-
Efficient fabrication of high-density ensembles of color centers via ion implantation on a hot diamond substrate
Authors:
E. Nieto Hernandez,
G. Andrini,
A. Crnjac,
M. Brajkovic,
F. Picariello,
E. Corte,
V. Pugliese,
M. Matijević,
P. Aprà,
V. Varzi,
J. Forneris,
M. Genovese,
Z. Siketic,
M. Jaksic,
S. Ditalia Tchernij
Abstract:
Nitrogen-Vacancy (NV) centers in diamond are promising systems for quantum technologies, including quantum metrology and sensing. A promising strategy for the achievement of high sensitivity to external fields relies on the exploitation of large ensembles of NV centers, whose fabrication by ion implantation is upper limited by the amount of radiation damage introduced in the diamond lattice. In th…
▽ More
Nitrogen-Vacancy (NV) centers in diamond are promising systems for quantum technologies, including quantum metrology and sensing. A promising strategy for the achievement of high sensitivity to external fields relies on the exploitation of large ensembles of NV centers, whose fabrication by ion implantation is upper limited by the amount of radiation damage introduced in the diamond lattice. In this works we demonstrate an approach to increase the density of NV centers upon the high-fluence implantation of MeV N2+ ions on a hot target substrate (>550 °C). Our results show that, with respect to room-temperature implantation, the high-temperature process increases the vacancy density threshold required for the irreversible conversion of diamond to a graphitic phase, thus enabling to achieve higher density ensembles. Furthermore, the formation efficiency of color centers was investigated on diamond substrates implanted at varying temperatures with MeV N2+ and Mg+ ions revealing that the formation efficiency of both NV centers and magnesium-vacancy (MgV) centers increases with the implantation temperature.
△ Less
Submitted 30 October, 2023;
originally announced October 2023.
-
4H-SiC Schottky diode radiation hardness assessment by IBIC microscopy
Authors:
Ettore Vittone,
Paolo Olivero,
Milko Jaksic,
Zeljko Pastuovic
Abstract:
We report findings on the Ion Beam Induced Charge (IBIC) characterization of a 4H-SiC Schottky barrier diode (SBD), in terms of the modification of the Charge Collection Efficiency (CCE) distribution induced by 20 MeV C ions irradiations with fluences ranging from 20 to 200 ions/um2. The lateral IBIC microscopy with 4 MeV protons over the SBD cross section, carried out on the pristine diode eviden…
▽ More
We report findings on the Ion Beam Induced Charge (IBIC) characterization of a 4H-SiC Schottky barrier diode (SBD), in terms of the modification of the Charge Collection Efficiency (CCE) distribution induced by 20 MeV C ions irradiations with fluences ranging from 20 to 200 ions/um2. The lateral IBIC microscopy with 4 MeV protons over the SBD cross section, carried out on the pristine diode evidenced the widening of the depletion layer extension as function of the applied bias and allowed the measurement of the minority carrier diffusion lengths. After the irradiation with C ions, lateral IBIC showed a significant modification of the CCE distribution, with a progressive shrinkage of the depletion layer as the fluence of the damaging C ions increases. A simple electrostatic model ruled out that the shrinkage is due to the implanted charge and ascribed the perturbation of the electrostatic landscape to radiation-induced defects with positive charge state.
△ Less
Submitted 10 November, 2022;
originally announced November 2022.
-
Polychromatic angle resolved IBIC analysis of silicon power diodes
Authors:
M. Pezzarossa,
E. Cepparrone,
D. Cosic,
M. Jakšić,
G. Provatas,
M. Vićentijević,
E. Vittone
Abstract:
This paper describes both an experimental methodology based on the Ion Beam Induced Charge (IBIC) technique and the relevant interpretative model, which were adopted to characterize the electronic features of power diodes. IBIC spectra were acquired using different proton energies (from 1.2 to 2.0 MeV), angles of incidence, and applied bias voltages. The modulation of the ion probe range, combined…
▽ More
This paper describes both an experimental methodology based on the Ion Beam Induced Charge (IBIC) technique and the relevant interpretative model, which were adopted to characterize the electronic features of power diodes. IBIC spectra were acquired using different proton energies (from 1.2 to 2.0 MeV), angles of incidence, and applied bias voltages. The modulation of the ion probe range, combined with the modulation of the extensions of the depletion layer, allowed the charge collection efficiency scale to be accurately calibrated, the dead layer beneath the thick (6 micrometer) Al electrode and the minority carrier lifetime to be measured. The analysis was performed by using a simplified model extracted from the basic IBIC theory, which proved to be suitable to interpret the behaviour of the IBIC spectra as a function of all the experimental conditions and to characterize the devices, both for what concerns the electrostatics and the recombination processes.
△ Less
Submitted 17 December, 2020; v1 submitted 27 September, 2020;
originally announced September 2020.
-
Mechanisms of surface nanostructuring of Al2O3 and MgO by grazing incidence irradiation with swift heavy ions
Authors:
Marko Karlusic,
Ruslan A. Rymzhanov,
Jacques H. O'Connell,
Lara Brockers,
Kristina Tomic Luketic,
Zdravko Siketic,
Stjepko Fazinic,
Pavo Dubcek,
Milko Jaksic,
Georgios Provatas,
Nikita Medvedev,
Alexander E. Volkov,
Marika Schleberger
Abstract:
We experimentally discovered that Al2O3 and MgO exhibit well-pronounced nanometric modifications on the surfaces when irradiated under grazing incidence with 23 MeV I beam, in contrast to normal incidence irradiation with the same ion beam when no damage was found. Moreover, ions in these two materials produce notably different structures: grooves surrounded with nanohillocks on MgO surfaces vs. s…
▽ More
We experimentally discovered that Al2O3 and MgO exhibit well-pronounced nanometric modifications on the surfaces when irradiated under grazing incidence with 23 MeV I beam, in contrast to normal incidence irradiation with the same ion beam when no damage was found. Moreover, ions in these two materials produce notably different structures: grooves surrounded with nanohillocks on MgO surfaces vs. smoother, roll-like discontinuous structures on the surfaces of Al2O3. To explain these results, detailed numerical simulations were performed. We identified that a presence of the surface inhibits recrystallization process, thereby preventing transient tracks from recovery, and thus forming observable nanopatterns. Furthermore, a difference in the viscosities in molten states in Al2O3 vs. MgO explains the differences in the created nanostructures. Our results thus provide a deeper understanding of the fundamental processes of surface nanostructuring, potentially allowing for controlled production of periodic surface nanopatterns.
△ Less
Submitted 10 March, 2020;
originally announced March 2020.
-
In-air ion beam analysis with high spatial resolution proton microbeam
Authors:
Milko Jakšić,
Davit Chokheli,
Stjepko Fazinić,
Veljko Grilj,
Natko Skukan,
Ivan Sudić,
Tonči Tadić,
Tome Antičić
Abstract:
One of the possible ways to maintain the micrometer spatial resolution while performing ion beam analysis in the air is to increase the energy of ions. In order to explore capabilities and limitations of this approach, we have tested a range of proton beam energies (2 - 6 MeV) using in-air STIM (Scanning Ion Transmission Microscopy) setup. Measurements of the spatial resolution dependence on proto…
▽ More
One of the possible ways to maintain the micrometer spatial resolution while performing ion beam analysis in the air is to increase the energy of ions. In order to explore capabilities and limitations of this approach, we have tested a range of proton beam energies (2 - 6 MeV) using in-air STIM (Scanning Ion Transmission Microscopy) setup. Measurements of the spatial resolution dependence on proton energy have been compared with SRIM simulation and modelling of proton multiple scattering by different approaches. Results were used to select experimental conditions in which 1 micrometer spatial resolution could be obtained. High resolution in-air microbeam could be applied for IBIC (Ion Beam Induced Charge) tests of large detectors used in nuclear and high energy physics that otherwise can not be tested in relatively small microbeam vacuum chambers.
△ Less
Submitted 10 March, 2019;
originally announced March 2019.
-
Photoluminescence of lead-related optical centers in single-crystal diamond
Authors:
S. Ditalia Tchernij,
T. Lühmann,
J. Forneris,
T. Herzig,
J. Küpper,
A. Damin,
S. Santonocito,
P. Traina,
E. Moreva,
F. Celegato,
S. Pezzagna,
I. P. Degiovanni,
M. Jakšić,
M. Genovese,
J. Meijer,
P. Olivero
Abstract:
We report on the creation and characterization of Pb-related color centers in diamond upon ion implantation and subse- quent thermal annealing. Their optical emission in photoluminescence (PL) regime consists of an articulated spectrum with intense emission peaks at 552.1 nm and 556.8 nm, accompanied by a set of additional lines in the 535700 nm range. The attribution of the PL emission to stable…
▽ More
We report on the creation and characterization of Pb-related color centers in diamond upon ion implantation and subse- quent thermal annealing. Their optical emission in photoluminescence (PL) regime consists of an articulated spectrum with intense emission peaks at 552.1 nm and 556.8 nm, accompanied by a set of additional lines in the 535700 nm range. The attribution of the PL emission to stable Pb-based defects is corroborated by the correlation of its intensity with the implantation fluence of Pb ions, while none of the reported features is observed in reference samples implanted with C ions. Furthermore, PL measurements performed as a function of sample temperature (143-300 K range) and un- der different excitation wavelengths (532 nm, 514 nm, 405 nm) suggest that the complex spectral features observed in Pb-implanted diamond might be related to a variety of different defects and/or charge states. This work follows from previous reports on optically active centers in diamond based on group IV impurities, such as Si, Ge and Pb. In perspective, a comprehensive study of this set of defect complexes could bring significant insight on the common features involved in their formation and opto-physical properties, thus offering a solid basis for the devel- opment of a new generation of quantum-optical devices.
△ Less
Submitted 5 June, 2018;
originally announced June 2018.
-
Single-photon-emitting optical centers in diamond fabricated upon Sn implantation
Authors:
S. Ditalia Tchernij,
T. Herzig,
J. Forneris,
J. Küpper,
S. Pezzagna,
P. Traina,
E. Moreva,
I. P. Degiovanni,
G. Brida,
N. Skukan,
M. Genovese,
M. Jakšić,
J. Meijer,
P. Olivero
Abstract:
The fabrication of luminescent defects in single-crystal diamond upon Sn implantation and annealing is reported. The relevant spectral features of the optical centers (emission peaks at 593.5 nm, 620.3 nm, 630.7 nm and 646.7 nm) are attributed to Sn-related defects through the correlation of their photoluminescence (PL) intensity with the implantation fluence. Single Sn-related defects were identi…
▽ More
The fabrication of luminescent defects in single-crystal diamond upon Sn implantation and annealing is reported. The relevant spectral features of the optical centers (emission peaks at 593.5 nm, 620.3 nm, 630.7 nm and 646.7 nm) are attributed to Sn-related defects through the correlation of their photoluminescence (PL) intensity with the implantation fluence. Single Sn-related defects were identified and characterized through the acquisition of their second-order auto-correlation emission functions, by means of Hanbury-Brown-Twiss interferometry. The investigation of their single-photon emission regime as a function of excitation laser power revealed that Sn-related defects are based on three-level systems with a 6 ns radiative decay lifetime. In a fraction of the studied centers, the observation of a blinking PL emission is indicative of the existence of a dark state. Furthermore, absorption dependence from the polarization of the excitation radiation with about 45 percent contrast was measured. This work shed light on the existence of a new optical center associated with a group-IV impurity in diamond, with similar photo-physical properties to the already well-known Si-V and Ge-V emitters, thus providing results of interest from both the fundamental and applicative points of view.
△ Less
Submitted 26 September, 2017; v1 submitted 4 August, 2017;
originally announced August 2017.
-
Mapping the local spatial charge in defective diamond by means of NV sensors - A "self-diagnostic" concept
Authors:
J. Forneris,
S. Ditalia Tchernij,
P. Traina,
E. Moreva,
N. Skukan,
M. Jakšić,
V. Grilj,
L. Croin,
G. Amato,
I. P. Degiovanni,
B. Naydenov,
F. Jelezko,
M. Genovese,
P. Olivero
Abstract:
Electrically-active defects have a significant impact on the performance of electronic devices based on wide band-gap materials such as diamond. This issue is ubiquitous in diamond science and technology, since the presence of charge traps in the active regions of different classes of diamond-based devices (detectors, power diodes, transistors) can significantly affect their performances, due to t…
▽ More
Electrically-active defects have a significant impact on the performance of electronic devices based on wide band-gap materials such as diamond. This issue is ubiquitous in diamond science and technology, since the presence of charge traps in the active regions of different classes of diamond-based devices (detectors, power diodes, transistors) can significantly affect their performances, due to the formation of space charge, memory effects and the degradation of the electronic response associated with radiation damage. Among the most common defects in diamond, the nitrogen-vacancy (NV) center possesses unique spin properties which enable high-sensitivity field sensing at the nanoscale. Here we demonstrate that NV ensembles can be successfully exploited to perform a direct local mapping of the internal electric field distribution of a graphite-diamond-graphite junction exhibiting electrical properties dominated by trap- and space-charge-related conduction mechanisms. By performing optically-detected magnetic resonance measurements, we performed both punctual readout and spatial mapping of the electric field in the active region at different bias voltages. In this novel "self-diagnostic" approach, defect complexes represent not only the source of detrimental space charge effects, but also a unique tool to directly investigate them, by providing experimental evidences on the conduction mechanisms that in previous studies could only be indirectly inferred on the basis of conventional electrical and optical characterization.
△ Less
Submitted 24 June, 2017;
originally announced June 2017.
-
Monitoring ion track formation using in situ RBS/c and ERDA
Authors:
Marko Karlusic,
Stjepko Fazinic,
Zdravko Siketic,
Tonci Tadic,
Domagoj Cosic,
Milko Jaksic,
Marika Schleberger
Abstract:
The aim of this work is to investigate feasibility of the ion beam analysis techniques for monitoring swift heavy ion track formation. First, use of the in situ Rutherford backscattering spectroscopy in channeling mode to observe damage build-up in quartz SiO2 after MeV heavy ion irradiation is demonstrated. Second, new results of the in situ grazing incidence time-of-flight elastic recoil detecti…
▽ More
The aim of this work is to investigate feasibility of the ion beam analysis techniques for monitoring swift heavy ion track formation. First, use of the in situ Rutherford backscattering spectroscopy in channeling mode to observe damage build-up in quartz SiO2 after MeV heavy ion irradiation is demonstrated. Second, new results of the in situ grazing incidence time-of-flight elastic recoil detection analysis used for monitoring the surface elemental composition during ion tracks formation in various materials are presented. Ion tracks were found on SrTiO3, quartz SiO2, a-SiO2 and muscovite mica surfaces by atomic force microscopy, but in contrast to our previous studies on GaN and TiO2, surface stoichiometry remained unchanged.
△ Less
Submitted 11 April, 2017;
originally announced April 2017.
-
Formation of buried conductive micro-channels in single crystal diamond with MeV C and He implantation
Authors:
F. Picollo,
P. Olivero,
F. Bellotti,
Ž. Pastuović,
N. Skukan,
A. Lo Giudice,
G. Amato,
M. Jakšić,
E. Vittone
Abstract:
As demonstrated in previous works, implantation with a MeV ion microbeam through masks with graded thickness allows the formation of conductive micro-channels in diamond which are embedded in the insulating matrix at controllable depths [P. Olivero et al., Diamond Relat. Mater. 18 (5-8), 870-876 (2009)]. In the present work we report about the systematic electrical characterization of such micro-c…
▽ More
As demonstrated in previous works, implantation with a MeV ion microbeam through masks with graded thickness allows the formation of conductive micro-channels in diamond which are embedded in the insulating matrix at controllable depths [P. Olivero et al., Diamond Relat. Mater. 18 (5-8), 870-876 (2009)]. In the present work we report about the systematic electrical characterization of such micro-channels as a function of several implantation conditions, namely: ion species and energy, implantation fluence. The current-voltage (IV) characteristics of the buried channels were measured at room temperature with a two point probe station. Significant parameters such as the sheet resistance and the characteristic exponent (alpha) of the IV power-law trend were expressed as a function of damage density, with satisfactory compatibility between the results obtained in different implantation conditions.
△ Less
Submitted 9 September, 2016;
originally announced September 2016.
-
Semiconductor characterization by scanning ion beam induced charge (IBIC) microscopy
Authors:
E. Vittone,
Z. Pastuovic,
P. Olivero,
C. Manfredotti,
M. Jaksic,
A. Lo Giudice,
F. Fizzotti,
E. Colombo
Abstract:
The acronym IBIC (Ion Beam Induced Charge) was coined in early 1990's to indicate a scanning microscopy technique which uses MeV ion beams as probes to image the basic electronic properties of semiconductor materials and devices. Since then, IBIC has become a widespread analytical technique to characterize materials for electronics or for radiation detection, as testified by more than 200 papers p…
▽ More
The acronym IBIC (Ion Beam Induced Charge) was coined in early 1990's to indicate a scanning microscopy technique which uses MeV ion beams as probes to image the basic electronic properties of semiconductor materials and devices. Since then, IBIC has become a widespread analytical technique to characterize materials for electronics or for radiation detection, as testified by more than 200 papers published so far in peer-reviewed journals. Its success stems from the valuable information IBIC can provide on charge transport phenomena occurring in finished devices, not easily obtainable by other analytical techniques. However, IBIC analysis requires a robust theoretical background to correctly interpret experimental data. In order to illustrate the importance of using a rigorous mathematical formalism, we present in this paper a benchmark IBIC experiment aimed to test the validity of the interpretative model based on the Gunn's theorem and to provide an example of the analytical capability of IBIC to characterize semiconductor devices.
△ Less
Submitted 1 September, 2016;
originally announced September 2016.
-
Charge collection efficiency mapping of interdigitated 4H-SiC detectors
Authors:
E. Vittone,
N. Skukan,
Z. Pastuovic,
P. Olivero,
M. Jaksic
Abstract:
The Ion Beam Induced Charge Collection (IBIC) technique was used to map the charge collection efficiency (CCE) of a 4H-SiC photodetector with coplanar interdigitated Schottky barrier electrodes and a common ohmic contact on the back side. IBIC maps were obtained using focused proton beams with energies of 0.9 MeV and 1.5 MeV, at different bias voltages and different sensitive electrode configurati…
▽ More
The Ion Beam Induced Charge Collection (IBIC) technique was used to map the charge collection efficiency (CCE) of a 4H-SiC photodetector with coplanar interdigitated Schottky barrier electrodes and a common ohmic contact on the back side. IBIC maps were obtained using focused proton beams with energies of 0.9 MeV and 1.5 MeV, at different bias voltages and different sensitive electrode configurations (charge collection at the top Schottky or at the back Ohmic contact). These different experimental conditions have been modeled using a two dimensional finite element code to solve the adjoint carrier continuity equations and the results obtained have been compared with experimental results. The excellent consistency between the simulated and experimental CCE maps allows an exhaustive interpretation of the charge collection mechanisms occurring in pixellated or strip detectors.
△ Less
Submitted 26 August, 2016;
originally announced August 2016.
-
Finite element analysis of ion-implanted diamond surface swelling
Authors:
F. Bosia,
P. Olivero,
E. Vittone,
F. Picollo,
A. Lo Giudice,
M. Jaksic,
N. Skukan,
L. Giuntini,
M. Massi,
S. Calusi,
M. Vannoni,
S. Lagomarsino,
S. Sciortino
Abstract:
We present experimental results and numerical Finite Element analysis to describe surface swelling due to the creation of buried graphite-like inclusions in diamond substrates subjected to MeV ion implantation. Numerical predictions are compared to experimental data for MeV proton and helium implantations, performed with scanning ion microbeams. Swelling values are measured with white light interf…
▽ More
We present experimental results and numerical Finite Element analysis to describe surface swelling due to the creation of buried graphite-like inclusions in diamond substrates subjected to MeV ion implantation. Numerical predictions are compared to experimental data for MeV proton and helium implantations, performed with scanning ion microbeams. Swelling values are measured with white light interferometric profilometry in both cases. Simulations are based on a model which accounts for the through-the-thickness variation of mechanical parameters in the material, as a function of ion type, fluence and energy. Surface deformation profiles and internal stress distributions are analyzed and numerical results are seen to adequately fit experimental data. Results allow us to draw conclusions on structural damage mechanisms in diamond for different MeV ion implantations.
△ Less
Submitted 29 August, 2016;
originally announced August 2016.
-
Monte Carlo analysis of a lateral IBIC experiment on a 4H-SiC Schottky diode
Authors:
P. Olivero,
J. Forneris,
P. Gamarra,
M. Jaksic,
A. Lo Giudice,
C. Manfredotti,
Z. Pastuovic,
N. Skukan,
E. Vittone
Abstract:
The transport properties of a 4H-SiC Schottky diode have been investigated by the Ion Beam Induced Charge (IBIC) technique in lateral geometry through the analysis of the charge collection efficiency (CCE) profile at a fixed applied reverse bias voltage. The cross section of the sample orthogonal to the electrodes was irradiated by a rarefied 4 MeV proton microbeam and the charge pulses have been…
▽ More
The transport properties of a 4H-SiC Schottky diode have been investigated by the Ion Beam Induced Charge (IBIC) technique in lateral geometry through the analysis of the charge collection efficiency (CCE) profile at a fixed applied reverse bias voltage. The cross section of the sample orthogonal to the electrodes was irradiated by a rarefied 4 MeV proton microbeam and the charge pulses have been recorded as function of incident proton position with a spatial resolution of 2 um. The CCE profile shows a broad plateau with CCE values close to 100% occurring at the depletion layer, whereas in the neutral region, the exponentially decreasing profile indicates the dominant role played by the diffusion transport mechanism. Mapping of charge pulses was accomplished by a novel computational approach, which consists in mapping the Gunn's weighting potential by solving the electrostatic problem by finite element method and hence evaluating the induced charge at the sensing electrode by a Monte Carlo method. The combination of these two computational methods enabled an exhaustive interpretation of the experimental profiles and allowed an accurate evaluation both of the electrical characteristics of the active region (e.g. electric field profiles) and of basic transport parameters (i. e. diffusion length and minority carrier lifetime).
△ Less
Submitted 29 August, 2016;
originally announced August 2016.
-
Focused ion beam fabrication and IBIC characterization of a diamond detector with buried electrodes
Authors:
P. Olivero,
J. Forneris,
M. Jaksic,
Z. Pastuovic,
F. Picollo,
N. Skukan,
E. Vittone
Abstract:
This paper reports on the fabrication and characterization of a high purity monocrystalline diamond detector with buried electrodes realized by the selective damage induced by a focused 6 MeV carbon ion beam scanned over a pattern defined at the micrometric scale. A suitable variable-thickness mask was deposited on the diamond surface in order to modulate the penetration depth of the ions and to s…
▽ More
This paper reports on the fabrication and characterization of a high purity monocrystalline diamond detector with buried electrodes realized by the selective damage induced by a focused 6 MeV carbon ion beam scanned over a pattern defined at the micrometric scale. A suitable variable-thickness mask was deposited on the diamond surface in order to modulate the penetration depth of the ions and to shallow the damage profile toward the surface. After the irradiation, the sample was annealed at high temperature in order to promote the conversion to the graphitic phase of the end-of-range regions which experienced an ion-induced damage exceeding the damage threshold, while recovering the sub-threshold damaged regions to the highly resistive diamond phase. This process provided conductive graphitic electrodes embedded in the insulating diamond matrix; the presence of the variable-thickness mask made the terminations of the channels emerging at the diamond surface and available to be connected to an external electronic circuit. In order to evaluate the quality of this novel microfabrication procedure based on direct ion writing, we performed frontal Ion Beam Induced Charge (IBIC) measurements by raster scanning focused MeV ion beams onto the diamond surface. Charge collection efficiency (CCE) maps were measured at different bias voltages. The interpretation of such maps was based on the Shockley-Ramo-Gunn formalism.
△ Less
Submitted 25 August, 2016;
originally announced August 2016.
-
IBIC characterization of an ion-beam-micromachined multi-electrode diamond detector
Authors:
J. Forneris,
V. Grilj,
M. Jaksic,
A. Lo Giudice,
P. Olivero,
F. Picollo,
N. Skukan,
C. Verona,
G. Verona-Rinati,
E. Vittone
Abstract:
Deep Ion Beam Lithography (DIBL) has been used for the direct writing of buried graphitic regions in monocrystalline diamond with micrometric resolution. Aiming at the development and the characterization of a fully ion-beam-micromachined solid state ionization chamber, a device with interdigitated electrodes was fabricated by using a 1.8 MeV He+ ion microbeam scanning on a homoepitaxial, grown by…
▽ More
Deep Ion Beam Lithography (DIBL) has been used for the direct writing of buried graphitic regions in monocrystalline diamond with micrometric resolution. Aiming at the development and the characterization of a fully ion-beam-micromachined solid state ionization chamber, a device with interdigitated electrodes was fabricated by using a 1.8 MeV He+ ion microbeam scanning on a homoepitaxial, grown by chemical vapour deposition (CVD). In order to evaluate the ionizing-radiation-detection performance of the device, charge collection efficiency (CCE) maps were extracted from Ion Beam Induced Charge (IBIC) measurements carried out by probing different arrangements of buried microelectrodes. The analysis of the CCE maps allowed for an exhaustive evaluation of the detector features, in particular the individuation of the different role played by electrons and holes in the formation of the induced charge pulses. Finally, a comparison of the performances of the detector with buried graphitic electrodes with those relevant to conventional metallic surface electrodes evidenced the formation of a dead layer overlying the buried electrodes as a result of the fabrication process.
△ Less
Submitted 25 August, 2016;
originally announced August 2016.
-
Direct fabrication of three-dimensional buried conductive channels in single crystal diamond with ion microbeam induced graphitization
Authors:
P. Olivero,
G. Amato,
F. Bellotti,
O. Budnyk,
E. Colombo,
M. Jaksic,
A. Lo Giudice,
C. Manfredotti,
Z. Pastuovic,
F. Picollo,
N. Skukan,
M. Vannoni,
E. Vittone
Abstract:
We report on a novel method for the fabrication of three-dimensional buried graphitic micropaths in single crystal diamond with the employment of focused MeV ions. The use of implantation masks with graded thickness at the sub-micrometer scale allows the formation of conductive channels which are embedded in the insulating matrix at controllable depths. In particular, the modulation of the channel…
▽ More
We report on a novel method for the fabrication of three-dimensional buried graphitic micropaths in single crystal diamond with the employment of focused MeV ions. The use of implantation masks with graded thickness at the sub-micrometer scale allows the formation of conductive channels which are embedded in the insulating matrix at controllable depths. In particular, the modulation of the channels depth at their endpoints allows the surface contacting of the channel terminations with no need of further fabrication stages. In the present work we describe the sample masking, which includes the deposition of semi spherical gold contacts on the sample surface, followed by MeV ion implantation. Because of the significant difference between the densities of pristine and amorphous or graphitized diamond, the formation of buried channels has a relevant mechanical effect on the diamond structure, causing localized surface swelling, which has been measured both with interferometric profilometry and atomic force microscopy. The electrical properties of the buried channels are then measured with a two point probe station: clear evidence is given that only the terminal points of the channels are electrically connected with the surface, while the rest of the channels extends below the surface. IV measurements are employed also to qualitatively investigate the electrical properties of the channels as a function of implantation fluence and annealing.
△ Less
Submitted 26 August, 2016;
originally announced August 2016.
-
Electrical control of deep NV centers in diamond by means of sub-superficial graphitic micro-electrodes
Authors:
J. Forneris,
S. Ditalia Tchernij,
A. Tengattini,
E. Enrico,
V. Grilj,
N. Skukan,
G. Amato,
L. Boarino,
M. Jakšić,
P. Olivero
Abstract:
The control of the charge state of nitrogen-vacancy (NV) centers in diamond is of primary importance for the stabilization of their quantum-optical properties, in applications ranging from quantum sensing to quantum computing. To this purpose, in this work current-injecting micro-electrodes were fabricated in bulk diamond for NV charge state control. Buried (i.e. 3 μm in depth) graphitic micro-ele…
▽ More
The control of the charge state of nitrogen-vacancy (NV) centers in diamond is of primary importance for the stabilization of their quantum-optical properties, in applications ranging from quantum sensing to quantum computing. To this purpose, in this work current-injecting micro-electrodes were fabricated in bulk diamond for NV charge state control. Buried (i.e. 3 μm in depth) graphitic micro-electrodes with spacing of 9 μm were created in single-crystal diamond substrates by means of a 6 MeV C scanning micro-beam. The high breakdown field of diamond was exploited to electrically control the variation in the relative population of the negative (NV-) and neutral (NV0) charge states of sub-superficial NV centers located in the inter- electrode gap regions, without incurring into current discharges. Photoluminescence spectra acquired from the biased electrodes exhibited an electrically induced increase up to 40% in the NV- population at the expense of the NV0 charge state. The variation in the relative charge state populations showed a linear dependence from the injected current at applied biases smaller than 250 V, and was interpreted as the result of electron trapping at NV sites, consistently with the Space Charge Limited Current interpretation of the abrupt current increase observed at 300 V bias voltage. In correspondence of such trap-filling-induced transition to a high-current regime, a strong electroluminescent emission from the NV0 centers was observed. In the high-current-injection regime, a decrease in the NV- population was observed, in contrast with the results obtained at lower bias voltages. These results disclose new possibilities in the electrical control of the charge state of NV centers located in the diamond bulk, which are characterized by longer spin coherence times.
△ Less
Submitted 19 July, 2016;
originally announced July 2016.
-
On the threshold of ion track formation in CaF2
Authors:
Marko Karlusic,
Corneliu Ghica,
Raluca Florentina Negrea,
Zdravko Siketic,
Milko Jaksic,
Marika Schleberger,
Stjepko Fazinic
Abstract:
There is ongoing debate regarding the mechanism of swift heavy ion track formation in CaF2. The objective of this study is to shed light on this important topic using a range of complimentary experimental techniques. Evidence of the threshold for ion track formation being below 3 keV/nm is provided by both transmission electron microscopy and Rutherford backscattering spectroscopy in the channelin…
▽ More
There is ongoing debate regarding the mechanism of swift heavy ion track formation in CaF2. The objective of this study is to shed light on this important topic using a range of complimentary experimental techniques. Evidence of the threshold for ion track formation being below 3 keV/nm is provided by both transmission electron microscopy and Rutherford backscattering spectroscopy in the channeling mode which has direct consequences for the validity of models describing the response of CaF2 to swift heavy ion irradiation. Advances in the TEM and RBS/c analyses presented here pave the way for better understanding of the ion track formation.
△ Less
Submitted 13 June, 2016;
originally announced June 2016.
-
Creation and characterization of He-related color centers in diamond
Authors:
Jacopo Forneris,
Andrea Tengattini,
Sviatoslav Ditalia Tchernij,
Federico Picollo,
Alfio Battiato,
Paolo Traina,
Ivo Degiovanni,
Ekaterina Moreva,
Giorgio Brida,
Veljko Grilj,
Natko Skukan,
Milko Jakšić,
Marco Genovese,
Paolo Olivero
Abstract:
Diamond is a promising material for the development of emerging applications in quantum optics, quantum information and quantum sensing. The fabrication and characterization of novel luminescent defects with suitable opto-physical properties is therefore of primary importance for further advances in these research fields. In this work we report on the investigation in the formation of photolumines…
▽ More
Diamond is a promising material for the development of emerging applications in quantum optics, quantum information and quantum sensing. The fabrication and characterization of novel luminescent defects with suitable opto-physical properties is therefore of primary importance for further advances in these research fields. In this work we report on the investigation in the formation of photoluminescent (PL) defects upon MeV He implantation in diamond. Such color centers, previously reported only in electroluminescence and cathodoluminescence regime, exhibited two sharp emission lines at 536.5 nm and 560.5 nm, without significant phonon sidebands. A strong correlation between the PL intensities of the above-mentioned emission lines and the He implantation fluence was found in the 10^15-10^17 cm^{-2} fluence range. The PL emission features were not detected in control samples, i.e. samples that were either unirradiated or irradiated with different ion species (H, C). Moreover, the PL emission lines disappeared in samples that were He-implanted above the graphitization threshold. Therefore, the PL features are attributed to optically active defects in the diamond matrix associated with He impurities. The intensity of the 536.5 nm and 560.5 nm emission lines was investigated as a function of the annealing temperature of the diamond substrate. The emission was observed upon annealing at temperatures higher than 500°C, at the expenses of the concurrently decreasing neutral-vacancy-related GR1 emission intensity. Therefore, our findings indicate that the luminescence originates from the formation of a stable lattice defect. Finally, the emission was investigated under different laser excitations wavelengths (i.e. 532 nm and 405 nm) with the purpose of gaining a preliminary insight about the position of the related levels in the energy gap of diamond.
△ Less
Submitted 4 June, 2016;
originally announced June 2016.
-
Nanostructuring Graphene by Dense Electronic Excitation
Authors:
O. Ochedowski,
O. Lehtinen,
U. Kaiser,
A. Turchanin,
B. Ban-d'Etat,
H. Lebius,
M. Karlusic,
M. Jaksic,
M. Schleberger
Abstract:
The ability to manufacture tailored graphene nanostructures is a key factor to fully exploit its enormous technological potential. We have investigated nanostructures created in graphene by swift heavy ion induced folding. For our experiments, single layers of graphene exfoliated on various substrates and freestanding graphene have been irradiated and analyzed by atomic force and high resolution t…
▽ More
The ability to manufacture tailored graphene nanostructures is a key factor to fully exploit its enormous technological potential. We have investigated nanostructures created in graphene by swift heavy ion induced folding. For our experiments, single layers of graphene exfoliated on various substrates and freestanding graphene have been irradiated and analyzed by atomic force and high resolution transmission electron microscopy as well as Raman spectroscopy. We show that the dense electronic excitation in the wake of the traversing ion yields characteristic nanostructures each of which may be fabricated by choosing the proper irradiation conditions. These nanostructures include unique morphologies such as closed bilayer edges with a given chirality or nanopores within supported as well as freestanding graphene. The length and orientation of the nanopore, and thus of the associated closed bilayer edge, may be simply controlled by the direction of the incoming ion beam. In freestanding graphene, swift heavy ion irradiation induces extremely small openings, offering the possibility to perforate graphene membranes in a controlled way.
△ Less
Submitted 10 September, 2015;
originally announced September 2015.
-
Electroluminescence from nitrogen-vacancy and interstitial-related centers in bulk diamond stimulated by ion-beam-fabricated sub-superficial graphitic micro-electrodes
Authors:
J. Forneris,
S. Ditalia Tchernij,
A. Battiato,
F. Picollo,
A. Tengattini,
V. Grilj,
N. Skukan,
G. Amato,
L. Boarino,
I. P. Degiovanni,
E. Enrico,
P. Traina,
M. Jakšić,
M. Genovese,
P. Olivero
Abstract:
We report on the fabrication and characterization of a single-crystal diamond device for the electrical stimula- tion of light emission from nitrogen-vacancy (NV0) and other defect-related centers. Pairs of sub-superficial graphitic micro-electrodes embedded in insulating diamond were fabricated by a 6 MeV C3+ micro-beam irra- diation followed by thermal annealing. A photoluminescence (PL) charact…
▽ More
We report on the fabrication and characterization of a single-crystal diamond device for the electrical stimula- tion of light emission from nitrogen-vacancy (NV0) and other defect-related centers. Pairs of sub-superficial graphitic micro-electrodes embedded in insulating diamond were fabricated by a 6 MeV C3+ micro-beam irra- diation followed by thermal annealing. A photoluminescence (PL) characterization evidenced a low radiation damage concentration in the inter-electrode gap region, which did not significantly affect the PL features domi- nated by NV centers. The operation of the device in electroluminescence (EL) regime was investigated by ap- plying a bias voltage at the graphitic electrodes, resulting in the injection of a high excitation current above a threshold voltage (~300V), which effectively stimulated an intense EL emission from NV0 centers. In addition, we report on the new observation of two additional sharp EL emission lines (at 563 nm and 580 nm) related to interstitial defects formed during MeV ion beam fabrication.
△ Less
Submitted 8 July, 2015;
originally announced July 2015.
-
Electrical stimulation of single-photon emission from nitrogen-vacancy centers in diamond with sub-superficial graphitic electrodes
Authors:
J. Forneris,
D. Gatto Monticone,
P. Traina,
V. Grilj,
G. Brida,
G. Amato,
L. Boarino,
E. Enrico,
I. P. Degiovanni,
E. Moreva,
N. Skukan,
M. Jakšić,
M. Genovese,
P. Olivero
Abstract:
Focused MeV ion beams with micrometric resolution are suitable tools for the direct writing of conductive graphitic channels buried in an insulating diamond bulk. Their effectiveness has been shown for the fabrication of multi-electrode ionizing radiation detectors and cellular biosensors. In this work we investigate such fabrication method for the electrical excitation of color centers in diamond…
▽ More
Focused MeV ion beams with micrometric resolution are suitable tools for the direct writing of conductive graphitic channels buried in an insulating diamond bulk. Their effectiveness has been shown for the fabrication of multi-electrode ionizing radiation detectors and cellular biosensors. In this work we investigate such fabrication method for the electrical excitation of color centers in diamond. Differently from optically-stimulated light emission from color centers in diamond, electroluminescence (EL) requires a high current flowing in the diamond subgap states between the electrodes. With this purpose, buried graphitic electrode pairs with a spacing of 10 $μ$m were fabricated in the bulk of a single-crystal diamond sample using a 6 MeV C microbeam. The electrical characterization of the structure showed a significant current above an effective voltage threshold of 150V, which was interpreted according to the theory of Space Charge Limited Current. The EL imaging allowed to identify the electroluminescent regions and the residual vacancy distribution associated with the fabrication technique. Measurements evidenced bright electroluminescent emission from native neutrally-charged nitrogen-vacancy centers ($NV^0$); the acquired spectra highlighted the absence of EL associated with radiation damage.
△ Less
Submitted 12 September, 2014; v1 submitted 1 August, 2014;
originally announced August 2014.
-
Measurement and modelling of anomalous polarity pulses in a multi-electrode diamond detector
Authors:
J. Forneris,
V. Grilj,
M. Jaksic,
P. Olivero,
F. Picollo,
N. Skukan,
C. Verona,
G. Verona-Rinati,
E. Vittone
Abstract:
In multi-electrode detectors, the motion of excess carriers generated by ionizing radiation induces charge pulses at the electrodes, whose intensities and polarities depend on the geometrical, electrostatic and carriers transport properties of the device. The resulting charge sharing effects may lead to bipolar currents, pulse height defects and anomalous polarity signals affecting the response of…
▽ More
In multi-electrode detectors, the motion of excess carriers generated by ionizing radiation induces charge pulses at the electrodes, whose intensities and polarities depend on the geometrical, electrostatic and carriers transport properties of the device. The resulting charge sharing effects may lead to bipolar currents, pulse height defects and anomalous polarity signals affecting the response of the device to ionizing radiation. This latter effect has recently attracted attention in commonly used detector materials, but different interpretations have been suggested, depending on the material, the geometry of the device and the nature of the ionizing radiation. In this letter, we report on the investigation in the formation of anomalous polarity pulses in a multi-electrode diamond detector with buried graphitic electrodes. In particular, we propose a purely electrostatic model based on the Shockley-Ramo-Gunn theory, providing a satisfactory description of anomalous pulses observed in charge collection efficiency maps measured by means of Ion Beam Induced Charge (IBIC) microscopy, and suitable for a general application in multi-electrode devices and detectors.
△ Less
Submitted 17 December, 2013;
originally announced December 2013.
-
Energy threshold for nanodot creation by swift heavy ions
Authors:
Marko Karlusic,
Sevilay Akcoeltekin,
Orkhan Osmani,
Isabelle Monnet,
Henning Lebius,
Milko Jaksic,
Marika Schleberger
Abstract:
We present theoretical and experimental data on the threshold behaviour of nanodot creation with swift heavy ions. A model calculation based on a two-temperature model taking the spatially resolved electron density into account gives a threshold of 12 keV/nm below which the energy density at the end of the track is no longer high enough to melt the material. In the corresponding experiments we i…
▽ More
We present theoretical and experimental data on the threshold behaviour of nanodot creation with swift heavy ions. A model calculation based on a two-temperature model taking the spatially resolved electron density into account gives a threshold of 12 keV/nm below which the energy density at the end of the track is no longer high enough to melt the material. In the corresponding experiments we irradiated SrTiO$_3$ surfaces under grazing incidence with swift heavy ions. The resulting chains of nanodots were analyzed by atomic force microscopy. In addition, samples irradiated under normal incidence were analyzed by transmission electron microscopy. Both experiments show two thresholds, connected to the appearance of tracks and to the creation of fully developed tracks, respectively. The threshold values are similar for surface and bulk tracks, suggesting that the same processes occur at glancing and normal incidence. The experimental threshold for the formation of fully developed tracks compares well to the value obtained by the theoretical description.
△ Less
Submitted 5 November, 2009;
originally announced November 2009.
