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Carrier doping of Bi$_2$Se$_3$ surface by chemical adsorption -- a DFT study
Authors:
Cheng Fan,
Kazuyuki Sakamoto,
Peter Krüger
Abstract:
Bi$_2$Se$_3$ is one of the most promising topological insulators, but it suffers from intrinsic n-doping due to Se-vacancies, which shifts the Fermi level into the bulk conduction band, leading to topologically trivial carriers. Recently it was shown that this Fermi-level shift can be compensated by a locally controlled surface p-doping process, through water adsorption and XUV irradiation. Here,…
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Bi$_2$Se$_3$ is one of the most promising topological insulators, but it suffers from intrinsic n-doping due to Se-vacancies, which shifts the Fermi level into the bulk conduction band, leading to topologically trivial carriers. Recently it was shown that this Fermi-level shift can be compensated by a locally controlled surface p-doping process, through water adsorption and XUV irradiation. Here, the microscopic mechanism of this surface doping is studied by means of density functional theory (DFT) focusing on the adsorption of H$_2$O, OH, O, C and CH on Bi$_2$Se$_3$. We find that water adsorption has a negligible doping effect while hydroxyl groups lead to n-doping. Carbon adsorption on Se vacancies gives rise to p-doping but it also strongly modifies the electronic band structure around the Dirac point. Only if the Se vacancies are filled with atomic oxygen, the experimentally observed p-doping without change of the topological surface bands is reproduced. Based on the DFT results, we propose a reaction path where photon absorption gives rise to water splitting and the produced O atoms fill the Se vacancies. Adsorbed OH groups appear as intermediate states and carbon impurities may have a catalytic effect in agreement with experimental observations.
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Submitted 22 October, 2023;
originally announced October 2023.
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Heterogeneous biological membranes regulate protein partitioning via fluctuating diffusivity
Authors:
Ken Sakamoto,
Takuma Akimoto,
Mayu Muramatsu,
Mark S. P. Sansom,
Ralf Metzler,
Eiji Yamamoto
Abstract:
Cell membranes phase separate into ordered ${\rm L_o}$ and disordered ${\rm L_d}$ domains depending on their compositions. This membrane compartmentalization is heterogeneous and regulates the localization of specific proteins related to cell signaling and trafficking. However, it is unclear how the heterogeneity of the membranes affects the diffusion and localization of proteins in ${\rm L_o}$ an…
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Cell membranes phase separate into ordered ${\rm L_o}$ and disordered ${\rm L_d}$ domains depending on their compositions. This membrane compartmentalization is heterogeneous and regulates the localization of specific proteins related to cell signaling and trafficking. However, it is unclear how the heterogeneity of the membranes affects the diffusion and localization of proteins in ${\rm L_o}$ and ${\rm L_d}$ domains. Here, using Langevin dynamics simulations coupled with the phase-field (LDPF) method, we investigate several tens of milliseconds-scale diffusion and localization of proteins in heterogeneous biological membrane models showing phase separation into ${\rm L_o}$ and ${\rm L_d}$ domains. The diffusivity of proteins exhibits temporal fluctuations depending on the field composition. Increases in molecular concentrations and domain preference of the molecule induce subdiffusive behavior due to molecular collisions by crowding and confinement effects, respectively. Moreover, we quantitatively demonstrate that the protein partitioning into the ${\rm L_o}$ domain is determined by the difference in molecular diffusivity between domains, molecular preference of domain, and molecular concentration. These results pave the way for understanding how biological reactions caused by molecular partitioning may be controlled in heterogeneous media. Moreover, the methodology proposed here is applicable not only to biological membrane systems but also to the study of diffusion and localization phenomena of molecules in various heterogeneous systems.
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Submitted 10 August, 2023; v1 submitted 19 January, 2023;
originally announced January 2023.
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Non-charge-transfer origin of Tc Enhancement in a Surface Superconductor Si(111)-(root7xroot3)-In with Adsorbed Organic Molecules
Authors:
Kenta Yokota,
Shunsuke Inagaki,
Wenxuan Qian,
Ryohei Nemoto,
Shunsuke Yoshizawa,
Emi Minamitani,
Kazuyuki Sakamoto,
Takashi Uchihashi
Abstract:
The effects of adsorption of Zn-phthalocyanine (ZnPc) molecules on the superconductivity of the Si(111)-(root7xroot3)-In surface are studied through transport measurements under ultrahigh vacuum environment. The ZnPc molecules are found to increase the transition temperature Tc by 11% at maximum, which is about 2.7 times the Tc increase previously reported using CuPc. By contrast, angle-resolved p…
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The effects of adsorption of Zn-phthalocyanine (ZnPc) molecules on the superconductivity of the Si(111)-(root7xroot3)-In surface are studied through transport measurements under ultrahigh vacuum environment. The ZnPc molecules are found to increase the transition temperature Tc by 11% at maximum, which is about 2.7 times the Tc increase previously reported using CuPc. By contrast, angle-resolved photoemission spectroscopy measurements and ab initio calculations show that charge transfer from the In atomic layers to ZnPc is substantially smaller than that to CuPc. This clearly shows that charge transfer should be excluded as the origin of the increase in Tc. The push-back effect induced by physical adsorption of molecules is discussed as a possible mechanism for the Tc enhancement.
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Submitted 5 December, 2022;
originally announced December 2022.
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Atomic-layer Rashba-type superconductor protected by dynamic spin-momentum locking
Authors:
Shunsuke Yoshizawa,
Takahiro Kobayashi,
Yoshitaka Nakata,
Koichiro Yaji,
Kenta Yokota,
Fumio Komori,
Shik Shin,
Kazuyuki Sakamoto,
Takashi Uchihashi
Abstract:
Spin-momentum locking is essential to the spin-split Fermi surfaces of inversion-symmetry broken materials, which are caused by either Rashba-type or Zeeman-type spin-orbit coupling (SOC). While the effect of Zeeman-type SOC on superconductivity has experimentally been shown recently, that of Rashba-type SOC remains elusive. Here we report on convincing evidence for the critical role of the spin-m…
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Spin-momentum locking is essential to the spin-split Fermi surfaces of inversion-symmetry broken materials, which are caused by either Rashba-type or Zeeman-type spin-orbit coupling (SOC). While the effect of Zeeman-type SOC on superconductivity has experimentally been shown recently, that of Rashba-type SOC remains elusive. Here we report on convincing evidence for the critical role of the spin-momentum locking on crystalline atomic-layer superconductors on surfaces, for which the presence of the Rashba-type SOC is demonstrated. In-situ electron transport measurements reveal that in-plane upper critical magnetic field is anomalously enhanced, reaching approximately three times the Pauli limit at $T = 0$. Our quantitative analysis clarifies that dynamic spin-momentum locking, a mechanism where spin is forced to flip at every elastic electron scattering, suppresses the Cooper pair-breaking parameter by orders of magnitude and thereby protects superconductivity. The present result provides a new insight into how superconductivity can survive the detrimental effects of strong magnetic fields and exchange interactions.
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Submitted 12 March, 2021;
originally announced March 2021.
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Surface band characters of Weyl semimetal candidate material MoTe$_2$ revealed by one-step ARPES theory
Authors:
Ryota Ono,
Alberto Marmodoro,
Jakub Schusser,
Yositaka Nakata,
Eike F. Schwier,
Jürgen Braun,
Hubert Ebert,
Ján Minár,
Kazuyuki Sakamoto,
Peter Krüger
Abstract:
The layered 2D-material MoTe$_2$ in the T$_d$ crystal phase is a semimetal which has theoretically been predicted to possess topologically non-trivial bands corresponding to Weyl fermions. Clear experimental evidence by angle-resolved photoemission spectroscopy (ARPES) is, however, lacking, which calls for a careful examination of the relation between ground state band structure calculations and A…
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The layered 2D-material MoTe$_2$ in the T$_d$ crystal phase is a semimetal which has theoretically been predicted to possess topologically non-trivial bands corresponding to Weyl fermions. Clear experimental evidence by angle-resolved photoemission spectroscopy (ARPES) is, however, lacking, which calls for a careful examination of the relation between ground state band structure calculations and ARPES intensity plots. Here we report a study of the near Fermi-energy band structure of MoTe$_2$(T$_d$) by means of ARPES measurements, density functional theory, and one-step-model ARPES calculations. Good agreement between theory and experiment is obtained. We analyze the orbital character of the surface bands and its relation to the ARPES polarization dependence. We find that light polarization has a major efect on which bands can be observed by ARPES. For s-polarized light, the ARPES intensity is dominated by subsurface Mo d orbitals, while p-polarized light reveals the bands composed mainly derived from Te p orbitals. Suitable light polarization for observing either electron or hole pocket are determined
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Submitted 3 March, 2021; v1 submitted 25 October, 2020;
originally announced October 2020.
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Surface states and Rashba-type spin polarization in antiferromagnetic MnBi$_2$Te$_4$
Authors:
R. C. Vidal,
H. Bentmann,
T. R. F. Peixoto,
A. Zeugner,
S. Moser,
C. H. Min,
S. Schatz,
K. Kissner,
M. Ünzelmann,
C. I. Fornari,
H. B. Vasili,
M. Valvidares,
K. Sakamoto,
D. Mondal,
J. Fujii,
I. Vobornik,
S. Jung,
C. Cacho,
T. K. Kim,
R. J. Koch,
C. Jozwiak,
A. Bostwick,
J. D. Denlinger,
E. Rotenberg,
J. Buck
, et al. (10 additional authors not shown)
Abstract:
The layered van der Waals antiferromagnet MnBi$_2$Te$_4$ has been predicted to combine the band ordering of archetypical topological insulators such as Bi$_2$Te$_3$ with the magnetism of Mn, making this material a viable candidate for the realization of various magnetic topological states. We have systematically investigated the surface electronic structure of MnBi$_2$Te$_4$(0001) single crystals…
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The layered van der Waals antiferromagnet MnBi$_2$Te$_4$ has been predicted to combine the band ordering of archetypical topological insulators such as Bi$_2$Te$_3$ with the magnetism of Mn, making this material a viable candidate for the realization of various magnetic topological states. We have systematically investigated the surface electronic structure of MnBi$_2$Te$_4$(0001) single crystals by use of spin- and angle-resolved photoelectron spectroscopy experiments. In line with theoretical predictions, the results reveal a surface state in the bulk band gap and they provide evidence for the influence of exchange interaction and spin-orbit coupling on the surface electronic structure.
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Submitted 12 September, 2019; v1 submitted 28 March, 2019;
originally announced March 2019.
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Hot Carrier Transportation Dynamics in InAs/GaAs Quantum Dot Solar Cell
Authors:
Tomah Sogabe,
Kohdai Nii,
Katsuyoshi Sakamoto,
Koichi Yamaguchi,
Yoshitaka Okada
Abstract:
The hot carrier dynamics and its effect on the device performance of GaAs solar cell and InAs/GaAs quantum dot solar cell (QDSC) was investigated. At first, the fundamental operation feature of conventional hot carrier solar cell was simulated based on the detailed balance thermodynamic model. Then we investigated the hot carrier dynamics in the normal junction based solar cell using hydrodynamic/…
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The hot carrier dynamics and its effect on the device performance of GaAs solar cell and InAs/GaAs quantum dot solar cell (QDSC) was investigated. At first, the fundamental operation feature of conventional hot carrier solar cell was simulated based on the detailed balance thermodynamic model. Then we investigated the hot carrier dynamics in the normal junction based solar cell using hydrodynamic/energy Boltzmann transportation model (HETM) where the two temperature (carrier temperature and lattice temperature are treated separately. For the first time, we report an inherent quasi-equivalence between the detailed balance model and HETM model. The inter-link revealed here addresses the energy conservation law used in the detailed balance model from different angle and it paves a way toward an alternative approach to curtail the selective contact constraints used in the conventional hot carrier solar cell. In simulation, a specially designed InAs/GaAs quantum dot solar cell was used in the simulation. By varying the hot carrier energy relaxation time , an increase in the open circuit voltage was clearly found with the increase of . Detailed analysis was presented regarding the spatial distribution of hot carrier temperature and its interplay with electric field and three hot carrier recombination processes (Auger, SRH and radiative)
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Submitted 29 April, 2022; v1 submitted 7 February, 2017;
originally announced February 2017.
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A revisited Johnson-Mehl-Avrami-Kolmogorov model and the evolution of grain-size distributions in steel
Authors:
D. Hömberg,
F. S. Patacchini,
K. Sakamoto,
J. Zimmer
Abstract:
The classical Johnson-Mehl-Avrami-Kolmogorov approach for nucleation and growth models of diffusive phase transitions is revisited and applied to model the growth of ferrite in multiphase steels. For the prediction of mechanical properties of such steels, a deeper knowledge of the grain structure is essential. To this end, a Fokker-Planck evolution law for the volume distribution of ferrite grains…
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The classical Johnson-Mehl-Avrami-Kolmogorov approach for nucleation and growth models of diffusive phase transitions is revisited and applied to model the growth of ferrite in multiphase steels. For the prediction of mechanical properties of such steels, a deeper knowledge of the grain structure is essential. To this end, a Fokker-Planck evolution law for the volume distribution of ferrite grains is developed and shown to exhibit a log-normally distributed solution. Numerical parameter studies are given and confirm expected properties qualitatively. As a preparation for future work on parameter identification, a strategy is presented for the comparison of volume distributions with area distributions experimentally gained from polished micrograph sections.
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Submitted 28 April, 2017; v1 submitted 11 August, 2016;
originally announced August 2016.
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Transforming a Surface State of Topological Insulator by a Bi Capping Layer
Authors:
Han Woong Yeom,
Sung Hwan Kim,
Woo Jong Shin,
Kyung-Hwan Jin,
Joonbum Park,
Tae-Hwan Kim,
Jun Sung Kim,
Hirotaka Ishikawa,
Kazuyuki Sakamoto,
Seung-Hoon Jhi
Abstract:
We introduce a dinstint approach to engineer a topologically protected surface state of a topological insulator. By covering the surface of a topological insulator, Bi2Te2Se, with a Bi monolayer film, the original surface state is completely removed and three new spin helical surface states, originating from the Bi film, emerge with different dispersion and spin polarization, through a strong elec…
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We introduce a dinstint approach to engineer a topologically protected surface state of a topological insulator. By covering the surface of a topological insulator, Bi2Te2Se, with a Bi monolayer film, the original surface state is completely removed and three new spin helical surface states, originating from the Bi film, emerge with different dispersion and spin polarization, through a strong electron hybridization. These new states play the role of topological surface states keeping the bulk topological nature intact. This mechanism provides a way to create various different types of topologically protected electron channels on top of a single topological insulator, possibly with tailored properties for various applications.
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Submitted 17 November, 2014;
originally announced November 2014.
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Spin-polarized angle-resolved photoelectron spectroscopy of the so-predicted Kondo topological insulator SmB6
Authors:
Shigemasa Suga,
Kazuyuki Sakamoto,
Taichi Okuda,
Koji Miyamoto,
Kenta Kuroda,
Akira Sekiyama,
Junichi Yamaguchi,
Hidenori Fujiwara,
Akinori Irizawa,
Takahiro Ito,
Shinichi Kimura,
T. Balashov,
W. Wulfhekel,
S. Yeo,
Fumitoshi Iga,
Shin Imada
Abstract:
Undoped and slightly Eu-doped SmB6 show the opening of a gap with decreasing temperature below ~150 K. The spectral shapes near the Fermi level (EF) at 15 K have shown strong increase in intensity of a peak at a binding energy (EB) of around 12 meV with decreasing the photon energy (hn) from 17 eV down to 7 eV. Angle resolved spectra of SmB6 measured at hn = 35 eV just after the in-situ cleavage s…
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Undoped and slightly Eu-doped SmB6 show the opening of a gap with decreasing temperature below ~150 K. The spectral shapes near the Fermi level (EF) at 15 K have shown strong increase in intensity of a peak at a binding energy (EB) of around 12 meV with decreasing the photon energy (hn) from 17 eV down to 7 eV. Angle resolved spectra of SmB6 measured at hn = 35 eV just after the in-situ cleavage showed clear dispersions of several bands in the EB region from EF to 4 eV. Spin-polarized photoelectron spectra were then measured at 12 K and light incidence angle of ~50 deg. In contrast to the lack of spin polarization for the linearly polarized light excitation, clear spin polarization was observed in the case of circularly polarized light excitation. The two prominent peaks at EB~12 and ~150 meV have shown opposite signs of spin polarization which are reversed when the helicity of the light is reversed. The sign and the magnitude of spin- polarization are consistent with a theoretical prediction for the 6H5/2 and 6H7/2 states.
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Submitted 30 September, 2013;
originally announced September 2013.
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Single Dirac-cone on the Cs-covered topological insulator surface Sb2Te3(0001)
Authors:
Christoph Seibel,
Henriette Maaß,
Minoru Ohtaka,
Sebastian Fiedler,
Christian Jünger,
Chul-Hee Min,
Hendrik Bentmann,
Kazuyuki Sakamoto,
Friedrich Reinert
Abstract:
Using angle-resolved photoelectron spectroscopy we investigate the surface electronic structure of the three-dimensional topological insulator (TI) Sb2Te3(0001). Our data show the presence of a topological surface state in the bulk energy gap with the Dirac-point located above the Fermi level. The adsorption of Cs-atoms on Sb2Te3(0001) gives rise to a downward energy shift of the electronic valenc…
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Using angle-resolved photoelectron spectroscopy we investigate the surface electronic structure of the three-dimensional topological insulator (TI) Sb2Te3(0001). Our data show the presence of a topological surface state in the bulk energy gap with the Dirac-point located above the Fermi level. The adsorption of Cs-atoms on Sb2Te3(0001) gives rise to a downward energy shift of the electronic valence band states which saturates at a value of ~200 meV. For the saturation coverage the Dirac-point of the linearly dispersive surface state resides in close proximity to the Fermi level. The electronic structure of the Cs/Sb2Te3 interface therefore considerably deviates from previously studied metal-TI interfaces based on the isostructural compound Bi2Se3 which points to the importance of atomic composition in these hetero systems.
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Submitted 19 September, 2012;
originally announced September 2012.
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Electronic Structures of Fe$_{3-x}V$_x$Si Probed by Photoemission Spectroscopy
Authors:
Y. T. Cui,
A. Kimura,
K. Miyamoto,
K. Sakamoto,
T. Xie,
S. Qiao,
M. Nakatake,
K. Shimada,
M. Taniguchi,
S. -i. Fujimori,
Y. Saitoh,
K. Kobayashi,
T. Kanomata,
O. Nashima
Abstract:
The electronic structures of the Heusler type compounds Fe$_{3-x}V$_x$Si in the concentration range between x = 0 and x = 1 have been probed by photoemission spectroscopy (PES). The observed shift of Si 2p core- level and the main valence band structres indicate a chemical potential shift to higher energy with increasing x. It is also clarified that the density of state at Fermi edge is owing to…
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The electronic structures of the Heusler type compounds Fe$_{3-x}V$_x$Si in the concentration range between x = 0 and x = 1 have been probed by photoemission spectroscopy (PES). The observed shift of Si 2p core- level and the main valence band structres indicate a chemical potential shift to higher energy with increasing x. It is also clarified that the density of state at Fermi edge is owing to the collaboration of V 3d and Fe 3d derived states. Besides the decrease of the spectral intensity near Fermi edge with increasing x suggests the formation of pseudo gap at large x.
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Submitted 16 April, 2008;
originally announced April 2008.
