Showing 1–7 of 7 results for author: Kashid, V

Effect of Exchange Interaction and Spin-Orbit Coupling on Spin Splitting in CdSnX (X = S, Se and Te) nanoribbons

Authors: Sutapa Chattopadhyay, Vikas Kashid, P. Durganandini, Anjali Kshirsagar

Abstract: We have studied the topological properties of free standing Sn doped cadmium chalcogenide (CdSnX, X = S, Se and Te) nanoribbons of varying widths and three types of edges viz., distorted armchair, normal armchair and normal zigzag edges. The unsatisfied bonds of X and Sn atoms at the edges cause non-zero values of the magnetic moment. This introduces an exchange field leading to inverted band stru… ▽ More We have studied the topological properties of free standing Sn doped cadmium chalcogenide (CdSnX, X = S, Se and Te) nanoribbons of varying widths and three types of edges viz., distorted armchair, normal armchair and normal zigzag edges. The unsatisfied bonds of X and Sn atoms at the edges cause non-zero values of the magnetic moment. This introduces an exchange field leading to inverted band structure. The electronic band structures of distorted armchair edge nanoribbons also exhibit different types of spin splitting property for different X atoms due to the different local orbital angular momentum at specific X atomic site with the inclusion of spin orbit coupling (SOC). The gap opening at the band crossings near the Fermi level after inclusion of SOC are mainly due to SOC of Sn atom and are responsible for the electron and hole pockets making the system topologically exotic. All the distorted edge nanoribbons show metallic behaviour with non-zero magnetic moments. Amongst CdX (X = S, Se and Te) nanoribbons, systems containing S atoms exhibit Weyl-like semi-metallic behavior and not much change with width, that of Se atoms exhibit Zeeman-type spin splitting and significant change with varying width, whereas systems containing Te atoms show signature of Rashba spin splitting along with Zeeman-type spin splitting and moderate change with varying width. The armchair edge nanoribbons show wide gap semiconducting behaviour. Zeeman-type spin splitting is seen in the valence band region for systems containing S atoms and Rashba spin splitting is visible in the conduction band region for systems containing Se and Te atoms. For zigzag edge nanoribbons, no such signature of spin splitting is observed although all the nanoribbons acquire very high magnetic moments. △ Less

Submitted 29 December, 2023; originally announced December 2023.

Comments: Additional information Supplemetary.pdf

Enhanced Atomic Precision Fabrication by Adsorption of Phosphine into Engineered Dangling Bonds on H-Si Using STM and DFT

Authors: Jonathan Wyrick, Xiqiao Wang, Pradeep Namboodiri, Ranjit V. Kashid, Fan Fei, Joseph Fox, Richard M. Silver

Abstract: Doping of Si using the scanning probe hydrogen depassivation lithography technique has been shown to enable placing and positioning small numbers of P atoms with nanometer accuracy. Several groups have now used this capability to build devices that exhibit desired quantum behavior determined by their atomistic details. What remains elusive, however, is the ability to control the precise number of… ▽ More Doping of Si using the scanning probe hydrogen depassivation lithography technique has been shown to enable placing and positioning small numbers of P atoms with nanometer accuracy. Several groups have now used this capability to build devices that exhibit desired quantum behavior determined by their atomistic details. What remains elusive, however, is the ability to control the precise number of atoms placed at a chosen site with 100% yield, thereby limiting the complexity and degree of perfection achievable. As an important step towards precise control of dopant number, we explore the adsorption of the P precursor molecule, phosphine, into atomically perfect dangling bond patches of intentionally varied size consisting of 3 adjacent Si dimers along a dimer row, 2 adjacent dimers, and 1 single dimer. Using low temperature scanning tunneling microscopy, we identify the adsorption products by generating and comparing to a catalog of simulated images, explore atomic manipulation after adsorption in select cases, and follow up with incorporation of P into the substrate. For 1-dimer patches we demonstrate that manipulation of the adsorbed species leads to single P incorporation in 12 out of 12 attempts. Based on the observations made in this study, we propose this 1-dimer patch method as a robust approach that can be used to fabricate devices where it is ensured that each site of interest has exactly one P atom. △ Less

Submitted 18 October, 2022; v1 submitted 22 December, 2021; originally announced December 2021.

First-principles study of the electronic and magnetic properties of cubic GdCu compound

Authors: Vikas Kashid, Ersoy Şaşıoğlu, Gustav Bihlmayer, Alexander B. Shick, Stefan Blügel

Abstract: The structural, electronic, and magnetic properties of bulk GdCu (CsCl-type) are investigated using spin density functional theory, where highly localized $4f$ orbitals are treated within LDA+$U$ and GGA+$U$ methods. The calculated magnetic ground state of GdCu using collinear as well as spin spiral calculations exhibits a C-type antiferromagnetic configuration representing a spin spiral propagati… ▽ More The structural, electronic, and magnetic properties of bulk GdCu (CsCl-type) are investigated using spin density functional theory, where highly localized $4f$ orbitals are treated within LDA+$U$ and GGA+$U$ methods. The calculated magnetic ground state of GdCu using collinear as well as spin spiral calculations exhibits a C-type antiferromagnetic configuration representing a spin spiral propagation vector $\mathbf{Q}=\frac{2π}{a}(\frac{1}{2},\frac{1}{2},0)$. The parameters of the effective Heisenberg Hamiltonian are evaluated from a self-consistent electronic structure and are used to determine the magnetic transition temperature. The estimated Néel temperature of the cubic GdCu using GGA+$U$ and LDA+$U$ density functionals within the mean field and random phase approximations are in good agreement with the experimentally measured values. In particular, the theoretical understanding of the experimentally observed core Gd $4f$ levels shifting in photoemission spectroscopy experiments is investigated in detail. By employing the self-consistent constrained random-phase approximation we determined the strength of the effective Coulomb interaction (Hubbard $U$) between localized $4f$ electrons. We find that, the shift of Gd-$4f$ states in GdCu with respect to bulk Gd within DFT+$U$ is sensitive to choice of lattice parameter. The calculations for $4f$-level shifts using DFT+$U$ methods as well as Hubbard-1 approximation are not consistent with the experimental findings. △ Less

Submitted 28 May, 2020; originally announced May 2020.

Comments: 12 Pages, 8 figures

Atomic-scale Control of Tunnel Coupling

Authors: Xiqiao Wang, Jonathan Wyrick, Ranjit V. Kashid, Pradeep Namboodiri, Scott W. Schmucker, Andrew Murphy, M. D. Stewart, Jr., Neil Zimmerman, Richard M. Silver

Abstract: Atomically precise donor-based quantum devices are a promising candidate for scalable solid-state quantum computing. Atomically precise design and implementation of the tunnel coupling in these devices is essential to realize gate-tunable exchange coupling, and electron spin initialization and readout. Current efforts in atomically precise lithography have enabled deterministic placement of single… ▽ More Atomically precise donor-based quantum devices are a promising candidate for scalable solid-state quantum computing. Atomically precise design and implementation of the tunnel coupling in these devices is essential to realize gate-tunable exchange coupling, and electron spin initialization and readout. Current efforts in atomically precise lithography have enabled deterministic placement of single dopant atoms into the Si lattice with sub-nm precision. However, critical challenges in atomically precise fabrication have meant systematic, atomic-scale control of the tunneling coupling has not been demonstrated. Here using a room-temperature grown locking layer and precise control over the entire atomic-scale fabrication process, we demonstrate atomic-scale control of the tunnel coupling in atomically precise single-electron transistors (SETs). Using the naturally occurring Si (100) 2x1 surface reconstruction lattice as an atomically-precise ruler, we systematically vary the number of lattice counts within the tunnel junction gaps and demonstrate exponential scaling of the tunneling resistance at the atomic limit. Using low-temperature transport measurements, we characterize the tunnel coupling asymmetry in a pair of nominally identical tunnel gaps that results from atomic-scale variation in the tunnel junction and show a resistance difference of four that corresponds to half a dimer row pitch difference in the effective tunnel gap distances - the intrinsic limit of hydrogen lithography precision on Si (100) 2x1 surfaces. Our results demonstrate the key capability to do atom-scale design and engineering of the tunnel coupling necessary for solid-state quantum computing and analog quantum simulation. △ Less

Submitted 26 July, 2019; v1 submitted 30 April, 2019; originally announced May 2019.

Magnetic properties of 2D nickel nanostrips: structure dependent magnetic anomaly

Authors: Vikas Kashid, Vaishali Shah, H. G. Salunke, Yuriy Mokrousov, Stefan Blügel

Abstract: We have investigated different geometries of two dimensional (2D) infinite length Ni nanowires of increasing width using spin density functional theory calculations. Our simulations demonstrate that the parallelogram motif is the most stable and structures that incorporate the parallelogram motif are more stable as compared to rectangular structures. The wires are conducting and the conductance ch… ▽ More We have investigated different geometries of two dimensional (2D) infinite length Ni nanowires of increasing width using spin density functional theory calculations. Our simulations demonstrate that the parallelogram motif is the most stable and structures that incorporate the parallelogram motif are more stable as compared to rectangular structures. The wires are conducting and the conductance channels increase with increasing width. The wires have a non-linear behavior in the ballistic anistropic magnetoresistance ratios with respect to the magnetization directions. All 2D nanowires as well as Ni (111) and Ni (100) monolayer investigated are ferromagnetic under the Stoner criterion and exhibit enhanced magnetic moments as compared to bulk Ni and the respective Ni monolayers. The Stoner parameter is seen to depend on the structure and the dimension of the Nws. The easy axis for all nickel nanowires under investigation is observed to be along the wire axis. The double rectangular nanowire exhibits a magnetic anomaly with a smaller magnetic moment when compared to Ni (100) monolayer and is the only structure with an easy axis perpendicular to the wire axis. △ Less

Submitted 11 February, 2015; originally announced February 2015.

Comments: 13 Pages

Dzyaloshinskii-Moriya interaction and chiral magnetism in 3$d$-5$d$ zig-zag chains: Tight-binding model and ab initio calculations

Authors: Vikas Kashid, Timo Schena, Bernd Zimmermann, Yuriy Mokrousov, Stefan Blügel, Vaishali Shah, H. G. Salunke

Abstract: We investigate the chiral magnetic order in free-standing planar 3$d$-5$d$ bi-atomic metallic chains (3$d$: Fe, Co; 5$d$: Ir, Pt, Au) using first-principles calculations based on density functional theory. We found that the antisymmetric exchange interaction, commonly known as Dzyaloshinskii-Moriya interaction (DMI), contributes significantly to the energetics of the magnetic structure. We used th… ▽ More We investigate the chiral magnetic order in free-standing planar 3$d$-5$d$ bi-atomic metallic chains (3$d$: Fe, Co; 5$d$: Ir, Pt, Au) using first-principles calculations based on density functional theory. We found that the antisymmetric exchange interaction, commonly known as Dzyaloshinskii-Moriya interaction (DMI), contributes significantly to the energetics of the magnetic structure. We used the full-potential linearized augmented plane wave method and performed self-consistent calculations of homogeneous spin spirals, calculating the DMI by treating the effect of spin-orbit interaction (SOI) in the basis of the spin-spiral states in first-order perturbation theory. To gain insight into the DMI results of our ab initio calculations, we develop a minimal tight-binding model of three atoms and 4 orbitals that contains all essential features: the spin-canting between the magnetic $3d$ atoms, the spin-orbit interaction at the $5d$ atoms, and the structure inversion asymmetry facilitated by the triangular geometry. We found that spin-canting can lead to spin-orbit active eigenstates that split in energy due to the spin-orbit interaction at the $5d$ atom. We show that, the sign and strength of the hybridization, the bonding or antibonding character between $d$-orbitals of the magnetic and non-magnetic sites, the bandwidth and the energy difference between states occupied and unoccupied states of different spin projection determine the sign and strength of the DMI. The key features observed in the trimer model are also found in the first-principles results. △ Less

Submitted 2 June, 2014; originally announced June 2014.

Comments: 19 pages

Electronic structure effects in stability and quantum conductance in 2D gold nanowires

Authors: Vikas Kashid, Vaishali Shah, H. G. Salunke

Abstract: We have investigated the stability and conductivity of unsupported, two dimensional infinite gold nanowires using ab-initio density functional theory (DFT). Two dimensional ribbon like nanowires, with 1-5 rows of gold atoms in the non-periodic direction and with different possible structures have been considered. The nanowires with > 2 rows of atoms exhibit dimerization, similar to finite wires, a… ▽ More We have investigated the stability and conductivity of unsupported, two dimensional infinite gold nanowires using ab-initio density functional theory (DFT). Two dimensional ribbon like nanowires, with 1-5 rows of gold atoms in the non-periodic direction and with different possible structures have been considered. The nanowires with > 2 rows of atoms exhibit dimerization, similar to finite wires, along the non-periodic direction. Our results show that in these zero thickness nanowires, the parallelogram motif is the most stable. A comparison between parallelogram and rectangular shaped nanowires of increasing width indicates that zero thickness (111) oriented wires have a higher stability over (100). A detailed analysis of the electronic structure, reveals that the (111) oriented structures show increased delocalization of s and p electrons in addition to a stronger delocalization of the d electrons and hence are the most stable. The density of states show that the nanowires are metallic and conducting except for the double zigzag structure, which, is semiconducting. Conductance calculations show transmission for a wide range of energies in all the stable nanowires with more than two rows of atoms. The conductance channels are not purely s and have strong contributions from the d levels and weak contributions from the p levels. △ Less

Submitted 28 March, 2011; originally announced March 2011.

Comments: 29 pages