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Mott resistive switching initiated by topological defects
Authors:
Alessandra Milloch,
Ignacio Figueruelo-Campanero,
Wei-Fan Hsu,
Selene Mor,
Simon Mellaerts,
Francesco Maccherozzi,
Larissa Ishibe Veiga,
Sarnjeet S. Dhesi,
Mauro Spera,
Jin Won Seo,
Jean-Pierre Locquet,
Michele Fabrizio,
Mariela Menghini,
Claudio Giannetti
Abstract:
Resistive switching is the fundamental process that triggers the sudden change of the electrical properties in solid-state devices under the action of intense electric fields. Despite its relevance for information processing, ultrafast electronics, neuromorphic devices, resistive memories and brain-inspired computation, the nature of the local stochastic fluctuations that drive the formation of me…
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Resistive switching is the fundamental process that triggers the sudden change of the electrical properties in solid-state devices under the action of intense electric fields. Despite its relevance for information processing, ultrafast electronics, neuromorphic devices, resistive memories and brain-inspired computation, the nature of the local stochastic fluctuations that drive the formation of metallic nuclei out of the insulating state has remained hidden. Here, using operando X-ray nano-imaging, we have captured the early-stages of resistive switching in a V2O3-based device under working conditions. V2O3 is a paradigmatic Mott material, which undergoes a first-order metal-to-insulator transition coupled to a lattice transformation that breaks the threefold rotational symmetry of the rhombohedral metal phase. We reveal a new class of volatile electronic switching triggered by nanoscale topological defects of the lattice order parameter of the insulating phase. Our results pave the way to the use of strain engineering approaches to manipulate topological defects and achieve the full control of the electronic Mott switching. The concept of topology-driven reversible electronic transition is of interest for a broad class of quantum materials, comprising transition metal oxides, chalcogenides and kagome metals, that exhibit first-order electronic transitions coupled to a symmetry-breaking order.
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Submitted 1 February, 2024;
originally announced February 2024.
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Confinement-Induced Isosymmetric Metal-Insulator Transition in Ultrathin Epitaxial V2O3 Films
Authors:
Simon Mellaerts,
Claudio Bellani,
Wei-Fan Hsu,
Alberto Binetti,
Koen Schouteden,
Maria Recaman-Payo,
Mariela Menghini,
Juan Rubio Zuazo,
Jesús López Sánchez,
Jin Won Seo,
Michel Houssa,
Jean-Pierre Locquet
Abstract:
Dimensional confinement has shown to be an effective strategy to tune competing degrees of freedom in complex oxides. Here, we achieved atomic layered growth of trigonal vanadium sesquioxide (V2O3) by means of oxygen-assisted molecular beam epitaxy. This led to a series of high-quality epitaxial ultrathin V2O3 films down to unit cell thickness, enabling the study of the intrinsic electron correlat…
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Dimensional confinement has shown to be an effective strategy to tune competing degrees of freedom in complex oxides. Here, we achieved atomic layered growth of trigonal vanadium sesquioxide (V2O3) by means of oxygen-assisted molecular beam epitaxy. This led to a series of high-quality epitaxial ultrathin V2O3 films down to unit cell thickness, enabling the study of the intrinsic electron correlations upon confinement. By electrical and optical measurements, we demonstrate a dimensional confinement-induced metal-insulator transition in these ultrathin films. We shed light on the Mott-Hubbard nature of this transition, revealing an abrupt vanishing of the quasiparticle weight as demonstrated by photoemission spectroscopy. Furthermore, we prove that dimensional confinement acts as an effective out-of-plane stress. This highlights the structural component of correlated oxides in a confined architecture, while opening an avenue to control both in-plane and out-of-plane lattice components by epitaxial strain and confinement, respectively.
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Submitted 7 December, 2023;
originally announced December 2023.
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Coherent control of the orbital occupation driving the insulator-to-metal Mott transition in V$_2$O$_3$
Authors:
Paolo Franceschini,
Veronica R. Policht,
Alessandra Milloch,
Andrea Ronchi,
Selene Mor,
Simon Mellaerts,
Wei-Fan Hsu,
Stefania Pagliara,
Gabriele Ferrini,
Francesco Banfi,
Michele Fabrizio,
Mariela Menghini,
Jean-Pierre Locquet,
Stefano Dal Conte,
Giulio Cerullo,
Claudio Giannetti
Abstract:
Managing light-matter interactions on timescales faster than the loss of electronic coherence is key for achieving full quantum control of the final products in solid-solid transformations. In this work, we demonstrate coherent electronic control of the photoinduced insulator-to-metal transition in the prototypical Mott insulator V$_2$O$_3$. Selective excitation of a specific interband transition…
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Managing light-matter interactions on timescales faster than the loss of electronic coherence is key for achieving full quantum control of the final products in solid-solid transformations. In this work, we demonstrate coherent electronic control of the photoinduced insulator-to-metal transition in the prototypical Mott insulator V$_2$O$_3$. Selective excitation of a specific interband transition with two phase-locked light pulses manipulates the orbital occupation of the correlated bands in a way that depends on the coherent evolution of the photoinduced superposition of states. A comparison between experimental results and numerical solutions of the optical Bloch equations provides an electronic coherence time on the order of 5 fs. Temperature-dependent experiments suggest that the electronic coherence time is enhanced in the vicinity of the insulator-to-metal transition critical temperature, thus highlighting the role of fluctuations in determining the electronic coherence. These results open new routes to selectively switch the functionalities of quantum materials and coherently control solid-solid electronic transformations.
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Submitted 12 May, 2023; v1 submitted 3 November, 2022;
originally announced November 2022.
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Hole-doping induced ferromagnetism in 2D materials
Authors:
R. Meng,
L. M. C. Pereira,
J. P. Locquet,
V. V. Afanas'ev,
G. Pourtois,
M. Houssa
Abstract:
Two-dimensional (2D) ferromagnetic materials are considered as promising candidates for the future generations of spintronic devices. Yet, 2D materials with intrinsic ferromagnetism are scarce. High-throughput first-principles simulations are performed in order to screen 2D materials that present a non-magnetic to a ferromagnetic transition upon hole doping. A global evolutionary search is subsequ…
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Two-dimensional (2D) ferromagnetic materials are considered as promising candidates for the future generations of spintronic devices. Yet, 2D materials with intrinsic ferromagnetism are scarce. High-throughput first-principles simulations are performed in order to screen 2D materials that present a non-magnetic to a ferromagnetic transition upon hole doping. A global evolutionary search is subsequently performed, in order to identify alternative possible atomic structures of the eligible candidates, and 122 materials exhibiting a hole-doping induced ferromagnetism are identified. Their energetic and dynamic stability, as well as their magnetic properties under hole doping are investigated systematically. Half of these 2D materials are metal halides, followed by chalcogenides, oxides and nitrides, some of them having predicted Curie temperatures above 300 K. The exchange interactions responsible for the ferromagnetic order in these 2D materials are also discussed. This work not only provides theoretical insights into hole-doped 2D ferromagnetic materials, but also enriches the family of 2D magnetic materials for possible spintronic applications.
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Submitted 5 April, 2022; v1 submitted 4 April, 2022;
originally announced April 2022.
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Ultrafast loss of lattice coherence in the light-induced structural phase transition of V$_2$O$_3$
Authors:
A. S. Johnson,
D. Moreno-Mencía,
E. B. Amuah,
M. Menghini,
J. -P. Locquet,
C. Giannetti,
E. Pastor,
S. E. Wall
Abstract:
In solids, the response of the lattice to photo-excitation is often described by the inertial evolution on an impulsively modified potential energy surface which leads to coherent motion. However, it remains unknown if vibrational coherence is sustained through a phase transition, during which coupling between modes can be strong and may lead to rapid loss of coherence. Here we use coherent phonon…
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In solids, the response of the lattice to photo-excitation is often described by the inertial evolution on an impulsively modified potential energy surface which leads to coherent motion. However, it remains unknown if vibrational coherence is sustained through a phase transition, during which coupling between modes can be strong and may lead to rapid loss of coherence. Here we use coherent phonon spectroscopy to track lattice coherence in the structural phase transition of V$_2$O$_3$. In both the low and high symmetry phases unique coherent phonon modes are generated at low fluence. However, coherence is lost when driving between the low and high symmetry phases. Our results suggest non-inertial dynamics dominate during phase transition due to disorder and multi-mode coupling.
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Submitted 13 December, 2022; v1 submitted 20 January, 2022;
originally announced January 2022.
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On the origin of supertetragonality in BaTiO$_3$
Authors:
Simon Mellaerts,
Jin Won Seo,
Valeri Afanas'ev,
Michel Houssa,
Jean-Pierre Locquet
Abstract:
Understanding ferroelectricity is of both fundamental and technological importance to further stimulate the development of new materials designs and manipulations. Here, we perform an in-depth first-principle study on the well-known ferroelectric barium titanate BaTiO$_{3}$ under a hydrostatic negative pressure, showing an isosymmetric phase transition to a supertetragonal phase with high $c/a$ ra…
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Understanding ferroelectricity is of both fundamental and technological importance to further stimulate the development of new materials designs and manipulations. Here, we perform an in-depth first-principle study on the well-known ferroelectric barium titanate BaTiO$_{3}$ under a hydrostatic negative pressure, showing an isosymmetric phase transition to a supertetragonal phase with high $c/a$ ratio of $\sim1.3$. The microscopic origin and driving mechanisms of this phase transition are identified as a drastic change of the covalently $π$-bonded electrons. These findings provide guidance in the search for new supertetragonal phases, with great opportunities for novel multiferroic materials; and can be generalized in the understanding of other isosymmetric phase transitions.
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Submitted 19 January, 2022;
originally announced January 2022.
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Nanoscale self-organisation and metastable non-thermal metallicity in Mott insulators
Authors:
Andrea Ronchi,
Paolo Franceschini,
Andrea De Poli,
Pía Homm,
Ann Fitzpatrick,
Francesco Maccherozzi,
Gabriele Ferrini,
Francesco Banfi,
Sarnjeet S. Dhesi,
Mariela Menghini,
Michele Fabrizio,
Jean-Pierre Locquet,
Claudio Giannetti
Abstract:
Mott transitions in real materials are first order and almost always associated with lattice distortions, both features promoting the emergence of nanotextured phases. This nanoscale self-organization creates spatially inhomogeneous regions, which can host and protect transient non-thermal electronic and lattice states triggered by light excitation.
Here, we combine time-resolved X-ray microscop…
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Mott transitions in real materials are first order and almost always associated with lattice distortions, both features promoting the emergence of nanotextured phases. This nanoscale self-organization creates spatially inhomogeneous regions, which can host and protect transient non-thermal electronic and lattice states triggered by light excitation.
Here, we combine time-resolved X-ray microscopy with a Landau-Ginzburg functional approach for calculating the strain and electronic real-space configurations. We investigate V$_2$O$_3$, the archetypal Mott insulator in which nanoscale self-organization already exists in the low-temperature monoclinic phase and strongly affects the transition towards the high-temperature corundum metallic phase. Our joint experimental-theoretical approach uncovers a remarkable out-of-equilibrium phenomenon: the photo-induced stabilisation of the long sought monoclinic metal phase, which is absent at equilibrium and in homogeneous materials, but emerges as a metastable state solely when light excitation is combined with the underlying nanotexture of the monoclinic lattice.
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Submitted 28 June, 2022; v1 submitted 10 September, 2021;
originally announced September 2021.
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An efficient direct band-gap transition in germanium by three-dimensional strain
Authors:
Simon Mellaerts,
Valeri Afanasiev,
Jin Won Seo,
Michel Houssa,
Jean-Pierre Locquet
Abstract:
Complementary to the development of highly three-dimensional (3D) integrated circuits in the continuation of Moore's law, there has been a growing interest in new 3D deformation strategies to improve device performance. To continue this search for new 3D deformation techniques, it is essential to explore beforehand - using computational predictive methods - which strain tensor leads to the desired…
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Complementary to the development of highly three-dimensional (3D) integrated circuits in the continuation of Moore's law, there has been a growing interest in new 3D deformation strategies to improve device performance. To continue this search for new 3D deformation techniques, it is essential to explore beforehand - using computational predictive methods - which strain tensor leads to the desired properties. In this work, we study germanium (Ge) under an isotropic 3D strain on the basis of first-principle methods. The transport and optical properties are studied by a fully ab initio Boltzmann transport equation and many-body Bethe-Salpeter equation (BSE) approach, respectively. Our findings show that a direct band gap in Ge could be realized with only 0.34% triaxial tensile strain (negative pressure) and without the challenges associated with Sn doping. At the same time a significant increase in refractive index and carrier mobility - particularly for electrons - is observed. These results demonstrate that there is a huge potential in exploring the 3D deformation space for semiconductors - and potentially many other materials - in order to optimize their properties.
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Submitted 8 June, 2021; v1 submitted 24 February, 2021;
originally announced February 2021.
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Room temperature Mott metal-insulator transition in V2O3 compounds induced via strain-engineering
Authors:
P. Homm,
M. Menghini,
J. W. Seo,
S. Peters,
J. -P. Locquet
Abstract:
Vanadium sesquioxide (V2O3) is an archetypal Mott insulator in which the atomic positions and electron correlations change as temperature, pressure or doping are varied giving rise to different structural, magnetic or electronic phase transitions. Remarkably, the isostructural Mott transition in Cr-doped V2O3 between paramagnetic metallic and insulating phase observed in bulk has been elusive in t…
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Vanadium sesquioxide (V2O3) is an archetypal Mott insulator in which the atomic positions and electron correlations change as temperature, pressure or doping are varied giving rise to different structural, magnetic or electronic phase transitions. Remarkably, the isostructural Mott transition in Cr-doped V2O3 between paramagnetic metallic and insulating phase observed in bulk has been elusive in thin film compounds so far. Here, via continuous lattice deformations induced by heteroepitaxy we demonstrate a room temperature Mott metal-insulator transition in 1.5% Cr-doped and pure V2O3 thin films. By means of a controlled epitaxial strain, not only the structure but also the intrinsic electronic and optical properties of the thin films are stabilized at different intermediate states between the metallic and insulating phases, inaccessible in bulk materials. This leads to films with unique features such as a colossal change in room temperature resistivity (DR/R up to 100,000 %) and a broad range of optical constant values, as consequence of a strain-modulated bandgap. We propose a new phase diagram for pure and Cr-doped V2O3 thin films with the engineered in-plane lattice constant as a tuneable parameter. Our results demonstrate that controlling phase transitions in correlated systems by epitaxial strain offers a radical new approach to create the next generation of Mott devices.
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Submitted 12 January, 2021;
originally announced January 2021.
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Quarter-filled Kane-Mele Hubbard model: Dirac half-metals
Authors:
Simon Mellaerts,
Ruishen Meng,
Valeri Afanasiev,
Jin Won Seo,
Michel Houssa,
Jean-Pierre Locquet
Abstract:
Recent experimental success in the realization of two-dimensional (2D) magnetism has stimulated the search for new magnetic 2D materials with strong magnetic anisotropy and high Curie temperature. One promising subgroup of 2D magnetic systems are Dirac half-metals (DHM) which have gained a lot of interest recently, as they host a high-temperature quantum anomalous Hall effect (QAHE). This article…
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Recent experimental success in the realization of two-dimensional (2D) magnetism has stimulated the search for new magnetic 2D materials with strong magnetic anisotropy and high Curie temperature. One promising subgroup of 2D magnetic systems are Dirac half-metals (DHM) which have gained a lot of interest recently, as they host a high-temperature quantum anomalous Hall effect (QAHE). This article discusses predictions for intrinsic DHMs and identifies them as realizations of the Kane-Mele Hubbard model at quarter filling. This proposed unification contributes to a firmer understanding of these materials and suggests pathways for the discovery of new DHM systems.
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Submitted 9 January, 2021;
originally announced January 2021.
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Two-dimensional honeycomb-kagome V2O3: a robust room-temperature magnetic Chern insulator interfaced with graphene
Authors:
Simon Mellaerts,
Ruishen Meng,
Mariela Menghini,
Valeri Afanasiev,
Jin Won Seo,
Michel Houssa,
Jean-Pierre Locquet
Abstract:
The possibility of dissipationless chiral edge states without the need of an external magnetic field in the quantum anomalous Hall effect (QAHE) offers a great potential in electronic/spintronic applications. The biggest hurdle for the realization of a room-temperature magnetic Chern insulator is to find a structurally stable material with a sufficiently large energy gap and Curie temperature that…
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The possibility of dissipationless chiral edge states without the need of an external magnetic field in the quantum anomalous Hall effect (QAHE) offers a great potential in electronic/spintronic applications. The biggest hurdle for the realization of a room-temperature magnetic Chern insulator is to find a structurally stable material with a sufficiently large energy gap and Curie temperature that can be easily implemented in electronic devices. This work based on first-principle methods shows that a single atomic layer of V2O3 with honeycomb-kagome (HK) lattice is structurally stable with a spin-polarized Dirac cone which gives rise to a room-temperature QAHE by the existence of an atomic on-site spin-orbit coupling (SOC). Moreover, by a strain and substrate study, it was found that the quantum anomalous Hall system is robust against small deformations and can be supported by a graphene substrate.
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Submitted 8 June, 2021; v1 submitted 6 January, 2021;
originally announced January 2021.
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Non-thermal light-assisted resistance collapse in a V$_2$O$_3$-based Mott-insulator device
Authors:
Andrea Ronchi,
Paolo Franceschini,
Pia Homm,
Marco Gandolfi,
Gabriele Ferrini,
Stefania Pagliara,
Francesco Banfi,
Mariela Menghini,
Jean-Pierre Locquet,
Claudio Giannetti
Abstract:
The insulator-to-metal transition in Mott insulators is the key mechanism for a novel class of electronic devices, belonging to the Mottronics family. Intense research efforts are currently devoted to the development of specific control protocols, usually based on the application of voltage, strain, pressure and light excitation. The ultimate goal is to achieve the complete control of the electron…
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The insulator-to-metal transition in Mott insulators is the key mechanism for a novel class of electronic devices, belonging to the Mottronics family. Intense research efforts are currently devoted to the development of specific control protocols, usually based on the application of voltage, strain, pressure and light excitation. The ultimate goal is to achieve the complete control of the electronic phase transformation, with dramatic impact on the performance, for example, of resistive switching devices. Here, we investigate the simultaneous effect of external voltage and excitation by ultrashort light pulses on a single Mottronic device based on a V$_2$O$_3$ epitaxial thin film. The experimental results, supported by finite-element simulations of the thermal problem, demonstrate that the combination of light excitation and external electrical bias drives a volatile resistivity drop which goes beyond the combined effect of laser and Joule heating. Our results impact on the development of protocols for the non-thermal control of the resistive switching transition in correlated materials.
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Submitted 13 April, 2021; v1 submitted 30 December, 2020;
originally announced December 2020.
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Comment on "Unveiling the double-well energy landscape in a ferroelectric layer"
Authors:
J. A. Kittl,
M. Houssa,
V. V. Afanasiev,
J. -P. Locquet
Abstract:
Analysis of data presented in the paper -- Unveiling the double-well energy landscape in a ferroelectric layer, by M. Hoffmann, et al., Nature 565, 464 (2019) -- suggesting the claims of lack of hysteresis and s-curve trajectory are unfounded.
Analysis of data presented in the paper -- Unveiling the double-well energy landscape in a ferroelectric layer, by M. Hoffmann, et al., Nature 565, 464 (2019) -- suggesting the claims of lack of hysteresis and s-curve trajectory are unfounded.
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Submitted 1 March, 2020;
originally announced March 2020.
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A critical analysis of models and experimental evidence of negative capacitance stabilization in a ferroelectric by capacitance matching to an adjacent dielectric layer
Authors:
J. A. Kittl,
J. -P. Locquet,
M. Houssa,
V. V. Afanasiev
Abstract:
We present a thorough analysis of the foundations of models of stabilization of negative capacitance (NC) in a ferroelectric (FE) layer by capacitance matching to a dielectric layer, which claim that the FE is stabilized in a low polarization state without FE polarization switching (non-switching), showing that the concept is fundamentally flawed and unphysical. We also analyze experimental eviden…
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We present a thorough analysis of the foundations of models of stabilization of negative capacitance (NC) in a ferroelectric (FE) layer by capacitance matching to a dielectric layer, which claim that the FE is stabilized in a low polarization state without FE polarization switching (non-switching), showing that the concept is fundamentally flawed and unphysical. We also analyze experimental evidence concluding that there is no data supporting the need to invoke such stabilization; rather, conventional models of ferroelectric polarization switching suffice to account for the effects observed. We analyze experimental evidence that at least in some of the model systems for which this effect has been claimed, categorically rule out stabilized non-switching NC. Microscopic measurements recently published as supporting non-switching stabilized NC actually rule them out, since the ferroelectric in a stack sandwiched between two dielectric layers was found to be in a mixed domain state (high polarizations within each domain) rather than in the low polarization state predicted by non-switching stabilized NC models. Nonetheless, since stabilized NC (corresponding to a minimum in free energy) is not physically impossible, it would be useful to move the research efforts to investigating scenarios and systems in which this effect is possible and expected and assess whether they are useful and practical for low power electronics.
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Submitted 1 March, 2020;
originally announced March 2020.
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Early-stage dynamics of metallic droplets embedded in the nanotextured Mott insulating phase of V$_2$O$_3$
Authors:
Andrea Ronchi,
Pía Homm,
Mariela Menghini,
Paolo Franceschini,
Francesco Maccherozzi,
Francesco Banfi,
Gabriele Ferrini,
Federico Cilento,
Fulvio Parmigiani,
Sarnjeet S. Dhesi,
Michele Fabrizio,
Jean-Pierre Locquet,
Claudio Giannetti
Abstract:
Unveiling the physics that governs the intertwining between the nanoscale self-organization and the dynamics of insulator-to-metal transitions (\textit{IMT}) is key for controlling on demand the ultrafast switching in strongly correlated materials and nano-devices. A paradigmatic case is the \textit{IMT} in V$_2$O$_3$, for which the mechanism that leads to the nucleation and growth of metallic nan…
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Unveiling the physics that governs the intertwining between the nanoscale self-organization and the dynamics of insulator-to-metal transitions (\textit{IMT}) is key for controlling on demand the ultrafast switching in strongly correlated materials and nano-devices. A paradigmatic case is the \textit{IMT} in V$_2$O$_3$, for which the mechanism that leads to the nucleation and growth of metallic nano-droplets out of the supposedly homogeneous Mott insulating phase is still a mystery.
Here, we combine X-ray photoemission electron microscopy and ultrafast non-equilibrium optical spectroscopy to investigate the early stage dynamics of isolated metallic nano-droplets across the \textit{IMT} in V$_2$O$_3$ thin films. Our experiments show that the low-temperature monoclinic antiferromagnetic insulating phase is characterized by the spontaneous formation of striped polydomains, with different lattice distortions. The insulating domain boundaries accommodate the birth of metallic nano-droplets, whose non-equilibrium expansion can be triggered by the photo-induced change of the 3$d$-orbital occupation. We address the relation between the spontaneous nanotexture of the Mott insulating phase in V$_2$O$_3$ and the timescale of the metallic seeds growth. We speculate that the photoinduced metallic growth can proceed along a non-thermal pathway in which the monoclinic lattice symmetry of the insulating phase is partially retained.
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Submitted 6 August, 2019; v1 submitted 10 July, 2018;
originally announced July 2018.
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Ultrafast orbital manipulation and Mott physics in multi-band correlated materials
Authors:
Andrea Ronchi,
Paolo Franceschini,
Laura Fanfarillo,
Pía Homm,
Mariela Menghini,
Simone Peli,
Gabriele Ferrini,
Francesco Banfi,
Federico Cilento,
Andrea Damascelli,
Fulvio Parmigiani,
Jean-Pierre Locquet,
Michele Fabrizio,
Massimo Capone,
Claudio Giannetti
Abstract:
Multiorbital correlated materials are often on the verge of multiple electronic phases (metallic, insulating, super- conducting, charge and orbitally ordered), which can be explored and controlled by small changes of the external parameters. The use of ultrashort light pulses as a mean to transiently modify the band population is leading to fundamentally new results. In this paper we will review r…
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Multiorbital correlated materials are often on the verge of multiple electronic phases (metallic, insulating, super- conducting, charge and orbitally ordered), which can be explored and controlled by small changes of the external parameters. The use of ultrashort light pulses as a mean to transiently modify the band population is leading to fundamentally new results. In this paper we will review recent advances in the field and we will discuss the pos- sibility of manipulating the orbital polarization in correlated multi-band solid state systems. This technique can provide new understanding of the ground state properties of many interesting classes of quantum materials and offers a new tool to induce transient emergent properties with no counterpart at equilibrium. We will address: the discovery of high-energy Mottness in superconducting copper oxides and its impact on our understanding of the cuprate phase diagram; the instability of the Mott insulating phase in photoexcited vanadium oxides; the manipulation of orbital-selective correlations in iron-based superconductors; the pumping of local electronic excitons and the consequent transient effective quasiparticle cooling in alkali-doped fullerides. Finally, we will discuss a novel route to manipulate the orbital polarization in a a k-resolved fashion.
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Submitted 24 January, 2018;
originally announced January 2018.
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Collapse of the low temperature insulating state in Cr-doped V$_2$O$_3$ thin films
Authors:
Pía Homm,
Leander Dillemans,
Mariela Menghini,
Bart Van Bilzen,
Petar Bakalov,
Chen-Yi Su,
Ruben Lieten,
Michel Houssa,
Davoud Nasr Esfahani,
Lucian Covaci,
Francois Peeters,
Jin Won Seo,
Jean-Pierre Locquet
Abstract:
We have grown epitaxial Cr-doped V$_2$O$_3$ thin films with Cr concentrations between $0$ and $20\%$ on $(0001)$-Al$_2$O$_3$ by oxygen-assisted molecular beam epitaxy. For the highly doped samples (> $3\%$), a regular and monotonous increase of the resistance with decreasing temperature is measured. Strikingly, in the low doping samples (between $1\%$ and $3\%$), a collapse of the insulating state…
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We have grown epitaxial Cr-doped V$_2$O$_3$ thin films with Cr concentrations between $0$ and $20\%$ on $(0001)$-Al$_2$O$_3$ by oxygen-assisted molecular beam epitaxy. For the highly doped samples (> $3\%$), a regular and monotonous increase of the resistance with decreasing temperature is measured. Strikingly, in the low doping samples (between $1\%$ and $3\%$), a collapse of the insulating state is observed with a reduction of the low temperature resistivity by up to 5 orders of magnitude. A vacuum annealing at high temperature of the films recovers the low temperature insulating state for doping levels below $3\%$ and increases the room temperature resistivity towards the values of Cr-doped V$_2$O$_3$ single crystals. It is well-know that oxygen excess stabilizes a metallic state in V$_2$O$_3$ single crystals. Hence, we propose that Cr doping promotes oxygen excess in our films during deposition leading to the collapse of the low temperature insulating state at low Cr concentrations. These results suggest that slightly Cr-doped V$_2$O$_3$ films can be interesting candidates for field effect devices.
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Submitted 19 September, 2015;
originally announced September 2015.
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An electric-field driven Mott metal-insulator transition in correlated thin films: an inhomogeneous dynamical mean-field theory approach
Authors:
Petar Bakalov,
Davoud Nasr Esfahani,
Lucian Covaci,
Francois Peeters,
Jacques Tempere,
Jean-Pierre Locquet
Abstract:
Simulations are carried out based on the dynamical mean-field theory (DMFT) in order to investigate the properties of correlated thin films for various values of the chemical potential, temperature, interaction strength, and applied transverse electric field. Application of a sufficiently strong field to a thin film at half-filling leads to the appearance of conducting regions near the surfaces of…
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Simulations are carried out based on the dynamical mean-field theory (DMFT) in order to investigate the properties of correlated thin films for various values of the chemical potential, temperature, interaction strength, and applied transverse electric field. Application of a sufficiently strong field to a thin film at half-filling leads to the appearance of conducting regions near the surfaces of the film, whereas in doped slabs the application of a field leads to a conductivity enhancement on one side of the film and a gradual transition to the insulating state on the opposite side. In addition to the inhomogeneous DMFT, an independent layer approximation (ILA) is considered, in which the properties of each layer are approximated by a homogeneous bulk environment. A comparison between the two approaches reveals that the less expensive ILA results are in good agreement with the DMFT approach, except close to the metal-to-insulator transition points and in the layers immediately at the film surfaces. The hysteretic behavior (memory effect) characteristic of the bulk doping driven Mott transition persists in the slab.
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Submitted 9 March, 2015;
originally announced March 2015.
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The Continuous-Pole-Expansion method to obtain spectra of electronic lattice models
Authors:
Peter Staar,
Bart Ydens,
Anton Kozhevnikov,
Jean-Pierre Locquet,
Thomas Schulthess
Abstract:
We present a new algorithm to analytically continue the self-energy of quantum many-body systems from Matsubara frequencies to the real axis. The method allows straightforward, unambiguous computation of electronic spectra for lattice models of strongly correlated systems from self-energy data that has been collected with state-of-the are continuous time solvers within dynamical mean field simulat…
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We present a new algorithm to analytically continue the self-energy of quantum many-body systems from Matsubara frequencies to the real axis. The method allows straightforward, unambiguous computation of electronic spectra for lattice models of strongly correlated systems from self-energy data that has been collected with state-of-the are continuous time solvers within dynamical mean field simulations. Using well-known analytical properties of the self-energy, the analytic continuation is cast into a constrained minimization problem that can be formulated as a quadratic programmable optimization with linear constraints. The algorithm is validated against exactly solvable finite size problems, showing that all features of the spectral function near the Femi level are very well reproduced and coarse features are reproduced for all energies. The method is applied to two well known lattice problems, the two-dimensional Hubbard model at half filling where the momentum dependence of the gap formation is studied, as well as a multi-band model of NiO, for which the spectral function can be directly compared to experiment. Agreement with results published results is very good.
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Submitted 27 November, 2013;
originally announced November 2013.
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Electrostatic Modulation of the Superfluid Density in a Ultrathin La2-xSrxCuO4 Film
Authors:
A. Rufenacht,
J. -P. Locquet,
J. Fompeyrine,
D. Caimi,
P. Martinoli
Abstract:
By capacitively charging an underdoped ultrathin La2-xSrxCuO4 film with an electric field applied across a gate insulator with a high dielectric constant, relative changes of the areal superfluid density n_{s\Box}$ of unprecedented strength were observed in measurements of the film kinetic inductance. Although $n_{s\Box}…
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By capacitively charging an underdoped ultrathin La2-xSrxCuO4 film with an electric field applied across a gate insulator with a high dielectric constant, relative changes of the areal superfluid density n_{s\Box}$ of unprecedented strength were observed in measurements of the film kinetic inductance. Although $n_{s\Box}$ appears to be substantially reduced by disorder, the data provide, for the first time on the same sample, direct compelling evidence for the Uemura relation $T_{c} \propto n_{s\Box}(T=0)$ in the underdoped regime of copper-oxide superconductors.
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Submitted 25 July, 2006; v1 submitted 3 March, 2006;
originally announced March 2006.
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Growth of Single Unit-Cell Superconducting La$_{2-x}$Sr$_x$CuO$_{4}$ Films
Authors:
A. Rufenacht,
P. Chappatte,
S. Gariglio,
Ch. Leemann,
J. Fompeyrine,
J. -P. Locquet,
P. Martinoli
Abstract:
We have developed an approach to grow high quality ultrathin films of La$_{2-x}$Sr$_x$CuO$_{4}$ with molecular beam epitaxy, by adding a homoepitaxial buffer layer in order to minimize the degradation of the film structure at the interface. The advantage of this method is to enable a further reduction of the minimal thickness of a superconducting La$_{1.9}$Sr$_{0.1}$CuO$_{4}$ film. The main resu…
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We have developed an approach to grow high quality ultrathin films of La$_{2-x}$Sr$_x$CuO$_{4}$ with molecular beam epitaxy, by adding a homoepitaxial buffer layer in order to minimize the degradation of the film structure at the interface. The advantage of this method is to enable a further reduction of the minimal thickness of a superconducting La$_{1.9}$Sr$_{0.1}$CuO$_{4}$ film. The main result of our work is that a single unit cell (only two copper oxide planes) grown on a SrLaAlO$_4$ substrate exhibits a superconducting transition at 12.5 K (zero resistance) and an in-plane magnetic penetration depth $λ_{ab}(0)$ = 535 nm.
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Submitted 13 February, 2003;
originally announced February 2003.
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Dynamic critical properties of the vortex-glass transition derived from angular-dependent properties of La$_{2-x}$Sr$_{x}$CuO$_{4}$ films
Authors:
T. Schneider,
G. I. Meijer,
J. Perret,
J. -P. Locquet,
P. Martinoli
Abstract:
We present resistivity data on a high-quality La$_{2-x}$Sr$_{x}$CuO$_{4-δ}$ film measured in a magnetic field of 1 T applied at an angle $δ$ to the c axis. Using these data, the influence of the orientation of the magnetic field and the effective mass anisotropy on the vortex-glass transition can be studied. The variation of $δ$ for a fixed magnitude of the magnetic field allows us to investigat…
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We present resistivity data on a high-quality La$_{2-x}$Sr$_{x}$CuO$_{4-δ}$ film measured in a magnetic field of 1 T applied at an angle $δ$ to the c axis. Using these data, the influence of the orientation of the magnetic field and the effective mass anisotropy on the vortex-glass transition can be studied. The variation of $δ$ for a fixed magnitude of the magnetic field allows us to investigate the critical properties of interest, including the 2D-to-3D crossover and the 3D vortex glass-to-fluid transition, as the temperature is decreased. The data are well described by the scaling theory for the d.c. resistivity of an anisotropic superconductor in a magnetic field applied at an angle $δ$ to the c axis. This scaling includes the critical properties close to and at the vortex-glass transition. The main results include (i) evidence of a Kosterlitz-Thouless transition in zero field, and (ii) a 2D-to-3D crossover at H=1 T as the temperature is decreased below the zero-field transition temperature, leading to the vortex fluid-to-vortex glass transition in D = 3 characterized by the dynamic critical exponent $z\approx 5.7$.
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Submitted 13 December, 2000;
originally announced December 2000.
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Comparison of the Transport Mechanism in Underdoped High Temperature Superconductors and in Spin Ladders
Authors:
J. Vanacken,
L. Trappeniers,
G. Teniers,
P. Wagner,
K. Rosseel,
J. Perret,
J. -P. Locquet,
V. V. Moshchalkov,
Y. Bruynseraede
Abstract:
Recently, the normal state resistivity of high temperature superconductors (in particular in La2-xSrxCuO4 single crystals) has been studied extensively in the region below Tc by suppressing the superconducting state in high magnetic fields. In the present work we report on the normal state resistance of underdoped La2-xSrxCuO4 thin films under epitaxial strain, measured far below Tc by applying…
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Recently, the normal state resistivity of high temperature superconductors (in particular in La2-xSrxCuO4 single crystals) has been studied extensively in the region below Tc by suppressing the superconducting state in high magnetic fields. In the present work we report on the normal state resistance of underdoped La2-xSrxCuO4 thin films under epitaxial strain, measured far below Tc by applying pulsed fields up to 60 T. We will compare the transport measurements on these high temperature superconductors with transport data reported for the Sr2.5Ca11.5Cu24O41 spin ladder compound. This comparison leads to an interpretation of the data in terms of the recently proposed 1D quantum transport model and the charge-stripe models.
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Submitted 15 November, 1999;
originally announced November 1999.
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Normal State Resistivity of Underdoped YBa2Cu3Ox Thin Films and La2-xSrxCuO4 Ultra-Thin Films under Epitaxial Strain
Authors:
L. Trappeniers,
J. Vanacken,
P. Wagner,
G. Teniers,
S. Curras,
V. V. Moshchalkov,
Y. Bruynseraede,
J. Perret,
P. Martinoli,
Jean-Pierre Locquet
Abstract:
The normal state resistivity of high temperature superconductors can be probed in the region below Tc by suppressing the superconducting state in high magnetic fields. Here we present the normal state properties of YBa2Cu3Ox thin films in the underdoped regime and the normal state resistance of La2-xSrxCuO4 thin films under epitaxial strain, measured below Tc by applying pulsed fields up to 60 T…
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The normal state resistivity of high temperature superconductors can be probed in the region below Tc by suppressing the superconducting state in high magnetic fields. Here we present the normal state properties of YBa2Cu3Ox thin films in the underdoped regime and the normal state resistance of La2-xSrxCuO4 thin films under epitaxial strain, measured below Tc by applying pulsed fields up to 60 T. A universal rho(T) behaviour is reported. We interpret these data in terms of the recently proposed 1D quantum transport model with the 1D paths corresponding to the charge stripes.
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Submitted 4 October, 1999;
originally announced October 1999.
