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Effects of Vanadium Doping on the Optical Response and Electronic Structure of WS$_{2}$ Monolayers
Authors:
Frederico B. Sousa,
Boyang Zheng,
Mingzu Liu,
Geovani C. Resende,
Da Zhou,
Marcos A. Pimenta,
Mauricio Terrones,
Vincent H. Crespi,
Leandro M. Malard
Abstract:
Two-dimensional dilute magnetic semiconductors has been recently reported in semiconducting transition metal dichalcogenides by the introduction of spin-polarized transition metal atoms as dopants. This is the case of vanadium-doped WS$_2$ and WSe$_2$ monolayers, which exhibits a ferromagnetic ordering even above room temperature. However, a broadband characterization of their electronic band stru…
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Two-dimensional dilute magnetic semiconductors has been recently reported in semiconducting transition metal dichalcogenides by the introduction of spin-polarized transition metal atoms as dopants. This is the case of vanadium-doped WS$_2$ and WSe$_2$ monolayers, which exhibits a ferromagnetic ordering even above room temperature. However, a broadband characterization of their electronic band structure and its dependence on vanadium concentration is still lacking. Therefore, here we perform power-dependent photoluminescence, resonant four-wave mixing, and differential reflectance spectroscopy to study the optical transitions close to the A exciton energy of vanadium-doped WS$_2$ monolayers with distinct concentrations. Instead of a single A exciton peak, vanadium-doped samples exhibit two photoluminescence peaks associated with transitions to occupied and unoccupied bands. Moreover, resonant Raman spectroscopy and resonant second-harmonic generation measurements revealed a blueshift in the B exciton but no energy change in the C exciton as vanadium is introduced in the monolayers. Density functional theory calculations showed that the band structure is sensitive to the Hubbard \(U\) correction for vanadium and several scenarios are proposed to explain the two photoluminescence peaks around the A exciton energy region. Our work provides the first broadband optical characterization of these two-dimensional dilute magnetic semiconductors, shedding light on the novel electronic features of WS$_{2}$ monolayers which are tunable by the vanadium concentration.
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Submitted 17 January, 2024;
originally announced January 2024.
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Visible Out-of-plane Polarized Luminescence and Electronic Resonance from Black Phosphorus
Authors:
L. Schué,
F. A. Goudreault,
A. Righi,
G. C. Resende,
V. Lefebvre,
E. Godbout,
M. A. Pimenta,
M. Côté,
S. Francoeur,
R. Martel
Abstract:
Black Phosphorus (BP) is unique among layered materials owing to its homonuclear lattice and strong structural anisotropy. While recent investigations on few layers BP have extensively explored the in-plane (a,c) anisotropy, much less attention has been given to the out-of-plane direction (b). Here, the optical response from bulk BP is probed using polarization-resolved photoluminescence (PL), pho…
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Black Phosphorus (BP) is unique among layered materials owing to its homonuclear lattice and strong structural anisotropy. While recent investigations on few layers BP have extensively explored the in-plane (a,c) anisotropy, much less attention has been given to the out-of-plane direction (b). Here, the optical response from bulk BP is probed using polarization-resolved photoluminescence (PL), photoluminescence excitation (PLE) and resonant Raman scattering along the zigzag, out-of-plane, and armchair directions. PL reveals an unexpected b-polarized emission occurring in the visible at 1.75 eV, far above the fundamental gap (0.3 eV). PLE indicates that this emission is generated through b-polarized excitation at 2.3 eV. The same electronic resonance is observed in resonant Raman scans, where the scattering efficiency of both Ag phonon modes is enhanced. These experimental results are fully consistent with DFT calculations of the permittivity tensor elements and demonstrate the remarkable extent to which the anisotropy influences the optical properties and carrier dynamics in black phosphorus.
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Submitted 23 December, 2021;
originally announced December 2021.
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Multiple-excitation study of the double-resonance Raman bands in rhombohedral graphite
Authors:
Sergio L. L. M. Ramos,
Marcos A. Pimenta,
Ana Champi
Abstract:
The double-resonance (DR) Raman process is a signature of all sp2 carbon material and provide fundamental information of the electronic structure and phonon dispersion in graphene, carbon nanotubes and different graphite-type materials. We have performed in this work the study of different DR Raman bands of rhombohedral graphite using five different excitation laser energies and obtained the dispe…
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The double-resonance (DR) Raman process is a signature of all sp2 carbon material and provide fundamental information of the electronic structure and phonon dispersion in graphene, carbon nanotubes and different graphite-type materials. We have performed in this work the study of different DR Raman bands of rhombohedral graphite using five different excitation laser energies and obtained the dispersion of the different DR features by changing the laser energy. Results are compared with those of Bernal graphite and shows that rhombohedral graphite exhibit a richer DR Raman spectrum. For example, the 2D band of rhombohedral graphite is broader and composed by several maxima that exhibit different dispersive behavior. The occurrence of more DR conditions in rhombohedral graphite is ascribed to the fact that the volume of its Brillouin zone (BZ) is twice the volume of the Bernal BZ, allowing thus more channels for the resonance condition. The spectra of the intervalley TO-LA band of rhombohedral graphite, around 2450 cm-1, is also broader and richer in features compared to that of Bernal graphite. Results and analysis of the spectral region 1700-1850 cm-1, where different intravalley processes involving acoustic and optical phonons occurs, are also presented.
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Submitted 23 October, 2020;
originally announced October 2020.
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Nonlinear dark-field imaging of 1D defects in monolayer dichalcogenides
Authors:
Bruno R. Carvalho,
Yuanxi Wang,
Kazunori Fujisawa,
Tianyi Zhang,
Ethan Kahn,
Ismail Bilgin,
Pulickel M. Ajayan,
Ana M. de Paula,
Marcos A. Pimenta,
Swastik Kar,
Vincent H. Crespi,
Mauricio Terrones,
Leandro M. Malard
Abstract:
Extended defects with one dimensionality smaller than that of the host, such as 2D grain boundaries in 3D materials or 1D grain boundaries in 2D materials, can be particularly damaging since they directly impede the transport of charge, spin or heat, and can introduce a metallic character into otherwise semiconducting systems. Unfortunately, a technique to rapidly and non-destructively image 1D de…
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Extended defects with one dimensionality smaller than that of the host, such as 2D grain boundaries in 3D materials or 1D grain boundaries in 2D materials, can be particularly damaging since they directly impede the transport of charge, spin or heat, and can introduce a metallic character into otherwise semiconducting systems. Unfortunately, a technique to rapidly and non-destructively image 1D defects in 2D materials is lacking. Scanning transmission electron microscopy (STEM), Raman, photoluminescence and nonlinear optical spectroscopies, are all extremely valuable, but current implementations suffer from low throughput and a destructive nature (STEM) or limitations in their unambiguous sensitivity at the nanoscale. Here we demonstrate that dark-field second harmonic generation (SHG) microscopy can rapidly, efficiently, and non-destructively probe grain boundaries and edges in monolayer dichalcogenides (i.e. MoSe2, MoS2 and WS2). Dark-field SHG efficiently separates the spatial components of the emitted light and exploits interference effects from crystal domains of different orientations to localize grain boundaries and edges as very bright 1D patterns through a Cerenkov-type SHG emission. The frequency dependence of this emission in MoSe2 monolayers is explained in terms of plasmon-enhanced SHG related to the defects metallic character. This new technique for nanometer-scale imaging of the grain structure, domain orientation and localized 1D plasmons in 2D different semiconductors, thus enables more rapid progress towards both applications and fundamental materials discoveries.
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Submitted 12 March, 2019;
originally announced March 2019.
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Interplay between organic cations and inorganic framework and incommensurability in hybrid lead-halide perovskite CH3NH3PbBr3
Authors:
Yinsheng Guo,
Omer Yaffe,
Daniel W. Paley,
Alexander N. Beecher,
Trevor D. Hull,
Guilherme Szpak,
Jonathan S. Owen,
Louis E. Brus,
Marcos A. Pimenta
Abstract:
Organic-inorganic coupling in the hybrid lead-halide perovskite is a central issue in rationalizing the outstanding photovoltaic performance of these emerging materials. Here we compare and contrast the evolution of structure and dynamics of the hybrid CH3NH3PbBr3 and the inorganic CsPbBr3 lead-halide perovskites with temperature, using Raman spectroscopy and single-crystal X-ray diffraction. Resu…
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Organic-inorganic coupling in the hybrid lead-halide perovskite is a central issue in rationalizing the outstanding photovoltaic performance of these emerging materials. Here we compare and contrast the evolution of structure and dynamics of the hybrid CH3NH3PbBr3 and the inorganic CsPbBr3 lead-halide perovskites with temperature, using Raman spectroscopy and single-crystal X-ray diffraction. Results reveal a stark contrast between their order-disorder transitions, abrupt for the hybrid whereas smooth for the inorganic perovskite. X-ray diffraction observes an intermediate incommensurate phase between the ordered and the disordered phases in CH3NH3PbBr3. Low-frequency Raman scattering captures the appearance of a sharp soft mode in the incommensurate phase, ascribed to the theoretically predicted amplitudon mode. Our work highlights the interaction between the structural dynamics of organic cation CH3NH3+ and the lead-halide framework, and unravels the competition between tendencies of the organic and inorganic moieties to minimize energy in the incommensurate phase of the hybrid perovskite structure.
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Submitted 29 August, 2017; v1 submitted 30 May, 2017;
originally announced May 2017.
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Achieving Large, Tunable Strain in Monolayer Transition-Metal Dichalcogenides
Authors:
Abdollah,
M. Dadgar,
Declan Scullion,
Kyungnam Kang,
Daniel Esposito,
Eui-Hyoek Yang,
Irving P. Herman,
Marcos A. Pimenta,
Elton-J. G. Santos,
Abhay N. Pasupathy
Abstract:
We describe a facile technique based on polymer encapsulation to apply several percent controllable strains to monolayer and few-layer Transition Metal Dichalcogenides (TMDs). We use this technique to study the lattice response to strain via polarized Raman spectroscopy in monolayer WSe2 and WS2. The application of strain causes mode-dependent redshifts, with larger shift rates observed for in-pla…
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We describe a facile technique based on polymer encapsulation to apply several percent controllable strains to monolayer and few-layer Transition Metal Dichalcogenides (TMDs). We use this technique to study the lattice response to strain via polarized Raman spectroscopy in monolayer WSe2 and WS2. The application of strain causes mode-dependent redshifts, with larger shift rates observed for in-plane modes. We observe a splitting of the degeneracy of the in-plane E' modes in both materials and measure the Gruneisen parameters. At large strain, we observe that the reduction of crystal symmetry can lead to a change in the polarization response of the A' mode in WS2. While both WSe2 and WS2 exhibit similar qualitative changes in the phonon structure with strain, we observe much larger changes in mode positions and intensities with strain in WS2. These differences can be explained simply by the degree of iconicity of the metal-chalcogen bond.
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Submitted 15 May, 2017;
originally announced May 2017.
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Edge phonons in black phosphorus
Authors:
H. B. Ribeiro,
C. E. P. Villegas,
D. A. Bahamon,
D. Muraca,
A. H. Castro Neto,
E. A. T. de Souza,
A. R. Rocha,
M. A. Pimenta,
C. J. S. de Matos
Abstract:
Exfoliated black phosphorus has recently emerged as a new two-dimensional crystal that, due to its peculiar and anisotropic crystalline and electronic band structures, may have potentially important applications in electronics, optoelectronics and photonics. Despite the fact that the edges of layered crystals host a range of singular properties whose characterization and exploitation are of utmost…
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Exfoliated black phosphorus has recently emerged as a new two-dimensional crystal that, due to its peculiar and anisotropic crystalline and electronic band structures, may have potentially important applications in electronics, optoelectronics and photonics. Despite the fact that the edges of layered crystals host a range of singular properties whose characterization and exploitation are of utmost importance for device development, the edges of black phosphorus remain poorly characterized. In this work, the atomic structure and the behavior of phonons near different black phosphorus edges are experimentally and theoretically studied using Raman spectroscopy and density functional theory calculations. Polarized Raman results show the appearance of new modes at the edges of the sample, and their spectra depend on the atomic structure of the edges (zigzag or armchair). Theoretical simulations confirm that the new modes are due to edge phonon states that are forbidden in the bulk, and originated from the lattice termination rearrangements.
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Submitted 29 April, 2016;
originally announced May 2016.
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Local polar fluctuations in lead halide perovskite crystals
Authors:
Omer Yaffe,
Yinsheng Guo,
Liang Z. Tan,
David A. Egger,
Trevor Hull,
Constantinos C. Stoumpos,
Fan Zheng,
Tony F. Heinz,
Leeor Kronik,
Mercouri G. Kanatzidis,
Jonathan S Owen,
Andrew M. Rappe,
Marcos A. Pimenta,
Louis E. Brus
Abstract:
Hybrid lead-halide perovskites have emerged as an excellent class of photovoltaic materials. Recent reports suggest that the organic molecular cation is responsible for local polar fluctuations that inhibit carrier recombination. We combine low frequency Raman scattering with first-principles molecular dynamics (MD) to study the fundamental nature of these local polar fluctuations. Our observation…
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Hybrid lead-halide perovskites have emerged as an excellent class of photovoltaic materials. Recent reports suggest that the organic molecular cation is responsible for local polar fluctuations that inhibit carrier recombination. We combine low frequency Raman scattering with first-principles molecular dynamics (MD) to study the fundamental nature of these local polar fluctuations. Our observations of a strong central peak in both hybrid (CH$_3$NH$_3$PbBr$_3$) and all-inorganic (CsPbBr$_3$) lead-halide perovskites show that anharmonic, local polar fluctuations are intrinsic to the general lead-halide perovskite structure, and not unique to the dipolar organic cation. MD simulations show that head-to-head Cs motion coupled to Br face expansion, on a few hundred femtosecond time scale, drives the local polar fluctuations in CsPbBr$_3$.
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Submitted 10 February, 2017; v1 submitted 27 April, 2016;
originally announced April 2016.
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Characterizing top gated bilayer graphene interaction with its environment by Raman spectroscopy
Authors:
D. L. Mafra,
P. Gava,
L. M. Malard,
R. S. Borges,
G. G. Silva,
J. A. Leon,
F. Plentz,
F. Mauri,
M. A. Pimenta
Abstract:
In this work we study the behavior of the optical phonon modes in bilayer graphene devices by applying top gate voltage, using Raman scattering. We observe the splitting of the Raman G band as we tune the Fermi level of the sample, which is explained in terms of mixing of the Raman (Eg) and infrared (Eu) phonon modes, due to different doping in the two layers. We theoretically analyze our data in…
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In this work we study the behavior of the optical phonon modes in bilayer graphene devices by applying top gate voltage, using Raman scattering. We observe the splitting of the Raman G band as we tune the Fermi level of the sample, which is explained in terms of mixing of the Raman (Eg) and infrared (Eu) phonon modes, due to different doping in the two layers. We theoretically analyze our data in terms of the bilayer graphene phonon self-energy which includes non-homogeneous charge carrier doping between the graphene layers. We show that the comparison between the experiment and theoretical model not only gives information about the total charge concentration in the bilayer graphene device, but also allows to separately quantify the amount of unintentional charge coming from the top and the bottom of the system, and therefore to characterize the interaction of bilayer graphene with its surrounding environment.
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Submitted 19 April, 2011;
originally announced April 2011.
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On the inner Double-Resonance Raman scattering process in bilayer graphene
Authors:
D. L. Mafra,
E. A. Moujaes,
R. W. Nunes,
M. A. Pimenta
Abstract:
The dispersion of phonons and the electronic structure of graphene systems can be obtained experimentally from the double-resonance (DR) Raman features by varying the excitation laser energy. In a previous resonance Raman investigation of graphene, the electronic structure was analyzed in the framework of the Slonczewski-Weiss-McClure (SWM) model, considering the outer DR process. In this work we…
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The dispersion of phonons and the electronic structure of graphene systems can be obtained experimentally from the double-resonance (DR) Raman features by varying the excitation laser energy. In a previous resonance Raman investigation of graphene, the electronic structure was analyzed in the framework of the Slonczewski-Weiss-McClure (SWM) model, considering the outer DR process. In this work we analyze the data considering the inner DR process, and obtain SWM parameters that are in better agreement with those obtained from other experimental techniques. This result possibly shows that there is still a fundamental open question concerning the double resonance process in graphene systems.
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Submitted 2 August, 2010;
originally announced August 2010.
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Observation of the Kohn anomaly near the K point of bilayer graphene
Authors:
D. L. Mafra,
L. M. Malard,
S. K. Doorn,
H. Htoon,
J. Nilsson,
A. H. Castro Neto,
M. A. Pimenta
Abstract:
The dispersion of electrons and phonons near the K point of bilayer graphene was investigated in a resonant Raman study using different laser excitation energies in the near infrared and visible range. The electronic structure was analyzed within the tight-binding approximation, and the Slonczewski-Weiss-McClure (SWM) parameters were obtained from the analysis of the dispersive behavior of the R…
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The dispersion of electrons and phonons near the K point of bilayer graphene was investigated in a resonant Raman study using different laser excitation energies in the near infrared and visible range. The electronic structure was analyzed within the tight-binding approximation, and the Slonczewski-Weiss-McClure (SWM) parameters were obtained from the analysis of the dispersive behavior of the Raman features. A softening of the phonon branches was observed near the K point, and results evidence the Kohn anomaly and the importance of considering electron-phonon and electron-electron interactions to correctly describe the phonon dispersion in graphene systems.
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Submitted 19 July, 2009;
originally announced July 2009.
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Observation of Distinct Electron-Phonon Couplings in Gated Bilayer Graphene
Authors:
L. M. Malard,
D. C. Elias,
E. S. Alves,
M. A. Pimenta
Abstract:
A Raman study of a back gated bilayer graphene sample is presented. The changes in the Fermi level induced by charge transfer splits the Raman G-band, hardening its higher component and softening the lower one. These two components are associated with the symmetric (S) and anti-symmetric vibration (AS) of the atoms in the two layers, the later one becoming Raman active due to inversion symmetry…
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A Raman study of a back gated bilayer graphene sample is presented. The changes in the Fermi level induced by charge transfer splits the Raman G-band, hardening its higher component and softening the lower one. These two components are associated with the symmetric (S) and anti-symmetric vibration (AS) of the atoms in the two layers, the later one becoming Raman active due to inversion symmetry breaking. The phonon hardening and softening are explained by considering the selective coupling of the S and AS phonons with interband and intraband electron-hole pairs.
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Submitted 18 August, 2008;
originally announced August 2008.
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Probing the Electronic Structure of Bilayer Graphene by Raman Scattering
Authors:
L. M. Malard,
J. Nilsson,
D. C. Elias,
J. C. Brant,
F. Plentz,
E. S. Alves,
A. H. Castro Neto,
M. A. Pimenta
Abstract:
The electronic structure of bilayer graphene is investigated from a resonant Raman study using different laser excitation energies. The values of the parameters of the Slonczewski-Weiss-McClure model for graphite are measured experimentally and some of them differ significantly from those reported previously for graphite, specially that associated with the difference of the effective mass of ele…
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The electronic structure of bilayer graphene is investigated from a resonant Raman study using different laser excitation energies. The values of the parameters of the Slonczewski-Weiss-McClure model for graphite are measured experimentally and some of them differ significantly from those reported previously for graphite, specially that associated with the difference of the effective mass of electrons and holes. The splitting of the two TO phonon branches in bilayer graphene is also obtained from the experimental data. Our results have implications for bilayer graphene electronic devices.
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Submitted 9 August, 2007;
originally announced August 2007.
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Direct Experimental Evidence of Exciton-Phonon Bound States in Carbon Nanotubes
Authors:
Flavio Plentz,
Henrique B. Ribeiro,
Ado Jorio,
Marcos A. Pimenta,
Michael S. Strano
Abstract:
We present direct experimental observation of exciton-phonon bound states in the photoluminescence excitation spectra of isolated single walled carbon nanotubes in aqueous suspension. The photoluminescence excitation spectra from several distinct single-walled carbon nanotubes show the presence of at least one sideband related to the tangential modes, lying {200 meV} above the main absorption/em…
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We present direct experimental observation of exciton-phonon bound states in the photoluminescence excitation spectra of isolated single walled carbon nanotubes in aqueous suspension. The photoluminescence excitation spectra from several distinct single-walled carbon nanotubes show the presence of at least one sideband related to the tangential modes, lying {200 meV} above the main absorption/emission peak. Both the energy position and line shapes of the sidebands are in excellent agreement with recent calculations [PRL {\bf 94},027402 (2005)] that predict the existence of exciton-phonon bound states, a sizable spectral weight transfer to these exciton-phonon complexes and that the amount of this transfer depends on the specific nanotube structure and diameter. The observation of these novel exciton-phonon complexes is a strong indication that the optical properties of carbon nanotubes have an excitonic nature and also of the central role played by phonons in describing the excitation and recombination mechanisms in carbon nanotubes.
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Submitted 5 July, 2005;
originally announced July 2005.
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Percolation model for structural phase transitions in Li$_{1-x}$H$_x$IO$_3$ mixed crystals
Authors:
P. H. L. Martins,
J. A. Plascak,
M. A. Pimenta
Abstract:
A percolation model is proposed to explain the structural phase transitions found in Li$_{1-x}$H$_x$IO$_3$ mixed crystals as a function of the concentration parameter $x$. The percolation thresholds are obtained from Monte Carlo simulations on the specific lattices occupied by lithium atoms and hydrogen bonds. The theoretical results strongly suggest that percolating lithium vacancies and hydrog…
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A percolation model is proposed to explain the structural phase transitions found in Li$_{1-x}$H$_x$IO$_3$ mixed crystals as a function of the concentration parameter $x$. The percolation thresholds are obtained from Monte Carlo simulations on the specific lattices occupied by lithium atoms and hydrogen bonds. The theoretical results strongly suggest that percolating lithium vacancies and hydrogen bonds are indeed responsible for the solid solution observed in the experimental range $0.22 < x < 0.36$.
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Submitted 9 April, 2004;
originally announced April 2004.
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Basal-plane Incommensurate Phases in HCP Structures
Authors:
I. Luk'yanchuk,
A. Jorio,
M. A. Pimenta
Abstract:
An Ising model with competing interaction is used to study the appearance of incommensurate phases in the basal plane of an hexagonal closed-packed structure. The calculated mean-field phase diagram reveals various 1q-incommensurate and lock-in phases. The results are applied to explain the basal-plane incommensurate phase in some compounds of the A'A"BX_4 family, like K_2MoO_4, K_2WO_4, Rb_2WO4…
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An Ising model with competing interaction is used to study the appearance of incommensurate phases in the basal plane of an hexagonal closed-packed structure. The calculated mean-field phase diagram reveals various 1q-incommensurate and lock-in phases. The results are applied to explain the basal-plane incommensurate phase in some compounds of the A'A"BX_4 family, like K_2MoO_4, K_2WO_4, Rb_2WO4 and to describe the sequence of high-temperature phase transitions in other compounds of this family.
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Submitted 18 November, 1997;
originally announced November 1997.
