAlO3/SrTiO3 system. Electron accumulation is observed near the LaAlO3/TiO2-SrTiO3 interface, while the LaAlO3/SrO-SrTiO3 stack is insulating. Here, we observe evidence for an asymmetry in the surface chemical termination for nominally stoichiometric LaAlO3 films in contact with the two different surface layers of SrTiO3 crystals, TiO2 and SrO. Using several element specific probes, we find that the surface termination of LaAlO3 remains AlO2 irrespective of the starting termination of SrTiO3 substrate surface. We use a combination of cross-plane tunneling measurements and first principles calcula- tions to understand the effects of this unexpected termination on band alignments and polarity compensation of LaAlO3/SrTiO3 heterostructures. An asymmetry in LaAlO3 polarity compensation and resulting electronic properties will fundamentally limit atomic level control of oxide heterostructures.
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Submitted 18 January, 2018;
originally announced January 2018.
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Characterization of free standing InAs quantum membranes by standing wave hard x-ray photoemission spectroscopy
Authors:
G. Conti,
S. Nemšák,
C. -T. Kuo,
M. Gehlmann,
C. Conlon,
A. Keqi,
A. Rattanachata,
O. Karslıoğlu,
J. Mueller,
J. Sethian,
H. Bluhm,
J. E. Rault,
J. P. Rueff,
H. Fang,
A. Javey,
C. S. Fadley
Abstract:
Free-standing nanoribbons of InAs quantum membranes (QMs) transferred onto a (Si/Mo) multilayer mirror substrate are characterized by hard x-ray photoemission spectroscopy (HXPS), and by standing-wave HXPS (SW-HXPS). Information on the chemical composition and on the chemical states of the elements within the nanoribbons was obtained by HXPS and on the quantitative depth profiles by SW-HXPS. By co…
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Free-standing nanoribbons of InAs quantum membranes (QMs) transferred onto a (Si/Mo) multilayer mirror substrate are characterized by hard x-ray photoemission spectroscopy (HXPS), and by standing-wave HXPS (SW-HXPS). Information on the chemical composition and on the chemical states of the elements within the nanoribbons was obtained by HXPS and on the quantitative depth profiles by SW-HXPS. By comparing the experimental SW-HXPS rocking curves to x-ray optical calculations, the chemical depth profile of the InAs(QM) and its interfaces were quantitatively derived with angstrom precision. We determined that: i) the exposure to air induced the formation of an InAsO$_4$ layer on top of the stoichiometric InAs(QM); ii) the top interface between the air-side InAsO$_4$ and the InAs(QM) is not sharp, indicating that interdiffusion occurs between these two layers; iii) the bottom interface between the InAs(QM) and the native oxide SiO$_2$ on top of the (Si/Mo) substrate is abrupt. In addition, the valence band offset (VBO) between the InAs(QM) and the SiO$_2$/(Si/Mo) substrate was determined by HXPS. The value of $VBO = 0.2 \pm 0.04$ eV is in good agreement with literature results obtained by electrical characterization, giving a clear indication of the formation of a well-defined and abrupt InAs/SiO$_2$ heterojunction. We have demonstrated that HXPS and SW-HXPS are non-destructive, powerful methods for characterizing interfaces and for providing chemical depth profiles of nanostructures, quantum membranes, and 2D layered materials.
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Submitted 16 January, 2018;
originally announced January 2018.
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Atomic-layer-resolved composition and electronic structure of the cuprate Bi$_2$Sr$_2$CaCu$_2$O$_{8+δ}$ from soft x-ray standing-wave photoemission
Authors:
Cheng-Tai Kuo,
Shih-Chieh Lin,
Giuseppina Conti,
Shu-Ting Pi,
Luca Moreschini,
Aaron Bostwick,
Julia Meyer-Ilse,
Eric Gullikson,
Jeffrey B. Kortright,
Slavomir Nemšák,
Julien E. Rault,
Patrick Le Fèvre,
François Bertran,
Andrés F. Santander-Syro,
Ivan A. Vartanyants,
Warren E. Pickett,
Romuald Saint-Martin,
Amina Taleb,
Charles S. Fadley
Abstract:
A major remaining challenge in the superconducting cuprates is the unambiguous differentiation of the composition and electronic structure of the CuO$_2$ layers and those of the intermediate layers. The large c axis for these materials permits employing soft x-ray (930.3 eV) standing wave (SW) excitation in photoemission that yields atomic layer-by-atomic layer depth resolution of these properties…
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A major remaining challenge in the superconducting cuprates is the unambiguous differentiation of the composition and electronic structure of the CuO$_2$ layers and those of the intermediate layers. The large c axis for these materials permits employing soft x-ray (930.3 eV) standing wave (SW) excitation in photoemission that yields atomic layer-by-atomic layer depth resolution of these properties. Applying SW photoemission to Bi$_2$Sr$_2$CaCu$_2$O$_{8+δ}$ yields the depth distribution of atomic composition and the layer-resolved densities of states. We detect significant Ca presence in the SrO layers and oxygen bonding to three different cations. The layer-resolved valence electronic structure is found to be strongly influenced by the supermodulation structure--as determined by comparison to DFT calculations, by Ca-Sr intermixing, and by the Cu 3d-3d Coulomb interaction, further clarifying the complex interactions in this prototypical cuprate. Measurements of this type for other quasi-two-dimensional materials with large-c represent a promising future direction.
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Submitted 24 September, 2018; v1 submitted 16 January, 2018;
originally announced January 2018.
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Electronic Structure of the Dilute Magnetic Semiconductor $Ga_{1-x}Mn_xP$ from Hard X-ray Photoelectron Spectroscopy and Hard X-ray Angle-Resolved Photoemission
Authors:
Armela Keqi,
Mathias Gehlmann,
Giuseppina Conti,
Slavomir Nemšák,
Arunothai Rattanachata,
Jan Minár,
Lukasz Plucinski,
Julien E Rault,
Jean-Pascal Rueff,
Mike Scarpulla,
Mihael Hategan,
Gunnar K Pálsson,
Catherine Conlon,
Daria Eiteneer,
Alexander Y Saw,
Alexander X Gray,
Keisuke Kobayashi,
Shigenori Ueda,
Oscar D Dubon,
Claus M Schneider,
Charles S Fadley
Abstract:
We have investigated the electronic structure of the dilute magnetic semiconductor (DMS) $Ga_{0.98}Mn_{0.02}P$ and compared it to that of an undoped $GaP$ reference sample, using hard X-ray photoelectron spectroscopy (HXPS) and hard X-ray angle-resolved photoemission spectroscopy (HARPES) at energies of about 3 keV. We present experimental data, as well as theoretical calculations, in order to und…
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We have investigated the electronic structure of the dilute magnetic semiconductor (DMS) $Ga_{0.98}Mn_{0.02}P$ and compared it to that of an undoped $GaP$ reference sample, using hard X-ray photoelectron spectroscopy (HXPS) and hard X-ray angle-resolved photoemission spectroscopy (HARPES) at energies of about 3 keV. We present experimental data, as well as theoretical calculations, in order to understand the role of the Mn dopant in the emergence of ferromagnetism in this material. Both core-level spectra and angle-resolved or angle-integrated valence spectra are discussed. In particular, the HARPES experimental data are compared to free-electron final-state model calculations and to more accurate one-step photoemission theory. The experimental results show differences between $Ga_{0.98}Mn_{0.02}P$ and $GaP$ in both angle-resolved and angle-integrated valence spectra. The $Ga_{0.98}Mn_{0.02}P$ bands are broadened due to the presence of Mn impurities that disturb the long-range translational order of the host $GaP$ crystal. Mn-induced changes of the electronic structure are observed over the entire valence band range, including the presence of a distinct impurity band close to the valence-band maximum of the DMS. These experimental results are in good agreement with the one-step photoemission calculations, and a prior HARPES study of $Ga_{0.97}Mn_{0.03}As$ and $GaAs$ (Gray et al. Nature Materials 11, 957 (2012)), demonstrating the strong similarity between these two materials. The Mn 2p and 3s core-level spectra also reveal an essentially identical state in doping both $GaAs$ and $GaP$.
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Submitted 14 January, 2018;
originally announced January 2018.
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Depth profiling charge accumulation from a ferroelectric into a doped Mott insulator
Authors:
M. Marinova,
J. E. Rault,
A. Gloter,
S. Nemsak,
G. K. Palsson,
J. -P. Rueff,
C. S. Fadley,
C. Carretero,
H. Yamada,
K. March,
V. Garcia,
S. Fusil,
A. Barthelemy,
O. Stephan,
C. Colliex,
M. Bibes
Abstract:
The electric field control of functional properties is a crucial goal in oxide-based electronics. Non-volatile switching between different resistivity or magnetic states in an oxide channel can be achieved through charge accumulation or depletion from an adjacent ferroelectric. However, the way in which charge distributes near the interface between the ferroelectric and the oxide remains poorly kn…
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The electric field control of functional properties is a crucial goal in oxide-based electronics. Non-volatile switching between different resistivity or magnetic states in an oxide channel can be achieved through charge accumulation or depletion from an adjacent ferroelectric. However, the way in which charge distributes near the interface between the ferroelectric and the oxide remains poorly known, which limits our understanding of such switching effects. Here we use a first-of-a-kind combination of scanning transmission electron microscopy with electron energy loss spectroscopy, near-total-reflection hard X-ray photoemission spectroscopy, and ab-initio theory to address this issue. We achieve a direct, quantitative, atomic-scale characterization of the polarization-induced charge density changes at the interface between the ferroelectric BiFeO3 and the doped Mott insulator Ca1-xCexMnO3, thus providing insight on how interface-engineering can enhance these switching effects.
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Submitted 30 August, 2017;
originally announced August 2017.
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Superconductor to Mott insulator transition in YBa$_2$Cu$_3$O$_7$/LaCaMnO$_3$ heterostructures
Authors:
B. A. Gray,
S. Middey,
G. Conti,
A. X. Gray,
C. -T. Kuo,
A. M. Kaiser,
S. Ueda,
K. Kobayashi,
D. Meyers,
M. Kareev,
I. C. Tung,
Jian Liu,
C. S. Fadley,
J. Chakhalian,
J. W. Freeland
Abstract:
The superconductor-to-insulator transition (SIT) induced by means such as external magnetic fields, disorder or spatial confinement is a vivid illustration of a quantum phase transition dramatically affecting the superconducting order parameter. In pursuit of a new realization of the SIT by interfacial charge transfer, we developed extremely thin superlattices composed of high $T_c$ superconductor…
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The superconductor-to-insulator transition (SIT) induced by means such as external magnetic fields, disorder or spatial confinement is a vivid illustration of a quantum phase transition dramatically affecting the superconducting order parameter. In pursuit of a new realization of the SIT by interfacial charge transfer, we developed extremely thin superlattices composed of high $T_c$ superconductor YBa$_2$Cu$_3$O$_7$ (YBCO) and colossal magnetoresistance ferromagnet La$_{0.67}$Ca$_{0.33}$MnO$_3$ (LCMO). By using linearly polarized resonant X-ray absorption spectroscopy and magnetic circular dichroism, combined with hard X-ray photoelectron spectroscopy, we derived a complete picture of the interfacial carrier doping in cuprate and manganite atomic layers, leading to the transition from superconducting to an unusual Mott insulating state emerging with the increase of LCMO layer thickness. In addition, contrary to the common perception that only transition metal ions may response to the charge transfer process, we found that charge is also actively compensated by rare-earth and alkaline-earth metal ions of the interface. Such deterministic control of $T_c$ by pure electronic doping without any hindering effects of chemical substitution is another promising route to disentangle the role of disorder on the pseudo-gap and charge density wave phases of underdoped cuprates.
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Submitted 15 August, 2016;
originally announced August 2016.
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Depth-Resolved Composition and Electronic Structure of Buried Layers and Interfaces in a LaNiO$_3$/SrTiO$_3$ Superlattice from Soft- and Hard- X-ray Standing-Wave Angle-Resolved Photoemission
Authors:
D. Eiteneer,
G. K. Pálsson,
S. Nemšák,
A. X. Gray,
A. M. Kaiser,
J. Son,
J. LeBeau,
G. Conti,
A. A. Greer,
A. Keqi,
A. Rattanachata,
A. Y. Saw,
A. Bostwick,
E. Rotenberg,
E. M. Gullikson,
S. Ueda,
K. Kobayashi,
A. Janotti,
C. G. Van de Walle,
A. Blanca-Romero,
R. Pentcheva,
C. M. Schneider,
S. Stemmer,
C. S. Fadley
Abstract:
LaNiO$_3$ (LNO) is an intriguing member of the rare-earth nickelates in exhibiting a metal-insulator transition for a critical film thickness of about 4 unit cells [Son et al., Appl. Phys. Lett. 96, 062114 (2010)]; however, such thin films also show a transition to a metallic state in superlattices with SrTiO$_3$ (STO) [Son et al., Appl. Phys. Lett. 97, 202109 (2010)]. In order to better understan…
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LaNiO$_3$ (LNO) is an intriguing member of the rare-earth nickelates in exhibiting a metal-insulator transition for a critical film thickness of about 4 unit cells [Son et al., Appl. Phys. Lett. 96, 062114 (2010)]; however, such thin films also show a transition to a metallic state in superlattices with SrTiO$_3$ (STO) [Son et al., Appl. Phys. Lett. 97, 202109 (2010)]. In order to better understand this transition, we have studied a strained LNO/STO superlattice with 10 repeats of [4 unit-cell LNO/3 unit-cell STO] grown on an (LaAlO$_3$)$_{0.3}$(Sr$_2$AlTaO$_6$)$_{0.7}$ substrate using soft x-ray standing-wave-excited angle-resolved photoemission (SWARPES), together with soft- and hard- x-ray photoemission measurements of core levels and densities-of-states valence spectra. The experimental results are compared with state-of-the-art density functional theory (DFT) calculations of band structures and densities of states. Using core-level rocking curves and x-ray optical modeling to assess the position of the standing wave, SWARPES measurements are carried out for various incidence angles and used to determine interface-specific changes in momentum-resolved electronic structure. We further show that the momentum-resolved behavior of the Ni 3d eg and t2g states near the Fermi level, as well as those at the bottom of the valence bands, is very similar to recently published SWARPES results for a related La$_{0.7}$Sr$_{0.3}$MnO$_3$/SrTiO$_3$ superlattice that was studied using the same technique (Gray et al., Europhysics Letters 104, 17004 (2013)), which further validates this experimental approach and our conclusions. Our conclusions are also supported in several ways by comparison to DFT calculations for the parent materials and the superlattice, including layer-resolved density-of-states results.
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Submitted 27 May, 2016; v1 submitted 22 October, 2015;
originally announced October 2015.
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Observation by resonant angle-resolved photoemission of a critical thickness for 2-dimensional electron gas formation in SrTiO$_3$ embedded in GdTiO$_3$
Authors:
S. Nemšák,
G. Conti,
G. K. Pálsson,
C. Conlon,
S. Cho,
J. Rault,
J. Avila,
M. -C. Asensio,
C. Jackson,
P. Moetakef,
A. Janotti,
L. Bjaalie,
B. Himmetoglu,
C. G. Van de Walle,
L. Balents,
C. M. Schneider,
S. Stemmer,
C. S. Fadley`
Abstract:
For certain conditions of layer thickness, the interface between GdTiO$_3$ (GTO) and SrTiO$_3$ (STO) in multilayer samples has been found to form a two-dimensional electron gas (2DEG) with very interesting properties including high mobilities and ferromagnetism. We have here studied two trilayer samples of the form [2 nm GTO/1.0 or 1.5 unit cells STO/10 nm GTO] as grown on (001) (LaAlO$_3$)…
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For certain conditions of layer thickness, the interface between GdTiO$_3$ (GTO) and SrTiO$_3$ (STO) in multilayer samples has been found to form a two-dimensional electron gas (2DEG) with very interesting properties including high mobilities and ferromagnetism. We have here studied two trilayer samples of the form [2 nm GTO/1.0 or 1.5 unit cells STO/10 nm GTO] as grown on (001) (LaAlO$_3$)$_{0.3}$(Sr$_2$AlTaO$_6$)$_{0.7}$ (LSAT), with the STO layer thicknesses being at what has been suggested is the critical thickness for 2DEG formation. We have studied these with Ti-resonant angle-resolved (ARPES) and angle-integrated photoemission and find that the spectral feature in the spectra associated with the 2DEG is present in the 1.5 unit cell sample, but not in the 1.0 unit cell sample. We also observe through core-level spectra additional states in Ti and Sr, with the strength of a low-binding-energy state for Sr being associated with the appearance of the 2DEG, and we suggest it to have an origin in final-state core-hole screening.
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Submitted 20 November, 2015; v1 submitted 13 August, 2015;
originally announced August 2015.
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Energetic, spatial and momentum character of a buried interface: the two-dimensional electron gas between two metal oxides
Authors:
S. Nemšák,
G. Conti,
A. X. Gray,
G. K. Pálsson,
C. Conlon,
D. Eiteneer,
A. Keqi,
A. Rattanachata,
A. Y. Saw,
A. Bostwick,
L. Moreschini,
V. Strocov,
M. Kobayashi,
W. Stolte,
S. Ueda,
K. Kobayashi,
A. Gloskovskii,
W. Drube,
C. Jackson,
P. Moetakef,
A. Janotti,
L. Bjaalie,
B. Himmetoglu,
C. G. Van de Walle,
S. Borek
, et al. (10 additional authors not shown)
Abstract:
The interfaces between two condensed phases often exhibit emergent physical properties that can lead to new physics and novel device applications, and are the subject of intense study in many disciplines. We here apply novel experimental and theoretical techniques to the characterization of one such interesting interface system: the two-dimensional electron gas (2DEG) formed in multilayers consist…
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The interfaces between two condensed phases often exhibit emergent physical properties that can lead to new physics and novel device applications, and are the subject of intense study in many disciplines. We here apply novel experimental and theoretical techniques to the characterization of one such interesting interface system: the two-dimensional electron gas (2DEG) formed in multilayers consisting of SrTiO$_3$ (STO) and GdTiO$_3$ (GTO). This system has been the subject of multiple studies recently and shown to exhibit very high carrier charge densities and ferromagnetic effects, among other intriguing properties. We have studied a 2DEG-forming multilayer of the form [6 unit cells STO/3 unit cells of GTO]$_{20}$ using a unique array of photoemission techniques including soft and hard x-ray excitation, soft x-ray angle-resolved photoemission, core-level spectroscopy, resonant excitation, and standing-wave effects, as well as theoretical calculations of the electronic structure at several levels and of the actual photoemission process. Standing-wave measurements below and above a strong resonance have been introduced as a powerful method for studying the 2DEG depth distribution. We have thus characterized the spatial and momentum properties of this 2DEG with unprecedented detail, determining via depth-distribution measurements that it is spread throughout the 6 u.c. layer of STO, and measuring the momentum dispersion of its states. The experimental results are supported in several ways by theory, leading to a much more complete picture of the nature of this 2DEG, and suggesting that oxygen vacancies are not the origin of it. Similar multi-technique photoemission studies of such states at buried interfaces, combined with comparable theory, will be a very fruitful future approach for exploring and modifying the fascinating world of buried-interface physics and chemistry.
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Submitted 9 March, 2016; v1 submitted 7 August, 2015;
originally announced August 2015.
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Satellite Band Structure in Silicon Caused by Electron-Plasmon Coupling
Authors:
Johannes Lischner,
G. K. Palsson,
Derek Vigil-Fowler,
S. Nemsak,
J. Avila,
M. C. Asensio,
C. S. Fadley,
S. G. Louie
Abstract:
We report the first angle-resolved photoemission measurement of the wave-vector dependent plasmon satellite structure of a three-dimensional solid, crystalline silicon. In sharp contrast to nanomaterials, which typically exhibit strongly wave-vector dependent, low-energy plasmons, the large plasmon energy of silicon facilitates the search for a plasmaron state consisting of resonantly bound holes…
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We report the first angle-resolved photoemission measurement of the wave-vector dependent plasmon satellite structure of a three-dimensional solid, crystalline silicon. In sharp contrast to nanomaterials, which typically exhibit strongly wave-vector dependent, low-energy plasmons, the large plasmon energy of silicon facilitates the search for a plasmaron state consisting of resonantly bound holes and plasmons and its distinction from a weakly interacting plasmon-hole pair. Employing a first-principles theory, which is based on a cumulant expansion of the one-electron Green's function and contains significant electron correlation effects, we obtain good agreement with the measured photoemission spectrum for the wave-vector dependent dispersion of the satellite feature, but without observing the existence of plasmarons in the calculations.
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Submitted 29 April, 2015;
originally announced April 2015.
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Interface Engineering to Create a Strong Spin Filter Contact to Silicon
Authors:
C. Caspers,
A. Gloskovskii,
M. Gorgoi,
C. Besson,
M. Luysberg,
K. Rushchanskii,
M. Ležaić,
C. S. Fadley,
W. Drube,
M. Müller
Abstract:
Integrating epitaxial and ferromagnetic Europium Oxide (EuO) directly on silicon is a perfect route to enrich silicon nanotechnology with spin filter functionality.
To date, the inherent chemical reactivity between EuO and Si has prevented a heteroepitaxial integration without significant contaminations of the interface with Eu silicides and Si oxides.
We present a solution to this long-standi…
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Integrating epitaxial and ferromagnetic Europium Oxide (EuO) directly on silicon is a perfect route to enrich silicon nanotechnology with spin filter functionality.
To date, the inherent chemical reactivity between EuO and Si has prevented a heteroepitaxial integration without significant contaminations of the interface with Eu silicides and Si oxides.
We present a solution to this long-standing problem by applying two complementary passivation techniques for the reactive EuO/Si interface:
($i$) an $in\:situ$ hydrogen-Si $(001)$ passivation and ($ii$) the application of oxygen-protective Eu monolayers --- without using any additional buffer layers.
By careful chemical depth profiling of the oxide-semiconductor interface via hard x-ray photoemission spectroscopy, we show how to systematically minimize both Eu silicide and Si oxide formation to the sub-monolayer regime --- and how to ultimately interface-engineer chemically clean, heteroepitaxial and ferromagnetic EuO/Si $(001)$ in order to create a strong spin filter contact to silicon.
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Submitted 17 March, 2016; v1 submitted 20 April, 2015;
originally announced April 2015.
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Strong interlayer coupling in van der Waals heterostructures built from single-layer chalcogenides
Authors:
Hui Fang,
Corsin Battaglia,
Carlo Carraro,
Slavomir Nemsak,
Burak Ozdol,
Jeong Seuk Kang,
Hans A. Bechtel,
Sujay B. Desai,
Florian Kronast,
Ahmet A. Unal,
Giuseppina Conti,
Catherine Conlon,
Gunnar K. Palsson,
Michael C. Martin,
Andrew M. Minor,
Charles S. Fadley,
Eli Yablonovitch,
Roya Maboudian,
Ali Javey
Abstract:
Semiconductor heterostructures are the fundamental platform for many important device applications such as lasers, light-emitting diodes, solar cells and high-electron-mobility transistors. Analogous to traditional heterostructures, layered transition metal dichalcogenide (TMDC) heterostructures can be designed and built by assembling individual single-layers into functional multilayer structures,…
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Semiconductor heterostructures are the fundamental platform for many important device applications such as lasers, light-emitting diodes, solar cells and high-electron-mobility transistors. Analogous to traditional heterostructures, layered transition metal dichalcogenide (TMDC) heterostructures can be designed and built by assembling individual single-layers into functional multilayer structures, but in principle with atomically sharp interfaces, no interdiffusion of atoms, digitally controlled layered components and no lattice parameter constraints. Nonetheless, the optoelectronic behavior of this new type of van der Waals (vdW) semiconductor heterostructure is unknown at the single-layer limit. Specifically, it is experimentally unknown whether the optical transitions will be spatially direct or indirect in such hetero-bilayers. Here, we investigate artificial semiconductor heterostructures built from single layer WSe2 and MoS2 building blocks. We observe a large Stokes-like shift of ~100 meV between the photoluminescence peak and the lowest absorption peak that is consistent with a type II band alignment with spatially direct absorption but spatially indirect emission. Notably, the photoluminescence intensity of this spatially indirect transition is strong, suggesting strong interlayer coupling of charge carriers. The coupling at the hetero-interface can be readily tuned by inserting hexagonal BN (h-BN) dielectric layers into the vdW gap. The generic nature of this interlayer coupling consequently provides a new degree of freedom in band engineering and is expected to yield a new family of semiconductor heterostructures having tunable optoelectronic properties with customized composite layers.
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Submitted 14 April, 2014; v1 submitted 15 March, 2014;
originally announced March 2014.
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Momentum-resolved electronic structure at a buried interface from soft x-ray standing-wave angle-resolved photoemission
Authors:
A. X. Gray,
J. Minár,
L. Plucinski,
M. Huijben,
A. Bostwick,
E. Rotenberg,
S. -H. Yang,
J. Braun,
A. Winkelmann,
G. Conti,
D. Eiteneer,
A. Rattanachata,
A. A. Greer,
J. Ciston,
C. Ophus,
G. Rijnders,
D. H. A. Blank,
D. Doennig,
R. Pentcheva,
C. M. Schneider,
H. Ebert,
C. S. Fadley
Abstract:
Angle-resolved photoemission spectroscopy (ARPES) is a powerful technique for the study of electronic structure, but it lacks a direct ability to study buried interfaces between two materials. We address this limitation by combining ARPES with soft x-ray standing-wave (SW) excitation (SWARPES), in which the SW profile is scanned through the depth of the sample. We have studied the buried interface…
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Angle-resolved photoemission spectroscopy (ARPES) is a powerful technique for the study of electronic structure, but it lacks a direct ability to study buried interfaces between two materials. We address this limitation by combining ARPES with soft x-ray standing-wave (SW) excitation (SWARPES), in which the SW profile is scanned through the depth of the sample. We have studied the buried interface in a prototypical magnetic tunnel junction La0.7Sr0.3MnO3/SrTiO3. Depth- and momentum-resolved maps of Mn 3d eg and t2g states from the central, bulk-like and interface-like regions of La0.7Sr0.3MnO3 exhibit distinctly different behavior consistent with a change in the Mn bonding at the interface. We compare the experimental results to state-of-the-art density-functional and one-step photoemission theory, with encouraging agreement that suggests wide future applications of this technique.
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Submitted 8 September, 2013;
originally announced September 2013.
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Identifying the electronic character and role of the Mn states in the valence band of (Ga,Mn)As
Authors:
J. Fujii,
B. R. Salles,
M. Sperl,
S. Ueda,
M. Kobata,
K. Kobayashi,
Y. Yamashita,
P. Torelli,
M. Utz,
C. S. Fadley,
A. X. Gray,
J. Minar,
J. Braun,
H. Ebert,
I. Di Marco,
O. Eriksson,
P. Thunström,
G. H. Fecher,
S. Ouardi,
H. Stryhanyuk,
E. Ikenaga,
C. H. Back,
G. van der Laan,
G. Panaccione
Abstract:
We report high-resolution hard x-ray photoemission spectroscopy results on (Ga,Mn)As films as a function of Mn doping. Supported by theoretical calculations we identify, over the entire 1% to 13% Mn doping range, the electronic character of the states near the top of the valence band. Magnetization and temperature dependent core-level photoemission spectra reveal how the delocalized character of t…
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We report high-resolution hard x-ray photoemission spectroscopy results on (Ga,Mn)As films as a function of Mn doping. Supported by theoretical calculations we identify, over the entire 1% to 13% Mn doping range, the electronic character of the states near the top of the valence band. Magnetization and temperature dependent core-level photoemission spectra reveal how the delocalized character of the Mn states enables the bulk ferromagnetic properties of (Ga,Mn)As.
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Submitted 5 June, 2013; v1 submitted 4 June, 2013;
originally announced June 2013.
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High energy photoelectron diffraction: model calculations and future possibilities
Authors:
Aimo Winkelmann,
Charles S. Fadley,
F. Javier Garcia de Abajo
Abstract:
We discuss the theoretical modelling of x-ray photoelectron diffraction (XPD) with hard x-ray excitation at up to 20 keV, using the dynamical theory of electron diffraction to illustrate the characteristic aspects of diffraction patterns resulting from such localized emission sources in a multi-layer crystal.
We show via dynamical calculations for diamond, Si, and Fe that the dynamical theory…
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We discuss the theoretical modelling of x-ray photoelectron diffraction (XPD) with hard x-ray excitation at up to 20 keV, using the dynamical theory of electron diffraction to illustrate the characteristic aspects of diffraction patterns resulting from such localized emission sources in a multi-layer crystal.
We show via dynamical calculations for diamond, Si, and Fe that the dynamical theory well predicts available current data for lower energies around 1 keV, and that the patterns for energies above about 1 keV are dominated by Kikuchi bands which are created by the dynamical scattering of electrons from lattice planes. The origin of the fine structure in such bands is discussed from the point of view of atomic positions in the unit cell. The profiles and positions of the element-specific photoelectron Kikuchi bands are found to be sensitive to lattice distortions (e.g. a 1% tetragonal distortion) and the position of impurities or dopants with respect to lattice sites. We also compare the dynamical calculations to results from a cluster model that is more often used to describe lower-energy XPD. We conclude that hard XPD (HXPD) should be capable of providing unique bulk-sensitive structural information for a wide variety of complex materials in future experiments.
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Submitted 10 July, 2008;
originally announced July 2008.
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Observation and resonant x-ray optical interpretation of multi-atom resonant photoemission effects in O 1s emission from NiO
Authors:
N. Mannella,
S. -H. Yang,
B. S. Mun,
F. J. Garcia de Abajo,
A. W. Kay,
B. C. Sell,
M. Watanabe,
H. Ohldag,
E. Arenholz,
A. T. Young,
Z. Hussain,
M. A. Van Hove,
C. S. Fadley
Abstract:
We present experimental and theoretical results for the variation of the O 1s intensity from a NiO(001) surface as the excitation energy is varied through the Ni 2p1/2,3/2 absorption resonances, and as the incidence angle of the radiation is varied from grazing to larger values. For grazing incidence, a strong multi-atom resonant photoemission (MARPE) effect is seen on the O 1s intensity as the…
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We present experimental and theoretical results for the variation of the O 1s intensity from a NiO(001) surface as the excitation energy is varied through the Ni 2p1/2,3/2 absorption resonances, and as the incidence angle of the radiation is varied from grazing to larger values. For grazing incidence, a strong multi-atom resonant photoemission (MARPE) effect is seen on the O 1s intensity as the Ni 2p resonances are crossed, but its magnitude decreases rapidly as the incidence angle is increased. Resonant x-ray optical (RXRO) calculations are found to predict these effects very well, although the experimental effects are found to decrease at higher incidence angles faster than those in theory. The potential influence of photoelectron diffraction effects on such measurements are also considered, including experimental data with azimuthal-angle variation and corresponding multiple-scattering-diffraction calculations, but we conclude that they do not vary beyond what is expected on the basis of the change in photoelectron kinetic energy. Varying from linear polarization to circular polarization is found to enhance these effects in NiO considerably, although the reasons are not clear. We also discuss the relationship of these measurements to other related interatomic resonance experiments and theoretical developments, and make some suggestions for future studies in this area.
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Submitted 5 September, 2006;
originally announced September 2006.
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Temperature-Dependent X-Ray Absorption Spectroscopy of Colossal Magnetoresistive Perovskites
Authors:
N. Mannella,
A. Rosenhahn,
M. Watanabe,
B. Sell,
A. Nambu,
S. Ritchey,
E. Arenholz,
A. Young,
Y. Tomioka,
C. S. Fadley
Abstract:
The temperature dependence of the O K-edge pre-edge structure in the x-ray absorption spectra of the perovskites La(1-x)A(x)MnO(3), (A = Ca, Sr; x = 0.3, 0.4) reveals a correlation between the disappearance of the splitting in the pre-edge region and the presence of Jahn-Teller distortions. The different magnitudes of the distortions for different compounds is proposed to explain some dissimilar…
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The temperature dependence of the O K-edge pre-edge structure in the x-ray absorption spectra of the perovskites La(1-x)A(x)MnO(3), (A = Ca, Sr; x = 0.3, 0.4) reveals a correlation between the disappearance of the splitting in the pre-edge region and the presence of Jahn-Teller distortions. The different magnitudes of the distortions for different compounds is proposed to explain some dissimilarity in the line shape of the spectra taken above the Curie temperature.
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Submitted 11 January, 2005;
originally announced January 2005.
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Correction of non-linearity effects in detectors for electron spectroscopy
Authors:
N. Mannella,
S. Marchesini,
A. W. Kay,
A. Nambu,
T. Gresch,
S. -H. Yang,
B. S. Mun,
J. M. Bussat,
A. Rosenhahn,
C. S. Fadley
Abstract:
Using photoemission intensities and a detection system employed by many groups in the electron spectroscopy community as an example, we have quantitatively characterized and corrected detector non-linearity effects over the full dynamic range of the system. Non-linearity effects are found to be important whenever measuring relative peak intensities accurately is important, even in the low-countr…
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Using photoemission intensities and a detection system employed by many groups in the electron spectroscopy community as an example, we have quantitatively characterized and corrected detector non-linearity effects over the full dynamic range of the system. Non-linearity effects are found to be important whenever measuring relative peak intensities accurately is important, even in the low-countrate regime. This includes, for example, performing quantitative analyses for surface contaminants or sample bulk stoichiometries, where the peak intensities involved can differ by one or two orders of magnitude, and thus could occupy a significant portion of the detector dynamic range. Two successful procedures for correcting non-linearity effects are presented. The first one yields directly the detector efficiency by measuring a flat-background reference intensity as a function of incident x-ray flux, while the second one determines the detector response from a least-squares analysis of broad-scan survey spectra at different incident x-ray fluxes. Although we have used one spectrometer and detection system as an example, these methodologies should be useful for many other cases.
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Submitted 17 December, 2004;
originally announced December 2004.
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Direct Observation of High-Temperature Polaronic Behavior In Colossal Magnetoresistive Manganites
Authors:
N. Mannella,
A. Rosenhahn,
C. H. Booth,
S. Marchesini,
B. S. Mun,
S. -H. Yang,
K. Ibrahim,
Y. Tomioka,
C. S. Fadley
Abstract:
The temperature dependence of the electronic and atomic structure of the colossal magnetoresistive oxides $La_{1-x}Sr_{x}MnO_{3}$ (x = 0.3, 0.4) has been studied using core and valence level photoemission, x-ray absorption and emission, and extended x-ray absorption fine structure spectroscopy. A dramatic and reversible change of the electronic structure is observed on crossing the Curie tempera…
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The temperature dependence of the electronic and atomic structure of the colossal magnetoresistive oxides $La_{1-x}Sr_{x}MnO_{3}$ (x = 0.3, 0.4) has been studied using core and valence level photoemission, x-ray absorption and emission, and extended x-ray absorption fine structure spectroscopy. A dramatic and reversible change of the electronic structure is observed on crossing the Curie temperature, including charge localization and spin moment increase of Mn, together with Jahn-Teller distortions, both signatures of polaron formation. Our data are also consistent with a phase-separation scenario.
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Submitted 15 January, 2004; v1 submitted 15 January, 2004;
originally announced January 2004.
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Differential Photoelectron Holography: A New Approach for Three-Dimensional Atomic Imaging
Authors:
S. Omori,
Y. Nihei,
E. Rotenberg,
J. D. Denlinger,
S. Marchesini,
S. D. Kevan,
B. P. Tonner,
M. A. Van Hove,
C. S. Fadley
Abstract:
We propose differential holography as a method to overcome the long-standing forward-scattering problem in photoelectron holography and related techniques for the three-dimensional imaging of atoms. Atomic images reconstructed from experimental and theoretical Cu 3p holograms from Cu(001) demonstrate that this method suppresses strong forward-scattering effects so as to yield more accurate three…
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We propose differential holography as a method to overcome the long-standing forward-scattering problem in photoelectron holography and related techniques for the three-dimensional imaging of atoms. Atomic images reconstructed from experimental and theoretical Cu 3p holograms from Cu(001) demonstrate that this method suppresses strong forward-scattering effects so as to yield more accurate three-dimensional images of side- and back-scattering atoms.
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Submitted 28 July, 2003;
originally announced July 2003.
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X-ray fluorescence holography: going beyond the diffraction limit
Authors:
S. Marchesini,
C. S. Fadley,
F. J. Garcia de Abajo
Abstract:
X-ray fluorescence holography (XFH) is a method for obtaining diffraction-limited images of the local atomic structure around a given type of emitter. The reconstructed wave-field represents a distorted image of the scatterer electron density distribution; {\it i.e.} it is a convolution of the charge density distribution with a point spread function characteristic of the measurement. We here con…
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X-ray fluorescence holography (XFH) is a method for obtaining diffraction-limited images of the local atomic structure around a given type of emitter. The reconstructed wave-field represents a distorted image of the scatterer electron density distribution; {\it i.e.} it is a convolution of the charge density distribution with a point spread function characteristic of the measurement. We here consider several methods for the iterative deconvolution of such XFH holograms, and via theoretical simulations evaluate them from the point of view of going beyond the diffraction limit so as to image the electron charge density. Promising results for future applications are found for certain methods, and other possible image-enhancement techniques are also discussed.
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Submitted 4 June, 2002; v1 submitted 5 February, 2002;
originally announced February 2002.
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Holographic analysis of diffraction structure factors
Authors:
S. Marchesini,
N. Mannella,
C. S. Fadley,
M. A. Van Hove,
J. J. Bucher,
D. K. Shuh,
L. Fabris,
M. H. Press,
M. W. West,
W. C. Stolte,
Z. Hussain
Abstract:
We combine the theory of inside-source/inside-detector x-ray fluorescence holography and Kossel lines/x ray standing waves in kinematic approximation to directly obtain the phases of the diffraction structure factors. The influence of Kossel lines and standing waves on holography is also discussed. We obtain partial phase determination from experimental data obtaining the sign of the real part o…
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We combine the theory of inside-source/inside-detector x-ray fluorescence holography and Kossel lines/x ray standing waves in kinematic approximation to directly obtain the phases of the diffraction structure factors. The influence of Kossel lines and standing waves on holography is also discussed. We obtain partial phase determination from experimental data obtaining the sign of the real part of the structure factor for several reciprocal lattice vectors of a vanadium crystal.
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Submitted 2 May, 2002; v1 submitted 4 February, 2002;
originally announced February 2002.
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Electron correlation effects and magnetic ordering at the Gd(0001) surface
Authors:
A. B. Shick,
W. E. Pickett,
C. S. Fadley
Abstract:
Effects of electron correlation on the electronic structure and magnetic properties of the Gd(0001) surface are investigated using of the full-potential linearized augmented plane wave implementation of correlated band theory ("LDA+U"). The use of LDA+U instead of LDA (local density approximation) total energy calculations produces the correct ferromagnetic ground state for both bulk Gd and the…
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Effects of electron correlation on the electronic structure and magnetic properties of the Gd(0001) surface are investigated using of the full-potential linearized augmented plane wave implementation of correlated band theory ("LDA+U"). The use of LDA+U instead of LDA (local density approximation) total energy calculations produces the correct ferromagnetic ground state for both bulk Gd and the Gd surface. Surface strain relaxation leads to an 90 % enhancement of the interlayer surface-to-bulk effective exchange coupling. Application of a Landau-Ginzburg type theory yields a 30 % enhancement of the Curie temperature at the surface, in very good agreement with the experiment.
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Submitted 20 July, 1999; v1 submitted 19 July, 1999;
originally announced July 1999.
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Energetic and spatial bonding properties from angular distributions of ultraviolet photoelectrons: application to the GaAs(110) surface
Authors:
C. Solterbeck,
W. Schattke,
J. -W. Zahlmann-Nowitzki,
K. -U. Gawlik,
L. Kipp,
M. Skibowski,
C. S. Fadley,
M. A. Van Hove
Abstract:
Angle-resolved ultraviolet photoemission spectra are interpreted by combining the energetics and spatial properties of the contributing states. One-step calculations are in excellent agreement with new azimuthal experimental data for GaAs(110). Strong variations caused by the dispersion of the surface bands permit an accurate mapping of the electronic structure. The delocalization of the valence…
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Angle-resolved ultraviolet photoemission spectra are interpreted by combining the energetics and spatial properties of the contributing states. One-step calculations are in excellent agreement with new azimuthal experimental data for GaAs(110). Strong variations caused by the dispersion of the surface bands permit an accurate mapping of the electronic structure. The delocalization of the valence states is discussed analogous to photoelectron diffraction. The spatial origin of the electrons is determined, and found to be strongly energy dependent, with uv excitation probing the bonding region.
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Submitted 28 August, 1997;
originally announced August 1997.
