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Single-photon Emission from an Acoustically-driven Lateral Light-emitting Diode
Authors:
Tzu-Kan Hsiao,
Antonio Rubino,
Yousun Chung,
Seok-Kyun Son,
Hangtian Hou,
Jorge Pedrós,
Ateeq Nasir,
Gabriel Éthier-Majcher,
Megan J. Stanley,
Richard T. Phillips,
Thomas A. Mitchell,
Jonathan P. Griffiths,
Ian Farrer,
David A. Ritchie,
Christopher J. B. Ford
Abstract:
Single-photon sources are essential building blocks in quantum photonic networks, where quantum-mechanical properties of photons are utilised to achieve quantum technologies such as quantum cryptography and quantum computing. Most conventional solid-state single-photon sources are based on single emitters such as self-assembled quantum dots, which are created at random locations and require spectr…
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Single-photon sources are essential building blocks in quantum photonic networks, where quantum-mechanical properties of photons are utilised to achieve quantum technologies such as quantum cryptography and quantum computing. Most conventional solid-state single-photon sources are based on single emitters such as self-assembled quantum dots, which are created at random locations and require spectral filtering. These issues hinder the integration of a single-photon source into a scaleable photonic quantum network for applications such as on-chip photonic quantum processors. In this work, using only regular lithography techniques on a conventional GaAs quantum well, we realise an electrically triggered single-photon source with a GHz repetition rate and without the need for spectral filtering. In this device, a single electron is carried in the potential minimum of a surface acoustic wave (SAW) and is transported to a region of holes to form an exciton. The exciton then decays and creates a single photon in a lifetime of ~ 100ps. This SAW-driven electroluminescence (EL) yields photon antibunching with $g^{(2)}(0) = 0.39 \pm 0.05$, which satisfies the common criterion for a single-photon source $g^{(2)}(0) < 0.5$. Furthermore, we estimate that if a photon detector receives a SAW-driven EL signal within one SAW period, this signal has a 79%-90% chance of being a single photon. This work shows that a single-photon source can be made by combining single-electron transport and a lateral n-i-p junction. This approach makes it possible to create multiple synchronised single-photon sources at chosen positions with photon energy determined by quantum-well thickness. Compared with conventional quantum-dot-based single-photon sources, this device may be more suitable for an on-chip integrated photonic quantum network.
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Submitted 10 January, 2019;
originally announced January 2019.
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Exciton Footprint of Self-assembled AlGaAs Quantum Dots in Core-Shell Nanowires
Authors:
Yannik Fontana,
Pierre Corfdir,
Barbara Van Hattem,
Eleonora Russo-Averchi,
Martin Heiss,
Samuel Sonderegger,
Cesar Magen,
Jordi Arbiol,
Richard T. Phillips,
Anna Fontcuberta i Morral
Abstract:
Quantum-dot-in-nanowire systems constitute building blocks for advanced photonics and sensing applications. The electronic symmetry of the emitters impacts their function capabilities. Here, we study the fine structure of gallium-rich quantum dots nested in the shell of GaAs-AlGaAs core-shell nanowires. We used optical spectroscopy to resolve the splitting resulting from the exchange terms and ext…
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Quantum-dot-in-nanowire systems constitute building blocks for advanced photonics and sensing applications. The electronic symmetry of the emitters impacts their function capabilities. Here, we study the fine structure of gallium-rich quantum dots nested in the shell of GaAs-AlGaAs core-shell nanowires. We used optical spectroscopy to resolve the splitting resulting from the exchange terms and extract the main parameters of the emitters. Our results indicate that the quantum dots can host neutral as well as charges excitonic complexes and that the excitons exhibit a slightly elongated footprint, with the main axis tilted with respect to the growth axis. GaAs-AlGaAs emitters in a nanowire are particularly promising for overcoming the limitations set by strain in other systems, with the benefit of being integrated in a versatile photonic structure.
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Submitted 23 July, 2014; v1 submitted 1 June, 2014;
originally announced June 2014.
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From the artificial atom to the Kondo-Anderson model: orientation dependent magneto-photoluminescence of charged excitons in InAs quantum dots
Authors:
B. Van Hattem,
P. Corfdir,
P. Brereton,
P. Pearce,
A. M. Graham,
M. J. Stanley,
M. Hugues,
M. Hopkinson,
R. T. Phillips
Abstract:
We present a magneto-photoluminescence study on neutral and charged excitons confined to InAs/GaAs quantum dots. Our investigation relies on a confocal microscope that allows arbitrary tuning of the angle between the applied magnetic field and the sample growth axis. First, from experiments on neutral excitons and trions, we extract the in-plane and on-axis components of the Landé tensor for elect…
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We present a magneto-photoluminescence study on neutral and charged excitons confined to InAs/GaAs quantum dots. Our investigation relies on a confocal microscope that allows arbitrary tuning of the angle between the applied magnetic field and the sample growth axis. First, from experiments on neutral excitons and trions, we extract the in-plane and on-axis components of the Landé tensor for electrons and holes in the s-shell. Then, based on the doubly negatively charged exciton magneto-photoluminescence we show that the p-electron wave function spreads significantly into the GaAs barriers. We also demonstrate that the p-electron g-factor depends on the presence of a hole in the s-shell. The magnetic field dependence of triply negatively charged excitons photoluminescence exhibits several anticrossings, as a result of coupling between the quantum dot electronic states and the wetting layer. Finally, we discuss how the system evolves from a Kondo-Anderson exciton description to the artificial atom model when the orientation of the magnetic field goes from Faraday to Voigt geometry.
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Submitted 24 May, 2013; v1 submitted 26 February, 2013;
originally announced February 2013.
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Creation of entangled states in coupled quantum dots via adiabatic rapid passage
Authors:
Celestino Creatore,
Richard T. Brierley,
Richard T. Phillips,
Peter B. Littlewood,
Paul R. Eastham
Abstract:
Quantum state preparation through external control is fundamental to established methods in quantum information processing and in studies of dynamics. In this respect, excitons in semiconductor quantum dots (QDs) are of particular interest since their coupling to light allows them to be driven into a specified state using the coherent interaction with a tuned optical field such as an external lase…
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Quantum state preparation through external control is fundamental to established methods in quantum information processing and in studies of dynamics. In this respect, excitons in semiconductor quantum dots (QDs) are of particular interest since their coupling to light allows them to be driven into a specified state using the coherent interaction with a tuned optical field such as an external laser pulse. We propose a protocol, based on adiabatic rapid passage, for the creation of entangled states in an ensemble of pairwise coupled two-level systems, such as an ensemble of QD molecules. We show by quantitative analysis using realistic parameters for semiconductor QDs that this method is feasible where other approaches are unavailable. Furthermore, this scheme can be generically transferred to some other physical systems including circuit QED, nuclear and electron spins in solid-state environments, and photonic coupled cavities.
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Submitted 5 April, 2012; v1 submitted 27 December, 2011;
originally announced December 2011.
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Microcavity quantum-dot systems for non-equilibrium Bose-Einstein condensation
Authors:
I. M. Piper,
P. R. Eastham,
M. Ediger,
A. M. Wilson,
Y. Wu,
M. Hugues,
M. Hopkinson,
R. T. Phillips
Abstract:
We review the practical conditions required to achieve a non-equilibrium BEC driven by quantum dynamics in a system comprising a microcavity field mode and a distribution of localised two-level systems driven to a step-like population inversion profile. A candidate system based on eight 3.8nm layers of In(0.23)Ga(0.77)As in GaAs shows promising characteristics with regard to the total dipole stren…
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We review the practical conditions required to achieve a non-equilibrium BEC driven by quantum dynamics in a system comprising a microcavity field mode and a distribution of localised two-level systems driven to a step-like population inversion profile. A candidate system based on eight 3.8nm layers of In(0.23)Ga(0.77)As in GaAs shows promising characteristics with regard to the total dipole strength which can be coupled to the field mode.
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Submitted 7 July, 2010;
originally announced July 2010.
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Quantum state preparation in semiconductor dots by adiabatic rapid passage
Authors:
Yanwen Wu,
I. M. Piper,
M. Ediger,
P. Brereton,
E. R. Schmidgall,
M. Hugues,
M. Hopkinson,
R. T. Phillips
Abstract:
Preparation of a specific quantum state is a required step for a variety of proposed practical uses of quantum dynamics. We report an experimental demonstration of optical quantum state preparation in a semiconductor quantum dot with electrical readout, which contrasts with earlier work based on Rabi flopping in that the method is robust with respect to variation in the optical coupling. We use ad…
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Preparation of a specific quantum state is a required step for a variety of proposed practical uses of quantum dynamics. We report an experimental demonstration of optical quantum state preparation in a semiconductor quantum dot with electrical readout, which contrasts with earlier work based on Rabi flopping in that the method is robust with respect to variation in the optical coupling. We use adiabatic rapid passage, which is capable of inverting single dots to a specified upper level. We demonstrate that when the pulse power exceeds a threshold for inversion, the final state is independent of power. This provides a new tool for preparing quantum states in semiconductor dots and has a wide range of potential uses.
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Submitted 9 June, 2010; v1 submitted 4 June, 2010;
originally announced June 2010.
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Absence of the Rashba effect in undoped asymmetric quantum wells
Authors:
P. S. Eldridge,
W. J. H Leyland,
J. D. Mar,
P. G. Lagoudakis,
R. Winkler,
O. Z. Karimov,
M. Henini,
D Taylor,
R. T. Phillips,
R T Harley
Abstract:
To an electron moving in free space an electric field appears as a magnetic field which interacts with and can reorient the electron spin. In semiconductor quantum wells this spin-orbit interaction seems to offer the possibility of gate-voltage control in spintronic devices but, as the electrons are subject to both ion-core and macroscopic structural potentials, this over-simple picture has lead…
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To an electron moving in free space an electric field appears as a magnetic field which interacts with and can reorient the electron spin. In semiconductor quantum wells this spin-orbit interaction seems to offer the possibility of gate-voltage control in spintronic devices but, as the electrons are subject to both ion-core and macroscopic structural potentials, this over-simple picture has lead to intense debate. For example, an externally applied field acting on the envelope of the electron wavefunction determined by the macroscopic potential, underestimates the experimentally observed spin-orbit field by many orders of magnitude while the Ehrenfest theorem suggests that it should actually be zero. Here we challenge, both experimentally and theoretically, the widely held belief that any inversion asymmetry of the macroscopic potential, not only electric field, will produce a significant spin-orbit field for electrons. This conclusion has far-reaching consequences for the design of spintronic devices while illuminating important fundamental physics.
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Submitted 30 July, 2008;
originally announced July 2008.
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Quantum condensation from a tailored exciton population in a microcavity
Authors:
P. R. Eastham,
R. T. Phillips
Abstract:
An experiment is proposed, on the coherent quantum dynamics of a semiconductor microcavity containing quantum dots. Modeling the experiment using a generalized Dicke model, we show that a tailored excitation pulse can create an energy-dependent population of excitons, which subsequently evolves to a quantum condensate of excitons and photons. The population is created by a generalization of adia…
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An experiment is proposed, on the coherent quantum dynamics of a semiconductor microcavity containing quantum dots. Modeling the experiment using a generalized Dicke model, we show that a tailored excitation pulse can create an energy-dependent population of excitons, which subsequently evolves to a quantum condensate of excitons and photons. The population is created by a generalization of adiabatic rapid passage, and then condenses due to a dynamical analog of the BCS instability.
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Submitted 28 July, 2008; v1 submitted 15 August, 2007;
originally announced August 2007.
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Temperature Dependence of Rashba Spin-orbit Coupling in Quantum Wells
Authors:
P. S. Eldridge,
W. J. H. Leyland,
P. G. Lagoudakis,
O. Z. Karimov,
M. Henini,
D. Taylor,
R. T. Phillips,
R. T. Harley
Abstract:
We perform an all-optical spin-dynamic measurement of the Rashba spin-orbit interaction in (110)-oriented GaAs/AlGaAs quantum wells. The crystallographic direction of quantum confinement allows us to disentangle the contributions to spin-orbit coupling from the structural inversion asymmetry (Rashba term) and the bulk inversion asymmetry. We observe an unexpected temperature dependence of the Ra…
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We perform an all-optical spin-dynamic measurement of the Rashba spin-orbit interaction in (110)-oriented GaAs/AlGaAs quantum wells. The crystallographic direction of quantum confinement allows us to disentangle the contributions to spin-orbit coupling from the structural inversion asymmetry (Rashba term) and the bulk inversion asymmetry. We observe an unexpected temperature dependence of the Rashba spin-orbit interaction strength that signifies the importance of the usually neglected higher-order terms of the Rashba coupling.
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Submitted 30 July, 2007;
originally announced July 2007.
