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Circularly polarised electroluminescence from chiral excitons in vacuum-sublimed supramolecular semiconductor thin films
Authors:
Rituparno Chowdhury,
Marco D. Preuss,
Hwan-Hee Cho,
Joshua J. P. Thompson,
Samarpita Sen,
Tomi Baikie,
Pratyush Ghosh,
Yorrick Boeije,
Xian-Wei Chua,
Kai-Wei Chang,
Erjuan Guo,
Joost van der Tol,
Bart W. L. van den Bersselaar,
Andrea Taddeucci,
Nicolas Daub,
Daphne M. Dekker,
Scott T. Keene,
Ghislaine Vantomme,
Bruno Ehrler,
Stefan C. J. Meskers,
Akshay Rao,
Bartomeu Monserrat,
E. W. Meijer,
Richard H. Friend
Abstract:
Materials with chiral electronic structures are of great interest. We report a triazatruxene, TAT, molecular semiconductor with chiral alkyl side chains that crystallises from solution to form chirally-stacked columns with a helical pitch of 6 TATs (2.3 nm). These crystals show strong circularly polarised, CP, green photoluminescence, with dissymmetry of 24%. Electronic structure calculations usin…
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Materials with chiral electronic structures are of great interest. We report a triazatruxene, TAT, molecular semiconductor with chiral alkyl side chains that crystallises from solution to form chirally-stacked columns with a helical pitch of 6 TATs (2.3 nm). These crystals show strong circularly polarised, CP, green photoluminescence, with dissymmetry of 24%. Electronic structure calculations using the full crystal structure, show that this chiral stacking associates angular momentum to the valence and conduction states and thus gives rise to the observed CP luminescence. Free-standing crystals are not useful for active semiconductor devices, but we have discovered that co-sublimation of TAT as the guest in a structurally mismatched host enables the fabrication of thin films where the chiral crystallization is achieved in-situ by thermally-triggered nano-phase segregation of dopant and host whilst preserving the integrity of the film. This enables fabrication of bright (green) organic light-emitting diodes with unexpectedly high external quantum efficiencies of up to 16% and electroluminescence dissymmetries above 10%. These materials and this process method offer significant application potential in spintronics, optical displays and multidimensional optoelectronics.
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Submitted 25 August, 2024;
originally announced August 2024.
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Optimization of Balanced Detector for Coherent Receiver on Generic InP Platform by PSO
Authors:
Dhiman Nag,
Weiming Yao,
Jos J. G. M. van der Tol
Abstract:
Balanced photodetector (BPD) is an important component for high-speed coherent receiver. Optimization strategy of waveguide-based multi-quantum well (MQW) BPDs, operating at 1550 nm is demonstrated on generic InP platform. Design parameters of BPD are optimized towards achieving the highest bandwidth for a responsivity through an algorithm based on Particle Swarm Optimization (PSO). We do so by es…
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Balanced photodetector (BPD) is an important component for high-speed coherent receiver. Optimization strategy of waveguide-based multi-quantum well (MQW) BPDs, operating at 1550 nm is demonstrated on generic InP platform. Design parameters of BPD are optimized towards achieving the highest bandwidth for a responsivity through an algorithm based on Particle Swarm Optimization (PSO). We do so by establishing an equivalent circuit model of BPD and analyzing its opto-electronic transfer function through numerical modelling. We address the major bottlenecks of high-speed BPDs: transit time of generated carriers and RC loading in our model. The algorithm is able to provide multiple combinations of design parameters with the same output characteristics. Design methodology to integrate laser with optimized BPD is presented to successfully implement coherent receiver.
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Submitted 19 September, 2023;
originally announced September 2023.
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Broadband Multifunctional Plasmonic Polarization Converter based on Multimode Interference Coupler
Authors:
Hamed Pezeshki,
Bert Koopmans,
Jos J. G. M. van der Tol
Abstract:
We propose a multifunctional integrated plasmonic-photonic polarization converter for polarization demultiplexing in an indium-phosphide membrane on silicon platform. Using a compact 1$\times$4 multimode interference coupler, this device can provide simultaneous half-wave plate and quarter-wave plate (HWP and QWP) functionalities, where the latter generates two quasi-circular polarized beams with…
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We propose a multifunctional integrated plasmonic-photonic polarization converter for polarization demultiplexing in an indium-phosphide membrane on silicon platform. Using a compact 1$\times$4 multimode interference coupler, this device can provide simultaneous half-wave plate and quarter-wave plate (HWP and QWP) functionalities, where the latter generates two quasi-circular polarized beams with opposite spins and topological charges of $l$ = $\pm$1. Our device employs a two-section HWP to obtain a very large conversion efficiency of $\geq$ 91% over the entire C to U telecom bands, while it offers a conversion efficiency of $\geq$ 95% over $\sim$ 86% of the C to U bands. Our device also illustrates QWP functionality, where the transmission contrast between the transverse electric and transverse magnetic modes is $\approx$ 0 dB over the whole C band and 55% of the C to U bands. We expect this device can be a promising building block for the realization of ultracompact on-chip polarization demultiplexing and lab-on-a-chip biosensing platforms. Finally, our proposed device allows the use of the polarization and angular momentum degrees of freedom, which makes it attractive for quantum information processing.
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Submitted 20 October, 2022;
originally announced October 2022.
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Design of an integrated hybrid plasmonic-photonic device for all-optical switching and reading of spintronic memory
Authors:
Hamed Pezeshki,
Pingzhi Li,
Reinoud Lavrijsen,
Martijn Heck,
Erwin Bente,
Jos van der Tol,
Bert Koopmans
Abstract:
We introduce a novel integrated hybrid plasmonic-photonic device for all-optical switching and reading of nanoscale ferrimagnet bits. The racetrack memory made of synthetic ferrimagnetic material with a perpendicular magnetic anisotropy is coupled on to a photonic waveguide onto the indium phosphide membrane on silicon platform. The device which is composed of a double V-shaped gold plasmonic nano…
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We introduce a novel integrated hybrid plasmonic-photonic device for all-optical switching and reading of nanoscale ferrimagnet bits. The racetrack memory made of synthetic ferrimagnetic material with a perpendicular magnetic anisotropy is coupled on to a photonic waveguide onto the indium phosphide membrane on silicon platform. The device which is composed of a double V-shaped gold plasmonic nanoantenna coupled with a photonic crystal cavity can enable switching and reading of the magnetization state in nanoscale magnetic bits by enhancing the absorbed energy density and polar magneto-optical Kerr effect (PMOKE) locally beyond the diffraction limit. Using a three-dimensional finite-difference time-domain method, we numerically show that our device can switch and read the magnetization state in targeted bits down to ~100 nm in the presence of oppositely magnetized background regions in the racetrack with widths of 30 to 120 nm, clearly outperforming a bare photonic waveguide. Our hybrid device tackles the challenges of nonlinear absorption in the waveguide, weak PMOKE, and size mismatch between spintronics and integrated photonics. Thus, it provides missing link between the integrated photonics and nanoscale spintronics, expediting the development of ultrafast and energy efficient advanced on-chip applications.
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Submitted 30 September, 2022;
originally announced September 2022.
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Optical Reading of Nanoscale Magnetic Bits in an Integrated Photonic Platform
Authors:
Hamed Pezeshki,
Pingzhi Li,
Reinoud Lavrijsen,
Jos J. G. M. van der Tol,
Bert Koopmans
Abstract:
In this paper, we propose a compact integrated hybrid plasmonic-photonic device for optical reading of nanoscale magnetic bits with perpendicular magnetic anisotropy in a magnetic racetrack on top of a photonic waveguide on the indium phosphide membrane on silicon platform. The hybrid device is constructed by coupling a doublet of V-shaped gold plasmonic nanoantennas on top of the indium phosphide…
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In this paper, we propose a compact integrated hybrid plasmonic-photonic device for optical reading of nanoscale magnetic bits with perpendicular magnetic anisotropy in a magnetic racetrack on top of a photonic waveguide on the indium phosphide membrane on silicon platform. The hybrid device is constructed by coupling a doublet of V-shaped gold plasmonic nanoantennas on top of the indium phosphide waveguide. By taking advantage of the localized surface plasmons, our hybrid device can enable detection of the magnetization state in magnetic bits beyond the diffraction limit of light and enhance the polar magneto-optical Kerr effect (PMOKE). We further illustrate how combining the hybrid device with a plasmonic polarization rotator provides magneto-optical read-out by transforming the PMOKE-induced polarization change into an intensity variation of the waveguide mode. According to the simulation results based on a three-dimensional finite-difference time-domain method, the hybrid device can detect the magnetization states in targeted bits in a magnetic racetrack medium down to ~ 100x100 nm2, regardless of the magnetization state of the rest of the racetrack with a relative intensity contrast of greater than 0.5% for a ~ 200x100 nm2 magnetic bit. We believe our hybrid device can be an enabling technology that can connect integrated photonics with nanoscale spintronics, paving the way toward ultrafast and energy efficient advanced on-chip applications.
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Submitted 4 August, 2022;
originally announced August 2022.
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All-optical switching due to state-filling in quantum dots
Authors:
R. Prasanth,
J. E. M. Haverkort,
A. Deepthy,
E. W. Bogaart,
J. J. G. M. van der Tol,
E. A. Patent,
G. Zhao,
Q. Gong,
P. J. van Veldhoven,
R. Noetzel,
J. H. Wolter
Abstract:
We report all-optical switching due to state-filling in quantum dots (QDs) within a Mach-Zehnder Interferometric (MZI) switch. The MZI was fabricated using InGaAsP/InP waveguides containing a single layer of InAs/InP QDs. A 1530-1570 nm probe beam is switched by optical excitation of one MZI-arm from the top. By exciting below the InGaAsP bandgap, we prove that the refractive index nonlinearity…
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We report all-optical switching due to state-filling in quantum dots (QDs) within a Mach-Zehnder Interferometric (MZI) switch. The MZI was fabricated using InGaAsP/InP waveguides containing a single layer of InAs/InP QDs. A 1530-1570 nm probe beam is switched by optical excitation of one MZI-arm from the top. By exciting below the InGaAsP bandgap, we prove that the refractive index nonlinearity is only due to the QDs. The switching efficiency is 2 rad/(microW absorbed power). Probe wavelength insensitivity was obtained using a broad distribution of QDs.
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Submitted 18 October, 2004;
originally announced October 2004.