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X-ray and molecular dynamics study of the temperature-dependent structure of molten NaF-ZrF4
Authors:
Anubhav Wadehra,
Rajni Chahal,
Shubhojit Banerjee,
Alexander Levy,
Yifan Zhang,
Haoxuan Yan,
Daniel Olds,
Yu Zhong,
Uday Pal,
Stephen Lam,
Karl Ludwig
Abstract:
The local atomic structure of NaF-ZrF$_4$ (53-47 mol%) molten system and its evolution with temperature are examined with x-ray scattering measurements and compared with $ab-initio$ and Neural Network-based molecular dynamics (NNMD) simulations in the temperature range 515-700 °C. The machine-learning enhanced NNMD calculations offer improved efficiency while maintaining accuracy at higher distanc…
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The local atomic structure of NaF-ZrF$_4$ (53-47 mol%) molten system and its evolution with temperature are examined with x-ray scattering measurements and compared with $ab-initio$ and Neural Network-based molecular dynamics (NNMD) simulations in the temperature range 515-700 °C. The machine-learning enhanced NNMD calculations offer improved efficiency while maintaining accuracy at higher distances compared to ab-initio calculations. Looking at the evolution of the Pair Distribution Function with increasing temperature, a fundamental change in the liquid structure within the selected temperature range, accompanied by a slight decrease in overall correlation is revealed. NNMD calculations indicate the co-existence of three different fluorozirconate complexes: [ZrF$_6$]$^{2-}$, [ZrF$_7$]$^{3-}$, and [ZrF$_8$]$^{4-}$, with a temperature-dependent shift in the dominant coordination state towards a 6-coordinated Zr ion at 700°C. The study also highlights the metastability of different coordination structures, with frequent interconversions between 6 and 7 coordinate states for the fluorozirconate complex from 525 °C to 700 °C. Analysis of the Zr-F-Zr angular distribution function reveals the presence of both $"$edge-sharing$"$ and $"$corner-sharing$"$ fluorozirconate complexes with specific bond angles and distances in accord with previous studies, while the next-nearest neighbor cation-cation correlations demonstrate a clear preference for unlike cations as nearest-neighbor pairs, emphasizing non-random arrangement. These findings contribute to a comprehensive understanding of the complex local structure of the molten salt, providing insights into temperature-dependent preferences and correlations within the molten system.
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Submitted 9 March, 2024;
originally announced March 2024.
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Band Gap Engineering with Ultralarge Biaxial Strains in Suspended Monolayer MoS2
Authors:
David Lloyd,
Xinghui Liu,
Jason W. Christopher,
Lauren Cantley,
Anubhav Wadehra,
Brian L. Kim,
Bennett B. Goldberg,
Anna K. Swan,
J. Scott Bunch
Abstract:
We demonstrate the continuous and reversible tuning of the optical band gap of suspended monolayer MoS2 membranes by as much as 500 meV by applying very large biaxial strains. By using chemical vapor deposition (CVD) to grow crystals that are highly impermeable to gas, we are able to apply a pressure difference across suspended membranes to induce biaxial strains. We observe the effect of strain o…
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We demonstrate the continuous and reversible tuning of the optical band gap of suspended monolayer MoS2 membranes by as much as 500 meV by applying very large biaxial strains. By using chemical vapor deposition (CVD) to grow crystals that are highly impermeable to gas, we are able to apply a pressure difference across suspended membranes to induce biaxial strains. We observe the effect of strain on the energy and intensity of the peaks in the photoluminescence (PL) spectrum, and find a linear tuning rate of the optical band gap of 99 meV/%. This method is then used to study the PL spectra of bilayer and trilayer devices under strain, and to find the shift rates and Grüneisen parameters of two Raman modes in monolayer MoS2. Finally, we use this result to show that we can apply biaxial strains as large as 5.6% across micron sized areas, and report evidence for the strain tuning of higher level optical transitions.
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Submitted 15 August, 2016;
originally announced August 2016.
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Magnetic states and optical properties of single-layer carbon-doped hexagonal boron nitride
Authors:
Hyoungki Park,
Amita Wadehra,
John W. Wilkins,
Antonio H. Castro Neto
Abstract:
We show that carbon-doped hexagonal boron nitride (h-BN) has extraordinary properties with many possible applications. We demonstrate that the substitution-induced impurity states, associated with carbon atoms, and their interactions dictate the electronic structure and properties of C-doped h-BN. Furthermore, we show that stacking of localized impurity states in small C clusters embedded in h-BN…
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We show that carbon-doped hexagonal boron nitride (h-BN) has extraordinary properties with many possible applications. We demonstrate that the substitution-induced impurity states, associated with carbon atoms, and their interactions dictate the electronic structure and properties of C-doped h-BN. Furthermore, we show that stacking of localized impurity states in small C clusters embedded in h-BN forms a set of discrete energy levels in the wide gap of h-BN. The electronic structures of these C clusters have a plethora of applications in optics, magneto-optics, and opto-electronics.
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Submitted 15 May, 2012;
originally announced May 2012.
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Band offsets of semiconductor heterostructures: a hybrid density functional study
Authors:
Amita Wadehra,
Jeremy W. Nicklas,
John W. Wilkins
Abstract:
We demonstrate the accuracy of the hybrid functional HSE06 for computing band offsets of semiconductor alloy heterostructures. The highlight of this study is the computation of conduction band offsets with a reliability that has eluded standard density functional theory. A high-quality special quasirandom structure models an infinite random pseudobinary alloy for constructing heterostructures alon…
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We demonstrate the accuracy of the hybrid functional HSE06 for computing band offsets of semiconductor alloy heterostructures. The highlight of this study is the computation of conduction band offsets with a reliability that has eluded standard density functional theory. A high-quality special quasirandom structure models an infinite random pseudobinary alloy for constructing heterostructures along the (001) growth direction. Our excellent results for a variety of heterostructures establish HSE06's relevance to band engineering of high-performance electrical and optoelectronic devices.
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Submitted 15 July, 2010;
originally announced July 2010.
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Phase transformation in Si from semiconducting diamond to metallic beta-Sn phase in QMC and DFT under hydrostatic and anisotropic stress
Authors:
R. G. Hennig,
A. Wadehra,
K. P. Driver,
W. D. Parker,
C. J. Umrigar,
J. W. Wilkins
Abstract:
Silicon undergoes a phase transition from the semiconducting diamond phase to the metallic beta-Sn phase under pressure. We use quantum Monte Carlo calculations to predict the transformation pressure and compare the results to density functional calculations employing the LDA, PBE, PW91, WC, AM05, PBEsol and HSE06 exchange-correlation functionals. Diffusion Monte Carlo predicts a transition pressu…
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Silicon undergoes a phase transition from the semiconducting diamond phase to the metallic beta-Sn phase under pressure. We use quantum Monte Carlo calculations to predict the transformation pressure and compare the results to density functional calculations employing the LDA, PBE, PW91, WC, AM05, PBEsol and HSE06 exchange-correlation functionals. Diffusion Monte Carlo predicts a transition pressure of 14.0 +- 1.0 GPa slightly above the experimentally observed transition pressure range of 11.3 to 12.6 GPa. The HSE06 hybrid functional predicts a transition pressure of 12.4 GPa in excellent agreement with experiments. Exchange-correlation functionals using the local-density approximation and generalized-gradient approximations result in transition pressures ranging from 3.5 to 10.0 GPa, well below the experimental values. The transition pressure is sensitive to stress anisotropy. Anisotropy in the stress along any of the cubic axes of the diamond phase of silicon lowers the equilibrium transition pressure and may explain the discrepancy between the various experimental values as well as the small overestimate of the quantum Monte Carlo transition pressure.
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Submitted 16 June, 2010;
originally announced June 2010.
