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  1. arXiv:2402.07090  [pdf

    cs.NI cs.ET eess.SP

    Design of a W-band High-PAE Class A&AB Power Amplifier in 150nm GaAs Technology

    Authors: Jun Yan Leea, Duo Wu, Xuanrui Guoc, Mohammad Mahdi Ariannejad, Mohammad Arif Sobhan Bhuiyan, Mahdi H. Miraz

    Abstract: Nanometer scale power amplifiers (PA) at sub-THz suffer from severe parasitic effects that lead to experience limited maximum frequency and reduced power performance at the device transceiver front end. The integrated circuits researchers proposed different PA design architecture combinations at scaled down technologies to overcome these limitations. Although the designs meet the minimum requireme… ▽ More

    Submitted 10 February, 2024; originally announced February 2024.

    Journal ref: Transactions on Electrical and Electronic Materials (TEEM), Electronic ISSN: 2092-7592, Print ISSN: 1229-7607, 10th February 2024, Available: https://link.springer.com/article/10.1007/s42341-024-00513-8