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Acoustic and Optical Phonon Frequencies and Acoustic Phonon Velocities in Silicon-Doped Aluminum Nitride Thin Films
Authors:
Dylan Wright,
Dinusha Herath Mudiyanselage,
Erick Guzman,
Xuke Fu,
Jordan Teeter,
Bingcheng Da,
Fariborz Kargar,
Houqiang Fu,
Alexander A. Balandin
Abstract:
We report the results of the study of the acoustic and optical phonons in Si-doped AlN thin films grown by metalorganic chemical vapor deposition on sapphire substrates. The Brillouin - Mandelstam and Raman light scattering spectroscopies were used to measure the acoustic and optical phonon frequencies close to the Brillouin zone center. The optical phonon frequencies reveal non-monotonic changes,…
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We report the results of the study of the acoustic and optical phonons in Si-doped AlN thin films grown by metalorganic chemical vapor deposition on sapphire substrates. The Brillouin - Mandelstam and Raman light scattering spectroscopies were used to measure the acoustic and optical phonon frequencies close to the Brillouin zone center. The optical phonon frequencies reveal non-monotonic changes, reflective of the variations in the thin-film strain and dislocation densities with the addition of Si dopant atoms. The acoustic phonon velocity decreases monotonically with increasing Si dopant concentration, reducing by ~300 m/s at the doping level of 3 x 10^19 1/cm3. Knowledge of the acoustic phonon velocities can be used to optimize ultra-wide bandgap semiconductor heterostructures and minimize the thermal boundary resistance of high-power devices.
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Submitted 13 August, 2024;
originally announced August 2024.
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Over 600 V Lateral AlN-on-AlN Schottky Barrier Diodes with Ultra-Low Ideality Factor
Authors:
Dinusha Herath Mudiyanselage,
Dawei Wang,
Ziyi He,
Bingcheng Da,
Houqiang Fu
Abstract:
This letter reports the demonstration of lateral AlN Schottky barrier diodes (SBDs) on single-crystal AlN substrates by metalorganic chemical vapor deposition (MOCVD) with an ultra-low ideality factor (η) of 1.65, a breakdown voltage (BV) of 640 V, and a record high normalized BV by the anode-to-cathode distance (LAC). The homoepitaxially grown AlN epilayers had much lower defect densities and exc…
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This letter reports the demonstration of lateral AlN Schottky barrier diodes (SBDs) on single-crystal AlN substrates by metalorganic chemical vapor deposition (MOCVD) with an ultra-low ideality factor (η) of 1.65, a breakdown voltage (BV) of 640 V, and a record high normalized BV by the anode-to-cathode distance (LAC). The homoepitaxially grown AlN epilayers had much lower defect densities and excellent surface morphology, and the AlN ohmic contacts also showed improvements. At forward bias, the devices exhibited ultra-low η of 1.65 and high Schottky barrier height of 1.94 eV. The device current was dominated by thermionic emission, while most previously reported AlN SBDs suffered from defect-induced current with much higher η of >4. Additionally, the devices also had excellent rectifying characteristics with ON/OFF ratios on the order of 10^7 to 10^9 and excellent thermal stability from 298 to 573 K. At reverse bias, the devices showed a high BV of 640 V and record-high normalized breakdown voltage (BV/LAC) in lateral AlN SBDs. This work represents a big step towards high-performance ultra-wide bandgap AlN-based high-voltage and high-power devices.
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Submitted 21 June, 2024;
originally announced June 2024.
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3 kV AlN Schottky Barrier Diodes on Bulk AlN Substrates by MOCVD
Authors:
Dinusha Herath Mudiyanselage,
Dawei Wang,
Ziyi He,
Bingcheng Da,
Houqiang Fu
Abstract:
This letter reports the first demonstration of AlN Schottky diodes on bulk AlN substrates by metalorganic chemical vapor phase deposition (MOCVD) with breakdown voltages exceeding 3 kV. The devices exhibited good rectifying characteristics with ON/OFF ratios on the order of 10^6 to 10^8 and excellent thermal stability from 298 to 623 K. The device Schottky barrier height increased from 0.89 to 1.8…
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This letter reports the first demonstration of AlN Schottky diodes on bulk AlN substrates by metalorganic chemical vapor phase deposition (MOCVD) with breakdown voltages exceeding 3 kV. The devices exhibited good rectifying characteristics with ON/OFF ratios on the order of 10^6 to 10^8 and excellent thermal stability from 298 to 623 K. The device Schottky barrier height increased from 0.89 to 1.85 eV, and the ideality factor decreased from 4.29 to 1.95 with increasing temperatures, which was ascribed to the inhomogeneous metal/AlN interface. At reverse bias of -3 kV, the devices showed a low leakage current of 200 nA without the incorporation of any field plate structures or passivation techniques. This work demonstrates the potential of AlN as an ultra-wide bandgap semiconductor and represents a big step toward the development of multi-kV AlN high-voltage and high-power devices.
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Submitted 8 November, 2023;
originally announced November 2023.
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Temperature Dependent Low-Frequency Noise Characteristics of NiO$_x$/Ga$_2$O$_3$ p-n Heterojunction Diodes
Authors:
Subhajit Ghosh,
Dinusha Herath Mudiyanselage,
Fariborz Kargar,
Yuji Zhao,
Houqiang Fu,
Alexander A. Balandin
Abstract:
We report on the temperature dependence of the low-frequency electronic noise in NiO$_x$/Ga$_2$O$_3$ p-n heterojunction diodes. The noise spectral density is of the 1/f-type near room temperature but shows signatures of Lorentzian components at elevated temperatures and at higher current levels (f is the frequency). We observed an intriguing non-monotonic dependence of the noise on temperature nea…
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We report on the temperature dependence of the low-frequency electronic noise in NiO$_x$/Ga$_2$O$_3$ p-n heterojunction diodes. The noise spectral density is of the 1/f-type near room temperature but shows signatures of Lorentzian components at elevated temperatures and at higher current levels (f is the frequency). We observed an intriguing non-monotonic dependence of the noise on temperature near T = 380$^\circ$ K. The Raman spectroscopy of the device structure suggests material changes, which results in reduced noise above this temperature. The normalized noise spectral density in such diodes was determined to be on the order of 10$^{-14}$ cm$^2$/Hz (f = 10 Hz) at 0.1 A/cm$^2$ current density. In terms of the noise level, NiO$_x$/Ga$_2$O$_3$ p-n diodes occupy an intermediate position among devices of various designs implemented with different ultra-wide-band-gap (UWBG) semiconductors. The obtained results are important for understanding the electronic properties of the UWBG heterojunctions and contribute to the development of noise spectroscopy as the quality assessment tool for new electronic materials and device technologies.
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Submitted 28 July, 2023;
originally announced July 2023.
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Low-Frequency Electronic Noise in the Aluminum Gallium Oxide Schottky Barrier Diodes
Authors:
Subhajit Ghosh,
Dinusha Herath Mudiyanselage,
Sergey Rumyantsev,
Yuji Zhao,
Houqiang Fu,
Stephen Goodnick,
Robert Nemanich,
Alexander A. Balandin
Abstract:
We report on the low-frequency electronic noise in (Al$_x$Ga$_{1-x}$)$_2$O$_3$ Schottky barrier diodes. The noise spectral density reveals 1/f dependence, characteristic of the flicker noise, with superimposed Lorentzian bulges at the intermediate current levels (f is the frequency). The normalized noise spectral density in such diodes was determined to be on the order of 10$^{-12}$ cm$^2$/Hz (f=1…
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We report on the low-frequency electronic noise in (Al$_x$Ga$_{1-x}$)$_2$O$_3$ Schottky barrier diodes. The noise spectral density reveals 1/f dependence, characteristic of the flicker noise, with superimposed Lorentzian bulges at the intermediate current levels (f is the frequency). The normalized noise spectral density in such diodes was determined to be on the order of 10$^{-12}$ cm$^2$/Hz (f=10 Hz) at 1 A/cm$^2$ current density. At the intermediate current regime, we observed the random telegraph signal noise, correlated with the appearance of Lorentzian bulges in the noise spectrum. The random telegraph signal noise was attributed to the defects near the Schottky barrier. The defects can affect the local electric field and the potential barrier, and correspondingly, impact the electric current. The obtained results help to understand noise in Schottky barrier diodes made of ultra-wide-band-gap semiconductors and can be used for the material and device quality assessment.
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Submitted 10 April, 2023;
originally announced April 2023.
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Light-Driven Raman Coherence as a Non-Thermal Route to Ultrafast Topology Switching
Authors:
C. Vaswani,
L. -L. Wang,
D. H. Mudiyanselage,
Q. Li,
P. M. Lozano,
G. Gu,
D. Cheng,
B. Song,
L. Luo,
R. H. J. Kim,
C. Huang,
Z. Liu,
M. Mootz,
I. E. Perakis,
Y. Yao,
K. M. Ho,
J. Wang
Abstract:
A grand challenge underlies the entire field of topology-enabled quantum logic and information science: how to establish topological control principles driven by quantum coherence and understand the time-dependence of such periodic driving? Here we demonstrate a THz pulse-induced phase transition in Dirac materials that is periodically driven by vibrational coherence due to excitation of the lowes…
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A grand challenge underlies the entire field of topology-enabled quantum logic and information science: how to establish topological control principles driven by quantum coherence and understand the time-dependence of such periodic driving? Here we demonstrate a THz pulse-induced phase transition in Dirac materials that is periodically driven by vibrational coherence due to excitation of the lowest Raman-active mode. Above a critical field threshold, there emerges a long-lived metastable phase with unique Raman coherent phonon-assisted switching dynamics, absent for optical pumping. The switching also manifest itself by non-thermal spectral shape, relaxation slowing down near the Lifshitz transition where the critical Dirac point (DP) occurs, and diminishing signals at the same temperature that the Berry curvature induced Anomalous Hall Effect varnishes. These results, together with first-principles modeling, identify a mode-selective Raman coupling that drives the system from strong to weak topological insulators, STI to WTI, with a Dirac semimetal phase established at a critical atomic displacement controlled by the phonon pumping. Harnessing of vibrational coherence can be extended to steer symmetry-breaking transitions, i.e., Dirac to Weyl ones, with implications on THz topological quantum gate and error correction applications.
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Submitted 4 December, 2019;
originally announced December 2019.
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Discovery of Terahertz Second Harmonic Generation from Lightwave Acceleration of Symmetry--Breaking Nonlinear Supercurrents
Authors:
C. Vaswani,
C. Sundahl,
M. Mootz,
D. H. Mudiyanselage,
J. H. Kang,
X. Yang,
D. Cheng,
C. Huang,
R. H. J. Kim,
Z. Liu,
L. Luo,
I. E. Perakis,
C. B. Eom,
J. Wang
Abstract:
We report terahertz (THz) second harmonic generation (SHG) in superconductors (SC) with inversion symmetric equilibrium states that forbid even-order nonlinearities. Such SHG signal is observed in single-pulse emission by periodic driving with a multi-cycle THz electric field tuned below the SC energy gap and vanishes above the SC critical temperature. We explain the microscopic physics by a dynam…
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We report terahertz (THz) second harmonic generation (SHG) in superconductors (SC) with inversion symmetric equilibrium states that forbid even-order nonlinearities. Such SHG signal is observed in single-pulse emission by periodic driving with a multi-cycle THz electric field tuned below the SC energy gap and vanishes above the SC critical temperature. We explain the microscopic physics by a dynamical symmetry breaking principle at sub-THz-cycle by using quantum kinetic modeling of the interplay between strong THz-lightwave nonlinearity and pulse propagation. The resulting non-zero integrated pulse area inside the SC drives lightwave nonlinear supercurrents due to sub--cycle Cooper pair acceleration, in contrast to d.c.-biased superconductors, which can be controlled by the bandstructure and the THz pump field.
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Submitted 3 December, 2019;
originally announced December 2019.
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Ultrafast Control of Excitonic Rashba Fine Structure by Phonon Coherences in a Metal Halide Perovskite CH$_3$NH$_3$PbI$_3$
Authors:
Z. Liu,
C. Vaswani,
X. Yang,
X. Zhao,
Y. Yao,
Z. Song,
D. Cheng,
Y. Shi,
L. Luo,
D. H. Mudiyanselage,
C. Huang,
J. -M. Park,
R. H. J. Kim,
J. Zhao,
Y. Yan,
K. -M. Ho,
J. Wang
Abstract:
We discover hidden Rashba fine structure in CH$_3$NH$_3$PbI$_3$ and demonstrate its quantum control by vibrational coherence through symmetry-selective vibronic (electron-phonon) coupling. Above a critical threshold of a single-cycle terahertz pump field, a Raman phonon mode distinctly modulates the middle excitonic states with {\em persistent} coherence for more than ten times longer than the one…
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We discover hidden Rashba fine structure in CH$_3$NH$_3$PbI$_3$ and demonstrate its quantum control by vibrational coherence through symmetry-selective vibronic (electron-phonon) coupling. Above a critical threshold of a single-cycle terahertz pump field, a Raman phonon mode distinctly modulates the middle excitonic states with {\em persistent} coherence for more than ten times longer than the ones on two sides that predominately couple to infrared phonons. These vibronic quantum beats, together with first-principles modeling of phonon periodically modulated Rashba parameters, identify a {\em three-fold} excitonic fine structure splitting, i.e., optically-forbidden, degenerate dark states in between two bright ones. Harnessing of vibronic quantum coherence and symmetry inspires light-perovskite quantum control and sub-THz-cycle "Rashba engineering" of spin-split bands for ultimate multi-function device.
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Submitted 19 March, 2020; v1 submitted 29 May, 2019;
originally announced May 2019.
