-
AlN/Si interface engineering to mitigate RF losses in MOCVD grown GaN-on-Si substrates
Authors:
Pieter Cardinael,
Sachin Yadav,
Herwig Hahn,
Ming Zhao,
Sourish Banerjee,
Babak Kazemi Esfeh,
Christof Mauder,
Barry O Sullivan,
Uthayasankaran Peralagu,
Anurag Vohra,
Robert Langer,
Nadine Collaert,
Bertrand Parvais,
Jean-Pierre Raskin
Abstract:
Fabrication of low-RF loss GaN-on-Si HEMT stacks is critical to enable competitive front-end-modules for 5G and 6G applications. The main contribution to RF losses is the interface between the III-N layer and the HR Si wafer, more specifically the AlN/Si interface. At this interface, a parasitic surface conduction layer exists in Si, which decreases the substrate effective resistivity sensed by ov…
▽ More
Fabrication of low-RF loss GaN-on-Si HEMT stacks is critical to enable competitive front-end-modules for 5G and 6G applications. The main contribution to RF losses is the interface between the III-N layer and the HR Si wafer, more specifically the AlN/Si interface. At this interface, a parasitic surface conduction layer exists in Si, which decreases the substrate effective resistivity sensed by overlying circuitry below the nominal Si resistivity. However, a clear understanding of this interface with control of the parasitic channel is lacking. In this letter, a detailed physical and electrical description of MOCVD-grown AlN/Si structures is presented. The presence of a $\text{SiC}_\text{x}\text{N}_\text{y}$ interfacial layer is revealed and its importance for RF losses is shown. Through C-V and I-V characterisation, an increase in the C concentration of this interfacial layer is linked to the formation of negative charge at the AlN/Si interface, which counteracts the positive charge present in the 0-predose limit. The variation of TMAl predose is shown to allow precise tuning of the C composition and, consequently, the resulting interface charge. Notably, a linear relationship between predose and net interface charge is observed and confirmed by the fabrication of an AlN/Si sample with close to zero net charge. In addition, a higher $D_{it}$ ($\sim 2\times 10^{12}$ cm$^\text{-2}$) for such compensated samples is observed and can contribute to low RF loss. An exceptionally high effective resistivity of above 8 k$Ω\cdot$cm is achieved, corresponding to an RF loss below 0.3 dB/mm at 10 GHz.
△ Less
Submitted 13 August, 2024; v1 submitted 3 April, 2024;
originally announced April 2024.
-
Generalized Boltzmann relations in semiconductors including band tails
Authors:
Arnout Beckers,
Dominique Beckers,
Farzan Jazaeri,
Bertrand Parvais,
Christian Enz
Abstract:
Boltzmann relations are widely used in semiconductor physics to express the charge-carrier densities as a function of the Fermi level and temperature. However, these simple exponential relations only apply to sharp band edges of the conduction and valence bands. In this article, we present a generalization of the Boltzmann relations accounting for exponential band tails. To this end, the required…
▽ More
Boltzmann relations are widely used in semiconductor physics to express the charge-carrier densities as a function of the Fermi level and temperature. However, these simple exponential relations only apply to sharp band edges of the conduction and valence bands. In this article, we present a generalization of the Boltzmann relations accounting for exponential band tails. To this end, the required Fermi-Dirac integral is first recast as a Gauss hypergeometric function, followed by a suitable transformation of that special function, and a zeroth-order series expansion using the hypergeometric series. This results in simple relations for the electron and hole densities that each involve two exponentials. One exponential depends on the temperature and the other one on the band-tail parameter. The proposed relations tend to the Boltzmann relations if the band-tail parameters tend to zero. This work comes timely for the modeling of classical semiconductor devices at cryogenic temperatures for large-scale quantum computing.
△ Less
Submitted 24 September, 2023;
originally announced September 2023.
-
Physics-Based and Closed-Form Model for Cryo-CMOS Subthreshold Swing
Authors:
Arnout Beckers,
Jakob Michl,
Alexander Grill,
Ben Kaczer,
Marie Garcia Bardon,
Bertrand Parvais,
Bogdan Govoreanu,
Kristiaan De Greve,
Gaspard Hiblot,
Geert Hellings
Abstract:
Cryogenic semiconductor device models are essential in designing control systems for quantum devices and in benchmarking the benefits of cryogenic cooling for high-performance computing. In particular, the saturation of subthreshold swing due to band tails is an important phenomenon to include in low-temperature analytical MOSFET models as it predicts theoretical lower bounds on the leakage power…
▽ More
Cryogenic semiconductor device models are essential in designing control systems for quantum devices and in benchmarking the benefits of cryogenic cooling for high-performance computing. In particular, the saturation of subthreshold swing due to band tails is an important phenomenon to include in low-temperature analytical MOSFET models as it predicts theoretical lower bounds on the leakage power and supply voltage in tailored cryogenic CMOS technologies with tuned threshold voltages. Previous physics-based modeling required to evaluate functions with no closed-form solutions, defeating the purpose of fast and efficient model evaluation. Thus far, only the empirically proposed expressions are in closed form. This article bridges this gap by deriving a physics-based and closed-form model for the full saturating trend of the subthreshold swing from room down to low temperature. The proposed model is compared against experimental data taken on some long and short devices from a commercial 28-nm bulk CMOS technology down to 4.2 K.
△ Less
Submitted 24 September, 2023; v1 submitted 22 December, 2022;
originally announced December 2022.
