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Powering Disturb-Free Reconfigurable Computing and Tunable Analog Electronics with Dual-Port Ferroelectric FET
Authors:
Zijian Zhao,
Shan Deng,
Swetaki Chatterjee,
Zhouhang Jiang,
Muhammad Shaffatul Islam,
Yi Xiao,
Yixin Xu,
Scott Meninger,
Mohamed Mohamed,
Rajiv Joshi,
Yogesh Singh Chauhan,
Halid Mulaosmanovic,
Stefan Duenkel,
Dominik Kleimaier,
Sven Beyer,
Hussam Amrouch,
Vijaykrishnan Narayanan,
Kai Ni
Abstract:
Single-port ferroelectric FET (FeFET) that performs write and read operations on the same electrical gate prevents its wide application in tunable analog electronics and suffers from read disturb, especially to the high-threshold voltage (VTH) state as the retention energy barrier is reduced by the applied read bias. To address both issues, we propose to adopt a read disturb-free dual-port FeFET w…
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Single-port ferroelectric FET (FeFET) that performs write and read operations on the same electrical gate prevents its wide application in tunable analog electronics and suffers from read disturb, especially to the high-threshold voltage (VTH) state as the retention energy barrier is reduced by the applied read bias. To address both issues, we propose to adopt a read disturb-free dual-port FeFET where write is performed on the gate featuring a ferroelectric layer and the read is done on a separate gate featuring a non-ferroelectric dielectric. Combining the unique structure and the separate read gate, read disturb is eliminated as the applied field is aligned with polarization in the high-VTH state and thus improving its stability, while it is screened by the channel inversion charge and exerts no negative impact on the low-VTH state stability. Comprehensive theoretical and experimental validation have been performed on fully-depleted silicon-on-insulator (FDSOI) FeFETs integrated on 22 nm platform, which intrinsically has dual ports with its buried oxide layer acting as the non-ferroelectric dielectric. Novel applications that can exploit the proposed dual-port FeFET are proposed and experimentally demonstrated for the first time, including FPGA that harnesses its read disturb-free feature and tunable analog electronics (e.g., frequency tunable ring oscillator in this work) leveraging the separated write and read paths.
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Submitted 2 May, 2023;
originally announced May 2023.
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Compact and High-Performance TCAM Based on Scaled Double-Gate FeFETs
Authors:
Liu Liu,
Shubham Kumar,
Simon Thomann,
Yogesh Singh Chauhan,
Hussam Amrouch,
Xiaobo Sharon Hu
Abstract:
Ternary content addressable memory (TCAM), widely used in network routers and high-associativity caches, is gaining popularity in machine learning and data-analytic applications. Ferroelectric FETs (FeFETs) are a promising candidate for implementing TCAM owing to their high ON/OFF ratio, non-volatility, and CMOS compatibility. However, conventional single-gate FeFETs (SG-FeFETs) suffer from relati…
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Ternary content addressable memory (TCAM), widely used in network routers and high-associativity caches, is gaining popularity in machine learning and data-analytic applications. Ferroelectric FETs (FeFETs) are a promising candidate for implementing TCAM owing to their high ON/OFF ratio, non-volatility, and CMOS compatibility. However, conventional single-gate FeFETs (SG-FeFETs) suffer from relatively high write voltage, low endurance, potential read disturbance, and face scaling challenges. Recently, a double-gate FeFET (DG-FeFET) has been proposed and outperforms SG-FeFETs in many aspects. This paper investigates TCAM design challenges specific to DG-FeFETs and introduces a novel 1.5T1Fe TCAM design based on DG-FeFETs. A 2-step search with early termination is employed to reduce the cell area and improve energy efficiency. A shared driver design is proposed to reduce the peripherals area. Detailed analysis and SPICE simulation show that the 1.5T1Fe DG-TCAM leads to superior search speed and energy efficiency. The 1.5T1Fe TCAM design can also be built with SG-FeFETs, which achieve search latency and energy improvement compared with 2FeFET TCAM.
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Submitted 13 April, 2023; v1 submitted 7 April, 2023;
originally announced April 2023.
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Power Side-Channel Attacks in Negative Capacitance Transistor (NCFET)
Authors:
Johann Knechtel,
Satwik Patnaik,
Mohammed Nabeel,
Mohammed Ashraf,
Yogesh S. Chauhan,
Jörg Henkel,
Ozgur Sinanoglu,
Hussam Amrouch
Abstract:
Side-channel attacks have empowered bypassing of cryptographic components in circuits. Power side-channel (PSC) attacks have received particular traction, owing to their non-invasiveness and proven effectiveness. Aside from prior art focused on conventional technologies, this is the first work to investigate the emerging Negative Capacitance Transistor (NCFET) technology in the context of PSC atta…
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Side-channel attacks have empowered bypassing of cryptographic components in circuits. Power side-channel (PSC) attacks have received particular traction, owing to their non-invasiveness and proven effectiveness. Aside from prior art focused on conventional technologies, this is the first work to investigate the emerging Negative Capacitance Transistor (NCFET) technology in the context of PSC attacks. We implement a CAD flow for PSC evaluation at design-time. It leverages industry-standard design tools, while also employing the widely-accepted correlation power analysis (CPA) attack. Using standard-cell libraries based on the 7nm FinFET technology for NCFET and its counterpart CMOS setup, our evaluation reveals that NCFET-based circuits are more resilient to the classical CPA attack, due to the considerable effect of negative capacitance on the switching power. We also demonstrate that the thicker the ferroelectric layer, the higher the resiliency of the NCFET-based circuit, which opens new doors for optimization and trade-offs.
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Submitted 8 July, 2020;
originally announced July 2020.
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New Julia and Mandelbrot Sets for Jungck Ishikawa Iterates
Authors:
Suman Joshi,
Dr. Yashwant Singh Chauhan,
Dr. Ashish Negi
Abstract:
The generation of fractals and study of the dynamics of polynomials is one of the emerging and interesting field of research nowadays. We introduce in this paper the dynamics of polynomials z^ n - z + c = 0 for n>=2 and applied Jungck Ishikawa Iteration to generate new Relative Superior Mandelbrot sets and Relative Superior Julia sets. In order to solve this function by Jungck type iterative schem…
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The generation of fractals and study of the dynamics of polynomials is one of the emerging and interesting field of research nowadays. We introduce in this paper the dynamics of polynomials z^ n - z + c = 0 for n>=2 and applied Jungck Ishikawa Iteration to generate new Relative Superior Mandelbrot sets and Relative Superior Julia sets. In order to solve this function by Jungck type iterative schemes, we write it in the form of Sz = Tz, where the function T, S are defined as Tz = z^ n + c and Sz = z. Only mathematical explanations are derived by applying Jungck Ishikawa Iteration for polynomials in the literature but in this paper we have generated Relative Mandelbrot sets and Relative Julia sets.
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Submitted 3 April, 2014;
originally announced April 2014.
