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Synaptic metaplasticity with multi-level memristive devices
Authors:
Simone D'Agostino,
Filippo Moro,
Tifenn Hirtzlin,
Julien Arcamone,
Niccolò Castellani,
Damien Querlioz,
Melika Payvand,
Elisa Vianello
Abstract:
Deep learning has made remarkable progress in various tasks, surpassing human performance in some cases. However, one drawback of neural networks is catastrophic forgetting, where a network trained on one task forgets the solution when learning a new one. To address this issue, recent works have proposed solutions based on Binarized Neural Networks (BNNs) incorporating metaplasticity. In this work…
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Deep learning has made remarkable progress in various tasks, surpassing human performance in some cases. However, one drawback of neural networks is catastrophic forgetting, where a network trained on one task forgets the solution when learning a new one. To address this issue, recent works have proposed solutions based on Binarized Neural Networks (BNNs) incorporating metaplasticity. In this work, we extend this solution to quantized neural networks (QNNs) and present a memristor-based hardware solution for implementing metaplasticity during both inference and training. We propose a hardware architecture that integrates quantized weights in memristor devices programmed in an analog multi-level fashion with a digital processing unit for high-precision metaplastic storage. We validated our approach using a combined software framework and memristor based crossbar array for in-memory computing fabricated in 130 nm CMOS technology. Our experimental results show that a two-layer perceptron achieves 97% and 86% accuracy on consecutive training of MNIST and Fashion-MNIST, equal to software baseline. This result demonstrates immunity to catastrophic forgetting and the resilience to analog device imperfections of the proposed solution. Moreover, our architecture is compatible with the memristor limited endurance and has a 15x reduction in memory
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Submitted 21 June, 2023;
originally announced June 2023.
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Experimental demonstration of Single-Level and Multi-Level-Cell RRAM-based In-Memory Computing with up to 16 parallel operations
Authors:
E. Esmanhotto,
T. Hirtzlin,
N. Castellani,
S. Martin,
B. Giraud,
F. Andrieu,
J. F. Nodin,
D. Querlioz,
J-M. Portal,
E. Vianello
Abstract:
Crossbar arrays of resistive memories (RRAM) hold the promise of enabling In-Memory Computing (IMC), but essential challenges due to the impact of device imperfection and device endurance have yet to be overcome. In this work, we demonstrate experimentally an RRAM-based IMC logic concept with strong resilience to RRAM variability, even after one million endurance cycles. Our work relies on a gener…
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Crossbar arrays of resistive memories (RRAM) hold the promise of enabling In-Memory Computing (IMC), but essential challenges due to the impact of device imperfection and device endurance have yet to be overcome. In this work, we demonstrate experimentally an RRAM-based IMC logic concept with strong resilience to RRAM variability, even after one million endurance cycles. Our work relies on a generalization of the concept of in-memory Scouting Logic, and we demonstrate it experimentally with up to 16 parallel devices (operands), a new milestone for RRAM in-memory logic. Moreover, we combine IMC with Multi-Level-Cell programming and demonstrate experimentally, for the first time, an IMC RRAM-based MLC 2-bit adder.
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Submitted 3 March, 2022;
originally announced March 2022.
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Hardware calibrated learning to compensate heterogeneity in analog RRAM-based Spiking Neural Networks
Authors:
Filippo Moro,
E. Esmanhotto,
T. Hirtzlin,
N. Castellani,
A. Trabelsi,
T. Dalgaty,
G. Molas,
F. Andrieu,
S. Brivio,
S. Spiga,
G. Indiveri,
M. Payvand,
E. Vianello
Abstract:
Spiking Neural Networks (SNNs) can unleash the full power of analog Resistive Random Access Memories (RRAMs) based circuits for low power signal processing. Their inherent computational sparsity naturally results in energy efficiency benefits. The main challenge implementing robust SNNs is the intrinsic variability (heterogeneity) of both analog CMOS circuits and RRAM technology. In this work, we…
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Spiking Neural Networks (SNNs) can unleash the full power of analog Resistive Random Access Memories (RRAMs) based circuits for low power signal processing. Their inherent computational sparsity naturally results in energy efficiency benefits. The main challenge implementing robust SNNs is the intrinsic variability (heterogeneity) of both analog CMOS circuits and RRAM technology. In this work, we assessed the performance and variability of RRAM-based neuromorphic circuits that were designed and fabricated using a 130\,nm technology node. Based on these results, we propose a Neuromorphic Hardware Calibrated (NHC) SNN, where the learning circuits are calibrated on the measured data. We show that by taking into account the measured heterogeneity characteristics in the off-chip learning phase, the NHC SNN self-corrects its hardware non-idealities and learns to solve benchmark tasks with high accuracy. This work demonstrates how to cope with the heterogeneity of neurons and synapses for increasing classification accuracy in temporal tasks.
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Submitted 10 February, 2022;
originally announced February 2022.
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In-situ learning harnessing intrinsic resistive memory variability through Markov Chain Monte Carlo Sampling
Authors:
Thomas Dalgaty,
Niccolo Castellani,
Damien Querlioz,
Elisa Vianello
Abstract:
Resistive memory technologies promise to be a key component in unlocking the next generation of intelligent in-memory computing systems that can act and learn locally at the edge. However, current approaches to in-memory machine learning focus often on the implementation of models and algorithms which cannot be reconciled with the true, physical properties of resistive memory. Consequently, these…
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Resistive memory technologies promise to be a key component in unlocking the next generation of intelligent in-memory computing systems that can act and learn locally at the edge. However, current approaches to in-memory machine learning focus often on the implementation of models and algorithms which cannot be reconciled with the true, physical properties of resistive memory. Consequently, these properties, in particular cycle-to-cycle conductance variability, are considered as non-idealities that require mitigation. Here by contrast, we embrace these properties by selecting a more appropriate machine learning model and algorithm. We implement a Markov Chain Monte Carlo sampling algorithm within a fabricated array of 16,384 devices, configured as a Bayesian machine learning model. The algorithm is realised in-situ, by exploiting the devices as random variables from the perspective of their cycle-to-cycle conductance variability. We train experimentally the memory array to perform an illustrative supervised learning task as well as a malignant breast tissue recognition task, achieving an accuracy of 96.3%. Then, using a behavioural model of resistive memory calibrated on array level measurements, we apply the same approach to the Cartpole reinforcement learning task. In all cases our proposed approach outperformed software-based neural network models realised using an equivalent number of memory elements. This result lays a foundation for a new path in-memory machine learning, compatible with the true properties of resistive memory technologies, that can bring localised learning capabilities to intelligent edge computing systems.
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Submitted 30 January, 2020;
originally announced January 2020.
