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Magnetic domain engineering in antiferromagnetic CuMnAs and Mn$_2$Au devices
Authors:
Sonka Reimers,
Olena Gomonay,
Oliver J. Amin,
Filip Krizek,
Luke X. Barton Yaryna Lytvynenko,
Stuart Poole,
Richard P. Campion,
Vit Novák,
Francesco Maccherozzi,
Dina Carbone,
Alexander Björling,
Yuran Niu,
Evangelos Golias,
Dominik Kriegner,
Jairo Sinova,
Mathias Kläui,
Martin Jourdan,
Sarnjeet S. Dhesi,
Kevin W. Edmonds,
Peter Wadley
Abstract:
Antiferromagnetic materials hold potential for use in spintronic devices with fast operation frequencies and field robustness. Despite the rapid progress in proof-of-principle functionality in recent years, there has been a notable lack of understanding of antiferromagnetic domain formation and manipulation, which translates to either incomplete or non-scalable control of the magnetic order. Here,…
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Antiferromagnetic materials hold potential for use in spintronic devices with fast operation frequencies and field robustness. Despite the rapid progress in proof-of-principle functionality in recent years, there has been a notable lack of understanding of antiferromagnetic domain formation and manipulation, which translates to either incomplete or non-scalable control of the magnetic order. Here, we demonstrate simple and functional ways of influencing the domain structure in CuMnAs and Mn2Au, two key materials of antiferromagnetic spintronics research, using device patterning and strain engineering. Comparing x-ray microscopy data from two different materials, we reveal the key parameters dictating domain formation in antiferromagnetic devices and show how the non-trivial interaction of magnetostriction, substrate clamping and edge anisotropy leads to specific equilibrium domain configurations. More specifically, we observe that patterned edges have a significant impact on the magnetic anisotropy and domain structure over long distances, and we propose a theoretical model that relates short-range edge anisotropy and long-range magnetoelastic interactions. The principles invoked are of general applicability to the domain formation and engineering in antiferromagnetic thin films at large, which will pave the way towards realizing truly functional antiferromagnetic devices.
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Submitted 17 April, 2023; v1 submitted 19 February, 2023;
originally announced February 2023.
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Probing the Manipulation of Antiferromagnetic Order in CuMnAs Films Using Neutron Diffraction
Authors:
Stuart F. Poole,
Luke X. Barton,
Mu Wang,
Pascal Manuel,
Dmitri Khalyavin,
Sean Langridge,
Kevin W. Edmonds,
Richard P. Campion,
Vit Novák,
Peter Wadley
Abstract:
We describe measurements of the uniaxial magnetic anisotropy and spin-flop rotation of the Néel vector in antiferromagnetic CuMnAs thin films using neutron diffraction. The suppression of the magnetic (100) peak under magnetic fields is observed for films as thin as 20 nm indicating that they undergo a spin-flop transition. Good agreement is found between neutron diffraction and electron transport…
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We describe measurements of the uniaxial magnetic anisotropy and spin-flop rotation of the Néel vector in antiferromagnetic CuMnAs thin films using neutron diffraction. The suppression of the magnetic (100) peak under magnetic fields is observed for films as thin as 20 nm indicating that they undergo a spin-flop transition. Good agreement is found between neutron diffraction and electron transport measurements of the spin-flop rotation in the same layer, with a similar shape and hysteresis of the obtained curves, while the neutron measurements provide a quantitative determination of the spin flop extent throughout the antiferromagnet layer.
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Submitted 20 October, 2022;
originally announced October 2022.
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Antiferromagnetic half-skyrmions electrically generated and controlled at room temperature
Authors:
O. J. Amin,
S. F. Poole,
S. Reimers,
L. X. Barton,
F. Maccherozzi,
S. S. Dhesi,
V. Novák,
F. Křížek,
J. S. Chauhan,
R. P. Campion,
A. W. Rushforth,
T. Jungwirth,
O. A. Tretiakov,
K. W. Edmonds,
P. Wadley
Abstract:
Topologically protected magnetic textures, such as skyrmions, half-skyrmions (merons) and their antiparticles, constitute tiny whirls in the magnetic order. They are promising candidates for information carriers in next-generation memory devices, as they can be efficiently propelled at very high velocities using current-induced spin torques. Antiferromagnets have been shown to host versions of the…
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Topologically protected magnetic textures, such as skyrmions, half-skyrmions (merons) and their antiparticles, constitute tiny whirls in the magnetic order. They are promising candidates for information carriers in next-generation memory devices, as they can be efficiently propelled at very high velocities using current-induced spin torques. Antiferromagnets have been shown to host versions of these textures, which have gained significant attention because of their potential for terahertz dynamics, deflection free motion, and improved size scaling due to the absence of stray field. Here we show that topological spin textures, merons and antimerons, can be generated at room temperature and reversibly moved using electrical pulses in thin film CuMnAs, a semimetallic antiferromagnet that is a testbed system for spintronic applications. The electrical generation and manipulation of antiferromagnetic merons is a crucial step towards realizing the full potential of antiferromagnetic thin films as active components in high density, high speed magnetic memory devices.
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Submitted 1 July, 2022;
originally announced July 2022.
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Defect-driven antiferromagnetic domain walls in CuMnAs films
Authors:
Sonka Reimers,
Dominik Kriegner,
Olena Gomonay,
Dina Carbone,
Filip Krizek,
Vit Novak,
Richard P. Campion,
Francesco Maccherozzi,
Alexander Bjorling,
Oliver J. Amin,
Luke X. Barton,
Stuart F. Poole,
Khalid A. Omari,
Jan Michalicka,
Ondrej Man,
Jairo Sinova,
Tomas Jungwirth,
Peter Wadley,
Sarnjeet S. Dhesi,
Kevin W. Edmonds
Abstract:
Efficient manipulation of antiferromagnetic (AF) domains and domain walls has opened up new avenues of research towards ultrafast, high-density spintronic devices. AF domain structures are known to be sensitive to magnetoelastic effects, but the microscopic interplay of crystalline defects, strain and magnetic ordering remains largely unknown. Here, we reveal, using photoemission electron microsco…
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Efficient manipulation of antiferromagnetic (AF) domains and domain walls has opened up new avenues of research towards ultrafast, high-density spintronic devices. AF domain structures are known to be sensitive to magnetoelastic effects, but the microscopic interplay of crystalline defects, strain and magnetic ordering remains largely unknown. Here, we reveal, using photoemission electron microscopy combined with scanning X-ray diffraction imaging and micromagnetic simulations, that the AF domain structure in CuMnAs thin films is dominated by nanoscale structural twin defects. We demonstrate that microtwin defects, which develop across the entire thickness of the film and terminate on the surface as characteristic lines, determine the location and orientation of 180 degree and 90 degree domain walls. The results emphasize the crucial role of nanoscale crystalline defects in determining the AF domains and domain walls, and provide a route to optimizing device performance.
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Submitted 7 October, 2021;
originally announced October 2021.
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Spin flop and crystalline anisotropic magnetoresistance in CuMnAs
Authors:
M. Wang,
C. Andrews,
S. Reimers,
O. J. Amin,
P. Wadley,
R. P. Campion,
S. F. Poole,
J. Felton,
K. W. Edmonds,
B. L. Gallagher,
A. W. Rushforth,
O. Makarovsky,
K. Gas,
M. Sawicki,
D. Kriegner,
J. Zubac,
K. Olejnik,
V. Novak,
T. Jungwirth,
M. Shahrokhvand,
U. Zeitler,
S. S. Dhesi,
F. Maccherozzi
Abstract:
Recent research works have shown that the magnetic order in some antiferromagnetic materials can be manipulated and detected electrically, due to two physical mechanisms: Neel-order spin-orbit torques and anisotropic magnetoresistance. While these observations open up opportunities to use antiferromagnets for magnetic memory devices, different physical characterization methods are required for a b…
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Recent research works have shown that the magnetic order in some antiferromagnetic materials can be manipulated and detected electrically, due to two physical mechanisms: Neel-order spin-orbit torques and anisotropic magnetoresistance. While these observations open up opportunities to use antiferromagnets for magnetic memory devices, different physical characterization methods are required for a better understanding of those mechanisms. Here we report a magnetic field induced rotation of the antiferromagnetic Neel vector in epitaxial tetragonal CuMnAs thin films. Using soft x-ray magnetic linear dichroism spectroscopy, x-ray photoemission electron microscopy, integral magnetometry and magneto-transport methods, we demonstrate spin-flop switching and continuous spin reorientation in antiferromagnetic films with uniaxial and biaxial magnetic anisotropies, respectively. From field-dependent measurements of the magnetization and magnetoresistance, we obtain key material parameters including the anisotropic magnetoresistance coefficients, magnetocrystalline anisotropy, spin-flop and exchange fields.
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Submitted 21 June, 2021; v1 submitted 27 November, 2019;
originally announced November 2019.
