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Non-linear hybrid surface-defect states in defective Bi$_2$Se$_3$
Authors:
Sharmila N. Shirodkar,
Pratibha Dev
Abstract:
Surface-states of topological insulators are assumed to be robust against non-magnetic defects in the crystal. However, recent theoretical models and experiments indicate that even non-magnetic defects can perturb these states. Our first-principles calculations demonstrate that the presence of Se vacancies in Bi$_2$Se$_3$, has a greater impact than a mere n-doping of the structure, which would jus…
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Surface-states of topological insulators are assumed to be robust against non-magnetic defects in the crystal. However, recent theoretical models and experiments indicate that even non-magnetic defects can perturb these states. Our first-principles calculations demonstrate that the presence of Se vacancies in Bi$_2$Se$_3$, has a greater impact than a mere n-doping of the structure, which would just shift the Fermi level relative to the Dirac point. We observe the emergence of a non-linear band pinned near the Fermi level, while the Dirac cone shifts deeper into the valence band. We attribute these features in the bandstructure to the interaction between the surface and defect states, with the resulting hybridization between these states itself depending on the position and symmetry of the Se vacancy relative to the surfaces. Our results bring us a step closer to understanding the exotic physics emerging from defects in Bi$_2$Se$_3$ that remained unexplored in prior studies.
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Submitted 21 July, 2022; v1 submitted 10 January, 2022;
originally announced January 2022.
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Defining shapes of 2D-crystals with undefinable edge-energies
Authors:
Luqing Wang,
Sharmila N. Shirodkar,
Zhuhua Zhang,
Boris I. Yakobson
Abstract:
The equilibrium shape of crystals is a fundamental property of both aesthetic appeal and practical import. It is also a visible macro-manifestation of the underlying atomic-scale forces and chemical makeup, most conspicuous in two-dimensional (2D) materials of keen current interest. If the crystal surface/edge energy is known for different directions, its shape can be obtained by geometric Wulff c…
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The equilibrium shape of crystals is a fundamental property of both aesthetic appeal and practical import. It is also a visible macro-manifestation of the underlying atomic-scale forces and chemical makeup, most conspicuous in two-dimensional (2D) materials of keen current interest. If the crystal surface/edge energy is known for different directions, its shape can be obtained by geometric Wulff construction, a tenet of crystal physics. However, if symmetry is lacking, the crystal edge energy cannot be defined or calculated, so its shape becomes elusive, presenting an insurmountable problem for theory. Here we show how, in fact, one can proceed with "latent edge energies" towards constructive prediction of a unique crystal shape, and demonstrate it for challenging material-examples, like ${\rm SnS}$ of ${\rm C_{2v}}$ symmetry and even ${\rm AgNO_2}$ of ${\rm C_1}$-no symmetry at all.
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Submitted 19 September, 2019;
originally announced September 2019.
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In Pursuit of 2D Materials for Maximum Optical Response
Authors:
Sunny Gupta,
Sharmila N. Shirodkar,
Alex Kutana,
Boris I. Yakobson
Abstract:
Despite being only a few atoms thick, single-layer two-dimensional (2D) materials display strong electron-photon interactions that could be utilized in efficient light modulators on extreme subwavelength scales. In various applications involving light modulation and manipulation, materials with strong optical response at different wavelengths are required. Using qualitative analytical modeling and…
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Despite being only a few atoms thick, single-layer two-dimensional (2D) materials display strong electron-photon interactions that could be utilized in efficient light modulators on extreme subwavelength scales. In various applications involving light modulation and manipulation, materials with strong optical response at different wavelengths are required. Using qualitative analytical modeling and first-principles calculations, we determine the theoretical limit of the maximum optical response such as absorbance (A) and reflectance (R) in 2D materials and also conduct a computational survey to seek out those with best A and R in various frequency ranges, from mid-infrared (IR) to deep ultraviolet (UV). We find that 2D boron has broadband reflectance R >99% for >100 layers, surpassing conventional thin films of bulk metals such as silver. Moreover, we identify 2D monolayer semiconductors with maximum response, for which we obtain quantitative estimates by calculating quasiparticle energies and accounting for excitonic effects by solving the Bethe-Salpeter equation (BSE). We found several monolayer semiconductors with absorbances >30% in different optical ranges which are more than half of the maximum possible value for a 2D material. Our study predicts 2D materials which can potentially be used in ultra-thin reflectors and absorbers for optoelectronic application in various frequency ranges.
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Submitted 17 September, 2018;
originally announced September 2018.
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Manipulating polarized light with a planar slab of Black Phosphorus
Authors:
Constantinos A. Valagiannopoulos,
Marios Mattheakis,
Sharmila N. Shirodkar,
Efthimios Kaxiras
Abstract:
Wave polarization contains valuable information for electromagnetic signal processing and the ability to manipulate it can be extremely useful in photonic devices. In this work, we propose designs comprised of one of the emerging and interesting two-dimensional media: Black Phosphorus. Due to substantial in-plane anisotropy, a single slab of Black Phosphorus can be very efficient for manipulating…
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Wave polarization contains valuable information for electromagnetic signal processing and the ability to manipulate it can be extremely useful in photonic devices. In this work, we propose designs comprised of one of the emerging and interesting two-dimensional media: Black Phosphorus. Due to substantial in-plane anisotropy, a single slab of Black Phosphorus can be very efficient for manipulating the polarization state of electromagnetic waves. We investigate Black Phosphorus slabs that filter the fields along one direction, or polarization axis rotation, or convert linear polarization to circular. These slabs can be employed as components in numerous mid-IR integrated devices.
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Submitted 17 September, 2017; v1 submitted 18 March, 2017;
originally announced March 2017.
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Quantum plasmons with optical-range frequencies in doped few-layer graphene
Authors:
Sharmila N. Shirodkar,
Marios Mattheakis,
Paul Cazeaux,
Prineha Narang,
Marin Soljačić,
Efthimios Kaxiras
Abstract:
Although plasmon modes exist in doped graphene, the limited range of doping achieved by gating restricts the plasmon frequencies to a range that does not include visible and infrared. Here we show, through the use of first-principles calculations, that the high levels of doping achieved by lithium intercalation in bilayer and trilayer graphene shift the plasmon frequencies into the visible range.…
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Although plasmon modes exist in doped graphene, the limited range of doping achieved by gating restricts the plasmon frequencies to a range that does not include visible and infrared. Here we show, through the use of first-principles calculations, that the high levels of doping achieved by lithium intercalation in bilayer and trilayer graphene shift the plasmon frequencies into the visible range. To obtain physically meaningful results, we introduce a correction of the effect of plasmon interaction across the vacuum separating periodic images of the doped graphene layers, consisting of transparent boundary conditions in the direction perpendicular to the layers; this represents a significant improvement over the Exact Coulomb cutoff technique employed in earlier works. The resulting plasmon modes are due to local field efffects and the non-local response of the material to external electromagnetic fields, requiring a fully quantum mechanical treatment. We describe the features of these quantum plasmons, including the dispersion relation, losses and field localization. Our findings point to a strategy for fine-tuning the plasmon frequencies in graphene and other two dimensional materials.
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Submitted 2 May, 2018; v1 submitted 4 March, 2017;
originally announced March 2017.
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\textit{Ab-initio} Tight-Binding Hamiltonian for Transition Metal Dichalcogenides
Authors:
Shiang Fang,
Rodrick Kuate Defo,
Sharmila N. Shirodkar,
Simon Lieu,
Georgios A. Tritsaris,
Efthimios Kaxiras
Abstract:
We present an accurate \textit{ab-initio} tight-binding hamiltonian for the transition-metal dichalcogenides, MoS$_2$, MoSe$_2$, WS$_2$, WSe$_2$, with a minimal basis (the \textit{d} orbitals for the metal atoms and \textit{p} orbitals for the chalcogen atoms) based on a transformation of the Kohn-Sham density function theory (DFT) hamiltonian to a basis of maximally localized Wannier functions (M…
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We present an accurate \textit{ab-initio} tight-binding hamiltonian for the transition-metal dichalcogenides, MoS$_2$, MoSe$_2$, WS$_2$, WSe$_2$, with a minimal basis (the \textit{d} orbitals for the metal atoms and \textit{p} orbitals for the chalcogen atoms) based on a transformation of the Kohn-Sham density function theory (DFT) hamiltonian to a basis of maximally localized Wannier functions (MLWF). The truncated tight-binding hamiltonian (TBH), with only on-site, first and partial second neighbor interactions, including spin-orbit coupling, provides a simple physical picture and the symmetry of the main band-structure features. Interlayer interactions between adjacent layers are modeled by transferable hopping terms between the chalcogen \textit{p} orbitals. The full-range tight-binding hamiltonian (FTBH) can be reduced to hybrid-orbital k $\cdot$ p effective hamiltonians near the band extrema that captures important low-energy excitations. These \textit{ab-initio} hamiltonians can serve as the starting point for applications to interacting many-body physics including optical transitions and Berry curvature of bands, of which we give some examples.
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Submitted 31 October, 2015; v1 submitted 29 June, 2015;
originally announced June 2015.
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Engineering the electronic bandgaps and band edge positions in carbon-substituted 2D boron nitride: a first-principles investigation
Authors:
Sharmila N. Shirodkar,
Umesh V. Waghmare,
Timothy S. Fisher,
Ricardo Grau-Crespo
Abstract:
Modification of graphene to open a robust gap in its electronic spectrum is essential for its use in field effect transistors and photochemistry applications. Inspired by recent experimental success in the preparation of homogeneous alloys of graphene and boron nitride (BN), we consider here engineering the electronic structure and bandgap of C$_{2x}$B$_{1-x}$N$_{1-x}$ alloys via both compositiona…
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Modification of graphene to open a robust gap in its electronic spectrum is essential for its use in field effect transistors and photochemistry applications. Inspired by recent experimental success in the preparation of homogeneous alloys of graphene and boron nitride (BN), we consider here engineering the electronic structure and bandgap of C$_{2x}$B$_{1-x}$N$_{1-x}$ alloys via both compositional and configurational modification. We start from the BN end-member, which already has a large bandgap, and then show that (a) the bandgap can in principle be reduced to about 2 eV with moderate substitution of C $(x<0.25)$; and (b) the electronic structure of C$_{2x}$B$_{1-x}$N$_{1-x}$ can be further tuned not only with composition $x$, but also with the configuration adopted by C substituents in the BN matrix. Our analysis, based on accurate screened hybrid functional calculations, provides a clear understanding of the correlation found between the bandgap and the level of aggregation of C atoms: the bandgap decreases most when the C atoms are maximally isolated, and increases with aggregation of C atoms due to the formation of bonding and anti-bonding bands associated with hybridization of occupied and empty defect states. We determine the location of valence and conduction band edges relative to vacuum and discuss the implications on the potential use of 2D C$_{2x}$B$_{1-x}$N$_{1-x}$ alloys in photocatalytic applications. Finally, we assess the thermodynamic limitations on the formation of these alloys using a cluster expansion model derived from first-principles.
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Submitted 20 April, 2015;
originally announced April 2015.
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Coupled Phonons, Magnetic Excitations and Ferroelectricity in AlFeO3: Raman and First-principles Studies
Authors:
Pradeep Kumar,
A. Bera,
D. V. S. Muthu,
S. N. Shirodkar,
R. Saha,
A. Shireen,
A. Sundaresan,
U. V. Waghmare,
A. K. Sood,
C. N. R. Rao
Abstract:
We determine the nature of coupled phonons and magnetic excitations in AlFeO3 using inelastic light scattering from 5 K to 315 K covering a spectral range from 100-2200 cm-1 and complementary first-principles density functional theory-based calculations. A strong spin-phonon coupling and magnetic ordering induced phonon renormalization are evident in (a) anomalous temperature dependence of many mo…
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We determine the nature of coupled phonons and magnetic excitations in AlFeO3 using inelastic light scattering from 5 K to 315 K covering a spectral range from 100-2200 cm-1 and complementary first-principles density functional theory-based calculations. A strong spin-phonon coupling and magnetic ordering induced phonon renormalization are evident in (a) anomalous temperature dependence of many modes with frequencies below 850 cm-1, particularly near the magnetic transition temperature Tc ~ 250 K, (b) distinct changes in band positions of high frequency Raman bands between 1100-1800 cm-1, in particular a broad mode near 1250 cm-1 appears only below Tc attributed to the two-magnon Raman scattering. We also observe weak anomalies in the mode frequencies at ~ 100 K, due to a magnetically driven ferroelectric phase transition. Understanding of these experimental observations has been possible on the basis of first-principles calculations of phonons spectrum and their coupling with spins.
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Submitted 28 April, 2012;
originally announced April 2012.
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Multiferroic and magnetoelectric nature of GaFeO3, AlFeO3 and related oxides
Authors:
Rana Saha,
Ajmala Shireen,
Sharmila N. Shirodkar,
Umesh V. Waghmare,
A. Sundaresan,
C. N. R. Rao
Abstract:
GaFeO3, AlFeO3 and related oxides are ferrimagnetic exhibiting magnetodielectric effect. There has been no evidence to date for ferroelectricity and hence multiferroicity in these oxides. We have investigated these oxides as well as oxides of the composition Al1-x-yGaxFe1+yO3 (x = 0.2, y = 0.2) for possible ferroelectricity by carrying out pyroelectric measurements. These measurements establish th…
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GaFeO3, AlFeO3 and related oxides are ferrimagnetic exhibiting magnetodielectric effect. There has been no evidence to date for ferroelectricity and hence multiferroicity in these oxides. We have investigated these oxides as well as oxides of the composition Al1-x-yGaxFe1+yO3 (x = 0.2, y = 0.2) for possible ferroelectricity by carrying out pyroelectric measurements. These measurements establish the occurrence of ferroelectricity at low temperatures below the Nèel temperature in these oxides. They also exhibit significant magnetoelectric effect. We have tried to understand the origin of ferroelectricity based on non-centrosymmetric magnetic ordering and disorder by carrying out first-principles calculations.
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Submitted 12 August, 2012; v1 submitted 26 December, 2011;
originally announced December 2011.
