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Antiferromagnetic order in a layered magnetic topological insulator MnBi$_2$Se$_4$ probed by resonant soft x-ray scattering
Authors:
Xiang Chen,
Alejandro Ruiz,
Alexander J. Bishop,
Brandon Gunn,
Rourav Basak,
Tiancong Zhu,
Yu He,
Mayia Vranas,
Eugen Weschke,
Roland K. Kawakami,
Robert J. Birgeneau,
Alex Frano
Abstract:
The quasi-two-dimensional magnetic topological insulator MnBi$_2$Se$_4$, stabilized via non-equilibrium molecular beam epitaxy, is investigated by resonant soft x-ray scattering. Kiessig fringes are observed, confirming a high sample quality and a thin film thickness of 10 septuple layers ($\sim$13 nm). An antiferromagnetic Bragg peak is observed at the structurally forbidden reflection, whose mag…
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The quasi-two-dimensional magnetic topological insulator MnBi$_2$Se$_4$, stabilized via non-equilibrium molecular beam epitaxy, is investigated by resonant soft x-ray scattering. Kiessig fringes are observed, confirming a high sample quality and a thin film thickness of 10 septuple layers ($\sim$13 nm). An antiferromagnetic Bragg peak is observed at the structurally forbidden reflection, whose magnetic nature is validated by studying its temperature, energy, and polarization dependence. Through a detailed analysis, an A-type antiferromagetic order with in-plane moments is implied. This alternative spin structure in MnBi$_2$Se$_4$, in contrast to the Ising antiferromagnetic states in other magnetic topological insulators, might be relevant for hosting new topological states.
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Submitted 3 June, 2024;
originally announced June 2024.
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Tuning the Curie temperature of a 2D magnet/topological insulator heterostructure to above room temperature by epitaxial growth
Authors:
Wenyi Zhou,
Alexander J. Bishop,
Xiyue S. Zhang,
Katherine Robinson,
Igor Lyalin,
Ziling Li,
Ryan Bailey-Crandell,
Thow Min Jerald Cham,
Shuyu Cheng,
Yunqiu Kelly Luo,
Daniel C. Ralph,
David A. Muller,
Roland K. Kawakami
Abstract:
Heterostructures of two-dimensional (2D) van der Waals (vdW) magnets and topological insulators (TI) are of substantial interest as candidate materials for efficient spin-torque switching, quantum anomalous Hall effect, and chiral spin textures. However, since many of the vdW magnets have Curie temperatures below room temperature, we want to understand how materials can be modified to stabilize th…
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Heterostructures of two-dimensional (2D) van der Waals (vdW) magnets and topological insulators (TI) are of substantial interest as candidate materials for efficient spin-torque switching, quantum anomalous Hall effect, and chiral spin textures. However, since many of the vdW magnets have Curie temperatures below room temperature, we want to understand how materials can be modified to stabilize their magnetic ordering to higher temperatures. In this work, we utilize molecular beam epitaxy to systematically tune the Curie temperature ($T_C$) in thin film Fe$_3$GeTe$_2$/Bi$_2$Te$_3$ from bulk-like values ($\sim$220 K) to above room temperature by increasing the growth temperature from 300 $^\circ$C to 375 $^\circ$C. For samples grown at 375 $^\circ$C, cross-sectional scanning transmission electron microscopy (STEM) reveals the spontaneous formation of different Fe$_m$Ge$_n$Te$_2$ compositions (e.g. Fe$_5$Ge$_2$Te$_2$ and Fe$_7$Ge$_6$Te$_2$) as well as intercalation in the vdW gaps, which are possible origins of the enhanced Curie temperature. This observation paves the way for developing various Fe$_m$Ge$_n$Te$_2$/TI heterostructures with novel properties.
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Submitted 25 August, 2023;
originally announced August 2023.
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Epitaxial Kagome Thin Films as a Platform for Topological Flat Bands
Authors:
Shuyu Cheng,
M. Nrisimhamurty,
Tong Zhou,
Nuria Bagues,
Wenyi Zhou,
Alexander J. Bishop,
Igor Lyalin,
Chris Jozwiak,
Aaron Bostwick,
Eli Rotenberg,
David W. McComb,
Igor Zutic,
Roland K. Kawakami
Abstract:
Systems with flat bands are ideal for studying strongly correlated electronic states and related phenomena. Among them, kagome-structured metals such as CoSn have been recognized as promising candidates due to the proximity between the flat bands and the Fermi level. A key next step will be to realize epitaxial kagome thin films with flat bands to enable tuning of the flat bands across the Fermi l…
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Systems with flat bands are ideal for studying strongly correlated electronic states and related phenomena. Among them, kagome-structured metals such as CoSn have been recognized as promising candidates due to the proximity between the flat bands and the Fermi level. A key next step will be to realize epitaxial kagome thin films with flat bands to enable tuning of the flat bands across the Fermi level via electrostatic gating or strain. Here we report the band structures of epitaxial CoSn thin films grown directly on insulating substrates. Flat bands are observed using synchrotron-based angle-resolved photoemission spectroscopy (ARPES). The band structure is consistent with density functional theory (DFT) calculations, and the transport properties are quantitatively explained by the band structure and semiclassical transport theory. Our work paves the way to realize flat band-induced phenomena through fine-tuning of flat bands in kagome materials.
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Submitted 28 July, 2023;
originally announced July 2023.
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Scanning Tunneling Microscopy Study of Epitaxial Fe3GeTe2 Monolayers on Bi2Te3
Authors:
Brad M. Goff,
Alexander J. Bishop,
Wenyi Zhou,
Ryan Bailey-Crandell,
Katherine Robinson,
Roland K. Kawakami,
Jay A. Gupta
Abstract:
Introducing magnetism to the surface state of topological insulators, such as Bi2Te3, can lead to a variety of interesting phenomena. We use scanning tunneling microscopy (STM) to study a single quintuple layer (QL) of the van der Waals magnet Fe3GeTe2 (FGT) that is grown on Bi2Te3 via molecular beam epitaxy. STM topographic images show that the FGT grows as free-standing islands on Bi2Te3 and out…
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Introducing magnetism to the surface state of topological insulators, such as Bi2Te3, can lead to a variety of interesting phenomena. We use scanning tunneling microscopy (STM) to study a single quintuple layer (QL) of the van der Waals magnet Fe3GeTe2 (FGT) that is grown on Bi2Te3 via molecular beam epitaxy. STM topographic images show that the FGT grows as free-standing islands on Bi2Te3 and outwards from Bi2Te3 steps. Atomic resolution imaging shows atomic lattices of 390 +- 10 pm for FGT and 430 +- 10 pm for Bi2Te3, consistent with the respective bulk crystals. A moiré pattern is observed on FGT regions with a periodicity of 4.3 +- 0.4 nm that can be attributed solely to this lattice mismatch and thus indicates zero rotational misalignments. While most of the surface is covered by a single QL of the FGT, there are small double QL regions, as well as regions with distinct chemical terminations due to an incomplete QL. The most common partial QL surface termination is the FeGe layer, in which the top two atomic layers are missing. This termination has a distinctive electronic structure and a (sqrt3 x sqrt3)R30 reconstruction overlaid on the moiré pattern in STM images. Magnetic circular dichroism (MCD) measurements confirm these thin FGT films are ferromagnetic with TC ~190 K.
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Submitted 20 November, 2023; v1 submitted 17 March, 2023;
originally announced March 2023.
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Atomic Layer Epitaxy of Kagome Magnet Fe${_3}$Sn${_2}$ and Sn-modulated Heterostructures
Authors:
Shuyu Cheng,
Igor Lyalin,
Alexander J. Bishop,
Roland K. Kawakami,
Binbin Wang,
Núria Bagués,
David W. McComb
Abstract:
Magnetic materials with kagome crystal structure exhibit rich physics such as frustrated magnetism, skyrmion formation, topological flat bands, and Dirac/Weyl points. Until recently, most studies on kagome magnets have been performed on bulk crystals or polycrystalline films. Here we report the atomic layer molecular beam epitaxy synthesis of high-quality thin films of topological kagome magnet Fe…
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Magnetic materials with kagome crystal structure exhibit rich physics such as frustrated magnetism, skyrmion formation, topological flat bands, and Dirac/Weyl points. Until recently, most studies on kagome magnets have been performed on bulk crystals or polycrystalline films. Here we report the atomic layer molecular beam epitaxy synthesis of high-quality thin films of topological kagome magnet Fe${_3}$Sn${_2}$. Structural and magnetic characterization of Fe${_3}$Sn${_2}$ on epitaxial Pt(111) identifies highly ordered films with c-plane orientation and an in-plane magnetic easy axis. Studies of the local magnetic structure by anomalous Nernst effect imaging reveals in-plane oriented micrometer size domains. Superlattice structures consisting of Fe${_3}$Sn${_2}$ and Fe${_3}$Sn are also synthesized by atomic layer molecular beam epitaxy, demonstrating the ability to modulate the sample structure at the atomic level. The realization of high-quality films by atomic layer molecular beam epitaxy opens the door to explore the rich physics of this system and investigate novel spintronic phenomena by interfacing Fe${_3}$Sn${_2}$ with other materials.
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Submitted 15 March, 2022;
originally announced March 2022.
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Kinetically-controlled epitaxial growth of Fe$_3$GeTe$_2$ van der Waals ferromagnetic films
Authors:
Wenyi Zhou,
Alexander J. Bishop,
Menglin Zhu,
Igor Lyalin,
Robert C. Walko,
Jay A. Gupta,
Jinwoo Hwang,
Roland K. Kawakami
Abstract:
We demonstrate that kinetics play an important role in the epitaxial growth of Fe$_3$GeTe$_2$ (FGT) van der Waals (vdW) ferromagnetic films by molecular beam epitaxy. By varying the deposition rate, we control the formation or suppression of an initial tellurium-deficient non-van der Waals phase (Fe$_3$Ge$_2$) prior to realizing epitaxial growth of the vdW FGT phase. Using cross-sectional scanning…
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We demonstrate that kinetics play an important role in the epitaxial growth of Fe$_3$GeTe$_2$ (FGT) van der Waals (vdW) ferromagnetic films by molecular beam epitaxy. By varying the deposition rate, we control the formation or suppression of an initial tellurium-deficient non-van der Waals phase (Fe$_3$Ge$_2$) prior to realizing epitaxial growth of the vdW FGT phase. Using cross-sectional scanning transmission electron microscopy and scanning tunneling microscopy, we optimize the FGT films to have atomically smooth surfaces and abrupt interfaces with the Ge(111) substrate. The magnetic properties of our high quality material are confirmed through magneto-optic, magnetotransport, and spin-polarized STM studies. Importantly, this demonstrates how the interplay of energetics and kinetics can help tune the re-evaporation rate of chalcogen atoms and interdiffusion from the underlayer, which paves the way for future studies of van der Waals epitaxy.
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Submitted 8 February, 2022;
originally announced February 2022.
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Epitaxial Growth and Domain Structure Imaging of Kagome Magnet Fe$_3$Sn$_2$
Authors:
Shuyu Cheng,
Igor Lyalin,
Alexander J. Bishop,
Roland K. Kawakami
Abstract:
Magnetic materials with kagome crystal structure exhibit rich physics such as frustrated magnetism, skyrmion formation, topological flat bands, and Dirac/Weyl points. Until recently, most studies on kagome magnets have been performed on bulk crystals or polycrystalline films. Here we report the synthesis of high-quality epitaxial films of topological kagome magnet Fe$_3$Sn$_2$ by atomic layer mole…
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Magnetic materials with kagome crystal structure exhibit rich physics such as frustrated magnetism, skyrmion formation, topological flat bands, and Dirac/Weyl points. Until recently, most studies on kagome magnets have been performed on bulk crystals or polycrystalline films. Here we report the synthesis of high-quality epitaxial films of topological kagome magnet Fe$_3$Sn$_2$ by atomic layer molecular beam epitaxy. Structural and magnetic characterization of Fe$_3$Sn$_2$ on epitaxial Pt(111) identifies highly ordered films with c-plane orientation and an in-plane magnetic easy axis. Studies of the local magnetic structure by anomalous Nernst effect imaging reveals in-plane oriented micrometer size domains. The realization of high-quality films by atomic layer molecular beam epitaxy opens the door to explore the rich physics of this system and investigate novel spintronic phenomena by interfacing Fe$_3$Sn$_2$ with other materials.
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Submitted 25 May, 2021;
originally announced May 2021.
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Magnetic Properties and Electronic Structure of Magnetic Topological Insulator MnBi$_2$Se$_4$
Authors:
Tiancong Zhu,
Alexander J. Bishop,
Tong Zhou,
Menglin Zhu,
Dante J. O'Hara,
Alexander A. Baker,
Shuyu Cheng,
Robert C. Walko,
Jacob J. Repicky,
Jay A. Gupta,
Chris M. Jozwiak,
Eli Rotenberg,
Jinwoo Hwang,
Igor Žutić,
Roland K. Kawakami
Abstract:
The intrinsic magnetic topological insulators MnBi$_2$X$_4$ (X = Se, Te) are promising candidates in realizing various novel topological states related to symmetry breaking by magnetic order. Although much progress had been made in MnBi$_2$Te$_4$, the study of MnBi$_2$Se$_4$ has been lacking due to the difficulty of material synthesis of the desired trigonal phase. Here, we report the synthesis of…
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The intrinsic magnetic topological insulators MnBi$_2$X$_4$ (X = Se, Te) are promising candidates in realizing various novel topological states related to symmetry breaking by magnetic order. Although much progress had been made in MnBi$_2$Te$_4$, the study of MnBi$_2$Se$_4$ has been lacking due to the difficulty of material synthesis of the desired trigonal phase. Here, we report the synthesis of multilayer trigonal MnBi$_2$Se$_4$ with alternating-layer molecular beam epitaxy. Atomic-resolution scanning transmission electron microscopy (STEM) and scanning tunneling microscopy (STM) identify a well-ordered multilayer van der Waals (vdW) crystal with septuple-layer base units in agreement with the trigonal structure. Systematic thickness-dependent magnetometry studies illustrate the layered antiferromagnetic ordering as predicted by theory. Angle-resolved photoemission spectroscopy (ARPES) reveals the gapless Dirac-like surface state of MnBi$_2$Se$_4$, which demonstrates that MnBi$_2$Se$_4$ is a topological insulator above the magnetic ordering temperature. These systematic studies show that MnBi$_2$Se$_4$ is a promising candidate for exploring the rich topological phases of layered antiferromagnetic topological insulators.
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Submitted 17 March, 2020;
originally announced March 2020.
