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Nanoscale ferroelectric programming of van der Waals heterostructures
Authors:
Dengyu Yang,
Qingrui Cao,
Erin Akyuz,
John Hayden,
Josh Nordlander,
Muqing Yu,
Ranjani Ramachandran,
Patrick Irvin,
Jon-Paul Maria,
Benjamin M. Hunt,
Jeremy Levy
Abstract:
The ability to create superlattices in van der Waals (vdW) heterostructures via moiré interference heralded a new era in the science and technology of two-dimensional materials. Through precise control of the twist angle, flat bands and strongly correlated phases have been engineered. The precise twisting of vdW layers is in some sense a bottom-up approach--a single parameter can dial in a wide ra…
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The ability to create superlattices in van der Waals (vdW) heterostructures via moiré interference heralded a new era in the science and technology of two-dimensional materials. Through precise control of the twist angle, flat bands and strongly correlated phases have been engineered. The precise twisting of vdW layers is in some sense a bottom-up approach--a single parameter can dial in a wide range of periodic structures. Here, we describe a top-down approach to engineering nanoscale potentials in vdW layers using a buried programmable ferroelectric layer. Ultra-low-voltage electron beam lithography (ULV-EBL) is used to program ferroelectric domains in a ferroelectric Al_{1-x}B_{x}N thin film through a graphene/hexagonal boron nitride (hBN) heterostructure that is transferred on top. We demonstrate ferroelectric field effects by creating a lateral p-n junction, and demonstrate spatial resolution down to 35 nm, limited by the resolution of our scanned probe characterization methods. This innovative, resist-free patterning method is predicted to achieve 10 nm resolution and enable arbitrary programming of vdW layers, opening a pathway to create new phases that are inaccessible by moiré techniques. The ability to "paint" different phases of matter on a single vdW "canvas" provides a wealth of new electronic and photonic functionalities.
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Submitted 17 July, 2024;
originally announced July 2024.
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Long-Range Nanoelectromechanical Coupling at the LaAlO$_3$/SrTiO$_3$ Interface
Authors:
Aditi Nethwewala,
Kitae Eom,
Muqing Yu,
Ranjani Ramachandran,
Chang-Beom Eom,
Patrick Irvin,
Jeremy Levy
Abstract:
The LaAlO$_3$/SrTiO$_3$ interface hosts a plethora of gate-tunable electronic phases. Gating of LaAlO$_3$/SrTiO$_3$ interfaces are usually assumed to occur electrostatically. However, increasing evidence suggests that non-local interactions can influence and, in some cases, dominate the coupling between applied gate voltages and electronic properties. Here, we sketch quasi-1D ballistic electron wa…
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The LaAlO$_3$/SrTiO$_3$ interface hosts a plethora of gate-tunable electronic phases. Gating of LaAlO$_3$/SrTiO$_3$ interfaces are usually assumed to occur electrostatically. However, increasing evidence suggests that non-local interactions can influence and, in some cases, dominate the coupling between applied gate voltages and electronic properties. Here, we sketch quasi-1D ballistic electron waveguides at the LaAlO$_3$/SrTiO$_3$ interface as a probe to understand how gate tunability varies as a function of spatial separation. Gate tunability measurements reveal the scaling law to be at odds with the pure electrostatic coupling observed in traditional semiconductor systems. The non-Coulombic gating at the interface is attributed to the existence of a long-range nanoelectromechanical coupling between the gate and electron waveguide, mediated by the ferroelastic domains in SrTiO$_3$. The long-range interactions at the LaAlO$_3$/SrTiO$_3$ interface add unexpected richness and complexity to this correlated electron system.
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Submitted 31 March, 2024;
originally announced April 2024.
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Sketched Nanoscale KTaO3-Based Superconducting Quantum Interference Device
Authors:
Muqing Yu,
Nicholas Hougland,
Qianheng Du,
Junyi Yang,
Sayanwita Biswas,
Ranjani Ramachandran,
Dengyu Yang,
Anand Bhattacharya,
David Pekker,
Patrick Irvin,
Jeremy Levy
Abstract:
The discovery of two-dimensional superconductivity in LaAlO3/KTaO3 (111) and (110) interfaces has raised significant interest in this system. In this manuscript we report the first successful fabrication of a superconducting quantum interference device (DC-SQUID) in the KTO system. The key device elements, superconducting weak links, are created by conductive atomic force microscope (c-AFM) lithog…
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The discovery of two-dimensional superconductivity in LaAlO3/KTaO3 (111) and (110) interfaces has raised significant interest in this system. In this manuscript we report the first successful fabrication of a superconducting quantum interference device (DC-SQUID) in the KTO system. The key device elements, superconducting weak links, are created by conductive atomic force microscope (c-AFM) lithography which can reversibly control the conductivity at the LAO/KTO(110) interface with nanoscale resolution. The periodic modulation of the SQUID critical current, Ic(B), with magnetic field corresponds well with our theoretical modeling, which reveals a large kinetic inductance of the superconducting two-dimensional electron gas in KTO. The kinetic inductance of the SQUID is tunable by electrical gating from the back, due to the large dielectric constant of KTO. The demonstration of weak links and SQUIDs in KTO broadens the scope for exploring the underlying physics of KTO superconductivity, including the role of spin-orbit-coupling, pairing symmetry, and inhomogeneity. It also promotes KTO as a versatile platform for a growing family of quantum devices, which could be applicable in the realm of quantum computing and information.
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Submitted 5 February, 2024; v1 submitted 24 October, 2023;
originally announced October 2023.
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Breaking electron pairs in the pseudogap regime of SmTiO$_3$/SrTiO$_3$/SmTiO$_3$ quantum wells
Authors:
Xinyi Wu,
Lu Chen,
Jianan Li,
Megan Briggeman,
Patrick B. Marshall,
Susanne Stemmer,
Patrick Irvin,
Jeremy Levy
Abstract:
The strongly correlated two-dimensional electron liquid within SmTiO$_3$/SrTiO$_3$/SmTiO$_3$ quantum well structures exhibits a pseudogap phase when the quantum well width is sufficiently narrow. Using low-temperature transport and optical experiments that drive the quantum-well system out of equilibrium, we find evidence of mobile, long-lived, negatively-charged quasiparticles, consistent with th…
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The strongly correlated two-dimensional electron liquid within SmTiO$_3$/SrTiO$_3$/SmTiO$_3$ quantum well structures exhibits a pseudogap phase when the quantum well width is sufficiently narrow. Using low-temperature transport and optical experiments that drive the quantum-well system out of equilibrium, we find evidence of mobile, long-lived, negatively-charged quasiparticles, consistent with the idea that the pseudogap phase arises from strongly bound electron pairs.
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Submitted 4 May, 2023;
originally announced May 2023.
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Surface acoustic wave generation and detection in quantum paraelectric regime of SrTiO$_3$-based heterostructure
Authors:
Dengyu Yang,
Muqing Yu,
Yun-Yi Pai,
Patrick Irvin,
Hyungwoo Lee,
Kitae Eom,
Chang-Beom Eom,
Jeremy Levy
Abstract:
Strontium titanate (STO), apart from being a ubiquitous substrate for complex-oxide heterostructures, possesses a multitude of strongly-coupled electronic and mechanical properties. Surface acoustic wave (SAW) generation and detection offers insight into electromechanical couplings that are sensitive to quantum paraelectricity and other structural phase transitions. Propagating SAWs can interact w…
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Strontium titanate (STO), apart from being a ubiquitous substrate for complex-oxide heterostructures, possesses a multitude of strongly-coupled electronic and mechanical properties. Surface acoustic wave (SAW) generation and detection offers insight into electromechanical couplings that are sensitive to quantum paraelectricity and other structural phase transitions. Propagating SAWs can interact with STO-based electronic nanostructures, in particular LaAlO$_3$/SrTiO$_3$ (LAO/STO). Here we report generation and detection of SAW within LAO/STO heterointerfaces at cryogenic temperatures ($T\ge$~2 K) using superconducting interdigitated transducers (IDTs). The temperature dependence shows an increase in the SAWs quality factor that saturates at $T\approx 8 $ K. The effect of backgate tuning on the SAW resonance frequency shows the possible acoustic coupling with the ferroelastic domain wall evolution. This method of generating SAWs provides a pathway towards dynamic tuning of ferroelastic domain structures, which are expected to influence electronic properties of complex-oxide nanostructures. Devices which incorporate SAWs may in turn help to elucidate the role of ferroelastic domain structures in mediating electronic behavior.
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Submitted 12 January, 2023;
originally announced January 2023.
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Electron Pairing and Nematicity in LaAlO$_3$/SrTiO$_3$ Nanostructures
Authors:
Aditi Nethwewala,
Hyungwoo Lee,
Jianan Li,
Megan Briggeman,
Yun-Yi Pai,
Kitae Eom,
Chang-Beom Eom,
Patrick Irvin,
Jeremy Levy
Abstract:
Strongly correlated electronic systems exhibit a wealth of unconventional behavior stemming from strong electron-electron interactions. The LaAlO$_3$/SrTiO$_3$ (LAO/STO) heterostructure supports rich and varied low-temperature transport characteristics including low-density superconductivity, and electron pairing without superconductivity for which the microscopic origins is still not understood.…
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Strongly correlated electronic systems exhibit a wealth of unconventional behavior stemming from strong electron-electron interactions. The LaAlO$_3$/SrTiO$_3$ (LAO/STO) heterostructure supports rich and varied low-temperature transport characteristics including low-density superconductivity, and electron pairing without superconductivity for which the microscopic origins is still not understood. LAO/STO also exhibits inexplicable signatures of electronic nematicity via nonlinear and anomalous Hall effects. Nanoscale control over the conductivity of the LAO/STO interface enables mesoscopic experiments that can probe these effects and address their microscopic origins. Here we report a direct correlation between electron pairing without superconductivity, anomalous Hall effect and electronic nematicity in quasi-1D ballistic nanoscale LAO/STO Hall crosses. The characteristic magnetic field at which the Hall coefficient changes directly coincides with the depairing of non-superconducting pairs showing a strong correlation between the two distinct phenomena. Angle-dependent Hall measurements further reveal an onset of electronic nematicity that again coincides with the electron pairing transition, unveiling a rotational symmetry breaking due to the transition from paired to unpaired phases at the interface. The results presented here highlights the influence of preformed electron pairs on the transport properties of LAO/STO and provide evidence of the elusive pairing ''glue'' that gives rise to electron pairing in SrTiO$_3$-based systems.
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Submitted 22 December, 2022;
originally announced December 2022.
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Nanoscale control of the metal-insulator transition at LAO/KTO (110) and LAO/KTO (111) interfaces
Authors:
Muqing Yu,
Changjiang Liu,
Dengyu Yang,
Xi Yan,
Qianheng Du,
Dillon D. Fong,
Anand Bhattacharya,
Patrick Irvin,
Jeremy Levy
Abstract:
Recent reports of superconductivity at KTaO3 (KTO) (110) and (111) interfaces have sparked intense interest due to the relatively high critical temperature as well as other properties that distinguish this system from the more extensively studied SrTiO3 (STO)-based heterostructures. Here we report nanoscale control of the metal-to-insulator transition at the LaAlO3/KTO (110) and (111) interfaces.…
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Recent reports of superconductivity at KTaO3 (KTO) (110) and (111) interfaces have sparked intense interest due to the relatively high critical temperature as well as other properties that distinguish this system from the more extensively studied SrTiO3 (STO)-based heterostructures. Here we report nanoscale control of the metal-to-insulator transition at the LaAlO3/KTO (110) and (111) interfaces. Devices are created using two distinct methods previously developed for STO-based heterostructures: (1) conductive atomic-force microscopy lithography and (2) ultra-low-voltage electron-beam lithography. At low temperatures, KTO-based devices show superconductivity that is tunable by an applied back gate. A nanowire device shows single-electron-transistor (SET) behavior. These reconfigurable methods of creating nanoscale devices in KTO-based heterostructures offer new avenues for investigating mechanisms of superconductivity as well as development of quantum devices that incorporate strong spin-orbit interactions, superconducting behavior, and nanoscale dimensions.
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Submitted 7 January, 2022;
originally announced January 2022.
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Correlated Oxide Dirac Semimetal in the Extreme Quantum Limit
Authors:
Jong Mok Ok,
Narayan Mohanta,
Jie Zhang,
Sangmoon Yoon,
Satoshi Okamoto,
Eun Sang Choi,
Hua Zhou,
Megan Briggeman,
Patrick Irvin,
Andrew R. Lupini,
Yun-Yi Pai,
Elizabeth Skoropata,
Changhee Sohn,
Haoxiang Li,
Hu Miao,
Benjamin Lawrie,
Woo Seok Choi,
Gyula Eres,
Jeremy Levy,
Ho Nyung Lee
Abstract:
Quantum materials (QMs) with strong correlation and non-trivial topology are indispensable to next-generation information and computing technologies. Exploitation of topological band structure is an ideal starting point to realize correlated topological QMs. Herein, we report that strain-induced symmetry modification in correlated oxide SrNbO3 thin films creates an emerging topological band struct…
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Quantum materials (QMs) with strong correlation and non-trivial topology are indispensable to next-generation information and computing technologies. Exploitation of topological band structure is an ideal starting point to realize correlated topological QMs. Herein, we report that strain-induced symmetry modification in correlated oxide SrNbO3 thin films creates an emerging topological band structure. Dirac electrons in strained SrNbO3 films reveal ultra-high mobility (100,000 cm2/Vs), exceptionally small effective mass (0.04me), and non-zero Berry phase. More importantly, strained SrNbO3 films reach the extreme quantum limit, exhibiting a sign of fractional occupation of Landau levels and giant mass enhancement. Our results suggest that symmetry-modified SrNbO3 is a rare example of a correlated topological QM, in which strong correlation of Dirac electrons leads to the realization of fractional occupation of Landau levels.
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Submitted 18 August, 2021;
originally announced August 2021.
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Gate-Tunable Optical Extinction of Graphene Nanoribbon Nanoclusters
Authors:
Erin Sheridan,
Gang Li,
Mamun Sarker,
Shan Hao,
Ki-Tae Eom,
Chang-Beom Eom,
Alexander Sinitskii,
Patrick Irvin,
Jeremy Levy
Abstract:
We investigate the optical response of graphene nanoribbons (GNRs) using the broadband nonlinear generation and detection capabilities of nanoscale junctions created at the LaAlO$_3$/SrTiO$_3$ interface. GNR nanoclusters measured to be as small as 1-2 GNRs in size are deposited on the LaAlO$_3$ surface with an atomic force microscope tip. Time-resolved nonlinear optical probes of GNR nanoclusters…
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We investigate the optical response of graphene nanoribbons (GNRs) using the broadband nonlinear generation and detection capabilities of nanoscale junctions created at the LaAlO$_3$/SrTiO$_3$ interface. GNR nanoclusters measured to be as small as 1-2 GNRs in size are deposited on the LaAlO$_3$ surface with an atomic force microscope tip. Time-resolved nonlinear optical probes of GNR nanoclusters reveal a strong, gate-tunable second and third harmonic response, as well as strong extinction of visible to near-infrared (VIS-NIR) light at distinct wavelengths, similar to previous reports with graphene.
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Submitted 12 March, 2021;
originally announced March 2021.
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Spin-orbit-assisted electron pairing in 1D waveguides
Authors:
François Damanet,
Elliott Mansfield,
Megan Briggeman,
Patrick Irvin,
Jeremy Levy,
Andrew J. Daley
Abstract:
Understanding and controlling the transport properties of interacting fermions is a key forefront in quantum physics across a variety of experimental platforms. Motivated by recent experiments in 1D electron channels written on the $\mathrm{LaAlO_3}$/$\mathrm{SrTiO_3}$ interface, we analyse how the presence of different forms of spin-orbit coupling (SOC) can enhance electron pairing in 1D waveguid…
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Understanding and controlling the transport properties of interacting fermions is a key forefront in quantum physics across a variety of experimental platforms. Motivated by recent experiments in 1D electron channels written on the $\mathrm{LaAlO_3}$/$\mathrm{SrTiO_3}$ interface, we analyse how the presence of different forms of spin-orbit coupling (SOC) can enhance electron pairing in 1D waveguides. We first show how the intrinsic Rashba SOC felt by electrons at interfaces such as $\mathrm{LaAlO_3}$/$\mathrm{SrTiO_3}$ can be reduced when they are confined in 1D. Then, we discuss how SOC can be engineered, and show using a mean-field Hartree-Fock-Bogoliubov model that SOC can generate and enhance spin-singlet and triplet electron pairing. Our results are consistent with two recent sets of experiments [Briggeman et al., arXiv:1912.07164; Sci. Adv. 6, eaba6337 (2020)] that are believed to engineer the forms of SOC investigated in this work, which suggests that metal-oxide heterostructures constitute attractive platforms to control the collective spin of electron bound states. However, our findings could also be applied to other experimental platforms involving spinful fermions with attractive interactions, such as cold atoms.
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Submitted 21 December, 2020;
originally announced December 2020.
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Nanoscale control of LaAlO3/SrTiO3 metal-insulator transition using ultra-low-voltage electron-beam lithography
Authors:
Dengyu Yang,
Shan Hao,
Jun Chen,
Qing Guo,
Muqing Yu,
Yang Hu,
KiTae Eom,
Jung-Woo Lee,
Chang-Beom Eom,
Patrick Irvin,
Jeremy Levy
Abstract:
We describe a method to control the insulator-metal transition at the LaAlO3/SrTiO3 interface using ultra-low-voltage electron beam lithography (ULV-EBL). Compared with previous reports that utilize conductive atomic-force-microscope lithography (c-AFM), this approach can provide comparable resolution (~10 nm) at write speeds (10 mm/s) that are up to 10,000x faster than c-AFM. The writing techniqu…
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We describe a method to control the insulator-metal transition at the LaAlO3/SrTiO3 interface using ultra-low-voltage electron beam lithography (ULV-EBL). Compared with previous reports that utilize conductive atomic-force-microscope lithography (c-AFM), this approach can provide comparable resolution (~10 nm) at write speeds (10 mm/s) that are up to 10,000x faster than c-AFM. The writing technique is non-destructive and the conductive state is reversible via prolonged exposure to air. Transport properties of representative devices are measured at milli-Kelvin temperatures, where superconducting behavior is observed. We also demonstrate the ability to create conducting devices on graphene/LaAlO3/SrTiO3 heterostructures. The underlying mechanism is believed to be closely related to the same mechanism regulating c-AFM-based methods.
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Submitted 29 August, 2020;
originally announced August 2020.
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Engineered spin-orbit interactions in LaAlO$_3$/SrTiO$_3$-based 1D serpentine electron waveguides
Authors:
Megan Briggeman,
Jianan Li,
Mengchen Huang,
Hyungwoo Lee,
Jung-Woo Lee,
Kitae Eom,
Chang-Beom Eom,
Patrick Irvin,
Jeremy Levy
Abstract:
The quest to understand, design, and synthesize new forms of quantum matter guides much of contemporary research in condensed matter physics. One-dimensional (1D) electronic systems form the basis for some of the most interesting and exotic phases of quantum matter. The variety of experimentally-accessible ballistic 1D electronic systems is highly restricted, and furthermore these systems typicall…
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The quest to understand, design, and synthesize new forms of quantum matter guides much of contemporary research in condensed matter physics. One-dimensional (1D) electronic systems form the basis for some of the most interesting and exotic phases of quantum matter. The variety of experimentally-accessible ballistic 1D electronic systems is highly restricted, and furthermore these systems typically have few tuning parameters other than electric and magnetic fields. However, electron waveguides formed from two-dimensional (2D) LaAlO$_3$/SrTiO$_3$ heterointerfaces exhibit remarkable 1D properties, including ballistic multi-mode transport and strong attractive electron-electron interaction, but these systems conspicuously lack strong or tunable spin-orbit interactions. Here we describe a new class of quasi-1D nanostructures, based on LaAlO$_3$/SrTiO$_3$ electron waveguides, in which a sinusoidal transverse spatial modulation is imposed. Nanowires created with this "serpentine" modulation display unique dispersive features in the subband spectra, namely (1) a significant shift ($\sim$ 7 tesla) in the spin-dependent subband minima, and (2) fractional conductance plateaus, some of which are continuously tunable with a magnetic field. The first property can be understood as an engineered spin-orbit interaction associated with the periodic acceleration of electrons as they undulate through the nanowire (ballistically), while the second property signifies the presence of enhanced electron-electron scattering in this system due to the imposed periodic structure. The ability to engineer these interactions in quantum wires contributes to the tool set of a 1D solid-state quantum simulation platform.
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Submitted 15 December, 2019;
originally announced December 2019.
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One-dimensional Kronig-Penney superlattices at the LaAlO$_3$/SrTiO$_3$ interface
Authors:
Megan Briggeman,
Hyungwoo Lee,
Jung-Woo Lee,
Kitae Eom,
François Damanet,
Elliott Mansfield,
Jianan Li,
Mengchen Huang,
Andrew J. Daley,
Chang-Beom Eom,
Patrick Irvin,
Jeremy Levy
Abstract:
The paradigm of electrons interacting with a periodic lattice potential is central to solid-state physics. Semiconductor heterostructures and ultracold neutral atomic lattices capture many of the essential properties of 1D electronic systems. However, fully one-dimensional superlattices are highly challenging to fabricate in the solid state due to the inherently small length scales involved. Condu…
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The paradigm of electrons interacting with a periodic lattice potential is central to solid-state physics. Semiconductor heterostructures and ultracold neutral atomic lattices capture many of the essential properties of 1D electronic systems. However, fully one-dimensional superlattices are highly challenging to fabricate in the solid state due to the inherently small length scales involved. Conductive atomic-force microscope (c-AFM) lithography has recently been demonstrated to create ballistic few-mode electron waveguides with highly quantized conductance and strongly attractive electron-electron interactions. Here we show that artificial Kronig-Penney-like superlattice potentials can be imposed on such waveguides, introducing a new superlattice spacing that can be made comparable to the mean separation between electrons. The imposed superlattice potential "fractures" the electronic subbands into a manifold of new subbands with magnetically-tunable fractional conductance (in units of $e^2/h$). The lowest $G=2e^2/h$ plateau, associated with ballistic transport of spin-singlet electron pairs, is stable against de-pairing up to the highest magnetic fields explored ($|B|=16$ T). A 1D model of the system suggests that an engineered spin-orbit interaction in the superlattice contributes to the enhanced pairing observed in the devices. These findings represent an important advance in the ability to design new families of quantum materials with emergent properties, and mark a milestone in the development of a solid-state 1D quantum simulation platform.
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Submitted 15 December, 2019;
originally announced December 2019.
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Frictional drag between superconducting LaAlO$_3$/SrTiO$_3$ nanowires
Authors:
Yuhe Tang,
Jung-Woo Lee,
Anthony Tylan-Tyler,
Hyungwoo Lee,
Michelle Tomczyk,
Mengchen Huang,
Chang-Beom Eom,
Patrick Irvin,
Jeremy Levy
Abstract:
We report frictional drag measurements between two superconducting LaAlO$_3$/SrTiO$_3$ nanowires. In these experiments, current passing through one nanowire induces a voltage across a nearby electrically isolated nanowire. The frictional drag signal contains both symmetric and antisymmetric components. The antisymmetric component arises from the rectification of quantum shot noise in the drive nan…
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We report frictional drag measurements between two superconducting LaAlO$_3$/SrTiO$_3$ nanowires. In these experiments, current passing through one nanowire induces a voltage across a nearby electrically isolated nanowire. The frictional drag signal contains both symmetric and antisymmetric components. The antisymmetric component arises from the rectification of quantum shot noise in the drive nanowire by the broken symmetry in the drag nanowire. The symmetric component in the drag resistance is ascribed to rectification of thermal noise in the drive nanowire during superconducting-normal transition. The suppression of the symmetric component is observed when a normal nanowire is used as either a drag or drive nanowire with the other nanowire superconducting. The absence of symmetric drag resistance between a normal drag nanowire and a superconducting drive nanowire suggests a higher electron-hole asymmetry in the superconducting LaAlO$_3$/SrTiO$_3$ nanowire arising from the 1D nature of superconductivity at LaAlO$_3$/SrTiO$_3$ interface.
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Submitted 15 December, 2019;
originally announced December 2019.
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Gate-Tunable Optical Nonlinearities and Extinction in Graphene/LaAlO$_3$/SrTiO$_3$ Nanostructures
Authors:
Erin Sheridan,
Lu Chen,
Jianan Li,
Qing Guo,
Ki-Tae Eom,
Hyungwoo Lee,
Jung-Woo Lee,
Chang-Beom Eom,
Patrick Irvin,
Jeremy Levy
Abstract:
Pristine, undoped graphene has a constant absorption of 2.3 % across the visible to near-infrared (VIS-NIR) region of the electromagnetic spectrum. Under certain conditions, such as nanostructuring and intense gating, graphene can interact more robustly with VIS-NIR light and exhibit a large nonlinear optical response. Here, we explore the optical properties of graphene/LaAlO$_3$/SrTiO$_3$ nanostr…
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Pristine, undoped graphene has a constant absorption of 2.3 % across the visible to near-infrared (VIS-NIR) region of the electromagnetic spectrum. Under certain conditions, such as nanostructuring and intense gating, graphene can interact more robustly with VIS-NIR light and exhibit a large nonlinear optical response. Here, we explore the optical properties of graphene/LaAlO$_3$/SrTiO$_3$ nanostructures, where nanojunctions formed at the LaAlO$_3$/SrTiO$_3$ interface enable large (~10$^8$ V/m) electric fields to be applied to graphene over a scale of ~10 nm. Upon illumination with ultrafast VIS-NIR light, graphene/LaAlO$_3$/SrTiO$_3$ nanostructures produce broadband THz emission as well as a sum-frequency generated (SFG) response. Strong spectrally sharp, gate-tunable extinction features (>99.99%) are observed in both the VIS-NIR and SFG regions alongside significant intensification of the nonlinear response. The observed gate-tunable strong graphene-light interaction and nonlinear optical response are of fundamental interest and open the way for future exploitation in graphene-based optical devices.
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Submitted 14 December, 2019;
originally announced December 2019.
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Strong Aharonov-Bohm quantum interference in simply-connected LaAlO$_3$/SrTiO$_3$ structures
Authors:
Patrick Irvin,
Hyungwoo Lee,
Jung-Woo Lee,
Megan Briggeman,
Shicheng Liu,
Anil Annadi,
Guanglei Cheng,
Michelle Tomczyk,
Jinanan Li,
Mengchen Huang,
Chang-Beom Eom,
Jeremy Levy
Abstract:
We report Aharonov-Bohm (AB)-type quantum interference in simply-connected devices created at the LaAlO$_3$/SrTiO$_3$ interface using conductive-atomic force microscope (c-AFM) lithography. The oscillations are multi-periodic functions of magnetic field strength, and they exhibit a substantial magnetic hysteresis with frequencies that depends on the magnetic sweep direction. The oscillation amplit…
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We report Aharonov-Bohm (AB)-type quantum interference in simply-connected devices created at the LaAlO$_3$/SrTiO$_3$ interface using conductive-atomic force microscope (c-AFM) lithography. The oscillations are multi-periodic functions of magnetic field strength, and they exhibit a substantial magnetic hysteresis with frequencies that depends on the magnetic sweep direction. The oscillation amplitude for the lowest two frequencies approaches $e^2/h$, consistent with the theoretical maximum for the AB effect, and harmonics up to third order are observable. Broadband quasiperiodic behavior is reported in a fraction of simply-connected electron waveguide devices that exhibit magnetic asymmetries. Curiously, nanoscale ring devices that are multiply-connected lack signatures of AB quantum interference. The interference phenomena are associated with an inhomogeneous magnetic landscape within the LaAlO$_3$/SrTiO$_3$ nanostructures.
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Submitted 17 October, 2019; v1 submitted 24 September, 2019;
originally announced September 2019.
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Pascal conductance series in ballistic one-dimensional LaAlO$_3$/SrTiO$_3$ channels
Authors:
Megan Briggeman,
Michelle Tomczyk,
Binbin Tian,
Hyungwoo Lee,
Jung-Woo Lee,
Yuchi He,
Anthony Tylan-Tyler,
Mengchen Huang,
Chang-Beom Eom,
David Pekker,
Roger S. K. Mong,
Patrick Irvin,
Jeremy Levy
Abstract:
The ability to create and investigate composite fermionic phases opens new avenues for the investigation of strongly correlated quantum matter. We report the experimental observation of a series of quantized conductance steps within strongly interacting electron waveguides formed at the LaAlO$_3$/SrTiO$_3$ interface. The waveguide conductance follows a characteristic sequence within Pascal's trian…
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The ability to create and investigate composite fermionic phases opens new avenues for the investigation of strongly correlated quantum matter. We report the experimental observation of a series of quantized conductance steps within strongly interacting electron waveguides formed at the LaAlO$_3$/SrTiO$_3$ interface. The waveguide conductance follows a characteristic sequence within Pascal's triangle: $(1, 3, 6, 10, 15, ...)\cdot e^2/h$, where $e$ is the electron charge and $h$ is the Planck constant. The robustness of these steps with respect to magnetic field and gate voltage indicate the formation of a new family of degenerate quantum liquids formed from bound states of $n = 2, 3, 4, ...$ electrons. These experiments could provide solid-state analogues for a wide range of composite fermionic phases ranging from neutron stars to solid-state materials to quark-gluon plasmas.
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Submitted 12 September, 2019;
originally announced September 2019.
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Reconfigurable edge-state engineering in graphene using LaAlO$_3$/SrTiO$_3$ nanostructures
Authors:
Jianan Li,
Qing Guo,
Lu Chen,
Shan Hao,
Yang Hu,
Jen-Feng Hsu,
Hyungwoo Lee,
Jung-Woo Lee,
Chang-Beom Eom,
Brian D'Urso,
Patrick Irvin,
Jeremy Levy
Abstract:
The properties of graphene depend sensitively on doping with respect to the charge-neutrality point (CNP). Tuning the CNP usually requires electrical gating or chemical doping. Here, we describe a technique to reversibly control the CNP in graphene with nanoscale precision, utilizing LaAlO$_3$/SrTiO$_3$ (LAO/STO) heterostructures and conductive atomic force microscope (c-AFM) lithography. The loca…
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The properties of graphene depend sensitively on doping with respect to the charge-neutrality point (CNP). Tuning the CNP usually requires electrical gating or chemical doping. Here, we describe a technique to reversibly control the CNP in graphene with nanoscale precision, utilizing LaAlO$_3$/SrTiO$_3$ (LAO/STO) heterostructures and conductive atomic force microscope (c-AFM) lithography. The local electron density and resulting conductivity of the LAO/STO interface can be patterned with a conductive AFM tip, and placed within two nanometers of an active graphene device. The proximal LAO/STO nanostructures shift the position of graphene CNP by ~ $10^{12}$ cm$^{-2}$, and are also gateable. Here we use this effect to create reconfigurable edge states in graphene, which are probed using the quantum Hall effect. Quantized resistance plateaus at $h/e^2$ and $h/3e^2$ are observed in a split Hall device, demonstrating edge transport along the c-AFM written edge that depends on the polarity of both the magnetic field and direction of currents. This technique can be readily extended to other device geometries.
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Submitted 26 March, 2019; v1 submitted 5 November, 2018;
originally announced November 2018.
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Shubnikov-de Haas-like Quantum Oscillations in Artificial One-Dimensional LaAlO3/SrTiO3 Electron Channels
Authors:
Guanglei Cheng,
Anil Annadi,
Shicheng Lu,
Hyungwoo Lee,
Jung-Woo Lee,
Mengchen Huang,
Chang-Beom Eom,
Patrick Irvin,
Jeremy Levy
Abstract:
The widely reported magnetoresistance oscillations in LaAlO3/SrTiO3 heterostructures have invariably been attributed to the Shubnikov-de Haas (SdH) effect, despite a pronounced inconsistency with low-field Hall resistance measurements. Here we report SdH-like resistance oscillations in quasi-1D electron waveguides created at the LaAlO3/SrTiO3 interface by conductive atomic force microscopy lithogr…
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The widely reported magnetoresistance oscillations in LaAlO3/SrTiO3 heterostructures have invariably been attributed to the Shubnikov-de Haas (SdH) effect, despite a pronounced inconsistency with low-field Hall resistance measurements. Here we report SdH-like resistance oscillations in quasi-1D electron waveguides created at the LaAlO3/SrTiO3 interface by conductive atomic force microscopy lithography. These oscillations can be directly attributed to magnetic depopulation of magnetoelectric subbands. Our results suggest that the SdH oscillations in 2D SrTiO3-based systems may originate from naturally forming quasi-1D channels.
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Submitted 21 January, 2018;
originally announced January 2018.
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One-Dimensional Nature of Pairing and Superconductivity at the LaAlO$_3$/SrTiO$_3$ Interface
Authors:
Yun-Yi Pai,
Hyungwoo Lee,
Jung-Woo Lee,
Anil Annadi,
Guanglei Cheng,
Shicheng Lu,
Michelle Tomczyk,
Mengchen Huang,
Chang-Beom Eom,
Patrick Irvin,
Jeremy Levy
Abstract:
We examine superconductivity in LaAlO$_3$/SrTiO$_3$ channels in which the channel width transitions from the 1D to 2D regime. The superconducting critical current is independent of the channel width and increases approximately linearly with the number of parallel channels. Signatures of electron pairing outside of the superconducting phase are also independent of channel width. Collectively, these…
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We examine superconductivity in LaAlO$_3$/SrTiO$_3$ channels in which the channel width transitions from the 1D to 2D regime. The superconducting critical current is independent of the channel width and increases approximately linearly with the number of parallel channels. Signatures of electron pairing outside of the superconducting phase are also independent of channel width. Collectively, these results indicate that electron pairing and superconductivity exist at the boundary of these channels and are absent within the interior region of the channels. The intrinsic 1D nature of superconductivity at the LaAlO$_3$/SrTiO$_3$ interface imposes strong physical constraints on possible electron pairing mechanisms.
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Submitted 5 July, 2017;
originally announced July 2017.
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Long-range non-Coulombic electron-electron interactions between coupled LaAlO$_3$/SrTiO$_3$ nanowires
Authors:
Yuhe Tang,
Anthony Tylan-Tyler,
Hyungwoo Lee,
Michelle Tomczyk,
Mengchen Huang,
Chang-Beom Eom,
Patrick Irvin,
Jeremy Levy
Abstract:
The LaAlO$_3$/SrTiO$_3$ system exhibits unusual magnetic and superconducting behavior arising from electron-electron interactions whose physical origin is not well understood. Quantum transport techniques, especially those involving mesoscopic geometries, can offer insight into these interactions. Here we report evidence for long-range electron-electron interactions in LaAlO$_3$/SrTiO$_3$ nanowire…
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The LaAlO$_3$/SrTiO$_3$ system exhibits unusual magnetic and superconducting behavior arising from electron-electron interactions whose physical origin is not well understood. Quantum transport techniques, especially those involving mesoscopic geometries, can offer insight into these interactions. Here we report evidence for long-range electron-electron interactions in LaAlO$_3$/SrTiO$_3$ nanowires, measured through the phenomenon of frictional drag, in which current passing through one nanowire induces a voltage across a nearby electrically isolated nanowire. Frictional drag mediated by the Coulomb interaction is predicted to decay exponentially with interwire separation, but with the LaAlO$_3$/SrTiO$_3$ nanowire system it is found to be nearly independent of separation. Frictional drag experiments performed with three parallel wires demonstrates long-range frictional coupling even in the presence of an electrically grounded central wire. Collectively, these results provides evidence for a new long-range non-Coulombic electron-electron interaction unlike anything previously reported for semiconducting systems.
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Submitted 30 December, 2018; v1 submitted 4 July, 2017;
originally announced July 2017.
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Graphene-Complex-oxide Nanoscale Device Concepts
Authors:
Giriraj Jnawali,
Hyungwoo Lee,
Jung-Woo Lee,
Mengchen Huang,
Jen-Feng Hsu,
Bi Feng,
Rongpu Zhou,
Guanglei Cheng,
Brian DUrso,
Patrick Irvin,
Chang-Beom Eom,
Jeremy Levy
Abstract:
The integration of graphene with complex-oxide heterostructures such as LaAlO$_3$/SrTiO$_3$ offers the opportunity to combine the multifunctional properties of an oxide interface with the electronic properties of graphene. The ability to control interface conduction through graphene and understanding how it affects the intrinsic properties of an oxide interface are critical to the technological de…
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The integration of graphene with complex-oxide heterostructures such as LaAlO$_3$/SrTiO$_3$ offers the opportunity to combine the multifunctional properties of an oxide interface with the electronic properties of graphene. The ability to control interface conduction through graphene and understanding how it affects the intrinsic properties of an oxide interface are critical to the technological development of novel multifunctional devices. Here we demonstrate several device archetypes in which electron transport at an oxide interface is modulated using a patterned graphene top gate. Nanoscale devices are fabricated at the oxide interface by conductive atomic force microscope (c-AFM) lithography, and transport measurements are performed as a function of the graphene gate voltage. Experiments are performed with devices written adjacent to or directly underneath the graphene gate. Unique capabilities of this approach include the ability to create highly flexible device configurations, the ability to modulate carrier density at the oxide interface, and the ability to control electron transport up to the single-electron-tunneling regime, while maintaining intrinsic transport properties of the oxide interface. Our results facilitate the design of a variety of nanoscale devices that combine unique transport properties of these two intimately coupled two-dimensional electron systems.
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Submitted 4 April, 2018; v1 submitted 30 June, 2017;
originally announced June 2017.
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Physics of SrTiO$_3$-based heterostructures and nanostructures: a review
Authors:
Yun-Yi Pai,
Anthony Tylan-Tyler,
Patrick Irvin,
Jeremy Levy
Abstract:
This review provides a summary of the rich physics expressed within SrTiO$_3$-based heterostructures and nanostructures. The intended audience is researchers who are working in the field of oxides, but also those with different backgrounds (e.g., semiconductor nanostructures). After reviewing the relevant properties of SrTiO$_3$ itself, we will then discuss the basics of SrTiO$_3$-based heterostru…
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This review provides a summary of the rich physics expressed within SrTiO$_3$-based heterostructures and nanostructures. The intended audience is researchers who are working in the field of oxides, but also those with different backgrounds (e.g., semiconductor nanostructures). After reviewing the relevant properties of SrTiO$_3$ itself, we will then discuss the basics of SrTiO$_3$-based heterostructures, how they can be grown, and how devices are typically fabricated. Next, we will cover the physics of these heterostructures, including their phase diagram and coupling between the various degrees of freedom. Finally, we will review the rich landscape of quantum transport phenomena, as well as the devices that elicit them.
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Submitted 24 February, 2017;
originally announced February 2017.
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arXiv:1611.05127
[pdf]
cond-mat.mes-hall
cond-mat.mtrl-sci
cond-mat.str-el
cond-mat.supr-con
quant-ph
Quantized Ballistic Transport of Electrons and Electron Pairs in LaAlO$_3$/SrTiO$_3$ Nanowires
Authors:
Anil Annadi,
Guanglei Cheng,
Shicheng Lu,
Hyungwoo Lee,
Jung-Woo Lee,
Anthony Tylan-Tyler,
Megan Briggeman,
Michelle Tomczyk,
Mengchen Huang,
David Pekker,
Chang-Beom Eom,
Patrick Irvin,
Jeremy Levy
Abstract:
SrTiO$_3$-based heterointerfaces support quasi-two-dimensional (2D) electron systems that are analogous to III-V semiconductor heterostructures, but also possess superconducting, magnetic, spintronic, ferroelectric, and ferroelastic degrees of freedom. Despite these rich properties, the relatively low mobilities of 2D complex-oxide interfaces appear to preclude ballistic transport in 1D. Here we s…
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SrTiO$_3$-based heterointerfaces support quasi-two-dimensional (2D) electron systems that are analogous to III-V semiconductor heterostructures, but also possess superconducting, magnetic, spintronic, ferroelectric, and ferroelastic degrees of freedom. Despite these rich properties, the relatively low mobilities of 2D complex-oxide interfaces appear to preclude ballistic transport in 1D. Here we show that the 2D LaAlO$_3$/SrTiO$_3$ interface can support quantized ballistic transport of electrons and (non-superconducting) electron pairs within quasi-1D structures that are created using a well-established conductive atomic-force microscope (c-AFM) lithography technique. The nature of transport ranges from truly single-mode (1D) to three-dimensional (3D), depending on the applied magnetic field and gate voltage. Quantization of the lowest $e^2/h$ plateau indicate a ballistic mean-free path $l_{MF}\sim$ 20 $μ$m, more than two orders of magnitude larger than for 2D LaAlO$_3$/SrTiO$_3$ heterostructures. Non-superconducting electron pairs are found to be stable in magnetic fields as high as $B=11$ T, and propagate ballistically with conductance quantized at 2$e^2/h$. Theories of one-dimensional (1D) transport of interacting electron systems depend crucially on the sign of the electron-electron interaction, which may help explain the highly ballistic transport behavior. The 1D geometry yields new insights into the electronic structure of the LaAlO$_3$/SrTiO$_3$ system and offers a new platform for the study of strongly interacting 1D electronic systems.
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Submitted 20 June, 2018; v1 submitted 15 November, 2016;
originally announced November 2016.
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LaAlO$_3$/SrTiO$_3$: a tale of two magnetisms
Authors:
Yun-Yi Pai,
Anthony Tylan-Tyler,
Patrick Irvin,
Jeremy Levy
Abstract:
This book chapter reviews the experimental evidence for magnetic phenomena at the LaAlO3/SrTiO3 interface. We argue that essentially all of the signatures of magnetism can be sorted into two distinct categories: (1) magnetic phases (e.g., ferromagnetic or Kondo) involving local magnetic moments and their coupling to itinerant electrons; (2) metamagnetic effects that are mediated by attractive elec…
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This book chapter reviews the experimental evidence for magnetic phenomena at the LaAlO3/SrTiO3 interface. We argue that essentially all of the signatures of magnetism can be sorted into two distinct categories: (1) magnetic phases (e.g., ferromagnetic or Kondo) involving local magnetic moments and their coupling to itinerant electrons; (2) metamagnetic effects that are mediated by attractive electron-electron interactions that do not involve local moments. We review possible candidates for the local moments that give rise to the ferromagnetic phases and focus on arguments for one potential source: oxygen vacancies. For the metamagnetic transport signatures, band-structure effects (e.g., Lifshitz transition) and strong attractive electron-electron interaction can help consolidate disparate experimental findings.
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Submitted 3 October, 2016;
originally announced October 2016.
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Method for Transferring High-Mobility CVD-Grown Graphene with Perfluoropolymers
Authors:
Jianan Li,
Jen-Feng Hsu,
Hyungwoo Lee,
Shivendra Tripathi,
Qing Guo,
Lu Chen,
Mengchen Huang,
Shonali Dhingra,
Jung-Woo Lee,
Chang-Beom Eom,
Patrick Irvin,
Jeremy Levy,
Brian D'Urso
Abstract:
The transfer of graphene grown by chemical vapor deposition (CVD) using amorphous polymers represents a widely implemented method for graphene-based electronic device fabrication. However, the most commonly used polymer, poly(methyl methacrylate) (PMMA), leaves a residue on the graphene that limits the mobility. Here we report a method for graphene transfer and patterning that employs a perfluorop…
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The transfer of graphene grown by chemical vapor deposition (CVD) using amorphous polymers represents a widely implemented method for graphene-based electronic device fabrication. However, the most commonly used polymer, poly(methyl methacrylate) (PMMA), leaves a residue on the graphene that limits the mobility. Here we report a method for graphene transfer and patterning that employs a perfluoropolymer---Hyflon---as a transfer handle and to protect graphene against contamination from photoresists or other polymers. CVD-grown graphene transferred this way onto LaAlO$_3$/SrTiO$_3$ heterostructures is atomically clean, with high mobility (~30,000 cm$^2$V$^{-1}$s$^{-1}$) near the Dirac point at 2 K and clear, quantized Hall and magneto-resistance. Local control of the LaAlO$_3$/SrTiO$_3$ interfacial metal-insulator transition---through the graphene---is preserved with this transfer method. The use of perfluoropolymers such as Hyflon with CVD-grown graphene and other 2D materials can readily be implemented with other polymers or photoresists.
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Submitted 28 June, 2016;
originally announced June 2016.
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Tunable electron-electron interactions in LaAlO3/SrTiO3 nanostructures
Authors:
Guanglei Cheng,
Michelle Tomczyk,
Alexandre B. Tacla,
Hyungwoo Lee,
Shicheng Lu,
Josh P. Veazey,
Mengchen Huang,
Patrick Irvin,
Sangwoo Ryu,
Chang-Beom Eom,
Andrew Daley,
David Pekker,
Jeremy Levy
Abstract:
The interface between the two complex oxides LaAlO3 and SrTiO3 has remarkable properties that can be locally reconfigured between conducting and insulating states using a conductive atomic force microscope. Prior investigations of sketched quantum dot devices revealed a phase in which electrons form pairs, implying a strongly attractive electron-electron interaction. Here, we show that these devic…
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The interface between the two complex oxides LaAlO3 and SrTiO3 has remarkable properties that can be locally reconfigured between conducting and insulating states using a conductive atomic force microscope. Prior investigations of sketched quantum dot devices revealed a phase in which electrons form pairs, implying a strongly attractive electron-electron interaction. Here, we show that these devices with strong electron-electron interactions can exhibit a gate-tunable transition from a pair-tunneling regime to a single-electron (Andreev bound state) tunneling regime where the interactions become repulsive. The electron-electron interaction sign change is associated with a Lifshitz transition where the dxz and dyz bands start to become occupied. This electronically tunable electron-electron interaction, combined with the nanoscale reconfigurability of this system, provides an interesting starting point towards solid-state quantum simulation.
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Submitted 18 February, 2016;
originally announced February 2016.
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Room-temperature quantum transport signatures in graphene/LaAlO3/SrTiO3 heterostructures
Authors:
Giriraj Jnawali,
Mengchen Huang,
Jen-Feng Hsu,
Hyungwoo Lee,
Jung-Woo Lee,
Patrick Irvin,
Chang-Beom Eom,
Brian D'Urso,
Jeremy Levy
Abstract:
The pseudospin quantum degree of freedom is one of the most remarkable properties of graphene that distinguishes it from ordinary two-dimensional metals and semiconductors. Pseudospin quantum interference leads to weak antilocalization (WAL) and is influenced strongly by point defects and thermal perturbations that break chirality and destroy phase coherence. Preserving and manipulating quantum tr…
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The pseudospin quantum degree of freedom is one of the most remarkable properties of graphene that distinguishes it from ordinary two-dimensional metals and semiconductors. Pseudospin quantum interference leads to weak antilocalization (WAL) and is influenced strongly by point defects and thermal perturbations that break chirality and destroy phase coherence. Preserving and manipulating quantum transport properties up to room temperature is key to realizing practical pseudospin-based graphene devices. Here we report fabrication and transport characterization of graphene field-effect devices on a complex-oxide heterostructure, LaAlO3/SrTiO3. Signatures of WAL, a consequence of pseudospin quantum interference, persist up to room temperature. The LaAlO3/SrTiO3 substrate plays a critical role in suppressing short-range impurity scattering and electron-phonon coupling. The observation of quantum transport signatures at room temperature is unique to this system and presents new opportunities for the development of pseudospin-based devices and novel multifunctional devices that couple to the complex-oxide interface.
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Submitted 2 July, 2016; v1 submitted 9 February, 2016;
originally announced February 2016.
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Micrometer-scale ballistic transport of electron pairs in LaAlO3/SrTiO3 nanowires
Authors:
Michelle Tomczyk,
Guanglei Cheng,
Hyungwoo Lee,
Shicheng Lu,
Anil Annadi,
Joshua P. Veazey,
Mengchen Huang,
Patrick Irvin,
Sangwoo Ryu,
Chang-Beom Eom,
Jeremy Levy
Abstract:
High-mobility complex-oxide heterostructures and nanostructures offer new opportunities for extending the paradigm of quantum transport beyond the realm of traditional III-V or carbon-based materials. Recent quantum transport investigations with LaAlO$_3$/SrTiO$_3$-based quantum dots have revealed the existence of a strongly correlated phase in which electrons form spin-singlet pairs without becom…
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High-mobility complex-oxide heterostructures and nanostructures offer new opportunities for extending the paradigm of quantum transport beyond the realm of traditional III-V or carbon-based materials. Recent quantum transport investigations with LaAlO$_3$/SrTiO$_3$-based quantum dots have revealed the existence of a strongly correlated phase in which electrons form spin-singlet pairs without becoming superconducting. Here we report evidence for micrometer-scale ballistic transport of electron pairs in quasi-one-dimensional (quasi-1D) LaAlO$_3$/SrTiO$_3$ nanowire cavities. In the paired phase, Fabry-Perot-like quantum interference is observed, in sync with conductance oscillations observed in the superconducting regime (at zero magnetic field). Above a critical magnetic field $B_p$, electron pairs unbind and conductance oscillations shift with magnetic field. These experimental observations extend the regime of ballistic electronic transport to strongly correlated phases.
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Submitted 22 January, 2016;
originally announced January 2016.
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Nanoscale Phenomena in Oxide Heterostructures
Authors:
Joseph A. Sulpizio,
Shahal Ilani,
Patrick Irvin,
Jeremy Levy
Abstract:
Recent advances in creating complex oxide heterostructures, interfaces formed between two different transition metal oxides, have heralded a new era of materials and physics research, enabling a uniquely diverse set of coexisting physical properties to be combined with an ever- increasing degree of experimental control. Already, these systems have exhibited such varied phenomena as superconductivi…
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Recent advances in creating complex oxide heterostructures, interfaces formed between two different transition metal oxides, have heralded a new era of materials and physics research, enabling a uniquely diverse set of coexisting physical properties to be combined with an ever- increasing degree of experimental control. Already, these systems have exhibited such varied phenomena as superconductivity, magnetism, and ferroelasticity, all of which are gate-tunable, demonstrating their promise for fundamental discovery and technological innovation alike. To fully exploit this richness, it is necessary to understand and control the physics on the smallest scales, making the use of nanoscale probes essential. Using the prototypical LaAlO$_3$/SrTiO$_3$ interface as a guide, we explore the exciting developments in the physics of oxide-based heterostructures, with a focus on nanostructures and the nanoscale probes employed to unravel their complex behavior.
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Submitted 8 January, 2014;
originally announced January 2014.
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Room-Temperature Electronically-Controlled Ferromagnetism at the LaAlO3/SrTiO3 Interface
Authors:
Feng Bi,
Mengchen Huang,
Chung-Wung Bark,
Sangwoo Ryu,
Chang-Beom Eom,
Patrick Irvin,
Jeremy Levy
Abstract:
Reports of emergent conductivity, superconductivity, and magnetism at oxide interfaces have helped to fuel intense interest in their rich physics and technological potential. Here we employ magnetic force microscopy to search for room-temperature magnetism in the well-studied LaAlO3/SrTiO3 system. Using electrical top gating to deplete electrons from the oxide interface, we directly observe an in-…
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Reports of emergent conductivity, superconductivity, and magnetism at oxide interfaces have helped to fuel intense interest in their rich physics and technological potential. Here we employ magnetic force microscopy to search for room-temperature magnetism in the well-studied LaAlO3/SrTiO3 system. Using electrical top gating to deplete electrons from the oxide interface, we directly observe an in-plane ferromagnetic phase with sharply defined domain walls. Itinerant electrons, introduced by a top gate, align antiferromagnetically with the magnetization, at first screening and then destabilizing it as the conductive state is reached. Subsequent depletion of electrons results in a new, uncorrelated magnetic pattern. This newfound control over emergent magnetism at the interface between two non-magnetic oxides portends a number of important technological applications.
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Submitted 27 November, 2013; v1 submitted 21 July, 2013;
originally announced July 2013.
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Anomalous Transport in Sketched Nanostructures at the LaAlO3/SrTiO3 Interface
Authors:
Guanglei Cheng,
Joshua P. Veazey,
Patrick Irvin,
Cheng Cen1,
Daniela F. Bogorin1,
Feng Bi,
Mengchen Huang,
Shicheng Lu,
Chung-Wung Bark,
Sangwoo Ryu,
Kwang-Hwan Cho,
Chang-Beom Eom,
Jeremy Levy
Abstract:
The oxide heterostructure LaAlO3/SrTiO3 supports a two-dimensional electron liquid with a variety of competing phases including magnetism, superconductivity and weak antilocalization due to Rashba spin-orbit coupling. Further confinement of this 2D electron liquid to the quasi-one-dimensional regime can provide insight into the underlying physics of this system and reveal new behavior. Here we des…
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The oxide heterostructure LaAlO3/SrTiO3 supports a two-dimensional electron liquid with a variety of competing phases including magnetism, superconductivity and weak antilocalization due to Rashba spin-orbit coupling. Further confinement of this 2D electron liquid to the quasi-one-dimensional regime can provide insight into the underlying physics of this system and reveal new behavior. Here we describe magnetotransport experiments on narrow LaAlO3/SrTiO3 structures created by a conductive atomic force microscope lithography technique. Four-terminal local transport measurements on ~10-nm-wide Hall bar structures yield longitudinal resistances that are comparable to the resistance quantum h/e2 and independent of the channel length. Large nonlocal resistances (as large as 10^4 ohms) are observed in some but not all structures with separations between current and voltage that are large compared to the 2D mean-free path. The nonlocal transport is strongly suppressed by the onset of superconductivity below ~200 mK. The origin of these anomalous transport signatures is not understood, but may arise from coherent transport defined by strong spin-orbit coupling and/or magnetic interactions.
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Submitted 5 March, 2013;
originally announced March 2013.
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Electro-Mechanical Response of Top-Gated LaAlO3/SrTiO3 Heterostructures
Authors:
Feng Bi,
Mengchen Huang,
Chung Wung Bark,
Sangwoo Ryu,
Sanghan Lee,
Chang-Beom Eom,
Patrick Irvin,
Jeremy Levy
Abstract:
LaAlO3/SrTiO3 heterostructures are known to exhibit a sharp, hysteretic metal-insulator transition (MIT) with large enhanced capacitance near depletion. To understand the physical origin of this behavior, the electromechanical response of top-gated LaAlO3/SrTiO3 heterostructures is probed using two simultaneous measurement techniques: piezoforce microscopy (PFM) and capacitance spectroscopy. PFM m…
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LaAlO3/SrTiO3 heterostructures are known to exhibit a sharp, hysteretic metal-insulator transition (MIT) with large enhanced capacitance near depletion. To understand the physical origin of this behavior, the electromechanical response of top-gated LaAlO3/SrTiO3 heterostructures is probed using two simultaneous measurement techniques: piezoforce microscopy (PFM) and capacitance spectroscopy. PFM measurements reveal local variations in the hysteretic response, which is directly correlated with capacitance measurements. The enhanced capacitance at the MIT is linked to charging/discharging dynamics of nanoscale conducting islands, which are revealed through PFM imaging and time-resolved capacitance and piezoresponse measurements.
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Submitted 15 May, 2013; v1 submitted 1 February, 2013;
originally announced February 2013.
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Superconducting LaAlO3/SrTiO3 Nanowires
Authors:
Joshua P. Veazey,
Guanglei Cheng,
Patrick Irvin,
Cheng Cen,
Daniela F. Bogorin,
Feng Bi,
Mengchen Huang,
Chung-Wung Bark,
Sangwoo Ryu,
Kwang-Hwan Cho,
Chang-Beom Eom,
Jeremy Levy
Abstract:
We report superconductivity in quasi-1D nanostructures created at the LaAlO3/SrTiO3 interface. Nanostructures having line widths w~10 nm are formed from the parent two-dimensional electron liquid using conductive atomic force microscope lithography. Nanowire cross-sections are small compared to the superconducting coherence length in LaAlO3/SrTiO3 (w<<xi~100 nm), placing them in the quasi-1D regim…
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We report superconductivity in quasi-1D nanostructures created at the LaAlO3/SrTiO3 interface. Nanostructures having line widths w~10 nm are formed from the parent two-dimensional electron liquid using conductive atomic force microscope lithography. Nanowire cross-sections are small compared to the superconducting coherence length in LaAlO3/SrTiO3 (w<<xi~100 nm), placing them in the quasi-1D regime. Broad superconducting transitions with temperature and finite resistances in the superconducting state well below Tc~200 mK are observed. V-I curves show switching between the superconducting and normal states that are characteristic of superconducting nanowires. The four-terminal resistance in the superconducting state shows an unusual dependence on the current path, varying by as much as an order of magnitude.
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Submitted 12 October, 2012;
originally announced October 2012.
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LaAlO3/SrTiO3-Based Device Concepts
Authors:
Daniela F. Bogorin,
Patrick Irvin,
Cheng Cen,
Jeremy Levy
Abstract:
This is a book chapter that covers several device concepts based on the LaAlO3/SrTiO3 interface.
This is a book chapter that covers several device concepts based on the LaAlO3/SrTiO3 interface.
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Submitted 23 November, 2010;
originally announced November 2010.
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Rewritable nanoscale oxide photodetector
Authors:
Patrick Irvin,
Yanjun Ma,
Daniela F. Bogorin,
Cheng Cen,
Chung Wung Bark,
Chad M. Folkman,
Chang-Beom Eom,
Jeremy Levy
Abstract:
Nanophotonic devices seek to generate, guide, and/or detect light using structures whose nanoscale dimensions are closely tied to their functionality. Semiconducting nanowires, grown with tailored optoelectronic properties, have been successfully placed into devices for a variety of applications. However, the integration of photonic nanostructures with electronic circuitry has always been one of t…
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Nanophotonic devices seek to generate, guide, and/or detect light using structures whose nanoscale dimensions are closely tied to their functionality. Semiconducting nanowires, grown with tailored optoelectronic properties, have been successfully placed into devices for a variety of applications. However, the integration of photonic nanostructures with electronic circuitry has always been one of the most challenging aspects of device development. Here we report the development of rewritable nanoscale photodetectors created at the interface between LaAlO3 and SrTiO3. Nanowire junctions with characteristic dimensions 2-3 nm are created using a reversible AFM writing technique. These nanoscale devices exhibit a remarkably high gain for their size, in part because of the large electric fields produced in the gap region. The photoconductive response is gate-tunable and spans the visible-to-near-infrared regime. The ability to integrate rewritable nanoscale photodetectors with nanowires and transistors in a single materials platform foreshadows new families of integrated optoelectronic devices and applications.
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Submitted 14 September, 2010;
originally announced September 2010.
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Localized microwave resonances in strained SrTiO3 thin films
Authors:
Patrick Irvin,
J. H. Haeni,
Darrell G. Schlom,
Jeremy Levy
Abstract:
The frequency-dependent polar dynamics of strained SrTiO3 films grown on DyScO3 are investigated using time-resolved confocal scanning optical microscopy. Microwave frequency electric fields are synchronized with a mode-locked laser and applied in-plane to the sample, while the temporal response is probed optically. Local spectroscopic information is obtained with <1 um spatial resolution over the…
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The frequency-dependent polar dynamics of strained SrTiO3 films grown on DyScO3 are investigated using time-resolved confocal scanning optical microscopy. Microwave frequency electric fields are synchronized with a mode-locked laser and applied in-plane to the sample, while the temporal response is probed optically. Local spectroscopic information is obtained with <1 um spatial resolution over the frequency range 2-4 GHz. Investigation of the SrTiO3/DyScO3 system reveals resonances that are localized both in space and in frequency.
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Submitted 15 September, 2010; v1 submitted 27 December, 2004;
originally announced December 2004.
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Three-dimensional polarization imaging of (Ba,Sr)TiO3:MgO composites
Authors:
Patrick Irvin,
Ruyan Guo,
Amar Bhalla,
Jeremy Levy
Abstract:
The dielectric tuning and loss of (Ba,Sr)TiO3:MgO bulk composites depend strongly on the connectivity and interaction among the two phases. To investigate this relationship, the polar structure and dynamics of these composites is mapped as a function of space and time using a pair of three-dimensional probes: second-harmonic confocal scanning optical microscopy (SH-CSOM), which maps ferroelectric…
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The dielectric tuning and loss of (Ba,Sr)TiO3:MgO bulk composites depend strongly on the connectivity and interaction among the two phases. To investigate this relationship, the polar structure and dynamics of these composites is mapped as a function of space and time using a pair of three-dimensional probes: second-harmonic confocal scanning optical microscopy (SH-CSOM), which maps ferroelectric polarization in three dimensions, and time-resolved scanning optical microscopy (TR-CSOM), which maps polarization dynamics along two spatial dimensions and one time dimension. SH-CSOM measurements reveal a high degree of homogeneity within the (Ba,Sr)TiO3 regions, while TR-CSOM measurements indicate that topologically connected regions respond with a spatially uniform phase.
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Submitted 13 August, 2012; v1 submitted 28 September, 2004;
originally announced September 2004.