Showing 1–50 of 57 results for author: Svintsov, D

Testing the tomographic Fermi liquid hypothesis with high-order cyclotron resonance

Authors: Ilia Moiseenko, Erwin Mönch, Kirill Kapralov, Denis Bandurin, Sergey Ganichev, Dmitry Svintsov

Abstract: Recent theoretical studies of carrier-carrier scattering in degenerate two-dimensional systems have revealed radically different relaxation times for odd and even angular harmonics of distribution function. This theoretical concept, dubbed as 'tomographic Fermi liquid', is yet challenging to test with dc electrical measurements as electron scattering weakly affects the electrical resistivity. Here… ▽ More Recent theoretical studies of carrier-carrier scattering in degenerate two-dimensional systems have revealed radically different relaxation times for odd and even angular harmonics of distribution function. This theoretical concept, dubbed as 'tomographic Fermi liquid', is yet challenging to test with dc electrical measurements as electron scattering weakly affects the electrical resistivity. Here, we show that linewidth and amplitude of electromagnetic absorption at the multiple harmonics of the cyclotron resonance carries all necessary information to test the tomographic Fermi liquid hypothesis. Namely, the height and inverse width of $m$-th order cyclotron resonance ($m \ge 2$) is proportional to the lifetime of $m$-th angular harmonic of electron distribution function $τ_m$, if probed at wavelengths exceeding the cyclotron radius $R_c$. Measurements of high-order cyclotron resonance at short wavelengths order of $R_c$ also enable a direct determination of all lifetimes $τ_m$ from a simple linear system of equations that we hereby derive. Extraction of cyclotron resonance lifetimes from an experiment on terahertz photoconductivity in graphene shows that third-order resonance is systematically narrower than second-order one, supporting the prediction of tomographic Fermi liquid hypothesis. △ Less

Submitted 8 September, 2024; originally announced September 2024.

Anomalous terahertz photoconductivity caused by the superballistic flow of hydrodynamic electrons in graphene

Authors: M. Kravtsov, A. L. Shilov, Y. Yang, T. Pryadilin, M. A. Kashchenko, O. Popova, M. Titova, D. Voropaev, Y. Wang, K. Shein, I. Gayduchenko, G. N. Goltsman, M. Lukianov, A. Kudriashov, T. Taniguchi, K. Watanabe, D. A. Svintsov, A. Principi, S. Adam, K. S. Novoselov, D. A. Bandurin

Abstract: Light incident upon materials can induce changes in their electrical conductivity, a phenomenon referred to as photoresistance. In semiconductors, the photoresistance is negative, as light-induced promotion of electrons across the band gap enhances the number of charge carriers participating in transport. In superconductors, the photoresistance is positive because of the destruction of the superco… ▽ More Light incident upon materials can induce changes in their electrical conductivity, a phenomenon referred to as photoresistance. In semiconductors, the photoresistance is negative, as light-induced promotion of electrons across the band gap enhances the number of charge carriers participating in transport. In superconductors, the photoresistance is positive because of the destruction of the superconducting state, whereas in normal metals it is vanishing. Here we report a qualitative deviation from the standard behavior in metallic graphene. We show that Dirac electrons exposed to continuous wave (CW) terahertz (THz) radiation can be thermally decoupled from the lattice by 50~K which activates hydrodynamic electron transport. In this regime, the resistance of graphene constrictions experiences a decrease caused by the THz-driven superballistic flow of correlated electrons. We analyze the dependencies of the negative photoresistance on the carrier density, and the radiation power and show that our superballistic devices operate as sensitive phonon-cooled bolometers and can thus offer a picosecond-scale response time. Beyond their fundamental implications, our findings underscore the practicality of electron hydrodynamics in designing ultra-fast THz sensors and electron thermometers. △ Less

Submitted 29 March, 2024; v1 submitted 27 March, 2024; originally announced March 2024.

Comments: 7 pages, 3 figures

Infrared photodetection in graphene-based heterostructures: bolometric and thermoelectric effects at the tunneling barrier

Authors: Dmitry A. Mylnikov, Mikhail A. Kashchenko, Kirill N. Kapralov, Davit A. Ghazaryan, Evgenii E. Vdovin, Sergey V. Morozov, Kostya S. Novoselov, Denis A. Bandurin, Alexander I. Chernov, Dmitry A. Svintsov

Abstract: Graphene/hBN/graphene tunnel devices offer promise as sensitive mid-infrared photodetectors but the microscopic origin underlying the photoresponse in them remains elusive. In this work, we investigated the photocurrent generation in graphene/hBN/graphene tunnel structures with localized defect states under mid-IR illumination. We demonstrate that the photocurrent in these devices is proportional… ▽ More Graphene/hBN/graphene tunnel devices offer promise as sensitive mid-infrared photodetectors but the microscopic origin underlying the photoresponse in them remains elusive. In this work, we investigated the photocurrent generation in graphene/hBN/graphene tunnel structures with localized defect states under mid-IR illumination. We demonstrate that the photocurrent in these devices is proportional to the second derivative of the tunnel current with respect to the bias voltage, peaking during tunneling through the hBN impurity level. We revealed that the origin of the photocurrent generation lies in the change of the tunneling probability upon radiation-induced electron heating in graphene layers, in agreement with the theoretical model that we developed. Finally, we show that at a finite bias voltage, the photocurrent is proportional to the either of the graphene layers heating under the illumination, while at zero bias, it is proportional to the heating difference. Thus, the photocurrent in such devices can be used for accurate measurements of the electronic temperature providing a convenient alternative to Johnson noise thermometry. △ Less

Submitted 9 December, 2023; originally announced December 2023.

Selective damping of plasmons in coupled two-dimensional systems by Coulomb drag

Authors: Ilya Safonov, Aleksandr S. Petrov, Dmitry Svintsov

Abstract: The Coulomb drag is a many-body effect observed in proximized low-dimensional systems. It appears as emergence of voltage in one of them upon passage of bias current in another. The magnitude of drag voltage can be strongly affected by exchange of plasmonic excitations between the layers; however, the reverse effect of Coulomb drag on properties of plasmons has not been studied. Here, we study the… ▽ More The Coulomb drag is a many-body effect observed in proximized low-dimensional systems. It appears as emergence of voltage in one of them upon passage of bias current in another. The magnitude of drag voltage can be strongly affected by exchange of plasmonic excitations between the layers; however, the reverse effect of Coulomb drag on properties of plasmons has not been studied. Here, we study the plasmon spectra and damping in parallel two-dimensional systems in the presence of Coulomb drag. We find that Coulomb drag leads to selective damping of one of the two fundamental plasma modes of a coupled bilayer. For identical electron doping of both layers, the drag suppresses the acoustic plasma mode; while for symmetric electron-hole doping of the coupled pair, the drag suppresses the optical plasma mode. The selective damping can be observed both for propagating modes in extended bilayers and for localized plasmons in bilayers confined by source and drain contacts. The discussed effect may provide access to the strength of Coulomb interaction in 2d electron systems from various optical and microwave scattering experiments. △ Less

Submitted 8 December, 2023; originally announced December 2023.

Electron-hole collision-limited resistance of gapped graphene

Authors: Arseny Gribachov, Vladimir Vyurkov, Dmitry Svintsov

Abstract: Collisions between electrons and holes can dominate the carrier scattering in clean graphene samples in the vicinity of charge neutrality point. While electron-hole limited resistance in pristine gapless graphene is well-studied, its evolution with induction of band gap $E_g$ is less explored. Here, we derive the functional dependence of electron-hole limited resistance of gapped graphene… ▽ More Collisions between electrons and holes can dominate the carrier scattering in clean graphene samples in the vicinity of charge neutrality point. While electron-hole limited resistance in pristine gapless graphene is well-studied, its evolution with induction of band gap $E_g$ is less explored. Here, we derive the functional dependence of electron-hole limited resistance of gapped graphene $ρ_{eh}$ on the ratio of gap and thermal energy $E_g/kT$. At low temperatures and large band gaps, the resistance grows linearly with $E_g/kT$, and possesses a minimum at $E_g \approx 2.5 kT$. This contrast to the Arrhenius activation-type behaviour for intrinsic semiconductors. Introduction of impurities restores the Arrhenius law for resistivity at low temperatures and/or high doping densities. The hallmark of electron-hole collision effects in graphene resistivity at charge neutrality is the crossover between exponential and power-law resistivity scalings with temperature. △ Less

Submitted 8 December, 2023; originally announced December 2023.

Ultimate sharpness of the tunneling resonance in vertical heterostructures

Authors: Georgy Alymov, Dmitry Svintsov

Abstract: Heterostructures comprised of two two-dimensional electron systems (2DES) separated by a dielectric exhibit resonant tunneling when the band structures of both systems are aligned. It is commonly assumed that the height and width of the resonant peak in the tunneling current is determined by electron scattering and rotational misalignment of crystal structures of the 2DES. We identify two fundamen… ▽ More Heterostructures comprised of two two-dimensional electron systems (2DES) separated by a dielectric exhibit resonant tunneling when the band structures of both systems are aligned. It is commonly assumed that the height and width of the resonant peak in the tunneling current is determined by electron scattering and rotational misalignment of crystal structures of the 2DES. We identify two fundamental factors limiting the maximum height and steepness of the resonance: coupling to contacts and tunnel splitting of energy levels. The upper limit of the tunneling current is the number of electrons available for tunneling times half the tunnel coupling between the 2DES. As a result of a tradeoff between the contact-induced level broadening and contact resistance, the maximum current is only achievable when the coupling to contacts equals the tunnel level splitting. According to our model calculations, the limiting behavior can be observed in double-gated graphene/few-layer hexagonal boron nitride/graphene heterostructures. △ Less

Submitted 11 October, 2023; originally announced October 2023.

Refraction laws for two-dimensional plasmons

Authors: Dmitry Svintsov, Georgy Alymov

Abstract: Despite numerous applications of two-dimensional plasmons for electromagnetic energy manipulation at the nanoscale, their quantitative refraction and reflection laws (analogs of Fresnel formulas in optics) have not yet been established. This fact can be traced down to the strong non-locality of equations governing the 2d plasmon propagation. Here, we tackle this difficulty by direct solution of pl… ▽ More Despite numerous applications of two-dimensional plasmons for electromagnetic energy manipulation at the nanoscale, their quantitative refraction and reflection laws (analogs of Fresnel formulas in optics) have not yet been established. This fact can be traced down to the strong non-locality of equations governing the 2d plasmon propagation. Here, we tackle this difficulty by direct solution of plasmon scattering problem with Wiener-Hopf technique. We obtain the reflection and transmission coefficients for 2d plasmons at the discontinuity of 2d conductivity at arbitrary incidence angle, for both gated and non-gated 2d systems. At a certain incidence angle, the absolute reflectivity has a pronounced dip reaching zero for gated plasmons. The dip is associated with wave passage causing no dynamic charge accumulation at the boundary. For all incidence angles, the reflection has a non-trivial phase different from zero and $π$. △ Less

Submitted 23 May, 2023; originally announced May 2023.

Journal ref: Phys. Rev. B 108, L121410 (2023)

Zero-bias photodetection in 2d materials via geometric design of contacts

Authors: Valentin A. Semkin, Aleksandr V. Shabanov, Dmitry A. Mylnikov, Mikhail A. Kashchenko, Ivan K. Domaratskiy, Sergey S. Zhukov, Dmitry A. Svintsov

Abstract: Structural or crystal asymmetry are necessary conditions for emergence of zero-bias photocurrent in light detectors. Structural asymmetry has been typically achieved via $p-n$ doping being a technologically complex process. Here, we propose an alternative approach to achieve zero-bias photocurrent in 2d material flakes exploiting the geometrical non-equivalence of source and drain contacts. As a p… ▽ More Structural or crystal asymmetry are necessary conditions for emergence of zero-bias photocurrent in light detectors. Structural asymmetry has been typically achieved via $p-n$ doping being a technologically complex process. Here, we propose an alternative approach to achieve zero-bias photocurrent in 2d material flakes exploiting the geometrical non-equivalence of source and drain contacts. As a prototypical example, we equip a square-shaped flake of PdSe$_2$ with mutually orthogonal metal leads. Upon uniform illumination with linearly-polarized light, the device demonstrates non-zero photocurrent which flips its sign upon 90$^\circ$ polarization rotation. The origin of zero-bias photocurrent lies in polarization-dependent lightning-rod effect. It enhances the electromagnetic field at one contact from the orthogonal pair, and selectively activates the internal photoeffect at the respective metal-PdSe$_2$ Schottky junction. The proposed technology of contact engineering can be extended to arbitrary 2d materials and detection of both polarized and natural light. △ Less

Submitted 29 March, 2023; originally announced March 2023.

Journal ref: Nano Lett. 2023, 23, 11, 5250-5256

Plasmons in a Square of Two-Dimensional Electrons

Authors: A. M. Zarezin, D. Mylnikov, A. S. Petrov, D. Svintsov, P. A. Gusikhin, I. V. Kukushkin, V. M. Muravev

Abstract: Microwave absorption spectra of a single square of two-dimensional electrons (2DES) have been investigated using an optical detection technique. Fundamental dipole and harmonic quadrupole plasmon modes have been identified and compared to those in the disk geometry. In the square-shaped 2DES, a strong interaction is discovered between the neighboring plasmon modes, whereas no such hybridization is… ▽ More Microwave absorption spectra of a single square of two-dimensional electrons (2DES) have been investigated using an optical detection technique. Fundamental dipole and harmonic quadrupole plasmon modes have been identified and compared to those in the disk geometry. In the square-shaped 2DES, a strong interaction is discovered between the neighboring plasmon modes, whereas no such hybridization is observed in the disk-shaped geometry. We establish a rigid theoretical platform to analytically describe the magneto-optical response of confined two-dimensional systems. The developed theory provides a proper description of the obtained experimental results. △ Less

Submitted 20 December, 2022; originally announced December 2022.

Ultralow-noise terahertz detection by p-n junctions in gapped bilayer graphene

Authors: Elena Titova, Dmitry Mylnikov, Mikhail Kashchenko, Sergey Zhukov, Kirill Dzhikirba, Kostya Novoselov, Denis Bandurin, Georgy Alymov, Dmitry Svintsov

Abstract: Graphene shows a strong promise for detection of terahertz (THz) radiation due to its high carrier mobility, compatibility with on-chip waveguides and transistors, and small heat capacitance. At the same time, weak reaction of graphene's physical properties on the detected radiation can be traced down to the absence of band gap. Here, we study the effect of electrically-induced band gap on THz det… ▽ More Graphene shows a strong promise for detection of terahertz (THz) radiation due to its high carrier mobility, compatibility with on-chip waveguides and transistors, and small heat capacitance. At the same time, weak reaction of graphene's physical properties on the detected radiation can be traced down to the absence of band gap. Here, we study the effect of electrically-induced band gap on THz detection in graphene bilayer with split-gate p-n junction. We show that gap induction leads to simultaneous increase in current and voltage responsivities. At operating temperatures of ~25 K, the responsivity at 20 meV band gap is from 3 to 20 times larger than that in the gapless state. The maximum voltage responsivity of our devices at 0.13 THz illumination exceeds 50 kV/W, while the noise equivalent power falls down to 36 fW/Hz^0.5. These values set new records for semiconductor-based cryogenic terahertz detectors, and pave the way for efficient and fast terahertz detection. △ Less

Submitted 10 December, 2022; originally announced December 2022.

Terahertz photoconductivity in bilayer graphene transistors: evidence for tunneling at gate-induced junctions

Authors: Dmitry Mylnikov, Elena I. Titova, Mikhail A. Kashchenko, Ilya V. Safonov, Sergey S. Zhukov, Valentin A. Semkin, Kostya S. Novoselov, Denis A. Bandurin, Dmitry A. Svintsov

Abstract: Photoconductivity of novel materials is the key property of interest for design of photodetectors, optical modulators, and switches. Despite the photoconductivity of most novel 2d materials has been studied both theoretically and experimentally, the same is not true for 2d p-n junctions that are necessary blocks of most electronic devices. Here, we study the sub-terahertz photocoductivity of gappe… ▽ More Photoconductivity of novel materials is the key property of interest for design of photodetectors, optical modulators, and switches. Despite the photoconductivity of most novel 2d materials has been studied both theoretically and experimentally, the same is not true for 2d p-n junctions that are necessary blocks of most electronic devices. Here, we study the sub-terahertz photocoductivity of gapped bilayer graphene with electrically-induced p-n junctions. We find a strong positive contribution from junctions to resistance, temperature resistance coefficient and photo-resistivity at cryogenic temperatures T ~ 20 K. The contribution to these quantities from junctions exceeds strongly the bulk values at uniform channel doping even at small band gaps ~ 10 meV. We further show that positive junction photoresistance is a hallmark of interband tunneling, and not of intra-band thermionic conduction. Our results point to the possibility of creating various interband tunneling devices based on bilayer graphene, including steep-switching transistors and selective sensors. △ Less

Submitted 8 December, 2022; originally announced December 2022.

One-dimensional electron localization in semiconductors coupled to electromagnetic cavities

Authors: Dmitry Svintsov, Georgy Alymov, Zhanna Devizorova, Luis Martin-Moreno

Abstract: Electrical conductivity of one-dimensional (1d) disordered solids decays exponentially with their length, which is a celebrated manifestation of the localization phenomenon. Here, we study the modifications of localized conductivity induced by placement of 1d semiconductors inside of single-mode electromagnetic cavities, focusing on the regime of non-degenerate doping. We use the Green's function… ▽ More Electrical conductivity of one-dimensional (1d) disordered solids decays exponentially with their length, which is a celebrated manifestation of the localization phenomenon. Here, we study the modifications of localized conductivity induced by placement of 1d semiconductors inside of single-mode electromagnetic cavities, focusing on the regime of non-degenerate doping. We use the Green's function technique modified for the non-perturbative account of cavity excited states, and including both coherent electron-cavity effects (i.e. electron motion in the zero-point fluctuating field) and incoherent processes of photon emission upon tunneling. The energy spectrum of electron transmission in the cavity acquires Fano-type resonances associated with virtual photon emission, passage along the resonant level, and photon re-absorption. The quality factor of the Fano resonance depends on whether the intermediate state is coupled to the leads, and reaches its maximum when this state is localized deep in the disorder potential. Coupling to the cavity also elevates the energies of the shallow bound states, bringing them to the conduction band bottom. Such an effect leads to the enhancement of the low-temperature conductance. △ Less

Submitted 27 November, 2023; v1 submitted 23 November, 2022; originally announced November 2022.

Journal ref: Phys. Rev. B 109, 045432 (2024)

Signatures of non-local conductivity in near-field microscopy

Authors: Mikhail Khavronin, Dmitry Svintsov

Abstract: We propose and theoretically substantiate a new method to study the non-local conductivity of two-dimensional electron systems (2DES) using the tools of near-field microscopy. We show that the height dependence of induced dipole moment of illuminated near-field probe is substantially different for various transport regimes of charge carriers in 2DES. For hydrodynamic transport regime, the induced… ▽ More We propose and theoretically substantiate a new method to study the non-local conductivity of two-dimensional electron systems (2DES) using the tools of near-field microscopy. We show that the height dependence of induced dipole moment of illuminated near-field probe is substantially different for various transport regimes of charge carriers in 2DES. For hydrodynamic transport regime, the induced dipole moment scales as $z_0^{-2}$, where $z_0$ is the elevation of probe above the 2DES. Both for Drude and classical ballistic regimes of conduction, the dipole moment scales as $z_0^{-3}$. In the former case, the dipole moment is carrier density-independent, while in the latter it largely depends on carrier density. More generally, we find that the induced dipole moment of the probe is proportional to the Laplace transform of wave-vector dependent conductivity and inverse dielectric function of 2DES over the wave vectors $q$. Our results should provide a simple tool for studies of non-local conductivity in solids that was challenging to address with other techniques. △ Less

Submitted 5 May, 2022; originally announced May 2022.

Comments: 6 pages, 5 figures

Journal ref: Phys. Rev. B 107, 205409 (2023)

Polarization-resolving graphene-based mid-infrared detector

Authors: Valentin Semkin, Dmitry Mylnikov, Elena Titova, Sergey Zhukov, Dmitry Svintsov

Abstract: The ability to resolve the polarization of light with on-chip devices represents an urgent problem in optoelectronics. The detectors with polarization resolution demonstrated so far mostly require multiple oriented detectors or movable external polarizers. Here, we experimentally demonstrate the feasibility to resolve the polarization of mid-infrared light with a single chemical-vapor-deposited gr… ▽ More The ability to resolve the polarization of light with on-chip devices represents an urgent problem in optoelectronics. The detectors with polarization resolution demonstrated so far mostly require multiple oriented detectors or movable external polarizers. Here, we experimentally demonstrate the feasibility to resolve the polarization of mid-infrared light with a single chemical-vapor-deposited graphene-channel device with dissimilar metal contacts. This possibility stems from an unusual dependence of photoresponse at graphene-metal junctions on gate voltage and polarization angle. Namely, there exist certain gate voltages providing the polarization-insensitive signal; operation at these voltages can be used for power calibration of the detector. At other gate voltages, the detector features very strong polarization sensitivity, with the ratio of signals for two orthogonal polarizations reaching ~10. Operation at these voltages can provide information about polarization angles, after the power calibration. We show that such unusual gate- and polarization-dependence of photosignal can appear upon competition of isotropic and anisotropic photovoltage generation pathways and discuss the possible physical candidates. △ Less

Submitted 23 March, 2022; originally announced March 2022.

Comments: 6 pages, 4 figures

Journal ref: Appl. Phys. Lett. 120, 191107 (2022)

Ballistic-to-hydrodynamic transition and collective modes for two-dimensional electron systems in magnetic field

Authors: Kirill Kapralov, Dmitry Svintsov

Abstract: The recent demonstrations of viscous hydrodynamic electron flow in two-dimensional electron systems poses serious questions to the validity of existing transport theories, including the ballistic model, the collision-induced and collisionless hydrodynamics. While the theories of transport at hydrodynamic-to-ballistic crossover for free 2d electrons are well established, the same is not true for el… ▽ More The recent demonstrations of viscous hydrodynamic electron flow in two-dimensional electron systems poses serious questions to the validity of existing transport theories, including the ballistic model, the collision-induced and collisionless hydrodynamics. While the theories of transport at hydrodynamic-to-ballistic crossover for free 2d electrons are well established, the same is not true for electrons in magnetic fields. In this work, we develop an analytically solvable model describing the transition from ballistic to hydrodynamic transport with changing the strength of electron-electron collisions in magnetic fields. Within this model, we find an expression for the high-frequency non-local conductivity tensor of 2d electrons. It is valid at arbitrary relation between frequency of external field $ω$, the cyclotron frequency $ω_c$, and the frequency of e-e collisions $τ^{-1}_{ee}$. We use the obtained expression to study the transformation of 2d magnetoplasmon modes at hydrodynamic-to-ballistic crossover. In the true hydrodynamic regime, $ωτ_{ee} \ll 1$, the 2DES supports a single magnetoplasmon mode that is not split at cyclotron harmonics. In the ballistic regime, $ωτ_{ee} \gg 1$, the plasmon dispersion develops splittings at cyclotron harmonics, forming the Bernstein modes. A formal long-wavelength expansion of kinetic equations ("collisionless hydrodynamics") predicts the first splitting of plasmon dispersion at $ω\approx 2ω_c$. Still, such expansion fails to predict the zero and negative group velocity sections of true magnetoplasmon dispersion, for which the full kinetic model is required. △ Less

Submitted 7 July, 2022; v1 submitted 8 March, 2022; originally announced March 2022.

Comments: 8 pages, 5 figures; typos corrected, references added, introduction extended, results unchanged

A place for two-dimensional plasmonics in electromagnetic wave detection

Authors: Dmitry Mylnikov, Dmitry Svintsov

Abstract: Plasmons in two-dimensional electron systems (2DES) feature ultra-strong confinement and are expected to efficiently mediate the interactions between light and charge carriers. Despite these expectations, the electromagnetic detectors exploiting 2d plasmon resonance have been so far inferior to their non-resonant counterparts. Here, we theoretically analyse the origin of these failures, and sugges… ▽ More Plasmons in two-dimensional electron systems (2DES) feature ultra-strong confinement and are expected to efficiently mediate the interactions between light and charge carriers. Despite these expectations, the electromagnetic detectors exploiting 2d plasmon resonance have been so far inferior to their non-resonant counterparts. Here, we theoretically analyse the origin of these failures, and suggest a proper niche for 2d plasmonics in electromagnetic wave detection. We find that a confined 2DES supporting plasmon resonance has an upper limit of absorption cross-section, which is identical to that of simple metallic dipole antenna. Small size of plasmonic resonators implies their weak dipole moments and impeded coupling to free-space radiation. Achieving the 'dipole limit' of absorption cross-section in isolated 2DES is possible either at unrealistically long carrier momentum relaxation times, or at resonant frequencies below units of terahertz. We further show that amendment of even small metal contacts to 2DES promotes the coupling and reduces the fundamental mode frequency. The contacted resonators can still have deep-subwavelength size. They can be merged into compact arrays of detectors, where signals from elements tuned to different frequencies are summed up. Such arrays may find applications in multi-channel wireless communications, hyper-spectral imaging, and energy harvesting. △ Less

Submitted 20 December, 2021; originally announced December 2021.

Comments: 9 pages, 5 figures

Journal ref: Phys. Rev. Applied 17, 064055 (2022)

Optimal asymmetry of transistor-based terahertz detectors

Authors: Aleksandr Shabanov, Maxim Moskotin, Vsevolod Belosevich, Yakov Matyushkin, Maxim Rybin, Georgy Fedorov, Dmitry Svintsov

Abstract: Detectors of terahertz radiation based on field-effect transistors (FETs) are among most promising candidates for low-noise passive signal rectification both in imaging systems and wireless communications. However, it was not realised so far that geometric asymmetry of common FET with respect to source-drain interchange is a strong objective to photovoltage harvesting. Here, we break the tradition… ▽ More Detectors of terahertz radiation based on field-effect transistors (FETs) are among most promising candidates for low-noise passive signal rectification both in imaging systems and wireless communications. However, it was not realised so far that geometric asymmetry of common FET with respect to source-drain interchange is a strong objective to photovoltage harvesting. Here, we break the traditional scheme and reveal the optimally-asymmetric FET structure providing the maximization of THz responsivity. We fabricate a series of graphene transistors with variable top gate position with respect to mid-channel, and compare their sub-THz responsivities in a wide range of carrier densities. We show that responsivity is maximized for input gate electrode shifted toward the source contact. Theoretical simulations show that for large channel resistance, exceeding the gate impedance, such recipe for responsivity maximisation is universal, and holds for both resistive self-mixing and photo-thermoelectric detection pathways. In the limiting case of small channel resistance, the thermoelectric and self-mixing voltages react differently upon changing the asymmetry, which may serve to disentangle the origin of nonlinearities in novel materials. △ Less

Submitted 29 October, 2021; originally announced October 2021.

Comments: 6 pages, 4 figures

Journal ref: Appl. Phys. Lett. vol. 119, 163505 (2021)

Plasmonic drag photocurrent in graphene at extreme nonlocality

Authors: Vladimir Silkin, Dmitry Svintsov

Abstract: It is commonly assumed that photocurrent in two-dimensional systems with centrosymmetric lattice is generated at structural inhomogenities, such as p-n junctions. Here, we study an alternative mechanism of photocurrent generation associated with inhomogenity of the driving electromagnetic field, termed as 'plasmonic drag'. It is associated with direct momentum transfer from field to conduction ele… ▽ More It is commonly assumed that photocurrent in two-dimensional systems with centrosymmetric lattice is generated at structural inhomogenities, such as p-n junctions. Here, we study an alternative mechanism of photocurrent generation associated with inhomogenity of the driving electromagnetic field, termed as 'plasmonic drag'. It is associated with direct momentum transfer from field to conduction electrons, and can be characterized by a non-local non-linear conductivity $σ^{(2)}({\bf q},ω)$. By constructing a classical kinetic model of non-linear conductivity with full account of non-locality, we show that it is resonantly enhanced for wave phase velocity coinciding with electron Fermi velocity. The enhancement is interpreted as phase locking between electrons and the wave. We discuss a possible experiment where non-uniform field is created by a propagating graphene plasmon, and find an upper limit of the current responsivity vs plasmon velocity. This limit is set by a competition between resonantly growing $σ^{(2)}({\bf q},ω)$ and diverging kinetic energy of electrons as the wave velocity approaches Fermi velocity. △ Less

Submitted 23 June, 2021; originally announced June 2021.

Journal ref: Phys. Rev. B 104, 155438 (2021)

Cyclotron resonance overtones and near-field magnetoabsorption via terahertz Bernstein modes in graphene

Authors: D. A. Bandurin, E. Mönch, K. Kapralov, I. Y. Phinney, K. Lindner, S. Liu, J. H. Edgar, I. A. Dmitriev, P. Jarillo-Herrero, D. Svintsov, S. D. Ganichev

Abstract: Two-dimensional electron systems subjected to a perpendicular magnetic field absorb electromagnetic radiation via the cyclotron resonance (CR). Here we report a qualitative breach of this well-known behaviour in graphene. Our study of the terahertz photoresponse reveals a resonant burst at the main overtone of the CR, drastically exceeding the signal detected at the position of the ordinary CR. In… ▽ More Two-dimensional electron systems subjected to a perpendicular magnetic field absorb electromagnetic radiation via the cyclotron resonance (CR). Here we report a qualitative breach of this well-known behaviour in graphene. Our study of the terahertz photoresponse reveals a resonant burst at the main overtone of the CR, drastically exceeding the signal detected at the position of the ordinary CR. In accordance with the developed theory, the photoresponse dependencies on the magnetic field, doping level, and sample geometry suggest that the origin of this anomaly lies in the near-field magnetoabsorption facilitated by the Bernstein modes, ultra-slow magnetoplasmonic excitations reshaped by nonlocal electron dynamics. Close to the CR harmonics, these modes are characterized by a flat dispersion and a diverging plasmonic density of states that strongly amplifies the radiation absorption. Besides fundamental interest, our experimental results and developed theory show that the radiation absorption via nonlocal collective modes can facilitate a strong photoresponse, a behaviour potentially useful for infrared and terahertz technology. △ Less

Submitted 1 July, 2021; v1 submitted 3 June, 2021; originally announced June 2021.

Comments: 27 pages, 22 figures

Journal ref: Nature Physics 18, 462-467 (2022)

Acoustic plasmons in type-I Weyl semimetals

Authors: A. N. Afanasiev, A. A. Greshnov, D. Svintsov

Abstract: Massless chiral fermions emergent in inversion symmetry-breaking Weyl semimetals (WSMs) reside in the vicinity of multiple low symmetry nodes and thus acquire strongly anisotropic dispersion. We investigate the longitudinal electromagnetic modes of two-component degenerate Weyl plasma relevant to the realistic band structure of type-I WSM. We show that the actual spectrum of three dimensional coll… ▽ More Massless chiral fermions emergent in inversion symmetry-breaking Weyl semimetals (WSMs) reside in the vicinity of multiple low symmetry nodes and thus acquire strongly anisotropic dispersion. We investigate the longitudinal electromagnetic modes of two-component degenerate Weyl plasma relevant to the realistic band structure of type-I WSM. We show that the actual spectrum of three dimensional collective density excitations in TaAs family of WSM is gaples due to emergence of acoustic plasmons corresponding to out-of-phase oscillations of the plasma components. These modes exist around the [001] crystallographic direction and are weakly damped, thanks to large difference in the Weyl velocities of the $W_1$ and $W_2$ quasiparticles when propagating along [001]. We show that acoustic plasmons can manifest themselves as slow beatings of electric potential superimposed on fast plasmonic oscillations upon charge relaxation. The revealed acoustic modes can stimulate purely electronic superconductivity, collisionless plasmon instabilities, and formation of Weyl soundarons. △ Less

Submitted 25 April, 2021; originally announced April 2021.

Comments: 10 pages, 7 figures

Journal ref: Phys. Rev. B 103, 205201 (2021)

Feasibility of lasing in the GaAs Reststrahlen band with HgTe multiple quantum well laser diodes

Authors: Aleksandr Afonenko, Dmitry Ushakov, Georgy Alymov, Aleksandr Dubinov, Sergey Morozov, Vladimir Gavrilenko, Dmitry Svintsov

Abstract: Operation of semiconductor lasers in the 20--50 $μ$m wavelength range is hindered by strong non-radiative recombination in the interband laser diodes, and strong lattice absorption in GaAs-based quantum cascade structures. Here, we propose an electrically pumped laser diode based on multiple HgTe quantum wells with band structure engineered for Auger recombination suppression. Using a comprehensiv… ▽ More Operation of semiconductor lasers in the 20--50 $μ$m wavelength range is hindered by strong non-radiative recombination in the interband laser diodes, and strong lattice absorption in GaAs-based quantum cascade structures. Here, we propose an electrically pumped laser diode based on multiple HgTe quantum wells with band structure engineered for Auger recombination suppression. Using a comprehensive model accounting for carrier drift and diffusion, electron and hole capture in quantum wells, Auger recombination, and heating effects, we show the feasibility of lasing at $λ= 26...30$ $μ$m at temperatures up to 90 K. The output power in the pulse can reach up to 8 mW for microsecond-duration pulses. △ Less

Submitted 27 October, 2020; originally announced October 2020.

Tunnel field-effect transistors for sensitive terahertz detection

Authors: Igor Gayduchenko, Shuigang Xu, Georgy Alymov, Maxim Moskotin, Ivan Tretyakov, Takashi Taniguchi, Kenji Watanabe, Gregory Goltsman, Andre K. Geim, Georgy Fedorov, Dmitry Svintsov, Denis A. Bandurin

Abstract: The rectification of electromagnetic waves to direct currents is a crucial process for energy harvesting, beyond-5G wireless communications, ultra-fast science, and observational astronomy. As the radiation frequency is raised to the sub-terahertz (THz) domain, ac-to-dc conversion by conventional electronics becomes challenging and requires alternative rectification protocols. Here we address this… ▽ More The rectification of electromagnetic waves to direct currents is a crucial process for energy harvesting, beyond-5G wireless communications, ultra-fast science, and observational astronomy. As the radiation frequency is raised to the sub-terahertz (THz) domain, ac-to-dc conversion by conventional electronics becomes challenging and requires alternative rectification protocols. Here we address this challenge by tunnel field-effect transistors made of bilayer graphene (BLG). Taking advantage of BLG's electrically tunable band structure, we create a lateral tunnel junction and couple it to an antenna exposed to THz radiation. The incoming radiation is then down-converted by the tunnel junction nonlinearity, resulting in high-responsivity (> 4 kV/W) and low-noise (0.2 pW/$\sqrt{\mathrm{Hz}}$}) detection. We demonstrate how switching from intraband Ohmic to interband tunneling regime can raise detectors' responsivity by few orders of magnitude, in agreement with the developed theory. Our work demonstrates a potential application of tunnel transistors for THz detection and reveals BLG as a promising platform therefor. △ Less

Submitted 4 January, 2021; v1 submitted 6 October, 2020; originally announced October 2020.

Journal ref: Nature Communications 12, 543 (2021)

Edge diffraction and plasmon launching in two-dimensional electron systems

Authors: Egor Nikulin, Denis Bandurin, Dmitry Svintsov

Abstract: Diffraction of light at lateral inhomogenities is a central process in the near-field studies of nanoscale phenomena, especially the propagation of surface waves. Theoretical description of this process is extremely challenging due to breakdown of plane-wave methods. Here, we present and analyze an exact solution for electromagnetic wave diffraction at the linear junction between two-dimensional e… ▽ More Diffraction of light at lateral inhomogenities is a central process in the near-field studies of nanoscale phenomena, especially the propagation of surface waves. Theoretical description of this process is extremely challenging due to breakdown of plane-wave methods. Here, we present and analyze an exact solution for electromagnetic wave diffraction at the linear junction between two-dimensional electron systems (2DES) with dissimilar surface conductivities. The field at the junction is a combination of three components with different spatial structure: free-field component, non-resonant edge component, and surface plasmon-polariton (SPP). We find closed-form expressions for efficiency of photon-to-plasmon conversion by the edge being the ratio of electric fields in SPP and incident wave. Particularly, the conversion efficiency can considerably exceed unity for the contact between metal and 2DES with large impedance. Our findings can be considered as a first step toward quantitative near-field microscopy of inhomogeneous systems and polaritonic interferometry. △ Less

Submitted 9 June, 2020; originally announced June 2020.

Journal ref: Phys. Rev. B 103, 085306 (2021)

Thresholdless excitation of edge plasmons by transverse current

Authors: Aleksandr S. Petrov, Dmitry Svintsov

Abstract: We theoretically demonstrate that dc electron flow across the junction of two-dimensional electron systems leads to excitation of edge magnetoplasmons. The threshold current for such plasmon excitation does not depend on contact effects and approaches zero for ballistic electron systems, which makes a strong distinction from the well-known Dyakonov-Shur and Cerenkov-type instabilities. We estimate… ▽ More We theoretically demonstrate that dc electron flow across the junction of two-dimensional electron systems leads to excitation of edge magnetoplasmons. The threshold current for such plasmon excitation does not depend on contact effects and approaches zero for ballistic electron systems, which makes a strong distinction from the well-known Dyakonov-Shur and Cerenkov-type instabilities. We estimate the competing plasmon energy gain from dc current and loss due to electron scattering. We show that plasmon self excitation is feasible in GaAs-based heterostructures at $T\lesssim 200$ K and magnetic fields $B \lesssim 10$ T. △ Less

Submitted 8 May, 2020; originally announced May 2020.

Comments: 6 pages, 3 figures

Journal ref: Phys. Rev. B 102, 121402 (2020)

Plasmon damping in electronically open systems

Authors: Kirill Kapralov, Dmitry Svintsov

Abstract: Rapid progress in electrically-controlled plasmonics in solids poses a question about effects of electronic reservoirs on the properties of plasmons. We find that plasmons in electronically open systems [i.e. in (semi)conductors connected to leads] are prone to an additional damping due to charge carrier penetration into contacts and subsequent thermalization. We develop a theory of such lead-indu… ▽ More Rapid progress in electrically-controlled plasmonics in solids poses a question about effects of electronic reservoirs on the properties of plasmons. We find that plasmons in electronically open systems [i.e. in (semi)conductors connected to leads] are prone to an additional damping due to charge carrier penetration into contacts and subsequent thermalization. We develop a theory of such lead-induced damping based on kinetic equation with self-consistent electric field, supplemented by microscopic carrier transport at the interfaces. The lifetime of plasmon in electronically open ballistic system appears to be finite, order of conductor length divided by carrier Fermi (thermal) velocity. The reflection loss of plasmon incident on the contact of semi-conductor and perfectly conducting metal also appears to be finite, order of Fermi velocity divided by wave phase velocity. Recent experiments on plasmon-assisted photodetection are discussed in light of the proposed lead-induced damping phenomenon. △ Less

Submitted 4 May, 2020; originally announced May 2020.

Comments: 5 pages, 4 figures

Journal ref: Phys. Rev. Lett. 125, 236801 (2020)

Fate of electron beam in graphene: Coulomb relaxation or plasma instability?

Authors: Dmitry Svintsov

Abstract: Electron beams in two-dimensional systems can provide a useful tool to study energy-momentum relaxation of electrons and to generate microwave radiation stemming from plasma-beam instabilities. Naturally, these two applications cannot coexist: if beam electrons do relax, the beam is stabilized; if instability exists, it strongly distorts the distribution function of beam electrons. In this paper,… ▽ More Electron beams in two-dimensional systems can provide a useful tool to study energy-momentum relaxation of electrons and to generate microwave radiation stemming from plasma-beam instabilities. Naturally, these two applications cannot coexist: if beam electrons do relax, the beam is stabilized; if instability exists, it strongly distorts the distribution function of beam electrons. In this paper, we study the competition of beam relaxation due to electron-electron (e-e) collisions and development of plasma beam instability in graphene. We find that unstable plasma mode associated with a beam is stabilized already by weak e-e collisions. At intermediate e-e collision frequency, the instability re-appears at the ordinary graphene plasmon mode. Such instability is interpreted as viscous transfer of momentum from beam to 2d plasmons. Its growth rate reaches its maximum at hydrodynamic-to-ballistic crossover, when plasmon wavelength and electron mean free path are of the same order of magnitude. △ Less

Submitted 2 October, 2019; originally announced October 2019.

Comments: 7 pages, 3 figures

Journal ref: Phys. Rev. B 101, 235440 (2020)

Fundamental limits to far-infrared lasing in Auger-suppressed HgCdTe quantum wells

Authors: Georgy Alymov, Vladimir Rumyantsev, Sergey Morozov, Vladimir Gavrilenko, Vladimir Aleshkin, Dmitry Svintsov

Abstract: A challenge of bridging the terahertz gap with semiconductor lasers faces an inevitable problem of enhanced non-radiative Auger recombination with reduction of photon energy. We show that this problem can be mitigated in mercury-cadmium-telluride quantum wells (HgCdTe QWs) wherein the Auger process is suppressed due to formation of quasi-relativistic electron-hole dispersion imposing strong energy… ▽ More A challenge of bridging the terahertz gap with semiconductor lasers faces an inevitable problem of enhanced non-radiative Auger recombination with reduction of photon energy. We show that this problem can be mitigated in mercury-cadmium-telluride quantum wells (HgCdTe QWs) wherein the Auger process is suppressed due to formation of quasi-relativistic electron-hole dispersion imposing strong energy-momentum restrictions on recombining carriers. Such dispersion is formed upon interaction of topological states at the two QW interfaces. We characterize the lasing properties of HgCdTe QWs quantitatively by constructing a microscopic theory for recombination, absorption, and gain, and show the feasibility of lasing down to ~ 50 $μ$m at liquid nitrogen temperature with threshold currents two orders of magnitude lower than in existing lasers. Our findings comply with recent experimental data on stimulated far-infrared emission from HgCdTe QWs and show the directions toward achievement of maximum possible lasing wavelength. △ Less

Submitted 9 August, 2019; originally announced August 2019.

Emission of plasmons by drifting Dirac electrons: where hydrodynamics matters

Authors: Dmitry Svintsov

Abstract: Direct current in clean semiconductors and metals was recently shown to obey the laws of hydrodynamics in a broad range of temperatures and sample dimensions. However, the determination of frequency window for hydrodynamic phenomena remains challenging. Here, we reveal a phenomenon being a hallmark of high-frequency hydrodynamic transport, the Cerenkov emission of plasmons by drifting Dirac electr… ▽ More Direct current in clean semiconductors and metals was recently shown to obey the laws of hydrodynamics in a broad range of temperatures and sample dimensions. However, the determination of frequency window for hydrodynamic phenomena remains challenging. Here, we reveal a phenomenon being a hallmark of high-frequency hydrodynamic transport, the Cerenkov emission of plasmons by drifting Dirac electrons. The effect appears in hydrodynamic regime only due to reduction of plasmon velocity by electron-electron collisions below the velocity of carrier drift. To characterize the Cerenkov effect quantitatively, we analytically find the high-frequency non-local conductivity of drifting Dirac electrons across the hydrodynamic-to-ballistic crossover. We find the growth rates of hydrodynamic plasmon instabilities in two experimentally relevant setups: parallel graphene layers and graphene covered by subwavelength grating, further showing their absence in ballistic regime. We argue that the possibility of Cerenkov emission is linked to singular structure of non-local conductivity of Dirac materials and is independent on specific dielectric environment. △ Less

Submitted 6 August, 2019; originally announced August 2019.

Comments: 5 pages + 6 pages supporting information

Journal ref: Phys. Rev. B 100, 195428 (2019)

Perturbation theory for two-dimensional hydrodynamic plasmons

Authors: Aleksandr S. Petrov, Dmitry Svintsov

Abstract: Perturbation theory is an indispensable tool in quantum mechanics and electrodynamics that handles weak effects on particle motion or fields. However, its extension to plasmons involving complex motion of {\it both} particles and fields remained challenging. We show that this challenge can be mastered if electron motion obeys the laws of hydrodynamics, as recently confirmed in experiments with ult… ▽ More Perturbation theory is an indispensable tool in quantum mechanics and electrodynamics that handles weak effects on particle motion or fields. However, its extension to plasmons involving complex motion of {\it both} particles and fields remained challenging. We show that this challenge can be mastered if electron motion obeys the laws of hydrodynamics, as recently confirmed in experiments with ultra-clean heterostructures. We present a unified approach to evaluate corrections to plasmon spectra induced by carrier drift, magnetic field, Berry curvature, scattering, and viscosity. As a first application, we study the stability of direct current in confined two-dimensional electron systems against self-excitation of plasmons. We show that arbitrarily weak current in the absence of dissipation is unstable provided the structure lacks mirror symmetry. As a second application, we indicate that in extended periodic systems -- plasmonic crystals -- carrier drift induces anomalous Doppler shift, which can be both below and higher than its value in uniform systems. Finally, we exactly evaluate the effect of Berry curvature on spectra of edge plasmons and demonstrate the non-reciprocity induced by anomalous velocity. △ Less

Submitted 10 March, 2019; originally announced March 2019.

Journal ref: Phys. Rev. B 99 195437 (2019)

Tight-binding terahertz plasmons in chemical vapor deposited graphene

Authors: Andrey Bylinkin, Elena Titova, Vitaly Mikheev, Elena Zhukova, Sergey Zhukov, Mikhail Belyanchikov, Mikhail Kashchenko, Andrey Miakonkikh, Dmitry Svintsov

Abstract: Transistor structures comprising graphene and sub-wavelength metal gratings hold a great promise for plasmon-enhanced terahertz detection. Despite considerable theoretical effort, little experimental evidence for terahertz plasmons in such structures was found so far. Here, we report an experimental study of plasmons in graphene-insulator-grating structures using Fourier transform spectroscopy in… ▽ More Transistor structures comprising graphene and sub-wavelength metal gratings hold a great promise for plasmon-enhanced terahertz detection. Despite considerable theoretical effort, little experimental evidence for terahertz plasmons in such structures was found so far. Here, we report an experimental study of plasmons in graphene-insulator-grating structures using Fourier transform spectroscopy in 5-10 THz range. The plasmon resonance is clearly visible above the Drude absorption background even in chemical vapor deposited (CVD) graphene with low carrier mobility $\sim 10^3$ cm$^2$/(V s). We argue that plasmon lifetime is weakly sensistive to scattering by grain boundaries and macoscopic defects which limits the mobility of CVD samples. Upon placing the grating in close proximity to graphene, the plasmon field becomes tightly bound below the metal stripes, while the resonant frequency is determined by the stripe width but not by grating period. Our results open the prospects of large-area commercially available graphene for resonant terahertz detectors. △ Less

Submitted 10 December, 2018; originally announced December 2018.

Comments: 5 pages, 5 figures

Journal ref: Phys. Rev. Applied 11, 054017 (2019)

Comment on "Negative Landau damping in bilayer graphene"

Authors: Dmitry Svintsov, Victor Ryzhii

Abstract: In [Phys. Rev. Lett. vol. 119, p. 133901 (2017)] it was argued that two parallel graphene layers in the presence of electron drift support unstable plasmon modes. Here we show that the predicted plasmon instability is an artifact of errors upon evaluation of graphene polarizability in the presence if electron drift. Crucial role of broken Galilean invariance and spatial dispersion of conductivity… ▽ More In [Phys. Rev. Lett. vol. 119, p. 133901 (2017)] it was argued that two parallel graphene layers in the presence of electron drift support unstable plasmon modes. Here we show that the predicted plasmon instability is an artifact of errors upon evaluation of graphene polarizability in the presence if electron drift. Crucial role of broken Galilean invariance and spatial dispersion of conductivity for suppression of plasmon instabilities is highlighted. △ Less

Submitted 10 December, 2018; originally announced December 2018.

Comments: 2 pages, 1 figure

Journal ref: Phys. Rev. Lett. 123, 219401 (2019)

Relativistic suppression of Auger recombination in Weyl semimetals

Authors: A. N. Afanasiev, A. A. Greshnov, D. Svintsov

Abstract: Auger recombination (AR) being electron-hole annihilation with energy-momentum transfer to another carrier is believed to speed up in materials with small band gap. We theoretically show that this rule is violated in gapless three-dimensional materials with ultra-relativistic electron-hole dispersion, Weyl semimetals (WSM). Namely, AR is prohibited by energy-momentum conservation laws in prototypi… ▽ More Auger recombination (AR) being electron-hole annihilation with energy-momentum transfer to another carrier is believed to speed up in materials with small band gap. We theoretically show that this rule is violated in gapless three-dimensional materials with ultra-relativistic electron-hole dispersion, Weyl semimetals (WSM). Namely, AR is prohibited by energy-momentum conservation laws in prototypical WSM with a single Weyl node, even in the presence of anisotropy and tilt. In real multi-node WSM, the geometric dissimilarity of nodal dispersions enables weak inter-node AR, which is further suppressed by strong screening due to large number of nodes. While partial AR rates between the nodes of the same node group are mutually equal, the inter-group processes are non-reciprocal, so that one of groups is geometrically protected from AR. Our calculations show that geometrical protection can help prolonging AR lifetime by the two orders of magnitude, up to the level of nanoseconds. △ Less

Submitted 30 November, 2018; v1 submitted 6 November, 2018; originally announced November 2018.

Comments: 6 pages + 10 pages of supporting information

Journal ref: Phys. Rev. B 99, 115202 (2019)

Resonant Terahertz Detection Using Graphene Plasmons

Authors: D. A. Bandurin, D. Svintsov, I. Gayduchenko, S. G. Xu, A. Principi, M. Moskotin, I. Tretyakov, D. Yagodkin, S. Zhukov, T. Taniguchi, K. Watanabe, I. V. Grigorieva, M. Polini, G. Goltsman, A. K. Geim, G. Fedorov

Abstract: Plasmons, collective oscillations of electron systems, can efficiently couple light and electric current, and thus can be used to create sub-wavelength photodetectors, radiation mixers, and on-chip spectrometers. Despite considerable effort, it has proven challenging to implement plasmonic devices operating at terahertz frequencies. The material capable to meet this challenge is graphene as it sup… ▽ More Plasmons, collective oscillations of electron systems, can efficiently couple light and electric current, and thus can be used to create sub-wavelength photodetectors, radiation mixers, and on-chip spectrometers. Despite considerable effort, it has proven challenging to implement plasmonic devices operating at terahertz frequencies. The material capable to meet this challenge is graphene as it supports long-lived electrically-tunable plasmons. Here we demonstrate plasmon-assisted resonant detection of terahertz radiation by antenna-coupled graphene transistors that act as both plasmonic Fabry-Perot cavities and rectifying elements. By varying the plasmon velocity using gate voltage, we tune our detectors between multiple resonant modes and exploit this functionality to measure plasmon wavelength and lifetime in bilayer graphene as well as to probe collective modes in its moiré minibands. Our devices offer a convenient tool for further plasmonic research that is often exceedingly difficult under non-ambient conditions (e.g. cryogenic temperatures and strong magnetic fields) and promise a viable route for various photonic applications. △ Less

Submitted 27 November, 2018; v1 submitted 12 July, 2018; originally announced July 2018.

Comments: 19 pages, 12 figures

Journal ref: Nature Communications 9, 5392 (2018)

Real-space-transfer mechanism of negative differential conductivity in gated graphene-phosphorene hybrid structures: Phenomenological heating model

Authors: V. Ryzhii, M. Ryzhii, D. Svintsov, V. Leiman, P. P. Maltsev, D. S. Ponomarev, V. Mitin, M. S. Shur, T. Otsuji

Abstract: We analyze the nonlinear carrier transport in the gated graphene-phosphorene (G-P) hybrid structures - the G-P field-effect transistors (G-P-FETs) using a phenomenological model. This model assumes that due to high carrier densities in the G-P-channel, the carrier system, including the electrons and holes in both the G- and P-layers, is characterized by a single effective temperature. We demonstra… ▽ More We analyze the nonlinear carrier transport in the gated graphene-phosphorene (G-P) hybrid structures - the G-P field-effect transistors (G-P-FETs) using a phenomenological model. This model assumes that due to high carrier densities in the G-P-channel, the carrier system, including the electrons and holes in both the G- and P-layers, is characterized by a single effective temperature. We demonstrate that a strong electric-field dependence of the G-P-channel conductivity and substantially non-linear current-voltage characteristics, exhibiting a negative differential conductivity, are associated with the carrier heating and the real-space carrier transfer between the G- and P-layers. The predicted features of the G-P-systems can be used in the detectors and sources of electromagnetic radiation and in the logical circuits. △ Less

Submitted 4 July, 2018; v1 submitted 16 June, 2018; originally announced June 2018.

Comments: 11 pges, 8 figures

Exact solution for driven oscillations in plasmonic field-effect transistors

Authors: Dmitry Svintsov

Abstract: High-mobility field effect transistors can serve as resonant detectors of terahertz radiation due to excitation of plasmons in the channel. The modeling of these devices previously relied either on approximate techniques, or complex full-wave simulations. In this paper, we obtain an exact solution for driven electrical oscillations in plasmonic field-effect transistor with realistic contact geomet… ▽ More High-mobility field effect transistors can serve as resonant detectors of terahertz radiation due to excitation of plasmons in the channel. The modeling of these devices previously relied either on approximate techniques, or complex full-wave simulations. In this paper, we obtain an exact solution for driven electrical oscillations in plasmonic field-effect transistor with realistic contact geometry. The obtained solution highlights the importance of evanescent plasma waves excited near the contacts, which qualitatively modify the detector responsivity spectra. We derive the boundary condition on the ac floating electrodes of plasmonic FET which interpolates between open-circuit (Dyakonov-Shur) and short-circuit (clamped voltage) boundary conditions. In both limits, the FET photovoltage possesses resonant fringes, however, the absolute value of voltage is greater in the open-circuit regime. △ Less

Submitted 13 June, 2018; originally announced June 2018.

Comments: 5 pages, 4 figures

Journal ref: Phys. Rev. Applied 10, 024037 (2018)

Asymmetry-driven plasmon instabilities in confined hydrodynamic electron flows

Authors: Aleksandr S. Petrov, Dmitry Svintsov

Abstract: Direct current in confined two-dimensional (2d) electron systems can become unstable with respect to the excitation of plasmons. Numerous experiments and simulations hint that structural asymmetry somehow promotes plasmon generation, but a constitutive relation between asymmetry and instability has been missing. We provide such relation in the present paper and show that bounded perfect 2d electro… ▽ More Direct current in confined two-dimensional (2d) electron systems can become unstable with respect to the excitation of plasmons. Numerous experiments and simulations hint that structural asymmetry somehow promotes plasmon generation, but a constitutive relation between asymmetry and instability has been missing. We provide such relation in the present paper and show that bounded perfect 2d electron fluids in asymmetric structures are unstable under arbitrarily weak drive currents. To this end, we develop a perturbation theory for hydrodynamic plasmons and evaluate corrections to their eigenfrequency induced by carrier drift, scattering, and viscosity. We show that plasmon gain continuously increases with degree of plasmon mode asymmetry until it surrenders to viscous dissipation that also benefits from asymmetry. The developed formalism allows us to put a lower bound on the instability threshold current, which corresponds to the Reynolds number $R_{\min} = 2\sqrt{3}$ for one-dimensional plasmons in 2d channel under constant voltage bias. △ Less

Submitted 12 February, 2018; originally announced February 2018.

Comments: 9 pages, 4 figures

Journal ref: Phys. Rev. B 99, 195437 (2019)

Dual Origin of Room Temperature Sub-Terahertz Photoresponse in Graphene Field Effect Transistors

Authors: D. A. Bandurin, I. Gayduchencko, Y. Cao, M. Moskotin, A. Principi, I. V. Grigorieva, G. Goltsman, G. Fedorov, D. Svintsov

Abstract: Graphene is considered as a promising platform for detectors of high-frequency radiation up to the terahertz (THz) range due to graphene$'$s superior electron mobility. Previously it has been shown that graphene field effect transistors (FETs) exhibit room temperature broadband photoresponse to incoming THz radiation thanks to the thermoelectric and/or plasma wave rectification. Both effects exhib… ▽ More Graphene is considered as a promising platform for detectors of high-frequency radiation up to the terahertz (THz) range due to graphene$'$s superior electron mobility. Previously it has been shown that graphene field effect transistors (FETs) exhibit room temperature broadband photoresponse to incoming THz radiation thanks to the thermoelectric and/or plasma wave rectification. Both effects exhibit similar functional dependences on the gate voltage and therefore it was found to be difficult to disentangle these contributions in the previous studies. In this letter, we report on combined experimental and theoretical studies of sub-THz response in graphene field-effect transistors analyzed at different temperatures. This temperature-dependent study allowed us to reveal the role of photo-thermoelectric effect, p-n junction rectification, and plasmonic rectification in the sub-THz photoresponse of graphene FETs. △ Less

Submitted 19 March, 2018; v1 submitted 6 December, 2017; originally announced December 2017.

Comments: 5 pages + 5 pages Supplementary information

Journal ref: Appl. Phys. Lett. 112, 141101 (2018)

Hydrodynamic-to-ballistic crossover in Dirac fluid

Authors: Dmitry Svintsov

Abstract: We develop an exactly solvable classical kinetic model of transport in Dirac materials accounting for strong electron-electron (e-e) and electron-hole (e-h) collisions. We use this model to track the evolution of graphene conductivity and properties of its collective excitations across the hydrodynamic-to-ballistic crossover. We find the relaxation rate of electric current by e-e collisions that i… ▽ More We develop an exactly solvable classical kinetic model of transport in Dirac materials accounting for strong electron-electron (e-e) and electron-hole (e-h) collisions. We use this model to track the evolution of graphene conductivity and properties of its collective excitations across the hydrodynamic-to-ballistic crossover. We find the relaxation rate of electric current by e-e collisions that is possible due to the lack of Galilean invariance, and introduce a universal numerical measure of this non-invariance in arbitrary dimension. We find the two branches of collective excitations in the Dirac fluid: plasmons and electron-hole sound. The sound waves have small viscous damping at the neutrality point both in the hydrodynamic and ballistic regimes, but acquire large damping due to e-h friction even at slight doping. On the contrary, plasmons acquire strong frictional damping at the neutrality point and become well-defined in doped samples. △ Less

Submitted 14 January, 2018; v1 submitted 13 October, 2017; originally announced October 2017.

Comments: 6 pages, 2 figures

Journal ref: Phys. Rev. B 97, 121405 (2018)

Auger recombination in Dirac materials: A tangle of many-body effects

Authors: Georgy Alymov, Vladimir Vyurkov, Victor Ryzhii, Akira Satou, Dmitry Svintsov

Abstract: The peculiar electron dispersion in Dirac materials makes lowest-order Auger processes prohibited or marginally prohibited by energy and momentum conservation laws. Thus, Auger recombination (AR) in these materials is very sensitive to many-body effects. We incorporate them at the level of the $GW$ approximation into the nonequilibrium Green's functions approach to AR and study the role of dynamic… ▽ More The peculiar electron dispersion in Dirac materials makes lowest-order Auger processes prohibited or marginally prohibited by energy and momentum conservation laws. Thus, Auger recombination (AR) in these materials is very sensitive to many-body effects. We incorporate them at the level of the $GW$ approximation into the nonequilibrium Green's functions approach to AR and study the role of dynamic screening, spectrum broadening and renormalization in the case of weakly pumped undoped graphene. We find that incorrect treatment of many-body effects can lead to an order-of-magnitude error in the recombination rate. We show that the AR time weakly (sublinearly) depends on the background dielectric constant, which limits the possibility to control recombination by the choice of substrate. However, the AR time can be considerably prolonged by placing graphene under a metal gate or by introducing a bandgap. With carrier cooling taken into account, our results comply with experiments on photoexcited graphene. △ Less

Submitted 20 May, 2018; v1 submitted 26 September, 2017; originally announced September 2017.

Journal ref: Phys. Rev. B 97, 205411 (2018)

Plasmon-assisted resonant tunneling in graphene-based heterostructures

Authors: V. Enaldiev, A. Bylinkin, D. Svintsov

Abstract: We develop a theory of electron tunneling accompanied by carrier-carrier scattering in graphene - insulator - graphene heterostructures. Due to the dynamic screening of Coulomb interaction, the scattering-aided tunneling is resonantly enhanced if the transferred energy and momentum correspond to those of surface plasmons. We reveal the possible experimental manifestations of such plasmon-assisted… ▽ More We develop a theory of electron tunneling accompanied by carrier-carrier scattering in graphene - insulator - graphene heterostructures. Due to the dynamic screening of Coulomb interaction, the scattering-aided tunneling is resonantly enhanced if the transferred energy and momentum correspond to those of surface plasmons. We reveal the possible experimental manifestations of such plasmon-assisted tunneling in current-voltage curves and plasmon emission spectra of graphene-based tunnel junctions. We find that inelastic current and plasmon emission rates have sharp peaks at voltages providing equal energies, momenta and group velocities of plasmons and interlayer single-particle excitations. The strength of this resonance, which we call plasmaronic resonance, is limited by interlayer twist and plasmon lifetime. The onset of plasmon-assisted tunneling can be also marked by a cusp in the junction $I(V)$-curve at low temperatures, and the threshold voltage for such tunneling weakly depends on carrier density and persists in the presence of interlayer twist. △ Less

Submitted 16 June, 2017; originally announced June 2017.

Journal ref: Phys. Rev. B 96, 125437 (2017)

Ultra-compact injection terahertz laser using the resonant inter-layer radiative transitions in multi-graphene-layer structure

Authors: Alexander A. Dubinov, Andrey Bylinkin, Vladimir Ya. Aleshkin, Victor Ryzhii, Taiichi Otsuji, Dmitry Svintsov

Abstract: The optimization of laser resonators represents a crucial issue for the design of terahertz semiconductor lasers with high gain and low absorption loss. In this paper, we put forward and optimize the surface plasmonic metal waveguide geometry for the recently proposed terahertz injection laser based on resonant radiative transitions between tunnel-coupled grapheme layers. We find an optimal number… ▽ More The optimization of laser resonators represents a crucial issue for the design of terahertz semiconductor lasers with high gain and low absorption loss. In this paper, we put forward and optimize the surface plasmonic metal waveguide geometry for the recently proposed terahertz injection laser based on resonant radiative transitions between tunnel-coupled grapheme layers. We find an optimal number of active graphene layer pairs corresponding to the maximum net modal gain. The maximum gain increases with frequency and can be as large as ~ 500 cm-1 at 8 THz, while the threshold length of laser resonator can be as small as ~ 50 mkm. Our findings substantiate the possibility of ultra-compact voltage-tunable graphene-based lasers operating at room temperature. △ Less

Submitted 29 November, 2016; originally announced November 2016.

Comments: 11 pages, 6 figures

Amplified-reflection plasmon instabilities in grating-gate plasmonic crystals

Authors: Aleksandr S. Petrov, Dmitry Svintsov, Victor Ryzhii, Michael S. Shur

Abstract: We identify a possible mechanism of the plasmon instabilities in periodically gated two-dimensional electron systems with a modulated electron density (plasmonic crystals) under direct current. The instability occurs due to the amplified reflection of the small density perturbations from the gated/ungated boundaries under the proper phase matching conditions between the crystal unit cells. Based o… ▽ More We identify a possible mechanism of the plasmon instabilities in periodically gated two-dimensional electron systems with a modulated electron density (plasmonic crystals) under direct current. The instability occurs due to the amplified reflection of the small density perturbations from the gated/ungated boundaries under the proper phase matching conditions between the crystal unit cells. Based on the transfer-matrix formalism, we derive the generic dispersion equation for the travelling plasmons in these structures. Its solution in the hydrodynamic limit shows that the threshold drift velocity for the instability can be tuned below the plasmon phase and carrier saturation velocities, and the plasmon increment can exceed the collisional damping rate typical to III-V semiconductors at 77 K and graphene at room temperature. △ Less

Submitted 22 October, 2016; originally announced October 2016.

Comments: 8 pages, 6 figures, 1 appendix

Journal ref: Phys. Rev. B 95, 045405 (2017)

Infrared photodetectors based on graphene van der Waals heterostructures

Authors: V. Ryzhii, M. Ryzhii, D. Svintsov, V. Leiman, V. Mitin, M. S. Shur, T. Otsuji

Abstract: We propose and evaluate the graphene layer (GL) infrared photodetectors (GLIPs) based on the van der Waals (vdW) heterostructures with the radiation absorbing GLs. The operation of the GLIPs is associated with the electron photoexcitation from the GL valence band to the continuum states above the inter-GL barriers (either via tunneling or direct transitions to the continuum states). Using the deve… ▽ More We propose and evaluate the graphene layer (GL) infrared photodetectors (GLIPs) based on the van der Waals (vdW) heterostructures with the radiation absorbing GLs. The operation of the GLIPs is associated with the electron photoexcitation from the GL valence band to the continuum states above the inter-GL barriers (either via tunneling or direct transitions to the continuum states). Using the developed device model, we calculate the photodetector characteristics as functions of the GL-vdW heterostructure parameters. We show that due to a relatively large efficiency of the electron photoexcitation and low capture efficiency of the electrons propagating over the barriers in the inter-GL layers, GLIPs should exhibit the elevated photoelectric gain and detector responsivity as well as relatively high detectivity. The possibility of high-speed operation, high conductivity, transparency of the GLIP contact layers, and the sensitivity to normally incident IR radiation provides additional potential advantages in comparison with other IR photodetectors. In particular, the proposed GLIPs can compete with unitravelling-carrier photodetectors. △ Less

Submitted 5 September, 2016; originally announced September 2016.

Comments: 14 pages, 7 figures

Plasmons in tunnel-coupled graphene layers: backward waves with quantum cascade gain

Authors: Dmitry Svintsov, Zhanna Devizorova, Taiichi Otsuji, Victor Ryzhii

Abstract: Plasmons in van der Waals heterostructures comprised of graphene and related layered materials demonstrate deep subwavelength confinement and large propagation length. In this letter, we show that graphene-insulator-graphene tunnel structures can serve as plasmonic gain media. The gain stems from the stimulated electron tunneling accompanied by the emission of coherent plasmons under interlayer po… ▽ More Plasmons in van der Waals heterostructures comprised of graphene and related layered materials demonstrate deep subwavelength confinement and large propagation length. In this letter, we show that graphene-insulator-graphene tunnel structures can serve as plasmonic gain media. The gain stems from the stimulated electron tunneling accompanied by the emission of coherent plasmons under interlayer population inversion. The probability of tunneling with plasmon emission appears to be resonantly large at certain values of frequency and interlayer voltage corresponding to the transitions between electron states with collinear momenta - a feature unique to the linear band structure of graphene. The dispersion of plasmons undergoes a considerable transformation due to the tunneling as well, demonstrating negative group velocity in several frequency ranges. △ Less

Submitted 13 March, 2016; originally announced March 2016.

Comments: 13 pages, 10 figures. arXiv admin note: text overlap with arXiv:1509.03776

Journal ref: Phys. Rev. B 94, 115301 (2016)

Emission and amplification of surface plasmons in resonant - tunneling van der Waals heterostructures

Authors: D. Svintsov, Zh. Devizorova, T. Otsuji, V. Ryzhii

Abstract: We predict a new mechanism of surface plasmon amplification in graphene-insulator-graphene van der Waals heterostructures. The amplification occurs upon the stimulated interlayer electron tunneling accompanied by the emission of a coherent plasmon. The quantum-mechanical calculations of the non-local high-frequency tunnel conductivity show that a relative smallness of the tunneling exponent can be… ▽ More We predict a new mechanism of surface plasmon amplification in graphene-insulator-graphene van der Waals heterostructures. The amplification occurs upon the stimulated interlayer electron tunneling accompanied by the emission of a coherent plasmon. The quantum-mechanical calculations of the non-local high-frequency tunnel conductivity show that a relative smallness of the tunneling exponent can be compensated by a strong resonance due to the enhanced tunneling between electron states with collinear momenta in the neighboring graphene layers. With the optimal selection of the barrier layer, the surface plasmon gain due to the inelastic tunneling can compensate or even exceed the loss due to both Drude and interband absorption. The tunneling emission of the surface plasmons is robust against a slight twist of the graphene layers and might explain the electroluminescence from the tunnel-coupled graphene layers observed in the recent experiments. △ Less

Submitted 12 September, 2015; originally announced September 2015.

Comments: 10 pages, 3 figures

Abrupt current switching in graphene bilayer tunnel transistors enabled by van Hove singularities

Authors: G. Alymov, V. Vyurkov, V. Ryzhii, D. Svintsov

Abstract: In a continuous search for the energy-efficient electronic switches, a great attention is focused on tunnel field-effect transistors (TFETs) demonstrating an abrupt dependence of the source-drain current on the gate voltage. Among all TFETs, those based on one-dimensional (1D) semiconductors exhibit the steepest current switching due to the singular density of states near the band edges, though th… ▽ More In a continuous search for the energy-efficient electronic switches, a great attention is focused on tunnel field-effect transistors (TFETs) demonstrating an abrupt dependence of the source-drain current on the gate voltage. Among all TFETs, those based on one-dimensional (1D) semiconductors exhibit the steepest current switching due to the singular density of states near the band edges, though the current in 1D structures is pretty low. In this paper, we propose a TFET based on 2D graphene bilayer which demonstrates a record steep subthreshold slope enabled by van Hove singularities in the density of states near the edges of conduction and valence bands. Our simulations show the accessibility of 3.5 x 10$^4$ ON/OFF current ratio with 150 mV gate voltage swing, and a maximum subthreshold slope of (20 μV/dec)$^{-1}$ just above the threshold. The high ON-state current of 0.8 mA/μm is enabled by a narrow (~ 0.3 eV) extrinsic band gap, while the smallness of the leakage current is due to an all-electrical doping of the source and drain contacts which suppresses the band-tailing and trap-assisted tunneling. △ Less

Submitted 16 January, 2016; v1 submitted 9 August, 2015; originally announced August 2015.

Negative terahertz conductivity in disordered graphene bilayers with population inversion

Authors: D. Svintsov, T. Otsuji, V. Mitin, M. S. Shur, V. Ryzhii

Abstract: The gapless energy band spectra make the structures based on graphene and graphene bilayers with the population inversion created by optical or injection pumping to be promising media for the interband terahertz (THz) lasing. However, a strong intraband absorption at THz frequencies still poses a challenge for efficient THz lasing. In this paper, we show that in the pumped graphene bilayer struct… ▽ More The gapless energy band spectra make the structures based on graphene and graphene bilayers with the population inversion created by optical or injection pumping to be promising media for the interband terahertz (THz) lasing. However, a strong intraband absorption at THz frequencies still poses a challenge for efficient THz lasing. In this paper, we show that in the pumped graphene bilayer structures, the indirect interband radiative transitions accompanied by scattering of carriers caused by disorder can provide a substantial negative contribution to the THz conductivity (together with the direct interband transitions). In the graphene bilayer structures on high-$κ$ substrates with point charged defects, these transitions almost fully compensate the losses due to the intraband (Drude) absorption. We also demonstrate that the indirect interband contribution to the THz conductivity in a graphene bilayer with the extended defects (such as the charged impurity clusters, surface corrugation, and nanoholes) can surpass by several times the fundamental limit associated with the direct interband transitions and the Drude conductivity. These predictions can affect the strategy of the graphene-based THz laser implementation. △ Less

Submitted 4 February, 2015; originally announced February 2015.

Comments: 5 pages, 4 figures

Full loss compensation in hybrid plasmonic waveguides under electrical pumping

Authors: Dmitry A. Svintsov, Aleksey V. Arsenin, Dmitry Yu. Fedyanin

Abstract: Surface plasmon polaritons (SPPs) give an opportunity to break the diffraction limit and design nanoscale optical components, however their practical implementation is hindered by high ohmic losses in a metal. Here, we propose a novel approach for efficient SPP amplification under electrical pumping in a deep-subwavelength metal-insulator-semiconductor waveguiding geometry and numerically demonstr… ▽ More Surface plasmon polaritons (SPPs) give an opportunity to break the diffraction limit and design nanoscale optical components, however their practical implementation is hindered by high ohmic losses in a metal. Here, we propose a novel approach for efficient SPP amplification under electrical pumping in a deep-subwavelength metal-insulator-semiconductor waveguiding geometry and numerically demonstrate full compensation for the SPP propagation losses in the infrared at an exceptionally low pump current density of 0.8 kA/cm$^2$. This value is an order of magnitude lower than in the previous studies owing to the thin insulator layer between a metal and a semiconductor, which allows injection of minority carriers and blocks majority carriers reducing the leakage current to nearly zero. The presented results provide insight into lossless SPP guiding and development of future high dense nanophotonic and optoelectronic circuits. △ Less

Submitted 15 January, 2015; originally announced January 2015.

Comments: 5 figures

Journal ref: Optics Express, vol. 23, iss. 15, pp. 19358-19375 (2015)

Graphene vertical cascade interband terahertz and infrared photodetectors

Authors: V. Ryzhii, T. Otsuji, M. Ryzhii, V. Ya. Aleshkin, A. A. Dubinov, D. Svintsov, V. Mitin, M. S. Shur

Abstract: We propose and evaluate the vertical cascade terahertz and infrared photodetectors based on multiple-graphene-layer (GL) structures with thin tunnel barrier layers (made of tungsten disulfide or related materials). The photodetector operation is associated with the cascaded radiative electron transitions from the valence band in GLs to the conduction band in the neighboring GLs (interband- and int… ▽ More We propose and evaluate the vertical cascade terahertz and infrared photodetectors based on multiple-graphene-layer (GL) structures with thin tunnel barrier layers (made of tungsten disulfide or related materials). The photodetector operation is associated with the cascaded radiative electron transitions from the valence band in GLs to the conduction band in the neighboring GLs (interband- and inter-GL transitions). We calculate the spectral dependences of the responsivity and detectivity for the vertical cascade interband GL- photodetectors (I-GLPDs) with different number of GLs and doping levels at different bias voltages in a wide temperature range. We show the possibility of an effective manipulation of the spectral characteristics by the applied voltage. The spectral characteristics depend also on the GL doping level that opens up the prospects of using I-GLPDs in the multi-color systems. The advantages of I-GLPDs under consideration are associated with their sensitivity to the normal incident radiation, weak temperature dependence of the dark current as well as high speed of operation. The comparison of the proposed I-GLDs with the quantum-well intersubband photodectors demonstrates the superiority of the former, including a better detectivity at room temperature and a higher speed. The vertical cascade I-GLDs can also surpass the lateral p-i-n GLDs in speed. △ Less

Submitted 2 November, 2014; originally announced November 2014.

Comments: 10 pages, 12 figures

Negative dynamic Drude conductivity in pumped graphene

Authors: D. Svintsov, V. Ryzhii, T. Otsuji

Abstract: We theoretically reveal a new mechanism of light amplification in graphene under the conditions of interband population inversion. It is enabled by the indirect interband transitions, with the photon emission preceded or followed by the scattering on disorder. The emerging contribution to the optical conductivity, which we call the interband Drude conductivity, appears to be negative for the photo… ▽ More We theoretically reveal a new mechanism of light amplification in graphene under the conditions of interband population inversion. It is enabled by the indirect interband transitions, with the photon emission preceded or followed by the scattering on disorder. The emerging contribution to the optical conductivity, which we call the interband Drude conductivity, appears to be negative for the photon energies below the double quasi-Fermi energy of pumped electrons and holes. We find that for the Gaussian correlated distribution of scattering centers, the real part of the net Drude conductivity (interband plus intraband) can be negative in the terahertz and near-infrared frequency ranges, while the radiation amplification by a single graphene sheet can exceed 2.3%. △ Less

Submitted 29 August, 2014; originally announced August 2014.

Comments: 5 pages, 5 figures

Journal ref: Applied Physics Express vol. 7 p. 115101 (2014)