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Stochastic behaviour of an interface-based memristive device
Authors:
Sahitya Yarragolla,
Torben Hemke,
Jan Trieschmann,
Finn Zahari,
Hermann Kohlstedt,
Thomas Mussenbrock
Abstract:
A large number of simulation models have been proposed over the years to mimic the electrical behaviour of memristive devices. The models are based either on sophisticated mathematical formulations that do not account for physical and chemical processes responsible for the actual switching dynamics or on multi-physical spatially resolved approaches that include the inherent stochastic behaviour of…
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A large number of simulation models have been proposed over the years to mimic the electrical behaviour of memristive devices. The models are based either on sophisticated mathematical formulations that do not account for physical and chemical processes responsible for the actual switching dynamics or on multi-physical spatially resolved approaches that include the inherent stochastic behaviour of real-world memristive devices but are computationally very expensive. In contrast to the available models, we present a computationally inexpensive and robust spatially 1D model for simulating interface-type memristive devices. The model efficiently incorporates the stochastic behaviour observed in experiments and can be easily transferred to circuit simulation frameworks. The ion transport, responsible for the resistive switching behaviour, is modelled using the kinetic Cloud-In-a-Cell scheme. The calculated current-voltage characteristics obtained using the proposed model show excellent agreement with the experimental findings.
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Submitted 31 October, 2021;
originally announced November 2021.
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Anticipation of digital patterns
Authors:
Karlheinz Ochs,
Martin Ziegler,
Eloy Hernandez-Guevara,
Enver Solan,
Marina Ignatov,
Mirko Hansen,
Mahal Singh Gill,
Hermann Kohlstedt
Abstract:
A memristive device is a novel passive device, which is essentially a resistor with memory. This device can be utilized for novel technical applications like neuromorphic computation. In this paper, we focus on anticipation - a capability of a system to decide how to react in an environment by predicting future states. Especially, we have designed an elementary memristive circuit for the anticipat…
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A memristive device is a novel passive device, which is essentially a resistor with memory. This device can be utilized for novel technical applications like neuromorphic computation. In this paper, we focus on anticipation - a capability of a system to decide how to react in an environment by predicting future states. Especially, we have designed an elementary memristive circuit for the anticipation of digital patterns, where this circuit is based on the capability of an amoeba to anticipate periodically occurring unipolar pulses. The resulting circuit has been verified by digital simulations and has been realized in hardware as well. For the practical realization, we have used an Ag-doped TiO2-x-based memristive device, which has been fabricated in planar capacitor structures on a silicon wafer. The functionality of the circuit is shown by simulations and measurements. Finally, the anticipation of information is demonstrated by using images, where the robustness of this anticipatory circuit against noise and faulty intermediate information is visualized.
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Submitted 1 June, 2017; v1 submitted 24 April, 2017;
originally announced April 2017.
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An Enhanced Lumped Element Electrical Model of a Double Barrier Memristive Device
Authors:
Enver Solan,
Sven Dirkmann,
Mirko Hansen,
Dietmar Schroeder,
Hermann Kohlstedt,
Martin Ziegler,
Thomas Mussenbrock,
Karlheinz Ochs
Abstract:
The massive parallel approach of neuromorphic circuits leads to effective methods for solving complex problems. It has turned out that resistive switching devices with a continuous resistance range are potential candidates for such applications. These devices are memristive systems - nonlinear resistors with memory. They are fabricated in nanotechnology and hence parameter spread during fabricatio…
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The massive parallel approach of neuromorphic circuits leads to effective methods for solving complex problems. It has turned out that resistive switching devices with a continuous resistance range are potential candidates for such applications. These devices are memristive systems - nonlinear resistors with memory. They are fabricated in nanotechnology and hence parameter spread during fabrication may aggravate reproducible analyses. This issue makes simulation models of memristive devices worthwhile.
Kinetic Monte-Carlo simulations based on a distributed model of the device can be used to understand the underlying physical and chemical phenomena. However, such simulations are very time-consuming and neither convenient for investigations of whole circuits nor for real-time applications, e.g. emulation purposes. Instead, a concentrated model of the device can be used for both fast simulations and real-time applications, respectively. We introduce an enhanced electrical model of a valence change mechanism (VCM) based double barrier memristive device (DBMD) with a continuous resistance range. This device consists of an ultra-thin memristive layer sandwiched between a tunnel barrier and a Schottky-contact. The introduced model leads to very fast simulations by using usual circuit simulation tools while maintaining physically meaningful parameters.
Kinetic Monte-Carlo simulations based on a distributed model and experimental data have been utilized as references to verify the concentrated model.
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Submitted 19 January, 2017;
originally announced January 2017.
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Synchronization of two memristive coupled van der Pol oscillators
Authors:
M. Ignatov,
M. Hansen,
M. Ziegler,
H. Kohlstedt
Abstract:
The objective of this paper is to explore the possibility to couple two van der Pol (vdP) oscillators via a resistance-capacitance (RC) network comprising a Ag-TiOx-Al memristive device. The coupling was mediated by connecting the gate terminals of two programmable unijunction transistors (PUTs) through the network. In the high resistance state (HRS) the memresistance was in the order of MOhm lead…
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The objective of this paper is to explore the possibility to couple two van der Pol (vdP) oscillators via a resistance-capacitance (RC) network comprising a Ag-TiOx-Al memristive device. The coupling was mediated by connecting the gate terminals of two programmable unijunction transistors (PUTs) through the network. In the high resistance state (HRS) the memresistance was in the order of MOhm leading to two independent selfsustained oscillators characterized by the different frequencies f1 and f2 and no phase relation between the oscillations. After a few cycles and in dependency of the mediated pulse amplitude the memristive device switched to the low resistance state (LRS) and a frequency adaptation and phase locking was observed. The experimental results are underlined by theoretically considering a system of two coupled vdP equations. The presented neuromorphic circuitry conveys two essentials principle of interacting neuronal ensembles: synchronization and memory. The experiment may path the way to larger neuromorphic networks in which the coupling parameters can vary in time and strength and are realized by memristive devices.
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Submitted 15 November, 2015;
originally announced November 2015.
