Showing 1–50 of 78 results for author: Olivero, P

Photoactivation of color centers induced by laser irradiation in ion-implanted diamond

Authors: V. Pugliese, E. Nieto Hernández, E. Corte, M. Govoni, S. Ditalia Tchernij, P. Olivero, J. Forneris

Abstract: Split-vacancy color centers in diamond are promising solid state platforms for the implementation of photonic quantum technologies. These luminescent defects are commonly fabricated upon low energy ion implantation and subsequent thermal annealing. Their technological uptake will require the availability of reliable methods for the controlled, large scale production of localized individual photon… ▽ More Split-vacancy color centers in diamond are promising solid state platforms for the implementation of photonic quantum technologies. These luminescent defects are commonly fabricated upon low energy ion implantation and subsequent thermal annealing. Their technological uptake will require the availability of reliable methods for the controlled, large scale production of localized individual photon emitters. This task is partially achieved by controlled ion implantation to introduce selected impurities in the host material, and requires the development of challenging beam focusing or collimation procedures coupled with single-ion detection techniques. We report on protocol for the direct optical activation of split-vacancy color centers in diamond via localized processing with continuous wave laser at mW optical powers. We demonstrate the activation of photoluminescent Mg- and Sn-related centers at both the ensemble and single-photon emitter level in ion-implanted, high-purity diamond crystals without further thermal processing. The proposed lithographic method enables the activation of individual color centers at specific positions of a large area sample by means of a relatively inexpensive equipment offering the real-time, in situ monitoring of the process. △ Less

Submitted 10 September, 2024; originally announced September 2024.

Comments: 17 pages, 7 figures

Creation, Control, and Modeling of NV Centers in Nanodiamonds

Authors: Pietro Aprà, Nour Hanne Amine, Adam Britel, Sofia Sturari, Veronica Varzi, Matteo Ziino, Lorenzo Mino, Paolo Olivero, Federico Picollo

Abstract: Sensing based on Nitrogen-Vacancy (NV) centers in nanodiamonds (NDs) offers significant potential across various applications. However, optimizing their quantum-optical properties remains challenging. This study focuses on enhancing and controlling the optical properties of NV centers in NDs through surface chemistry tuning and proton beam irradiation. Systematic thermal oxidations were performed… ▽ More Sensing based on Nitrogen-Vacancy (NV) centers in nanodiamonds (NDs) offers significant potential across various applications. However, optimizing their quantum-optical properties remains challenging. This study focuses on enhancing and controlling the optical properties of NV centers in NDs through surface chemistry tuning and proton beam irradiation. Systematic thermal oxidations were performed to investigate the evolution of surface chemical groups using IR spectroscopy and their influence on optical properties using photoluminescence spectroscopy and PL decay measurements. Proton irradiation was explored over a wide range of fluences (10^14 to 10^17 cm^-2) to precisely control the NV center concentration, identifying conditions that maximize creation and emission intensity. Furthermore, NV center charge state control was achieved by analyzing the NV-/NV0 ratio with varying surface terminations and NV center concentrations. A novel predictive mathematical model was developed to evaluate the efficiencies of forming NV- and NV0. Although tested specifically with proton-irradiated NDs, this model has broad applicability, representing a significant advancement in predicting the outcomes of ion-beam-based color center generation in diamond. △ Less

Submitted 1 July, 2024; originally announced July 2024.

3D Printing in Microfluidics: Experimental Optimization of Droplet Size and Generation Time through Flow Focusing, Phase, and Geometry Variation

Authors: Adam Britel, Giulia Tomagra, Pietro Aprà, Veronica Varzi, Sofia Sturari, Nour-hanne Amine, Paolo Olivero, Federico Picollo

Abstract: Droplet-based microfluidics systems have become widely used in recent years thanks to their advantages, varying from the possibility of handling small fluid volumes to directly synthesizing and encapsulating various living forms for biological-related applications. The effectiveness of such systems mainly depends on the ability to control some of these system's parameters, such as produced droplet… ▽ More Droplet-based microfluidics systems have become widely used in recent years thanks to their advantages, varying from the possibility of handling small fluid volumes to directly synthesizing and encapsulating various living forms for biological-related applications. The effectiveness of such systems mainly depends on the ability to control some of these system's parameters, such as produced droplet size and formation time, which represents a challenging task. This work reports an experimental study on tuning droplet size and generation time in a flow-focusing geometry fabricated with stereolithography 3D printing by exploring the interplay of phase and geometrical parameters. We produced droplets at different low flow rates of continuous and dispersed phases to assess the effect of each of these phases on the droplets' size and formation time. We observed that smaller droplets were produced for high viscosity oil and water phase, along with high flow rates. In addition, changing the microfluidics channels' width, and morphology of the orifice has shown a similar effect on droplet size, as shown in the case of high-viscosity solutions. The variation of the bifurcation angle shows a noticeable variation in terms of the achieved droplet size and formation time. We further investigated the impact of modifying the width ratio of the continuous and dispersed phases on droplet formation △ Less

Submitted 27 February, 2024; originally announced February 2024.

A comprehensive study of the effect of thermally induced surface terminations on nanodiamonds electrical properties

Authors: Sofia Sturari, Veronica Varzi, Pietro Aprà, Adam Britel, Nour-Hanne Amine, Greta Andrini, Emilio Corte, Giulia Tomagra, Lorenzo Mino, Paolo Olivero, Federico Picollo

Abstract: Nanodiamonds (NDs) gained increasing attention in multiple research areas due to the possibility of tuning their physical and chemical features by functionalizing their surface. This has a crucial impact on their electrical properties, which are essential in applications such as the development of innovative sensors and in the biomedical field. The great interest in electrical conduction in NDs ha… ▽ More Nanodiamonds (NDs) gained increasing attention in multiple research areas due to the possibility of tuning their physical and chemical features by functionalizing their surface. This has a crucial impact on their electrical properties, which are essential in applications such as the development of innovative sensors and in the biomedical field. The great interest in electrical conduction in NDs has driven the scientific community to its extensive investigation. The role of various functionalities has been considered and different conduction mechanisms have been proposed. In this work, we reported on a systematic study of the modification of the electrical properties of differently sized NDs, as a function of different thermal treatments in air, hydrogen or inert atmosphere. Samples were electrically characterized in controlled humidity conditions to consider the influence of water on conductivity. NDs electrical properties were interpreted in connection with their surface chemistry and structural features, probed with infrared and Raman spectroscopies. The presence of surface graphite, hydrogen terminations or water adsorbed on hydrophilic oxygen-containing functional groups rendered NDs more conductive. These moieties indeed enabled different conduction mechanisms, which were respectively graphite-mediated conduction, water-induced transfer doping and Grotthus mechanism in surface-adsorbed water. The effect of particles size on conductivity has also been evaluated and discussed. Our experimental findings shed light on the link between surface modifications and electrical properties of NDs, providing at the same time an interpretative key to understanding the effect of particles dimensions. △ Less

Submitted 19 December, 2023; originally announced December 2023.

Efficient activation of telecom emitters in silicon upon ns pulsed laser annealing

Authors: G. Andrini, G. Zanelli, S. Ditalia Tchernij, E. Corte, E. Nieto Hernandez, A. Verna, M. Cocuzza, E. Bernardi, S. Virzì, P. Traina, I. P. Degiovanni, M. Genovese, P. Olivero, J. Forneris

Abstract: The recent demonstration of optically active telecom emitters makes silicon a compelling candidate for solid state quantum photonic platforms. Particularly fabrication of the G center has been demonstrated in carbon-rich silicon upon conventional thermal annealing. However, the high-yield controlled fabrication of these emitters at the wafer-scale still requires the identification of a suitable th… ▽ More The recent demonstration of optically active telecom emitters makes silicon a compelling candidate for solid state quantum photonic platforms. Particularly fabrication of the G center has been demonstrated in carbon-rich silicon upon conventional thermal annealing. However, the high-yield controlled fabrication of these emitters at the wafer-scale still requires the identification of a suitable thermodynamic pathway enabling its activation following ion implantation. Here we demonstrate the efficient activation of G centers in high-purity silicon substrates upon ns pulsed laser annealing. The proposed method enables the non-invasive, localized activation of G centers by the supply of short non-stationary pulses, thus overcoming the limitations of conventional rapid thermal annealing related to the structural metastability of the emitters. A finite-element analysis highlights the strong non-stationarity of the technique, offering radically different defect-engineering capabilities with respect to conventional longer thermal treatments, paving the way to the direct and controlled fabrication of emitters embedded in integrated photonic circuits and waveguides. △ Less

Submitted 10 April, 2024; v1 submitted 20 April, 2023; originally announced April 2023.

4H-SiC Schottky diode radiation hardness assessment by IBIC microscopy

Authors: Ettore Vittone, Paolo Olivero, Milko Jaksic, Zeljko Pastuovic

Abstract: We report findings on the Ion Beam Induced Charge (IBIC) characterization of a 4H-SiC Schottky barrier diode (SBD), in terms of the modification of the Charge Collection Efficiency (CCE) distribution induced by 20 MeV C ions irradiations with fluences ranging from 20 to 200 ions/um2. The lateral IBIC microscopy with 4 MeV protons over the SBD cross section, carried out on the pristine diode eviden… ▽ More We report findings on the Ion Beam Induced Charge (IBIC) characterization of a 4H-SiC Schottky barrier diode (SBD), in terms of the modification of the Charge Collection Efficiency (CCE) distribution induced by 20 MeV C ions irradiations with fluences ranging from 20 to 200 ions/um2. The lateral IBIC microscopy with 4 MeV protons over the SBD cross section, carried out on the pristine diode evidenced the widening of the depletion layer extension as function of the applied bias and allowed the measurement of the minority carrier diffusion lengths. After the irradiation with C ions, lateral IBIC showed a significant modification of the CCE distribution, with a progressive shrinkage of the depletion layer as the fluence of the damaging C ions increases. A simple electrostatic model ruled out that the shrinkage is due to the implanted charge and ascribed the perturbation of the electrostatic landscape to radiation-induced defects with positive charge state. △ Less

Submitted 10 November, 2022; originally announced November 2022.

Magnesium-vacancy optical centers in diamond

Authors: Emilio Corte, Greta Andrini, Elena Nieto Hernández, Vanna Pugliese, Ângelo Costa, Goele Magchiels, Janni Moens, Shandirai Malven Tunhuma, Renan Villarreal, Lino M. C. Pereira, André Vantomme, João Guilherme Correia, Ettore Bernardi, Paolo Traina, Ivo Pietro Degiovanni, Ekaterina Moreva, Marco Genovese, Sviatoslav Ditalia Tchernij, Paolo Olivero, Ulrich Wahl, Jacopo Forneris

Abstract: We provide the first systematic characterization of the structural and photoluminescence properties of optically active defect centers fabricated upon implantation of 30-100 keV Mg+ ions in artificial diamond. The structural configurations of Mg-related defects were studied by the emission channeling technique for 27Mg implantations performed both at room-temperature and 800 °C, which allowed the… ▽ More We provide the first systematic characterization of the structural and photoluminescence properties of optically active defect centers fabricated upon implantation of 30-100 keV Mg+ ions in artificial diamond. The structural configurations of Mg-related defects were studied by the emission channeling technique for 27Mg implantations performed both at room-temperature and 800 °C, which allowed the identification of a major fraction of Mg atoms (~30-42%) in sites which are compatible with the split-vacancy structure of the MgV complex. A smaller fraction of Mg atoms (~13-17%) was found on substitutional sites. The photoluminescence emission was investigated both at the ensemble and individual defect level in a temperature range comprised between 5 K and 300 K, offering a detailed picture of the MgV-related emission properties and revealing the occurrence of previously unreported spectral features. The optical excitability of the MgV center was also studied as a function of the optical excitation wavelength enabling to identify the optimal conditions for photostable and intense emission. The results are discussed in the context of the preliminary experimental data and the theoretical models available in the literature, with appealing perspectives for the utilization of the tunable properties of the MgV center for quantum information processing applications. △ Less

Submitted 17 June, 2022; originally announced June 2022.

Comments: 7 figures

Spectral emission dependence of tin-vacancy centers in diamond from thermal processing and chemical functionalization

Authors: Emilio Corte, Selene Sachero, Sviatoslav Ditalia Tchernij, Tobias Lühmann, Sébastien Pezzagna, Paolo Traina, Ivo Pietro Degiovanni, Ekaterina Moreva, Paolo Olivero, Jan Meijer, Marco Genovese, Jacopo Forneris

Abstract: We report a systematic photoluminescence (PL) investigation of the spectral emission properties of individual optical defects fabricated in diamond upon ion implantation and annealing. Three spectral lines at 620 nm, 631 nm, and 647 nm are identified and attributed to the SnV center due to their occurrence in the PL spectra of the very same single-photon emitting defects. We show that the relative… ▽ More We report a systematic photoluminescence (PL) investigation of the spectral emission properties of individual optical defects fabricated in diamond upon ion implantation and annealing. Three spectral lines at 620 nm, 631 nm, and 647 nm are identified and attributed to the SnV center due to their occurrence in the PL spectra of the very same single-photon emitting defects. We show that the relative occurrence of the three spectral features can be modified by oxidizing the sample surface following thermal annealing. We finally report the relevant emission properties of each class of individual emitters, including the excited state emission lifetime and the emission intensity saturation parameters. △ Less

Submitted 14 June, 2021; originally announced June 2021.

Comments: 12 pages, 6 figures, 1 table

Spectral features of Pb-related color centers in diamond

Authors: Sviatoslav Ditalia Tchernij, Emilio Corte, Tobias Lühmann, Paolo Traina, Sébastien Pezzagna, Ivo Pietro Degiovanni, Georgios Provatas, Ekaterina Moreva, Jan Meijer, Paolo Olivero, Marco Genovese, Jacopo Forneris

Abstract: We report on the systematic characterization of the optical properties of diamond color centers based on Pb impurities. An ensemble photoluminescence analysis of their spectral emission was performed at different excitation wavelengths in the 405-520 nm range and at different temperatures in the 4-300 K range. The series of observed spectral features consist of different emission lines associated… ▽ More We report on the systematic characterization of the optical properties of diamond color centers based on Pb impurities. An ensemble photoluminescence analysis of their spectral emission was performed at different excitation wavelengths in the 405-520 nm range and at different temperatures in the 4-300 K range. The series of observed spectral features consist of different emission lines associated with Pb-related defects. Finally, a room-temperature investigation of single-photon emitters under 490.5 nm laser excitation is reported, revealing different spectral signatures with respect to those already reported under 514 nm excitation. This work represents a substantial progress with respect to previous studies on Pb-related color centers, both in the attribution of an articulated series of spectral features and in the understanding of the formation process of this type of defect, thus clarifying the potential of this system for high-impact applications in quantum technologies. △ Less

Submitted 2 June, 2021; originally announced June 2021.

Fluorine-based color centers in diamond

Authors: S. Ditalia Tchernij, T. Lühmann, E. Corte, F. Sardi, F. Picollo, P. Traina, M. Brajkovic, A. Crnjac, S. Pezzagna, I. P. Degiovanni, E. Moreva, P. Aprà, P. Olivero, Z. Siketić, J. Meijer, M. Genovese, J. Forneris

Abstract: We report on the creation and characterization of the luminescence properties of high-purity diamond substrates upon F ion implantation and subsequent thermal annealing. Their room-temperature photoluminescence emission consists of a weak emission line at 558 nm and of intense bands in the 600 - 750 nm spectral range. Characterization at liquid He temperature reveals the presence of a structured s… ▽ More We report on the creation and characterization of the luminescence properties of high-purity diamond substrates upon F ion implantation and subsequent thermal annealing. Their room-temperature photoluminescence emission consists of a weak emission line at 558 nm and of intense bands in the 600 - 750 nm spectral range. Characterization at liquid He temperature reveals the presence of a structured set of lines in the 600 - 670 nm spectral range. We discuss the dependence of the emission properties of F-related optical centers on different experimental parameters such as the operating temperature and the excitation wavelength. The correlation of the emission intensity with F implantation fluence, and the exclusive observation of the afore-mentioned spectral features in F-implanted and annealed samples provides a strong indication that the observed emission features are related to a stable F-containing defective complex in the diamond lattice. △ Less

Submitted 9 December, 2020; v1 submitted 28 September, 2020; originally announced September 2020.

Comments: 10 pages, 5 figures

Biocompatible technique for nanoscale magnetic field sensing with Nitrogen-Vacancy centers

Authors: Ettore Bernardi, Ekaterina Moreva, Paolo Traina, Giulia Petrini, Sviatoslav Ditalia Tchernij, Jacopo Forneris, Zelijko Pastuovic, Ivo Pietro Degiovanni, Paolo Olivero, M. Genovese

Abstract: The possibility of using Nitrogen-vacancy centers in diamonds to measure nanoscale magnetic fields with unprecedented sensitivity is one of the most significant achievements of quantum sensing. Here we present an innovative experimental set-up, showing an achieved sensitivity comparable to the state of the art ODMR protocols if the sensing volume is taken into account. The apparatus allows magneti… ▽ More The possibility of using Nitrogen-vacancy centers in diamonds to measure nanoscale magnetic fields with unprecedented sensitivity is one of the most significant achievements of quantum sensing. Here we present an innovative experimental set-up, showing an achieved sensitivity comparable to the state of the art ODMR protocols if the sensing volume is taken into account. The apparatus allows magnetic sensing in biological samples such as individual cells, as it is characterized by a small sensing volume and full bio-compatibility. The sensitivity at different optical powers is studied to extend this technique to the intercellular scale. △ Less

Submitted 16 June, 2020; v1 submitted 27 May, 2020; originally announced May 2020.

Comments: 6 pages, 5 figures

Quantum micro-nano devices fabricated in diamond by femtosecond laser and ion irradiation

Authors: Shane M. Eaton, J. P. Hadden, Vibhav Bharadwaj, Jacopo Forneris, Federico Picollo, Federico Bosia, Belen Sotillo, Argyro N. Giakoumaki, Ottavia Jedrkiewicz, Andrea Chiappini, Maurizio Ferrari, Roberto Osellame, Paul E. Barclay, Paolo Olivero, Roberta Ramponi

Abstract: Diamond has attracted great interest as a quantum technology platform thanks to its optically active nitrogen vacancy center (NV). The NV's ground state spin can be read out optically exhibiting long spin coherence times of about 1 ms even at ambient temperatures. In addition, the energy levels of the NV are sensitive to external fields. These properties make NVs attractive as a scalable platform… ▽ More Diamond has attracted great interest as a quantum technology platform thanks to its optically active nitrogen vacancy center (NV). The NV's ground state spin can be read out optically exhibiting long spin coherence times of about 1 ms even at ambient temperatures. In addition, the energy levels of the NV are sensitive to external fields. These properties make NVs attractive as a scalable platform for efficient nanoscale resolution sensing based on electron spins and for quantum information systems. Diamond photonics enhances optical interaction with NVs, beneficial for both quantum sensing and information. Diamond is also compelling for microfluidic applications due to its outstanding biocompatibility, with sensing functionality provided by NVs. However, it remains a significant challenge to fabricate photonics, NVs and microfluidics in diamond. In this Report, an overview is provided of ion irradiation and femtosecond laser writing, two promising fabrication methods for diamond based quantum technological devices. The unique capabilities of both techniques are described, and the most important fabrication results of color center, optical waveguide and microfluidics in diamond are reported, with an emphasis on integrated devices aiming towards high performance quantum sensors and quantum information systems of tomorrow △ Less

Submitted 16 April, 2020; originally announced April 2020.

Practical applications of quantum sensing: a simple method to enhance sensitivity of Nitrogen-Vacancy-based temperature sensors

Authors: E. Moreva, E. Bernardi, P. Traina, A. Sosso, S. Ditalia Tchernij, J. Forneris, F. Picollo, G. Brida, Z. Pastuovic, I. P. Degiovanni, P. Olivero, M. Genovese

Abstract: Nitrogen-vacancy centers in diamond allow measurement of environment properties such as temperature, magnetic and electric fields at nanoscale level, of utmost relevance for several research fields, ranging from nanotechnologies to bio-sensing. The working principle is based on the measurement of the resonance frequency shift of a single nitrogen-vacancy center (or an ensemble of them), usually de… ▽ More Nitrogen-vacancy centers in diamond allow measurement of environment properties such as temperature, magnetic and electric fields at nanoscale level, of utmost relevance for several research fields, ranging from nanotechnologies to bio-sensing. The working principle is based on the measurement of the resonance frequency shift of a single nitrogen-vacancy center (or an ensemble of them), usually detected by by monitoring the center photoluminescence emission intensity. Albeit several schemes have already been proposed, the search for the simplest and most effective one is of key relevance for real applications. Here we present a new continuous-wave lock-in based technique able to reach unprecedented sensitivity in temperature measurement at micro/nanoscale volumes (4.8 mK/Hz$^{1/2}$ in $μ$m$^3$). Furthermore, the present method has the advantage of being insensitive to the enviromental magnetic noise, that in general introduces a bias in the temperature measurement. △ Less

Submitted 23 December, 2019; originally announced December 2019.

Journal ref: Phys. Rev. Applied 13, 054057 (2020)

Recent Results from Polycrystalline CVD Diamond Detectors

Authors: RD42 Collaboration, L. Bäni, A. Alexopoulos, M. Artuso, F. Bachmair, M. Bartosik, H. Beck, V. Bellini, V. Belyaev, B. Bentele, A. Bes, J. -M. Brom, M. Bruzzi, G. Chiodini, D. Chren, V. Cindro, G. Claus, J. Collot, J. Cumalat, A. Dabrowski, R. D'Alessandro, D. Dauvergne, W. de Boer, C. Dorfer, M. Dünser , et al. (87 additional authors not shown)

Abstract: Diamond is a material in use at many nuclear and high energy facilities due to its inherent radiation tolerance and ease of use. We have characterized detectors based on chemical vapor deposition (CVD) diamond before and after proton irradiation. We present preliminary results of the spatial resolution of unirradiated and irradiated CVD diamond strip sensors. In addition, we measured the pulse hei… ▽ More Diamond is a material in use at many nuclear and high energy facilities due to its inherent radiation tolerance and ease of use. We have characterized detectors based on chemical vapor deposition (CVD) diamond before and after proton irradiation. We present preliminary results of the spatial resolution of unirradiated and irradiated CVD diamond strip sensors. In addition, we measured the pulse height versus particle rate of unirradiated and irradiated polycrystalline CVD (pCVD) diamond pad detectors up to a particle flux of $20\,\mathrm{MHz/cm^2}$ and a fluence up to $4 \times 10^{15}\,n/\mathrm{cm^2}$. △ Less

Submitted 16 October, 2019; originally announced October 2019.

Comments: Talk presented at the 2019 Meeting of the Division of Particles and Fields of the American Physical Society (DPF2019), July 29 - August 2, 2019, Northeastern University, Boston, C1907293

Feasibility study towards comparison of the g^(2)(0) measurement in the visible range

Authors: E. Moreva, P. Traina, R. A. Kirkwood, M. López, G. Brida, M. Gramegna, I. Ruo-Berchera, J. Forneris, S. Ditalia Tchernij, P. Olivero, C. J. Chunnilall, S. Kück, M. Genovese, I. P. Degiovanni

Abstract: This work reports on the pilot study, performed by INRIM, NPL and PTB, on the measurement of the g^(2)(0) parameter in the visible spectral range of a test single-photon source based on a colour centre in diamond. The development of single-photon sources is of great interest to the metrology community as well as the burgeoning quantum technologies industry. Measurement of the g^(2)(0) parameter pl… ▽ More This work reports on the pilot study, performed by INRIM, NPL and PTB, on the measurement of the g^(2)(0) parameter in the visible spectral range of a test single-photon source based on a colour centre in diamond. The development of single-photon sources is of great interest to the metrology community as well as the burgeoning quantum technologies industry. Measurement of the g^(2)(0) parameter plays a vital role in characterising and understanding single-photon emission. This comparison has been conducted by each partner individually using its own equipment at INRIM laboratories, which were responsible for the operation of the source △ Less

Submitted 16 January, 2019; v1 submitted 12 July, 2018; originally announced July 2018.

Journal ref: Metrologia 56, 015016 (2019)

Photoluminescence of lead-related optical centers in single-crystal diamond

Authors: S. Ditalia Tchernij, T. Lühmann, J. Forneris, T. Herzig, J. Küpper, A. Damin, S. Santonocito, P. Traina, E. Moreva, F. Celegato, S. Pezzagna, I. P. Degiovanni, M. Jakšić, M. Genovese, J. Meijer, P. Olivero

Abstract: We report on the creation and characterization of Pb-related color centers in diamond upon ion implantation and subse- quent thermal annealing. Their optical emission in photoluminescence (PL) regime consists of an articulated spectrum with intense emission peaks at 552.1 nm and 556.8 nm, accompanied by a set of additional lines in the 535700 nm range. The attribution of the PL emission to stable… ▽ More We report on the creation and characterization of Pb-related color centers in diamond upon ion implantation and subse- quent thermal annealing. Their optical emission in photoluminescence (PL) regime consists of an articulated spectrum with intense emission peaks at 552.1 nm and 556.8 nm, accompanied by a set of additional lines in the 535700 nm range. The attribution of the PL emission to stable Pb-based defects is corroborated by the correlation of its intensity with the implantation fluence of Pb ions, while none of the reported features is observed in reference samples implanted with C ions. Furthermore, PL measurements performed as a function of sample temperature (143-300 K range) and un- der different excitation wavelengths (532 nm, 514 nm, 405 nm) suggest that the complex spectral features observed in Pb-implanted diamond might be related to a variety of different defects and/or charge states. This work follows from previous reports on optically active centers in diamond based on group IV impurities, such as Si, Ge and Pb. In perspective, a comprehensive study of this set of defect complexes could bring significant insight on the common features involved in their formation and opto-physical properties, thus offering a solid basis for the devel- opment of a new generation of quantum-optical devices. △ Less

Submitted 5 June, 2018; originally announced June 2018.

Comments: 7 pages, 4 figures

Nanodiamonds-induced effects on neuronal firing of mouse hippocampal microcircuits

Authors: L. Guarina, C. Calorio, D. Gavello, E. Moreva, P. Traina, A. Battiato, S. Ditalia Tchernij, J. Forneris, M. Gai, F. Picollo, P. Olivero, M. Genovese, E. Carbone, A. Marcantoni, V. Carabelli

Abstract: Fluorescent nanodiamonds (FND) are carbon-based nanomaterials that can efficiently incorporate optically active photoluminescent centers such as the nitrogen-vacancy complex, thus making them promising candidates as optical biolabels and drug-delivery agents. FNDs exhibit bright fluorescence without photobleaching combined with high uptake rate and low cytotoxicity. Focusing on FNDs interference w… ▽ More Fluorescent nanodiamonds (FND) are carbon-based nanomaterials that can efficiently incorporate optically active photoluminescent centers such as the nitrogen-vacancy complex, thus making them promising candidates as optical biolabels and drug-delivery agents. FNDs exhibit bright fluorescence without photobleaching combined with high uptake rate and low cytotoxicity. Focusing on FNDs interference with neuronal function, here we examined their effect on cultured hippocampal neurons, monitoring the whole network development as well as the electrophysiological properties of single neurons. We observed that FNDs drastically decreased the frequency of inhibitory (from 1.81 Hz to 0.86 Hz) and excitatory (from 1.61 Hz to 0.68 Hz) miniature postsynaptic currents, and consistently reduced action potential (AP) firing frequency (by 36%), as measured by microelectrode arrays. On the contrary, bursts synchronization was preserved, as well as the amplitude of spontaneous inhibitory and excitatory events. Current-clamp recordings revealed that the ratio of neurons responding with AP trains of high-frequency (fast-spiking) versus neurons responding with trains of low-frequency (slow-spiking) was unaltered, suggesting that FNDs exerted a comparable action on neuronal subpopulations. At the single cell level, rapid onset of the somatic AP ("kink") was drastically reduced in FND-treated neurons, suggesting a reduced contribution of axonal and dendritic components while preserving neuronal excitability. △ Less

Submitted 2 March, 2018; originally announced March 2018.

Comments: 34 pages, 9 figures

Journal ref: Scientific Reports 8, 2221 (2018)

Polarized micro-Raman studies of femtosecond laser written stress-induced optical waveguides in diamond

Authors: B. Sotillo, A. Chiappini, V. Bharadwaj, J. P. Hadden, F. Bosia, P. Olivero, M. Ferrari, R. Ramponi, P. E. Barclay, S. M. Eaton

Abstract: Understanding the physical mechanisms of the refractive index modulation induced by femtosecond laser writing is crucial for tailoring the properties of the resulting optical waveguides. In this work we apply polarized Raman spectroscopy to study the origin of stress-induced waveguides in diamond, produced by femtosecond laser writing. The change in the refractive index induced by the femtosecond… ▽ More Understanding the physical mechanisms of the refractive index modulation induced by femtosecond laser writing is crucial for tailoring the properties of the resulting optical waveguides. In this work we apply polarized Raman spectroscopy to study the origin of stress-induced waveguides in diamond, produced by femtosecond laser writing. The change in the refractive index induced by the femtosecond laser in the crystal is derived from the measured stress in the waveguides. The results help to explain the waveguide polarization sensitive guiding mechanism, as well as providing a technique for their optimization. △ Less

Submitted 18 January, 2018; v1 submitted 24 November, 2017; originally announced November 2017.

Comments: 5 pages, 4 figures

Journal ref: Appl. Phys. Lett. 112, 031109 (2018)

Photo-physical properties of He-related color centers in diamond

Authors: G. Prestopino, M. Marinelli, E. Milani, C. Verona, G. Verona-Rinati P. Traina, E. Moreva, I. P. Degiovanni, M. Genovese, S. Ditalia Tchernij, F. Picollo, P. Olivero, J. Forneris

Abstract: Diamond is a promising platform for the development of technological applications in quantum optics and photonics. The quest for color centers with optimal photo-physical properties has led in recent years to the search for novel impurity-related defects in this material. Here, we report on a systematic investigation of the photo-physical properties of two He-related (HR) emission lines at 535 nm… ▽ More Diamond is a promising platform for the development of technological applications in quantum optics and photonics. The quest for color centers with optimal photo-physical properties has led in recent years to the search for novel impurity-related defects in this material. Here, we report on a systematic investigation of the photo-physical properties of two He-related (HR) emission lines at 535 nm and 560 nm created in three different diamond substrates upon implantation with 1.3 MeV He+ ions and subsequent annealing. The spectral features of the HR centers were studied in an "optical grade" diamond substrate as a function of several physical parameters, namely the measurement temperature, the excitation wavelength and the intensity of external electric fields. The emission lifetimes of the 535 nm and 560 nm lines were also measured by means of time-gated photoluminescence measurements, yielding characteristic decay times of (29 +- 5) ns and (106 +- 10) ns, respectively. The Stark shifting of the HR centers under the application of an external electrical field was observed in a CVD diamond film equipped with buried graphitic electrodes, suggesting a lack of inversion symmetry in the defects' structure. Furthermore, the photoluminescence mapping under 405 nm excitation of a "detector grade" diamond sample implanted at a 1x1010 cm-2 He+ ion fluence enabled to identify the spectral features of both the HR emission lines from the same localized optical spots. The reported results provide a first insight towards the understanding of the structure of He-related defects in diamond and their possible utilization in practical applications △ Less

Submitted 29 August, 2017; originally announced August 2017.

Comments: 9 pages, 3 figures

Single-photon-emitting optical centers in diamond fabricated upon Sn implantation

Authors: S. Ditalia Tchernij, T. Herzig, J. Forneris, J. Küpper, S. Pezzagna, P. Traina, E. Moreva, I. P. Degiovanni, G. Brida, N. Skukan, M. Genovese, M. Jakšić, J. Meijer, P. Olivero

Abstract: The fabrication of luminescent defects in single-crystal diamond upon Sn implantation and annealing is reported. The relevant spectral features of the optical centers (emission peaks at 593.5 nm, 620.3 nm, 630.7 nm and 646.7 nm) are attributed to Sn-related defects through the correlation of their photoluminescence (PL) intensity with the implantation fluence. Single Sn-related defects were identi… ▽ More The fabrication of luminescent defects in single-crystal diamond upon Sn implantation and annealing is reported. The relevant spectral features of the optical centers (emission peaks at 593.5 nm, 620.3 nm, 630.7 nm and 646.7 nm) are attributed to Sn-related defects through the correlation of their photoluminescence (PL) intensity with the implantation fluence. Single Sn-related defects were identified and characterized through the acquisition of their second-order auto-correlation emission functions, by means of Hanbury-Brown-Twiss interferometry. The investigation of their single-photon emission regime as a function of excitation laser power revealed that Sn-related defects are based on three-level systems with a 6 ns radiative decay lifetime. In a fraction of the studied centers, the observation of a blinking PL emission is indicative of the existence of a dark state. Furthermore, absorption dependence from the polarization of the excitation radiation with about 45 percent contrast was measured. This work shed light on the existence of a new optical center associated with a group-IV impurity in diamond, with similar photo-physical properties to the already well-known Si-V and Ge-V emitters, thus providing results of interest from both the fundamental and applicative points of view. △ Less

Submitted 26 September, 2017; v1 submitted 4 August, 2017; originally announced August 2017.

Comments: 10 pages, 4 figures

Mapping the local spatial charge in defective diamond by means of NV sensors - A "self-diagnostic" concept

Authors: J. Forneris, S. Ditalia Tchernij, P. Traina, E. Moreva, N. Skukan, M. Jakšić, V. Grilj, L. Croin, G. Amato, I. P. Degiovanni, B. Naydenov, F. Jelezko, M. Genovese, P. Olivero

Abstract: Electrically-active defects have a significant impact on the performance of electronic devices based on wide band-gap materials such as diamond. This issue is ubiquitous in diamond science and technology, since the presence of charge traps in the active regions of different classes of diamond-based devices (detectors, power diodes, transistors) can significantly affect their performances, due to t… ▽ More Electrically-active defects have a significant impact on the performance of electronic devices based on wide band-gap materials such as diamond. This issue is ubiquitous in diamond science and technology, since the presence of charge traps in the active regions of different classes of diamond-based devices (detectors, power diodes, transistors) can significantly affect their performances, due to the formation of space charge, memory effects and the degradation of the electronic response associated with radiation damage. Among the most common defects in diamond, the nitrogen-vacancy (NV) center possesses unique spin properties which enable high-sensitivity field sensing at the nanoscale. Here we demonstrate that NV ensembles can be successfully exploited to perform a direct local mapping of the internal electric field distribution of a graphite-diamond-graphite junction exhibiting electrical properties dominated by trap- and space-charge-related conduction mechanisms. By performing optically-detected magnetic resonance measurements, we performed both punctual readout and spatial mapping of the electric field in the active region at different bias voltages. In this novel "self-diagnostic" approach, defect complexes represent not only the source of detrimental space charge effects, but also a unique tool to directly investigate them, by providing experimental evidences on the conduction mechanisms that in previous studies could only be indirectly inferred on the basis of conventional electrical and optical characterization. △ Less

Submitted 24 June, 2017; originally announced June 2017.

Journal ref: Phys. Rev. Applied 10, 014024 (2018)

Direct experimental observation of nonclassicality in ensembles of single photon emitters

Authors: E. Moreva, P. Traina, J. Forneris, I. P. Degiovanni, S. Ditalia Tchernij, F. Picollo, G. Brida, P. Olivero, M. Genovese

Abstract: In this work we experimentally demonstrate for the first time a recently proposed criterion adressed to detect nonclassical behavior in the fluorescence emission of ensembles of single-photon emitters. In particular, we apply the method to study clusters of NV centres in diamond observed via single-photon-sensitive confocal microscopy. Theoretical considerations on the behavior of the parameter at… ▽ More In this work we experimentally demonstrate for the first time a recently proposed criterion adressed to detect nonclassical behavior in the fluorescence emission of ensembles of single-photon emitters. In particular, we apply the method to study clusters of NV centres in diamond observed via single-photon-sensitive confocal microscopy. Theoretical considerations on the behavior of the parameter at any arbitrary order in presence of poissonian noise are presented and, finally, the opportunity of detecting manifold coincidences is discussed. △ Less

Submitted 8 May, 2017; originally announced May 2017.

Journal ref: Phys. Rev. B 96, 195209 (2017)

Formation of buried conductive micro-channels in single crystal diamond with MeV C and He implantation

Authors: F. Picollo, P. Olivero, F. Bellotti, Ž. Pastuović, N. Skukan, A. Lo Giudice, G. Amato, M. Jakšić, E. Vittone

Abstract: As demonstrated in previous works, implantation with a MeV ion microbeam through masks with graded thickness allows the formation of conductive micro-channels in diamond which are embedded in the insulating matrix at controllable depths [P. Olivero et al., Diamond Relat. Mater. 18 (5-8), 870-876 (2009)]. In the present work we report about the systematic electrical characterization of such micro-c… ▽ More As demonstrated in previous works, implantation with a MeV ion microbeam through masks with graded thickness allows the formation of conductive micro-channels in diamond which are embedded in the insulating matrix at controllable depths [P. Olivero et al., Diamond Relat. Mater. 18 (5-8), 870-876 (2009)]. In the present work we report about the systematic electrical characterization of such micro-channels as a function of several implantation conditions, namely: ion species and energy, implantation fluence. The current-voltage (IV) characteristics of the buried channels were measured at room temperature with a two point probe station. Significant parameters such as the sheet resistance and the characteristic exponent (alpha) of the IV power-law trend were expressed as a function of damage density, with satisfactory compatibility between the results obtained in different implantation conditions. △ Less

Submitted 9 September, 2016; originally announced September 2016.

Comments: 19 pages, 5 figures

Journal ref: Diamond and Related Materials 19 (5-6), 466-469 (2010)

Characterization of Three-Dimensional Microstructures in Single Crystal Diamond

Authors: P. Olivero, S. Rubanov, P. Reichart, B. C. Gibson, S. T. Huntington, J. R. Rabeau, A. D. Greentree, J. Salzman, D. Moore, D. N. Jamieson, S. Prawer

Abstract: We report on the Raman and photoluminescence characterization of three-dimensional microstructures created in single crystal diamond with a Focused Ion Beam (FIB) assisted lift-off technique. The method is based on MeV ion implantation to create a buried etchable layer, followed by FIB patterning and selective etching. In the applications of such microstructures where the properties of high qualit… ▽ More We report on the Raman and photoluminescence characterization of three-dimensional microstructures created in single crystal diamond with a Focused Ion Beam (FIB) assisted lift-off technique. The method is based on MeV ion implantation to create a buried etchable layer, followed by FIB patterning and selective etching. In the applications of such microstructures where the properties of high quality single crystal diamond are most relevant, residual damage after the fabrication process represents a critical technological issue. The results of Raman and photoluminescence characterization indicate that the partial distortion of the sp3-bonded lattice and the formation of isolated point defects are effectively removed after thermal annealing, leaving low amounts of residual damage in the final structures. Three-dimensional microstructures in single-crystal diamond offer a large range of applications, such as quantum optics devices and fully integrated opto mechanical assemblies. △ Less

Submitted 1 September, 2016; originally announced September 2016.

Comments: 30 pages, 7 figures

Journal ref: Diamond and Related Materials 15 (10), 1614 1621 (2006)

Micromachining structured optical fibers using focused ion beam milling

Authors: C. Martelli, P. Olivero, J. Canning, N. Groothoff, B. Gibson, S. Huntington

Abstract: A focused ion beam is used to mill side holes in air-silica structured fibres. By way of example, side holes are introduced in two types of air-structured fibres (1) a photonic crystal four-ring fibre and (2) a 6-hole single ring step index structured fibre. A focused ion beam is used to mill side holes in air-silica structured fibres. By way of example, side holes are introduced in two types of air-structured fibres (1) a photonic crystal four-ring fibre and (2) a 6-hole single ring step index structured fibre. △ Less

Submitted 1 September, 2016; originally announced September 2016.

Comments: 15 pages, 4 figures

Journal ref: Optics Letters 32 (11), 1575-1577 (2007)

Semiconductor characterization by scanning ion beam induced charge (IBIC) microscopy

Authors: E. Vittone, Z. Pastuovic, P. Olivero, C. Manfredotti, M. Jaksic, A. Lo Giudice, F. Fizzotti, E. Colombo

Abstract: The acronym IBIC (Ion Beam Induced Charge) was coined in early 1990's to indicate a scanning microscopy technique which uses MeV ion beams as probes to image the basic electronic properties of semiconductor materials and devices. Since then, IBIC has become a widespread analytical technique to characterize materials for electronics or for radiation detection, as testified by more than 200 papers p… ▽ More The acronym IBIC (Ion Beam Induced Charge) was coined in early 1990's to indicate a scanning microscopy technique which uses MeV ion beams as probes to image the basic electronic properties of semiconductor materials and devices. Since then, IBIC has become a widespread analytical technique to characterize materials for electronics or for radiation detection, as testified by more than 200 papers published so far in peer-reviewed journals. Its success stems from the valuable information IBIC can provide on charge transport phenomena occurring in finished devices, not easily obtainable by other analytical techniques. However, IBIC analysis requires a robust theoretical background to correctly interpret experimental data. In order to illustrate the importance of using a rigorous mathematical formalism, we present in this paper a benchmark IBIC experiment aimed to test the validity of the interpretative model based on the Gunn's theorem and to provide an example of the analytical capability of IBIC to characterize semiconductor devices. △ Less

Submitted 1 September, 2016; originally announced September 2016.

Comments: 22 pages, 7 figures

Journal ref: Nuclear Instruments and Methods in Physics Research B 266, 1312-1318 (2008)

All-carbon multi-electrode array for real-time in vitro measurements of oxidizable neurotransmitters

Authors: F. Picollo, A. Battiato, E. Bernardi, M. Plaitano, C. Franchino, S. Gosso, A. Pasquarelli, E. Carbone, P. Olivero, V. Carabelli

Abstract: We report on the ion beam fabrication of all-carbon multi electrode arrays (MEAs) based on 16 graphitic micro-channels embedded in single-crystal diamond (SCD) substrates. The fabricated SCD-MEAs are systematically employed for the in vitro simultaneous amperometric detection of the secretory activity from populations of chromaffin cells, demonstrating a new sensing approach with respect to standa… ▽ More We report on the ion beam fabrication of all-carbon multi electrode arrays (MEAs) based on 16 graphitic micro-channels embedded in single-crystal diamond (SCD) substrates. The fabricated SCD-MEAs are systematically employed for the in vitro simultaneous amperometric detection of the secretory activity from populations of chromaffin cells, demonstrating a new sensing approach with respect to standard techniques. The biochemical stability and biocompatibility of the SCD-based device combined with the parallel recording of multi-electrodes array allow: i) a significant time saving in data collection during drug screening and/or pharmacological tests over a large number of cells, ii) the possibility of comparing altered cell functionality among cell populations, and iii) the repeatition of acquisition runs over many cycles with a fully non-toxic and chemically robust bio-sensitive substrate. △ Less

Submitted 25 August, 2016; originally announced August 2016.

Comments: 24 pages, 5 figures

Journal ref: Scientific Reports 6, 20682 (2016)

Fabrication of Ultrathin Single-Crystal Diamond Membranes

Authors: B. A. Fairchild, P. Olivero, S. Rubanov, A. D. Greentree, F. Waldermann, R. A. Taylor, I. Walmsley, J. M. Smith, S. Huntington, B. C. Gibson, D. N. Jamieson, S. Prawer

Abstract: We demonstrate the fabrication of sub-micron layers of single-crystal diamond suitable for subsequent processing as demonstrated by this test ring structure. This method is a significant enabling technology for nanomechanical and photonic structures incorporating colour-centres. The process uses a novel double implant process, annealing and chemical etching to produce membranes of diamond from sin… ▽ More We demonstrate the fabrication of sub-micron layers of single-crystal diamond suitable for subsequent processing as demonstrated by this test ring structure. This method is a significant enabling technology for nanomechanical and photonic structures incorporating colour-centres. The process uses a novel double implant process, annealing and chemical etching to produce membranes of diamond from single-crystal starting material, the thinnest layers achieved to date are 210 nm thick. △ Less

Submitted 31 August, 2016; originally announced August 2016.

Comments: 21 pages, 4 figures

Journal ref: Advanced Materials 20 (24), 4793-4798 (2008)

IBIC analysis of CdTe/CdS solar cells

Authors: E. Colombo, A. Bosio, S. Calusi, L. Giuntini, A. Lo Giudice, C. Manfredotti, M. Massi, P. Olivero, A. Romeo, N. Romeo, E. Vittone

Abstract: This paper reports on the investigation of the electronic properties of a thin film CdS/CdTe solar cell with the Ion Beam Induced Charge (IBIC) technique. The device under test is a thin film (total thickness around 10 um) multilayer heterojunction solar cell, displaying an efficiency of 14% under AM1.5 illumination conditions. The IBIC measurements were carried out using focused 3.150 MeV He ions… ▽ More This paper reports on the investigation of the electronic properties of a thin film CdS/CdTe solar cell with the Ion Beam Induced Charge (IBIC) technique. The device under test is a thin film (total thickness around 10 um) multilayer heterojunction solar cell, displaying an efficiency of 14% under AM1.5 illumination conditions. The IBIC measurements were carried out using focused 3.150 MeV He ions raster scanned onto the surface of the back electrode. The charge collection efficiency (CCE) maps show inhomogeneous response of the cell to be attributed to the polycrystalline nature of the CdTe bulk material. Finally, the evolution of the IBIC signal vs. the ion fluence was studied in order to evaluate the radiation hardness of the CdS/CdTe solar cells in view of their use in solar modules for space applications. △ Less

Submitted 26 August, 2016; originally announced August 2016.

Comments: 22 pages, 12 figures

Journal ref: Nuclear Instruments and Methods in Physics Research B 267, 2181-2184 (2009)

Charge collection efficiency mapping of interdigitated 4H-SiC detectors

Authors: E. Vittone, N. Skukan, Z. Pastuovic, P. Olivero, M. Jaksic

Abstract: The Ion Beam Induced Charge Collection (IBIC) technique was used to map the charge collection efficiency (CCE) of a 4H-SiC photodetector with coplanar interdigitated Schottky barrier electrodes and a common ohmic contact on the back side. IBIC maps were obtained using focused proton beams with energies of 0.9 MeV and 1.5 MeV, at different bias voltages and different sensitive electrode configurati… ▽ More The Ion Beam Induced Charge Collection (IBIC) technique was used to map the charge collection efficiency (CCE) of a 4H-SiC photodetector with coplanar interdigitated Schottky barrier electrodes and a common ohmic contact on the back side. IBIC maps were obtained using focused proton beams with energies of 0.9 MeV and 1.5 MeV, at different bias voltages and different sensitive electrode configurations (charge collection at the top Schottky or at the back Ohmic contact). These different experimental conditions have been modeled using a two dimensional finite element code to solve the adjoint carrier continuity equations and the results obtained have been compared with experimental results. The excellent consistency between the simulated and experimental CCE maps allows an exhaustive interpretation of the charge collection mechanisms occurring in pixellated or strip detectors. △ Less

Submitted 26 August, 2016; originally announced August 2016.

Comments: 22 pages, 11 figures

Journal ref: Nuclear Instruments and Methods in Physics Research B 267, 2197-2202 (2009)

Finite element analysis of ion-implanted diamond surface swelling

Authors: F. Bosia, P. Olivero, E. Vittone, F. Picollo, A. Lo Giudice, M. Jaksic, N. Skukan, L. Giuntini, M. Massi, S. Calusi, M. Vannoni, S. Lagomarsino, S. Sciortino

Abstract: We present experimental results and numerical Finite Element analysis to describe surface swelling due to the creation of buried graphite-like inclusions in diamond substrates subjected to MeV ion implantation. Numerical predictions are compared to experimental data for MeV proton and helium implantations, performed with scanning ion microbeams. Swelling values are measured with white light interf… ▽ More We present experimental results and numerical Finite Element analysis to describe surface swelling due to the creation of buried graphite-like inclusions in diamond substrates subjected to MeV ion implantation. Numerical predictions are compared to experimental data for MeV proton and helium implantations, performed with scanning ion microbeams. Swelling values are measured with white light interferometric profilometry in both cases. Simulations are based on a model which accounts for the through-the-thickness variation of mechanical parameters in the material, as a function of ion type, fluence and energy. Surface deformation profiles and internal stress distributions are analyzed and numerical results are seen to adequately fit experimental data. Results allow us to draw conclusions on structural damage mechanisms in diamond for different MeV ion implantations. △ Less

Submitted 29 August, 2016; originally announced August 2016.

Comments: 15 pages, 4 figures

Journal ref: Nuclear Instruments and Methods in Physics Research B 268, 2991-2995 (2010)

Monte Carlo analysis of a lateral IBIC experiment on a 4H-SiC Schottky diode

Authors: P. Olivero, J. Forneris, P. Gamarra, M. Jaksic, A. Lo Giudice, C. Manfredotti, Z. Pastuovic, N. Skukan, E. Vittone

Abstract: The transport properties of a 4H-SiC Schottky diode have been investigated by the Ion Beam Induced Charge (IBIC) technique in lateral geometry through the analysis of the charge collection efficiency (CCE) profile at a fixed applied reverse bias voltage. The cross section of the sample orthogonal to the electrodes was irradiated by a rarefied 4 MeV proton microbeam and the charge pulses have been… ▽ More The transport properties of a 4H-SiC Schottky diode have been investigated by the Ion Beam Induced Charge (IBIC) technique in lateral geometry through the analysis of the charge collection efficiency (CCE) profile at a fixed applied reverse bias voltage. The cross section of the sample orthogonal to the electrodes was irradiated by a rarefied 4 MeV proton microbeam and the charge pulses have been recorded as function of incident proton position with a spatial resolution of 2 um. The CCE profile shows a broad plateau with CCE values close to 100% occurring at the depletion layer, whereas in the neutral region, the exponentially decreasing profile indicates the dominant role played by the diffusion transport mechanism. Mapping of charge pulses was accomplished by a novel computational approach, which consists in mapping the Gunn's weighting potential by solving the electrostatic problem by finite element method and hence evaluating the induced charge at the sensing electrode by a Monte Carlo method. The combination of these two computational methods enabled an exhaustive interpretation of the experimental profiles and allowed an accurate evaluation both of the electrical characteristics of the active region (e.g. electric field profiles) and of basic transport parameters (i. e. diffusion length and minority carrier lifetime). △ Less

Submitted 29 August, 2016; originally announced August 2016.

Comments: 25 pages, 5 figures

Journal ref: Nuclear Instruments and Methods in Physics Research B 269, 2350-2354 (2011)

Focused ion beam fabrication and IBIC characterization of a diamond detector with buried electrodes

Authors: P. Olivero, J. Forneris, M. Jaksic, Z. Pastuovic, F. Picollo, N. Skukan, E. Vittone

Abstract: This paper reports on the fabrication and characterization of a high purity monocrystalline diamond detector with buried electrodes realized by the selective damage induced by a focused 6 MeV carbon ion beam scanned over a pattern defined at the micrometric scale. A suitable variable-thickness mask was deposited on the diamond surface in order to modulate the penetration depth of the ions and to s… ▽ More This paper reports on the fabrication and characterization of a high purity monocrystalline diamond detector with buried electrodes realized by the selective damage induced by a focused 6 MeV carbon ion beam scanned over a pattern defined at the micrometric scale. A suitable variable-thickness mask was deposited on the diamond surface in order to modulate the penetration depth of the ions and to shallow the damage profile toward the surface. After the irradiation, the sample was annealed at high temperature in order to promote the conversion to the graphitic phase of the end-of-range regions which experienced an ion-induced damage exceeding the damage threshold, while recovering the sub-threshold damaged regions to the highly resistive diamond phase. This process provided conductive graphitic electrodes embedded in the insulating diamond matrix; the presence of the variable-thickness mask made the terminations of the channels emerging at the diamond surface and available to be connected to an external electronic circuit. In order to evaluate the quality of this novel microfabrication procedure based on direct ion writing, we performed frontal Ion Beam Induced Charge (IBIC) measurements by raster scanning focused MeV ion beams onto the diamond surface. Charge collection efficiency (CCE) maps were measured at different bias voltages. The interpretation of such maps was based on the Shockley-Ramo-Gunn formalism. △ Less

Submitted 25 August, 2016; originally announced August 2016.

Comments: 18 pages, 6 figures

Journal ref: Nuclear Instruments and Methods in Physics Research B 269, 2340-2344 (2011)

Lateral IBIC characterization of single crystal synthetic diamond detectors

Authors: A. Lo Giudice, P. Olivero, C. Manfredotti, M. Marinelli, E. Milani, F. Picollo, G. Prestopino, A. Re, V. Rigato, C. Verona, G. Verona-Rinati, E. Vittone

Abstract: In order to evaluate the charge collection efficiency (CCE) profile of single-crystal diamond devices based on a p type/intrinsic/metal configuration, a lateral Ion Beam Induced Charge (IBIC) analysis was performed over their cleaved cross sections using a 2 MeV proton microbeam. CCE profiles in the depth direction were extracted from the cross-sectional maps at variable bias voltage. IBIC spectra… ▽ More In order to evaluate the charge collection efficiency (CCE) profile of single-crystal diamond devices based on a p type/intrinsic/metal configuration, a lateral Ion Beam Induced Charge (IBIC) analysis was performed over their cleaved cross sections using a 2 MeV proton microbeam. CCE profiles in the depth direction were extracted from the cross-sectional maps at variable bias voltage. IBIC spectra relevant to the depletion region extending beneath the frontal Schottky electrode show a 100% CCE, with a spectral resolution of about 1.5%. The dependence of the width of the high efficiency region from applied bias voltage allows the constant residual doping concentration of the active region to be evaluated. The region where the electric field is absent shows an exponentially decreasing CCE profile, from which it is possible to estimate the diffusion length of the minority carriers by means of a drift-diffusion model. △ Less

Submitted 25 August, 2016; originally announced August 2016.

Comments: 17 pages, 6 figures

Journal ref: Physica Status Solidi - Rapid Research Letters 5 (2), 80-82 (2011)

Development and characterization of a diamond-insulated graphitic multi electrode array realized with ion beam lithography

Authors: F. Picollo, A. Battiato, E. Carbone, L. Croin, E. Enrico, J. Forneris, S. Gosso, P. Olivero, A. Pasquarelli, V. Carabelli

Abstract: The detection of quantal exocytic events from neurons and neuroendocrine cells is a challenging task in neuroscience. One of the most promising platforms for the development of a new generation of biosensors is diamond, due to its biocompatibility, transparency and chemical inertness. Moreover, the electrical properties of diamond can be turned from a perfect insulator into a conductive material (… ▽ More The detection of quantal exocytic events from neurons and neuroendocrine cells is a challenging task in neuroscience. One of the most promising platforms for the development of a new generation of biosensors is diamond, due to its biocompatibility, transparency and chemical inertness. Moreover, the electrical properties of diamond can be turned from a perfect insulator into a conductive material (resistivity Ohm cm) by exploiting the metastable nature of this allotropic form of carbon. A 16 channels MEA (Multi Electrode Array) suitable for cell culture growing has been fabricated by means of ion implantation. A focused 1.2 MeV He+ beam was scanned on a IIa single-crystal diamond sample (4.5x4.5x0.5 mm3) to cause highly damaged sub-superficial structures that were defined with micrometric spatial resolution. After implantation, the sample was annealed. This process provides the conversion of the sub-superficial highly damaged regions to a graphitic phase embedded in a highly insulating diamond matrix. Thanks to a three-dimensional masking technique, the endpoints of the sub-superficial channels emerge in contact with the sample surface, therefore being available as sensing electrodes. Cyclic voltammetry and amperometry measurements of solutions with increasing concentrations of adrenaline were performed to characterize the biosensor sensitivity. The reported results demonstrate that this new type of biosensor is suitable for in vitro detection of catecholamine release. △ Less

Submitted 25 August, 2016; originally announced August 2016.

Comments: 14 pages, 5 figures

Journal ref: Sensors 15, 515-528 (2015)

IBIC characterization of an ion-beam-micromachined multi-electrode diamond detector

Authors: J. Forneris, V. Grilj, M. Jaksic, A. Lo Giudice, P. Olivero, F. Picollo, N. Skukan, C. Verona, G. Verona-Rinati, E. Vittone

Abstract: Deep Ion Beam Lithography (DIBL) has been used for the direct writing of buried graphitic regions in monocrystalline diamond with micrometric resolution. Aiming at the development and the characterization of a fully ion-beam-micromachined solid state ionization chamber, a device with interdigitated electrodes was fabricated by using a 1.8 MeV He+ ion microbeam scanning on a homoepitaxial, grown by… ▽ More Deep Ion Beam Lithography (DIBL) has been used for the direct writing of buried graphitic regions in monocrystalline diamond with micrometric resolution. Aiming at the development and the characterization of a fully ion-beam-micromachined solid state ionization chamber, a device with interdigitated electrodes was fabricated by using a 1.8 MeV He+ ion microbeam scanning on a homoepitaxial, grown by chemical vapour deposition (CVD). In order to evaluate the ionizing-radiation-detection performance of the device, charge collection efficiency (CCE) maps were extracted from Ion Beam Induced Charge (IBIC) measurements carried out by probing different arrangements of buried microelectrodes. The analysis of the CCE maps allowed for an exhaustive evaluation of the detector features, in particular the individuation of the different role played by electrons and holes in the formation of the induced charge pulses. Finally, a comparison of the performances of the detector with buried graphitic electrodes with those relevant to conventional metallic surface electrodes evidenced the formation of a dead layer overlying the buried electrodes as a result of the fabrication process. △ Less

Submitted 25 August, 2016; originally announced August 2016.

Comments: 17 pages, 6 figures

Journal ref: Nuclear Instruments and Methods in Physics Research B 306, 181-185 (2013)

Evidence of light guiding in ion-implanted diamond

Authors: S. Lagomarsino, P. Olivero, F. Bosia, M. Vannoni, S. Calusi, L. Giuntini, M. Massi

Abstract: We demonstrate the feasibility of fabricating light-waveguiding microstructures in bulk single-crystal diamond by means of direct ion implantation with a scanning microbeam, resulting in the modulation of the refractive index of the ion-beam damaged crystal. Direct evidence of waveguiding through such buried microchannels is obtained with a phase-shift micro-interferometric method allowing the stu… ▽ More We demonstrate the feasibility of fabricating light-waveguiding microstructures in bulk single-crystal diamond by means of direct ion implantation with a scanning microbeam, resulting in the modulation of the refractive index of the ion-beam damaged crystal. Direct evidence of waveguiding through such buried microchannels is obtained with a phase-shift micro-interferometric method allowing the study of the multi-modal structure of the propagating electromagnetic field. The possibility of defining optical and photonic structures by direct ion writing opens a range of new possibilities in the design of quantum-optical devices in bulk single crystal diamond. △ Less

Submitted 25 August, 2016; originally announced August 2016.

Comments: 10 pages, 4 figures

Journal ref: Physical Review Letters 105, 233903 (2010)

Direct fabrication of three-dimensional buried conductive channels in single crystal diamond with ion microbeam induced graphitization

Authors: P. Olivero, G. Amato, F. Bellotti, O. Budnyk, E. Colombo, M. Jaksic, A. Lo Giudice, C. Manfredotti, Z. Pastuovic, F. Picollo, N. Skukan, M. Vannoni, E. Vittone

Abstract: We report on a novel method for the fabrication of three-dimensional buried graphitic micropaths in single crystal diamond with the employment of focused MeV ions. The use of implantation masks with graded thickness at the sub-micrometer scale allows the formation of conductive channels which are embedded in the insulating matrix at controllable depths. In particular, the modulation of the channel… ▽ More We report on a novel method for the fabrication of three-dimensional buried graphitic micropaths in single crystal diamond with the employment of focused MeV ions. The use of implantation masks with graded thickness at the sub-micrometer scale allows the formation of conductive channels which are embedded in the insulating matrix at controllable depths. In particular, the modulation of the channels depth at their endpoints allows the surface contacting of the channel terminations with no need of further fabrication stages. In the present work we describe the sample masking, which includes the deposition of semi spherical gold contacts on the sample surface, followed by MeV ion implantation. Because of the significant difference between the densities of pristine and amorphous or graphitized diamond, the formation of buried channels has a relevant mechanical effect on the diamond structure, causing localized surface swelling, which has been measured both with interferometric profilometry and atomic force microscopy. The electrical properties of the buried channels are then measured with a two point probe station: clear evidence is given that only the terminal points of the channels are electrically connected with the surface, while the rest of the channels extends below the surface. IV measurements are employed also to qualitatively investigate the electrical properties of the channels as a function of implantation fluence and annealing. △ Less

Submitted 26 August, 2016; originally announced August 2016.

Comments: 27 pages, 10 figures

Journal ref: Diamond and Related Materials 18, 870-876 (2009)

Multitechnique characterization of lapis lazuli for provenance study

Authors: A. Lo Giudice, A. Re, S. Calusi, L. Giuntini, M. Massi, P. Olivero, G. Pratesi, M. Albonico, E. Conz

Abstract: Lapis Lazuli is one of the oldest precious stone, being used for glyptic as early as 7000 years ago: jewels, amulets, seals and inlays are examples of objects produced using this material. Only few sources of Lapis Lazuli exist in the world due to the low probability of geological conditions in which it can form, so that the possibility to associate the raw material to man-made objects helps to re… ▽ More Lapis Lazuli is one of the oldest precious stone, being used for glyptic as early as 7000 years ago: jewels, amulets, seals and inlays are examples of objects produced using this material. Only few sources of Lapis Lazuli exist in the world due to the low probability of geological conditions in which it can form, so that the possibility to associate the raw material to man-made objects helps to reconstruct trade routes. Since art objects produced using Lapis Lazuli are valuable, only non-destructive investigations can be carried out to identify the provenance of the raw materials. Ionoluminescence (IL) is a good candidate for this task. Similarly to cathodoluminescence (CL), IL consists in the collection of luminescence spectra induced by MeV ion (usually protons) irradiation. The main advantage of IL consists in the possibility of working in air while measuring simultaneously the composition of major and trace element by means of complementary Ion Beam Analysis techniques like PIXE or PIGE (Particle Induce X-ray or Gamma-ray Emission). In the present work a systematic study of the luminescence properties of Lapis Lazuli under charged particles irradiation is reported. In a first phase a multi-technique approach was adopted (CL, SEM with microanalysis, micro-Raman) to characterise luminescent minerals. This characterisation was propaedeutic for IL/PIXE/PIGE measurements carried out on significant areas selected on the basis of results obtained previously. Criteria to identify provenance of Lapis Lazuli from four of the main sources (Afghanistan, Pamir Mountains in Tajikistan, Chile and Siberia) were proposed. △ Less

Submitted 26 August, 2016; originally announced August 2016.

Comments: 9 pages, 5 figures

Journal ref: Analytical and Bioanalytical Chemistry 395 (7), 2211 2217 (2009)

Direct fabrication and IV characterization of sub-surface conductive channels in diamond with MeV ion implantation

Authors: P. Olivero, G. Amato, F. Bellotti, S. Borini, A. Lo Giudice, F. Picollo, E. Vittone

Abstract: In the present work we report about the investigation of the conduction mechanism of sp2 carbon micro-channels buried in single crystal diamond. The structures are fabricated with a novel technique which employs a MeV focused ion-beam to damage diamond in conjunction with variable thickness masks. This process changes significantly the structural proprieties of the target material, because the ion… ▽ More In the present work we report about the investigation of the conduction mechanism of sp2 carbon micro-channels buried in single crystal diamond. The structures are fabricated with a novel technique which employs a MeV focused ion-beam to damage diamond in conjunction with variable thickness masks. This process changes significantly the structural proprieties of the target material, because the ion nuclear energy loss induces carbon conversion from sp3 to sp2 state mainly at the end of range of the ions (few micrometers). Furthermore, placing a mask with increasing thickness on the sample it is possible to modulate the channels depth at their endpoints, allowing their electrical connection with the surface. A single-crystal HPHT diamond sample was implanted with 1.8 MeV He+ ions at room temperature, the implantation fluence was set in the range 2.1x10^16 - 6.3x10^17 ions cm^-2, determining the formation of buried micro-channels at 3 um. After deposition of metallic contacts at the channels' endpoints, the electrical characterization was performed measuring the I-V curves at variable temperatures in the 80-690 K range. The Variable Range Hopping model was used to fit the experimental data in the ohmic regime, allowing the estimation of characteristic parameters such as the density of localized states at the Fermi level. A value of 5.5x10^17 states cm-3 eV-1 was obtained, in satisfactory agreement with values previously reported in literature. The power-law dependence between current and voltage is consistent with the space charge limited mechanism at moderate electric fields. △ Less

Submitted 26 August, 2016; originally announced August 2016.

Comments: 17 pages, 8 figures

Journal ref: The European Physical Journal B 75 (2), 127 132 (2010)

Controlled variation of the refractive index in ion-damaged diamond

Authors: P. Olivero, S. Calusi, L. Giuntini, S. Lagomarsino, A. Lo Giudice, M. Massi, S. Sciortino, M. Vannoni, E. Vittone

Abstract: A fine control of the variation of the refractive index as a function of structural damage is essential in the fabrication of diamond-based optical and photonic devices. We report here about the variation of the real part of the refractive index at lambda=632.8 nm in high quality single crystal diamond damaged with 2 and 3 MeV protons at low-medium fluences (10^13 - 10^17 ions cm^-2). After implan… ▽ More A fine control of the variation of the refractive index as a function of structural damage is essential in the fabrication of diamond-based optical and photonic devices. We report here about the variation of the real part of the refractive index at lambda=632.8 nm in high quality single crystal diamond damaged with 2 and 3 MeV protons at low-medium fluences (10^13 - 10^17 ions cm^-2). After implanting the samples in 125x125 um^2 areas with a raster scanning ion microbeam, the variation of optical thickness of the implanted regions was measured with laser interferometric microscopy. The results were analyzed with a model based on the specific damage profile. The technique allows the direct fabrication of optical structures in bulk diamond based on the localized variation of the refractive index, which will be explored in future works. △ Less

Submitted 26 August, 2016; originally announced August 2016.

Comments: 15 pages, 4 figures

Journal ref: Diamond and Related Materials 19 (5-6), 428-431 (2010)

Raman spectroscopic features of the neutral vacancy in diamond from ab initio quantum-mechanical calculations

Authors: J. Baima, A. Zelferino, P. Olivero, A. Erba, R. Dovesi

Abstract: Quantum-mechanical ab initio calculations are performed to elucidate the vibrational spectroscopic features of a common irradiation-induced defect in diamond, i.e. the neutral vacancy. Raman spectra are computed analytically through a Coupled-Perturbed-Hartree-Fock/Kohn-Sham approach as a function of both different defect spin states and defect concentration. The experimental Raman features of def… ▽ More Quantum-mechanical ab initio calculations are performed to elucidate the vibrational spectroscopic features of a common irradiation-induced defect in diamond, i.e. the neutral vacancy. Raman spectra are computed analytically through a Coupled-Perturbed-Hartree-Fock/Kohn-Sham approach as a function of both different defect spin states and defect concentration. The experimental Raman features of defective diamond located in the 400-1300 cm-1 spectral range, i.e. below the first-order line of pristine diamond at 1332 cm-1 , are well reproduced, thus corroborating the picture according to which, at low damage densities, this spectral region is mostly affected by non-graphitic sp3 defects. No peaks above 1332 cm-1 are found, thus ruling out previous tentative assignments of different spectral features (at 1450 and 1490 cm-1) to the neutral vacancy. The perturbation introduced by the vacancy to the thermal nuclear motion of carbon atoms in the defective lattice is discussed in terms of atomic anisotropic displacement parameters (ADPs), computed from converged lattice dynamics calculations. △ Less

Submitted 26 August, 2016; originally announced August 2016.

Comments: 8 pages, 5 figures, 1 table

Journal ref: Physical Chemistry Chemical Physics 18, 1961-1968 (2016)

Luminescence centers in proton irradiated single crystal CVD diamond

Authors: C. Manfredotti, S. Calusi, A. Lo Giudice, L. Giuntini, M. Massi, P. Olivero, A. Re

Abstract: Diamond displays a large variety of luminescence centers which define its optical properties and can be either created or modified by irradiation. The main purpose of the present work is to study the radiation hardness of several of such centers in homoepitaxial single crystal CVD diamond by following the evolution of photoluminescence and ionoluminescence upon 2 MeV proton irradiation. Luminescen… ▽ More Diamond displays a large variety of luminescence centers which define its optical properties and can be either created or modified by irradiation. The main purpose of the present work is to study the radiation hardness of several of such centers in homoepitaxial single crystal CVD diamond by following the evolution of photoluminescence and ionoluminescence upon 2 MeV proton irradiation. Luminescence decays were observed with values of the fluence at half of the starting luminescence (F1/2) of the order of 1014 cm-2. The 3H center displayed a non monotonic behavior, with a growing behavior and a subsequent decay with a rather high F1/2 value (in the order of few 1016 cm-2), maintaining at the highest fluences an intensity significantly higher than the blue A-band. A simple model based on a double-exponential trend was defined to fit with satisfactory accuracy the evolution of the 3H center. Several PL centers (namely: 3H, TR12, 491 nm, 494 nm) exhibited clear correlations and anti-correlations in their fluence dependences, which were considered in the attempt to acquire some insight into their possible alternative attributions. △ Less

Submitted 25 August, 2016; originally announced August 2016.

Comments: 20 pages, 7 figures

Journal ref: Diamond and Related Materials 19, 854-860 (2010)

Modification of the structure of diamond with MeV ion implantation

Authors: F. Bosia, N. Argiolas, M. Bazzan, P. Olivero, F. Picollo, A. Sordini, M. Vannoni, E. Vittone

Abstract: We present experimental results and numerical simulations to investigate the modification of structural-mechanical properties of ion-implanted single-crystal diamond. A phenomenological model is used to derive an analytical expression for the variation of mass density and elastic properties as a function of damage density in the crystal. These relations are applied together with SRIM Monte Carlo s… ▽ More We present experimental results and numerical simulations to investigate the modification of structural-mechanical properties of ion-implanted single-crystal diamond. A phenomenological model is used to derive an analytical expression for the variation of mass density and elastic properties as a function of damage density in the crystal. These relations are applied together with SRIM Monte Carlo simulations to set up Finite Element simulations for the determination of internal strains and surface deformation of MeV-ion-implanted diamond samples. The results are validated through comparison with high resolution X-ray diffraction and white-light interferometric profilometry experiments. The former are carried out on 180 keV B implanted diamond samples, to determine the induced structural variation, in terms of lattice spacing and disorder, whilst the latter are performed on 1.8 MeV He implanted diamond samples to measure surface swelling. The effect of thermal processing on the evolution of the structural-mechanical properties of damaged diamond is also evaluated by performing the same profilometric measurements after annealing at 1000 °C, and modeling the obtained trends with a suitably modified analytical model. The results allow the development of a coherent model describing the effects of MeV-ion-induced damage on the structural-mechanical properties of single-crystal diamond. In particular, we suggest a more reliable method to determine the so-called diamond "graphitization threshold" for the considered implantation type. △ Less

Submitted 25 August, 2016; originally announced August 2016.

Comments: 19 pages, 4 figures

Journal ref: Diamond and Related Materials 20, 774-778 (2011)

Ultra-smooth single crystal diamond surfaces resulting from implantation and lift-off processes

Authors: T. N. Tran Thi, B. Fernandez, D. Eon, E. Gheeraert, J. Hartwig, T. A. Lafford, A. Perrat-Mabilon, C. Peaucelle, P. Olivero, E. Bustarret

Abstract: A method for obtaining a smooth, single crystal diamond surface is presented, whereby a sacrificial defective layer is created by implantation and graphitized by annealing before being selectively etched. We have used O+ at 240 keV, the main process variables being the ion fluence (ranging from 3x10^15 cm^-2 to 3x10^17 cm^-2) and the final etching process (wet etch, H2 plasma and annealing in air)… ▽ More A method for obtaining a smooth, single crystal diamond surface is presented, whereby a sacrificial defective layer is created by implantation and graphitized by annealing before being selectively etched. We have used O+ at 240 keV, the main process variables being the ion fluence (ranging from 3x10^15 cm^-2 to 3x10^17 cm^-2) and the final etching process (wet etch, H2 plasma and annealing in air). The substrates were characterized by atomic force microscopy, optical profilometry and white beam X-ray topography. The influence of the various process parameters on the resulting lift-off efficiency and final surface roughness is discussed. An O+ fluence of 2x10^17 cm^-2 was found to result in sub-nanometre roughness over tens of um^2. △ Less

Submitted 25 August, 2016; originally announced August 2016.

Comments: 4 pages, 4 figures

Journal ref: Physica Status Solidi A 208 (9), 2057-2061 (2011)

An upper limit on the lateral vacancy diffusion length in diamond

Authors: J. O. Orwa, K. Ganesan, J. Newnham, C. Santori, P. Barclay, K. M. C. Fu, R. G. Beausoleil, I. Aharonovich, B. A. Fairchild, P. Olivero, A. D. Greentree, S. Prawer

Abstract: Ion implantation is widely used to modify the structural, electrical and optical properties of materials. By appropriate masking, this technique can be used to define nano- and micro-structures. However, depending on the type of mask used, experiments have shown that vacancy-related substrate modification can be inferred tens of microns away from the edge of the mask used to define the implanted r… ▽ More Ion implantation is widely used to modify the structural, electrical and optical properties of materials. By appropriate masking, this technique can be used to define nano- and micro-structures. However, depending on the type of mask used, experiments have shown that vacancy-related substrate modification can be inferred tens of microns away from the edge of the mask used to define the implanted region. This could be due to fast diffusion of vacancies from the implanted area during annealing or to a geometric effect related to ion scattering around the mask edges. For quantum and single-atom devices, stray ion damage can be deleterious and must be minimized. In order to profile the distribution of implantation-induced damage, we have used the nitrogen-vacancy colour centre as a sensitive marker for vacancy concentration and distribution following MeV He ion implantation into diamond and annealing. Results show that helium atoms implanted through a mask clamped to the diamond surface are scattered underneath the mask to distances in the range of tens of micrometers from the mask edge. Implantation through a lithographically defined and deposited mask, with no spacing between the mask and the substrate, significantly reduces the scattering to <5 m but does not eliminate it. These scattering distances are much larger than the theoretically estimated vacancy diffusion distance of 260 nm under similar conditions. This paper shows that diffusion, upon annealing, of vacancies created by ion implantation in diamond is limited and the appearance of vacancies many tens of micrometers from the edge of the mask is due to scattering effects. △ Less

Submitted 25 August, 2016; originally announced August 2016.

Comments: 21 pages, 4 figures

Journal ref: Diamond and Related Materials 24, 6-10 (2012)

Complex refractive index variation in proton-damaged diamond

Authors: S. Lagomarsino, P. Olivero, S. Calusi, D. Gatto Monticone, L. Giuntini, M. Massi, S. Sciortino, A. Sytchkova, A. Sordini, M. Vannoni

Abstract: An accurate control of the optical properties of single crystal diamond during microfabrication processes such as ion implantation plays a crucial role in the engineering of integrated photonic devices. In this work we present a systematic study of the variation of both real and imaginary parts of the refractive index of single crystal diamond, when damaged with 2 and 3 MeV protons at low-medium f… ▽ More An accurate control of the optical properties of single crystal diamond during microfabrication processes such as ion implantation plays a crucial role in the engineering of integrated photonic devices. In this work we present a systematic study of the variation of both real and imaginary parts of the refractive index of single crystal diamond, when damaged with 2 and 3 MeV protons at low-medium fluences (range: 10^15 - 10^17 cm^-2). After implanting in 125x125 um^2 areas with a scanning ion microbeam, the variation of optical pathlength of the implanted regions was measured with laser interferometric microscopy, while their optical transmission was studied using a spectrometric set-up with micrometric spatial resolution. On the basis of a model taking into account the strongly non-uniform damage profile in the bulk sample, the variation of the complex refractive index as a function of damage density was evaluated. △ Less

Submitted 25 August, 2016; originally announced August 2016.

Comments: 13 pages, 7 figures. arXiv admin note: text overlap with arXiv:1608.07122

Journal ref: Optics Express 20 (17), 19382-19394 (2012)

A 3-dimensional interdigitated electrode geometry for the enhancement of charge collection efficiency in diamond detectors

Authors: J. Forneris, A. Lo Giudice, P. Olivero, F. Picollo, A. Re, M. Marinelli, F. Pompili, C. Verona, G. Verona Rinati, M. Benetti, D. Cannata, F. Di Pietrantonio

Abstract: In this work, a single crystal CVD diamond film with a novel three-dimensional (3D) interdigitated electrode geometry has been fabricated with the Reactive Ion Etching (RIE) technique in order to increase the charge collection efficiency (CCE) with respect to that obtained by standard superficial electrodes. The geometrical arrangement of the electric field lines due to the 3D patterning of the el… ▽ More In this work, a single crystal CVD diamond film with a novel three-dimensional (3D) interdigitated electrode geometry has been fabricated with the Reactive Ion Etching (RIE) technique in order to increase the charge collection efficiency (CCE) with respect to that obtained by standard superficial electrodes. The geometrical arrangement of the electric field lines due to the 3D patterning of the electrodes results in a shorter travel path for the excess charge carriers, thus contributing to a more efficient charge collection mech-anism. The CCE of the device was mapped by means of the Ion Beam Induced Charge (IBIC) technique. A 1 MeV proton micro-beam was raster scanned over the active area of the diamond detector under different bias voltage conditions, enabling to probe the charge transport properties of the detector up to a depth of 8 μm below the sample surface. The experimental results, supported by the numerical simulations, show a significant improvement in the 3D-detector performance (i.e. CCE, energy resolution, extension of the active area) if compared with the results obtained by standard surface metallic electrodes. △ Less

Submitted 25 August, 2016; originally announced August 2016.

Comments: 5 pages, 4 figures

Journal ref: Europhysics Letters 108, 18001 (2014)

Single-photon emitters based on NIR colour centres in diamond coupled with solid immersion lenses

Authors: D. Gatto Monticone, J. Forneris, M. Levi, A. Battiato, F. Picollo, P. Olivero, P. Traina, E. Moreva, E. Enrico, G. Brida, I. P. Degiovanni, M. Genovese, G. Amato, L. Boarino

Abstract: Single-photon sources represent a key enabling technology in quantum optics, and single colour centres in diamond are a promising platform to serve this purpose, due to their high quantum efficiency and photostability at room temperature. The widely studied nitrogen vacancy centres are characterized by several limitations, thus other defects have recently been considered, with a specific focus of… ▽ More Single-photon sources represent a key enabling technology in quantum optics, and single colour centres in diamond are a promising platform to serve this purpose, due to their high quantum efficiency and photostability at room temperature. The widely studied nitrogen vacancy centres are characterized by several limitations, thus other defects have recently been considered, with a specific focus of centres emitting in the Near Infra-Red. In the present work, we report on the coupling of native near-infrared-emitting centres in high-quality single crystal diamond with Solid Immersion Lens structures fabricated by Focused Ion Beam lithography. The reported improvements in terms of light collection efficiency make the proposed system an ideal platform for the development of single-photon emitters with appealing photophysical and spectral properties. △ Less

Submitted 25 August, 2016; originally announced August 2016.

Comments: 17 pages, 5 figures

Journal ref: International Journal of Quantum Information 12 (7-8), 1560011 (2014)

Kelvin probe characterization of buried graphitic microchannels in single-crystal diamond

Authors: E. Bernardi, A. Battiato, P. Olivero, F. Picollo, E. Vittone

Abstract: In this work, we present an investigation by Kelvin Probe Microscopy (KPM) of buried graphitic microchannels fabricated in single-crystal diamond by direct MeV ion microbeam writing. Metal deposition of variable-thickness masks was adopted to implant channels with emerging endpoints and high temperature annealing was performed in order to induce the graphitization of the highly-damaged buried regi… ▽ More In this work, we present an investigation by Kelvin Probe Microscopy (KPM) of buried graphitic microchannels fabricated in single-crystal diamond by direct MeV ion microbeam writing. Metal deposition of variable-thickness masks was adopted to implant channels with emerging endpoints and high temperature annealing was performed in order to induce the graphitization of the highly-damaged buried region. When an electrical current was flowing through the biased buried channel, the structure was clearly evidenced by KPM maps of the electrical potential of the surface region overlying the channel at increasing distances from the grounded electrode. The KPM profiling shows regions of opposite contrast located at different distances from the endpoints of the channel. This effect is attributed to the different electrical conduction properties of the surface and of the buried graphitic layer. The model adopted to interpret these KPM maps and profiles proved to be suitable for the electronic characterization of buried conductive channels, providing a non-invasive method to measure the local resistivity with a micrometer resolution. The results demonstrate the potential of the technique as a powerful diagnostic tool to monitor the functionality of all-carbon graphite/diamond devices to be fabricated by MeV ion beam lithography. △ Less

Submitted 25 August, 2016; originally announced August 2016.

Comments: 21 pages, 5 figures

Journal ref: Journal of Applied Physics 117, 024103 (2015)