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Powering AI at the Edge: A Robust, Memristor-based Binarized Neural Network with Near-Memory Computing and Miniaturized Solar Cell
Authors:
Fadi Jebali,
Atreya Majumdar,
Clément Turck,
Kamel-Eddine Harabi,
Mathieu-Coumba Faye,
Eloi Muhr,
Jean-Pierre Walder,
Oleksandr Bilousov,
Amadeo Michaud,
Elisa Vianello,
Tifenn Hirtzlin,
François Andrieu,
Marc Bocquet,
Stéphane Collin,
Damien Querlioz,
Jean-Michel Portal
Abstract:
Memristor-based neural networks provide an exceptional energy-efficient platform for artificial intelligence (AI), presenting the possibility of self-powered operation when paired with energy harvesters. However, most memristor-based networks rely on analog in-memory computing, necessitating a stable and precise power supply, which is incompatible with the inherently unstable and unreliable energy…
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Memristor-based neural networks provide an exceptional energy-efficient platform for artificial intelligence (AI), presenting the possibility of self-powered operation when paired with energy harvesters. However, most memristor-based networks rely on analog in-memory computing, necessitating a stable and precise power supply, which is incompatible with the inherently unstable and unreliable energy harvesters. In this work, we fabricated a robust binarized neural network comprising 32,768 memristors, powered by a miniature wide-bandgap solar cell optimized for edge applications. Our circuit employs a resilient digital near-memory computing approach, featuring complementarily programmed memristors and logic-in-sense-amplifier. This design eliminates the need for compensation or calibration, operating effectively under diverse conditions. Under high illumination, the circuit achieves inference performance comparable to that of a lab bench power supply. In low illumination scenarios, it remains functional with slightly reduced accuracy, seamlessly transitioning to an approximate computing mode. Through image classification neural network simulations, we demonstrate that misclassified images under low illumination are primarily difficult-to-classify cases. Our approach lays the groundwork for self-powered AI and the creation of intelligent sensors for various applications in health, safety, and environment monitoring.
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Submitted 22 May, 2023;
originally announced May 2023.
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Experimental demonstration of Single-Level and Multi-Level-Cell RRAM-based In-Memory Computing with up to 16 parallel operations
Authors:
E. Esmanhotto,
T. Hirtzlin,
N. Castellani,
S. Martin,
B. Giraud,
F. Andrieu,
J. F. Nodin,
D. Querlioz,
J-M. Portal,
E. Vianello
Abstract:
Crossbar arrays of resistive memories (RRAM) hold the promise of enabling In-Memory Computing (IMC), but essential challenges due to the impact of device imperfection and device endurance have yet to be overcome. In this work, we demonstrate experimentally an RRAM-based IMC logic concept with strong resilience to RRAM variability, even after one million endurance cycles. Our work relies on a gener…
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Crossbar arrays of resistive memories (RRAM) hold the promise of enabling In-Memory Computing (IMC), but essential challenges due to the impact of device imperfection and device endurance have yet to be overcome. In this work, we demonstrate experimentally an RRAM-based IMC logic concept with strong resilience to RRAM variability, even after one million endurance cycles. Our work relies on a generalization of the concept of in-memory Scouting Logic, and we demonstrate it experimentally with up to 16 parallel devices (operands), a new milestone for RRAM in-memory logic. Moreover, we combine IMC with Multi-Level-Cell programming and demonstrate experimentally, for the first time, an IMC RRAM-based MLC 2-bit adder.
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Submitted 3 March, 2022;
originally announced March 2022.
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Hardware calibrated learning to compensate heterogeneity in analog RRAM-based Spiking Neural Networks
Authors:
Filippo Moro,
E. Esmanhotto,
T. Hirtzlin,
N. Castellani,
A. Trabelsi,
T. Dalgaty,
G. Molas,
F. Andrieu,
S. Brivio,
S. Spiga,
G. Indiveri,
M. Payvand,
E. Vianello
Abstract:
Spiking Neural Networks (SNNs) can unleash the full power of analog Resistive Random Access Memories (RRAMs) based circuits for low power signal processing. Their inherent computational sparsity naturally results in energy efficiency benefits. The main challenge implementing robust SNNs is the intrinsic variability (heterogeneity) of both analog CMOS circuits and RRAM technology. In this work, we…
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Spiking Neural Networks (SNNs) can unleash the full power of analog Resistive Random Access Memories (RRAMs) based circuits for low power signal processing. Their inherent computational sparsity naturally results in energy efficiency benefits. The main challenge implementing robust SNNs is the intrinsic variability (heterogeneity) of both analog CMOS circuits and RRAM technology. In this work, we assessed the performance and variability of RRAM-based neuromorphic circuits that were designed and fabricated using a 130\,nm technology node. Based on these results, we propose a Neuromorphic Hardware Calibrated (NHC) SNN, where the learning circuits are calibrated on the measured data. We show that by taking into account the measured heterogeneity characteristics in the off-chip learning phase, the NHC SNN self-corrects its hardware non-idealities and learns to solve benchmark tasks with high accuracy. This work demonstrates how to cope with the heterogeneity of neurons and synapses for increasing classification accuracy in temporal tasks.
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Submitted 10 February, 2022;
originally announced February 2022.
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Ultra-High-density 3D vertical RRAM with stacked JunctionLess nanowires for In-Memory-Computing applications
Authors:
M. Ezzadeen,
D. Bosch,
B. Giraud,
S. Barraud,
J. -P. Noel,
D. Lattard,
J. Lacord,
J. -M. Portal,
F. Andrieu
Abstract:
The Von-Neumann bottleneck is a clear limitation for data-intensive applications, bringing in-memory computing (IMC) solutions to the fore. Since large data sets are usually stored in nonvolatile memory (NVM), various solutions have been proposed based on emerging memories, such as OxRAM, that rely mainly on area hungry, one transistor (1T) one OxRAM (1R) bit-cell. To tackle this area issue, while…
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The Von-Neumann bottleneck is a clear limitation for data-intensive applications, bringing in-memory computing (IMC) solutions to the fore. Since large data sets are usually stored in nonvolatile memory (NVM), various solutions have been proposed based on emerging memories, such as OxRAM, that rely mainly on area hungry, one transistor (1T) one OxRAM (1R) bit-cell. To tackle this area issue, while keeping the programming control provided by 1T1R bit-cell, we propose to combine gate-all-around stacked junctionless nanowires (1JL) and OxRAM (1R) technology to create a 3-D memory pillar with ultrahigh density. Nanowire junctionless transistors have been fabricated, characterized, and simulated to define current conditions for the whole pillar. Finally, based on Simulation Program with Integrated Circuit Emphasis (SPICE) simulations, we demonstrated successfully scouting logic operations up to three-pillar layers, with one operand per layer.
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Submitted 30 November, 2020;
originally announced December 2020.
