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Electrodeposited WS$_2$ Monolayers on Fabricated Graphene Electrodes
Authors:
Yasir J Noori,
Shibin Thomas,
Sami Ramadan,
Victoria K. Greenacre,
Nema M. Abdelazim,
Yisong Han,
Jiapei Zhang,
Richard Beanland,
Andrew L. Hector,
Norbert Klein,
Gillian Reid,
Philip Bartlett,
Cornelis H. de Groot
Abstract:
The development of scalable techniques to make 2D material heterostructures is a major obstacle that needs to be overcome before these materials can be implemented in device technologies industrially. Electrodeposition is an industrially compatible deposition technique that offers unique advantages in scaling 2D heterostructures. In this work, we demonstrate the electrodeposition of atomic layers…
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The development of scalable techniques to make 2D material heterostructures is a major obstacle that needs to be overcome before these materials can be implemented in device technologies industrially. Electrodeposition is an industrially compatible deposition technique that offers unique advantages in scaling 2D heterostructures. In this work, we demonstrate the electrodeposition of atomic layers of WS$_2$ over graphene electrodes using a single source precursor. Using conventional microfabrication techniques, graphene was patterned to create micro-electrodes where WS$_2$ was site-selectively deposited to form 2D heterostructures. We used various characterisation techniques, including atomic force microscopy, transmission electron microscopy, Raman spectroscopy and x-ray photoelectron spectroscopy to show that our electrodeposited WS$_2$ layers are highly uniform and can be grown over graphene at a controllable deposition rate. This technique to selectively deposit TMDCs over microfabricated graphene electrodes paves the way towards wafer-scale production of 2D material heterostructures for nanodevice applications.
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Submitted 31 August, 2021;
originally announced September 2021.
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Lateral electrodeposition of MoS2 semiconductor over an insulator
Authors:
Nema Abdelazim,
Yasir J Noori,
Shibin Thomas,
Victoria K Greenacre,
Yisong Han,
Danielle E. Smith,
Giacomo Piana,
Nikolay Zhelev,
Andrew L. Hector,
Richard Beanland,
Gillian Reid,
Philip N Bartlett,
Kees de Groot
Abstract:
Developing novel techniques for depositing transition metal dichalcogenides is crucial for the industrial adoption of 2D materials in optoelectronics. In this work, the lateral growth of molybdenum disulfide (MoS2) over an insulating surface is demonstrated using electrochemical deposition. By fabricating a new type of microelectrodes, MoS2 2D films grown from TiN electrodes across opposite sides…
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Developing novel techniques for depositing transition metal dichalcogenides is crucial for the industrial adoption of 2D materials in optoelectronics. In this work, the lateral growth of molybdenum disulfide (MoS2) over an insulating surface is demonstrated using electrochemical deposition. By fabricating a new type of microelectrodes, MoS2 2D films grown from TiN electrodes across opposite sides have been connected over an insulating substrate, hence, forming a lateral device structure through only one lithography and deposition step. Using a variety of characterization techniques, the growth rate of MoS2 has been shown to be highly anisotropic with lateral to vertical growth ratios exceeding 20-fold. Electronic and photo-response measurements on the device structures demonstrate that the electrodeposited MoS2 layers behave like semiconductors, confirming their potential for photodetection applications. This lateral growth technique paves the way towards room temperature, scalable and site-selective production of various transition metal dichalcogenides and their lateral heterostructures for 2D materials-based fabricated devices.
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Submitted 26 November, 2021; v1 submitted 1 April, 2021;
originally announced April 2021.
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Large-Area Electrodeposition of Few-Layer MoS2 on Graphene for 2D Material Heterostructures
Authors:
Yasir J. Noori,
Shibin Thomas,
Sami Ramadan,
Danielle E. Smith,
Victoria K. Greenacre,
Nema Abdelazim,
Yisong Han,
Richard Beanland,
Andrew L. Hector,
Norbert Klein,
Gill Reid,
Phillip N. Bartlett,
Cornelis H. de Groot
Abstract:
Heterostructures involving two-dimensional (2D) transition metal dichalcogenides and other materials such as graphene have a strong potential to be the fundamental building block of many electronic and opto-electronic applications. The integration and scalable fabrication of such heterostructures is of essence in unleashing the potential of these materials in new technologies. For the first time,…
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Heterostructures involving two-dimensional (2D) transition metal dichalcogenides and other materials such as graphene have a strong potential to be the fundamental building block of many electronic and opto-electronic applications. The integration and scalable fabrication of such heterostructures is of essence in unleashing the potential of these materials in new technologies. For the first time, we demonstrate the growth of few-layer MoS2 films on graphene via non-aqueous electrodeposition. Through methods such as scanning and transmission electron microscopy, atomic force microscopy, Raman spectroscopy, energy and wavelength dispersive X-ray spectroscopies and X-ray photoelectron spectroscopy, we show that this deposition method can produce large-area MoS2 films with high quality and uniformity over graphene. We reveal the potential of these heterostructures by measuring the photo-induced current through the film. These results pave the way towards developing the electrodeposition method for the large-scale growth of heterostructures consisting of varying 2D materials for many applications.
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Submitted 22 November, 2020; v1 submitted 18 May, 2020;
originally announced May 2020.
