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Formation of artificial Fermi surfaces with a triangular superlattice on a conventional two dimensional electron gas
Authors:
Daisy Q. Wang,
Zeb Krix,
Oleg P. Sushkov,
Ian Farrer,
David A. Ritchie,
Alexander R. Hamilton,
Oleh Klochan
Abstract:
In nearly free electron theory the imposition of a periodic electrostatic potential on free electrons creates the bandstructure of a material, determined by the crystal lattice spacing and geometry. Imposing an artificially designed potential to the electrons confined in a GaAs quantum well makes it possible to engineer synthetic two-dimensional band structures, with electronic properties differen…
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In nearly free electron theory the imposition of a periodic electrostatic potential on free electrons creates the bandstructure of a material, determined by the crystal lattice spacing and geometry. Imposing an artificially designed potential to the electrons confined in a GaAs quantum well makes it possible to engineer synthetic two-dimensional band structures, with electronic properties different from those in the host semiconductor. Here we report the fabrication and study of a tuneable triangular artificial lattice on a GaAs/AlGaAs heterostructure where it is possible to transform from the original GaAs bandstructure and Fermi surface to a new bandstructure with multiple artificial Fermi surfaces simply by altering a gate bias. For weak electrostatic potential modulation magnetotransport measurements reveal quantum oscillations from the GaAs two-dimensional Fermi surface, and classical oscillations due to these electrons scattering from the artificial lattice. Increasing the strength of the modulation reveals new quantum oscillations due to the formation of multiple artificial Fermi surfaces, and ultimately to new classical oscillations of the electrons from the artificial Fermi surface scattering from the superlattice modulation. These results show that low disorder gate-tuneable lateral superlattices can be used to form artificial two dimensional crystals with designer electronic properties.
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Submitted 11 March, 2024;
originally announced March 2024.
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Tuning the bandstructure of electrons in a two-dimensional artificial electrostatic crystal in GaAs quantum wells
Authors:
Daisy Q. Wang,
Zeb Krix,
Olga A. Tkachenko,
Vitaly A. Tkachenko,
Chong Chen,
Ian Farrer,
David A. Ritchie,
Oleg P. Sushkov,
Alexander R. Hamilton,
Oleh Klochan
Abstract:
The electronic properties of solids are determined by the crystal structure and interactions between electrons, giving rise to a variety of collective phenomena including superconductivity, strange metals and correlated insulators. The mechanisms underpinning many of these collective phenomena remain unknown, driving interest in creating artificial crystals which replicate the system of interest w…
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The electronic properties of solids are determined by the crystal structure and interactions between electrons, giving rise to a variety of collective phenomena including superconductivity, strange metals and correlated insulators. The mechanisms underpinning many of these collective phenomena remain unknown, driving interest in creating artificial crystals which replicate the system of interest while allowing precise control of key parameters. Cold atoms trapped in optical lattices provide great flexibility and tunability [1, 2], but cannot replicate the long range Coulomb interactions and long range hopping that drive collective phenomena in real crystals. Solid state approaches support long range hopping and interactions, but previous attempts with laterally patterned semiconductor systems were not able to create tunable low disorder artificial crystals, while approaches based on Moire superlattices in twisted two-dimensional (2D) materials [3, 4] have limited tunability and control of lattice geometry. Here we demonstrate the formation of highly tunable artificial crystals by superimposing a periodic electrostatic potential on the 2D electron gas in an ultrashallow (25 nm deep) GaAs quantum well. The 100 nm period artificial crystal is identified by the formation of a new bandstructure, different from the original cubic crystal and unique to the artificial triangular lattice: transport measurements show the Hall coefficient changing sign as the chemical potential sweeps through the artificial bands. Uniquely, the artificial bandstructure can be continuously tuned from parabolic free-electron bands into linear graphene-like and flat kagome-like bands in a single device. This approach allows the formation arbitrary geometry 2D artificial crystals, opening a new route to studying collective quantum states.
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Submitted 20 February, 2024;
originally announced February 2024.
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Probing Purcell enhancement and photon collection efficiency of InAs quantum dots at nodes of the cavity electric field
Authors:
Matthew Jordan,
Petros Androvitsaneas,
Rachel N Clark,
Aristotelis Trapalis,
Ian Farrer,
Wolfgang Langbein,
Anthony J. Bennett
Abstract:
The interaction of excitonic transitions with confined photonic modes enables tests of quantum physics and design of efficient optoelectronic devices. Here we study how key metrics such as Purcell factor, beta-factor and collection efficiency are determined by the non-cavity modes which exist in real devices, taking the well-studied micropillar cavity as an example. Samples with dots at different…
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The interaction of excitonic transitions with confined photonic modes enables tests of quantum physics and design of efficient optoelectronic devices. Here we study how key metrics such as Purcell factor, beta-factor and collection efficiency are determined by the non-cavity modes which exist in real devices, taking the well-studied micropillar cavity as an example. Samples with dots at different positions in the cavity field allow us to quantify the effect of the non-cavity modes and show that the zero-phonon line and the phonon-assisted emission into the cavity mode HE11 is suppressed by positioning dots at the field node.
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Submitted 20 January, 2024;
originally announced January 2024.
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arXiv:2312.11248
[pdf]
quant-ph
cond-mat.mes-hall
cond-mat.str-el
cond-mat.supr-con
physics.app-ph
Quantized conductance in split gate superconducting quantum point contacts with InGaAs semiconducting two-dimensional electron systems
Authors:
Kaveh Delfanazari,
Jiahui Li,
Yusheng Xiong,
Pengcheng Ma,
Reuben K. Puddy,
Teng Yi,
Ian Farrer,
Sachio Komori,
Jason W. A. Robinson,
Llorenc Serra,
David A. Ritchie,
Michael J. Kelly,
Hannah J. Joyce,
Charles G. Smith
Abstract:
Quantum point contact or QPC -- a constriction in a semiconducting two-dimensional (2D) electron system with a quantized conductance -- has been found as the building block of novel spintronic, and topological electronic circuits. They can also be used as readout electronic, charge sensor or switch in quantum nanocircuits. A short and impurity-free constriction with superconducting contacts is a C…
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Quantum point contact or QPC -- a constriction in a semiconducting two-dimensional (2D) electron system with a quantized conductance -- has been found as the building block of novel spintronic, and topological electronic circuits. They can also be used as readout electronic, charge sensor or switch in quantum nanocircuits. A short and impurity-free constriction with superconducting contacts is a Cooper pairs QPC analogue known as superconducting quantum point contact (SQPC). The technological development of such quantum devices has been prolonged due to the challenges of maintaining their geometrical requirement and near-unity superconductor-semiconductor interface transparency. Here, we develop advanced nanofabrication, material and device engineering techniques and report on an innovative realisation of nanoscale SQPC arrays with split gate technology in semiconducting 2D electron systems, exploiting the special gate tunability of the quantum wells, and report the first experimental observation of conductance quantization in hybrid InGaAs-Nb SQPCs. We observe reproducible quantized conductance at zero magnetic fields in multiple quantum nanodevices fabricated in a single chip and systematically investigate the quantum transport of SQPCs at low and high magnetic fields for their potential applications in quantum metrology, for extremely accurate voltage standards, and fault-tolerant quantum technologies.
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Submitted 18 December, 2023;
originally announced December 2023.
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Probing Fermi surface parity with spin resolved transverse magnetic focussing
Authors:
M. J. Rendell,
S. D. Liles,
S. Bladwell,
A. Srinivasan,
O. Klochan,
I. Farrer,
D. A. Ritchie,
O. P. Sushkov,
A. R. Hamilton
Abstract:
Measurements of the Fermi surface are a fundamental technique for determining the electrical and magnetic properties of solids. In 2D systems, the area and diameter of the Fermi surface is typically measured using Shubnikov-de Haas oscillations and commensurability oscillations respectively. However, these techniques are unable to detect changes in the parity of the Fermi surface (i.e. when +k…
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Measurements of the Fermi surface are a fundamental technique for determining the electrical and magnetic properties of solids. In 2D systems, the area and diameter of the Fermi surface is typically measured using Shubnikov-de Haas oscillations and commensurability oscillations respectively. However, these techniques are unable to detect changes in the parity of the Fermi surface (i.e. when +k $\neq$ -k). Here, we show that transverse magnetic focussing can be used to detect such changes, because focussing only measures a well defined section of the Fermi surface and does not average over +k and -k. Furthermore, our results show that focussing is an order of magnitude more sensitive to changes in the Fermi surface than other 2D techniques, and could be used to investigate similar Fermi surface changes in other 2D systems.
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Submitted 7 March, 2024; v1 submitted 6 October, 2023;
originally announced October 2023.
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Exciton-polaritons in GaAsbased slab waveguide photonic crystals
Authors:
C. E. Whittaker,
T. Isoniemi,
S. Lovett,
P. M. Walker,
S. Kolodny,
V. Kozin,
I. V. Iorsh,
I. Farrer,
D. A. Ritchie,
M. S. Skolnick,
D. N. Krizhanovskii
Abstract:
We report the observation of band gaps for low loss exciton-polaritons propagating outside the light cone in GaAs-based planar waveguides patterned into two-dimensional photonic crystals. By etching square lattice arrays of shallow holes into the uppermost layer of our structure, we open gaps on the order of 10 meV in the photonic mode dispersion, whose size and light-matter composition can be tun…
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We report the observation of band gaps for low loss exciton-polaritons propagating outside the light cone in GaAs-based planar waveguides patterned into two-dimensional photonic crystals. By etching square lattice arrays of shallow holes into the uppermost layer of our structure, we open gaps on the order of 10 meV in the photonic mode dispersion, whose size and light-matter composition can be tuned by proximity to the strongly coupled exciton resonance. We demonstrate gaps ranging from almost fully photonic to highly excitonic. Opening a gap in the exciton-dominated part of the polariton spectrum is a promising first step towards the realization of quantum-Hall-like states arising from topologically nontrivial hybridization of excitons and photons.
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Submitted 29 August, 2023;
originally announced August 2023.
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Large-scale on-chip integration of gate-voltage addressable hybrid superconductor-semiconductor quantum wells field effect nano-switch arrays
Authors:
Kaveh Delfanazari,
Jiahui Li,
Peng Ma,
Reuben K. Puddy,
Teng Yi,
Yusheng Xiong,
Ian Farrer,
Sachio Komori,
Jason Robinson,
David A. Ritchie,
Michael J. Kelly,
Hannah J. Joyce,
Charles G. Smith
Abstract:
Stable, reproducible, scalable, addressable, and controllable hybrid superconductor-semiconductor (S-Sm) junctions and switches are key circuit elements and building blocks of gate-based quantum processors. The electrostatic field effect produced by the split gate voltages facilitates the realisation of nano-switches that can control the conductance or current in the hybrid S-Sm circuits based on…
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Stable, reproducible, scalable, addressable, and controllable hybrid superconductor-semiconductor (S-Sm) junctions and switches are key circuit elements and building blocks of gate-based quantum processors. The electrostatic field effect produced by the split gate voltages facilitates the realisation of nano-switches that can control the conductance or current in the hybrid S-Sm circuits based on 2D semiconducting electron systems. Here, we experimentally demonstrate a novel realisation of large-scale scalable, and gate voltage controllable hybrid field effect quantum chips. Each chip contains arrays of split gate field effect hybrid junctions, that work as conductance switches, and are made from In0.75Ga0.25As quantum wells integrated with Nb superconducting electronic circuits. Each hybrid junction in the chip can be controlled and addressed through its corresponding source-drain and two global split gate contact pads that allow switching between their (super)conducting and insulating states. We fabricate a total of 18 quantum chips with 144 field effect hybrid Nb- In0.75Ga0.25As 2DEG-Nb quantum wires and investigate the electrical response, switching voltage (on/off) statistics, quantum yield, and reproducibility of several devices at cryogenic temperatures. The proposed integrated quantum device architecture allows control of individual junctions in a large array on a chip useful for the development of emerging cryogenic nanoelectronics circuits and systems for their potential applications in fault-tolerant quantum technologies.
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Submitted 10 July, 2023;
originally announced July 2023.
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Bose-Einstein Condensation of Light in a Semiconductor Quantum Well Microcavity
Authors:
Ross C. Schofield,
Ming Fu,
Edmund Clarke,
Ian Farrer,
Aristotelis Trapalis,
Himadri S. Dhar,
Rick Mukherjee,
Jon Heffernan,
Florian Mintert,
Robert A. Nyman,
Rupert F. Oulton
Abstract:
When particles with integer spin accumulate at low temperature and high density they undergo Bose-Einstein condensation (BEC). Atoms, solid-state excitons and excitons coupled to light all exhibit BEC, which results in high coherence due to massive occupation of the respective system's ground state. Surprisingly, photons were shown to exhibit BEC much more recently in organic dye-filled optical mi…
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When particles with integer spin accumulate at low temperature and high density they undergo Bose-Einstein condensation (BEC). Atoms, solid-state excitons and excitons coupled to light all exhibit BEC, which results in high coherence due to massive occupation of the respective system's ground state. Surprisingly, photons were shown to exhibit BEC much more recently in organic dye-filled optical microcavities, which, owing to the photon's low mass, occurs at room temperature. Here we demonstrate that photons within an inorganic semiconductor microcavity also thermalise and undergo BEC. Although semiconductor lasers are understood to operate out of thermal equilibrium, we identify a region of good thermalisation in our system where we can clearly distinguish laser action from BEC. Based on well-developed technology, semiconductor microcavities are a robust system for exploring the physics and applications of quantum statistical photon condensates. Notably, photon BEC is an alternative to exciton-based BECs, which dissociate under high excitation and often require cryogenic operating conditions. In practical terms, photon BECs offer their critical behaviour at lower thresholds than lasers. Our study shows two further advantages of photon BEC in semiconductor materials: the lack of dark electronic states allows these BECs to be sustained continuously; and semiconductor quantum wells offer strong photon-photon scattering. We measure an unoptimised interaction parameter, $\tilde{g}=0.0023\pm0.0003$, which is large enough to access the rich physics of interactions within BECs, such as superfluid light or vortex formation.
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Submitted 27 June, 2023;
originally announced June 2023.
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Direct-write projection lithography of quantum dot micropillar single photon sources
Authors:
Petros Androvitsaneas,
Rachel N. Clark,
Matthew Jordan,
Tomas Peach,
Stuart Thomas,
Saleem Shabbir,
Angela D. Sobiesierski,
Aristotelis Trapalis,
Ian A. Farrer,
Wolfgang W. Langbein,
Anthony J. Bennett
Abstract:
We have developed a process to mass-produce quantum dot micropillar cavities using direct-write lithography. This technique allows us to achieve high volume patterning of high aspect ratio pillars with vertical, smooth sidewalls maintaining a high quality factor for diameters below 2.0 $μ$m. Encapsulating the cavities in a thin layer of oxide (Ta$_2$O$_5$) prevents oxidation in the atmosphere, pre…
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We have developed a process to mass-produce quantum dot micropillar cavities using direct-write lithography. This technique allows us to achieve high volume patterning of high aspect ratio pillars with vertical, smooth sidewalls maintaining a high quality factor for diameters below 2.0 $μ$m. Encapsulating the cavities in a thin layer of oxide (Ta$_2$O$_5$) prevents oxidation in the atmosphere, preserving the optical properties of the cavity over months of ambient exposure. We confirm that single dots in the cavities can be deterministically excited to create high purity indistinguishable single photons with interference visibility $(96.2\pm0.7)\%$.
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Submitted 31 March, 2023;
originally announced April 2023.
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Observation of oscillating $g$-factor anisotropy arising from strong crystal lattice anisotropy in GaAs spin-3/2 hole quantum point contacts
Authors:
Karina Hudson,
Ashwin Srinivasan,
Dmitry Miserev,
Qingwen Wang,
Oleh Klochan,
Oleg Sushkov,
Ian Farrer,
David Ritchie,
Alex Hamilton
Abstract:
Many modern spin-based devices rely on the spin-orbit interaction, which is highly sensitive to the host semiconductor heterostructure and varies substantially depending on crystal direction, crystal asymmetry (Dresselhaus), and quantum confinement asymmetry (Rashba). One-dimensional quantum point contacts are a powerful tool to probe both energy and directional dependence of spin-orbit interactio…
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Many modern spin-based devices rely on the spin-orbit interaction, which is highly sensitive to the host semiconductor heterostructure and varies substantially depending on crystal direction, crystal asymmetry (Dresselhaus), and quantum confinement asymmetry (Rashba). One-dimensional quantum point contacts are a powerful tool to probe both energy and directional dependence of spin-orbit interaction through the effect on the hole $g$-factor. In this work we investigate the role of cubic crystal asymmetry in driving an oscillation in the in-plane hole $g$-factor anisotropy when the quantum point contact is rotated with respect to the crystal axes, and we are able to separate contributions to the Zeeman Hamiltonian arising from Rashba and cubic crystal asymmetry spin-orbit interactions. The in-plane $g$-factor is found to be extremely sensitive to the orientation of the quantum point contact, changing by a factor of $5$ when rotated by $45^{\circ}$. This exceptionally strong crystal lattice anisotropy of the in-plane Zeeman splitting cannot be explained within axially symmetric theoretical models. Theoretical modelling based on the combined Luttinger, Rashba and Dresselhaus Hamiltonians that we use here reveals new spin-orbit contributions to the in-plane hole $g$-factor and provides an excellent agreement with our experimental data.
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Submitted 7 November, 2022; v1 submitted 31 October, 2022;
originally announced November 2022.
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Time-resolved Coulomb collision of single electrons
Authors:
J. D. Fletcher,
W. Park,
S. Ryu,
P. See,
J. P. Griffiths,
G. A. C. Jones,
I. Farrer,
D. A. Ritchie,
H. -S. Sim,
M. Kataoka
Abstract:
Precise control over interactions between ballistic electrons will enable us to exploit Coulomb interactions in novel ways, to develop high-speed sensing, to reach a non-linear regime in electron quantum optics and to realise schemes for fundamental two-qubit operations on flying electrons. Time-resolved collisions between electrons have been used to probe the indistinguishability, Wigner function…
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Precise control over interactions between ballistic electrons will enable us to exploit Coulomb interactions in novel ways, to develop high-speed sensing, to reach a non-linear regime in electron quantum optics and to realise schemes for fundamental two-qubit operations on flying electrons. Time-resolved collisions between electrons have been used to probe the indistinguishability, Wigner function and decoherence of single electron wavepackets. Due to the effects of screening, none of these experiments were performed in a regime where Coulomb interactions were particularly strong. Here we explore the Coulomb collision of two high energy electrons in counter-propagating ballistic edge states. We show that, in this kind of unscreened device, the partitioning probabilities at different electron arrival times and barrier height are shaped by Coulomb repulsion between the electrons. This prevents the wavepacket overlap required for the manifestation of fermionic exchange statistics but suggests a new class of devices for studying and manipulating interactions of ballistic single electrons.
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Submitted 7 October, 2022;
originally announced October 2022.
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Spin polarisation and spin dependent scattering of holes in transverse magnetic focussing
Authors:
M. J. Rendell,
S. D. Liles,
A. Srinivasan,
O. Klochan,
I. Farrer,
D. A. Ritchie,
A. R. Hamilton
Abstract:
In 2D systems with a spin-orbit interaction, magnetic focussing can be used to create a spatial separation of particles with different spin. Here we measure hole magnetic focussing for two different magnitudes of the Rashba spin-orbit interaction. We find that when the Rashba spin-orbit magnitude is large there is significant attenuation of one of the focussing peaks, which is conventionally assoc…
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In 2D systems with a spin-orbit interaction, magnetic focussing can be used to create a spatial separation of particles with different spin. Here we measure hole magnetic focussing for two different magnitudes of the Rashba spin-orbit interaction. We find that when the Rashba spin-orbit magnitude is large there is significant attenuation of one of the focussing peaks, which is conventionally associated with a change in the spin polarisation. We instead show that in hole systems with a $k^3$ spin-orbit interaction, this peak suppression is due to a change in the scattering of one spin state, not a change in spin polarisation. We also show that the change in scattering length extracted from magnetic focussing is consistent with results obtained from measurements of Shubnikov-de Haas oscillations. This result suggests that scattering must be considered when relating focussing peak amplitude to spin polarisation in hole systems
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Submitted 7 October, 2022;
originally announced October 2022.
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Gate voltage dependent Rashba spin splitting in hole transverse magnetic focussing
Authors:
M. J. Rendell,
S. D. Liles,
A. Srinivasan,
O. Klochan,
I. Farrer,
D. A. Ritchie,
A. R. Hamilton
Abstract:
Magnetic focussing of charge carriers in two-dimensional systems provides a solid state version of a mass spectrometer. In the presence of a spin-orbit interaction, the first focussing peak splits into two spin dependent peaks, allowing focussing to be used to measure spin polarisation and the strength of the spin-orbit interaction. In hole systems, the k^3 dependence of the Rashba spin-orbit term…
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Magnetic focussing of charge carriers in two-dimensional systems provides a solid state version of a mass spectrometer. In the presence of a spin-orbit interaction, the first focussing peak splits into two spin dependent peaks, allowing focussing to be used to measure spin polarisation and the strength of the spin-orbit interaction. In hole systems, the k^3 dependence of the Rashba spin-orbit term allows the spatial separation of spins to be changed in-situ using a voltage applied to an overall top gate. Here we demonstrate that this can be used to control the splitting of the magnetic focussing peaks. Additionally, we compare the focussing peak splitting to that predicted by Shubnikov-de Haas oscillations and k.p bandstructure calculations. We find that the focussing peak splitting is consistently larger than expected, suggesting further work is needed on understanding spin dependent magnetic focussing.
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Submitted 3 April, 2022;
originally announced April 2022.
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Two-particle time-domain interferometry in the Fractional Quantum Hall Effect regime
Authors:
I. Taktak,
M. Kapfer,
J. Nath,
P. Roulleau,
M. Acciai,
J. Splettstoesser,
I. Farrer,
D. A. Ritchie,
D. C. Glattli
Abstract:
Quasi-particles are elementary excitations of condensed matter quantum phases. Demonstrating that they keep quantum coherence while propagating is a fundamental issue for their manipulation for quantum information tasks. Here, we consider anyons, the fractionally charged quasi-particles 20 of the Fractional Quantum Hall Effect occurring in two-dimensional electronic conductors in high magnetic fie…
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Quasi-particles are elementary excitations of condensed matter quantum phases. Demonstrating that they keep quantum coherence while propagating is a fundamental issue for their manipulation for quantum information tasks. Here, we consider anyons, the fractionally charged quasi-particles 20 of the Fractional Quantum Hall Effect occurring in two-dimensional electronic conductors in high magnetic fields. They obey anyonic statistics, intermediate between fermionic and bosonic. Surprisingly, anyons show large quantum coherence when transmitted through the localized states of electronic Fabry-Pérot interferometers, but almost no quantum interference when transmitted via the propagating states of Mach-Zehnder interferometers. Here, using a novel interferometric 25 approach, we demonstrate that anyons do keep quantum coherence while propagating. Performing two-particle time-domain interference measurements sensitive to the two-particle Hanbury Brown Twiss phase, we find 53% and 60% visibilities for anyons with charges e/5 and e/3. Our results give a positive message for the challenge of performing controlled quantum coherent braiding of anyons.
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Submitted 2 September, 2022; v1 submitted 24 January, 2022;
originally announced January 2022.
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Decoupling of the many-body effects from the electron mass in GaAs by means of reduced dimensionality
Authors:
P. M. T. Vianez,
Y. Jin,
W. K. Tan,
Q. Liu,
J. P. Griffiths,
I. Farrer,
D. A. Ritchie,
O. Tsyplyatyev,
C. J. B. Ford
Abstract:
Determining the (bare) electron mass $m_0$ in crystals is often hindered by many-body effects since Fermi-liquid physics renormalises the band mass, making the observed effective mass $m^*$ depend on density. Here, we use a one-dimensional (1D) geometry to amplify the effect of interactions, forcing the electrons to form a nonlinear Luttinger liquid with separate holon and spinon bands, therefore…
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Determining the (bare) electron mass $m_0$ in crystals is often hindered by many-body effects since Fermi-liquid physics renormalises the band mass, making the observed effective mass $m^*$ depend on density. Here, we use a one-dimensional (1D) geometry to amplify the effect of interactions, forcing the electrons to form a nonlinear Luttinger liquid with separate holon and spinon bands, therefore separating the interaction effects from $m_0$. Measuring the spectral function of gated quantum wires formed in GaAs by means of magnetotunnelling spectroscopy and interpreting them using the 1D Fermi-Hubbard model, we obtain $m_0=(0.0525\pm0.0015)m_\textrm{e}$ in this material, where $m_\textrm{e}$ is the free-electron mass. By varying the density in the wires, we change the interaction parameter $r_\textrm{s}$ in the range from $\sim$1-4 and show that $m_0$ remains constant. The determined value of $m_0$ is $\sim 22$% lighter than observed in GaAs in geometries of higher dimensionality $D$ ($D>1$), consistent with the quasi-particle picture of a Fermi liquid that makes electrons heavier in the presence of interactions.
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Submitted 14 March, 2023; v1 submitted 27 October, 2021;
originally announced October 2021.
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Cooling low-dimensional electron systems into the microkelvin regime
Authors:
Lev V. Levitin,
Harriet van der Vliet,
Terje Theisen,
Stefanos Dimitriadis,
Marijn Lucas,
Antonio D. Corcoles,
Ján Nyéki,
Andrew J. Casey,
Graham Creeth,
Ian Farrer,
David A. Ritchie,
James T. Nicholls,
John Saunders
Abstract:
Two-dimensional electron gases (2DEGs) with high mobility, engineered in semiconductor heterostructures host a variety of ordered phases arising from strong correlations, which emerge at sufficiently low temperatures. The 2DEG can be further controlled by surface gates to create quasi-one dimensional systems, with potential spintronic applications. Here we address the long-standing challenge of co…
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Two-dimensional electron gases (2DEGs) with high mobility, engineered in semiconductor heterostructures host a variety of ordered phases arising from strong correlations, which emerge at sufficiently low temperatures. The 2DEG can be further controlled by surface gates to create quasi-one dimensional systems, with potential spintronic applications. Here we address the long-standing challenge of cooling such electrons to below 1$\,$mK, potentially important for identification of topological phases and spin correlated states. The 2DEG device was immersed in liquid $^3$He, cooled by the nuclear adiabatic demagnetization of copper. The temperature of the 2D electrons was inferred from the electronic noise in a gold wire, connected to the 2DEG by a metallic ohmic contact. With effective screening and filtering, we demonstrate a temperature of 0.9$\,\pm\,$0.1$\,$mK, with scope for significant further improvement. This platform is a key technological step, paving the way to observing new quantum phenomena, and developing new generations of nanoelectronic devices exploiting correlated electron states.
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Submitted 17 February, 2022; v1 submitted 5 October, 2021;
originally announced October 2021.
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Engineering electron wavefunctions in asymmetrically confined quasi one-dimensional structures
Authors:
S. Kumar,
M. Pepper,
H. Montagu,
D. Ritchie,
I. Farrer,
J. Griffiths,
G. Jones
Abstract:
We present results on electron transport in quasi-one dimensional (1D) quantum wires in GaAs/AlGaAs heterostructures obtained using an asymmetric confinement potential. The variation of the energy levels of the spatially quantized states is followed from strong confinement through weak confinement to the onset of two-dimensionality. An anticrossing of the initial ground and first excited states is…
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We present results on electron transport in quasi-one dimensional (1D) quantum wires in GaAs/AlGaAs heterostructures obtained using an asymmetric confinement potential. The variation of the energy levels of the spatially quantized states is followed from strong confinement through weak confinement to the onset of two-dimensionality. An anticrossing of the initial ground and first excited states is found as the asymmetry of the potential is varied giving rise to two anticrossing events which occur on either side of symmetric confinement. We present results analysing this behaviour and showing how it can be affected by the inhomogeneity in background potential. The use of an enhanced source-drain voltage to alter the energy levels is shown to be a significant validation of the analysis by showing the formation of double rows of electrons which correlate with the anticrossing.
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Submitted 18 March, 2021;
originally announced March 2021.
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Geometric control of universal hydrodynamic flow in a two dimensional electron fluid
Authors:
Aydın Cem Keser,
Daisy Q. Wang,
Oleh Klochan,
Derek Y. H. Ho,
Olga A. Tkachenko,
Vitaly A. Tkachenko,
Dimitrie Culcer,
Shaffique Adam,
Ian Farrer,
David A. Ritchie,
Oleg P. Sushkov,
Alexander R. Hamilton
Abstract:
Fluid dynamics is one of the cornerstones of modern physics and has recently found applications in the transport of electrons in solids. In most solids electron transport is dominated by extrinsic factors, such as sample geometry and scattering from impurities. However in the hydrodynamic regime Coulomb interactions transform the electron motion from independent particles to the collective motion…
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Fluid dynamics is one of the cornerstones of modern physics and has recently found applications in the transport of electrons in solids. In most solids electron transport is dominated by extrinsic factors, such as sample geometry and scattering from impurities. However in the hydrodynamic regime Coulomb interactions transform the electron motion from independent particles to the collective motion of a viscous `electron fluid'. The fluid viscosity is an intrinsic property of the electron system, determined solely by the electron-electron interactions. Resolving the universal intrinsic viscosity is challenging, as it only affects the resistance through interactions with the sample boundaries, whose roughness is not only unknown but also varies from device to device. Here we eliminate all unknown parameters by fabricating samples with smooth sidewalls to achieve the perfect slip boundary condition, which has been elusive both in molecular fluids and electronic systems. We engineer the device geometry to create viscous dissipation and reveal the true intrinsic hydrodynamic properties of a 2D system. We observe a clear transition from ballistic to hydrodynamic electron motion, driven by both temperature and magnetic field. We directly measure the viscosity and electron-electron scattering lifetime (the Fermi quasiparticle lifetime) over a wide temperature range without fitting parameters, and show they have a strong dependence on electron density that cannot be explained by conventional theories based on the Random Phase Approximation.
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Submitted 17 March, 2021;
originally announced March 2021.
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Microscopic metallic air-bridge arrays for connecting quantum devices
Authors:
Y. Jin,
M. Moreno,
P. M. T. Vianez,
W. K. Tan,
J. P. Griffiths,
I. Farrer,
D. A. Ritchie,
C. J. B. Ford
Abstract:
We present a single-exposure fabrication technique for a very large array of microscopic air-bridges using a tri-layer resist process with electron-beam lithography. The technique is capable of forming air-bridges with strong metal-metal or metal-substrate connections. This was demonstrated by its application in an electron tunnelling device consisting of 400 identical surface gates for defining q…
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We present a single-exposure fabrication technique for a very large array of microscopic air-bridges using a tri-layer resist process with electron-beam lithography. The technique is capable of forming air-bridges with strong metal-metal or metal-substrate connections. This was demonstrated by its application in an electron tunnelling device consisting of 400 identical surface gates for defining quantum wires, where the air-bridges are used as suspended connections for the surface gates. This technique enables us to create a large array of uniform one-dimensional channels that are open at both ends. In this article, we outline the details of the fabrication process, together with a study and the solution of the challenges present in the development of the technique, which includes the use of water-IPA (isopropyl alcohol) developer, calibration of resist thickness and numerical simulation of the development.
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Submitted 21 April, 2021; v1 submitted 11 February, 2021;
originally announced February 2021.
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Observing separate spin and charge Fermi seas in a strongly correlated one-dimensional conductor
Authors:
P. M. T. Vianez,
Y. Jin,
M. Moreno,
A. S. Anirban,
A. Anthore,
W. K. Tan,
J. P. Griffiths,
I. Farrer,
D. A. Ritchie,
A. J. Schofield,
O. Tsyplyatyev,
C. J. B. Ford
Abstract:
An electron is usually considered to have only one form of kinetic energy, but could it have more, for its spin and charge, by exciting other electrons? In one dimension (1D), the physics of interacting electrons is captured well at low energies by the Tomonaga-Luttinger model, yet little has been observed experimentally beyond this linear regime. Here, we report on measurements of many-body modes…
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An electron is usually considered to have only one form of kinetic energy, but could it have more, for its spin and charge, by exciting other electrons? In one dimension (1D), the physics of interacting electrons is captured well at low energies by the Tomonaga-Luttinger model, yet little has been observed experimentally beyond this linear regime. Here, we report on measurements of many-body modes in 1D gated-wires using tunnelling spectroscopy. We observe two parabolic dispersions, indicative of separate Fermi seas at high energies, associated with spin and charge excitations, together with the emergence of two additional 1D 'replica' modes that strengthen with decreasing wire length. The effective interaction strength is varied by changing the amount of 1D inter-subband screening by over 45%. Our findings demonstrate the existence of spin-charge separation in the whole energy band outside the low-energy limit of validity of the Tomonaga-Luttinger model, and also set a constraint on the validity of the newer nonlinear Tomonaga-Luttinger theory.
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Submitted 1 July, 2022; v1 submitted 10 February, 2021;
originally announced February 2021.
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Effects of biased and unbiased illuminations on dopant-free GaAs/AlGaAs 2DEGs
Authors:
A. Shetty,
F. Sfigakis,
W. Y. Mak,
K. Das Gupta,
B. Buonacorsi,
M. C. Tam,
H. S. Kim,
I. Farrer,
A. F. Croxall,
H. E. Beere,
A. R. Hamilton,
M. Pepper,
D. G. Austing,
S. A. Studenikin,
A. Sachrajda,
M. E. Reimer,
Z. R. Wasilewski,
D. A. Ritchie,
J. Baugh
Abstract:
Illumination is performed at low temperature on dopant-free two-dimensional electron gases (2DEGs) of varying depths, under unbiased (gates grounded) and biased (gates at a positive or negative voltage) conditions. Unbiased illuminations in 2DEGs located more than 70 nm away from the surface result in a gain in mobility at a given electron density, primarily driven by the reduction of background i…
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Illumination is performed at low temperature on dopant-free two-dimensional electron gases (2DEGs) of varying depths, under unbiased (gates grounded) and biased (gates at a positive or negative voltage) conditions. Unbiased illuminations in 2DEGs located more than 70 nm away from the surface result in a gain in mobility at a given electron density, primarily driven by the reduction of background impurities. In 2DEGs closer to the surface, unbiased illuminations result in a mobility loss, driven by an increase in surface charge density. Biased illuminations performed with positive applied gate voltages result in a mobility gain, whereas those performed with negative applied voltages result in a mobility loss. The magnitude of the mobility gain (loss) weakens with 2DEG depth, and is likely driven by a reduction (increase) in surface charge density. Remarkably, this mobility gain/loss is fully reversible by performing another biased illumination with the appropriate gate voltage, provided both n-type and p-type ohmic contacts are present. Experimental results are modeled with Boltzmann transport theory, and possible mechanisms are discussed.
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Submitted 21 December, 2021; v1 submitted 28 December, 2020;
originally announced December 2020.
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Improving reproducibility of quantum devices with completely undoped architectures
Authors:
A. Srinivasan,
I. Farrer,
D. A. Ritchie,
A. R. Hamilton
Abstract:
The reproducible operation of quantum electronic devices is a key requirement for future quantum information processing and spintronics applications. Traditionally quantum devices have been fabricated from modulation doped heterostructures, where there is an intrinsic lack of reproducibility due to the random potential from ionized donors. Here we show that we can greatly improve reproducibility o…
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The reproducible operation of quantum electronic devices is a key requirement for future quantum information processing and spintronics applications. Traditionally quantum devices have been fabricated from modulation doped heterostructures, where there is an intrinsic lack of reproducibility due to the random potential from ionized donors. Here we show that we can greatly improve reproducibility over modulation doped devices by using a completely undoped architecture, with superior uniformity in the confinement potential and more consistent operating voltages for both electron and hole devices. Our results demonstrate that undoped heterostructures have significant advantages over modulation doping for reproducible manufacturing of quantum devices.
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Submitted 8 November, 2020;
originally announced November 2020.
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Experimental evidence for topological phases in the magnetoconductance of 2DEG-based hybrid junctions
Authors:
Kaveh Delfanazari,
Llorenc Serra,
Pengcheng Ma,
Reuben K. Puddy,
Teng Yi,
Moda Cao,
Yilmaz Gul,
Ian Farrer,
David A. Ritchie,
Hannah J. Joyce,
Michael J. Kelly,
Charles G. Smith
Abstract:
While the application of out-of-plane magnetic fields was, so far, believed to be detrimental for the formation of Majorana phases in artificially engineered hybrid superconducting-semiconducting junctions, several recent theoretical studies have found it indeed useful in establishing such topological phases 1-5. Majorana phases emerge as quantized plateaus in the magnetoconductance of the hybrid…
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While the application of out-of-plane magnetic fields was, so far, believed to be detrimental for the formation of Majorana phases in artificially engineered hybrid superconducting-semiconducting junctions, several recent theoretical studies have found it indeed useful in establishing such topological phases 1-5. Majorana phases emerge as quantized plateaus in the magnetoconductance of the hybrid junctions based on two-dimensional electron gases (2DEG) under fully out-of-plane magnetic fields. The large transverse Rashba spin-orbit interaction in 2DEG, together with a strong magneto-orbital effect, yield topological phase transitions to nontrivial phases hosting Majorana modes. Such Majorana modes are formed at the ends of 2DEG-based wires with a hybrid superconductor-semiconductor integrity. Here, we report on the experimental observation of such topological phases in Josephson junctions, based on In0.75Ga0.25As 2DEG, by sweeping out-of-plane magnetic fields of as small as 0 < B(mT) < 100 and probing the conductance to highlight the characteristic quantized magnetoconductance plateaus. Our approaches towards (i) creation and detection of topological phases in small out-of-plane magnetic fields, and (ii) integration of an array of topological Josephson junctions on a single chip pave the ways for the development of scalable quantum integrated circuits for their potential applications in fault-tolerant quantum processing and computing.
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Submitted 8 August, 2020; v1 submitted 4 July, 2020;
originally announced July 2020.
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Demonstration of electron focusing using electronic lenses in low-dimensional system
Authors:
Chengyu Yan,
Michael Pepper,
Patrick See,
Ian Farrer,
David Ritchie,
Jonathan Griffiths
Abstract:
We report an all-electric integrable electron focusing lens in n-type GaAs. It is shown that a pronounced focusing peak takes place when the focal point aligns with an on-chip detector. The intensity and full width half maximum (FWHM) of the focusing peak are associated with the collimation of injected electrons. To demonstrate the reported focusing lens can be a useful tool, we investigate charac…
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We report an all-electric integrable electron focusing lens in n-type GaAs. It is shown that a pronounced focusing peak takes place when the focal point aligns with an on-chip detector. The intensity and full width half maximum (FWHM) of the focusing peak are associated with the collimation of injected electrons. To demonstrate the reported focusing lens can be a useful tool, we investigate characteristic of an asymmetrically gate biased quantum point contact with the assistance of focusing lens. A correlation between the occurrence of conductance anomaly in low conductance regime and increase in FWHM of focusing peak is observed. The correlation is likely due to the electron-electron interaction. The reported electron focusing lens is essential for a more advanced electron optics device.
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Submitted 11 February, 2020;
originally announced February 2020.
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Active reset of a radiative cascade for superequilibrium entangled photon generation
Authors:
Jonathan R. A. Müller,
R. Mark Stevenson,
Joanna Skiba-Szymanska,
Ginny Shooter,
Jan Huwer,
Ian Farrer,
David A. Ritchie,
Andrew J. Shields
Abstract:
The generation rate of entangled photons emitted from cascaded few-level systems is intrinsically limited by the lifetime of the radiative transitions. Here, we overcome this limit for entangled photon pairs from quantum dots via a novel driving regime based on an active reset of the radiative cascade. We show theoretically and experimentally the driving regime to enable the generation of entangle…
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The generation rate of entangled photons emitted from cascaded few-level systems is intrinsically limited by the lifetime of the radiative transitions. Here, we overcome this limit for entangled photon pairs from quantum dots via a novel driving regime based on an active reset of the radiative cascade. We show theoretically and experimentally the driving regime to enable the generation of entangled photon pairs with higher fidelity and intensity compared to the optimum continuously driven equilibrium state. Finally, we electrically generate entangled photon pairs with a total fidelity of $(79.5 \pm 1.1)\%$ at a record clock rate of 1.15GHz.
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Submitted 17 January, 2020;
originally announced January 2020.
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A Semiconductor Topological Photonic Ring Resonator
Authors:
M. Jalali Mehrabad,
A. P. Foster,
R. Dost,
E. Clarke,
P. K. Patil,
I. Farrer,
J. Heffernan,
M. S. Skolnick,
L. R. Wilson
Abstract:
Unidirectional photonic edge states arise at the interface between two topologically-distinct photonic crystals. Here, we demonstrate a micron-scale GaAs photonic ring resonator, created using a spin Hall-type topological photonic crystal waveguide. Embedded InGaAs quantum dots are used to probe the mode structure of the device. We map the spatial profile of the resonator modes, and demonstrate co…
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Unidirectional photonic edge states arise at the interface between two topologically-distinct photonic crystals. Here, we demonstrate a micron-scale GaAs photonic ring resonator, created using a spin Hall-type topological photonic crystal waveguide. Embedded InGaAs quantum dots are used to probe the mode structure of the device. We map the spatial profile of the resonator modes, and demonstrate control of the mode confinement through tuning of the photonic crystal lattice parameters. The intrinsic chirality of the edge states makes them of interest for applications in integrated quantum photonics, and the resonator represents an important building block towards the development of such devices with embedded quantum emitters.
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Submitted 10 February, 2020; v1 submitted 16 October, 2019;
originally announced October 2019.
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Quantised Charge Transport driven by a Surface Acoustic Wave in induced unipolar and bipolar junctions
Authors:
Yousun Chung,
Hangtian Hou,
Seok-Kyun Son,
Tzu-Kan Hsiao,
Ateeq Nasir,
Antonio Rubino,
Jonathan P. Griffiths,
Ian Farrer,
David A. Ritchie,
Christopher J. B. Ford
Abstract:
Surface acoustic waves (SAWs) have been used to transport single electrons across long distances of several hundreds of microns. They can potentially be instrumental in the implementation of scalable quantum processors and quantum repeaters, by facilitating interaction between distant qubits. While most of the work thus far has focused on SAW devices in doped GaAs/AlGaAs heterostructures, we have…
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Surface acoustic waves (SAWs) have been used to transport single electrons across long distances of several hundreds of microns. They can potentially be instrumental in the implementation of scalable quantum processors and quantum repeaters, by facilitating interaction between distant qubits. While most of the work thus far has focused on SAW devices in doped GaAs/AlGaAs heterostructures, we have developed a method of creating lateral p-n junctions in an undoped heterostructure containing a quantum well, with the expected advantages of having reduced charge noise and increased spin-coherence lifetimes due to the lack of dopant scattering centres. We present experimental observations of SAW-driven single-electron quantised current in an undoped GaAs/AlGaAs heterostructure, where single electrons were transported between regions of induced electrons. We also demonstrate pumping of electrons by a SAW across the sub-micron depleted channel between regions of electrons and holes, and observe light emission at such a lateral p-n junction. Improving the lateral confinement in the junction should make it possible to produce a quantised electron-to-hole current and hence SAW-driven emission of single photons.
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Submitted 11 October, 2019;
originally announced October 2019.
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A tuneable telecom-wavelength entangled light emitting diode
Authors:
Z. -H. Xiang,
J. Huwer,
J. Skiba-Szymanska,
R. M. Stevenson,
D. J. P. Ellis,
I. Farrer,
M. B. Ward,
D. A. Ritchie,
A. J. Shields
Abstract:
Entangled light emitting diodes based on semiconductor quantum dots are promising devices for security sensitive quantum network applications, thanks to their natural lack of multi photon-pair generation. Apart from telecom wavelength emission, network integrability of these sources ideally requires electrical operation for deployment in compact systems in the field. For multiplexing of entangled…
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Entangled light emitting diodes based on semiconductor quantum dots are promising devices for security sensitive quantum network applications, thanks to their natural lack of multi photon-pair generation. Apart from telecom wavelength emission, network integrability of these sources ideally requires electrical operation for deployment in compact systems in the field. For multiplexing of entangled photons with classical data traffic, emission in the telecom O-band and tuneability to the nearest wavelength channel in compliance with coarse wavelength division multiplexing standards (20 nm channel spacing) is highly desirable. Here we show the first fully electrically operated telecom entangled light emitting diode with wavelength tuneability of more than 25nm, deployed in an installed fiber network. With the source tuned to 1310.00 nm, we demonstrate multiplexing of true single entangled photons with classical data traffic and achieve entanglement fidelities above 95% on an installed fiber in a city.
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Submitted 26 September, 2019;
originally announced September 2019.
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Photon phase shift at the few-photon level and optical switching by a quantum dot in a microcavity
Authors:
L. M. Wells,
S. Kalliakos,
B. Villa,
D. J. P. Ellis,
R. M. Stevenson,
A. J. Bennett,
I. Farrer,
D. A. Ritchie,
A. J. Shields
Abstract:
We exploit the nonlinearity arising from the spin-photon interaction in an InAs quantum dot to demonstrate phase shifts of scattered light pulses at the single-photon level. Photon phase shifts of close to 90 degrees are achieved using a charged quantum dot in a micropillar cavity. We also demonstrate a photon phase switch by using a spin-pumping mechanism through Raman transitions in an in-plane…
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We exploit the nonlinearity arising from the spin-photon interaction in an InAs quantum dot to demonstrate phase shifts of scattered light pulses at the single-photon level. Photon phase shifts of close to 90 degrees are achieved using a charged quantum dot in a micropillar cavity. We also demonstrate a photon phase switch by using a spin-pumping mechanism through Raman transitions in an in-plane magnetic field. The experimental findings are supported by a theoretical model which explores the dynamics of the system. Our results demonstrate the potential of quantum dot-induced nonlinearities for quantum information processing.
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Submitted 18 July, 2019;
originally announced July 2019.
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Non-linear spin filter for non-magnetic materials at zero magnetic field
Authors:
E. Marcellina,
A. Srinivasan,
F. Nichele,
P. Stano,
D. A. Ritchie,
I. Farrer,
Dimitrie Culcer,
A. R. Hamilton
Abstract:
The ability to convert spin accumulation to charge currents is essential for applications in spintronics. In semiconductors, spin-to-charge conversion is typically achieved using the inverse spin Hall effect or using a large magnetic field. Here we demonstrate a general method that exploits the non-linear interactions between spin and charge currents to perform all-electrical, rapid and non-invasi…
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The ability to convert spin accumulation to charge currents is essential for applications in spintronics. In semiconductors, spin-to-charge conversion is typically achieved using the inverse spin Hall effect or using a large magnetic field. Here we demonstrate a general method that exploits the non-linear interactions between spin and charge currents to perform all-electrical, rapid and non-invasive detection of spin accumulation without the need for a magnetic field. We demonstrate the operation of this technique with ballistic GaAs holes as a model system with strong spin-orbit coupling, in which a quantum point contact provides the non-linear energy filter. This approach is generally applicable to electron and hole systems with strong spin orbit coupling.
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Submitted 22 October, 2020; v1 submitted 2 July, 2019;
originally announced July 2019.
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Thermoelectric property of a one dimensional channel in the presence of a transverse magnetic field
Authors:
Chengyu Yan,
Michael Pepper,
Patrick See,
Ian Farrer,
David Ritchie,
Jonathan Griffiths
Abstract:
We studied the thermal conduction through a quantum point contact (QPC), defined in GaAs-AlGaAs heterostructure, in the presence of a transverse magnetic field. A shift in the position of thermo-voltage peak is observed with increasing field. The position of the thermo-voltage peak follows the Cutler-Mott relation in the small field regime (B < 0.5 T); it starts diverging from the Cutler-Mott rela…
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We studied the thermal conduction through a quantum point contact (QPC), defined in GaAs-AlGaAs heterostructure, in the presence of a transverse magnetic field. A shift in the position of thermo-voltage peak is observed with increasing field. The position of the thermo-voltage peak follows the Cutler-Mott relation in the small field regime (B < 0.5 T); it starts diverging from the Cutler-Mott relation in the moderate field regime, where a cubic magnetic field term dominates over the trivial quadratic term; eventually the shift saturates in the large field regime (B > 3.0 T). Our results suggest that additional calibration is necessary when using QPC as thermometry, especially when the transverse magnetic field is applied.
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Submitted 8 November, 2019; v1 submitted 14 March, 2019;
originally announced March 2019.
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Orientation of hole quantum Hall nematic phases in an out-of-plane electric field
Authors:
A. F. Croxall,
F. Sfigakis,
J. Waldie,
I. Farrer,
D. A. Ritchie
Abstract:
We present observations of an anisotropic resistance state at Landau level filling factor $ν=5/2$ in a two-dimensional hole system (2DHS), which occurs for certain values of hole density $p$ and average out-of-plane electric field $E_\perp$. The 2DHS is induced by electric field effect in an undoped GaAs/AlGaAs quantum well, where front and back gates allow independent tuning of $p$ and $E_\perp$,…
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We present observations of an anisotropic resistance state at Landau level filling factor $ν=5/2$ in a two-dimensional hole system (2DHS), which occurs for certain values of hole density $p$ and average out-of-plane electric field $E_\perp$. The 2DHS is induced by electric field effect in an undoped GaAs/AlGaAs quantum well, where front and back gates allow independent tuning of $p$ and $E_\perp$, and hence the symmetry of the confining potential. For $p\approx2\times10^{11}$~cm$^{-2}$ and $E_\perp \approx -2 \times10^{5}$~V/m, the magnetoresistance along $\langle01\bar1\rangle$ greatly exceeds that along $\langle011\rangle$, suggesting the formation of a quantum Hall nematic or `stripe' phase. Reversing the sign of $E_\perp$ rotates the stripes by $90^{\circ}$. We suggest this behavior may arise from the mixing of the hole Landau levels and a combination of the Rashba and Dresselhaus spin-orbit coupling effects.
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Submitted 14 May, 2019; v1 submitted 7 March, 2019;
originally announced March 2019.
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Continuous-Variable Tomography of Solitary Electrons
Authors:
J. D. Fletcher,
N. Johnson,
E. Locane,
P. See,
J. P. Griffiths,
I. Farrer,
D. A. Ritchie,
P. W. Brouwer,
V. Kashcheyevs,
M. Kataoka
Abstract:
A method for characterising the wave-function of freely-propagating particles would provide a useful tool for developing quantum-information technologies with single electronic excitations. Previous continuous-variable quantum tomography techniques developed to analyse electronic excitations in the energy-time domain have been limited to energies close to the Fermi level. We show that a wideband t…
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A method for characterising the wave-function of freely-propagating particles would provide a useful tool for developing quantum-information technologies with single electronic excitations. Previous continuous-variable quantum tomography techniques developed to analyse electronic excitations in the energy-time domain have been limited to energies close to the Fermi level. We show that a wideband tomography of single-particle distributions is possible using energy-time filtering and that the Wigner representation of the mixed-state density matrix can be reconstructed for solitary electrons emitted by an on-demand single-electron source. These are highly localised distributions, isolated from the Fermi sea. While we cannot resolve the pure state Wigner function of our excitations due to classical fluctuations, we can partially resolve the chirp and squeezing of the Wigner function imposed by emission conditions and quantify the quantumness of the source. This tomography scheme, when implemented with sufficient experimental resolution, will enable quantum-limited measurements, providing information on electron coherence and entanglement at the individual particle level.
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Submitted 20 January, 2020; v1 submitted 30 January, 2019;
originally announced January 2019.
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Experimental realization of a quantum dot energy harvester
Authors:
G. Jaliel,
R. K. Puddy,
R. Sánchez,
A. N. Jordan,
B. Sothmann,
I. Farrer,
J. P. Griffiths,
D. A. Ritchie,
C. G. Smith
Abstract:
We demonstrate experimentally an autonomous nanoscale energy harvester that utilises the physics of resonant tunnelling quantum dots. Gate defined quantum dots on GaAs/AlGaAs high-electron-mobility transistors are placed on either side of a hot electron reservoir. The discrete energy levels of the quantum dots are tuned to be aligned with low energy electrons on one side and high energy electrons…
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We demonstrate experimentally an autonomous nanoscale energy harvester that utilises the physics of resonant tunnelling quantum dots. Gate defined quantum dots on GaAs/AlGaAs high-electron-mobility transistors are placed on either side of a hot electron reservoir. The discrete energy levels of the quantum dots are tuned to be aligned with low energy electrons on one side and high energy electrons on the other side of the hot reservoir. The quantum dots thus act as energy filters and allow for the conversion of heat from the cavity into electrical power. This energy harvester device, measured at an estimated base temperature of 75 mK in a He3/He4 dilution refrigerator, can generate a thermal power of 0.13 fW when the temperature difference across each dot is about 67 mK.
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Submitted 1 October, 2019; v1 submitted 29 January, 2019;
originally announced January 2019.
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Single-photon Emission from an Acoustically-driven Lateral Light-emitting Diode
Authors:
Tzu-Kan Hsiao,
Antonio Rubino,
Yousun Chung,
Seok-Kyun Son,
Hangtian Hou,
Jorge Pedrós,
Ateeq Nasir,
Gabriel Éthier-Majcher,
Megan J. Stanley,
Richard T. Phillips,
Thomas A. Mitchell,
Jonathan P. Griffiths,
Ian Farrer,
David A. Ritchie,
Christopher J. B. Ford
Abstract:
Single-photon sources are essential building blocks in quantum photonic networks, where quantum-mechanical properties of photons are utilised to achieve quantum technologies such as quantum cryptography and quantum computing. Most conventional solid-state single-photon sources are based on single emitters such as self-assembled quantum dots, which are created at random locations and require spectr…
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Single-photon sources are essential building blocks in quantum photonic networks, where quantum-mechanical properties of photons are utilised to achieve quantum technologies such as quantum cryptography and quantum computing. Most conventional solid-state single-photon sources are based on single emitters such as self-assembled quantum dots, which are created at random locations and require spectral filtering. These issues hinder the integration of a single-photon source into a scaleable photonic quantum network for applications such as on-chip photonic quantum processors. In this work, using only regular lithography techniques on a conventional GaAs quantum well, we realise an electrically triggered single-photon source with a GHz repetition rate and without the need for spectral filtering. In this device, a single electron is carried in the potential minimum of a surface acoustic wave (SAW) and is transported to a region of holes to form an exciton. The exciton then decays and creates a single photon in a lifetime of ~ 100ps. This SAW-driven electroluminescence (EL) yields photon antibunching with $g^{(2)}(0) = 0.39 \pm 0.05$, which satisfies the common criterion for a single-photon source $g^{(2)}(0) < 0.5$. Furthermore, we estimate that if a photon detector receives a SAW-driven EL signal within one SAW period, this signal has a 79%-90% chance of being a single photon. This work shows that a single-photon source can be made by combining single-electron transport and a lateral n-i-p junction. This approach makes it possible to create multiple synchronised single-photon sources at chosen positions with photon energy determined by quantum-well thickness. Compared with conventional quantum-dot-based single-photon sources, this device may be more suitable for an on-chip integrated photonic quantum network.
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Submitted 10 January, 2019;
originally announced January 2019.
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Momentum-dependent power law measured in an interacting quantum wire beyond the Luttinger limit
Authors:
Y. Jin,
O. Tsyplyatyev,
M. Moreno,
A. Anthore,
W. K. Tan,
J. P. Griffiths,
I. Farrer,
D. A. Ritchie,
L. I. Glazman,
A. J. Schofield,
C. J. B. Ford
Abstract:
Power laws in physics have until now always been associated with a scale invariance originating from the absence of a length scale. Recently, an emergent invariance even in the presence of a length scale has been predicted by the newly-developed nonlinear-Luttinger-liquid theory for a one-dimensional (1D) quantum fluid at finite energy and momentum, at which the particle's wavelength provides the…
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Power laws in physics have until now always been associated with a scale invariance originating from the absence of a length scale. Recently, an emergent invariance even in the presence of a length scale has been predicted by the newly-developed nonlinear-Luttinger-liquid theory for a one-dimensional (1D) quantum fluid at finite energy and momentum, at which the particle's wavelength provides the length scale. We present the first experimental example of this new type of power law in the spectral function of interacting electrons in a quantum wire using a transport-spectroscopy technique. The observed momentum dependence of the power law in the high-energy region matches the theoretical predictions, supporting not only the 1D theory of interacting particles beyond the linear regime but also the existence of a new type of universality that emerges at finite energy and momentum.
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Submitted 8 November, 2018;
originally announced November 2018.
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Zero-Magnetic Field Fractional Quantum States
Authors:
S. Kumar,
M. Pepper,
S. N. Holmes,
H. Montagu,
Y. Gul,
D. A. Ritchie,
I. Farrer
Abstract:
Since the discovery of the Fractional Quantum Hall Effect in 1982 there has been considerable theoretical discussion on the possibility of fractional quantization of conductance in the absence of Landau levels formed by a quantizing magnetic field. Although various situations have been theoretically envisaged, particularly lattice models in which band flattening resembles Landau levels, the predic…
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Since the discovery of the Fractional Quantum Hall Effect in 1982 there has been considerable theoretical discussion on the possibility of fractional quantization of conductance in the absence of Landau levels formed by a quantizing magnetic field. Although various situations have been theoretically envisaged, particularly lattice models in which band flattening resembles Landau levels, the predicted fractions have never been observed. In this Letter, we show that odd and even denominator fractions can be observed, and manipulated, in the absence of a quantizing magnetic field, when a low-density electron system in a GaAs based one-dimensional quantum wire is allowed to relax in the second dimension. It is suggested that such a relaxation results in formation of a zig-zag array of electrons with ring paths which establish a cyclic current and a resultant lowering of energy. The behavior has been observed for both symmetric and asymmetric confinement but increasing the asymmetry of the confinement potential, to result in a flattening of confinement, enhances the appearance of new fractional states. We find that an in-plane magnetic field induces new even denominator fractions possibly indicative of electron pairing. The new quantum states described here have implications both for the physics of low dimensional electron systems and also for quantum technologies. This work will enable further development of structures which are designed to electrostatically manipulate the electrons for the formation of particular configurations. In turn, this could result in a designer tailoring of fractional states to amplify particular properties of importance in future quantum computation.
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Submitted 23 October, 2018;
originally announced October 2018.
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Radio-frequency reflectometry of a quantum dot using an ultra-low-noise SQUID amplifier
Authors:
F. J. Schupp,
F. Vigneau,
Y. Wen,
A. Mavalankar,
J. Griffiths,
G. A. C. Jones,
I. Farrer,
D. A. Ritchie,
C. G. Smith,
L. C. Camenzind,
L. Yu,
D. M. Zumbühl,
G. A. D. Briggs,
N. Ares,
E. A. Laird
Abstract:
Fault-tolerant spin-based quantum computers will require fast and accurate qubit readout. This can be achieved using radio-frequency reflectometry given sufficient sensitivity to the change in quantum capacitance associated with the qubit states. Here, we demonstrate a 23-fold improvement in capacitance sensitivity by supplementing a cryogenic semiconductor amplifier with a SQUID preamplifier. The…
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Fault-tolerant spin-based quantum computers will require fast and accurate qubit readout. This can be achieved using radio-frequency reflectometry given sufficient sensitivity to the change in quantum capacitance associated with the qubit states. Here, we demonstrate a 23-fold improvement in capacitance sensitivity by supplementing a cryogenic semiconductor amplifier with a SQUID preamplifier. The SQUID amplifier operates at a frequency near 200 MHz and achieves a noise temperature below 600 mK when integrated into a reflectometry circuit, which is within a factor 120 of the quantum limit. It enables a record sensitivity to capacitance of 0.07 aF/\sqrt{Hz}. The setup is used to acquire charge stability diagrams of a gate-defined double quantum dot in a short time with a signal-to-noise ration of about 38 in 1 microsecond of integration time.
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Submitted 29 June, 2020; v1 submitted 12 October, 2018;
originally announced October 2018.
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Rectification in mesoscopic AC-gated semiconductor devices
Authors:
S. P. Giblin,
M. Kataoka,
J. D. Fletcher,
P. See,
T. J. B. M. Janssen,
J. P. Griffiths,
G. A. C. Jones,
I. Farrer,
D. A. Ritchie
Abstract:
We measure the rectified dc currents resulting when a 3-terminal semiconductor device with gate-dependent conductance is driven with an ac gate voltage. The rectified currents exhibit surprisingly complex behaviour as the dc source-drain bias voltage, the dc gate voltage and the amplitude of the ac gate voltage are varied. We obtain good agreement between our data and a model based on simple assum…
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We measure the rectified dc currents resulting when a 3-terminal semiconductor device with gate-dependent conductance is driven with an ac gate voltage. The rectified currents exhibit surprisingly complex behaviour as the dc source-drain bias voltage, the dc gate voltage and the amplitude of the ac gate voltage are varied. We obtain good agreement between our data and a model based on simple assumptions about the stray impedances on the sample chip, over a wide frequency range. This method is applicable to many types of experiment which involve ac gating of a non-linear device, and where an undesireable rectified contribution to the measured signal is present. Finally, we evaluate the small rectified currents flowing in tunable-barrier electron pumps operated in the pinched-off regime. These currents are at most $10^{-12}$ of the pumped current for a pump current of 100 pA. This result is encouraging for the development of tunable-barrier pumps as metrological current standards.
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Submitted 27 September, 2018;
originally announced September 2018.
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Error detection in a tunable-barrier electron pump
Authors:
S. P. Giblin,
P. See,
J. D. Fletcher,
T. J. B. M. Janssen,
J. P. Griffiths,
G. A. C. Jones,
I. Farrer,
M. Kataoka
Abstract:
We measure the average number of electrons loaded into an electrostatically-defined quantum dot (QD) operated as a tunable-barrier electron pump, using a point-contact (PC) charge sensor 1 micron away from the QD. The measurement of the electron number probes the QD loading dynamics even in the limit of slow gate voltage rise-times, when the pumped current is too small to measure. Using simulation…
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We measure the average number of electrons loaded into an electrostatically-defined quantum dot (QD) operated as a tunable-barrier electron pump, using a point-contact (PC) charge sensor 1 micron away from the QD. The measurement of the electron number probes the QD loading dynamics even in the limit of slow gate voltage rise-times, when the pumped current is too small to measure. Using simulations we show that, with optimised QD-PC coupling, the experiment can make single-shot measurements of the number of electrons in the QD with sufficiently high fidelity to test the error rate of the electron pump with metrological precision.
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Submitted 26 September, 2018;
originally announced September 2018.
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High-resolution error detection in the capture process of a single-electron pump
Authors:
S. P. Giblin,
P. See,
A. Petrie,
T. J. B. M. Janssen,
I. Farrer,
J. P. Griffiths,
G. A. C. Jones,
D. A. Ritchie,
M. Kataoka
Abstract:
The dynamic capture of electrons in a semiconductor quantum dot (QD) by raising a potential barrier is a crucial stage in metrological quantized charge pumping. In this work, we use a quantum point contact (QPC) charge sensor to study errors in the electron capture process of a QD formed in a GaAs heterostructure. Using a two-step measurement protocol to compensate for $1/f$ noise in the QPC curre…
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The dynamic capture of electrons in a semiconductor quantum dot (QD) by raising a potential barrier is a crucial stage in metrological quantized charge pumping. In this work, we use a quantum point contact (QPC) charge sensor to study errors in the electron capture process of a QD formed in a GaAs heterostructure. Using a two-step measurement protocol to compensate for $1/f$ noise in the QPC current, and repeating the protocol more than $10^{6}$ times, we are able to resolve errors with probabilities of order $10^{-6}$. For the studied sample, one-electron capture is affected by errors in $\sim30$ out of every million cycles, while two-electron capture was performed more than $10^6$ times with only one error. For errors in one-electron capture, we detect both failure to capture an electron, and capture of two electrons. Electron counting measurements are a valuable tool for investigating non-equilibrium charge capture dynamics, and necessary for validating the metrological accuracy of semiconductor electron pumps.
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Submitted 26 September, 2018;
originally announced September 2018.
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Magnetoresistance in an electronic cavity coupled to one-dimensional systems
Authors:
Chengyu Yan,
Sanjeev Kumar,
Patrick See,
Ian Farrer,
David Ritchie,
J. P. Griffiths,
G. A. C. Jones,
Michael Pepper
Abstract:
In this work, we performed magnetoresistance measurement in a hybrid system consisting of an arc-shaped quantum point contact (QPC) and a flat, rectangular QPC, both of which together form an electronic cavity between them. The results highlight a transition between collimation-induced resistance dip to a magnetoresistance peak as the strength of coupling between the QPC and the electronic cavity…
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In this work, we performed magnetoresistance measurement in a hybrid system consisting of an arc-shaped quantum point contact (QPC) and a flat, rectangular QPC, both of which together form an electronic cavity between them. The results highlight a transition between collimation-induced resistance dip to a magnetoresistance peak as the strength of coupling between the QPC and the electronic cavity was increased. The initial results show the promise of hybrid quantum system for future quantum technologies.
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Submitted 10 September, 2018;
originally announced September 2018.
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Long-term transmission of entangled photons from single quantum dot over deployed fiber
Authors:
Zi-Heng Xiang,
Jan Huwer,
R. Mark Stevenson,
Joanna Skiba-Szymanska,
Martin B. Ward,
Ian Farrer,
David A. Ritchie,
Andrew J. Shields
Abstract:
Non-classical light sources based on a single quantum emitter are considered as core technology for multiple quantum network architectures. A large variety of sources has been developed, but the generated photons remained far from being utilized in established standard fiber networks. Here, we report a week-long transmission of polarization-entangled photons from a single InAs/GaAs quantum dot ove…
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Non-classical light sources based on a single quantum emitter are considered as core technology for multiple quantum network architectures. A large variety of sources has been developed, but the generated photons remained far from being utilized in established standard fiber networks. Here, we report a week-long transmission of polarization-entangled photons from a single InAs/GaAs quantum dot over a metropolitan network fiber. The emitted photons are in the telecommunication O-band, favored for fiber optical communication. We employ a polarization stabilization system overcoming changes of birefringence introduced by 18.23km of installed fiber. Stable transmission of polarization-encoded entanglement with a high fidelity of 91% is achieved, facilitating the operation of sub-Poissonian quantum light sources over existing fiber networks.
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Submitted 27 July, 2018;
originally announced July 2018.
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Incipient singlet-triplet states in a hybrid mesoscopic system
Authors:
Chengyu Yan,
Sanjeev Kumar,
Michael Pepper,
Patrick See,
Ian Farrer,
David Ritchie,
Jonathan Griffiths,
Geraint Jones
Abstract:
In the present work we provide an easily accessible way to achieve the singlet-triplet Kondo effect in a hybrid system consisting of a quantum point contact (QPC) coupled to an electronic cavity. We show that by activating the coupling between the QPC and cavity, a zero-bias anomaly occurs in a low conductance regime, a coexistence of zero-bias and finite-bias anomaly (FBA) in a medium conductance…
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In the present work we provide an easily accessible way to achieve the singlet-triplet Kondo effect in a hybrid system consisting of a quantum point contact (QPC) coupled to an electronic cavity. We show that by activating the coupling between the QPC and cavity, a zero-bias anomaly occurs in a low conductance regime, a coexistence of zero-bias and finite-bias anomaly (FBA) in a medium conductance regime, and a FBA-only anomaly in a high conductance regime. The latter two observations are due to the singlet-triplet Kondo effect.
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Submitted 28 June, 2018;
originally announced June 2018.
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Electrical control of the Zeeman spin splitting in two-dimensional hole systems
Authors:
Elizabeth Marcellina,
Ashwin Srinivasan,
Dmitry Miserev,
Andrew Croxall,
David Ritchie,
Ian Farrer,
Oleg Sushkov,
Dimitrie Culcer,
Alex Hamilton
Abstract:
Semiconductor holes with strong spin-orbit coupling allow all-electrical spin control, with broad applications ranging from spintronics to quantum computation. Using a two-dimensional hole system in a GaAs quantum well, we demonstrate a new mechanism of electrically controlling the Zeeman splitting, which is achieved through altering the hole wave vector $k$. We find a threefold enhancement of the…
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Semiconductor holes with strong spin-orbit coupling allow all-electrical spin control, with broad applications ranging from spintronics to quantum computation. Using a two-dimensional hole system in a GaAs quantum well, we demonstrate a new mechanism of electrically controlling the Zeeman splitting, which is achieved through altering the hole wave vector $k$. We find a threefold enhancement of the in-plane $g-$factor $g_{\parallel}(k)$. We introduce a new method for quantifying the Zeeman splitting from magnetoresistance measurements, since the conventional tilted field approach fails for two-dimensional systems with strong spin-orbit coupling. Finally, we show that the Rashba spin-orbit interaction suppresses the in-plane Zeeman interaction at low magnetic fields. The ability to control the Zeeman splitting with electric fields opens up new possibilities for future quantum spin-based devices, manipulating non-Abelian geometric phases, and realising Majorana systems in $p-$type superconductor systems.
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Submitted 28 June, 2018;
originally announced June 2018.
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Experimental verification of electrostatic boundary conditions in gate-patterned quantum devices
Authors:
H. Hou,
Y. Chung,
G. Rughoobur,
T. K. Hsiao,
A. Nasir,
A. J. Flewitt,
J. P. Griffiths,
I. Farrer,
D. A. Ritchie,
C. J. B. Ford
Abstract:
In a model of a gate-patterned quantum device it is important to choose the correct electrostatic boundary conditions (BCs) in order to match experiment. In this study, we model gated-patterned devices in doped and undoped GaAs heterostructures for a variety of BCs. The best match is obtained for an unconstrained surface between the gates, with a dielectric region above it and a frozen layer of su…
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In a model of a gate-patterned quantum device it is important to choose the correct electrostatic boundary conditions (BCs) in order to match experiment. In this study, we model gated-patterned devices in doped and undoped GaAs heterostructures for a variety of BCs. The best match is obtained for an unconstrained surface between the gates, with a dielectric region above it and a frozen layer of surface charge, together with a very deep back boundary. Experimentally, we find a 0.2V offset in pinch-off characteristics of one-dimensional channels in a doped heterostructure before and after etching off a ZnO overlayer, as predicted by the model. Also, we observe a clear quantised current driven by a surface acoustic wave through a lateral induced n-i-n junction in an undoped heterostructure. In the model, the ability to pump electrons in this type of device is highly sensitive to the back BC. Using the improved boundary conditions, it is straightforward to model quantum devices quite accurately using standard software.
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Submitted 24 June, 2018;
originally announced June 2018.
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A Josephson frequency for fractionally charged anyons
Authors:
M. Kapfer,
P. Roulleau,
M. Santin,
I. Farrer,
D. A. Ritchie,
D. C. Glattli
Abstract:
Anyons occur in two-dimensional electron systems as excitations with fractional charge in the topologically ordered states of the Fractional Quantum Hall Effect (FQHE). Their dynamics are of utmost importance for topological quantum phases and possible decoherence free quantum information approaches, but observing these dynamics experimentally is challenging. Here we report on a dynamical property…
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Anyons occur in two-dimensional electron systems as excitations with fractional charge in the topologically ordered states of the Fractional Quantum Hall Effect (FQHE). Their dynamics are of utmost importance for topological quantum phases and possible decoherence free quantum information approaches, but observing these dynamics experimentally is challenging. Here we report on a dynamical property of anyons: the long predicted Josephson relation fJ=e*V/h for charges e*=e/3 and e/5, where e is the charge of the electron and h is Planck's constant. The relation manifests itself as marked signatures in the dependence of Photo Assisted Shot Noise (PASN) on voltage V when irradiating contacts at microwaves frequency fJ. The validation of FQHE PASN models indicates a path towards realizing time-resolved anyon sources based on levitons.
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Submitted 15 March, 2019; v1 submitted 8 June, 2018;
originally announced June 2018.
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Towards a source of multi-photon entangled states for linear optical quantum computing
Authors:
J. P. Lee,
B. Villa,
A. J. Bennett,
R. M. Stevenson,
D. J. P. Ellis,
I. Farrer,
D. A. Ritchie,
A. J. Shields
Abstract:
We propose a scheme to make use of recent advances in cavity QED-enhanced resonance fluorescence from quantum dots to generate a stream of entangled and indistinguishable photons. We then demonstrate that we can optically manipulate the state of a trapped hole spin to achieve complete coherent control of a qubit. In combination with the selective cavity enhancement of the resonantly excited transi…
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We propose a scheme to make use of recent advances in cavity QED-enhanced resonance fluorescence from quantum dots to generate a stream of entangled and indistinguishable photons. We then demonstrate that we can optically manipulate the state of a trapped hole spin to achieve complete coherent control of a qubit. In combination with the selective cavity enhancement of the resonantly excited transition, we use this capability to perform a proof-of-principle demonstration of our proposal by showing that the time bin of a single photon is dependent on the measured state of the trapped spin.
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Submitted 30 April, 2018;
originally announced April 2018.
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Imaging the zigzag Wigner crystal in confinement-tunable quantum wires
Authors:
Sheng-Chin Ho,
Heng-Jian Chang,
Chia-Hua Chang,
Shun-Tsung Lo,
Graham Creeth,
Sanjeev Kumar,
Ian Farrer,
David Ritchie,
Jonathan Griffiths,
Geraint Jones,
Michael Pepper,
Tse-Ming Chen
Abstract:
The existence of Wigner crystallization, one of the most significant hallmarks of strong electron correlations, has to date only been definitively observed in two-dimensional systems. In one-dimensional (1D) quantum wires Wigner crystals correspond to regularly spaced electrons; however, weakening the confinement and allowing the electrons to relax in a second dimension is predicted to lead to the…
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The existence of Wigner crystallization, one of the most significant hallmarks of strong electron correlations, has to date only been definitively observed in two-dimensional systems. In one-dimensional (1D) quantum wires Wigner crystals correspond to regularly spaced electrons; however, weakening the confinement and allowing the electrons to relax in a second dimension is predicted to lead to the formation of a new ground state constituting a zigzag chain with nontrivial spin phases and properties. Here we report the observation of such zigzag Wigner crystals by use of on-chip charge and spin detectors employing electron focusing to image the charge density distribution and probe their spin properties. This experiment demonstrates both the structural and spin phase diagrams of the 1D Wigner crystallization. The existence of zigzag spin chains and phases which can be electrically controlled in semiconductor systems may open avenues for experimental studies of Wigner crystals and their technological applications in spintronics and quantum information.
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Submitted 23 April, 2018;
originally announced April 2018.
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Controllable photonic time-bin qubits from a quantum dot
Authors:
J. P. Lee,
L. M. Wells,
B. Villa,
S. Kalliakos,
R. M. Stevenson,
D. J. P. Ellis,
I. Farrer,
D. A. Ritchie,
A. J. Bennett,
A. J. Shields
Abstract:
Photonic time bin qubits are well suited to transmission via optical fibres and waveguide circuits. The states take the form $\frac{1}{\sqrt{2}}(α\ket{0} + e^{iφ}β\ket{1})$, with $\ket{0}$ and $\ket{1}$ referring to the early and late time bin respectively. By controlling the phase of a laser driving a spin-flip Raman transition in a single-hole-charged InAs quantum dot we demonstrate complete con…
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Photonic time bin qubits are well suited to transmission via optical fibres and waveguide circuits. The states take the form $\frac{1}{\sqrt{2}}(α\ket{0} + e^{iφ}β\ket{1})$, with $\ket{0}$ and $\ket{1}$ referring to the early and late time bin respectively. By controlling the phase of a laser driving a spin-flip Raman transition in a single-hole-charged InAs quantum dot we demonstrate complete control over the phase, $φ$. We show that this photon generation process can be performed deterministically, with only a moderate loss in coherence. Finally, we encode different qubits in different energies of the Raman scattered light, demonstrating wavelength division multiplexing at the single photon level.
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Submitted 2 April, 2018;
originally announced April 2018.