Showing 1–50 of 64 results for author: Lewis, L

Integrated ab initio modelling of atomic order and magnetic anisotropy for rare-earth-free magnet design: effects of alloying additions in $\mathrm{L}1_0$ FeNi

Authors: Christopher D. Woodgate, Laura H. Lewis, Julie B. Staunton

Abstract: We describe an integrated modelling approach to accelerate the search for novel, single-phase, multicomponent materials with high magnetocrystalline anisotropy (MCA). For a given system we predict the nature of atomic ordering, its dependence on the magnetic state, and then proceed to describe the consequent MCA. Crucially, within our modelling framework, the same ab initio description of the mate… ▽ More We describe an integrated modelling approach to accelerate the search for novel, single-phase, multicomponent materials with high magnetocrystalline anisotropy (MCA). For a given system we predict the nature of atomic ordering, its dependence on the magnetic state, and then proceed to describe the consequent MCA. Crucially, within our modelling framework, the same ab initio description of the material's electronic structure determines both aspects. We demonstrate this holistic method by studying the effects of alloying additions in FeNi, examining systems with the general stoichiometry Fe$_4$Ni$_3X$, including $X = $ Pt, Pd, Al, and Co. The atomic ordering behaviour predicted on adding these elements, fundamental for determining a material's MCA, is rich and varied. Equiatomic FeNi has been reported to require ferromagnetic order to establish the tetragonal $\mathrm{L}1_0$ order suited for significant MCA. Our results show that when alloying additions are included in this material, annealing in an applied magnetic field and/or below a material's Curie temperature may also promote tetragonal order, along with an appreciable effect on the predicted MCA. △ Less

Submitted 5 January, 2024; originally announced January 2024.

Comments: 13 pages, 6 figures, 3 tables

Theory of defect-induced crystal field perturbations in rare earth magnets

Authors: Christopher E. Patrick, Yixuan Huang, Laura H. Lewis, Julie B. Staunton

Abstract: We present a theory describing the single-ion anisotropy of rare earth (RE) magnets in the presence of point defects. Taking the RE-lean 1:12 magnet class as a prototype, we use first-principles calculations to show how the introduction of Ti substitutions into SmFe$_{12}$ perturbs the crystal field, generating new coefficients due to the lower symmetry of the RE environment. We then demonstrate t… ▽ More We present a theory describing the single-ion anisotropy of rare earth (RE) magnets in the presence of point defects. Taking the RE-lean 1:12 magnet class as a prototype, we use first-principles calculations to show how the introduction of Ti substitutions into SmFe$_{12}$ perturbs the crystal field, generating new coefficients due to the lower symmetry of the RE environment. We then demonstrate that these perturbations can be described extremely efficiently using a screened point charge model. We provide analytical expressions for the anisotropy energy which can be straightforwardly implemented in atomistic spin dynamics simulations, meaning that such simulations can be carried out for an arbitrary arrangement of point defects. The significant crystal field perturbations calculated here demonstrate that a sample which is single-phase from a structural point of view can nonetheless have a dramatically varying anisotropy profile at the atomistic level if there is compositional disorder, which may influence localized magnetic objects like domain walls or skyrmions. △ Less

Submitted 22 August, 2023; originally announced August 2023.

Comments: 14 pages, 3 figures

Revisiting Néel 60 years on: the magnetic anisotropy of $\mathrm{L}1_0$ FeNi (tetrataenite)

Authors: Christopher D. Woodgate, Christopher E. Patrick, Laura H. Lewis, Julie B. Staunton

Abstract: The magnetocrystalline anisotropy energy of atomically ordered $\mathrm{L}1_0$ FeNi (the meteoritic mineral tetrataenite) is studied within a first-principles electronic structure framework. Two compositions are examined: equiatomic Fe$_{0.5}$Ni$_{0.5}$ and an Fe-rich composition, Fe$_{0.56}$Ni$_{0.44}$. It is confirmed that, for the single crystals modelled in this work, the leading-order anisotr… ▽ More The magnetocrystalline anisotropy energy of atomically ordered $\mathrm{L}1_0$ FeNi (the meteoritic mineral tetrataenite) is studied within a first-principles electronic structure framework. Two compositions are examined: equiatomic Fe$_{0.5}$Ni$_{0.5}$ and an Fe-rich composition, Fe$_{0.56}$Ni$_{0.44}$. It is confirmed that, for the single crystals modelled in this work, the leading-order anisotropy coefficient $K_1$ dominates the higher-order coefficients $K_2$ and $K_3$. To enable comparison with experiment, the effects of both imperfect atomic long-range order and finite temperature are included. While our computational results initially appear to undershoot the measured experimental values for this system, careful scrutiny of the original analysis due to Néel et al. [J. Appl. Phys. 35, 873 (1964)] suggests that our computed value of $K_1$ is, in fact, consistent with experimental values, and that the noted discrepancy has its origins in the nanoscale polycrystalline, multivariant nature of experimental samples, that yields much larger values of $K_2$ and $K_3$ than expected a priori. These results provide fresh insight into the existing discrepancies in the literature regarding the value of tetrataenite's uniaxial magnetocrystalline anisotropy in both natural and synthetic samples. △ Less

Submitted 12 October, 2023; v1 submitted 28 July, 2023; originally announced July 2023.

Comments: 9 pages, 3 figures, 2 tables

Journal ref: J. Appl. Phys. 134, 163905 (2023)

Interplay between magnetism and short-range order in medium- and high-entropy alloys: CrCoNi, CrFeCoNi, and CrMnFeCoNi

Authors: Christopher D. Woodgate, Daniel Hedlund, L. H. Lewis, Julie B. Staunton

Abstract: The impact of magnetism on predicted atomic short-range order in three medium- and high-entropy alloys is studied using a first-principles, all-electron, Landau-type linear response theory, coupled with lattice-based atomistic modelling. We perform two sets of linear-response calculations: one in which the paramagnetic state is modelled within the disordered local moment picture, and one in which… ▽ More The impact of magnetism on predicted atomic short-range order in three medium- and high-entropy alloys is studied using a first-principles, all-electron, Landau-type linear response theory, coupled with lattice-based atomistic modelling. We perform two sets of linear-response calculations: one in which the paramagnetic state is modelled within the disordered local moment picture, and one in which systems are modelled in a magnetically ordered state, which is ferrimagnetic for the alloys considered in this work. We show that the treatment of magnetism can have significant impact both on the predicted temperature of atomic ordering and also the nature of atomic order itself. In CrCoNi, we find that the nature of atomic order changes from being $\mathrm{L}1_2$-like when modelled in the paramagnetic state to MoPt$_2$-like when modelled assuming the system has magnetically ordered. In CrFeCoNi, atomic correlations between Fe and the other elements present are dramatically strengthened when we switch from treating the system as magnetically disordered to magnetically ordered. Our results show it is necessary to consider the magnetic state when modelling multicomponent alloys containing mid- to late-$3d$ elements. Further, we suggest that there may be high-entropy alloy compositions containing $3d$ transition metals that will exhibit specific atomic short-range order when thermally treated in an applied magnetic field. This has the potential to provide a route for tuning physical and mechanical properties in this class of materials. △ Less

Submitted 18 April, 2023; v1 submitted 1 March, 2023; originally announced March 2023.

Comments: 26 pages, 4 figures, 2 tables

Journal ref: Phys. Rev. Materials 7, 053801 (2023)

Experimental Implementation of an Efficient Test of Quantumness

Authors: Laura Lewis, Daiwei Zhu, Alexandru Gheorghiu, Crystal Noel, Or Katz, Bahaa Harraz, Qingfeng Wang, Andrew Risinger, Lei Feng, Debopriyo Biswas, Laird Egan, Thomas Vidick, Marko Cetina, Christopher Monroe

Abstract: A test of quantumness is a protocol where a classical user issues challenges to a quantum device to determine if it exhibits non-classical behavior, under certain cryptographic assumptions. Recent attempts to implement such tests on current quantum computers rely on either interactive challenges with efficient verification, or non-interactive challenges with inefficient (exponential time) verifica… ▽ More A test of quantumness is a protocol where a classical user issues challenges to a quantum device to determine if it exhibits non-classical behavior, under certain cryptographic assumptions. Recent attempts to implement such tests on current quantum computers rely on either interactive challenges with efficient verification, or non-interactive challenges with inefficient (exponential time) verification. In this paper, we execute an efficient non-interactive test of quantumness on an ion-trap quantum computer. Our results significantly exceed the bound for a classical device's success. △ Less

Submitted 28 September, 2022; originally announced September 2022.

Comments: 6 pages, 2 figures

Interactive Protocols for Classically-Verifiable Quantum Advantage

Authors: Daiwei Zhu, Gregory D. Kahanamoku-Meyer, Laura Lewis, Crystal Noel, Or Katz, Bahaa Harraz, Qingfeng Wang, Andrew Risinger, Lei Feng, Debopriyo Biswas, Laird Egan, Alexandru Gheorghiu, Yunseong Nam, Thomas Vidick, Umesh Vazirani, Norman Y. Yao, Marko Cetina, Christopher Monroe

Abstract: Achieving quantum computational advantage requires solving a classically intractable problem on a quantum device. Natural proposals rely upon the intrinsic hardness of classically simulating quantum mechanics; however, verifying the output is itself classically intractable. On the other hand, certain quantum algorithms (e.g. prime factorization via Shor's algorithm) are efficiently verifiable, but… ▽ More Achieving quantum computational advantage requires solving a classically intractable problem on a quantum device. Natural proposals rely upon the intrinsic hardness of classically simulating quantum mechanics; however, verifying the output is itself classically intractable. On the other hand, certain quantum algorithms (e.g. prime factorization via Shor's algorithm) are efficiently verifiable, but require more resources than what is available on near-term devices. One way to bridge the gap between verifiability and implementation is to use "interactions" between a prover and a verifier. By leveraging cryptographic functions, such protocols enable the classical verifier to enforce consistency in a quantum prover's responses across multiple rounds of interaction. In this work, we demonstrate the first implementation of an interactive quantum advantage protocol, using an ion trap quantum computer. We execute two complementary protocols -- one based upon the learning with errors problem and another where the cryptographic construction implements a computational Bell test. To perform multiple rounds of interaction, we implement mid-circuit measurements on a subset of trapped ion qubits, with subsequent coherent evolution. For both protocols, the performance exceeds the asymptotic bound for classical behavior; maintaining this fidelity at scale would conclusively demonstrate verifiable quantum advantage. △ Less

Submitted 21 June, 2022; v1 submitted 9 December, 2021; originally announced December 2021.

Comments: 11 pages, 3 figures; supp. info 23 pages, 4 figures

Journal ref: Nature Physics (2023)

Discovery and implications of hidden atomic-scale structure in a metallic meteorite

Authors: András Kovács, Laura H. Lewis, Dhanalaksmi Palanisamy, Thibaud Denneulin, Alexander Schwedt, Edward R. D. Scott, Baptiste Gault, Dierk Raabe, Rafal E. Dunin-Borkowski, Michalis Charilaou

Abstract: Iron and its alloys have made modern civilisation possible, with metallic meteorites providing one of the human's earliest sources of usable iron as well as providing a window into our solar system's billion-year history. Here highest-resolution tools reveal the existence of a previously hidden FeNi nanophase within the extremely slowly cooled metallic meteorite NWA 6259. This new nanophase exists… ▽ More Iron and its alloys have made modern civilisation possible, with metallic meteorites providing one of the human's earliest sources of usable iron as well as providing a window into our solar system's billion-year history. Here highest-resolution tools reveal the existence of a previously hidden FeNi nanophase within the extremely slowly cooled metallic meteorite NWA 6259. This new nanophase exists alongside Ni-poor and Ni-rich nanoprecipitates within a matrix of tetrataenite, the uniaxial, chemically ordered form of FeNi. The ferromagnetic nature of the nanoprecipitates combined with the antiferromagnetic character of the FeNi nanophases give rise to a complex magnetic state that evolves dramatically with temperature. These observations extend and possibly alter our understanding of celestial metallurgy, provide new knowledge concerning the archetypal Fe-Ni phase diagram and supply new information for the development of new types of sustainable, technologically critical high-energy magnets. △ Less

Submitted 16 July, 2021; originally announced July 2021.

Comments: 10 pages, 5 figures

Superconducting and Antiferromagnetic Properties of Dual-Phase V$_3$Ga

Authors: Michelle E. Jamer, Brandon Wilfong, Vasiliy D. Buchelnikov, Vladimir V. Sokolovskiy, Olga N. Miroshkina, Mikhail A. Zagrebin, Danil R. Baigutlin, Jared Naphy, Badih A. Assaf, Laura H. Lewis, Aki Pulkkinen, Bernardo A. Barbiellini, Arun Bansil, Don Heiman

Abstract: The binary compound V$_3$Ga can exhibit two near-equilibrium phases, consisting of the A15 structure that is superconducting, and the Heusler D0$_3$ structure that is semiconducting and antiferromagnetic. Density functional theory calculations show that the two phases are closely degenerate, being separated by only ~10 meV/atom. Magnetization measurements on bulk-grown samples show superconducting… ▽ More The binary compound V$_3$Ga can exhibit two near-equilibrium phases, consisting of the A15 structure that is superconducting, and the Heusler D0$_3$ structure that is semiconducting and antiferromagnetic. Density functional theory calculations show that the two phases are closely degenerate, being separated by only ~10 meV/atom. Magnetization measurements on bulk-grown samples show superconducting behavior below 14 K. These results indicate the possibility of using V$_3$Ga for quantum technology devices utilizing both superconductivity and antiferromagnetism at the same temperature. △ Less

Submitted 28 May, 2020; originally announced May 2020.

Comments: submitted to Applied Physics Letters

Characterisation and optimisation of foams for varicose vein sclerotherapy

Authors: Tirion G. Roberts, Simon J. Cox, Andrew L. Lewis, Stephen A. Jones

Abstract: In this study we characterise the properties of foams used for varicose vein sclerotherapy. Their effectiveness is evaluated by predicting their yield stress and their flow profiles within a model of a vein. This information is represented using a Bingham number, which also takes into account the foam liquid fraction and the Sauter mean of the bubble size distribution. Based on this modelling, the… ▽ More In this study we characterise the properties of foams used for varicose vein sclerotherapy. Their effectiveness is evaluated by predicting their yield stress and their flow profiles within a model of a vein. This information is represented using a Bingham number, which also takes into account the foam liquid fraction and the Sauter mean of the bubble size distribution. Based on this modelling, the most effective foams have a Bingham number B = 600 for a vein of diameter 2mm, in addition to a narrow bubble size distribution. △ Less

Submitted 29 April, 2020; originally announced May 2020.

Comments: 10 pages, 6 figures

Reply to comment by Witte et al. on "Isochoric, isobaric, and ultrafast conductivities of aluminum, lithium,and carbon in the warm dense matter regime", Phys. Rev. E $96$, 053206 (2017)

Authors: M. W. C. Dharma-wardana, D. D. Klug, L. Harbour, Laurent J. Lewis

Abstract: In Phys. Rev. E, $99$, 047201 (2019) Witte {\it et al.} have commented on our conductivity calculations [Phys. Rev. E $96$, 053206 (2017)] for warm dense matter (WDM). (i) They criticize our use of the spherically-averaged structure factor $S(k)$ for calculations of the static conductivity $σ$ of FCC aluminum - a common approximation for polycrystalline materials. They themselves give no calculati… ▽ More In Phys. Rev. E, $99$, 047201 (2019) Witte {\it et al.} have commented on our conductivity calculations [Phys. Rev. E $96$, 053206 (2017)] for warm dense matter (WDM). (i) They criticize our use of the spherically-averaged structure factor $S(k)$ for calculations of the static conductivity $σ$ of FCC aluminum - a common approximation for polycrystalline materials. They themselves give no calculations as their method using density-functional theory (DFT) and molecular dynamics (MD) based Kubo-Greenwood (KG) calculations becomes impractical for cold ions. (ii) We are satisfied that Witte et al. no longer claim a factor of $\sim$ 1.5 change in $σ$ on changing the exchange-correlation (XC) functional used. (iii) They have provided computer-intensive calculations of $σ$ for aluminum using DFT-MD-KG simulations, for temperatures $T$ up to 15 eV but using only $N$=64 atoms in the simulation, where as a mixture of ionic species needs a far larger $N$ to be credible. We present multi-species conductivity calculations via a parameter-free DFT theory [Phys. Rev. E. $52$, 5352 (1995)] for 5 eV to 50 eV. (iv) The conductivities obtained from well-converged DFT-MD-KG methods show a significant underestimate of $σ$; this is especially evident for the isochoric conductivity $σ_{\rm ic}$ extrapolating to $\sim3.5\times 10^6$ S/m, i.e, {\it even below} the experimental {\it isobaric} value of 4.1$\times 10^6$ S/m at the melting point, when a value of $\sim 5\times 10^6$ S/m is anticipated. △ Less

Submitted 7 May, 2019; originally announced May 2019.

Comments: 9 pages and six figures

Structural and electronic properties of the spin-filter material CrVTiAl with disorder

Authors: Gregory M. Stephen, Gianina Buda, Michelle E. Jamer, Christopher Lane, Stanislaw Kaprzyk, Bernardo Barbiellini, David Graf, Laura H. Lewis, Arun Bansil, Don Heiman

Abstract: The effects of chemical disorder on the transport properties of the spin-filter material CrVTiAl are investigated experimentally and theoretically. Synchrotron X-ray diffraction experiments on bulk CrVTiAl and the associated Rietveld analysis indicate that the crystal structure consists primarily of a mixture of a partially ordered B2 phase, a fully disordered A2 phase and a small component of an… ▽ More The effects of chemical disorder on the transport properties of the spin-filter material CrVTiAl are investigated experimentally and theoretically. Synchrotron X-ray diffraction experiments on bulk CrVTiAl and the associated Rietveld analysis indicate that the crystal structure consists primarily of a mixture of a partially ordered B2 phase, a fully disordered A2 phase and a small component of an ordered L2\textsubscript{1} or Y phase. High temperature resistivity measurements confirm the existence of a band gap. First-principles, all-electron, self-consistent electronic structure computations show that the chemically disordered A2 and B2 phases are metallic, while the spin-filter properties of the ideal Y-type phase are preserved in the presence of L2\textsubscript{1} disorder. The Hall coefficient is found to decrease with increasing temperature, similar to the measured increase in the conductivity, indicating the presence of thermally activated semiconductor-like carriers. △ Less

Submitted 12 March, 2019; originally announced March 2019.

Comments: Accepted to Journal of Applied Physics

Ion-ion dynamic structure factor, acoustic modes and equation of state of two-temperature warm dense aluminum

Authors: L. Harbour, G. D. Förster, M. W. C. Dharma-wardana, L. J. Lewis

Abstract: The ion-ion dynamical structure factor and the equation of state of warm dense aluminum in a two-temperature quasi-equilibrium state, with the electron temperature higher than the ion temperature, are investigated using molecular-dynamics simulations based on ion-ion pair potentials constructed from a neutral pseudoatom model. Such pair potentials based on density functional theory are parameter-f… ▽ More The ion-ion dynamical structure factor and the equation of state of warm dense aluminum in a two-temperature quasi-equilibrium state, with the electron temperature higher than the ion temperature, are investigated using molecular-dynamics simulations based on ion-ion pair potentials constructed from a neutral pseudoatom model. Such pair potentials based on density functional theory are parameter-free and depend directly on the electron temperature and indirectly on the ion temperature, enabling efficient computation of two-temperature properties. Comparison with ab initio simulations and with other average-atom calculations for equilibrium aluminum shows good agreement, justifying a study of quasi-equilibrium situations. Analyzing the van Hove function, we find that ion-ion correlations vanish in a time significantly smaller than the electron-ion relaxation time so that dynamical properties have a physical meaning for the quasi-equilibrium state. A significant increase in the speed of sound is predicted from the modification of the dispersion relation of the ion acoustic mode as the electron temperature is increased. The two-temperature equation of state including the free energy, internal energy and pressure is also presented. △ Less

Submitted 25 April, 2018; v1 submitted 24 April, 2018; originally announced April 2018.

Isochoric, isobaric and ultrafast conductivities of aluminum, lithium and carbon in the warm dense matter (WDM) regime

Authors: M. W. C. Dharma-wardana, D. D. Klug, L. Harbour, Laurent J. Lewis

Abstract: We study the conductivities $σ$ of (i) the equilibrium isochoric state ($σ_{\rm is}$), (ii) the equilibrium isobaric state ($σ_{\rm ib}$), and also the (iii) non-equilibrium ultrafast matter (UFM) state ($σ_{\rm uf}$) with the ion temperature $T_i$ less than the the electron temperature $T_e$. Aluminum, lithium and carbon are considered, being increasingly complex warm dense matter (WDM) systems,… ▽ More We study the conductivities $σ$ of (i) the equilibrium isochoric state ($σ_{\rm is}$), (ii) the equilibrium isobaric state ($σ_{\rm ib}$), and also the (iii) non-equilibrium ultrafast matter (UFM) state ($σ_{\rm uf}$) with the ion temperature $T_i$ less than the the electron temperature $T_e$. Aluminum, lithium and carbon are considered, being increasingly complex warm dense matter (WDM) systems, with carbon having transient covalent bonds. First-principles calculations, i.e., neutral-pseudoatom (NPA) calculations and density-functional theory (DFT) with molecular-dynamics (MD) simulations, are compared where possible with experimental data to characterize $σ_{\rm ic}, σ_{\rm ib}$ and $σ_{\rm uf}$. The NPA $σ_{\rm ib}$ are closest to the available experimental data when compared to results from DFT+MD, where simulations of about 64-125 atoms are typically used. The published conductivities for Li are reviewed and the value at a temperature of 4.5 eV is examined using supporting X-ray Thomson scattering calculations. A physical picture of the variations of $σ$ with temperature and density applicable to these materials is given. The insensitivity of $σ$ to $T_e$ below 10 eV for carbon, compared to Al and Li, is clarified. △ Less

Submitted 21 September, 2017; originally announced October 2017.

Comments: 10 figures

Journal ref: Phys. Rev. E 96, 053206 (2017)

Equation of state, phonons, and lattice stability of ultra-fast warm dense matter

Authors: Louis Harbour, Chandre M. Dharma-wardana, Dennis D. Klug, Laurent J. Lewis

Abstract: Using the two-temperature model for ultrafast matter (UFM), we compare the equation of state, pair-distribution functions $g(r)$, and phonons using the neutral pseudoatom (NPA) model with results from density-functional theory (DFT) codes and molecular-dynamics (MD) simulations for Al, Li and Na. The NPA approach uses state-dependent first-principles pseudopotentials from an `all-electron' DFT cal… ▽ More Using the two-temperature model for ultrafast matter (UFM), we compare the equation of state, pair-distribution functions $g(r)$, and phonons using the neutral pseudoatom (NPA) model with results from density-functional theory (DFT) codes and molecular-dynamics (MD) simulations for Al, Li and Na. The NPA approach uses state-dependent first-principles pseudopotentials from an `all-electron' DFT calculation with finite-$T$ XCF. It provides pair potentials, structure factors, the `bound' and `free' states, as well as a mean ionization $\bar{Z}$ unambiguously. These are not easily accessible {\it via} DFT+MD calculations which become prohibitive for $T/T_F$ exceeding $\sim 0.6$, where $T_F$ is the Fermi temperature. Hence, both DFT+MD and NPA methods can be compared up to $\sim 8$ eV, while higher $T$ can be addressed ${\it via}$ the NPA. The high-$T_e$ phonon calculations raise the question of UFM lattice stability and surface ablation in thin UFM samples. The ablation forces in a UFM slab are used to define an "ablation time" competing with phonon formation times in thin UFM samples. Excellent agreement for all properties is found between NPA and standard DFT codes, even for Li where a strongly non-local pseudopotential is used in DFT codes. The need to use pseudopotentials appropriate to the ionization state $\bar{Z}$ is emphasized. The effect of finite-$T$ exchange-correlation functional is illustrated via its effect on the pressure and the electron-density distribution at a nucleus. △ Less

Submitted 9 March, 2017; originally announced March 2017.

Comments: 13 apges, 9 figures

Journal ref: Phys. Rev. E 95, 043201 (2017)

Pair potentials for warm dense matter and their application to x-ray Thomson scattering in aluminum and beryllium

Authors: Louis Harbour, M. W. Chandre Dharma-wardana, Dennis D. Klug, Laurent J. Lewis

Abstract: Ultrafast laser experiments yield increasingly reliable data on warm dense matter, but their interpretation requires theoretical models. We employ an efficient density functional neutral-pseudoatom hypernetted-chain (NPA-HNC) model with accuracy comparable to ab initio simulations and which provides first-principles pseudopotentials and pair-potentials for warm-dense matter. It avoids the use of (… ▽ More Ultrafast laser experiments yield increasingly reliable data on warm dense matter, but their interpretation requires theoretical models. We employ an efficient density functional neutral-pseudoatom hypernetted-chain (NPA-HNC) model with accuracy comparable to ab initio simulations and which provides first-principles pseudopotentials and pair-potentials for warm-dense matter. It avoids the use of (i) ad hoc core-repulsion models and (ii) "Yukawa screening", and (iii) need not assume ionelectron thermal equilibrium. Computations of the x-Ray Thomson scattering (XRTS) spectra of aluminum and beryllium are compared with recent experiments and with density-functional-theory molecular-dynamics (DFT-MD) simulations. The NPA-HNC structure factors, compressibilities, phonons and conductivities agree closely with DFT-MD results, while Yukawa screening gives misleading results. The analysis of the XRTS data for two of the experiments, using two-temperature quasi-equilibrium models, is supported by calculations of their temperature relaxation times. △ Less

Submitted 1 December, 2016; originally announced December 2016.

Comments: 12 pages, 11 figures

Journal ref: Physical Review E 94, 053211 (2016)

Synthesis of low-moment CrVTiAl: a potential room temperature spin filter

Authors: Gregory M. Stephen, Ian McDonald, Brian Lejeune, Laura H. Lewis, Don Heiman

Abstract: The efficient production of spin-polarized currents at room temperature is fundamental to the advancement of spintronics. Spin-filter materials --- semiconductors with unequal band gaps for each spin channel --- can generate spin-polarized current without the need for spin-polarized contacts. In addition, a spin-filter material with zero magnetic moment would have the advantage of not producing st… ▽ More The efficient production of spin-polarized currents at room temperature is fundamental to the advancement of spintronics. Spin-filter materials --- semiconductors with unequal band gaps for each spin channel --- can generate spin-polarized current without the need for spin-polarized contacts. In addition, a spin-filter material with zero magnetic moment would have the advantage of not producing strong fringing fields that would interfere with neighboring electronic components and limit the volume density of devices. The quaternary Heusler compound CrVTiAl has been predicted to be a zero-moment spin-filter material with a Curie temperature in excess of 1000 K. In this work, CrVTiAl has been synthesized with a lattice constant of $a = 6.15 Å$. Magnetization measurements reveal an exceptionally low moment of $μ= 2.3 \times 10^{-3} μ_B/f.u.$ at a field of $μ_0 H = 2 T$, that is independent of temperature between T = 10 K and 400 K, consistent with the predicted zero-moment ferrimagnetism. Transport measurements reveal a combination of metallic and semiconducting components to the resistivity. Combining a zero-moment spin-filter material with nonmagnetic electrodes would lead to an essentially nonmagnetic spin injector. These results suggest that CrVTiAl is a promising candidate for further research in the field of spintronics. △ Less

Submitted 9 December, 2016; v1 submitted 28 November, 2016; originally announced November 2016.

Comments: Accepted to Appl. Phys. Lett

Journal ref: Appl. Phys. Lett. 109, 242401 (2016);

A critical assessment of models of pair-interactions and screening used in analyzing recent warm-dense matter (WDM) experiments

Authors: L. Harbour, M. W. C. Dharma-wardana, D. D. Klug, L. J. Lewis

Abstract: Ultra-fast laser experiments yield increasingly reliable data on warm-dense matter (WDM), but rely on entrenched simplistic theoretical models. We re-analyze two topical experiments, avoiding (i) {\it ad hoc} core-repulsion models, (ii) "Yukawa screening" models and (iii) electron-ion equilibrium assumptions. An accurate, rapid density-functional neutral-pseudoatom model coupled to a hyper-netted-… ▽ More Ultra-fast laser experiments yield increasingly reliable data on warm-dense matter (WDM), but rely on entrenched simplistic theoretical models. We re-analyze two topical experiments, avoiding (i) {\it ad hoc} core-repulsion models, (ii) "Yukawa screening" models and (iii) electron-ion equilibrium assumptions. An accurate, rapid density-functional neutral-pseudoatom model coupled to a hyper-netted-chain (HNC) equation with a bridge term is used to compute structure factors, X-Ray scattering, compressibility, phonons and resistivity. Electronic-structure codes are used to confirm the calculations. The Yukawa and core-repulsion models are shown to be misleading. △ Less

Submitted 10 April, 2016; originally announced April 2016.

Comments: five figures, four pages

Journal ref: Phys. Rev. E, vol. 94, issue 5, pages 053211 (2016)

Low-moment ferrimagnetic phase of the Heusler compound Cr2CoAl

Authors: Michelle E. Jamer, Luke G. Marshall, George E. Sterbinsky, Laura H. Lewis, Don Heiman

Abstract: Synthesizing half-metallic fully-compensated ferrimagnets that form in the inverse Heusler phase could lead to superior spintronic devices. These materials would have high spin polarization at room temperature with very little fringing magnetic fields. Previous theoretical studies indicated that Cr2CoAl should form in a stable inverse Heusler lattice due to its low activation energy. Here, stoichi… ▽ More Synthesizing half-metallic fully-compensated ferrimagnets that form in the inverse Heusler phase could lead to superior spintronic devices. These materials would have high spin polarization at room temperature with very little fringing magnetic fields. Previous theoretical studies indicated that Cr2CoAl should form in a stable inverse Heusler lattice due to its low activation energy. Here, stoichiometric Cr2CoAl samples were arc-melted and annealed at varying temperatures, followed by studies of their structural and magnetic properties. High-resolution synchrotron X-ray diffraction revealed a chemically ordered Heusler phase in addition to CoAl and Cr phases. Soft X-ray magnetic circular dichroism revealed that the Cr and Co magnetic moments are antiferromagnetically oriented leading to the observed low magnetic moment in Cr2CoAl. △ Less

Submitted 4 June, 2015; originally announced June 2015.

Comments: Submitted to J. Magn. Magn. Mater

Two-temperature pair potentials and phonon spectra for simple metals in the warm dense matter regime

Authors: Louis Harbour, M. W. Chandre Dharma-wardana, Dennis D. Klug, Laurent J. Lewis

Abstract: We develop ion-ion pair potentials for Al, Na and K for densities and temperatures relevant to the warm-dense-matter (WDM) regime. Furthermore, we emphasize non-equilibrium states where the ion temperature $T_i$ differs from the electron temperature $T_e$. This work focuses mainly on ultra-fast laser-metal interactions where the energy of the laser is almost exclusively transferred to the electron… ▽ More We develop ion-ion pair potentials for Al, Na and K for densities and temperatures relevant to the warm-dense-matter (WDM) regime. Furthermore, we emphasize non-equilibrium states where the ion temperature $T_i$ differs from the electron temperature $T_e$. This work focuses mainly on ultra-fast laser-metal interactions where the energy of the laser is almost exclusively transferred to the electron sub-system over femtosecond time scales. This results in a two-temperature system with $T_e>T_i$ and with the ions still at the initial room temperature $T_i=T_r$. First-principles calculations, such as density functional theory (DFT) or quantum Monte Carlo, are as yet not fully feasible for WDM conditions due to lack of finite-$T$ features, e.g. pseudopotentials, and extensive CPU time requirements. Simpler methods are needed to study these highly complex systems. We propose to use two-temperature pair potentials $U_{ii}(r, T_i,T_e)$ constructed from linear-response theory using the non-linear electron density $n(\mathbf{r})$ obtained from finite-$T$ DFT with a single ion immersed in the appropriate electron fluid. We compute equilibrium phonon spectra at $T_r$ which are found to be in very good agreement with experiments. This gives credibility to our non-equilibrium phonon dispersion relations which are important in determining thermophysical properties, stability, energy-relaxation mechanisms and transport coefficients. △ Less

Submitted 18 March, 2015; originally announced March 2015.

Comments: International Conf. on Strongly-Coupled Coulombo Systems (SCCS) 2014

Antiferromagnetic phase of the gapless semiconductor V3Al

Authors: M. E. Jamer, B. A. Assaf, G. E. Sterbinsky, D. Arena, L. H. Lewis, A. A. Saúl, G. Radtke, D. Heiman

Abstract: Discovering new antiferromagnetic compounds is at the forefront of developing future spintronic devices without fringing magnetic fields. The antiferromagnetic gapless semiconducting D03 phase of V3Al was successfully synthesized via arc-melting and annealing. The antiferromagnetic properties were established through synchrotron measurements of the atom-specific magnetic moments, where the magneti… ▽ More Discovering new antiferromagnetic compounds is at the forefront of developing future spintronic devices without fringing magnetic fields. The antiferromagnetic gapless semiconducting D03 phase of V3Al was successfully synthesized via arc-melting and annealing. The antiferromagnetic properties were established through synchrotron measurements of the atom-specific magnetic moments, where the magnetic dichroism reveals large and oppositely-oriented moments on individual V atoms. Density functional theory calculations confirmed the stability of a type G antiferromagnetism involving only two-third of the V atoms, while the remaining V atoms are nonmagnetic. Magnetization, x-ray diffraction and transport measurements also support the antiferromagnetism. This archetypal gapless semiconductor may be considered as a cornerstone for future spintronic devices containing antiferromagnetic elements. △ Less

Submitted 25 February, 2015; originally announced February 2015.

Comments: Accepted to Physics Review B on 02/23/15

Temperature controlled motion of an antiferromagnet-ferromagnet interface within a dopant-graded FeRh epilayer

Authors: C. Le Graët, T. R. Charlton, M. McLaren, M. Loving, S. A. Morley, C. J. Kinane, R. M. D. Brydson, L. H. Lewis, S. Langridge, C. H. Marrows

Abstract: Chemically ordered B2 FeRh exhibits a remarkable antiferromagnetic-ferromagnetic phase transition that is first order. It thus shows phase coexistence, usually by proceeding though nucleation at random defect sites followed by propagation of phase boundary domain walls. The transition occurs at a temperature that can be varied by doping other metals onto the Rh site. We have taken advantage of thi… ▽ More Chemically ordered B2 FeRh exhibits a remarkable antiferromagnetic-ferromagnetic phase transition that is first order. It thus shows phase coexistence, usually by proceeding though nucleation at random defect sites followed by propagation of phase boundary domain walls. The transition occurs at a temperature that can be varied by doping other metals onto the Rh site. We have taken advantage of this to yield control over the transition process by preparing an epilayer with oppositely directed doping gradients of Pd and Ir throughout its height, yielding a gradual transition that occurs between 350~K and 500~K. As the sample is heated, a horizontal antiferromagnetic-ferromagnetic phase boundary domain wall moves gradually up through the layer, its position controlled by the temperature. This mobile magnetic domain wall affects the magnetisation and resistivity of the layer in a way that can be controlled, and hence exploited, for novel device applications. △ Less

Submitted 23 December, 2014; originally announced December 2014.

Comments: submitted to APL Materials

Observation of a temperature dependent asymmetry in the domain structure of a Pd doped FeRh epilayer

Authors: C. J. Kinane, M. Loving, M. A. de Vries, R. Fan, T. R. Charlton, J. S. Claydon, D. A. Arena, F. Maccherozzi, S. S. Dhesi, D. Heiman, C. H. Marrows, L. H. Lewis, Sean Langridge

Abstract: Using X-ray photoelectron emission microscopy we have observed the coexistence of ferromagnetic and antiferromagnetic phases in a (3 at.%)Pd-doped FeRh epilayer. By quantitatively analyzing the resultant images we observe that as the epilayer transforms there is a change in magnetic domain symmetry from predominantly twofold at lower temperatures through to an equally weighted combination of both… ▽ More Using X-ray photoelectron emission microscopy we have observed the coexistence of ferromagnetic and antiferromagnetic phases in a (3 at.%)Pd-doped FeRh epilayer. By quantitatively analyzing the resultant images we observe that as the epilayer transforms there is a change in magnetic domain symmetry from predominantly twofold at lower temperatures through to an equally weighted combination of both four and twofold symmetries at higher temperature. It is postulated that the lowered symmetry Ising-like nematic phase resides at the near-surface of the epilayer. This behavior is different to that of undoped FeRh suggesting that the variation in symmetry is driven by the competing structural and electronic interactions in the nanoscale FeRh film coupled with the effect of the chemical doping disorder. △ Less

Submitted 8 July, 2014; originally announced July 2014.

Comments: 10 pages, 8 figures, 1 table

Report number: Epubs 12277055

Journal ref: 2014 New J. Phys. 16 113073

Magnetic Properties and Large Coercivity of MnxGa Nanostructures

Authors: Michelle E. Jamer, Badih A. Assaf, Steven P. Bennett, Laura H. Lewis, Don Heiman

Abstract: To investigate structure-property correlations, high-coercivity MnxGa nanoparticles were synthesized by the method of sequential deposition of Ga and Mn fluxes using molecular beam epitaxy. Spontaneous nanostructuring was assisted by the use of an Au precursor and thermal annealing, and the growth properties, structure and magnetic properties were characterized. Atomic force microscopy revealed av… ▽ More To investigate structure-property correlations, high-coercivity MnxGa nanoparticles were synthesized by the method of sequential deposition of Ga and Mn fluxes using molecular beam epitaxy. Spontaneous nanostructuring was assisted by the use of an Au precursor and thermal annealing, and the growth properties, structure and magnetic properties were characterized. Atomic force microscopy revealed average particle dimensions of 100 nm and X-ray diffraction revealed a dominant tetragonal D022 crystal structures. Magnetic characterization at room temperature identified the presence of two magnetic phases, dominated by a high-coercivity (2.3 T) component in addition to a low-coercivity component. △ Less

Submitted 20 January, 2014; originally announced January 2014.

Journal ref: Journal of Magnetism and Magnetic Materials, 358-359, 259-262 (2014)

Replenish and relax: explaining logarithmic annealing in disordered materials

Authors: Laurent Karim Béland, Yonathan Anahory, Dries Smeets, Matthieu Guihard, Peter Brommer, Jean-François Joly, Jean-Christophe Pothier, Laurent J. Lewis, Normand Mousseau, François Schiettekatte

Abstract: Fatigue and aging of materials are, in large part, determined by the evolution of the atomic-scale structure in response to strains and perturbations. This coupling between microscopic structure and long time scales remains one of the main challenges in materials study. Focusing on a model system, ion-damaged crystalline silicon, we combine nanocalorimetric experiments with an off-lattice kinetic… ▽ More Fatigue and aging of materials are, in large part, determined by the evolution of the atomic-scale structure in response to strains and perturbations. This coupling between microscopic structure and long time scales remains one of the main challenges in materials study. Focusing on a model system, ion-damaged crystalline silicon, we combine nanocalorimetric experiments with an off-lattice kinetic Monte Carlo simulation to identify the atomistic mechanisms responsible for the structural relaxation over long time scales. We relate the logarithmic relaxation, observed in a number of systems, with heat-release measurements. The microscopic mechanism associated with logarithmic relaxation can be described as a two-step replenish and relax process. As the system relaxes, it reaches deeper energy states with logarithmically growing barriers that need to be unlocked to replenish the heat-releasing events leading to lower energy configurations. △ Less

Submitted 10 April, 2013; originally announced April 2013.

Hall effect characterization of electronic transition behind the metamagnetic transition in FeRh

Authors: M. A. de Vries, M. L. Loving, A. P. Mihai, L. H. Lewis, D. Heiman, C. H. Marrows

Abstract: The antiferromagnetic ground state and the metamagnetic transition to the ferromagnetic state of CsCl-ordered FeRh epilayers have been characterized using Hall and magnetoresistance measure- ments. On cooling into the ground state, the metamagnetic transition is found to coincide with a suppression in carrier density of at least an order of magnitude below the typical metallic level shown by the f… ▽ More The antiferromagnetic ground state and the metamagnetic transition to the ferromagnetic state of CsCl-ordered FeRh epilayers have been characterized using Hall and magnetoresistance measure- ments. On cooling into the ground state, the metamagnetic transition is found to coincide with a suppression in carrier density of at least an order of magnitude below the typical metallic level shown by the ferromagnetic state. The data reveal that this sub-metallic density of electron-like majority carriers in the antiferromagnetic phase are attributable to intrinsic doping from Fe/Rh substitution defects, with approximately two electrons per pair of atoms swapped. Based on these observations it is suggested that an orbital selective Mott transition, selective to the Fe 3d electrons drives the metamagnetic transition. △ Less

Submitted 13 September, 2012; v1 submitted 23 May, 2012; originally announced May 2012.

Comments: Revised manuscript; 6 pages, 4 figures

Heat conduction across molecular junctions between nanoparticles

Authors: Samy Merabia, Jean-Louis Barrat, Laurent J. Lewis

Abstract: We investigate the problem of heat conduction across a molecular junction connecting two nanoparticles, both in vacuum and in a liquid environment, using classical molecular dynamics simulations. In vacuum, the well-known result of a length independent conductance is recovered; its precise value, however, is found to depend sensitively on the overlap between the vibrational spectrum of the junctio… ▽ More We investigate the problem of heat conduction across a molecular junction connecting two nanoparticles, both in vacuum and in a liquid environment, using classical molecular dynamics simulations. In vacuum, the well-known result of a length independent conductance is recovered; its precise value, however, is found to depend sensitively on the overlap between the vibrational spectrum of the junction and the density of states of the nanoparticles that act as thermal contacts. In a liquid environment, the conductance is constant up to a crossover length, above which a standard Fourier regime is recovered. △ Less

Submitted 27 May, 2011; originally announced May 2011.

Journal ref: The Journal of Chemical Physics 134 (2011) 234707

Crystallization of amorphous silicon induced by mechanical shear deformations

Authors: Ali Kerrache, Normand Mousseau, Laurent J. Lewis

Abstract: We have investigated the response of amorphous silicon (a-Si), in particular crystallization, to external mechanical shear deformations using classical molecular dynamics (MD) simulations and the empirical Environment Dependent Inter-atomic Potential (EDIP) [Phys. Rev. B 56, 8542 (1997)]. In agreement with previous results we find that, at low shear velocity and low temperature, shear deformations… ▽ More We have investigated the response of amorphous silicon (a-Si), in particular crystallization, to external mechanical shear deformations using classical molecular dynamics (MD) simulations and the empirical Environment Dependent Inter-atomic Potential (EDIP) [Phys. Rev. B 56, 8542 (1997)]. In agreement with previous results we find that, at low shear velocity and low temperature, shear deformations increase disorder and defect density. At high temperatures, however, the deformations are found to induce crystallization, demonstrating a dynamical transition associated with both shear rate and temperature. The properties of a-Si under shear deformations and the extent at which the system crystallizes are analyzed in terms of the potential energy difference (PED) between the sheared and non-sheared material, as well as the fraction of defects and the number of particles that possess a crystalline environment. △ Less

Submitted 29 April, 2011; originally announced April 2011.

Comments: 8 pages, 12 figures

Amorphous silicon under mechanical shear deformations: shear velocity and temperature effects

Authors: Ali Kerrache, Normand Mousseau, Laurent J. Lewis

Abstract: Mechanical shear deformations lead, in some cases, to effects similar to those resulting from ion irradiation. Here we characterize the effects of shear velocity and temperature on amorphous silicon (\aSi) modelled using classical molecular dynamics simulations based on the empirical Environment Dependent Inter-atomic Potential (EDIP). With increasing shear velocity at low temperature, we find a s… ▽ More Mechanical shear deformations lead, in some cases, to effects similar to those resulting from ion irradiation. Here we characterize the effects of shear velocity and temperature on amorphous silicon (\aSi) modelled using classical molecular dynamics simulations based on the empirical Environment Dependent Inter-atomic Potential (EDIP). With increasing shear velocity at low temperature, we find a systematic increase in the internal strain leading to the rapid appearance of structural defects (5-fold coordinated atoms). The impacts of externally applied strain can be almost fully compensated by increasing the temperature, allowing the system to respond more rapidly to the deformation. In particular, we find opposite power-law relations between the temperature and the shear velocity and the deformation energy. The spatial distribution of defects is also found to strongly depend on temperature and strain velocity. For low temperature or high shear velocity, defects are concentrated in a few atomic layers near the center of the cell while, with increasing temperature or decreasing shear velocity, they spread slowly throughout the full simulation cell. This complex behavior can be related to the structure of the energy landscape and the existence of a continuous energy-barrier distribution. △ Less

Submitted 15 February, 2011; v1 submitted 26 August, 2010; originally announced August 2010.

Comments: 10 pages, 17 figures

Universal Properties of Linear Magnetoresistance in Strongly Disordered Semiconductors

Authors: H. G. Johnson, S. P. Bennett, R. Barua, L. H Lewis, D. Heiman

Abstract: Linear magnetoresistance occurs in semiconductors as a consequence of strong electrical disorder and is characterized by nonsaturating magnetoresistance that is proportional to the applied magnetic field. By investigating a disordered MnAs-GaAs composite material, it is found that the magnitude of the linear magnetoresistance (LMR) is numerically equal to the carrier mobility over a wide range and… ▽ More Linear magnetoresistance occurs in semiconductors as a consequence of strong electrical disorder and is characterized by nonsaturating magnetoresistance that is proportional to the applied magnetic field. By investigating a disordered MnAs-GaAs composite material, it is found that the magnitude of the linear magnetoresistance (LMR) is numerically equal to the carrier mobility over a wide range and is independent of carrier density. This behavior is complementary to the Hall effect that is independent of the mobility and dependent on the carrier density. Moreover, the LMR appears to be insensitive to the details of the disorder and points to a universal explanation of classical LMR that can be applied to other material systems. △ Less

Submitted 9 July, 2010; originally announced July 2010.

Comments: Accepted by Phys. Rev. B (2010)

Journal ref: Phys. Rev. B 82, 085202 (2010)

Determining Magnetic Nanoparticle Size Distributions from Thermomagnetic Measurements

Authors: R. S. DiPietro, H. G. Johnson, S. P. Bennett, T. J. Nummy, L. H. Lewis, D. Heiman

Abstract: Thermomagnetic measurements are used to obtain the size distribution and anisotropy of magnetic nanoparticles. An analytical transformation method is described which utilizes temperature-dependent zero-field cooling (ZFC) magnetization data to provide a quantitative measurement of the average diameter and relative abundance of superparamagnetic nanoparticles. Applying this method to self-assembled… ▽ More Thermomagnetic measurements are used to obtain the size distribution and anisotropy of magnetic nanoparticles. An analytical transformation method is described which utilizes temperature-dependent zero-field cooling (ZFC) magnetization data to provide a quantitative measurement of the average diameter and relative abundance of superparamagnetic nanoparticles. Applying this method to self-assembled MnAs nanoparticles in MnAs-GaAs composite films reveals a log-normal size distribution and reduced anisotropy for nanoparticles compared to bulk materials. This analytical technique holds promise for rapid assessment of the size distribution of an ensemble of superparamagnetic nanoparticles. △ Less

Submitted 25 April, 2015; v1 submitted 18 May, 2010; originally announced May 2010.

Comments: Correction Appl. Phys. Lett. 98, 216103 (2011)

Journal ref: Appl. Phys. Lett. 96, 222506 (2010)

High coercivity cobalt carbide nanoparticles processed via polyol reaction: A new permanent magnet material

Authors: V. G. Harris, Y. Chen, A. Yang, S. Yoon, Z. Chen, Anton Geiler, C. N. Chinnasamy, L. H. Lewis, C. Vittoria, E. E. Carpenter, K. J. Carroll, R. Goswami, M. A. Willard, L. Kurihara, M. Gjoka, O. Kalogirou

Abstract: Cobalt carbide nanoparticles were processed using polyol reduction chemistry that offers high product yields in a cost effective single-step process. Particles are shown to be acicular in morphology and typically assembled as clusters with room temperature coercivities greater than 4 kOe and maximum energy products greater than 20 KJ/m3. Consisting of Co3C and Co2C phases, the ratio of phase vol… ▽ More Cobalt carbide nanoparticles were processed using polyol reduction chemistry that offers high product yields in a cost effective single-step process. Particles are shown to be acicular in morphology and typically assembled as clusters with room temperature coercivities greater than 4 kOe and maximum energy products greater than 20 KJ/m3. Consisting of Co3C and Co2C phases, the ratio of phase volume, particle size, and particle morphology all play important roles in determining permanent magnet properties. Further, the acicular particle shape provides an enhancement to the coercivity via dipolar anisotropy energy as well as offering potential for particle alignment in nanocomposite cores. While Curie temperatures are near 510K at temperatures approaching 700 K the carbide powders experience an irreversible dissociation to metallic cobalt and carbon thus limiting operational temperatures to near room temperature. △ Less

Submitted 6 November, 2009; originally announced November 2009.

Comments: Total 28 pages, 10 figures, and 1 table

Critical heat flux around strongly-heated nanoparticles

Authors: Samy Merabia, Pawel Keblinski, Laurent Joly, Laurent Lewis, Jean-Louis Barrat

Abstract: We study heat transfer from a heated nanoparticle into surrounding fluid, using molecular dynamics simulations. We show that the fluid next to the nanoparticle can be heated well above its boiling point without a phase change. Under increasing nanoparticle temperature, the heat flux saturates which is in sharp contrast with the case of flat interfaces, where a critical heat flux is observed foll… ▽ More We study heat transfer from a heated nanoparticle into surrounding fluid, using molecular dynamics simulations. We show that the fluid next to the nanoparticle can be heated well above its boiling point without a phase change. Under increasing nanoparticle temperature, the heat flux saturates which is in sharp contrast with the case of flat interfaces, where a critical heat flux is observed followed by development of a vapor layer and heat flux drop. These differences in heat transfer are explained by the curvature induced pressure close to the nanoparticle, which inhibits boiling. When the nanoparticle temperature is much larger than the critical fluid temperature, a very large temperature gradient develops resulting in close to ambient temperature just radius away from the particle surface △ Less

Submitted 25 August, 2008; originally announced August 2008.

Journal ref: Physical Review E: Statistical, Nonlinear, and Soft Matter Physics 79 (2009) 021404

The Kinetic Activation-Relaxation Technique: A Powerful Off-lattice On-the-fly Kinetic Monte Carlo Algorithm

Authors: fedwa El-Mellouhi, Normand Mousseau, Laurent J. Lewis

Abstract: Many materials science phenomena, such as growth and self-organisation, are dominated by activated diffusion processes and occur on timescales that are well beyond the reach of standard-molecular dynamics simulations. Kinetic Monte Carlo (KMC) schemes make it possible to overcome this limitation and achieve experimental timescales. However, most KMC approaches proceed by discretizing the problem… ▽ More Many materials science phenomena, such as growth and self-organisation, are dominated by activated diffusion processes and occur on timescales that are well beyond the reach of standard-molecular dynamics simulations. Kinetic Monte Carlo (KMC) schemes make it possible to overcome this limitation and achieve experimental timescales. However, most KMC approaches proceed by discretizing the problem in space in order to identify, from the outset, a fixed set of barriers that are used throughout the simulations, limiting the range of problems that can be addressed. Here, we propose a more flexible approach -- the kinetic activation-relaxation technique (k-ART) -- which lifts these constraints. Our method is based on an off-lattice, self-learning, on-the-fly identification and evaluation of activation barriers using ART and a topological description of events. The validity and power of the method are demonstrated through the study of vacancy diffusion in crystalline silicon. △ Less

Submitted 15 May, 2008; originally announced May 2008.

Comments: 5 pages, 4 figures

Interface energies of (100)_{YSZ} and (111)_{YSZ} epitaxial islands on (0001)_{alpha-Al_2O_3} substrates from first principles

Authors: F. Lallet, N. Olivi-Tran, Laurent J. Lewis

Abstract: We present an ab initio study of the interface energies of cubic yttria-stabilized zirconia (YSZ) epitaxial layers on a (0001)_{alpha-Al_2O_3} substrate. The interfaces are modelled using a supercell geometry and the calculations are carried out in the framework of density-functional theory (DFT) and the local-density approximation (LDA) using the projector-augmented-wave (PAW) pseudopotential a… ▽ More We present an ab initio study of the interface energies of cubic yttria-stabilized zirconia (YSZ) epitaxial layers on a (0001)_{alpha-Al_2O_3} substrate. The interfaces are modelled using a supercell geometry and the calculations are carried out in the framework of density-functional theory (DFT) and the local-density approximation (LDA) using the projector-augmented-wave (PAW) pseudopotential approach. Our calculations clearly demonstrate that the (111)_{YSZ} || (0001)_{alpha-Al_2O_3} interface energy is lower than that of (100)_{YSZ} || (0001)_{alpha-Al_2O_3}. This result is central to understanding the behaviour of YSZ thin solid film islanding on (0001)_{alpha-Al_2O_3} substrates, either flat or in presence of defects. △ Less

Submitted 23 January, 2008; originally announced January 2008.

Comments: 25 pages, 5 figures, 10 tables, submitted to Physical Review B

Quantum dots in Si/SiGe 2DEGs with Schottky top-gated leads

Authors: K A Slinker, K L M Lewis, C C Haselby, S Goswami, L J Klein, J O Chu, S N Coppersmith, Robert Joynt, R H Blick, Mark Friesen, M A Eriksson

Abstract: We report on the fabrication and characterization of quantum dot devices in a Schottky-gated silicon/silicon-germanium two-dimensional electron gas (2DEG). The dots are confined laterally inside an etch-defined channel, while their potential is modulated by an etch-defined 2DEG gate in the plane of the dot. For the first time in this material, Schottky top gates are used to define and tune the t… ▽ More We report on the fabrication and characterization of quantum dot devices in a Schottky-gated silicon/silicon-germanium two-dimensional electron gas (2DEG). The dots are confined laterally inside an etch-defined channel, while their potential is modulated by an etch-defined 2DEG gate in the plane of the dot. For the first time in this material, Schottky top gates are used to define and tune the tunnel barriers of the dot. The leakage current from the gates is reduced by minimizing their active area. Further suppression of the leakage is achieved by increasing the etch depth of the channel. The top gates are used to put the dot into the Coulomb blockade regime, and conductance oscillations are observed as the voltage on the side gate is varied. △ Less

Submitted 16 August, 2005; v1 submitted 3 August, 2005; originally announced August 2005.

Comments: New Fig. 1, submitted to New Journal of Physics

Journal ref: New Journal of Physics v7, p246 (2005)

Synthesis and characterization of Na03RhO206H2O - a semiconductor with a weak ferromagnetic component

Authors: S. Park, K. Kang, W. Si, W. -S. Yoon, Y. Lee, A. R. Moodenbaugh, L. H. Lewis, T. Vogt

Abstract: We have prepared the oxyhydrate Na03RhO206H2O by extracting Na+ cations from NaRhO2 and intercalating water molecules using an aqueous solution of Na2S2O8. Synchrotron X-ray powder diffraction, thermogravimetric analysis (TGA), and energy-dispersive x-ray analysis (EDX) reveal that a non-stoichiometric Na03(H2O)06 network separates layers of edge-sharing RhO6 octahedra containing Rh3+(4d6, S=0)… ▽ More We have prepared the oxyhydrate Na03RhO206H2O by extracting Na+ cations from NaRhO2 and intercalating water molecules using an aqueous solution of Na2S2O8. Synchrotron X-ray powder diffraction, thermogravimetric analysis (TGA), and energy-dispersive x-ray analysis (EDX) reveal that a non-stoichiometric Na03(H2O)06 network separates layers of edge-sharing RhO6 octahedra containing Rh3+(4d6, S=0) and Rh4+ (4d5, S=1/2). The resistivities of NaRhO2 and Na03RhO206H2O (T < 300) reveal insulating and semi-conducting behavior with activation gaps of 134 meV and 7.8 meV, respectively. Both Na03RhO206H2O and NaRhO2 show paramagnetism at room temperature, however, the sodium-deficient sample exhibits simultaneously a weak but experimentally reproducible ferromagnetic component. Both samples exhibit a temperature-independent Pauli paramagnetism, for NaRhO2 at T > 50 K and for Na03RhO206H2O at T > 25 K. The relative magnitudes of the temperature-independent magnetic susceptibilities, that of the oxide sample being half that of the oxyhydrate, is consistent with a higher density of thermally accessible electron states at the Fermi level in the hydrated sample. At low temperatures the magnetic moments rise sharply, providing evidence of localized and weakl -ordered electronic spins. △ Less

Submitted 31 March, 2005; originally announced April 2005.

Comments: 15 fages 5 figures Solid State Communications in print

Quantum Dots and Etch-Induced Depletion of a Silicon 2DEG

Authors: L. J. Klein, K. L. M. Lewis, K. A. Slinker, Srijit Goswami, D. W. van der Weide, R. H. Blick, P. M. Mooney, J. O. Chu, S. N. Coppersmith, Mark Friesen, Mark A. Eriksson

Abstract: The controlled depletion of electrons in semiconductors is the basis for numerous devices. Reactive-ion etching provides an effective technique for fabricating both classical and quantum devices. However, Fermi level pinning can occur, and must be carefully considered in the development of small devices, such as quantum dots. Because of depletion, the electrical size of the device is reduced in… ▽ More The controlled depletion of electrons in semiconductors is the basis for numerous devices. Reactive-ion etching provides an effective technique for fabricating both classical and quantum devices. However, Fermi level pinning can occur, and must be carefully considered in the development of small devices, such as quantum dots. Because of depletion, the electrical size of the device is reduced in comparison with its physical dimension. To investigate this issue, we fabricate several types of devices in silicon-germanium heterostructures using two different etches, CF$_4$ and SF$_6$. We estimate the depletion width associated with each etch by two methods: (i) conductance measurements in etched wires of decreasing thickness (to determine the onset of depletion), (ii) capacitance measurements of quantum dots (to estimate the size of the active region). We find that the SF$_6$ etch causes a much smaller depletion width, making it more suitable for device fabrication. △ Less

Submitted 31 March, 2005; originally announced March 2005.

Comments: 7 pages, 10 figures

Journal ref: Journal of Applied Physics v99, p023509 (2006)

Electron spin coherence in Si/SiGe quantum wells

Authors: J. L. Truitt, K. A. Slinker, K. L. M. Lewis, D. E. Savage, Charles Tahan, L. J. Klein, Robert Joynt, M. G. Lagally, D. W. van der Weide, S. N. Coppersmith, M. A. Eriksson, A. M. Tyryshkin, J. O. Chu, P. M. Mooney

Abstract: The mechanisms limiting the spin coherence time of electrons are of great importance for spintronics. We present electron spin resonance (ESR) and transport measurements of six different two dimensional electron gases in silicon/silicon-germanium (Si/SiGe 2DEGs). The spin decoherence time $T_2^*$ is presented in conjunction with the 2DEG density $n_e$ and momentum scattering time $τ_p$ as measur… ▽ More The mechanisms limiting the spin coherence time of electrons are of great importance for spintronics. We present electron spin resonance (ESR) and transport measurements of six different two dimensional electron gases in silicon/silicon-germanium (Si/SiGe 2DEGs). The spin decoherence time $T_2^*$ is presented in conjunction with the 2DEG density $n_e$ and momentum scattering time $τ_p$ as measured from transport experiments. A pronounced dependence of $T_2^*$ on the orientation of the applied magnetic field with respect to 2DEG layer is found which is not consistent with that expected from any mechanism described in the literature. △ Less

Submitted 29 November, 2004; originally announced November 2004.

Comments: 4 pages, 4 figures, 1 table

Stable fourfold configurations for small vacancy clusters in silicon from ab initio calculations

Authors: D. V. Makhov, Laurent J. Lewis

Abstract: Using density-functional-theory calculations, we have identified new stable configurations for tri-, tetra-, and penta-vacancies in silicon. These new configurations consist of combinations of a ring-hexavacancy with three, two, or one interstitial atoms, respectively, such that all atoms remain fourfold. As a result, their formation energies are lower by 0.6, 1.0, and 0.6 eV, respectively, than… ▽ More Using density-functional-theory calculations, we have identified new stable configurations for tri-, tetra-, and penta-vacancies in silicon. These new configurations consist of combinations of a ring-hexavacancy with three, two, or one interstitial atoms, respectively, such that all atoms remain fourfold. As a result, their formation energies are lower by 0.6, 1.0, and 0.6 eV, respectively, than the ``part of a hexagonal ring'' configurations, believed up to now to be the lowest-energy states. △ Less

Submitted 7 May, 2004; originally announced May 2004.

Coulomb Blockade in a Silicon/Silicon-Germanium Two-Dimensional Electron Gas Quantum Dot

Authors: L. J. Klein, K. A. Slinker, J. L. Truitt, S. Goswami, K. L. M. Lewis, S. N. Coppersmith, D. W. van der Weide, Mark Friesen, R. H. Blick, D. E. Savage, M. G. Lagally, Charles Tahan, Robert Joynt, M. A. Eriksson, J. O. Chu, J. A. Ott, P. M. Mooney

Abstract: We report the fabrication and electrical characterization of a single electron transistor in a modulation doped silicon/silicon-germanium heterostructure. The quantum dot is fabricated by electron beam lithography and subsequent reactive ion etching. The dot potential and electron density are modified by laterally defined side gates in the plane of the dot. Low temperature measurements show Coul… ▽ More We report the fabrication and electrical characterization of a single electron transistor in a modulation doped silicon/silicon-germanium heterostructure. The quantum dot is fabricated by electron beam lithography and subsequent reactive ion etching. The dot potential and electron density are modified by laterally defined side gates in the plane of the dot. Low temperature measurements show Coulomb blockade with a single electron charging energy of 3.2 meV. △ Less

Submitted 20 April, 2004; v1 submitted 16 April, 2004; originally announced April 2004.

Comments: Typos corrected; to appear in Appl. Phys. Lett

Journal ref: Appl. Phys. Lett. v84, p4047 (2004)

Stability of strained heteroepitaxial systems in (1+1) dimensions

Authors: P. Thibault, L. J. Lewis

Abstract: We present a simple analytical model for the determination of the stable phases of strained heteroepitaxial systems in (1+1) dimensions. In order for this model to be consistent with a subsequent dynamic treatment, all expressions are adjusted to an atomistic Lennard-Jones system. Good agreement is obtained when the total energy is assumed to consist of two contributions: the surface energy and… ▽ More We present a simple analytical model for the determination of the stable phases of strained heteroepitaxial systems in (1+1) dimensions. In order for this model to be consistent with a subsequent dynamic treatment, all expressions are adjusted to an atomistic Lennard-Jones system. Good agreement is obtained when the total energy is assumed to consist of two contributions: the surface energy and the elastic energy. As a result, we determine the stable phases as a function of the main ``control parameters'' (binding energies, coverage and lattice mismatch). We find that there exists no set of parameters leading to an array of islands as a stable configuration. We however show that a slight modification of the model can lead to the formation of stable arrays of islands. △ Less

Submitted 17 December, 2003; originally announced December 2003.

Comments: 11 pages, 14 figures, submitted to Physical Review B

Vibrational Properties of Nanoscale Materials: From Nanoparticles to Nanocrystalline Materials

Authors: R. Meyer, L. J. Lewis, S. Prakash, P. Entel

Abstract: The vibrational density of states (VDOS) of nanoclusters and nanocrystalline materials are derived from molecular-dynamics simulations using empirical tight-binding potentials. The results show that the VDOS inside nanoclusters can be understood as that of the corresponding bulk system compressed by the capillary pressure. At the surface of the nanoparticles the VDOS exhibits a strong enhancemen… ▽ More The vibrational density of states (VDOS) of nanoclusters and nanocrystalline materials are derived from molecular-dynamics simulations using empirical tight-binding potentials. The results show that the VDOS inside nanoclusters can be understood as that of the corresponding bulk system compressed by the capillary pressure. At the surface of the nanoparticles the VDOS exhibits a strong enhancement at low energies and shows structures similar to that found near flat crystalline surfaces. For the nanocrystalline materials an increased VDOS is found at high and low phonon energies, in agreement with experimental findings. The individual VDOS contributions from the grain centers, grain boundaries, and internal surfaces show that, in the nanocrystalline materials, the VDOS enhancements are mainly caused by the grain-boundary contributions and that surface atoms play only a minor role. Although capillary pressures are also present inside the grains of nanocrystalline materials, their effect on the VDOS is different than in the cluster case which is probably due to the inter-grain coupling of the modes via the grain-boundaries. △ Less

Submitted 26 August, 2003; originally announced August 2003.

Comments: 10 pages, 7 figures, accepted for publication in Phys. Rev. B

Relaxation kinetics in two-dimensional structures

Authors: Jose L. Iguain, Laurent J. Lewis

Abstract: We have studied the approach to equilibrium of islands and pores in two dimensions. The two-regime scenario observed when islands evolve according to a set of particular rules, namely relaxation by steps at low temperature and smooth at high temperature, is generalized to a wide class of kinetic models and the two kinds of structures. Scaling laws for equilibration times are analytically derived… ▽ More We have studied the approach to equilibrium of islands and pores in two dimensions. The two-regime scenario observed when islands evolve according to a set of particular rules, namely relaxation by steps at low temperature and smooth at high temperature, is generalized to a wide class of kinetic models and the two kinds of structures. Scaling laws for equilibration times are analytically derived and confirmed by kinetic Monte Carlo simulations. △ Less

Submitted 16 June, 2003; originally announced June 2003.

Comments: 6 pages, 7 figures, 1 table

Core-level spectroscopy of Si/SiO_2 quantum wells: evidence for confined states

Authors: Pierre Carrier, Zheng-Hong Lu, M. W. Chandre Dharma-wardana, Laurent J. Lewis

Abstract: We present an experimental and theoretical study of the conduction states of crystalline Si films confined within amorphous SiO_2 barriers, using the Si-2p core-level excitations. The spectral peaks near the conduction band minimum are compared with the bulk silicon spectrum. In the Si quantum wells, it is found that the conduction band minimum and the low-lying peaks undergo a blue shift while… ▽ More We present an experimental and theoretical study of the conduction states of crystalline Si films confined within amorphous SiO_2 barriers, using the Si-2p core-level excitations. The spectral peaks near the conduction band minimum are compared with the bulk silicon spectrum. In the Si quantum wells, it is found that the conduction band minimum and the low-lying peaks undergo a blue shift while all higher peaks remain unshifted. The experimental results are supported by calculations using recent first-principles structural models for Si/SiO_2 superlattices. The experimental results suggest that all conduction states up to a given conduction band offset become confined and blue-shifted while those at higher energies are not confined and undergo no shift. These results provide unambiguous evidence that the visible-light emitting properties of Si/SiO_2 structures depend strongly on electron confinement effects. △ Less

Submitted 27 August, 2002; originally announced August 2002.

Comments: 4 pages, 4 figures, submitted to Physical Review Letter (August 27, 2002)

Stacking-fault energies for Ag, Cu, and Ni from empirical tight-binding potentials

Authors: R. Meyer, L. J. Lewis

Abstract: The intrinsic stacking-fault energies and free energies for Ag, Cu, and Ni are derived from molecular-dynamics simulations using the empirical tight-binding potentials of Cleri and Rosato [Phys. Rev. B 48, 22 (1993)]. While the results show significant deviations from experimental data, the general trend between the elements remains correct. This allows to use the potentials for qualitative comp… ▽ More The intrinsic stacking-fault energies and free energies for Ag, Cu, and Ni are derived from molecular-dynamics simulations using the empirical tight-binding potentials of Cleri and Rosato [Phys. Rev. B 48, 22 (1993)]. While the results show significant deviations from experimental data, the general trend between the elements remains correct. This allows to use the potentials for qualitative comparisons between metals with high and low stacking-fault energies. Moreover, the effect of stacking faults on the local vibrational properties near the fault is examined. It turns out that the stacking fault has the strongest effect on modes in the center of the transverse peak and its effect is localized in a region of approximately eight monolayers around the defect. △ Less

Submitted 12 July, 2002; originally announced July 2002.

Comments: 5 pages, 2 figures, accepted for publication in Phys. Rev. B

Journal ref: Phys. Rev. B 66, 052106 (2002)

Optical properties of structurally-relaxed Si/SiO$_2$ superlattices: the role of bonding at interfaces

Authors: Pierre Carrier, Laurent J. Lewis, M. W. Chandre Dharma-wardana

Abstract: We have constructed microscopic, structurally-relaxed atomistic models of Si/SiO$_2$ superlattices. The structural distortion and oxidation-state characteristics of the interface Si atoms are examined in detail. The role played by the interface Si suboxides in raising the band gap and producing dispersionless energy bands is established. The suboxide atoms are shown to generate an abrupt interfa… ▽ More We have constructed microscopic, structurally-relaxed atomistic models of Si/SiO$_2$ superlattices. The structural distortion and oxidation-state characteristics of the interface Si atoms are examined in detail. The role played by the interface Si suboxides in raising the band gap and producing dispersionless energy bands is established. The suboxide atoms are shown to generate an abrupt interface layer about 1.60 Åthick. Bandstructure and optical-absorption calculations at the Fermi Golden rule level are used to demonstrate that increasing confinement leads to (a) direct bandgaps (b) a blue shift in the spectrum, and (c) an enhancement of the absorption intensity in the threshold-energy region. Some aspects of this behaviour appear not only in the symmetry direction associated with the superlattice axis, but also in the orthogonal plane directions. We conclude that, in contrast to Si/Ge, Si/SiO$_2$ superlattices show clear optical enhancement and a shift of the optical spectrum into the region useful for many opto-electronic applications. △ Less

Submitted 25 January, 2002; v1 submitted 14 November, 2001; originally announced November 2001.

Comments: 11 pages, 10 figures (submitted to Phys. Rev. B)

Point defects in models of amorphous silicon and their role in structural relaxation

Authors: Cristiano L. Dias, Laurent J. Lewis, S. Roorda

Abstract: We have used tight-binding molecular-dynamics simulations to investigate the role of point defects (vacancies and interstitials) on structural relaxation in amorphous silicon. Our calculations give unambiguous evidence that point defects can be defined in the amorphous solid, showing up as anomalies in the valence-charge/Voronoi-volume relation. The changes in the radial distribution functions t… ▽ More We have used tight-binding molecular-dynamics simulations to investigate the role of point defects (vacancies and interstitials) on structural relaxation in amorphous silicon. Our calculations give unambiguous evidence that point defects can be defined in the amorphous solid, showing up as anomalies in the valence-charge/Voronoi-volume relation. The changes in the radial distribution functions that take place during annealing are shown to be in close agreement with recent, highly-accurate x-ray diffraction measurements. Our calculations provide strong evidence that structural relaxation in a-Si proceeds by the mutual annihilation of vacancies and interstitials, i.e., local structural changes rather than an overall relaxation of the network. △ Less

Submitted 8 August, 2001; originally announced August 2001.

Comments: 6 pages including 2 .eps figures; submitted to Physical Review Letters; additional publications on this and related topics can be found on web site http://www.esi.umontreal.ca/~grofnum

Vibrations of amorphous, nanometric structures: When does continuum theory apply?

Authors: J. P. Wittmer, A. Tanguy, J. -L. Barrat, L. Lewis

Abstract: Structures involving solid particles of nanometric dimensions play an increasingly important role in material sciences. These structures are often characterized through the vibrational properties of their constituent particles, which can be probed by spectroscopic methods. Interpretation of such experimental data requires an extension of continuum elasticity theory down to increasingly small sca… ▽ More Structures involving solid particles of nanometric dimensions play an increasingly important role in material sciences. These structures are often characterized through the vibrational properties of their constituent particles, which can be probed by spectroscopic methods. Interpretation of such experimental data requires an extension of continuum elasticity theory down to increasingly small scales. Using numerical simulation and exact diagonalization for simple models, we show that continuum elasticity, applied to disordered system, actually breaks down below a length scale of typically 30 to 50 molecular sizes. This length scale is likely related to the one which is generally invoked to explain the peculiar vibrational properties of glassy systems. △ Less

Submitted 14 November, 2001; v1 submitted 26 April, 2001; originally announced April 2001.

Comments: 4 pages, 5 figures, LATEX, Europhysics Letters accepted

Structural properties of silicon dioxide thin films densified by medium-energy particles

Authors: Alexis Lefevre, Laurent J. Lewis, Ludvik Martinu, Michael R. Wertheimer

Abstract: Classical molecular-dynamics simulations have been carried out to investigate densification mechanisms in silicon dioxide thin films deposited on an amorphous silica surface, according to a simplified ion-beam assisted deposition (IBAD) scenario. We compare the structures resulting from the deposition of near-thermal (1 eV) SiO$_{2}$ particles to those obtained with increasing fraction of 30 eV… ▽ More Classical molecular-dynamics simulations have been carried out to investigate densification mechanisms in silicon dioxide thin films deposited on an amorphous silica surface, according to a simplified ion-beam assisted deposition (IBAD) scenario. We compare the structures resulting from the deposition of near-thermal (1 eV) SiO$_{2}$ particles to those obtained with increasing fraction of 30 eV SiO$_{2}$ particles. Our results show that there is an energy interval - between 12 and 15 eV per condensing SiO$_2$ unit on average - for which the growth leads to a dense, low-stress amorphous structure, in satisfactory agreement with the results of low-energy ion-beam experiments. We also find that the crossover between low- and high-density films is associated with a tensile to compressive stress transition, and a simultaneous healing of structural defects of the {\em a-}SiO$_2$ network, namely three- and four-fold rings. It is observed, finally, that densification proceeds through significant changes at intermediate length scales (4--10 Å), leaving essentially unchanged the ``building blocks'' of the network, viz. the Si(O$_{1/2}$)$_{4}$ tetrahedra. This latter result is in qualitative agreement with the mechanism proposed to explain the irreversible densification of amorphous silica recovered from high pressures ($\sim$ 15--20 GPa). △ Less

Submitted 15 March, 2001; originally announced March 2001.

Comments: 12 pages including 10 postscript figures; submitted to Phys. Rev. B; related publications can be found on web site http://www.centrcn.umontreal.ca/~lewis

Molecular-dynamics thermal annealing model of laser ablation of silicon

Authors: Patrick Lorazo, Laurent J. Lewis, Michel Meunier

Abstract: A molecular-dynamics thermal annealing model is proposed to investigate the mechanisms involved in picosecond pulsed laser ablation of crystalline silicon. In accordance with the thermal annealing model, a detailed description of the microscopic processes which result from the interaction of a 308 nm, 10 ps, Gaussian pulse with a Si(100) substrate has been embedded into a molecular-dynamics sche… ▽ More A molecular-dynamics thermal annealing model is proposed to investigate the mechanisms involved in picosecond pulsed laser ablation of crystalline silicon. In accordance with the thermal annealing model, a detailed description of the microscopic processes which result from the interaction of a 308 nm, 10 ps, Gaussian pulse with a Si(100) substrate has been embedded into a molecular-dynamics scheme. This was accomplished by explicitly accounting for carrier-phonon scattering and carrier diffusion. Below the predicted threshold fluence for ablation, $F_{th}=0.25 \text{J/cm}^{2}$, a surface breathing mode indicates that the solid restores internal equilibrium by the generation of pressure waves. Above $F_{th}$, our simulations reveal that matter removal is triggered by subsurface superheating effects: intense heating of the material leads to the thermal confinement of the laser-deposited energy. As a result, the material is overheated up to a temperature corresponding to the critical point of silicon and a strong pressure gradient builds up within the absorbing volume. At the same time, diffusion of the carriers into the bulk leads to the development of a steep temperature gradient beneath the surface. Matter removal is subsequently driven by the relaxation of the pressure gradient: large pieces --- several atomic layers thick --- of molten material are expelled from the surface with initial axial velocities of $\sim 1000 \text{m/s}$, their ejection following the nucleation of voids beneath the surface. △ Less

Submitted 15 February, 2001; originally announced February 2001.

Comments: 15 pages, 14 figures (19 postscript files) included; submitted to Physical Review B; additional information on web site http://www.centrcn.umontreal.ca/~lewis